Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.     

Switching effect in ferromagnetic metallic junctions

Mechanisms are determined for homogeneous current-induced switching in ferromagnetic metallic junctions of the spin-valve type. The spin flux is perpendicular to the junction surface and is directed from the pinned layer to the free one. The switching is due to the joint action of two mechanisms: (i) current-induced surface torque and (ii) current-induced injection of nonequilibrium longitudinal spins into the free-layer bulk. Both mechanisms lead to the instability and reorientation of magnetization; however, only the injection mechanism can stabilize the switching.     

Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve

Recently, it has been predicted that a spin-polarized electrical current perpendicular to plane directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this Letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.     

Magnetization switching modes in nanopillar spin valve under the external field

The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field.Magnetization switching is found to take place when the current density exceeds a threshold.By analyzing precessional trajectories,evolutions of domain walls and magnetization switching times under the perpendicular magnetic field,there are two different magnetization switching modes:nucleation and domain wall motion reversal;uniform magnetization ...     

Roles of spin-polarized current and spin accumulation in the current-induced magnetization switching

To clarify the contributions of spin-polarized current and spin accumulation to the current-induced magnetization switching, the effects of the top electrode size of the magnetic nanopillar are investigated both theoretically and experimentally. Theoretical calculation demonstrates that the spin-polarized current and the spin accumulation can be adjusted in opposite directions by modifying the size of the top electrode. Increase in the size of the top electrode suppresses the spin accumulation but enhances the spin-polarized current inside the nanopillar. On the other hand, it is shown experimentally that the nanopillar with a wide top electrode exhibits small critical switching current compared to the nanopillar with a narrow top electrode. The results suggest that the spin-polarized current contributes to the current-induced magnetization switching dominantly over the spin accumulation.     

垂直自由层倾斜极化层自旋阀结构中的磁矩翻转和进动

在理论上研究了垂直自由层和倾斜极化层自旋阀结构中自旋转移矩驱动的磁矩翻转和进动.通过线性展开包括自旋转移矩项的Landau-Lifshitz-Gilbert方程并使用稳定性分析方法,得到了包括准平行稳定态、准反平行稳定态、伸出膜面进动态以及双稳态的磁性状态相图.发现通过调节电流密度和外磁场的大小可以实现磁矩从稳定态到进动态之间的转化以及在两个稳定态之间的翻转.翻转电流随外磁场的增加而增加,并且受自旋极化方向的影响.当自旋极化方向和自由层易磁化轴方向平行时,翻转电流最小;当自旋极化方向和自由层易磁化轴方向垂直时,翻转电流最大.通过数值求解微分方程,给出了不同磁性状态磁矩随时间的演化轨迹并验证了相图的正确性.     

Spin-injection mechanism of magnetization reversal and hysteresis of current in magnetic junctions

A novel mechanism is proposed for magnetization reversal by the current of magnetic junctions with two metallic ferromagnetic layers and thin separating nonmagnetic layer. The spin-polarized current flows perpendicularly to the interfaces between the ferromagnetic layers, in one of which the spins are pinned and in the other they are free. No domain structure is formed in the ferromagnetic layers. The current breaks spin equilibrium in the free layer, which manifests itself in the injection or extraction of spins. The nonequilibrium spins interact with the magnetization of the lattice due to the effective field of s-d exchange, which is current dependent. At currents exceeding a certain threshold value, this interaction leads to magnetization reversal. Two threshold currents for magnetization reversal have been obtained theoretically, which are reached as the current increases or decreases, respectively. Thus, the phenomenon of current hysteresis is found. The calculated results are in good agreement with experiments on magnetization reversal by current in three-layer junctions of composition Co(I)/Cu/Co(II) prepared in a pillar form.     

Magnetoresistance and magnetization studies through a Cu interlayer in spin valves of NiFe/Cu/NiFe/FeMn

The influence of the Cu layer thickness on the magnetic and magnetotransport properties has been investigated in Ta/NiFe/Cu/NiFe/FeMn spin valves. The magnetization and magnetoresistance measurements were carried out for magnetic field applied along the easy-axis direction. A phenomenological model, which assumes formation of a planar domain wall at the anti-ferromagnetic side of the interfaces as well as bilinear coupling between the ferromagnetic layers, was used to derive the anisotropy characteristics and orientation of each NiFe layer magnetization. The anisotropy and spin valve magnetoresistance were simulated numerically and compared with the experiment. It was found that the anisotropy magnetoresistance is negligible and that there is a poor agreement for the spin-valve one, which was attributed to the model (valid for ferromagnetic layers in single-domain state only) used for its calculation. It was found that the increase of the Cu layer thickness provokes a decrease of the interdiffusion between the NiFe and FeMn layers, and, as consequence, changes of the uniaxial anisotropy of the pinned NiFe layer, of the exchange interaction between the pinned NiFe layer and the FeMn ones, as well as of the exchange-bias field of the pinned NiFe layer.     

Temperature dependence of current-induced magnetization switching in spin valves with a ferrimagnetic CoGd free layer

The temperature dependence of current-induced magnetization switching of ferrimagnetic CoGd free layers in spin valves is explored. At temperatures well above and well below the magnetization compensation temperature (T(MC)) of CoGd, a current flowing from the free layer to the CoFe fixed layer aligns the moments of the two layers parallel, and a current flowing in the opposite direction aligns them antiparallel. However, for intermediate temperatures just above T(MC), the current-induced alignment of the moments is reversed. We attribute this effect to the different compensation temperatures of the net magnetization and angular momentum of CoGd.     

Computer simulation of magnetization flop in magnetic tunnel junctions exchange-biased by synthetic antiferromagnets

Computer simulation in a single domain multilayer model is used to investigate magnetization flop in magnetic tunnel junctions, exchange-biased by pinned synthetic antiferromagnets with the multilayer structure NiFe/AlO_x/Co/Ru/Co/FeMn. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy and hence increased coercivity of the Co layers in the synthetic antiferromagnet. However, when the synthetic antiferromagnet is not or weakly pinned, the magnetization directions of the two layers sandwiching AlO_x, which mainly determine the magnetoresistance, are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal MR change from the high MR state to zero, irrespective of the direction of the free layer switching. This emphasizes an importance of a strong pinning of the synthetic antiferromagnet at small cell dimensions. The threshold field for magnetization flop is found to increase linearly with increasing antiferromagnetic exchange coupling between the two Co layers in the synthetic antiferromagnet. The restoring force from magnetization flop to the normal synthetic antiferromagnetic structure is roughly proportional to the resistance to magnetization flop. Irrespective of the magnetic parameters and cell sizes, the state of magnetization flop does not exist near H_a=0, indicating that magnetization flop is driven by the Zeeman energy.     

自旋轨道矩调控的垂直磁各向异性四态存储器结构

利用氧化钽缓冲层对垂直各向异性钴铂多层膜磁性的影响,构想并验证了一种四态存储器单元.存储器器件包含两个区域,其中一区域的钴铂多层膜[Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)]直接生长在热氧化硅衬底上,另一个区域在磁性膜和衬底之间沉积了一层氧化钽作为缓冲层[TaO x(0.3 nm)/Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)],缓冲层导致两个区域的垂直磁各向异性不同.在固定的水平磁场下对器件施加与磁场同向的电流,由于电流引起的自旋轨道耦合力矩,两个区域的磁化取向均会发生翻转,且拥有不同的临界翻转电流.改变通过器件导电通道的电流脉冲形式,器件的磁化状态可以在4个态之间切换.本文器件的结构为设计自旋轨道矩存储器件提供了新的思路.     

Synthetic Co50Pt50/Ru/CoFe hard–soft trilayer in spin valves

The influence of deposition power and seedlayer on the properties of hard magnet Co₅₀Pt₅₀ was studied. Co₅₀Pt₅₀(/Co₉₀Fe₁₀)/Ru/Co₉₀Fe₁₀ trilayer was used as pining/pinned layer in spin valves. The influences of different hard layer, soft layer and free layer on exchange bias, interlayer coupling, and magnetoresistance (MR) ratio were studied. Weak antiferromagnetic interlayer coupling was obtained by adjusting the thickness of hard and soft layers. MR of a spin valve with structure Cr2/CoFe0.5/CoPt4/CoFe0.5/Ru0.8/CoFe2.2/Cu2.05/CoFe2.6/Cu1.1/Ta1 reached 10.68% (unit in nm), which is comparable to those of IrMn-based synthetic spin valves. The increment of the coercivity of the free layer is mainly due to the static magnetic interaction between the hard layer and the free layer.     

Influence of thickness on current-induced magnetization switching in L1_0-FePt single layer

The thickness dependent spin–orbit torque(SOT) in an L1_0-Fe Pt single layer is investigated in this work. As the thickness increases from 8 nm to 16 nm, the magnetization switching ratio in the L1_0-Fe Pt film with higher chemical ordering becomes smaller. It is noted that compared with 3-nm-thick L1_0-Fe Pt film, 8-nm-thick L1_0-Fe Pt film can switch much magnetization with the increase of chemical ordering. When the Fe Pt film is thick enough, the SOT in Fe Pt is closely related to the L1_0-ordered structure, which indicates a bulk nature. Therefore, the disordering plays an important role in the magnetization switching only for the ultra-thin Fe Pt films, while the structural gradient may play an important role for thicker films. However, both of the two mechanisms cannot fully explain the process of magnetization switching and the spin current generation. Although many factors influence SOT, here in this work we emphasize only the bulk nature of strong SOC in L1_0-Fe Pt through density functional theory calculations, which should generate large spin current due to spin Hall effect.     

Current-induced excitations in single cobalt ferromagnetic layer nanopillars

Current-induced excitations in Cu/Co/Cu single ferromagnetic layer nanopillars ( approximately 50 nm in diameter) have been studied experimentally as a function of Co layer thickness at low temperatures for large applied fields perpendicular to the layers. For asymmetric junctions current-induced excitations are observed at high current densities for only one polarity of the current and are absent at the same current densities in symmetric junctions. These observations confirm recent predictions of spin-transfer torque induced spin-wave excitations in single layer junctions with a strong asymmetry in the spin accumulation in the leads.     

Spin-transfer induced ultrafast precessional switching enhanced by interface anisotropy in a ferromagnetic nanopillar

Spin-transfer induced ultrafast precessional switching of magnetization in a Co/Cu/Co nanopillar device is studied. Micromagnetic calculations show that precessional magnetization switching occurs above a threshold current. The presence of interface uniaxial anisotropy in the Co-thin film free layer influences heavily the current and the energy required to initiate the switching in the device, and the speed of the precessional switching. The threshold current and the precessional switching time are significantly reduced by this effect.     

自旋阀中电流诱导磁化翻转行为的研究

通过实验研究了一种特殊的反对称自旋阀结构．研究发现,随着外加磁场的增大,该结构纳米器件表现出了一种由“逆CIMS”向“正常CIMS”的转变．这种现象是因为：该反对称自旋阀在不同的外加磁场下有不同的磁化取向,因而引起不同的CIMS行为． 关键词： CPP ESPV CIMS     

Current-driven magnetization switching and domain wall motion in nanostructures—Survey of recent experiments

An overview of recent experimental studies and new routes in the field of current-driven magnetization dynamics in nanostructured materials is given. The review introduces the basic concepts (Landau–Lifshitz phenomenology, critical current, spin currents in relation to spin accumulation, adiabatic/non-adiabatic spin-torque) and describes the main results of recent experiments on current-driven magnetization reversal within vertical pillar-like nanostructures and current-driven domain wall motion within laterally confined specimens. While for the pillar systems a discussion is provided of how the introduction of layers with perpendicular magnetic anisotropy, tunnel barriers and exchange bias and(or) oxide layers can be used to reduce the critical current densities for current-induced switching, the role of perpendicular anisotropy, use of spin valve structures, diluted magnetic semiconductors and epitaxial materials to increase the domain wall velocities are reviewed in the case of current-driven domain wall movement within lateral systems.     

Switching of a spin valve with three magnetic layers

A spin valve with two pinned ferromagnetic layers sandwiching a free ferromagnetic layer with a thickness smaller than the spin diffusion length in the same layer and than the domain wall thickness is considered. The instability conditions are determined for various mutual orientations of the magnetization of the layers. The possibility of a considerable decrease in the instability threshold due to joint action of spin-polarized current and an external magnetic field is indicated. It is shown that in addition to collinear states, a nonequilibrium noncollinear state can exist, into which the system is switched after exceeding the instability threshold.     

Efficient magnetization reversal with noisy currents

We propose to accelerate reversal of the ferromagnetic order parameter in spin valves by electronic noise. By solving the stochastic equations of motion we show that the current-induced magnetization switching time is drastically reduced by a modest level of externally generated current (voltage) noise. This also leads to a significantly lower power consumption for the switching process.     

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni₂₀Fe₈₀ and W/Co₂₀Fe₆₀B₂₀)and the topological insulator/ferromagnet(Bi₂Se₃/Ni₂₀Fe₈₀).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.