A spectroscopic ellipsometer using rotating polarizer and analyzer at a speed ratio 1:1 and a compensator

Ellipsometers have been widely used in thin film characterization. They have shown a high degree of accuracy. We here propose theoretically a rotating polarizer and analyzer ellipsometer at a speed ratio 1:1 with a fixed compensator placed just after the rotating polarizer. Our calculations of the optical properties of c-Si and SiO \(_{2}\) reveal a substantial decrease in the percent error due to the fixed compensator. The uncertainties in the ellipsometric parameters as functions of the uncertainties of the Fourier coefficients are presented in details.     

Analysis of a static scheme of ellipsometric measurements

The specific features of the operation of a static photometric scheme of an ellipsometer are considered. Different configurations (combinations of the azimuths of optical elements) are analyzed; formulas for the calculation of the ellipsometric parameters are obtained; and, for each configuration under consideration, ranges of the unambiguous determination of these parameters are ascertained. The effect of different imperfections on the measurement accuracy of the parameters Ψ and Δ is analyzed and the possibility of a correct consideration of these imperfections is demonstrated. Methods for determining the parameters of the phase-shifting elements of the optical path are proposed. The measurement errors of the ellipsometric parameters due to inaccurate specification of the phase shifts of the compensator and the turning prism, as well as the adjustment errors of the optical elements, are determined.     

Phase-based method in heterodyne-modulated ellipsometer

A new common-path heterodyne-modulated ellipsometer with two-phase detection to measure the ellipsometric parameters of amplitude ratio (Ψ) and phase difference (Δ) between p- and s-polarizations of the thin film isotropic materials is proposed. Uniquely, the new scheme distinct from the other previous studies is only by taking two phases from heterodyne signals. Thus, the proposed system is a phase-sensitive modulated ellipsometer that can have the ability to measure the full range of the ellipsometric parameters with high sensitivity and eliminate the intensity fluctuation in system. The ability and performance of modulated ellipsometer on measurement of thin film thickness and ellipsometric parameters are verified by experiments. The errors regarding the ellipsometric parameter measurements are also discussed. The experimental results show that the average standard variation of measured ellipsometric parameters (Ψ and Δ) and the thickness measurement of silica thin film deposited on silicon substrate are 0.13°, 0.94°, and 0.55 nm, respectively. Accordingly, this new idea can be applied to measure isotropic thin film with extremely high absorbance that results in the poor signal/noise ratio in contrast extraction from heterodyne signals.     

旋转波片偏振仪波片方位误差研究

旋转波片Stokes偏振仪是最常用的测量光束偏振态的仪器。波片快轴方位误差是影响旋转波片Stokes偏振仪的主要误差源之一。为了研究波片方位偏差对测量精度的影响,提出了一种描述波片快轴方位误差向最终的偏振测量误差传递的数学模型,并引入协方差矩阵法表征偏振测量误差。根据这一模型,获得最优的偏振仪配置参数。在推导过程中,假设波片方位误差服从同一高斯分布。基于此误差模型,得到如下结论：(1)由波片方位误差引入的测量误差与光强测量次数N成反比;(2)测量误差独立于入射光强度,但是依赖于入射光偏振态(s₁, s₂, s₃)和波片的位相延迟量δ;(3)波片位相延迟量在(103.22°, 116.13°)范围内时波片方位误差引入的测量误差最小。最后,经过仿真实验证明,所得解析结果与仿真模拟结果相一致。     

Combined Mueller and Jones matrix method for the evaluation of the complex modulation in a liquid-crystal-on-silicon display

We apply the polar decomposition of the Mueller matrix describing a liquid-crystal-on-silicon display to identify the diattenuator, depolarizer, and retarder contributions as a function of the gray level. The retarder contribution is expressed in terms of the equivalent Jones matrix to apply previous techniques to evaluate the phase modulation. This allows searching for optimized polarization configurations for phase- or amplitude-only modulation responses. We present results for lambda=633 nm showing a phase-only modulation up to 2 pi rad and flat intensity modulation.     

Two-neutron transfer reactions as a tool to study the interplay between shape coexistence and quantum phase transitions

The atomic mass table presents zones where the structure of the states changes rapidly as a function of the neutron or proton number. Among them, notable examples are the A ≈ 100 Zr region, the Pb region around the neutron midshell (N = 104), and the N ≈ 90 rare-earth region. The observed phenomena can be understood in terms of either shape coexistence or quantum phase transitions. The objective of this study is to find an observable that can distinguish between both shape coexistence and quantum phase transitions. As an observable to be analyzed, we selected the two-neutron transfer intensity between the 0⁺ states in the parent and daughter nuclei. The framework used for this study is the Interacting Boson Model (IBM), including its version with configuration mixing (IBM-CM). To generate wave functions of isotope chains of interest needed for calculating transfer intensities, previous systematic studies using IBM and IBM-CM were used without changing the parameters. The results of two-neutron transfer intensities are presented for Zr, Hg, and Pt isotopic chains using IBM-CM. Moreover, for Zr, Pt, and Sm isotopic chains, the results are presented using IBM with only a single configuration, i.e., without using configuration mixing. For Zr, the two-neutron transfer intensities between the ground states provide a clear observable, indicating that normal and intruder configurations coexist in the low-lying spectrum and cross at A = 98 → 100. This can help clarify whether shape coexistence induces a given quantum phase transition. For Pt, in which shape coexistence is present and the regular and intruder configurations cross for the ground state, there is almost no impact on the value of the two-neutron transfer intensity. Similar is the situation with Hg, where the ground state always has a regular nature. For the Sm isotope chain, which is one of the quantum phase transition paradigms, the value of the two-neutron transfer intensity is affected strongly.     

Polarization modulation imaging ellipsometry for thin film thickness measurement

A polarization modulation (PM) imaging ellipsometer is proposed and setup in order to measure precisely the thickness of thin film. Five images are collected sequentially by CCD camera with respect to five pre-determined azimuth angles of a quarter wave plate (QWP) during measurement. Then two-dimensional (2-D) distributions of the ellipsometric parameters ψ and Δ over the full dynamic range are obtained. Conceptually, PM imaging ellipsometer integrates the features of phase shift interferometry with conventional photometric ellipsometry by rotating the QWP sequentially to produce polarization modulation that is able to measure the thickness of a thin film in two dimensions precisely and quickly. The basic principle of PM imaging ellipsometer is derived wherein features such as common path configuration, full dynamic range of measurement, and insensitive to non-uniform response of the CCD are analyzed. The experimental results verify the ability and performance of PM imaging ellipsometer on 2-D thin film thickness, while the errors regarding the ellipsometric parameters measurements are discussed.     

A modulated ellipsometer for studying thin film optical properties and surface dynamics

A modulated ellipsometer has been constructed for the study of the optical properties of thin films deposited and maintained in a variety of controlled environments. The ellipsometric technique involves a photoelastic device which modulates the state of polarization of the light beam. Quantities related to the ellipsometric parameters ψ and Δ are extracted simultaneously by synchronous detection of reflected light intensities in two different frequency channels. Signal processing is completed by an on-line computer which samples data at a repetition rate of approximately one data set per second. Once the optical system is aligned, all elements remain rigidly in place; hence, the precision and stability are high. In terms of ψ and Δ, the precision is of the order of 0.001° and stability over one hour is of the order of 0.01°. Various systematic uncertainties limit the absolute accuracy of the measured optical constants to a few percent for high reflectivity materials. Because of its speed, precision, and stability, this ellipsometer is suited both to comparison measurements of samples prepared under different conditions and to time-lapse measurements of a single film in order to observe annealing, gas adsorption, or surface corrosion in process. Preliminary experimental results are presented.     

Prismless excitation of surface plasmons in the infrared spectral region by ATR

A configuration for the excitation of surface plasmons in the infrared spectral region using ATR but without a coupling prism is presented. The technique is to place between the metal and the air a material which has a lower index of refraction than air so that the standard total internal reflection geometry is recovered. Experiments are performed using an aluminium layer as surface plasmon active material covered by a thin layer of quartz to realize the coupling in the reststrahlen region. The spectra are taken with the help of an ellipsometric Fourier-transform spectrometer. The behavior of the ellipsometric parameters and the degree of polarization around the surface plasmon resonance is discussed.     

Interferometric measurement of the degree of polarization and control of the contrast of intensity fluctuations

We introduce a technique for determining the polarimetric characteristics of light by measuring the contrast of the intensity fluctuations in an interferometric setup. The method permits simultaneous measurement of the degree of polarization and of the second normalized Stokes component, which is related to the ellipsometric parameters azimuth and ellipticity, based on only two measurements. We also show that by using. phase modulation we can increase the signal-to-noise ratio as much as 40% under certain conditions.     

Ellipsometry of precision optical surfaces and mirror coatings

The possibility of testing a surface damaged layer and the cleaning quality of precision optical surfaces using the monochromatic ellipsometry method is discussed. The results of ellipsometric measurements of the thickness homogeneity of nanofilms deposited by the ion-beam sputtering method are analyzed. The results of calculations of the film thicknesses and parameters of surface layers performed by solving an inverse ellipsometric problem are presented. The results of measurements of the thickness of thin films by the profilometric and ellipsometric methods are compared.     

基于Mueller矩阵椭偏仪的纳米压印模板与光刻胶光栅结构准确测量

在纳米压印工艺中,对模板和压印结构的几何参数进行快速、低成本、非破坏性地准确测量具有非常重要的意义.与传统光谱椭偏仪只能改变波长和入射角2个测量条件并且在每一组测量条件下只能获得振幅比和相位差2个测量参数相比,Mueller矩阵椭偏仪可以改变波长、入射角和方位角3个测量条件,而且在每一组测量条件下都可以获得一个4×4阶Mueller矩阵共16个参数,因此可以获得更为丰富的测量信息.通过选择合适的测量条件配置,充分利用Mueller矩阵中的测量信息,有望实现更为准确的纳米结构测量.基于此,本文利用自主研制的Mueller矩阵椭偏仪对硅基光栅模板和纳米压印光刻胶光栅结构进行了测量.实验结果表明,通过对Mueller矩阵椭偏仪进行测量条件优化配置,并且在光学特性建模时考虑测量过程中出现的退偏效应,可以实现压印工艺中纳米结构线宽、线高、侧壁角以及残胶厚度等几何参数更为准确的测量,同时对于纳米压印光刻胶光栅结构还可以直接得到光斑照射区域内残胶厚度的不均匀性参数.     

手征夸克模型下udss四夸克态的研究

在手征SU(3)夸克模型和扩展的手征SU(3)夸克模型的框架下, 用变分的方法系统地研究了同位旋为0、1, 自旋宇称为0⁺、1⁺和2⁺的udss四夸克系统6个低组态的能量. 模型的参数取自以前的工作, 它能很好地描述核子-核子散射相移以及核子-超子散射截面. S道相互作用的参数由拟合K介子和K^*介子的质量定出, 并且考虑了具有相同量子数的态之间的态混合效应. 结果表明, 同位旋为0且自旋宇称为1⁺的udss能量低于相应的K^*K^*,的阈能, 且该组态中KK^*的成分相当小, 因此该组态的宽度可能较小, 可视为一个可能的四夸克态的候选者.     

全偏振光通过延迟器件后的布卡尔球表示

以全偏振光的矢量描述和布卡尔球表示为理论基础 ,用斯托克斯矢量表示全偏振光 ,用Muller矩阵表示延迟器件 ,推导了全偏振光通过一个快轴与X/Y轴重合而相位差为δ1 的延迟器后的斯托克斯矢量表示 ,并由此计算了全偏振光通过该器件后的球坐标。由全偏振光通过延迟器件前后的球坐标表示的特点 ,可得到一束全偏振光通过此延迟器件后在布卡尔球上的位置 ,并可证明完全是由初相位差 δ0 和延迟器的相位差 δ1 决定的。给出了实例 ,并验证了此结论。     

Modeling and simulation of polarization errors in Sagnac fiber optic current sensor

Sagnac fiber optic current sensor (S-FOCS) is a kind of optical interferometer based on Sagnac structure, optical polarization states of sensing light wave in Sagnac fiber optic current sensor are limited. However, several factors induce optical polarization error, and non-ideal polarized light waves cause the interference signal crosstalk in sensor, including polarizer, quarter-wave retarder, splice angular, birefringence and so on. With these errors, linearly polarized light wave in PM fiber and circularly polarized light wave in sensing fiber become elliptically polarized light wave, then, nonreciprocal phase shift induced by magnetic field of the current is interrupted by wrong polarization state. To clarify characteristics of optical polarization error in fiber optic current sensor, we analyze the evolution process of random optical polarization state, linear optical polarization state and circular optical polarization state in Sagnac fiber optic current sensor by using Poincare sphere, then, build optical polarization error models by using Jones matrix. Based on models of polarization state in Sagnac fiber optic current sensor, we investigate the influence of several main error factors on optical polarization error characteristics theoretically, including extinction ratio in polarizer, phase delay in quarter-wave retarder, splice angular between quarter-wave retarder and polarization maintaining fiber. Finally, we simulate and quantify nonreciprocal phase shift to be detected in fiber optic current sensor related with optical polarization errors. In the end, we demonstrate S-FOCS in test. The results show that transfer matrix errors are induced by inaccurate polarization properties during polarization state conversion, then, the stability and accuracy of the S-FOCS are affected, and it is important to control the polarization properties at each step of the polarization state conversion precisely.     

辅助永磁体磁化方式对单畴GdBCO超导块材捕获磁场分布及其磁悬浮力的影响

通过对方形永磁体和方形辅助永磁体在液氮温度下对GdBCO超导体磁化后超导磁悬浮力的测量, 研究了两种组态中方形辅助永磁体对超导体的磁化方式对单畴GdBCO超导块材磁场分布及其磁悬浮力的影响. 结果发现, 方形辅助永磁体的下表面和超导体上表面保持在同一个水平面上, 磁化进程中方形辅助永磁体在GdBCO超导体上表面水平面内沿直径方向的位置x从–15 mm增加到+15 mm时, 超导磁悬浮力大小与超导体的磁化方式有着密切关系(以Z=0.1 mm为例): 1) 当方形辅助永磁体N极垂直向上且场冷后去掉辅助永磁体时, 超导体最大磁悬浮力先从16.7 N增大到23.1 N, 再减小到16.6 N; 2) 当方形辅助永磁体N极垂直向下且场冷后去掉辅助永磁体时, 超导体最大磁悬浮力先从17.7 N减小到7 N, 再增加到17.6 N; 3) 两种组态中最大磁悬浮力不相等, 而且与零场冷下的最大磁悬浮力(17.1 N)也不同. 这些结果说明: 只有通过科学合理地设计超导体和永磁体的组合方式, 才能获得较高的磁场强度, 有效地提高超导体的磁悬浮力特性, 该结果对促进超导体的应用具有重要的指导意义. 关键词： 单畴GdBCO 永磁体 捕获磁场 磁悬浮力     

一种基于相空间结构的受干扰语音品质评估方法

研究了一种基于输出的受干扰语音品质评价方法。利用相空间重构理论,建立了语音信号的相空间结构,在系统分析不同受扰语音相空间结构变化的基础上,提取了特征参数,并用大量的实测数据对这种测度方法进行了验证,结果表明,这种基于相图的受干扰语音品质评价方法是可行的。     

Atmospheric and wind tunnel air-flow-birefringence measurements

Atmospheric and air-flow birefringence is experimentally proved under laminar or turbulent air-flow conditions. The measurements involve an automatic spinning analyser ellipsometer and a simultaneous recording of the gradient wind speed. The relation between the variance of the wind gradient and the variance of the ellipsometric parameters of the emitted light are used to give an order of magnitude of the ratio of the birefringence Δ_n to the wind gradient G.     

高温退火处理下SiNx薄膜组成及键合结构变化

采用等离子增强化学气相沉积法, 以氨气和硅烷为反应气体, p型单晶硅为衬底, 低温下(200 ℃)制备了非化学计量比氮化硅(SiN_x)薄膜. 在N₂氛围中, 于500–1100 ℃范围内对薄膜进行热退火处理. 室温下分别使用Fourier变换红外吸收(FTIR)光谱技术和X射线光电子能谱(XPS)技术测量未退火以及退火处理后SiN_x薄膜的Si–N, Si–H, N–H键键合结构和Si 2p, N 1s电子结合能以及薄膜内N和Si原子含量比值R的变化. 详细讨论了不同温度退火处理下SiN_x薄膜的FTIR和XPS光谱演化同薄膜内Si, N, H原子间键合方式变化之间的关系. 通过分析FTIR和XPS光谱发现退火温度低于800 ℃时, SiN_x薄膜内Si–H和N–H键断裂后主要形成Si–N键; 当退火温度高于800 ℃时薄膜内Si–H和N–H键断裂利于N元素逸出和Si纳米粒子的形成; 当退火温度达到1100 ℃时N₂与SiN_x薄膜产生化学反应导致薄膜内N和Si原子含量比值R增加. 这些结果有助于控制高温下SiN_x薄膜可能产生的化学反应和优化SiN_x薄膜内的Si纳米粒子制备参数. 关键词： x薄膜')" href="#">SiN_x薄膜 Fourier变换红外吸收光谱 X射线光电子能谱 键合结构     

Topometry for locally changing materials

Three-dimensional topometry is supplemented with ellipsometric measurements on the same pixel raster for calculation of the phase of the reflected waves and correction of the height fields. Lateral resolution is <1mum . The ellipsometric angles are determined by phase shifting and contrast evaluation. Three-dimensional fields of the ellipsometric angles, the real and the imaginary parts of the refractive index, and the corrected topography of the heights are presented.