Carbon nanotube–polymer composites for photonic devices

We report the fabrication of high optical quality single wall carbon nanotube polyvinyl alcohol composites and their application in nanotube based photonic devices. These show a broad absorption of semiconductor tubes centred at 1.55 μm, the spectral range of interest for optical communications. The films are used as mode-lockers in an erbium doped fibre laser, achieving 700 fs mode-locked pulses. Raman spectroscopy shows no damage after a long time continuous laser operation.     

Frequency-stabilized seed laser system for dial applications around 0.94 μm

Absolute frequency stabilization of an extended-cavity diode laser at 0.94 μm is reported. The diode laser was frequency locked against rovibrational absorption lines of water vapour by using the frequency modulation spectroscopy technique. The stabilized oscillator shows a short-term frequency stability level of 40 kHz for integration times of 1 s and a long-term frequency drift lower than 10 MHz for observation times longer than 10³ s. The frequency-stabilized oscillator system is mounted on a compact breadboard (75 cm×50 cm) and constitutes the seed laser system for the injection of a high-energy DIAL laser transmitter operating in the 0.94-μm spectral region.     

Compact 120 TW Ti:sapphire laser system with a high gain final amplifier

A 120 TW/36 fs laser system based on Ti:sapphire chirped-pulse amplification (CPA) has been successfully established in our lab. The final four pass Ti:sapphire amplifier pumped by an energetic single-shot Nd:YAG—Nd:glass laser was designed and optimized. With 24 J/8 ns pump energy at 532 nm, 300 mJ/220 ps chirped pulse was amplified to 5.98 J in this amplifier, and a total saturated gain of 20 was achieved. The focused intensity of compressed beam could reach to 10²⁰ W/cm² with the M² of 2.0.     

Electrical and optical characteristics of various PPV derivatives (MEH-PPV, CzEH-PPV, OxdEH-PPV)

To investigate the electrical characteristics of polymer based light emitting diode (LED) devices, we fabricated the hole transport device (HTD) and the electron transport device (ETD). The ITO and Au with high work function were used as electrodes for the HTD, and the Al and Li:Al with low work function were used for the ETD. The active layer materials were poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-(N-carbazolyl)-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (CzEH-PPV), and poly[2-(4-tert-butylphenyl)-5-phenyl-1,3,4-oxadiazole-5(2-ethylhexoxy)-1,4-phenylene vinylene] (OxdEH-PPV). We measured the current density–applied field (J–E) characteristics of the HTD and ETD with various thickness at different temperatures. The results of the J–E curves were analyzed by using tunneling model, space charge limited conduction (SCLC) model, etc. In the SCLC model, the mobility of the hole and the electron of MEH-PPV is 10⁻⁶ and 10⁻⁸ cm²/Vs, respectively. For CzEH-PPV and OxdEH-PPV, the hole mobility is similar to the value of the electron mobility with 10⁻¹⁰ cm²/Vs. The luminescent efficiency of CzEH-PPV or OxdEH-PPV is higher than that of MEH-PPV. The results of photoconductivity of the systems qualitatively agrees with the result of the electrical measurement. We analyze that the balance of the electron and the hole mobility plays an important role for the efficiency of the LEDs.     

Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition

Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P₂O₅-doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Ω cm, a Hall mobility of μ_n0.5 cm² V ⁻¹ s⁻¹ and a carrier concentration of n3×10¹⁷ cm⁻³ at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K.     

Modification of photonic properties in porphyrin-infiltrated opal crystals

Structural, optical and magnetic properties of porphyrin-infiltrated opal hybrid structures were investigated. Bulk samples of synthetic opal were grown by sedimentation technique from colloidal solution of SiO₂ spheres of diameter 250 nm. The structure of the samples was examined by atomic force microscopy. The photonic properties of crystals were investigated by optical measurements in transmission and reflection modes. The stop band was observed in the region 510–550 nm. The photonic properties of synthetic opal crystals were modified by infiltration with aqueous basic solution of iron–porphyrin (FeTPPS) of concentration 1.0 mM. In hybrid samples the absorption bands typical of FeTPPS were observed in the vicinity of the opal stop band. Magnetic properties of FeTPPS-infiltrated opal samples have been studied at 5–300 K in magnetic fields up to 5 T. The FeTPPS-infiltrated opal crystals can be considered as the structures perspective for magnetophotonic devices.     

Self-assembled nanostructures via electrospraying

A concentrated nanoparticulate-based ethylene glycol suspension was prepared and electrosprayed at optimum and stable cone-jet mode conditions. Using laser spectroscopy, the droplets were measured and found to range within 0.23–3.8 μm. In parallel to spectroscopy-assisted sizing, a volume equivalence route for estimating droplet sizes was carried out by measuring contact angles and diameters of the deposits. The electrosprayed nanosuspension relics were examined using optical and transmission electron microscopy. These deposits were further characterized using energy-dispersive X-rays and selected area electron diffraction. Simultaneously deposits were formed by a controlled route through needle deposition without the presence of an electric field. The structures formed in this non-electric field driven route are compared with those formed with electric fields. Thus, elucidating electrosprays as a competing nanofabrication route for forming self-assemblies with a wide range of nanomaterials in the nanoscale for top-down based bottom-up assembly of structures.     

Vertical electron transport study in GaN/AlN/GaN heterostructures

In this work, we investigate the electronic structure and vertical electron transport through GaN/AlN/GaN single-barrier structures with different AlN thickness, grown by plasma-assisted molecular beam epitaxy. Conductive and capacitive characterization has been performed, and the experimental results are interpreted by comparison with 1D self-consistent simulations. Capacitive measurements reveal a complete depletion of the top GaN layer, and the formation of a two-dimensional electron gas at the bottom interface of the AlN barrier, even for barrier thicknesses of 0.5 nm (2 monolayers of AlN). Conductive atomic force microscopy reveals discrete leakage current locations with a density of 10⁷ cm⁻², more than one order of magnitude lower than the dislocation density in these samples. These results are promising for the fabrication of resonant tunnelling diodes using the GaN/AlN material system.     

Neutron polarization analysis on the multiferroic TbMn2O5

Polycrystalline TbMn₂O₅ was prepared by the standard solid-state reaction method and characterized by powder X-ray diffraction and magnetization to assure it is of single phase. Heat capacity measurements on the compound reveal an antiferromagnetic phase transition at 45 K. A broad peak below 6 K in the heat capacity measurements corresponds to the crossover transition of Tb³⁺ ordering. To confirm these magnetic orderings, neutron powder diffractions on TbMn₂O₅ with XYZ neutron polarization analysis were performed at the diffuse neutron scattering (DNS) spectrometer, FRJ-II, by using neutron wavelength of 4.8 Å in the temperature range of 1.8–250 K. Magnetic scattering was separated from nuclear coherent and spin incoherent scattering contributions. Long-range ordered magnetic peaks were observed below 39 K which is consistent with the heat capacity results. The drastic increasing intensities below 6 K indicate the ferromagnetic transition in Tb³⁺ orderings.     

Structure and properties of the one-dimensional cobalt oxide CaCo2O4

We have studied crystal structure and transport properties of the quasi one-dimensional cobalt oxide CaCo₂O₄. The CaCo₂O₄ phase crystallizes in calcium-ferrite type structure, which consists of a corner- and edge-shared CoO₆ octahedron network including one-dimensional double chains. Large thermoelectric power (S  150 μV/K at 390 K) with metallic temperature dependence of S, moderate resistivity (ρ  2.9 × 10⁻¹ Ω cm at 390 K) with carrier localization at low temperature, and normal thermal conductivity (κ  6.3 W/Km at 390 K) were observed. The phonon mean-free path was calculated from the observed data, as a function of temperature. The long phonon mean-free path (l  24 Å at 300 K) implies that the thermal conductivity could be suppressed by impurity scattering of phonons with partial element substitution.     

Superconductivity as a Kosterlitz–Thouless transition in the two-dimensional Hubbard model

We investigate a superconducting Kosterlitz–Thouless transition in the two-dimensional (2D) Hubbard model using auxiliary quantum Monte Carlo method for the ground state. The pair susceptibility is computed for both the attractive and repulsive Hubbard model. The numerical results show that the s-wave pair susceptibility scales as χ  L² for the attractive case, in agreement with previous quantum Monte Carlo studies. The scaling χ  L² also holds for the d-wave pair susceptibility for the repulsive Hubbard model if we adjust the band parameter t′.     

Hybrid system of iron porphyrin on aminosilanized c-Si

Adsorption of iron porphyrin (Fe^IIITPPS₄) Fe(III)meso-tetra(4-sulfonatophenyl) porphine on aminosilanized surface of crystalline Si (c-Si) was investigated. Formation of nanometric structures of Fe^IIITPPS₄ on c-Si, the surface of which has been modified by various silanization procedures, was studied. Aqueous, ethanol and acetone solutions of 3-aminopropyltrietoxysilane (APTES) were prepared for deposition on c-Si by spinning or immersion techniques. Smooth homogeneous APTES films of thickness 100–500 nm were produced by multiple spin coating procedure. Thin APTES films of thickness 2.5 nm were fabricated by dipping technique followed by washing procedure. Hybrid system of Fe^IIITPPS₄/APTES/Si was prepared from a drop of Fe^IIITPPS₄ aqueous solution put on aminosilanized Si surface or by dipping the Si wafer in Fe^IIITPPS₄ aqueous solution. Nanostructures of size 50–250 nm were formed along with large rings of Ø50–100 μm which have been observed at chemisorption of highly concentrated (1 mM) Fe^IIITPPS₄ aqueous solution. Spectroscopic ellipsometry was used to characterize the APTES layer and to investigate the aggregation state of Fe^IIITPPS₄. The studies provided allowed one to presume that covalent bonds were formed between amino-groups of APTES and functional groups of sulfonic acid in porphyrin leading to immobilization of Fe^IIITPPS₄ on Si substrate.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

Field emission and room temperature ferromagnetism properties of triangle-like ZnO nanosheets

Triangle-like ZnO nanosheets have been synthesized via conventional thermal evaporation method at a low temperature of 550 °C using CuO as catalyst. The obtained samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectra. The great influences of Cu catalyst on the morphology of the obtained ZnO nanostructures were investigated. The field emission measurements confirmed that the ZnO nanosheets possessed good performance with a turn-on field of 3.1 V μm⁻¹ and a field enhancement factor of 3250, which have promising application as a competitive cathode material in FE microelectronic devices. Room temperatures ferromagnetism has been observed in the triangle-like ZnO nanosheets, although the products consist of only nonmagnetic elements.     

Ordered ultra thin ZnO films on metal substrate

Ultra thin ZnO films were prepared on metal Mo(1 1 0) substrate under ultrahigh vacuum conditions either by depositing Zn in 10⁻⁵ Pa oxygen or by oxidizing pre-deposited Zn films. The films were characterized in situ by various surface analytical techniques, including Auger electron spectroscopy, X-ray and ultraviolet photoelectron spectroscopies, low energy electron diffraction and high resolution electron energy loss spectroscopy. The results indicate that a long-range ordered and stoichiometric ZnO films are formed along its [0 0 0 1] direction. The annealing experiments show that as-prepared ZnO films are thermal stable until 800 K. This study provides constructive information to further understand the growth mechanism of ZnO films on different substrates.     

Laser gain by electron collisional pumping of Ar VII–V XII

Gain coefficients have been calculated for transitions of singlet levels ns–np of orbital n=4 and n=5 in magnesium-like ions with atomic numbers Z=18, 19, 20, 21, 22 and 23. Population inversions for 4p and 5p levels in these ions were also calculated, via electron collisional excitation, for electron temperature range of 93–231 eV and electron density range of 10¹⁶–10¹⁷ cm⁻³. Under these plasma conditions, the maximum gain that occurred for 4s–4p transition was at electron temperature of 231 eV and electron density of 4×10¹⁷ cm⁻³. Scaling of the maximum gain coefficients with atomic number Z and the plasma parameters is also presented.     

Temperature dependent photoluminescence from ZnO/MgZnO multiple quantum wells grown by pulsed laser deposition

We have studied temperature dependent photoluminescence (PL) from ZnO Multiple Quantum Wells (MQWs) of different well layer thicknesses in the range 1–4 nm grown on (0001) sapphire by a novel in-house developed buffer assisted pulsed laser deposition. At 10 K the PL peak shifted toward blue with decreasing well layer thickness and at constant well layer thickness the PL peak shifted towards red with increasing temperature. To the best of our knowledge we have observed for the first time an efficient room temperature (RT) PL emanating from such MQWs. The red shift of the PL peak with increasing temperature has been found to be due to the band gap shrinkage in accordance with the Varshni’s empirical relation. The spectral linewidth was found to increase with increasing temperature due to the scattering of excitons with acoustic and optical phonons in different temperature regimes. Both at RT and at 10 K the PL peak shifted with respect to the well layer thickness in the range of 3.35–3.68 eV with decreasing thickness in agreement with the calculated values.     

Unparticle effects on top quark rare decays

In this work we study the flavor changing neutral current (FCNC) decays of the top quark, t→cγ and t→cg, in the framework of the unparticle physics. The Standard Model predictions for the branching ratios of these decays are about 5×10⁻¹⁴, and 1×10⁻¹², respectively. The parameter space of λ, Λ, and d is obtained by taking into account the SM predictions and the results of the simulation performed by the ATLAS Collaboration for the branching ratios of t→cγ and t→cg decays.     

High-performance pyroelectric single crystals for uncooled infrared detection applications

Uncooled pyroelectric infrared detectors based on ferroelectric single crystals 0.74Pb(Mg_1/3Nb_2/3)O₃–0.26PbTiO₃ (PMN–0.26PT) were fabricated. The performances of pyroelectric detectors dependence on detector fabrication temperature, absorption layer, and element thickness were compared. The room-temperature voltage responsivity (R_v) of 200 V/W and specific detectivity (D^*) of 10⁸ cm Hz^1/2/W at 12.5 Hz have been achieved. The results reveal that the better pyroelectric response can be expected by controlling temperature below 70 °C during the fabrication of the pyroelectric detectors, selecting absorption layer with high absorption coefficient, and decreasing the thickness of the elements.     

A simple scanning semiconductor diode laser source and its application in wavelength modulation spectroscopy around 825 nm

A very simple and inexpensive tunable semiconductor diode laser controller is designed for stable operation of the diode laser. The diode laser controller is stable within +/−8 μA and +/−10 mK, respectively. The noise spectrum of the current controller is studied by FFT analysis. We have used our home-made diode laser system in a tunable diode laser absorption spectrometer (TDLAS) to probe weak overtone transitions of water vapour molecule. The diode laser wavelength is coarsely tuned by changing the operating temperature to probe (2, 1, 1)←(0, 0, 0) band overtone transitions of water vapour within 818–835 nm. To demonstrate line shape study, seven transitions are scanned by ramping the drive current of the diode laser (at constant operating temperature) under different perturber (laboratory air) pressures within the sample cell. A balanced detector and a lock-in amplifier are used for phase sensitive detection purpose. Small current modulation amplitude, balanced detection and proper adjustment of the lock-in amplifier help to obtain a S/N ratio ranging from 100 to 7 using a small sample path length of 1.5 m. Experimentally obtained derivative spectrum is numerically integrated to reveal the original line shape and fitted with a nonlinear least squares fitting program to extract air broadening coefficients and line strength parameters. The spectroscopic line parameters are compared with the results from HITRAN database.