Evolution of phonon nonequilibrium in single-crystal ZnSe at liquid-helium temperatures

The photoluminescence and nonequilibrium heat transfer observed in ZnSe single crystals grown by the free growth method on an oriented single-crystal ZnSe substrate in a hydrogen atmosphere were investigated. The nonequilibrium heat transfer (or propagation of nonequilibrium phonons) was studied by the heat pulse method. A region of local thermal equilibrium or “a hot phonon spot” was found to form in the material, and the threshold of its formation was determined. The constant of spontaneous anharmonic phonon decay in ZnSe was estimated from an analysis of the propagation of nonequilibrium phonons via comparison of the experimental responses with those calculated by the Monte Carlo method.     

Nonlocal effects in diffusive propagation of heat pulses in systems with trapping centers of nonequilibrium phonons

The propagation of heat pulses in systems with defects as trapping centers of nonequilibrium phonons is investigated theoretically. Among these defects are point defects involving two-level systems (TLSs) of different nature. It is demonstrated that, in addition to the principal signal, one more signal can be detected by the bolometer due to reemission of the nonequilibrium TLS energy at a certain ratio of relaxation times in the phonon and TLS subsystems. The temperature and concentration dependences of the time of signal arrival at the bolometer are analyzed. The results of theoretical investigations are compared with experimental data on the propagation of weakly nonequilibrium thermal phonons in solid solutions of the Y_3?x Er_xAl₅O₁₂ rare-earth yttrium aluminum garnets.     

Phonon-pulses propagation and phonon focusing in hexagonal-crystal rods in the boundary-scattering regime

The influence of the sample surface on the propagation of ballistic phonons in cylindrical samples of hexagonal crystals is studied. Our approach is based on the solution of the Boltzmann-Peierls equation with an external phonon source. The phonon irradiation of a detector face is calculated for⁴He and Zn crystals. It is shown how the strong phonon focusing, occurring in the slow modes of these solids, affects on the shape of energy flux falling upon the detector area. For an appropriately chosen lengthto-radius sample ratio, phonons reflected from the sample surface dominate in the detected signal.     

Nonequilibrium phonon propagation in high-purity CdTe

Propagation of nonequilibrium acoustic phonons in samples of high-purity CdTe (impurity content ～10¹⁶ cm^?3) was studied using the heat pulse technique under pulsed photoexcitation. An analysis of nonequilibrium phonon propagation made by comparing the experimental response with Monte Carlo calculations assuming samples to be without twins provided an estimate for the spontaneous anharmonic phonon decay constant A_L=2×10^?52 s^?1 Hz^?5. The probability of free phonon transit through a twin boundary in a sample with twin structure was estimated as A_C=0.96.     

声子气的状态方程和声子气运动的守恒方程

根据爱因斯坦的狭义相对论中质能的等效关系，把固体(本文指非导体)晶格(原子)的质量分为晶格(原子)的静质量和晶格热振动能量的等效质量两个部分，后者就是固体中声子气的等效质量.晶格(原子)热振动的能量则分为晶格(原子)静质量具有的热能以及声子气质量具有的热能.基于固体的状态方程，导得了晶格静质量热振动的状态方程和声子气的状态方程.声子气在固体介质中的宏观运动就是热量在固体中的传递过程.建立了声子气运动的守恒方程组，分析表明，忽略惯性力时声子气的动量守恒方程就退化为傅里叶导热定律，阐明了傅里叶导热定律的物理本质是声子气驱动力与阻力的平衡方程.当热流密度很大惯性力不能忽略时，傅里叶导热定律不再适用. 关键词： 非傅里叶导热 声子气 声子气质量 状态方程 守恒方程     

Phonon pulse detection in germanium and silicon with a fluorescence contact-type phonon spectrometer

Laser pulse produced nonequilibrium acoustic phonons in Ge and Si single crystals have been detected at several phonon frequencies in the THz range by the fluorescence from an insulting YF₃:Tn³⁺ film on the sample surface.     

Acoustic waves and phonon focus in Li crystal: the first principle study

The acoustic waves in Li are investigated by solving the Christoffel equations.Theoretical calculations of the three dimensional slowness surfaces give insights into themixing of longitudinal and transverse modes and show the origin of the phonon caustics.The results are explained in terms of phonon focusing due to the anisotropy of crystals.The propagation of elastic waves in Li is affected by the elastic anisotropy of thelattice.     

Scattering of thermal phonon pulses by isotopes in silicon

The pure ballistic propagation of acoustic phonons in crystals at low temperatures can be described within anisotropic continuum acoustics. One needs only the elastic constants and mass densities to calculate the time-dependent spectral phonon irradition of the bolometer for a given radiator pulse power and detector/radiator geometry. We extend this treatment by including single isotope-scattering events for the phonons in a (111)-cut silicon disk on their flight from the radiator to the detector. Using the earlier experimentally determined polarization and frequency dependent phonon absorption in the bolometer metal, the instantaneous temperature of the bolometer can be calculated from this irradiation. This allows a direct comparison with measured bolometer temperatures using exactly the same transmission or reflection arrangement as in calculation. A very satisfying agreement is observed in the expected range of single phonon scattering.     

Quantitative investigation of thermal phonon pulses in sapphire,silicon, and quartz

Using pulse-heated constantan films as a thermal phonon radiator and superconducting tin bolometer as a phonon detector, we present for the first time a full quantitative comparison between observed bolometer signals and adequate rigorous model calculations for transmission experiments ina-cut sapphire, [111]-cut silicon, as well asX-cut quartz andZ-cut quartz. Details of the observed phonon signals are explained and understood. From these experiments, we are also able to extract information about the phonon absorption coefficient in the normal state of the polycrystalline tin bolometer for longitudinal and transverse polarized phonons in quantitative agreement with an earlier experiment ina-cut sapphire which was performed with a superconducting tunnel junction as a detector. The observed transmission signals can be explained for sapphire and silicon by ballistic propagation with additional small angle scattering, but for quartz strong frequency downconversion occurs for phonons with frequencies above half a Terahertz.In a succeding paper (Part II) the parameter deduced from the transmission experiment are applied to the analysis of the observed phonon signals in reflection experiments in the same crystals under the same conditions.Supported by Deutsche Forschungsgemeinschaft     

Theoretical model of phonon propagation in micro- and nanostructural materials

Peculiarities of the kinetics of weakly nonequilibrium thermal phonons (λ_ph = 10−50 nm) in nanodispersed ceramics are investigated. The features of the phonon spectrum in the wavelength range λ_ph ∼ R _g (where R _g is the average size of a ceramic grain) are studied. The conditions yielding the formation of a gap in the phonon spectrum of nanodispersed materials are analyzed. It is shown that the presence of inclusions with characteristic sizes smaller than the grain size of the parent ceramic material (pores, inclusions of other phases) shifts the gap toward the high-frequency range of the phonon spectrum. Peculiarities of the transport of nonequilibrium phonons during the transition from nano- to microdispersed sizes of the ceramic structure are analyzed.     

Acoustic phonon spectroscopy

An introduction is given to an acoustic phonon spectrometer, which is based on optical modulation techniques to detect magnetic circular dichroism. The spectrometer is capable of detecting deviations from a thermal background at a few degrees Kelvin of 1 part in 10⁴ within a 4 mK (80 MHz) bandwidth over the phonon energy range of 0.3 to 16K. Because the strongest phonon interactions in dielectric crystals at a few degrees Kelvin occur on the surfaces, many of the applications have been concerned with surface problems.     

Tunneling current induced phonon generation in nanostructures

We analyze generation of phonons in tunneling structures with two electron states coupled by electron-phonon interaction. The conditions of strong vibration excitations are determined and the dependence of nonequilibrium phonon occupation numbers on the applied bias is found. For high vibration excitation levels, a self-consistent theory for the tunneling transport is presented. The text was submitted by the authors in English.     

Spatial dependence of the phonon energy spectrum in resistive film heaters

The steady state spatial dependence of the coupled electron-phonon distributions is studied in a heated metallic film generating high frequency phonons. The phonon energy density spectrum depends significantly on the direction of propagation. It is compared with the spectrum obtained in a substrate- phonon relaxation time model.     

Phonon propagation through photonic crystals—media with spatially modulated acoustic properties

The thermal conductivity κ of photonic crystals differing in degree of optical homogeneity (single crystals of synthetic opals) was measured in the 4.2–300 K temperature range. The thermal conductivity revealed, in addition to the conventional decrease in comparison with solid amorphous SiO₂ characteristic of porous solids, a noticeable decrease for T<20 K, the range wherein the phonon wavelength in amorphous SiO₂ approaches the diameters of the contact areas between the opal spheres. This effect is enhanced in the case of phonon propagation along the SiO₂ sphere chains (six directions in the cubic opal lattice). The propagation of light waves (photons) through a medium with spatially modulated optical properties (photonic crystals) is presently well studied. The propagation of acoustic waves through a medium with spatially modulated acoustic properties (phononic crystals) may also reveal specific effects, which are discussed in this paper; among them are, e.g., the ballistic mode of phonon propagation and waveguide effects.     

Three phonon processes in GaN

In the harmonic approximation the Hamiltonian of the vibrational states gives the picture of non-interacting phonons in a crystal. At finite temperatures all crystals contain anharmonic lattice forces. The effect of anharmonicity introduces the interactions of independent phonons in crystals. The number of independent vibrational modes originating from the high symmetry points and lines in the Brillouin zone is determined by lattice mode representation (LMR). The three phonon processes such as overtones and combinations are subjected to group theoretical selection rules. The overtones result from the Symmetrized Cubes of active species (irreducible representations (irrps)) and combinations from the complete reduction of the triple Kronecker product of different irrps according to which the vibrational states of crystals are classified. We have determined the symmetry allowed overtones, simple and general combinations of three phonon processes in GaN. The back-scattering Raman spectroscopy from GaN in the region 900–2200 cm⁻¹ yields several optically active transitions; these are analyzed in terms of the derived three phonon Raman selection rules.     

Theory of phonon damping in solid helium

A method is presented which uses the selfconsistent phonon approximation to obtain the lifetime and shift of phonons in quantum crystals. Short range correlations are taken into account with Jastrow-factors in a consistent way. The method can be used for non-primitiv crystals.     

Intensity of the Mössbauer effect in crystals with vacancies and in solid solutions for the case of nonlocalized vibrations

The phonon spectra obtained in [2, 3] are employed to calculate the intensity of the Mössbauer line for crystals with vacancies and for solid solutions on the supposition that localized vibrations are absent and that the vacancy and impurity-atom concentrations are small. A method of calculating concentrations at low and high temperatures is proposed which is suitable for crystals with vacancies and for solutions of isotopes.     

Images of the phonon propagation across twist-bonded crystals

We investigate identical but twist-bonded crystals using phonon imaging techniques. As in homogeneous crystals, very anisotropic flux patterns are observed. However, the shape of the pattern depends dramatically on the respective twist angle. The observed phonon images in wafer bonded GaAs/GaAs and Si/Si samples are essentially consistent with the predictions of the acoustic mismatch model for defect-free interfaces, with the exception of GaAs wafers twist bonded at a 45 degrees angle where modes with large shear stress are missing, which indicates strong dislocation scattering.