Structure and magnetic properties of magnetostrictive compounds Tb0.36Dy0.64(Fe0.85Co0.15)2−xBx (0⩽x⩽0.15)

Crystal structure and magnetic properties of magnetostrictive compounds Tb_0.36Dy_0.64(Fe_0.85Co_0.15)_2−xB_x (0?x?0.15) have been investigated at room temperature. The matrix of these compounds keeps a cubic MgCu₂-type structure. Lattice parameter a of the Laves phase decreases to reach a minimum at x=0.10, then increases with increasing boron content. Through analyzing the Mössbauer spectra, the easy magnetization direction (EMD) for all samples is confirmed to lie along 〈111〉 direction at room temperature, suggesting the presence of the giant magnetostriction. The mean hyperfine field H_hf and the deduced iron moment μ_Fe increase with increasing boron content, resulting in the enhancement of both Curie temperature T_C and spin reorientation temperature T_r. Although the addition of B enlarges the magnetocrystalline anisotropy constant K₁, the composition dependence of the ratio λ/K₁ for Tb_0.36Dy_0.64(Fe_0.85Co_0.15)_2−xB_x, however, reaches a maximum value at x=0. 05 under high magnetic fields.     

Magnetic characterization and thermoelectric power of Ni1−yZny Cu0.3Fe1.7 O4; 0.0⩽y⩽0.6

Samples of Ni_1−yZn_yCu_0.3Fe_1.7O₄; 0.0?y?0.6 were prepared by the solid state reaction method. X-ray investigations were carried out in order to assure the formation of the samples in single spinel phase. The analysis of X-ray data shows that the unit cell parameter increases with increasing Zn concentration and ascribed to the variation of the predicted cation distribution. Seebeck coefficient measurements were performed to know the type of charge carriers participating in the conduction mechanism. The magnetic susceptibility for the prepared samples was measured using Faraday^’s method at different temperatures as a function of the magnetic field intensity. The magnetic parameters were calculated from the magnetic susceptibility data, in the temperature range (300–800 K) at three different magnetic field intensities of (1280, 1733 and 2160 Oe). The effective magnetic moment (μ_eff) showed that, the critical Zn content was y=0.2$y=0.2$.     

Magnetic and transport properties in double-doping La(2+4x)/3Sr(1−4x)/3Mn1–xCuxO3 (0⩽x⩽0.20) systems

A series of the double-doping samples La_(2+4x)/3Sr_(1−4x)/3Mn_1–xCu_xO₃(0?x?0.2)$(0?x?0.2)$with the Mn³⁺/Mn⁴⁺ ratio fixed at 2:1 and the single-doping samples La_2/3Sr_1/3Mn_1–xCu_xO₃(0?x?0.2)$(0?x?0.2)$ have been investigated. For the double-doping samples, though the ratio Mn³⁺/Mn⁴⁺=2:1 has been generally recognized the optimum ratio, the Curie temperature _TC$T_{\mathrm{C}}$ and metallic–insulator transition temperature _Tp1$T_{\mathrm{p}1}$ are more rapidly decreased by Cu substitution than that corresponding to single-doping samples. And the resistivity ρ$\rho$ value for the double doping is larger about two or three orders of magnitude than that corresponding to single doping. At the same time, two resistivity peaks and two magnetoresistance (MR) peaks appear. We suggest that for the double-doping samples the A-site cation size 〈r_A〉 and the A-site mismatch factor σ²${\sigma }^2$ decreases with increasing doping level, which leads to the system microstructural distortion. This microstructural distortion makes the Mn³⁺–O–Mn⁴⁺ cut off more cluster-spin except for the clusters induced by Cu. These cluster interfaces contribute to ρ$\rho$, which exceeds far the contribution of e_g electron decreasing with doping increasing in the single doping. At the same time, such interface scattering also gives rise to the appearance of second peak for the double-doping samples. The experimental results shows that double doping could be also a potential way in tuning colossal MR (CMR), which can give a guide for the adequate selection of CMR materials.     

Structural,magnetic, and transport properties in La(2+4x)/3Sr(1−4x)/3Mn1−xCuxO3 (0⩽x⩽0.20) system

A series of the double-doping samples La_(2+4x)/3Sr_(1−4x)/3Mn_1−xCu_xO₃(0?x?0.2)$(0?x?0.2)$ with the Mn³⁺/Mn⁴⁺ ratio fixed at 2:1 have been prepared. The structural, magnetic, transport properties and magnetoresistance of the series samples have been investigated. It is found that no apparent crystal structure change is introduced by Cu doping up to x=0.20$x=0.20$. But the Curie temperature _TC$T_{\mathrm{C}}$ and magnetization M   are strongly affected by Cu substitution. A remarkable magnetotransport behavior, characterized by double bumps, is observed, and an obvious low-temperature upturn is found in the range of 0.07?x?0.12$0.07?x?0.12$. As a result, the temperature range of colossal magnetoresistance (CMR) is greatly broadened. Moreover, it is found that the room temperature magnetoresistance (MR) of double-doping samples is obviously larger that the undoped La_2/3Sr_1/3Mn_1−xCu_xO₃ at 300 K, which can give a guide for the adequate selection of the room temperature CMR materials.     

Magnetic,transport and microstructural properties of polycrystalline samples with nominal composition of La0.7Ca0.3Mn1−xVxO3 (0⩽x⩽0.2)

Polycrystalline samples with nominal composition of La_0.7Ca_0.3Mn_1−xV_xO₃ (0?x?0.2) sintered in air were investigated by ac susceptibility, dc magnetization, magnetoresistance (MR), X-ray diffraction (XRD), scanning electron microscopy (SEM), and differential thermal analysis (DTA) measurements. It is found that V could not substitute for Mn to form La_0.7Ca_0.3Mn_1−xV_xO₃ phase when the samples are sintered in air. The obtained samples contain several phases such as (La, Ca)Mn_1−δO₃, LaCa₃V₃O₁₂, Mn₃O₄ phases, etc. and constitute multi-phase composites. The Curie temperature T_C and spontaneous magnetization of the composites decrease, and the resistance of the composites increases as the V content increases. The addition of V may effectively improve the low-field MR response at low temperatures due to the variation in the microstructure of the composites.     

Heterogeneous magnetic and electronic states in Ca1−xLaxMnO3−δ (x⩽0.12) single crystals with electron doping

The magnetic, transport, and optical properties of electron-doped Ca_1−xLa_xMnO_3−δ single crystals with x  ?0.12 were studied. The magnetic measurements show that in single crystals with x=0$x=0$ and 0.05 the G-type AFM phase with weak FM component is realized and in crystals with x=0.10$x=0.10$ and 0.12 the G- and C-type AFM phases coexist. The C-type magnetic structure arises at less concentration of La than in polycrystalline samples as a result of oxygen vacancies being additional source of electrons. Under magnetic transitions in the G- and C-type phases, resistivity and magnetoresistance of the doped single crystals have anomalies. Optical absorption in IR range indicates formation of a charge gap in crystals with x=0.10$x=0.10$ and 0.12 at appearance of the C-AFM and monoclinic phase with orbital/charge ordering. By comparing optical and transport properties, heterogeneous electronic state and its relation with heterogeneous magnetic state are shown.     

Double M–I transitions and low-temperature resistivity minimum of La2/3Ca1/3Mn1−xCoxO3(0⩽x⩽0.15) manganite

A series of Mn-site Co-doping samples La_2/3Ca_1/3Mn_1−xCo_xO₃ (0?x?0.15) have been prepared. The structure, magnetic and transport properties of this system have been systematically investigated. All the samples showed good single phase, and the lattice parameters decreased with the increase of doping concentration x. Only one paramagnetic–ferromagnetic transition was observed. The Curie temperature T_C decreases gradually and the transition width becomes wider with the increase of x. The abnormal transport properties were induced by Co doping, characterized by the double metal–insulator transitions and low-temperature minimum behavior. The present results are discussed and possible explanations were given based on the related theory and previous reported results.     

Magnetostriction of TbxHo0.75−xPr0.25(Fe0.9B0.1)2 (x=0–0.3) compounds

The Tb_xHo_0.75−xPr_0.25(Fe_0.9B_0.1)₂ (x=0, 0.1, 0.15, 0.2, 0.25, and 0.3) compounds are found to stabilize in a cubic Laves phase structure. The lattice parameter, magnetostriction (at 10 kOe), and Curie temperature are found to increase with increasing Tb content. The compound with x=0.15 exhibits a possible anisotropy compensation between the Tb and (Ho/Pr) sublattices. The easy magnetization direction rotates towards the 〈1 1 1〉 from the 〈1 0 0〉 direction, with increasing Tb content. The splitting of the (4 4 0) peak accompanied by the spontaneous magnetostriction-induced rhombohedral distortion is observed for compounds with x?0.15 and the spontaneous magnetostriction (λ_1 1 1) is found to increase with Tb content.     

Structural and magnetic properties of Zn1−xCoxO (0<x⩽0.30) nanoparticles

We present a systematic investigation on the structural and magnetic properties of Zn_1−xCo_xO nanoparticles synthesized by an auto-combustion method. The single-phase Zn_1−xCo_xO crystallize in the wurtzite-type structure with a homogeneity range as large as x≈0.30, which enables the observation of some anomalies. The lattice parameter a and the unit cell volume V increase with the Co content, and anomalies are discernable around x=0.15 on the a−x and V−x curves. The magnetization data show no evidence of ferromagnetic (FM) ordering in our samples down to T=5 K, and the magnetization at 5 K and 5 T exhibits a maximum around x=0.125. Based on the detailed analysis of the magnetization data and the donor impurity band exchange model, the anomalies on composition dependence of both the lattice parameters and magnetization can be associated with an occurrence of cation percolation around the threshold x_p (≈1.5/Z=0.125 for three-dimensional lattice with coordination number Z=12). Within the framework of the donor impurity band exchange model, the absence of FM in the well-characterized Zn_1−xCo_xO can be attributed to insufficient donor electron concentration.     

Hall effect and sign reversal in Gd(Ba2−xNdx)Cu3O7+δ

We have investigated the Hall measurement of Gd(Ba_2−xNd_x)Cu₃O_7+δ with x=0, 0.05, 0.1, 0.15, and 0.2 in a magnetic field of 0–1 T. The nominal samples has been prepared by the conventional solid-state reaction technique. The iodometric titration experiment was carried out for samples. The Rietveld analysis of the X-ray diffraction patterns indicates that samples are mainly single phase. The normal state Hall coefficient behaves as 1/T in all samples. All samples with nominal compositions show single sign reversal with variation of magnetic field and temperature. The Hall resistivity of the samples with x=0 and 0.1 close to the superconducting transition temperature changes its sign with decreasing temperature and tends to a minimum −Δ_max, and then monotonically goes to zero. The absolute value of −Δ_max decreases with the increase of magnetic field. This can be qualitatively explained by a model calculation based on the time-dependent Ginsburg–Landau theory.     

Surface tension (γLV), surface energy (γSV) and crystal-melt interfacial energy (γSL) of metals

The results of temperature-dependent surface tension calculations of pure liquids aluminium (933-1200 K) and iron (1811-2500 K), in the framework of the theoretical considerations suggested by Eyring, are presented. It is observed that the surface tension decreases linearly with temperature. The calculated surface tension data are fitted as γ = 985-0.275(T − Tm) and γ = 1560-0.387(T − Tm) for Al and Fe, respectively. Moreover, the surface tension (γ_LV) at melting point, surface energy (γ_SV) and crystal-melt interfacial energy (γ_SL) are calculated for many metals. The agreement between the calculated and the reported measured values is reasonable.     

High-temperature electronic transport properties of La1−xCaxMnO3+δ (0.0?x?1.0)

La_1−xCa_xMnO_3+δ (0.0?x?1.0) samples were prepared and their resistivity and Seebeck coefficients were measured in the high-temperature range. Ca doping changes the ratio of Mn³⁺/Mn⁴⁺ and influences the electronic transport behavior markedly. With the increase of Ca concentration, the samples change from a p-type semiconductor to an n-type one and Seebeck coefficient becomes increasingly negative. Low doping (x=0.2) and high doping (x=0.8) induces the drop of the resistivity compared with undoped LaMnO_3+δ and CaMnO_3+δ samples due to the rise of carrier concentration. However, the resistivity of moderate-doped samples (x=0.4, 0.6) is larger than low- and high-doped samples because dopant scattering decreases carrier mobility.     

Low-temperature synthesis of nanocrystalline Ca1−xHoxMnO3−δ (0?x?0.3) powders

Nanocrystalline Ca_1−xHo_xMnO_3−δ (0?x?0.3) manganites were synthesized as phase-pure by a simple and instantaneous solution autogel combustion method, which is a low temperature initiated synthetic route to obtain fine grain size. All the samples, heated at 800 °C for 18 h, can be produced as phase-pure; the polycrystalline powders are homogeneous and possess ultrafine particle size. The holmium-doped calcium manganites retain the orthorhombic phase of the undoped sample. The scanning electron microscope (SEM) images revealed that the combustion-derived compounds exhibit particle size that decreases with holmium content from 300 to 80 nm. All manganites show two active IR vibrational modes near 400 and 600 cm⁻¹. The high temperature dependence of resistivity was measured using a standard four-probe method in the range 25-600 °C. All the samples exhibit semiconductor behaviour and holmium induces a marked decrease in the electrical resistivity when compared with the parent CaMnO₃. The results can be well attributed to the Mn⁴⁺/Mn³⁺ ratio and to the particle grain size.     

Non-adiabatic polaron hopping conduction in CaMn1−xCrxO3 (0?x?0.3)

DC electrical conductivity (σ_dc) of electron-doped antiferromagnetic CaMn_1−xCr_xO₃ (0?x?0.3) has been discussed elaborately in the light of polaron hopping conduction. The increase in Cr doping concentration increases the conductivity and decreases the activation energy. Non-adiabatic polaron hopping conduction is observed in all the manganites at high temperatures. The analysis of σ_dc data shows that small polarons are formed at lower concentrations (?5%) of Cr doping and undoped samples. However, large polarons are materialized at higher doping (?10%) concentrations. This is consistent with the fact that doped Cr³⁺ has larger ionic size compared to that of Mn⁴⁺. Again, strong electron-phonon (e-ph) interaction is perceived in undoped and 5% Cr-doped samples but not in manganites with larger doping concentration. This also confirms the formation of larger polarons with the increase of x. Mott's variable range hopping (VRH) model can elucidate the dc conductivity at very low temperatures. It has been detected that single phonon-assisted hopping is responsible for the dc conduction in the Cr-doped CaMnO₃ manganites.     

Spin transistor and quantum spin Hall-effects in CdBxF2−x–p-CdF2–CdBxF2−x sandwich nanostructures

Planar CdB_xF_2−x–p-CdF₂–CdB_xF_2−x sandwich nanostructures prepared on the surface of the n-type CdF₂ bulk crystal are studied to register the spin transistor and quantum spin Hall-effects. The current–voltage characteristics of the ultra-shallow p⁺–n junctions verify the CdF₂ gap, 7.8 eV, and the quantum subbands of the 2D holes in the p-type CdF₂ quantum well confined by the CdB_xF_2−xδ-barriers. The temperature and magnetic field dependencies of the resistance, specific heat and magnetic susceptibility demonstrate the high temperature superconductor properties for the CdB_xF_2−xδ-barriers. The value of the superconductor energy gap, 2Δ = 102.06 meV, determined by the tunneling spectroscopy method appears to be in a good agreement with the relationship between the zero-resistance supercurrent in superconductor state and the conductance in normal state, πΔ/e, at the energies of the 2D hole subbands. The results obtained are evidence of the important role of the multiple Andreev reflections in the creation of the high spin polarization of the 2D holes in the edged channels of the sandwich device. The high spin hole polarization in the edged channels is shown to identify the mechanism of the spin transistor and quantum spin Hall-effects induced by varying the top gate voltage, which is revealed by the first observation of the Hall quantum conductance staircase.     

Photoluminescence of Eu-doped CaMgSi2xO6+2x (1.00?x?1.20) phosphors in UV-VUV region

Alkaline-earth silicate phosphors CaMgSi_2xO_6+2x:Eu²⁺ (1.00?x?1.20) were prepared by traditional solid-state reaction. The phosphors showed an intense blue emission centered around 453 nm, with both 254 and 147 nm excitations. The host absorption below 200 nm in the excitation spectra consisted of two bands around 160 and 190 nm. The band around 160 nm was ascertained to be associated with the SiO₄-tetrahedra and MgO₆-polyhedra, and that around 190 nm was due to the CaO₈-polyhedra or some impurities. The incorporation of excess Si of less than 15% would not lead to formation of impurities and the results indicated that an appropriate Si excess could improve the Photoluminescence (PL) intensity in both ultraviolet (UV) and vacuum ultraviolet (VUV) regions     

Electrical and switching properties of the Se90Te10−xAgx (0?x?6) films

Amorphous Se₉₀Te_10−xAg_x (0?x?6) films are obtained by thermal evaporation technique under vacuum from the synthesized bulk materials on pyrographite and glass substrates. X-ray analysis shows the amorphous nature of the obtained films. The dc electrical conductivity was studied for different thicknesses (165-711 nm) as a function of temperature in the range (298-323 K) below the corresponding T_g for the studied films. The obtained results show that the conduction activation energy has a single value through the investigated range of temperature which can be explained in accordance with Mott and Davis model. The I-V characteristic curves for the film compositions are found to be typical for a memory switch. The mean value of the threshold voltage increases linearly with increasing film thickness (165-711 nm), while it decreases exponentially with increasing temperature in the investigated range for the studied compositions. The results are explained in accordance with the electrothermal model for the switching process. The effect of Ag on the studied parameters is also investigated.     

Glass transition behavior of binary GaxSe100−x (0?x?10) glass systems

The glass transition behavior of glassy Ga_xSe_100−x (x=0, 2.5, 5, 7.5 and 10) systems were investigated using differential scanning calorimetry (DSC). The variation of glass transition temperature, T_g, with Ga concentration has been studied. The value of activation energy of glass transition, E_g, has been found to increase with increase in Ga content. This increase in E_g has been explained in terms of the average heat of atomization for these glasses.     

Influence of the concentration in Fe-doped BaTiO3 on magnetoelectric couping of layered composites BaTi1−xFexO3–Tb1−yDyyFe2−z

Perovskites BaTi_1−xFe_xO₃ has been synthesized with the concentration x ranging from 0.01 to 0.02. Their transformation point of ferroelectric to paraelectric and the corresponding latent heat of the phase transformation were observed to decrease with increasing the doping level of Fe³⁺. Bonded layered composites BaTi_1−xFe_xO₃–Tb_1−yDy_yFe_2−z have been fabricated and their magnetoelectric effect has been investigated. The sample containing a layer of perovskite BaTi_0.985Fe_0.015O₃ was found to show the maximum transverse ME voltage coefficient, which is about 1422 mV Oe⁻¹ cm⁻¹ under a magnetic field of 1580 Oe, in these bilayers. Analysis shows that the Fe-doped BaTiO₃ with doping level at about 1.5% should have largest piezoelectric coefficient in these ceramics BaTi_1−xFe_xO₃.     

Effect of multielement doping on low-field magnetotransport in La0.7−xMmxCa0.3MnO3 (0.0?x?0.45) manganite

We report the synthesis, structure and low-field magnetotransport properties of Mischmetal (Mm)-doped La_0.7−xMm_xCa_0.3MnO₃ (0?x?0.45) manganite. Mischmetal—Mm—is a natural mixture of rare earth elements La, Ce, Pr and Nd with ∼28%, 50%, 6% and 16% composition, respectively. All the samples crystallize in orthorhombic structure. Increasing x (Mm), corresponding to decreasing the La-site average ionic radii (〈r_A〉) hence increasing the size mismatch (i.e. variance σ²), results in strong suppression of ferromagnetism (T_C) and the associated metallicity (T_IM). It may be pointed out that Mm (La, Ce, Pr and Nd) substitution has been done to create two effects. First, creation of multivalence of Mn (2+, 3+ and 4+) via Ce substitution and second to create higher degree of disorder due to size difference brought in not only by Ce but also by Pr and Nd. Evidences and arguments based on XPS analysis suggest that multivalent ions La, Mm and Ca, and the resulting presence of Mn²⁺, Mn³⁺ and Mn⁴⁺, causes the simultaneous operation of ferromagnetism-double exchange (Mn²⁺/Mn³⁺ and Mn³⁺/Mn⁴⁺) and antiferromagnetic-superexchange (Mn³⁺/Mn³⁺ and Mn²⁺/Mn²⁺) interaction. In addition, Mm doping also creates inhomogenities at La—as well as Mn—site due to size and valency difference. A curiously huge magnetoresistance as high as ∼63% for x=0.35, under a moderate magnetic field of ∼10 kOe has been observed and even at low magnetic field of ∼3 kOe MR is ∼30%. The competing double exchange and superexchange coupled with inhomogenities are the most likely cause for the occurrence of large ∼63% CMR in the Mm-doped LCMO.