Origin of the blueshift in the infrared absorbance of intersubband transitions in N/GaN multiple quantum wells

A self-consistent calculation of the subband energy levels of n-doped quantum wells is studied. A comparison is made between theoretical results and experimental data. In order to account for the deviations between them, the ground-state electron–electron exchange interactions, the ground-state direct Coulomb interactions, the depolarization effect, and the exciton-like effect are considered in the simulations. The agreement between theory and experiment is greatly improved when all these aspects are taken into account. The ground-to-excited-state energy difference increases by 8 meV from its self-consistent value if one considers the depolarization effect and the exciton-like effect only. It appears that the electron–electron exchange interactions account for most of the observed residual blueshift for the infrared intersubband absorbance in Al_xGa_1-xN/GaN multiple quantum wells. It seems that electrons on the surface of the k-space Fermi gas make the main contribution to the electron–electron exchange interactions, while for electrons further inside the Fermi gas it is difficult to exchange their positions.     

Ultra-short laser ablation of dielectrics: Theoretical analysis of threshold damage fluence and ablation depth

A coupled theoretical model based on Fokker–Planck equation for ultra-short laser ablation of dielectrics is proposed. Multiphoton ionization and avalanche ionization are considered as the sources during the generation of free electrons. The impact of the electron distribution in thermodynamic nonequilibrium on relaxation time is taken into account. The calculation formula of ablation depth is deduced based on the law of energy conservation. Numerical calculations are performed for the femtosecond laser ablation of fused silica at 526 and 1053 nm. It shows that the threshold damage fluences and ablation depths resulted from the coupled model are in good agreement with the experimental results; while the damage thresholds resulted from the approximate model significantly differ from the experimental results for lasers of long pulse width. It is concluded that the coupled model can better describe the micro-process of ultra-short laser ablation of dielectrics.     

Synthesis, structural and optical characterization of nanocrystalline ZnS:Cu embedded in silica matrix

The synthesis of Cu doped ZnS nanoparticles inside the pore of an inorganic silica gel matrix is presented. The synthesized nanoparticles were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). X-ray diffraction pattern reveals the crystalline wurtzite phase of ZnS. The existence of silica gel in modeling morphologies of the nanoparticles was characterized using Fourier transform infrared (FTIR) spectrometer. Thickness of the silica shell was also calculated. UV- absorption spectrum shows the appearance of an absorption peak at 273 nm which confirms the blue shift as compared to that of bulk ZnS. The photoluminescence (PL) emission spectrum of the sample showed a broad band in the range 465-510 nm due to the transition from the conduction band edge of ZnS nanocrystals to the acceptor like t₂ state of Cu.     

铝纳米晶的低温导电特性研究

采用真空热压技术将电磁感应加热-自悬浮定向流法制备的铝纳米粉末压制成块体样品.通过X射线衍射、透射电子显微镜、扫描电子显微镜及X射线能谱分析了铝纳米晶的微观结构,并用四探针法测量了不同温度下(8—300 K)样品的电阻率,研究了铝纳米晶的电阻率(ρ)随温度的变化规律.结果表明:由于晶界(非晶氧化铝)对电子的散射以及晶界声子对电子的散射效应,低温(40 K)下,铝纳米晶的本征电阻率随温度变化关系明显不同于粗晶铝,不仅呈现出T~4变化,还表现出显著的T3变化规律.因晶界等缺陷和非晶氧化铝杂质对电子的散射,铝纳米晶残余电阻率比粗晶铝电阻率大5—6个数量级.     

Probability of electron emission in photoemission from doped semiconductor

Electron motion is investigated in a strong-field region —in the region of bending of the band close to the surface of a semiconductor. In this region there is a change in the electron distribution function under the action of the electric field and interaction mechanisms leading to energy loss of the hot electrons. The main characteristics of the external photoeffect are determined by the energy lost by the electron in the region of band bending and the size of the barrier at the semiconductor-vacuum interface. The electron-emission probability from a crystal containing a space-charge region is determined from the solution of the Boltzmann kinetic equation. The energy dependence of the energy scattering length of the hot electrons is taken into account in the calculation. The calculation is made for photoemission from GaAs in conditions when the interaction with polar optical phonons is the most effective energy-scattering mechanism. An expression is obtained for the energy distribution function of the emitted electrons for the case of strong electric fields. The position of the distribution-function maximum depends on the electric field and the effective interaction constant with phonons. The current and quantum yield of the photoeffect are calculated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 81–87, October, 1978.In conclusion, it remains to extend profound thanks to V. L. Bonch-Bruevich for Ms constant interest in the work.     

Thermoelectric properties of nano-granular indium–tin-oxide within modified electron filtering model with chemisorption-type potential barriers

In this work, an approach to the numerical study of the thermoelectric parameters of nanoscale indium tin oxide (ITO, Sn content<10 at%) based on an electron filtering model (EFM) was developed. Potential barriers at grain boundaries were assumed to be responsible for a filtering effect. In the case of the dominant inelastic scattering of electrons, the maximal distance between potential barriers was limited in this modified model. The algorithm for such characteristic length calculation was proposed, and its value was evaluated for ITO. In addition, the contributions of different scattering mechanisms (SMs) in electron transport were examined. It was confirmed that in bulk ITO, the scattering on polar optical phonons (POPs) and ionized impurities dominates, limiting electron transport. In the framework of the filtering model, the basic thermoelectric parameters (i.e., electrical conductivity, mobility, Seebeck coefficient, and power factor (PF)) were calculated for ITO in the temperature range of 100–500 °C as a function of potential barrier height. The results demonstrated a sufficient rise of the Seebeck coefficient with an increase in barrier height and specific behavior of PF. It was found that PF is very sensitive to barrier height, and at its optimal value for granular ITO, it may exceed the PF for bulk ITO by 3–5 times. The PF maximum was achieved by band bending, slightly exceeding Fermi energy. The nature of surface potential barriers in nano-granular ITO with specific grains is due to the oxygen chemisorption effect, and this can be observed despite of the degeneracy of the conduction band (CB). This hypothesis and the corresponding calculations are in good agreement with recent experimental studies [Brinzari et al. Thin Solid Films 552 (2014) 225].     

Synthesis and characterization of ZnO nano/microfibers thin films by catalyst free solution route

Zinc oxide (ZnO) nano/microfibrous thin films were successfully synthesized by a catalyst free solution route on glass and Si substrates. X-ray diffraction study revealed the formation of ZnO nanofibers of hexagonal crystalline structure. The texture coefficient of different planes varied with annealing temperature and that of the (0 0 2) plane was the highest for films annealed at temperature 873 K. Scanning electron micrograph showed the well formation of ZnO nano/microfibers with an average diameter 500 nm and having an average aspect ratio 150. UV–Vis–NIR spectroscopic study for the films deposited on glass substrates showed the high transmittance in the visible and near-infrared region. It was also observed that the band gap energy decreased as the films were annealed at higher temperature. The band gap energies of nanostructured ZnO thin films were determined to be in the range 3.03–3.61 eV. The photoluminescence study showed an UV emission peak at 397 nm, a visible blue–green emission peak at 468 nm and a green emission peak at 495 nm. Field emission properties of nanofiber ZnO thin film showed considerably low turn-on field around 1.4 V/μm. The emission current was as high as 70 μA at the field of 3.6 V/μm.     

An “instantaneous” distribution of the ionization-passive electrons and holes under irradiation of a dielectric by intense electron or laser beams

A method is worked out for calculation of an “instantaneous” energy distribution of the ionization-passive electrons and holes resulting from the electron-electron collisions before the onset of electron-phonon relaxation under 10⁻¹⁵–10⁻¹⁴ s irradiation of a dielectric by an intense electron or laser beam. The method is based on the solution of a system of integral-differential kinetic equations of general form. The Auger and impact ionization as well as hole recoil due to the momentum conservation law are taken into account in calculations. The “instantaneous” distribution is calculated in NaCl under irradiation of the sample by a high-density electron beam. The “instantaneous” distribution of ionization-passive electrons and holes is the initial one in solutions of all kinetic equations describing further relaxation of electron excitations in irradiated materials.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 15–22, November, 2004.     

Inelastic scattering of hot electrons in n-GaAs/AlAs types I and II multiple quantum wells doped with silicon

We have studied the dependence of hot electron scattering rate on temperature in n-GaAs/AlAs types I and II multiple quantum wells. For a sample with well width 37 Å, which is on the borderline between types I and II band alignment, the increase of the temperature in the range 6–80 K leads to the strong decrease of the hot electron scattering rate. We explain this result by ionization of donors and transfer of cold electrons from the Γ-valley of GaAs to the X-valley of AlAs.     

An application of the dust grain charging model to determination of secondary electron spectra

Dust grains – objects of different shapes with a size distribution from micro to nanometers – are generally considered as a part of many space as well as laboratory plasmas. Among various dust charging processes, electron-induced secondary emission plays an important role in plasmas containing a noteworthy portion of high-energy electrons. Since a part of secondary electrons has not the energy high enough to overcome the surface potential barrier, the resulting grain charge is determined not only by the secondary emission yield (related to the grain material and size) but also by the secondary electron spectrum. We have developed a model of secondary electron emission from small dust grains. In the present contribution, we discuss the profile of a secondary emission yield that can be received from the model and the measured equilibrium grain charge, both as functions of an incident electron beam energy. A comparison of these quantities leads to an estimation of secondary electron spectra. We have found that: (1) the energy spectrum of secondary electrons does not change with the energy of primary electrons and (2) the energy spectrum depends on the target material being harder for gold and silver than for glass grains.     

Energy losses and scattering of fast electrons in a dense plasma

This paper describes an algorithm for the calculation of specific energy losses and multiple scattering of fast electrons in a plasma, taking into account the interaction of the electrons of the beam with the bound and free plasma electrons and with the plasma. Results are presented of calculations for aluminum and lead plasmas with density 0.001-1 of normal and with temperature up to 1 keV for initial electron kinetic energy of 1 MeV. The energy-loss distribution in an aluminum plasma is calculated by the Monte-Carlo method.Tomsk Polytechnic University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 112–116, September, 1993.     

石英玻璃中导带电子的光吸收

分别用二阶和三阶微扰理论计算了 １９３ｎｍ 、３５５ｎｍ 激光照射下石英玻璃中导带电子的单光子吸收速率和双光子吸收速率。结果表明,电子空穴散射参与的单光子吸收和声学声子参与的双光子吸收都是材料中导带电子吸收激光能量的重要过程。     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

石英玻璃中导带电子的光吸收

 分别用二阶和三阶微扰理论计算了193nm、355nm激光照射下石英玻璃中导带电子的单光子吸收速率和双光子吸收速率。结果表明,电子空穴散射参与的单光子吸收和声学声子参与的双光子吸收都是材料中导带电子吸收激光能量的重要过程。     

Certain general questions of fast-electron transport II. Kinetic equations and conditions governing the accelerated motion of fast electrons in dielectrics in an electric field

A general kinetic equation for the differential density of fast particles moving in a medium in an external field is derived on the basis of the continuity equation in phase space. An equation is written for the differential flux in the case of fixed target particles. This equation is used to derive equations for fast electrons; account is taken of the coupling of energy-loss and scattering events in an electric field for various particular problems analogous to those studied in the theory of electron transport in the absence of a field. The kinetic equations are used to analyze the conditions governing accelerated motion of electrons in a dielectric in an external electric field in the continuous-deceleration approximation. Account is taken of fluctuations in the energy loss and of multiple scattering. There are two energy ranges of particles moving in a dielectric in which accelerated motion can occur; in the case of an electron beam with a continuous energy spectrum, this acceleration would be accompanied by monochromatization of the beam.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 7–12, February, 1972.     

The exact solutions of Kane equations which have position-dependence band gap in an external non-uniform electric field

The energy spectrum of electrons in narrow band gap semiconductor nanocrystals which have position dependence band gap in an external non-uniform electric field which compensate the position dependence of the band edge of the valence band potential are studied theoretically taking into account the non-parabolicity of electrons in dispersion laws. The exact solutions of the Kane equations with strong spin–orbital interaction are determined with and without magnetic field via the band gap changes as a function of the position. The position dependence of the band gap is taken parabolically.     

Influence of scattering processes on negative magnetoresistance in doped semiconductors

The influence of the processes of scattering of electrons with opposing spins on magnetoresistance in narrow impurity bands is investigated for various different band and temperature values. It is shown that negative magnetoresistance is generated by taking into account the electron-electron scattering.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 62–67, July, 1976.     

Relativistic scattering calculations: On the study of surface magnetism by polarized and unpolarized electrons

A relativistic theory of elastic electron scattering, in which spin-orbit coupling and magnetic exchange interaction are both taken into account, has been applied to crystal atoms of the ferromagnets Ni, Fe and Gd. The spin-orbit- and exchange-induced scattering asymmetries obtained for polarized electrons are in good agreement with results from spin-orbit- only and exchange-only calculations. The residual deviations decrease with increasing energy. Interference effects give rise to sizeable values (up to about 4%) of a left-right scattering asymmetry for unpolarized electrons. This implies the possibility of studying surface ferromagnetism by unpolarized electron scattering.     

Quantum confinement and interface structure of Si nanocrystals of sizes 3–5 nm embedded in a-SiO2

Spectroscopic ellipsometry and Monte Carlo simulations are employed to answer the fundamental question whether the energy gaps of Si nanocrystals with sizes in the range of 3–5 nm, which are embedded in amorphous silica, follow or deviate from the quantum confinement model, and to examine their interfacial structure. It is shown that the optical properties of these nanocrystals are well described by the Forouhi–Bloomer interband model. Analysis of the optical measurements over a photon-energy range of 1.5–5 eV shows that the gap of embedded nanocrystals with a mean size of 3.9 nm follows closely quantum confinement theory. A large band gap expansion (0.65 eV) compared to bulk Si is observed. The Monte Carlo simulations reveal a non-abrupt interface and a large fraction of interface oxygen bonds. This, in conjunction with the experimental observations, indicates that oxygen states and the chemical disorder at the interface have a negligible influence on the optical properties of the material in this size regime.     

Transient magnetoresponse of photoexcited electrons: Negative cyclotron absorption and evolution of Faraday angle

The transient magnetooptical response of electrons with partly inverted initial distribution produced by an ultrashort optical pulse near the optical phonon energy is studied theoretically. Transient cyclotron absorption and Faraday rotation of polarization plane are considered for bulk semiconductors (GaAs, InAs, and InSb) as well as for a GaAs-based quantum well. Damping of the response due to electron momentum relaxation associated with elastic scattering from acoustic phonons is taken into account in calculations, as well as the evolution of the electron distribution due to quasi-elastic energy relaxation at acoustic phonons and effective inelastic transitions accompanied by spontaneous emission of optical phonons. Nonstationary negative absorption in the cyclotron resonance conditions and peculiarities of Faraday rotation of the polarization plane associated with partial inversion of the initial distribution are considered. The possibility of transient enhancement of the probe field under cyclotron resonance conditions is indicated.