Ca~(2+)掺杂对SmFeO_3的介电、铁磁特性及磁相变温度的影响

采用固相反应法制备Sm_(1-x)Ca_xFeO_3(x=0,0.1,0.2,0.3)样品,研究Ca~(2+)掺杂对SmFeO_3介电性能、铁磁性及磁相变温度的影响.X射线衍射图谱分析表明:所有样品的主衍射峰与SmFe03相符合且具有良好的晶体结构.随着x的增加,SmFeO_3样品的晶粒尺寸由原来的0.5μm逐渐增大到2μm.当f=1 kHz时,Sm_(1-x)Ca_xFeO_3(x=0.1,0.2,0.3)样品的ε_r分别是SmFe03的5倍、3倍和2.6倍,而tgσ增大一个数量级.在3T磁场作用下,SmFe03样品的M-H呈线性,随着x的增加,M-H逐渐趋向饱和,Sm_(1-x)Ca_xFeO_3(x=0.1,0.2,0.3)样品的M_r分别是SmFeO_3的20倍、31倍和68倍.X射线光电子能谱分析表明:Fe~(2+)和Fe3+共存于Sm_(1-x)Ca_xFeO_3样品中,Fe~(2+)/Fe~(3+)比例随着x的增加而增大,证明Ca~(2+)掺杂增加了Fe~(2+)的含量,形成Fe~(2+)—O~(2-)—Fe~(3+)超交换作用,增强SmFe03的铁磁特性.测量了Sm_(1-x)Ca_xFeO_3样品在外加磁场为1000 Oe(1 Oe=79.5775 A/m)的M-T变化关系,观测到其自旋重组温度(T_(SR))和尼尔温度(T_N)分别为438 K和687 K,发现SmFe03样品的T_(SR)和T_N均随着x的增加向低温方向移动,当x=0.3时,自旋重组现象消失.这主要是SmFeO_3样品磁结构的稳定性和Fe~(3+)—O~(2-)—Fe~(3+)及Sm~(3+)—O~(2-)—Fe~(3+)超交换三者共同作用的结果.     

Dy,Co共掺杂对BiFeO3陶瓷磁特性和磁相变温度Tc的影响

采用快速液相烧结法制备BiFeO₃和Bi_0.95Dy_0.05Fe_1-xCo_xO₃ (x=0, 0.05, 0.1, 0.15)陶瓷样品. 实验结果表明: 所有样品的主衍射峰与纯相BiFeO₃相符合且具有良好的晶体结构, 随着Co³⁺掺杂量的增大, Bi_0.95Dy_0.05Fe_1-xCo_xO₃样品的主 衍射峰由双峰(104)与(110)逐渐重叠为单峰(110), 当掺杂量x>0.05时, 样品呈现正方晶系结构; SEM形貌分析可知: Dy³⁺, Co³⁺共掺杂使BiFeO₃晶粒尺度由原来的3—5 μ减小到约1 μ. 室温下, BiFeO₃样品表现出较弱的铁磁性, 随着Dy³⁺和Co³⁺掺杂, BiFeO₃样品的铁磁性显著提高. 在外加磁场为30 kOe的作用下, Bi_0.95Dy_0.05Fe_1-xCo_xO₃ (x=0.05, 0.1, 0.15)的M_r分别为0.43, 0.489, 0.973 emu/g; M_S分别为0.77, 1.65, 3.08 emu/g. BiFeO₃和Bi_0.95Dy_0.05Fe_1-xCo_xO₃样品磁矩M随着温度T的升高而逐渐减小, Dy掺杂使BiFeO₃样品的T_N由644 K升高到648 K, 而T_C基本没有变化. Dy和Co共掺杂导致BiFeO₃样品磁相变温度T_C由870 K降低到780 K, 其T_C变化主要取决于Fe-O-Fe反铁磁超交换作用的强弱和磁结构的相对稳定性. 关键词： 铁磁电材料 磁滞回线 磁相变温度     

多铁材料Bi1-xCaxFeO3的介电、铁磁特性和高温磁相变

采用溶胶凝胶法制备Bi_1-xCa_xFeO₃ (x=0, 0.05, 0.1, 0.15, 0.2)陶瓷样品. X衍射图谱表明所有样品的主衍射峰均与纯相BiFeO₃相符合且具有良好的晶体结构. 随着x的增大, Bi_1-xCa_xFeO₃样品的主衍射峰由双峰(104)与(110) 逐渐重叠为单峰(110), 当x ≥0.15时, 样品呈现正方晶系结构; 扫描电镜形貌分析可知, 晶粒由原来的0.5 μm逐渐增大到2 μm. Bi_1-xCa_xFeO₃样品介电常数和介电损耗随着x 的增加先增大而后减小. 当f=1 kHz, Bi_0.9Ca_0.1FeO₃ 的介电常数达到最大值, 是BiFeO₃的7.5倍, 而Bi_0.8Ca_0.2FeO₃的介电常数达到最小值, 仅仅是BiFeO₃的十分之一. Bi_1-xCa_xFeO₃样品所呈现的介电特性是由偶极子取向极化和空间电荷限制电流两种极化机理共同作用的结果. 随着Ca²⁺ 的引入, BiFeO₃ 样品的铁磁性显著提高. X射线光电子能谱图表明Fe²⁺和Fe³⁺ 共存于Bi_1-xCa_xFeO₃ 样品中, Fe²⁺/Fe³⁺比例随着Ca²⁺ 掺杂量的增加而增大, 证明Ca²⁺掺杂增加了Fe²⁺的含量, 增强BiFeO₃的铁磁特性. 从M-T曲线观察到BiFeO₃样品在878 K附近发生铁磁相变, 示差扫描量热法测试再次证明BiFeO₃ 在878 K发生相变. Ca²⁺掺杂使BiFeO₃样品的T_N略有变化而T_M基本不变, 其主要原因是Fe-O-Fe反铁磁超交换作用的强弱和磁结构相对稳定.     

Ni2O3掺杂对新固相源顶部籽晶熔渗生长法制备单畴GdBCO超导块材超导性能的影响

本文通过在新固相源中添加Ni₂O₃的方法, 采用顶部籽晶熔渗生长工艺(TSIG)制备出组分为(1-x) (Gd₂O₃+1.2BaCuO₂)+x Ni₂O₃、直径为20 mm的单畴GdBCO 超导块材(其中x = 0, 0.02, 0.06, 0.10, 0.14, 0.18, 0.30, 0.50 wt%), 并研究了Ni₂O₃的掺杂量x对样品的表面生长形貌、微观结构、临界温度T_c、磁悬浮力以及俘获磁通密度的影响. 研究结果表明, 当Ni₂O₃的掺杂量x在0–0.50 wt%的范围内时, 均可制备出单畴性良好的样品, 且Ni₂O₃的掺杂对样品中Gd211粒子的分布和粒径没有明显的影响. 在Ni₂O₃的掺杂量x从0增加到0.50 wt%的过程中, 样品的临界温度T_c呈现下降的趋势, 从x=0时的92.5 K下降到x=0.50 wt%时的86.5 K, 这是由于Ni^{3 +}替代GdBCO晶体中Cu^{2 +}所致; 样品磁悬浮力和俘获磁通密度均呈现先增大后减小的变化规律, x=0.14 wt%时, 磁悬浮力达到最大值34.2 N, x=0.10 wt%时, 俘获磁通密度达到最大值0.354 T. 样品磁悬浮力和俘获磁通密度的变化规律与Ni₂O₃的掺杂量x有密切关系, 只有当掺杂量x合适时, Ni³⁺对Cu^{2 +}的替代既不会造成T_c的明显下降, 但又能产生适量的Ni^{3 +}/Cu²⁺ 晶格畸变, 从而达到提高样品磁通钉扎能力和超导性能的效果.     

钙钛矿锰氧化物(La_(1-x)Eu_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.15)的磁性和电性研究

通过传统固相反应法制备了钙钛矿锰氧化物(La1-xEux)4/3Sr5/3Mn2O7(x=0,0.15)多晶样品,并且对其磁性和电性进行了研究.磁性测量表明:随着温度的降低,样品经历了一个复杂的转变过程,在温度为T*时经历二维短程铁磁有序转变,在温度为TC时进入三维长程铁磁态.随着Eu的掺杂,T*和TC减小,并且样品(La0.85Eu0.15)4/3Sr5/3Mn2O7在低温区表现出自旋玻璃行为.电性质测量表明:在母体La4/3Sr5/3Mn2O7中La位掺杂Eu后电阻率明显变大,金属绝缘转变温度TMI降低,磁电阻峰值增大.这些影响归因于较小的Eu3+离子替代La3+离子导致平均离子半径减小,晶格发生畸变.此外,较小的Eu3+离子优先占据层间岩盐层的R-site,使La3+,Sr3+,Eu3+离子在(La0.85Eu0.15)4/3Sr5/3Mn2O7中的分布更加有序,所以x=0.15的样品的ρ-T曲线只有一个峰.     

钙钛矿锰氧化物(La1-xGdx)4/3Sr5/3Mn2O7 (x=0, 0.025) 磁性和输运性质研究

采用传统的高温固相烧结法制备了双层钙钛矿锰氧化物(La_1-xGd_x)_4/3Sr_5/3Mn₂ O₇ (x=0, 0.025)多晶样品. 通过X射线衍射仪研究发现样品为Sr₃Ti₂O₇型四方结构, 空间群为I4/mmm; 磁性测量表明, Gd³⁺掺杂后的样品(La_0.975Gd_0.025)_4/3Sr_5/3Mn₂O₇的三维磁有序转变温度(T_C1^3D)、磁化强度(M)均降低, 这是由于Gd³⁺的掺杂引起晶格的畸变, 从而使得晶格常数发生改变, 减弱了铁磁耦合而导致的; 通过电子自旋共振谱测量发现, 在T_C^3D<T<300 K温度范围内, 两样品在顺磁的基体上均有短程的铁磁团簇存在, 出现了相分离现象. 电性测量表明: 两样品分别在T_C1^3D (La_4/3Sr_5/3Mn₂O₇ 样品的三维磁有序转变温度, T_C0^3D)<T<300 K温度范围内均以三维变程跳跃的方式导电, 分析得出Gd³⁺的掺杂使得载流子局域长度的减小. 这表明载流子需要吸收更多的能量才能克服晶格的束缚进行跳跃, 因此(La_0.975Gd_0.025)_4/3Sr_5/3Mn₂ O₇ 样品的电阻较高.     

Characterization of nonstoichiometric nickel manganite spinels NixMn3−x□3δ/4O4+δ by temperature programmed reduction

Cation deficient spinels Ni_xMn_3−x□_3δ/4O_4+δ (0≤x≤1) have been prepared by thermal decomposition of mixed oxalates Ni_x/3Mn_(3−x)/3(C₂O₄)·nH₂O in air at 623 K. They have been characterised by temperature programmed reduction (TPR) under H₂, the reaction being followed by gravimetric and powder X-ray diffraction measurements. It has been shown that TPR proceeds in several steps. The first steps correspond to the loss of nonstoichiometric oxygen leading to the formation of a stoichiometric oxide. During the following stages the manganese cations are reduced, causing the spinel structure to be destroyed, and the formation of solid solution of NiO in a cubic MnO. Subsequently, Ni²⁺ cations undergo a reduction to metallic nickel, and, finally, a mixture of nonstoichiometric MnO_1−δ and metallic nickel is formed. These oxides contain a high level of vacancies which vary with the nickel content with a maximum of δ≈1 near x=0.6. This nonstoichiometry is ascribed both to the presence of Ni³⁺ and excess of Mn⁴⁺.     

B-MQMAS and Si–{B} Double-Resonance NMR Studies on the Structure of Binary B2O3–SiO2 Glasses

Glasses in the system x B₂O₃·(1−x)SiO₂ (0.2≤x≤1.0) were studied using ¹¹B multiple quantum magic angle spinning NMR spectroscopy (MQMAS), ²⁹Si–\{¹¹B\} rotational echo adiabatic passage double-resonance and ²⁹Si–\}¹¹B\{ CP heteronuclear correlation spectroscopy. The results can be quantitatively interpreted in terms of a phase separation of the borosilicate glasses into a virtually SiO₂-free B₂O₃ phase and a mixed borosilicate phase. While the MQMAS spectra allowed the site speciation and resolution of at least two different ¹¹B resonances, attributable to BO_3/2 units consumed in boroxol rings, BO_3/2 units connecting the boroxol rings and BO_3/2 units involved in B–O–Si linkages, the analysis of the double-resonance data further elucidated the structure of the mixed borosilicate phase. The results indicate that only a fraction of 0.48 mol B₂O₃ can be accommodated per mole SiO₂, building a mixed borosilicate network.     

Tuning the multiferroic properties of Pb(Fe1/2Nb1/2)O3 by cationic substitution

A series of substituted lead iron niobate compounds with the general formula Pb²⁺_(1−x)A^Z_x(Fe_{{(1−(2−Z)x)/2}}Nb_{{(1+(2−Z)x)/2}})O₃ (0<x<0.6 and A=La³⁺, K⁺ or Sr²⁺) were prepared by a modified solid-state synthesis. The relative concentrations of Fe³⁺ and Nb⁵⁺ were adjusted to compensate the charge imbalance due to the aliovalent substitution. The dielectric constant and magnetic susceptibilities were studied as a function of temperature. The temperature of the dielectric maximum, T_M, of the substituted compounds decreased linearly with increasing concentration of the substituent ions. The magnetic measurements showed an antiferromagnetic transition at temperatures T_N1 due to the superexchange interactions mediated by Fe–O–Fe and an additional antiferromagnetic-type transition at T_N2. T_N1 linearly increased with the increasing concentration of Fe³⁺ ion at the B-site of ABO₃-type substituted compounds. T_M is shown to be directly dependent on the concentration of the ferroactive Nb⁵⁺ ions at the B-site and Pb²⁺ ions at the A-site.     

光学碱度对Tb3+掺杂Bi2O3-B2O3玻璃发光性能的影响

采用熔融法制备了Tb³⁺掺杂的Bi₂O₃-B₂O₃系统玻璃,使用激发、发射及拉曼光谱分析了光学碱度与玻璃结构及发光性能的关系,同时绘制了Tb³⁺、Bi³⁺和Bi²⁺的能级图。研究结果表明：Tb³⁺掺杂的Bi₂O₃-B₂O₃玻璃由[BO₃]、[BiO₃]、[BO₄]及[BiO₆]共同组成,且随着光学碱度由0.63增加到0.93,玻璃的结构逐渐疏松。高的光学碱度使部分Bi³⁺变为Bi²⁺,发出571 nm（²P_3/2（2）→²P_1/2）的光,Bi³⁺→Tb³⁺的能量降低。在光学碱度及Tb³⁺、Bi³⁺和Bi²⁺离子的共同作用下,随着光学碱度的提高,玻璃的发光颜色由黄绿色变为白色。     

Investigations on conductivity anomalies in Li2O·4MnO1+x·4B2O3 glasses

Glassy material Li₂O·4MnO_1+x·4B₂O₃ (0<x<0.5) has been prepared by quenching the melt in air, and its electrical conduction behavior has been studied. Two conductivity anomalies are observed around the glass transition temperature. One appears in the dependence of the isothermal conductivity vs. the annealing time. This anomaly is attributed to the oxidation of Mn²⁺ by oxygen ions penetrating into the glass matrix, leading to the increase of the charge carrier density. The other anomaly is observed in the dependence of the conductivity vs. the temperature for different times of annealing. The abnormal increase and decrease of the conductivity vs. annealing time might result from a complicated structural variation in the glass. Below 200°C, the conductivity obeys an Arrhenius relation. Above 350°C, the formation of crystalline MnBO₃ causes a conductivity decrease by one order of magnitude. The conductivity is enhanced by the redistribution of free volume between these two temperatures.     

Preparation, characterization and oxide ion conductivity in U-substituted Bi4V2O11

A Bi₂V_{1 − x − y}U_xBi_yO_{5.5 + 0.5x − y} solid solution derived from Bi₄V₂O₁₁ has been prepared and characterized with x up to 0.125 for y = 0. Partial substitution of U⁶⁺ for V⁵⁺ in Bi₄V₂O₁₁ leads to the stabilization at room temperature of the high-oxide ion conducting γ-phase, in contrast with other M⁶⁺ dopants which stabilize the β-phase. The lower conductivity in U substituted system compared with BICUVOX.10 is attributed to its higher activation energy. Conductivity values and activation energies of the U substituted phases compare well with Bi₂UO₆.     

Origin of the metal-insulator transition in the superconducting series Bi2Sr2Ca1−xYxCu2O8+δ

The metal-insulator transition in the solid solution Bi₂Sr₂Ca_1−xY_xCu₂O_8+δ (0≤x≤1) has been investigated by TGA (oxygen content) and by X-ray absorption spectroscopy (Bi and Cu valence states). Resistivity and AC magnetic susceptibility measurements have shown that the superconducting properties and the metallic behavior vanish for x>0.55. The oxygen content δ is larger than x/2 for x≤0.3 and smaller than x/2 for x≥0.6. For x=0, the Cu K edge shows a shift towards high energy with respect to the Cu(II) oxide La₂CuO₄; this shift decreases with increasing x in agreement with the decrease of the doping hole density and the variations of the physical properties. For 0≤x≤0.3, the Bi L₃ edge shows a shift of 1 eV towards low energy with respect to the Bi(III) oxide Bi₂O₃ in agreement with the charge transfer between [CuO₂]_∞ and [BiO]_∞ planes. This shift also decreases with increasing x, but is still present for the x=0.6 composition for which δ is smaller than x/2. A model of the metal-insulator transition in this series is proposed based on the fact that the intercalation of excess oxygen raises the bottom of the Bi-O band with respect to the Fermi level and decreases the contribution of the Bi-O electron pocket to the hole density.     

Ionic conduction properties of layer-type oxides NaxMx/2Ti1−x/2O2 (M=Ni, Co; 0.60≤x≤1.0)

Layer-type oxide Na_xM_x/2^IITi_1−x/2^IVO₂ (M=Co, Ni; 0.60≤x≤1.0) has been prepared by solid state reactions. In both series, two structural variants of type -NaFeO₂ (O3) and β-RbScO₂ (P2) have been obtained consecutively as x decreases with a borderline composition around x_c0.7. With the decrease of x, the ionic conductivity has been found to increase up to 8.4×10⁻² S cm⁻¹ at 770 K (Na_0.67Co_0.33Ti_0.67O₂). Compositions of P2 have been found to exhibit the conductivity values two to five times greater than those of O3, primarily due to the larger rectangular threshold available for the diffusion of Na⁺ ions. Such a structural effect has also been considered to depend on the polarizability of alkali ion. HT-XRD and ²³Na-NMR data of Na_0.67Co_0.33Ti_0.67O₂ strongly suggest that the diffusion of Na⁺ ion is deeply related with the local distortion of trigonal prismatic sites, leading to the change of activation energy around 430 K.     

Effective Ru moment in RuSr2Eu2−xCexCu2O10 from high-temperature magnetic susceptibility

We have made high-temperature (250 K<T<800 K) DC susceptibility measurements in the compounds RuSr₂Eu_2−xCe_xCu₂O₁₀ for x=0.6,0.8, and 1.0 in order to determine the Ru effective magnetic moment. After carefully subtracting all contributions to the magnetic susceptibility except that of the Ru ions, we have been able to fit the Ru susceptibility with a law χ_Ru=χ₀+C_Ru/(T−Θ_Ru). We have found that the Ru effective moment falls between the values expected for Ru⁵⁺ in spin states and . We have also found a dependence of μ_eff(Ru) and Θ_Ru with the Ce content x.     

Trapping mechanism of superconductivity suppression induced by Pr substitution in the Ho1−xPrxBa2Cu3O7−δ system

Pr concentration dependence of the superconducting transition temperature T_c in the Ho_1−xPr_xBa₂Cu₃O_7−δ system is determined from measurements of DC electrical resistance. This dependence coincides with that for the parallely studied Y_1−xPr_xBa₂Cu₃O_7−δ reference system. Both systems have the same value of the critical concentration x_c=0.58, in accordance with nearly equal ionic radii of Ho³⁺ and Y³⁺ ions. It has been shown that the T_c(x) curve can be described with a single mechanism based on a decreasing number of sheet holes trapped by Pr^IV-ions, if one takes also into account that the number of these ions changes with x.     

Determination of different oxygen transport mechanisms and measurement of the oxygen ion conductivity of Y1Ba2Cu3O7−x

By undertaking AC electrochemical impedance experiments on yttria stabilised zirconia electrolytes with polished Y₁Ba₂Cu₃O_7−x electrodes, the activation energy for oxygen ion transport within the bulk of Y₁Ba₂Cu₃O_7−x, in air, over the temperature range 823 K–1043 K, was determined to be 1.50 ± 0.05 eV. At 1000 K the oxygen ionic conductivity was calculated to be around one order of magnitude lower than that in yttria stabilised zirconia. Typical calculated values were σ=5×10⁻⁵ (ω cm)⁻¹ and 6×10⁻³ (ω cm)⁻¹ at the respective temperatures 823 K and 1043 K. By employing a similar cell but with Y₁Ba₂Cu₃O_7−x paste electrodes, oxygen transfer between the Y₁Ba₂Cu₃O_7−x and the electrolyte was found to occur via a surface diffusional processes. Over the temperature range 873 K–1098 K, in air, the activation energy for in-diffusion at the surface was found to be 1.4±0.1 eV and that for out-diffusion at the surface to be 1.76±0.05 eV.     

The influence of different fabrication processes on characteristics of excess Bi2O3-doped 0.95 (Na0.5Bi0.5)TiO3–0.05 BaTiO3 ceramics

In this study, we will develop the influences of the excess x wt% (x=0, 1, 2, and 3) Bi₂O₃-doped and the different fabricating process on the sintering and dielectric characteristics of 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃ ferroelectric ceramics with the aid of SEM and X-ray diffraction patterns, and dielectric–temperature curves. The 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ ceramics are fabricated by two different processes. The first process is that (Na_0.5Bi_0.5)TiO₃ composition is calcined at 850 °C and BaTiO₃ composition is calcined at 1100 °C, then the calcined (Na_0.5Bi_0.5)TiO₃ and BaTiO₃ powders are mixed in according to 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ compositions. The second process is that the raw materials are mixed in accordance to the 0.95 (Na_0.5Bi_0.5)TiO₃–0.05 BaTiO₃+x wt% Bi₂O₃ compositions and then calcining at 900 °C. The sintering process is carried out in air for 2 h from 1120 to 1240 °C. After sintering, the effects of process parameters on the dielectric characteristics will be developed by the dielectric–temperature curves. Dielectric–temperature properties are also investigated at the temperatures of 30–350 °C and at the frequencies of 10 kHz–1 MHz.     

Synthesis of YBa2Cu3O7−x superconducting thin films on LaAlO3 by means of PAMOCVD

High-T_c superconducting thin films have been deposited in situ by means of a plasma assisted metal-organic chemical vapour deposition (PAMOCVD) process on LaAlO₃. An EMCORE high-speed rotating disc reactor was used to deposit the films at a substrate temperature of 600°C to 800°C. The system is equipped with a (remote) 120 W microwave plasma generator. The oxidising plasma gas is N₂O and/or O₂ while Ar was used as the inert carrier gas for the different metal-organics. The influence of different process parameters (such as the temperatures of the metal-organics, substrate temperature, and plasma gas composition) on the superconductive properties and on the morphology of the films was investigated. Surface morphology and composition were studied by SEM/EDX or EPMA, and AC susceptibility measurements were used to investigate the superconductive properties (T_c and J_c). X-ray diffraction measurements indicated that single-phase YBa₂Cu₃O_7−x films were epitaxially grown with the 00l orientation perpendicular to the substrate surface. The critical temperature (T_c) of the films is about 90 K and the critical current density (J_c) is higher than 10⁶ A/cm² at 77 K and zero field.     

Ce3+掺杂SiO2-Al2O3-Gd2O3玻璃的闪烁性能

通常, Ce离子掺杂的低密度玻璃有较高的发光效率, 而高密度的Ce离子掺杂玻璃其发光效率很低. 为了解释这一现象, 采用高温熔融法获得了SiO₂-Al₂O₃-Gd₂O₃三元系统的玻璃形成区, 并在还原气氛下制备了Ce³⁺掺杂SiO₂-Al₂O₃-Gd₂O₃以及SiO₂-Al₂O₃-Gd₂O₃-Ln₂O₃ (Ln=Y, La, Lu)闪烁玻璃, 研究了其光谱和闪烁性能. 测试结果显示: 随着Gd₂O₃含量增加, 玻璃紫外截止波长发生红移, 荧光强度降低, 衰减时间缩短; 加入Lu₂O₃, La₂O₃, Y₂O₃后, 紫外截止波长发生红移, 荧光强度降低, 衰减时间变短; 当Gd₂O₃超过10% mol时, X射线荧光积分光产额从相当于锗酸铋 晶体的61%降低到13%. 荧光强度降低、衰减时间缩短的原因是随着玻璃的紫外截止波长红移玻璃的能带宽度变窄, 使得Ce³⁺离子的d电子轨道开始接近玻璃的导带, Ce³⁺离子受辐射后跃迁到d电子轨道的电子会通过导带与玻璃中的空穴复合, 产生电荷迁移猝灭效应.