Magnetic and electrical properties of new magnetic phase in Si1−xMnx crystals

We have investigated the magnetic and electrical transport properties of Si_1−xMn_x single crystals grown by the vertical Bridgman method. The alloys with Mn concentrations up to x=0.64 have weak ferromagnetic ordering around T_C∼30 K. However, Si_0.25Mn_0.75 alloys show weak ferromagnetic ordering at 70 K and antiferromagnetic ordering at 104 K, which is confirmed by magnetization and electrical transport studies.     

Structural and magnetic properties of ferromagnetic In1−xMnxAs1−yPy layers

The structural and magnetic properties of epitaxial In_1−xMn_xAs_1−yP_y quaternary layers with Mn content ranging from 0.01 to 0.04 and phosphorous content ranging from 0.11 to 0.21 were studied. X-ray diffraction indicated that the films were two phase consisting of an InMnAsP solid solution and hexagonal MnAs nanoprecipitates. Addition of phosphorus promoted precipitate formation. Films were ferromagnetic showing hysteretic behavior in the field dependence of magnetization at 5 and 298 K. From field-cooled magnetization measurements ferromagnetic transitions were observed at 280 and 325 K. The zero field-cooled magnetization versus temperature measurements showed irreversibility for T<300 K that was attributed to the presence of MnAs nanoprecipitates. The calculated coercivity using the Neel model was 1380 G compared to the experimental value of 380 G at 5 K. The difference was attributed to a strong inter-cluster exchange that stabilizes the ferromagnetic state.     

Enhancement of initial permeability due to Mn substitution in polycrystalline Ni0.50−xMnxZn0.50Fe2O4

The structural and magnetic properties of Mn substituted Ni_0.50−xMn_xZn_0.50Fe₂O₄ (where x=0.00, 0.10 and 0.20) sintered at various temperatures have been investigated thoroughly. The lattice parameter, average grain size and initial permeability increase with Mn substitution. Both bulk density and initial permeability increase with increasing sintering temperature from 1250 to 1300 °C and above 1300 °C they decrease. The Ni_0.30Mn_0.20Zn_0.50Fe₂O₄ sintered at 1300 °C shows the highest relative quality factor and highest initial permeability among the studied samples. The initial permeability strongly depends on average grain size and intragranular porosity. From the magnetization as a function of applied magnetic field, M(H), it is clear that at room temperature all samples are in ferrimagnetic state. The number of Bohr magneton, n(μ_B), and Neel temperature, T_N, decrease with increasing Mn substitution. It is found that Mn substitution in Ni_0.50−xMn_xZn_0.50Fe₂O₄ (where x=0.20) decreases the Neel temperature by 25% but increases the initial permeability by 76%. Possible explanation for the observed characteristics of microstructure, initial permeability, DC magnetization and Neel temperature of the studied samples are discussed.     

Effect of Sn-doping on the structural,magnetic and magnetocaloric properties of La0.67Ba0.33Mn1−xSnxO3 compounds

Magnetocaloric effect (MCE) in fine-grained perovskite manganites of the type La_0.67Ba_0.33Mn_1−xSn_xO₃ (x=0.05, 0.1 and 0.15) were prepared by the solid-state method. The prepared samples remain single phase and exhibit paramagnetic to ferromagnetic phase transition (T_C) at 340, 325 and 288 K for x=0.05, 0.1 and 0.15, respectively. From the measured magnetization data of La_0.67Ba_0.33Mn_1−xSn_xO₃ compounds as a function of field (2 T), the associated magnetic entropy change close to their respective Curie temperatures and the relative cooling power (RCP) have been determined. Large MCE has been obtained in all samples and |ΔS_M|_max reached the highest value of 2.49 J/kg K at T_C (288 K) for the sample x=0.15, with H=2 T.     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Band-edge exciton transitions temperature in multiple stacked self-assembled (In1−xMnx)As quantum dot arrays

Multiple stacked self-assembled (In_1−xMn_x)As quantum-dot (QD) arrays were grown on GaAs (100) substrates by using molecular-beam epitaxy with a goal of producing (In_1−xMn_x)As QDs with a semiconductor phase and a high ferromagnetic transition temperature (T_c). Atomic force microscopy, magnetic force microscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray fluorescence measurements showed that crystalline multiple stacked (In_0.84Mn_0.16)As with symmetric single-domain particle were formed on GaAs substrates. Near-field scanning optical spectroscopy spectra at 10 K for the (In_0.84Mn_0.16)As multiple stacked QDs showed that the band-edge exciton transitions were observed. The magnetization curve as a function of the magnetic field at 5 and 300 K indicated that the multiple stacked (In_0.84Mn_0.16)As QDs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the T_c was as high as 400 K. These results provide important information on the optical and magnetic properties for enhancing the T_c of (In_1−xMn_x)As-based nanostructures.     

Magnetic properties of the Ce2Fe17−xMnx helical magnets up to high magnetic fields

Magnetic properties of the Ce₂Fe_17−xMn_x, x=0–2, alloys in magnetic fields up to 40 T are reported. The compounds with x=0.5–1 are helical antiferromagnets and those with 1<x?2 are helical ferromagnets or helical antiferromagnets at low and high T, respectively. Mn ions in the system carry average magnetic moment of 3.0±0.2 μ_B that couple antiparallelly to the Fe moments. Easy-plane magnetic anisotropy in the Ce₂Fe_17−xMn_x compounds weakens upon substitution of Mn for Fe. The absolute value of the first anisotropy constant in the Ce₂Fe_17−xMn_x helical ferromagnets decreases slower with increasing temperature than that calculated from the third power of the spontaneous magnetization. Noticeable magnetic hysteresis in the Ce₂Fe_17−xMn_x, x=0.5–2, helical magnets over the whole range of magnetic fields reflects mainly irreversible deformation of the helical magnetic structure during the magnetization of the compounds. A contribution from short-range order (SRO) magnetic clusters to the magnetic hysteresis of the helical magnets has been also estimated.     

Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type

It is expected that joint existence of ferromagnetic properties and ferroelectric structural phase transition in diluted magnetic semiconductors IV-VI leads to new possibilities of these materials. Temperature of ferroelectric transition for such crystals can be tuned by the change of Sn/Ge ratio. Magnetic susceptibility, Hall effect, resistivity and thermoelectric power of Ge_1−x−ySn_xMn_yTe single crystals grown by Bridgeman method (x=0.083-0.115; y=0.025-0.124) were investigated within 4.2-300 K. An existence of FM ordering at T_C∼50 K probably due to indirect exchange interaction between Mn ions via degenerated hole gas was revealed. A divergence of magnetic moment temperature dependences at T?T_C in field-cooled and zero-field-cooled regimes is obliged to magnetic clusters which are responsible for superparamagnetism at T>T_C≈T_f (freezing temperature) and become ferromagnetic at T_C arranging spin glass state at T<T_f≈T_C. Phase transition of ferroelectric type at T≈46 K was revealed. Anomalous Hall effect which allows to determine magnetic moment was observed.     

Room temperature ferromagnetism behavior of Sn1−xMnxO2 powders

In this paper, we have investigated Mn-doped SnO₂ powder samples prepared by solid-state reaction method. X-ray diffraction showed a single phase polycrystalline rutile structure. The atomic content of Mn ranged from ∼0.8 to 5 at%. Room temperature M-H loops showed a ferromagnetic behavior for all samples. The ferromagnetic Sn_0.987Mn_0.013O₂ showed a coercivity H_c=545 Oe, which is among the highest reported for dilute magnetic semiconductors. The magnetic moment per Mn atom was estimated to be about 2.54 μ_B of the Sn_0.9921Mn_0.0079O₂ sample. The average magnetic moment per Mn atom sharply decreases with increasing Mn content, while the effective fraction of the Mn ions contributing to the magnetization decreases. The magnetic properties of the Sn_1−xMn_xO₂ are discussed based on the competition between the antiferromagnetic superexchange coupling and the F-center exchange coupling mechanism, in which both oxygen vacancies and magnetic ions are involved.     

EPR study of the diluted magnetic semiconductor CuGa1−xMnxTe2

Electron paramagnetic resonance (EPR) experiments were made in the diluted magnetic semiconductor CuGa_1−xMn_xTe₂, in the temperature range 70<T<300 K. The samples were synthesized by direct fusion of stoichiometric mixtures of the elements, with Mn composition from x=0.0 to 0.25. The EPR spectra were measured as function of temperature, Mn composition, and field orientation. The temperature variation of the resonance field shows a critical point at about 235 K, and is associated with a transition from the ferromagnetic to the superparamagnetic state. The resonance field was also measured as a function of the field angle, and displays a well-defined uniaxial symmetry. This uniaxial field depends on the Mn concentration and is due to tetragonal distortions induced by Mn²⁺ at Ga sites, and the demagnetizing effects due to formation of ferromagnetism (FM) Mn-clusters.     

Room-temperature ferromagnetism in Sn1−xMnxO2 nanocrystalline thin films prepared by ultrasonic spray pyrolysis

Sn_1−xMn_xO₂ (x=0.01-0.05) thin films were synthesized on quartz substrate using an inexpensive ultrasonic spray pyrolysis technique. The influence of doping concentration and substrate temperature on structural and magnetic properties of Sn_1−xMn_xO₂ thin films was systematically investigated. X-ray diffraction (XRD) studies of these films reflect that the Mn³⁺ ions have substituted Sn⁴⁺ ions without changing the tetragonal rutile structure of pure SnO₂. A linear increase in c-axis lattice constant has been observed with corresponding increase in Mn concentration. No impurity phase was detected in XRD patterns even after doping 5 at% of Mn. A systematic change in magnetic behavior from ferromagnetic to paramagnetic was observed with increase in substrate temperature from 500 to 700 °C for Sn_1−xMn_xO₂ (x=0.01) films. Magnetic studies reveal room-temperature ferromagnetism (RTFM) with 3.61×10⁻⁴ emu saturation magnetization and 92 Oe coercivity in case of Sn_1−xMn_xO₂ (x=0.01) films deposited at 500 °C. However, paramagnetic behavior was observed for the films deposited at a higher substrate temperature of 700 °C. The presence of room-temperature ferromagnetism in these films was observed to have an intrinsic origin and could be obtained by controlling the substrate temperature and Mn doping concentration.     

Magnetic properties of half-metallic semi Heusler Co1−xCuxMnSb compounds

A study of the half-metallic character of the semi Heusler alloys Co_1−xCu_xMnSb (0?x?0.9) is presented. We investigated the saturation magnetization M_S at temperatures from 5 K to room temperature and the temperature dependence of the DC magnetic susceptibility χ above Curie temperature T_C. The magnetic moments at 5 K, for most compositions are very close to the quantized value of 4 μ_B for Mn³⁺ ion, the compound with 90% Co substituted by Cu is still ferromagnetic with M_S (5 K)=3.78 μ_B/f.u. These results emphasize the role of Co atoms in maintaining the ferromagnetic order in the material. The Curie temperature is decreased from 476 K to about 300 K as the Cu content increases from 0% to 90%. Above T_C, the χ⁻¹ vs T curves follow very well the Curie–Weiss law. The effective moment μ_eff and paramagnetic Curie temperature θ are derived. A comparison between the values of M_S at 5 K and μ_eff shows a transition from localized to itinerant spin system in these compounds.     

Magnetocaloric effect in high Ni content Ni52Mn48−xInx alloys under low field change

Ni-rich Heusler alloys Ni₅₂Mn_48−xIn_x (x=15.5, 16 and 16.5) were prepared by the arc melting method. X-ray diffraction analysis revealed that the martensite has orthorhombic structure (S.G. Pmm2) at room temperature. The only alloy with x=15.5 has structural transmission from martensite to austenite without any magnetic transmission. The temperature dependence and the field dependence of the magnetization measurement indicated that the magnetization increased with the decreasing of the concerntration of Mn. The lesser the Mn atoms located in the In atom sites, the weaker the total AFM interaction in the system. Giant entropy changes ΔS_M(T, H) were found in Ni₅₂Mn_48−xIn_x alloys with the maximum ΔS_M value of 22.3 J kg K for the sample with x=16.5 at 270 K under the magnetic field change of 1.5 T.     

Spin glass like behavior in Cd0.42Mn0.58In2S4

The magnetic behavior of the diluted magnetic semiconductor Cd_0.42Mn_0.58In₂S₄ has been study by dc magnetization and ac susceptibility experiments. Zero field cooled and field cooled measurements reveal irreversibility below T_irr=2.60±0.15 K. Ac susceptibility data, performed as a function of the temperature and the frequency, confirm the spin-glass like behavior of the material with T_f=2.75±0.15 K. High temperature susceptibility data follow a typical Curie-Weiss law with θ=−74±1 K which suggests predominant antiferromagnetic interactions. The randomness of the magnetic ions, necessary to explain the magnetic behavior of the material, has been determined by X-ray powder diffraction experiments.     

Structural, chemical and magnetic investigations of polycrystalline Zn1−xMnxO

Present study reports the detailed structural and magnetic, as well as chemical analysis of polycrystalline Zn_1−xMn_xO (where x=0, 0.005, 0.01, 0.03, 0.05 and 0.1) samples synthesized by the high-temperature solid state reaction route. X-ray diffraction studies reveal the presence of secondary phase for higher Mn-doping concentrations (x≥0.03). Secondary phase formation having spinel structure is confirmed and reported as an evidence for the first time using transmission electron microscopy study. Chemical investigations using X-ray photoelectron spectroscopy showed the presence of Mn in two valence states. From the observed results we are of the opinion that Zn²⁺ ions, mainly present at or near grain boundaries, diffuse into manganese oxide to form a stable spinel phase Zn_xMn_3−xO₄ at or near the grain boundaries of ZnO/Zn_1−xMn_xO. Magnetization measurements did not show any magnetic transition down to 5 K.     

Effect of Fe substitution on magnetocaloric effect in La0.7Sr0.3Mn1−xFexO3 (0.05≤x≤0.20)

We have studied the effect of Fe substitution on magnetic and magnetocaloric properties in La_0.7Sr_0.3Mn_1−xFe_xO₃ (x=0.05, 0.07, 0.10, 0.15, and 0.20) over a wide temperature range (T=10-400 K). It is shown that substitution by Fe gradually decreases the ferromagnetic Curie temperature (T_C) and saturation magnetization up to x=0.15 but a dramatic change occurs for x=0.2. The x=0.2 sample can be considered as a phase separated compound in which both short-range ordered ferromagnetic and antiferromagnetic phases coexist. The magnetic entropy change (−ΔS_m) was estimated from isothermal magnetization curves and it decreases with increase of Fe content from 4.4 J kg⁻¹ K⁻¹ at 343 K (x=0.05) to 1.3 J kg⁻¹ K⁻¹ at 105 K (x=0.2), under ΔH=5 T. The La_0.7Sr_0.3Mn_0.93Fe_0.07O₃ sample shows negligible hysteresis loss, operating temperature range over 60 K around room temperature with refrigerant capacity of 225 J kg⁻¹, and magnetic entropy of 4 J kg⁻¹ K⁻¹ which will be an interesting compound for application in room temperature refrigeration.     

Charge order melting and magnetic transition in Nd0.5(1+x)Ca0.5(1−x)Mn(1−x)CrxO3 system

The magnetic property of double doped manganite Nd_0.5(1+x)Ca_0.5(1−x)Mn_(1−x)Cr_xO₃ with a fixed ratio of Mn³⁺:Mn⁴⁺=1:1 has been investigated. For the undoped sample, it undergoes one transition from charge disordering to charge ordering (CO) associated with paramagnetic (PM)-antiferromagnetic (AFM) phase transition at T<250 K. The long range AFM ordering seems to form at 35 K, rather than previously reported 150 K. At low temperature, an asymmetrical M-H hysteresis loop occurs due to weak AFM coupling. For the doped samples, the substitution of Cr³⁺ for Mn³⁺ ions causes the increase of magnetization and the rise of T_c. As the Cr³⁺ concentration increases, the CO domain gradually becomes smaller and the CO melting process emerges. At low temperature, the FM superexchange interaction between Mn³⁺ and Cr³⁺ ions causes a magnetic upturn, namely, the second FM phase transition.     

Structural, thermal and magnetic properties of Ni1−xMnxFe2O4 nanoferrites

In this paper, the structural, thermal and magnetic properties of Ni_1−xMn_xFe₂O₄ are presented. It is observed that high concentration of Mn²⁺ ions into NiFe₂O₄ tends to reduce the particle size. Calcination at 500 °C has resulted in the growth of Ni_1−xMn_xFe₂O₄ nanoparticles, but the calcination at 900 °C has led to the evaporation of the majorities of the polyvinyl alcohol. After calcination at 900 °C, crystallographically oriented NiMnFe₂O₄ nanoparticles are formed. These Ni_1−xMn_xFe₂O₄ nanoparticles show hysteresis behaviour upon magnetization. On the other hand, saturation magnetization (Ms) values decreases with increasing Mn content in ferrite due to the influence of Mn²⁺ ion in the sub lattice.     

Structure, magneto-structural transitions and magnetocaloric properties in Ni50−xMn37+xIn13 melt spun ribbons

Melt spun Ni_50−xMn_37+xIn₁₃ (2≤x≤5) ribbons were investigated for the structure, microstructure, magneto-structural transitions and inverse magnetocaloric effect (IMCE) associated with the first-order martensitic phase transition. The influence of excess Mn in Ni site (or Ni/Mn content) on the martensite transition and the associated magnetic and magnetocaloric properties are discussed. It was found that with the increase in Mn content, the martensitic transition shifted from 325 to 240 K as x is varied from 2 to 4, and the austenite phase was stabilized at room temperature. The x=5 ribbon did not show the martensitic transition. For the x=3 ribbon, the structural and magnetic transitions are close together unlike in the x=4 ribbon in which they are far (∼60 K) apart. The zero field cooled and field cooled curves support the presence of exchange bias blocking temperature due to antiferromagnetic interactions in the ribbons. A large change in the magnetization between the martensite and austenite phases was observed for a small variation in the Ni/Mn content, which resulted in large IMCE. A large positive magnetic entropy change (ΔS_M) of 32 J/kg K at room temperature (∼ 300 K) for a field change of 5 T with a net refrigeration capacity of 64 J/kg was obtained in the Ni₄₇Mn₄₀In₁₃ ribbon.     

Effects of indium doping on the superconducting properties of YBa2Cu3Oy sintered compounds and thin films

We investigated the effects of indium doping on the superconducting properties of YBCO sintered samples and thin films. In₂O₃-doped YBCO and YBa₂Cu_3−xIn_xO_y sintered samples showed a gradual decrease in the critical temperature (T_c) with increasing indium content; however, a T_c value above 80 K was maintained even up to 30 vol.% addition and x = 0.4, respectively. Ba₃Cu₃In₄O₁₂ was detected by X-ray diffractometry and energy-dispersive X-ray spectroscopy as a reaction product for both sintered samples. The normalized J_c under a magnetic field of 0.1 T showed a maximum at x = 0.3. Indium-doped YBCO films prepared by pulsed laser deposition showed a similar dependence of T_c on indium content as the sintered samples.