Quantum Dot Heterostructures

Optical and Quantum Electronics -     

计及厚度下量子点量子比特的电磁场依赖性

在电子-体纵光学(Longitudinal optical,LO)声子强耦合条件下,采用LLP-Pekar型变分法推导出计及厚度下量子点中极化子的基态和第一激发态能量本征值和本征函数以及平均声子数的电磁场依赖性。在此基础上,以极化子的二能级结构为载体构造了量子点量子比特。数值计算结果表明:量子比特的振荡周期T_0随量子点厚度L的增加而增大,随磁场的回旋频率ωc、电场强度F和电声子耦合强度α的增加而减小。量子比特的概率密度︱Ψ(ρ,z,t)~2︱随电子横向坐标ρ的变化呈现"正态分布"并受到量子盘厚度L和有效半径R_0的强烈影响,随电子纵向坐标z、角坐标φ和时间t作周期性振荡变化。消相干时间τ随磁场的回旋频率ω_c、色散系数η和电子-声子耦合常数α的增加而增大,随电场强度F、量子点厚度L和有效半径R_0的增加而减小。量子点的厚度是量子点量子比特的一个重要参数,理论上可以通过设计不同的量子盘厚度并结合调节外加电磁场的强度,达到调控量子比特振荡周期、消相干时间大小的目的。     

Influences of a Side-Coupled Triple Quantum Dot on Kondo Transport Through a Quantum Dot

Kondo transport properties through a Kondo-type quantum dot (QD) with a side-coupled triple-QD structure are systematically investigated by using the non-equilibrium Green's function method. We firstly derive the formulae of the current, the linear conductance, the transmission coefficient, and the local density of states. Then we carry out the analytical and numerical studies and some universal conductance properties are obtained. It is shown that the number of the conductance valleys is intrinsically determined by the side-coupled QDs and at most equal to the number of the QDs included in theside-coupled structure in the asymmetric limit. In the process of forming the conductance valleys, the side-coupled QD system plays the dominant role while the couplings between the Kondo-type QD and the side-coupled structure play the subsidiary and indispensable roles. To testify the validity of the universal conductance properties, another different kinds of side-coupled triple-QD structures are considered. It should be emphasized that these universal properties are applicable in understanding this kind of systems with arbitrary many-QD side structures.     

Self-assembly Drives Quantum Dot Photoluminescence

Engineering the spectral properties of quantum dots can be achieved by a control of the quantum dots organization on a substrate. Indeed, many applications of quantum dots as LEDs are based on the realization of a 3D architecture of quantum dots. In this contribution, we present a systematic study of the quantum dot organization obtained on different chemically modified substrates. By varying the chemical affinity between the quantum dots and the substrate, the quantum dot organization is strongly modified from the 2D monolayer to the 3D aggregates. Then the photoluminescence of the different obtained samples has been systematically studied and correlated with the quantum dot film organization. We clearly show that the interaction between the substrate and the quantum dot must be stronger than the quantum dot–quantum dot interaction to avoid 3D aggregation and that these organization strongly modified the photoluminescence of the film rather than intrinsic changes of the quantum dot induced by pure surface chemistry.     

The Electron－Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot

The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots are studied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method of numerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the binding energy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupled quantum dot as a function of the dot radius for different vaJues of the distance and the magnetic field strength.     

The Electron-Hole Pair in a Single Quantum Dot and That in a Vertically Coupled Quantum Dot

The energy spectra of low-lying states of an exciton in a single and a vertically coupled quantum dots arestudied under the influence of a perpendicularly applied magnetic field. Calculations are made by using the method ofnumerical diagonalization of the Hamiltonian within the effective-mass approximation. We also calculated the bindingenergy of the ground and the excited states of an exciton in a single quantum dot and that in a vertically coupledquantum dot as a function of the dot radius for different values of the distance and the magnetic field strength.     

无限深势阱下杂质量子点的能级计算

在有效质量近似下,垂直方向采用无限深势阱限制势,在x-y平面上,量子点内采用抛物势近似,在量子点边界处采用与实际情况更接近的无限深势阱.在中心杂质电荷为ηe时,利用波函数近似,得到基态和低激发态的能级,与x-y平面均采用抛物势时得到的能级进行了比较.计算发现在量子点真实半径比较小时,电子的基态和低激发态受其影响很大,而相应的能级随量子点的半径逐步增大.在量子点半径大于5倍有效玻尔半径时,能级受其影响已经变得很弱.并且,随着磁场的变化,量子点半径对基态和第一激发态的能级差的影响也很大.最后我们计算了杂质电子的基态束缚能并讨论了声子对其影响.     

Excitonic absorption in a quantum Dot

The excitonic absorption spectrum of a single quantum dot is investigated theoretically and experimentally. The spectrum is determined by an interacting electron-valence-hole complex. We show that the mixing of quantum configurations by two-body interactions leads to distinct absorption spectra controlled by the number of confined electronic shells. The theoretical results are compared with results of photoluminescence excitation spectroscopy on a series of single self-assembled In0.60Ga0.40As quantum dots.     

磁场和量子点尺寸对方形杂质量子点中电子性质的影响

利用二维有限差分方法,计算了含有H_2~+杂质的方形量子点的基态能和杂质束缚能。讨论了磁场和杂质位置对不同尺寸的量子点中电子基态能量和束缚能的影响,得出了方形量子点系统的量子尺寸效应。     

Triple Quantum Dot Molecule as a Spin-Splitter

We propose a spin-splitter composed of triple quantum dots that works due to the Coulomb blockade effect and the charge and spin biases applied on external electron source and drains. The spin biases are applied only on the two drains and give their spin-dependent chemical potentials, which act as the driving forces for electron spin-polarized transport. By tuning the biases and the dots＇ levels, spin-up and spin-down electrons can be simultaneously split or separated from the source into two different drains. We show that such a tunneling process is detectable in terms of the spin accumulations on the dots or the currents flowing through the external leads. The present device is quite simple and realizable within currently existing technologies.     

Photon-Assisted Conductance Structure for a Quantum Dot

We investigate theoretically the electron transport of a two-level quantum dot irradiated under a weak laser field at low temperatures in the rotating wave approximation. Using the method of the Keldysh equation of motion for nonequilibrium Green function, we examine the conductance for the system with photon polarization perpendicular to the tunnelling current direction. It is demonstrated that by analytic analysing and numerical examples, a feature of conductance peak splitting appears, and the dependence of conductance on the incident laser frequency and self-energy are discussed.     

Charge Reconfiguration in Isolated Quantum Dot Arrays

A high level of tunability and control over arrays of quantum dots are key ingredients toward the goal of scalable‐based qubit architectures. Increasing array size simultaneously increases the parameter space and therefore the tuning complexity. The electron reconfiguration behavior of quantum dot arrays isolated from the electron reservoirs is studied experimentally. Isolating a quantum dot array from the reservoirs does not only enable a high degree of control over the tunnel couplings but at the same time drastically simplifies the stability diagrams for small numbers of electrons trapped in the array. Experimental results on double, triple, and quadruple quantum dot arrays are presented and complementary model calculations allow the identification of all transitions observed in the experiment. Highly tunable long‐range transitions are observed in isolated triple quantum dots and evidence of higher‐order cotunneling is found for the quadruple quantum dot array.     

GaN基量子点结构的喇曼特征

采用量子力学的微扰理论，对GaN基量子点结构的喇曼频移进行分析。在喇曼实验中，观察InGaN／GaN量子点结构的E2和A1(LO)的模式，并发现实验中样品的喇曼频移与GaN的体材料相比，有着明显的红移。     

Programmable Quantum Processor with Quantum Dot Qubits

The realization of controllable couplings between any two qubits and among any multiple qubits is the critical problem in building a programmable quantum processor(PQP). We present a design to implement these types of couplings in a double-dot molecule system, where all the qubits are connected directly with capacitors and the couplings between them are controlled via the voltage on the double-dot molecules. A general interaction Hamiltonian of n qubits is presented, from which we can derive the Hamiltonians for performing operations needed in building a PQP, such as gate operations between arbitrary two qubits and parallel coupling operations for multigroup qubits. The scheme is realizable with current technology.     

Multichannel Electronic Transport Through a Kondo Dot

Electronic transport through the quantum dot with two energy levels is studied by means of the non-equilibrium Green functions and the slave boson method. Special attention is focused on an interplay between quantum inference of traveling waves and electronic correlations. It is shown that if impurity states are far below the Fermi level the transport is through the highest state only. Interference processes become relevant when the levels are shifted towards the mixed valence regime.     

CdSeS量子点的光学非线性特性

以脉冲宽度为35 ps,基频为1064 nm的Nd:YAG锁模激光器二倍频532 nm的激光作激发,利用Z-扫描技术研究了CdSeS量子点的光学非线件特性.实验结果表明CdSeS量子点在532 nm光激发下具有很大的非线性吸收效应,该吸收效应来自于光学三阶效应引起的双光子吸收.在不同的入射光强下观测了CdSeS量子点的Z-扫描曲线,实验表明,CdSeS具有大的非线性折射率1.9×10-8esu和大的双光子吸收截面25283 GM,比现在使用的ZnS量子点高出近2个数量级.     

Electron-Phonon Interaction in an Annular Quantum Dot

The confined longitudinal-optical （LO） phonon and surface-optical （SO） phonon modes of a free-standing annular cylindrical quantum dot are derived within the framework of dielectric continuum approximation. It is found that there exist two types of SO phonon modes： top SO （TSO） mode and side SO（SSO） mode in a cylindrical quantum annulus. Numerical calculation on CdS annulus system has been performed. Results reveal that the two different solutions of SSO mode distribute mainly at the inner or outer surfaces of the annulus. The dispersion relations and the coupling intensions of phonons in a quantum annulus are compared with those in a cylindrical quantum dot. It is found that the dispersion relations of the two different structures are similar, but the coupling intension of the phonon-electron interaction in quantum annulus is larger than that in quantum dot. The Hamiltonians describing the free phonon modes and their interactions with electrons in the system are also derived.     

A Polaron in a Quantum Dot Quantum Well

The polaron effect in a quantum dot quantum well (QDQW)system is investigated by using the perturbation method. Both the bound electron states outside and inside the shell well are taken into account . Numerical calculation on the CdS/HgS QDQW shows that the phonon correction to the electron ground state energy is quite significant and cannot be neglected.     

非对称量子点中极化子的性质

采用线性组合算符和幺正变换方法研究了非对称量子点中强、弱耦合极化子的性质,导出了非对称量子点中强、弱耦合极化子的基态能量和基态结合能随量子点的横向、纵向有效受限长度,电子-声子耦合强度的变化关系.通过数值计算,结果表明,量子点中强、弱耦合极化子的基态能量和基态结合能随量子点的横向、纵向有效受限长度的减小而迅速增大.     

Chaos in a Quantum Dot with Spin-Orbit Coupling

Level statistics and nodal point distribution in a rectangular semiconductor quantum dot are studied for different degrees of spin-orbit coupling. The chaotic features occurring from the spin-orbit coupling have no classical counterpart. Using experimental values for GaSb/InAs/GaSb semiconductor quantum wells we find that level repulsion can lead to the semi-Poisson distribution for nearest level separations. Nodal lines and nodal points are also investigated. Comparison is made with nodal point distributions for fully chaotic states.