模板晶粒定向生长技术制备(Na0.8K0.2)0.5Bi0.5TiO3无铅压电陶瓷的性能研究

以熔盐法和质子取代法制备的片状Nb2O5粉体为模板晶粒,固相法合成的(Na0.8K0.2)05Bi0.5TiO3 (NKBT)粉体为基料,分别采用固相压制成型(干法)和流延成型(湿法)工艺制备出具有较高取向度的织构化NKBT无铅压电陶瓷,研究了两种成型工艺对NKBT无铅压电陶瓷的显微结构、压电性能和介电性能的影响.结果表明:采用湿法工艺制备的织构陶瓷的各项性能优于干法工艺,采用湿法工艺在1150℃保温5h时,可以获得较高织构度(f=0.66)的NKBT无铅压电陶瓷,并具有优异的压电和介电性能:压电常数d33 =149 pC/N,介电常数ε3T3/ε0=912和平面机电耦合系数kp=29.4;.     

织构化K0.5Na0.5NbO3无铅压电陶瓷的性能研究

以分析纯Na2CO3、Bi2O3和Nb2O5为原料,以NaCl为熔盐,采用二次熔盐法和拓扑化学反应法合成各向异性片状NaNbO3粉体.以该片状NaNbO3粉体为模板品粒,以固相法合成的NaNbO3和KNbO3粉体为基料,采用流延工艺制备出较高取向度的织构化K0.5Na0.5NbO3(KNN)无铅压电陶瓷,系统研究了模板含量、烧结温度和保温时间等工艺参数对织构化KNN陶瓷显微结构和压电性能的影响规律.研究结果表明:随着模板含量的增加,陶瓷的取向度逐渐增加,当模板含量为15 wt;时,陶瓷的取向度可达0.69,当模板含量为10 wt;,1100 ℃下保温5 h烧结,可以获得具有一定织构度(f=0.58)的KNN陶瓷,并表现出优异的压电性能,d33=128 pC/ N.     

流延法制备铌酸钾钠基无铅压电陶瓷的性能研究

通过流延成型技术,以片状K0.5Na0.5NbO3(简称为KNN)粉体为模板,结合掺杂改性后的基料粉体(K0.45Na0.55)0.98Li0.02(Nb0.77Ta0.18Sb0.05)O3-0.005BaZrO3(简称为KNNLST-BZ)流延制备出KNN基无铅压电陶瓷,研究了不同的工艺参数(烧结温度、烧结次数)对于KNNLST-BZ织构化陶瓷的电学性能、显微结构的影响.结果表明:模板含量为20wt;的KNNLST-BZ织构化陶瓷在1145℃下保温2h呈现出优异的性能:压电常数d33=204 pC/N,横向机电耦合系数k31=23;,剩余极化强度Pr=26 μC/cm2,矫顽场Ee=1.2 kV/mm.同时该织构化陶瓷在1145℃下烧结2次能得到更优的电学性能:d33 =248 pC/N,k31=32.54;,Pr=38 μC/cm2,Ec=1.2 kV/mm,介电损耗tanδ=6.38;,机械品质因数Qm=16.76,介电常数εT33/ε0=913.7,横向伸缩振动频率常数N1=2244.     

Nb2O5掺杂对Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3陶瓷组织与性能的影响

采用固相烧结法制备Nb2O5掺杂的Pb(Mg1/3Nb2/3) O3-PbZrO3-PbTiO3+ 0.5mol; ZnO(PMN-PZT)压电陶瓷,研究了不同Nb2O5掺杂量对材料结构及压电介电性能的影响.实验结果表明,随着Nb2O5掺杂量的增加(0～1 mol;),PMN-PZT陶瓷的晶界强度提高,断裂模式由沿晶断裂逐渐转变为穿晶断裂,而且陶瓷的压电介电性能升高.当Nb2O5掺杂量为1mol;时,1250℃烧结的陶瓷样品性能参数为:d33=430 pC/N,Qm=60,kp=0.52,kt=0.38,εr=3620,tanδ=0.017.     

MgO掺杂对PMMN四元系压电陶瓷结构与性能的影响

采用固相烧结法制备添加过量MgO的铌镁-铌锰-锆钛酸铅(PMMN)四元系压电陶瓷材料,研究了不同MgO掺杂量对材料结构及压电介电性能的影响.实验结果表明,适量MgO掺杂,不仅不改变PMMN压电陶瓷的钙钛矿相结构,且能提高合成粉体的晶化程度,降低陶瓷的烧结温度,改善材料的压电介电性能.当MsO掺杂量为0.25;质量分数,1130℃烧结的样品性能参数为:d33=310 pC/N,Qm=1008,kp=0.61,tan δ=0.34;,ε33T/ε0=1494,是一种中温烧结功率型压电陶瓷材料,适用于多层压电变压器,超声马达等器件.     

Ce掺杂对0.9Na0.5Bi2.5Nb2O9-0.1LiNbO3高温无铅压电陶瓷性能的影响

本文采用固相法制备了Ce掺杂的0.9Na0.5Bi2.5Nb2O9-0.1LiNbO3(NBN-LN+ xwt; CeO2)层状高温无铅压电陶瓷;系统地研究了CeO2掺杂对NBN-LN陶瓷的物相、显微结构及电性能的影响;获得的样品均为居里点高于780℃的单一铋层状结构相陶瓷;当CeO2掺杂量x=0.75时,样品具有最佳电性能:d33=28 pC/N,kp=12.11;,tan δ=0.10;,Pr=9.50 μC/cm2;且该组分陶瓷样品在700℃经退极化处理后,其d33仍保持在22 pC/N以上,表明该材料在高温领域下具有良好的应用前景.     

Y2O3掺杂对(Ba0.85Ca0.15)Zr0.1Ti0.896Sm0.004O3无铅压电陶瓷介电弛豫与电性能的影响

采用固相法制备了(Ba0.85Ca0.15)1-xYxZr0.1Ti0.896Sm0.004O3(BCZTS-Yx)无铅压电陶瓷.研究了Y2O3含量对BCZTS-Yx无铅压电陶瓷相结构、压电与介电性能的影响.结果表明:Y3+作为施主掺杂物占据A位.当0.004≤x≤0.006时,陶瓷存在三方相与四方相共存的准同型相界结构.当x=0.006时,陶瓷具有最佳的电性能,分别为d33=384 pC/N,kp=37.2;,εr～6775,tanδ ～ 2.04;.利用Curie-Weiss定律对该实验结果进行拟合,发现x为0.006的样品的介电弛豫特征更为明显.     

CuO掺杂对KNN-LS-BF无铅压电陶瓷性能的影响

采用传统固相合成法和制备工艺,在1040℃制备了{0.996 [0.95( Na0.5 K0.5)NbO3-0.05LiSbO3 ]-0.004FeBiO3}+x mol; CuO(KNN-LS-BF+x mol; CuO)无铅压电陶瓷,研究了CuO掺杂量对陶瓷结构和性能的影响.结果表明,CuO的低温促烧作用明显,微量CuO的掺入并没有改变陶瓷体系的相结构,但对陶瓷的压电和介电性能有明显影响.随CuO掺杂量的增加,陶瓷的d33、kp、εr均是先升高后降低,并在x=0.15时,d33、kp、εr分别达到最大值222 pC/N、0.36、1223.14;Qm也是先升高后降低,不过是在x=0.3时达到了最大值66.02.而tanδ则是先降低,在x=0.45达到最小值2.5;后又开始回升.在x=0.15时,所制备压电陶瓷有最好的综合性能:d33=222pC/N,kp=0.36,εr=1223.14,tanδ=3.3;,Qm =52.27.     

SnO2掺杂对(Ba0.85Ca0.15)(Ti0.9Zr0.1-xSnx)O3无铅压电陶瓷介电弛豫与电性能的影响

采用固相烧结法制备了(Ba0.85Ca0.15)(Ti09Zr0.1-xSnx) O3(BCZTS)无铅压电陶瓷.研究了不同含量SnO2(x=0,0.02,0.04,0.06,0.08)对BCZT无铅压电陶瓷相结构、压电性能、介电性能和铁电性能的影响,并利用XRD、SEM、准静态d33测试仪等表征样品.结果表明,所有样品均为单一钙钛矿结构.当掺杂x=0.02时,(Ba0.ss Ca0.1s)(Ti0.9 Zr0.1-xSnx) O3无铅压电陶瓷材料的综合性能优异:d33 =553 pC/N,kp=49;,εr～ 7474(l kHz),tanδ～1.5; (lkHz),Pr=6.06 μC/cm2,Ec=2 kV/cm,利用Curie-Weiss定律对该实验结果进行拟合,发现x=0.02的样品的介电弛豫特征更为明显.     

(1-x)(K0.49Na0.51)(Nb0.97Ta0.03)O3-xBi0.5Na0.5ZrO3无铅压电陶瓷的结构与电性能研究

采用固相法制备了(1-x)(K0.49Na0.51)(Nb0.97 Ta0.03) O3-xBi0.5 Na0.5 ZrO3(KNNT-BNZ,x=0,0.01,0.02,0.03,0.04,0.05)无铅压电陶瓷,研究了Bi0.5 Na0.5ZrO3 (BNZ)的掺杂量对KNNT-BNZ陶瓷相结构、微观结构和电性能的影响.结果表明:KNNT-BNZ陶瓷具有纯的钙钛矿结构,随着BNZ掺杂量x的增加,陶瓷从正交相转变为四方相,并在0.03≤x≤0.04出现正交-四方两相共存的多型相转变区域.在该多型相转变区域靠近四方相的边界x =0.04处,陶瓷具有优异的电性能:压电常数d33 =317 pC/N,机电耦合系数kP=36.4;,机械品质因数Qm=68,介电常数ε3T/ε0=1225,介电损耗tanδ =3.1;,剩余极化强度Pr=20.5 μC/cm2,矫顽场Ec=1.16 kV/mm,居里温度Tc=310℃.     

溶胶-凝胶法制备Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3体系无铅压电陶瓷的研究

采用溶胶-凝胶法制备(1-x)Na0.5Bi0.5 TiO3-xK0.5Bi0.5TiO3体系无铅压电陶瓷.XRD分析表明,用溶胶-凝胶法可以在650℃下合成具有钙钛矿结构的(1-x)Na0.5Bi0.5TiO3-xK0.5Bi0.5TiO3粉体,且在x=0.18～0.30之间存在三方-四方准同型相界(MPB).陶瓷的压电性能参数表明,该体系在MPB组成范围内具有最佳的压电性能:x=0.30时,压电常数d33达到最大值(d33=150 Pc·N-1),平面机电耦合系数kp与介电常数εH33T/ε0均在x=0.26时达到最大值,分别为36.7;和1107.     

Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS_0.5Se_0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×10¹⁷ and 4.1×10¹⁶ cm^‐3, respectively, and an electron effective mass of 0.41 m₀. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.     

Direct preparation of K0.5Na0.5NbO3 powders

K_0.5Na_0.5NbO₃ powders have been directly synthesized by an alternative solid–state method. Stoichimometric mixture of ammonium niobium oxalate and C₄H₄O₆KNa·4H₂O were calcined in temperature range from 500 to 800 °C for 3 h. The precursor and calcination products were characterized with respect to stoichiometry, purity, crystalline structure, particle size and powder morphology using X–ray diffraction (XRD), X‐ray fluorescence (XRF) spectrometer, scanning electron microscope (SEM), Fourier transform infrared (FTIR) spectra, thermogravimetric (TG) analysis, differential scanning calorimetry (DSC) and UV–Vis diffuse reflectance (UV–Vis) spectroscopy. XRD and XRF results reveal that stoichiometric K_0.5Na_0.5NbO₃ powders could be synthesized by the method. The particle size is about 68 nm for the precursor calcined at 500 °C according to XRD data, which is in good agreement with SEM data. The average band gap energy is estimated to be 3.18 eV by UV–vis diffuse reflectance spectra. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural analysis of amorphous Ge0.5Te0.5 by neutron diffraction

Neutron diffraction measurements have been made on a sputtered sample of amorphous Ge_0.5Te_0.5. Analysis of the radial distribution function derived from Fourier inversion of the measured structure factor gives a nearest neighbor coordination number n = 2.49. This result, compared with coordination models proposed for this composition, favors the chemically ordered 3t2-3 model (where each Ge and Te atom is threefold coordinated by the other one) analogous to a-As with n = 2.78 over the 4-2 models with n > 3.20. More detailed analysis including second neighbor atoms confirms the ordered threefold a-As model.     

Bi(Zn0.5Ti0.5)O3对Bi0.5Na0.5TiO3基陶瓷相结构及弛豫性的影响

采用固相反应合成法制备了(1-x)(0.96Bi0.5Na0.5TiO3-0.04BaTiO3)-xBi(Zn0.5 Ti0.5)O3陶瓷(x≤0.10).通过X射线衍射,介电温度谱等对该体系陶瓷的相结构及弛豫特性进行了研究.结果发现,该陶瓷在Bi(Zn0.5Ti05)O3加入量低于0.05时呈现纯钙钛矿结构.此外,随着Bi(Zn0.5Ti0.5)O3加入量的增加,其相结构由三方-四方共存向赝立方结构转变;同时,陶瓷的弥散因子上升,偶极子取向冻结活化能下降,表明BZT的加入明显地增加了0.96Bi0.5Na0.5TiO3-0.04 BaTiO3陶瓷的弛豫性.     

(Na0.5Bi0.5)TiO3-(K0.5Bi0.5)TiO3无铅铁电单晶的生长、结构与介电特性

采用高温自助熔剂法制备了(Na0.5Bi0.5) TiO3-(K0.5Bi0.5) TiO3(简称:NBT-KBT)无铅铁电单晶,晶体尺寸为5mm×6 mm×1 mm.利用X射线衍射(XRD)手段研究了NBT-KBT单晶的相结构,结果表明晶体样品为钙钛矿四方相结构.Raman散射结果也表明了NBT-KBT单晶的拉曼振动模式具有四方相结构特征.利用扫描电镜(SEM)和透射电镜(TEM)研究了单晶的表面形貌和微结构特征.另外,单晶介电常数随温度以及频率的变化关系显示单晶具有弛豫铁电体特性.     

Neutron and X-ray diffraction study of superstructure and localized magnetic moments in Cu0.5Fe0.5Cr2S4 and Cu0.5In0.5Cr2S4 compounds

The superstructure parameters for the Cu_0.5Fe_0.5Cr₂S₄ and Cu_0.5In_0.5Cr₂S₄ compounds have been determined by neutron and X-ray diffraction. The localized magnetic moments in different sublattices measured for Cu_0.5Fe_0.5Cr₂S₄ are equal to 3.06 ± 0.17 μB for Fe³⁺ ions in the A-site and 2.76 ± 0.22 μB for Cr³⁺ ions in the B-site (Cu⁺ possess no magnetic moment), which are much less than the magnetic moments for the ions in the purely ionic state.     

Structural study of the semimagnetic semiconductor Zn0.5Mn0.5In2Te4

The semimagnetic semiconductor alloy Zn_0.5Mn_0.5In₂Te₄ was refined from an X‐ray powder diffraction pattern using the Rietveld method. This compound crystallizes in the space group I42m (Nº 121), Z = 2, with unit cell parameters a = 6.1738(1) Å, c = 12.3572(4) Å, V = 471.00(2) Å3, c / a = 2.00. This material crystallizes in a stannite‐type structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Gravitational Effects on Mixing and Growth Morphology of an In0.5Ga0.5 System

A mixing experiment of multicomponents melts was performed using a uniform temperature furnace in the Second International Microgravity Laboratories (IML-2) mission. Growth morphologies and Ga concentration profiles were analyzed for the samples with the compositional ratio of 0.5 In–0.5 Ga–1.0 Sb grown under microgravity and on earth. The sample with free surface grown under microgravity was nearly spherical in shape, except some parts with projections. Ga was dispersed homogeneously in the bulk because the mixing was enhanced by Marangoni convection due to the concentration gradient. On the other hand, the sample grown on earth was a double cylindrical shape with different diameters, and Ga concentration decreased from top to bottom, showing clearly the effect of gravity. Many needle crystals were formed in both space and earth samples due to rapid cooling. The average size of the needle crystals grown in space was larger than that of the earth sample.