RF discharge slab CO laser operating in both fundamental and first-overtone bands

A compact sealed-off cryogenically cooled radio frequency (RF) discharge slab CO laser, operating in both first-overtone (FO) and fundamental band (FB), was launched. Repetitively pulsed and CW modes of RF discharge excitation were studied. Average FB output power was up to 12 W, with laser efficiency 14%. The multiline FB laser spectrum was observed within the wavelength range ∼5.1-5.4 μm. An optical scheme “frequency selective master oscillator - laser amplifier” was applied for getting FB tuning. Single line FB lasing with average power up to several tens of mW was observed on ∼100 FB vibrational-rotational transitions of CO molecule within the spectral range ∼5.0-6.5 μm. Multiline FO lasing was observed on ∼80 spectral lines within the spectral range ∼2.5-4.0 μm, with maximum single line average output power 12 mW. Total output power of the slab FO CO laser came up to 0.3 W, with maximum laser efficiency 0.5%. Results of parametric studies of the FB and FO slab CO laser including complicated time behavior for laser pulses on different FO vibrational-rotational transitions are discussed.     

Silicon donor and Stokes terahertz lasers

Two types of lasers based on hydrogen-like impurity-related transitions in bulk silicon operate at frequencies between 1 and 7 THz (wavelength range of 50-230 μm). These lasers operate under mid-infrared optical pumping of n-doped silicon crystals at low temperatures (<30 K). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized in the first type of terahertz silicon lasers. These lasers have a gain ∼1-3 cm⁻¹ above the laser thresholds (>1 kW cm⁻²) and provide 10 ps-1 μs pulses with a few mW output power on discrete lines. Raman-type Stokes stimulated emission in the range 4.6-5.8 THz has been observed from silicon crystals doped by antimony and phosphorus donors when optically excited by radiation from a tunable infrared free electron laser. The scattering occurs on the 1s(E)→1s(A₁) donor electronic transition accompanied by an emission of the intervalley transverse acoustic g-phonon. The Stokes lasing has a peak power of a few tenths of a mW and a pulse width of a few ns. The Raman optical gain is about 7.4 cm GW⁻¹ and the optical threshold intensity is ∼100 kW cm⁻².     

Specialty Yb fiber amplifier for microchip Nd laser: Towards ∼1-mJ/1-ns output at kHz-range repetition rate

We demonstrate and optimize, for a mJ/ns release at the wavelength 1.064 μm, the operation of a compact laser system designed in the form of a hybrid, active-passive, Q-switched Nd³⁺:YAG/Cr⁴⁺:YAG microchip laser seeding an Yb-doped specialty multi-port fiber amplifier. As the result of the amplifier optimization, ∼1 mJ, ∼1 ns, almost single-mode pulses at a 1-10-kHz repetition rate are achieved, given by a gain factor of ∼19 dB for an 11-μJ input from the microchip laser. Meanwhile, a lower pulse energy, ∼120 μJ, but a much higher gain (∼25 dB) are eligible for the less powerful (0.35 μJ) input pulses.     

Deep ultraviolet femtosecond laser tuning of fiber Bragg gratings

A deep ultraviolet femtosecond laser operating at wavelength 258 nm was demonstrated to be effective in trimming fiber Bragg gratings in telecommunication fibers. A smooth tunable resonance wavelength shift of up to 0.52 nm has been observed, corresponding to a refractive index change of ∼5 × 10⁻⁴ after an accumulated laser fluence of 63.3 kJ/cm² at a single pulse fluence of 124 mJ/cm². The ultrafast laser enhancement of ultraviolet photosensitivity response and modification of anisotropic index profile in silica fiber is a powerful technique to precise control of the performance of fiber Bragg grating devices for applications in optical filtering and polarization mode dispersion management.     

Writing low-loss waveguides in borosilicate (BK7) glass with a low-repetition-rate femtosecond laser

Borosilicate glass (BK7) is a widely-used material in integrated optics devices and in the optical communications industry. We report on laser-written waveguiding in BK7 glass using a low-repetition-rate (1 kHz) laser producing 40 fs pulses of 800 nm light. A 500 μm slit is used to write structures 100 μm below the glass surface. These waveguides show strong guidance at 635 nm, with an index contrast of 3 × 10^− 4 and a propagation loss of ~ 0.5 dB/cm. We measured the change in refractive index for a range of writing conditions as quantified in terms of energy dose; there is an energy dose window (> 0.6 μJ μm^− 3 and < 1.5 μJ μm^− 3) within which the written structures show guidance.     

Highly birefrigent photonic crystal fiber with high negative dispersion for broadband dispersion compensation

In this paper, we proposed a dual-enhanced core photonic crystal fiber (PCF) with high birefringence and ultra-high negative dispersion for dispersion compensation in a polarization maintained optical system. Using finite difference time domain (FDTD) method, we presented dispersion compensating PCF (DC-PCF) with negative dispersion between −1650 ps nm⁻¹ km⁻¹ and −2305 ps nm⁻¹ km⁻¹ in C-band and particularly −2108 ps nm⁻¹ km⁻¹ in λ = 1.55 μm wavelength. By this method, we can compensate dispersion in 124 km long span of a conventional single mode fiber (SMF) by 1 km-long of the DC-PCF at λ = 1.55 μm wavelength. Moreover, fundamental mode of the proposed PCF can induce birefringence about 3.5 × 10⁻³ at 1.55 μm wavelength.     

Widely phase-matched tunable difference-frequency generation in periodically poled LiNbO3 crystal

We report on the development of a laser source in the mid-infrared spectral region based on difference-frequency generation (DFG) in a periodically poled LiNbO₃ (PPLN) crystal. Continuously tunable coherent radiation from 2.75 to 4.78 μm was produced by optical parametric interaction between a diode-pumped monolithic continuous-wave (CW) Nd:YAG laser operating at 1.064 μm and a CW Ti:Sapphire laser tunable from 767 to 871 nm. Temperature-dependent quasi-phase-matched DFG wavelength acceptance bandwidth was studied and characterized. An empiric formula is given to estimate the phase-matched wavelength acceptance bandwidth as a function of the crystal temperature at Λ = 22.5 μm. A large frequency scan of 128 cm⁻¹ (about 78 cm⁻¹ above 1 μW) near 4.2 μm was achieved. The whole absorption spectrum of the P and R branches of the ν₃ band of atmospheric carbon dioxide has been recorded with a single phase-matched frequency scan.     

Widely tunable optical parametric oscillator driven by a pulsed diode-pumped nonlinear-mirror mode-locked Nd:YAG laser

We report on the development of a pulsed diode end-pumped Nd:YAG laser mode-locked by a nonlinear mirror and stabilized by an acousto-optical modulator. With the introduction of appropriate intracavity loss, the laser is able to generate 22.8 ps pulses with the energy of 4.5 μJ. After amplification and frequency doubling stages, the second harmonic radiation is used to non-collinearly synchronously pump a β-barium borate optical parametric oscillator in a walk-off compensated scheme. The system demonstrates a wide-tuning range from 635 nm to 2.55 μm for the signal output, with maximum average conversion efficiency as high as 42%.     

Long range surface plasmon polariton waveguides at 1.31 and 1.55 μm wavelengths

We investigate characteristics of gold metal strip waveguides based on long range surface plasmon polaritons (LRSPPs) along thin metal strips embedded in a polymer for practical applications at the telecommunication wavelengths of 1.31 and 1.55 μm. Guiding properties of the gold strip waveguides are theoretically and experimentally evaluated with the limited thickness and width up to ∼20 nm and ∼10 μm, respectively. The lowest propagation loss of ∼1.4 dB/cm is obtained with a 14.5-nm-thick and 2-μm-wide gold strip at 1.55 μm. With a single-mode fiber, the lowest coupling loss of ∼0.4 dB/facet is achieved with a 14.5-nm-thick and 5-μm-wide gold strip at 1.55 μm. The lowest insertion losses are obtained 8-9 dB with 1.5 cm-long gold strips of a limited thickness and width at both the wavelengths. We demonstrate a 10 Gbps optical signal transmission via the LRSPP waveguide with a 14 nm-thick, 2.5 μm-wide, and 4 cm-long gold strip. These LRSPP waveguides have potential applications for optical interconnects and communications.     

A novel dispersion-shifted single mode optical fiber design with ultra-high-bit-rate and very low loss for long-haul communications

In this paper, a novel dispersion-shifted multi-clad optical fiber with very small bending loss and ultra-high bit-rate applicable for large capacity information transmission systems is presented. To decrease dispersion and higher-order dispersion effects at λ = 1.55 μm, a weighted pulse broadening factor and genetic algorithm (GA) optimization technique is used. Compared to the works reported previously, this method can precisely set the zero-dispersion wavelength. This kind of dispersion-shifted fibers has dispersion, dispersion slope, mode field diameter (MFD), effective area and quality factor within −1.40 × 10⁻⁴ to −8.44 × 10⁻² ps/km nm, 3.06 × 10⁻² to −4.07 × 10⁻² ps/km nm², 5.56−5.85 μm, 119.25−176.42 μm² and 3.49-5.27 at λ = 1.55 μm, respectively. Besides, by applying dispersion at λ = 1.55 μm as the cost function, dispersion of about 1.31 × 10⁻⁸ ps/km nm is obtained. Thus, this novel optical fiber can be used in long-haul high information-transmission capacity communication systems.     

Near-infrared emissions and quantum efficiencies in Tm-doped heavy metal gallate glasses for S- and U-band amplifiers and 1.8 μm infrared laser

Intense 1.8 μm and efficient 1.48 μm infrared emissions have been recorded in Tm³⁺-doped alkali-barium-bismuth-gallate (LKBBG) glasses with low phonon energies under the excitation of 792 nm diode laser. The maximum emission cross-sections for 1.8 and 1.48 μm emission bands are derived to be 6.26×10⁻²¹ and 3.34×10⁻²¹ cm², respectively, and the peak values are much higher than those in Tm³⁺-doped ZBLAN glass. In low-concentration doping, the full-widths at half-maximum (FWHMs) of the two emission bands are 223 and 122 nm, and the quantum efficiencies of the ³F₄ and ³H₄ levels are proved to be ∼100% and 86%, respectively. When the doping concentration increases to 1 wt%, the quantum efficiency of the ³H₄ level is reduced to 60% due to the cross-relaxation processes in high-concentration doping. Efficient 1.8 μm infrared emission in Er³⁺/Tm³⁺-codoped LKBBG glass has also been achieved under the excitation of 970 nm diode laser, and the probability and the efficiency of non-radiative energy transfer from Er³⁺ to Tm³⁺ are as high as 354 s⁻¹ and 58.4%, respectively. Efficient and broad 1.8 and 1.48 μm infrared emission bands indicate that Tm³⁺-doped LKBBG glasses are suitable materials in developing S- and U-band amplifiers and 1.8 μm infrared laser.     

Chemical etching to dissolve dislocation cores in multicrystalline silicon

Multicrystalline silicon wafers are used for approximately half of all solar cells produced at present. These wafers typically have dislocation densities of up to ∼10⁶ cm⁻². Dislocations and associated impurities act as strong recombination centres for electron–hole pairs and are one of the major limiting factors in multicrystalline silicon substrate performance. In this work we have explored the possibility of using chemical methods to etch out the cores of dislocations from mc-Si wafers. We aim to maximise the aspect ratio of the depth of the etched structure to its diameter. We first investigate the Secco etch (1K₂Cr₂O₇ (0.15 M): 2HF (49%)) as a function of time and temperature. This etch removes material from dislocation cores much faster than grain boundaries or the bulk, and produces tubular holes at dislocations. Aspect ratios of up to ∼7:1 are achieved for ∼15 μm deep tubes. The aspect ratio decreases with tube depth and for ∼40 μm deep tubes is just ∼2:1, which is not suitable for use in bulk multicrystalline silicon photovoltaics. We have also investigated a range of etches based on weaker oxidising agents. An etch comprising 1I₂ (0.01 M): 2HF (49%) attacked dislocation cores, but its etching behaviour was extremely slow (<0.1 μm/h) and the pits produced had a low aspect ratio (<2:1).     

Control of nucleation site density of GaN nanowires

The control of nucleation site size and density for Au catalyst-driven growth of GaN nanowires is reported. By using initial Au film thicknesses of 15-50 Å we have shown that annealing between 300 and 900 °C creates Au cluster size in the range 30-100 nm diameter with a cluster density from 300 to 3500 μm⁻².Conventional optical lithography to create parallel Au stripes shoes that a minimum separation of ∼15 μm is needed to avoid overlap of wires onto neighboring lines with our growth conditions that yield wires of this same length. The GaN nanowires exhibit strong band-edge photoluminescence and total resistances of 1.2 × 10⁸-5.5 × 10⁶ Ω in the temperature range from 240 to 400 K, as determined for the temperature-dependent current-voltage characteristics.     

Practical optical frequency measurement system around 1.5 μm based on an acetylene-stabilized laser-locked optical frequency comb

We have developed a practical and precise frequency measurement system at 1.5 μm telecommunication band. An electro-optic-modulator based optical frequency comb is phase-locked to a dither-free acetylene-stabilized laser to realize an optical frequency comb with frequency uncertainty of 10 kHz (5 × 10⁻¹¹) and the linewidth of 15 kHz. The present frequency comb can be also used as an optical frequency reference grid defined by ITU-T (International Telecommunication Union, Telecommunication Standardization Sector). Using the present frequency measurement system, we have demonstrated the first optical frequency measurement of ¹²C¹⁶O overtone absorption lines around 1.56 μm with the uncertainty of lower than 900 kHz.     

Designing of endlessly single mode polarization maintaining highly birefringent nonlinear micro-structure fiber at telecommunication window by FV-FEM

An endlessly single mode highly polarization maintaining nonlinear microstructure fiber at telecommunication window is reported via full-vector finite element method. By taking three ring hexagonal PCF with suitable fiber parameter such as air hole diameter in cladding region d = 0.8 μm, pitch 2.3 μm and introducing four symmetrical large air holes near core region d′ = 2 μm, single mode (V_eff ≤ π), small effective mode area 2.7 μm², nonlinear co-efficient 44.39 W⁻¹ km⁻¹, high phase birefringence of the order of 10⁻³ and group birefringence of the order of 10⁻⁴ with beat length 0.3 μm at wavelength 1.55 μm are achieved.     

Indium zinc oxide thin films deposited by sputtering at room temperature

The deposition of amorphous indium zinc oxide (IZO) thin films on glass substrates with n-type carrier concentrations between 10¹⁴ and 3 × 10²⁰ cm⁻³ by sputtering from single targets near room temperature was investigated as a function of power and process pressure. The resistivity of the films with In/Zn of ∼0.7 could be controlled between 5 × 10⁻³ and 10⁴ Ω cm by varying the power during deposition. The corresponding electron mobilities were 4-18 cm² V⁻¹ s⁻¹.The surface root-mean-square roughness was <1 nm under all conditions for film thicknesses of 200 nm. Thin film transistors with 1 μm gate length were fabricated on these IZO layers, showing enhancement mode operation with good pitch-off characteristics, threshold voltage 2.5 V and a maximum transconductance of 6 mS/mm. These films look promising for transparent thin film transistor applications.     

Study of uranium isotope separation using CO2 laser and CO laser

First, the kinetic investigation of UF₆ + HCl reaction and the isotopic selectivity under CO laser irradiation is performed. On this investigation, the kinetics of UF₆ + HCl reaction by using an intracativity CO laser and CO₂ laser irradiation system, and the isotopic selectivity for this process are studied theoretically. It is found that under the resonant CO laser and CO₂ laser irradiations, the laser-catalyzed reaction rate can increase, and a good selectivity can be achieved. The uranium isotope separation factors β calculated are about 2.44 ∼ 4.05 at laser intensity 50 ∼ 100 W cm⁻² and temperature 235 K.     

Ultrafast mode switching based on a micro-ring laser

Injection locking and multi-mode switching characteristics of a semiconductor ring laser with the radius of 10 μm are investigated based on a nonlinear time domain multimode rate-equation model. The stable injection locking regions for different target modes are studied as the function of detuning frequency and injection power ratio. The results show that ultra-wide detuning range of ∼100 GHz wide at 5 dB injection power ratio and ultra-low switching power ratio of −27 dB can be realized for this micro-ring laser device. Optimal detuning value and high injection power lead to the minimal switching time. An ultrafast response time of 10 ps indicates that a 10 μm-radius SRL can be utilized for ultrafast all-optical scenarios and high-speed tunable lasers.     

Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd:YAG laser pulses

A study of silicon modification induced by a high intensity picosecond Nd:YAG laser, emitting at 1064 nm, is presented. It is shown that laser intensities in the range of 5 × 10¹⁰-0.7 × 10¹² W cm⁻² drastically modified the silicon surface. The main modifications and effects can be considered as the appearance of a crater, hydrodynamic/deposition features, plasma, etc. The highest intensity of ∼0.7 × 10¹² W cm⁻² leads to the burning through a 500 μm thick sample. At these intensities, the surface morphology exhibits the transpiring of the explosive boiling/phase explosion (EB) in the interaction area. The picosecond Nd:YAG laser-silicon interaction was typically accompanied by massive ejection of target material in the surrounding environment. The threshold for the explosive boiling/phase explosion (TEB) was estimated to be in the interval 1.0 × 10¹⁰ W cm⁻² < TEB ≤ 3.8 × 10¹⁰ W cm⁻².     

Infrared and far-infrared spectroscopy of CH3OH: TeraHertz laser lines and assignments

We use a ¹³CO₂ laser as optical pumping source to search for new THz laser lines generated from ¹³CH₃OH. Nineteen new THz laser lines (also identified as far-infrared, FIR) ranging from 42.3 μm (7.1 THz) to 717.7 μm (0.42 THz) are reported. They are characterized in wavelength, offset, relative polarization, relative intensity, and optimum working pressure. We have assigned eight laser lines to specific rotational energy levels in the excited state associated with the C-O stretching mode.