Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core

We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air, low turn-on voltages (0 to +5 V), and high on/off ratios of 10(7)-10(8). These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution     

Observations of PDDTT subject to thermal treatment: correlation between performance and order

We show that polybis(thienyl)thienodia-thiazolethiophene (PDDTT), a high-performance semiconducting polymer for photodetectors and field-effect transistors, has strong performance dependence on annealing temperature. An unprecedented increase of 3 orders of magnitude is observed in both transistor and photoconductive properties. XRD and AFM evidence points to increased ordering in PDDTT films with annealing. This correlation highlights the importance that order has in determining performance in PDDTT and has possible implications in the design of polymers.     

Synthesis and characterization of a thiazolo[5,4-d]thiazole-based copolymer for high performance polymer solar cells

A highly processable, new semiconducting polymer, PCDTTz, based on alternating thiazolothiazole and carbazole units was synthesized. The new polymer exhibited a field-effect carrier mobility of up to 3.8 × 10(-3) cm(2) V(-1) s(-1) and bulk heterojunction solar cells made from PCDTTz produced a power conversion efficiency of 4.88% under AM 1.5 G (100 mW cm(-2)) conditions.     

A Conjugated Polymer Containing Arylazopyrazole Units in the Side Chains for Field-Effect Transistors Optically Tunable by Near Infra-Red Light

Optically tunable field-effect transistors (FETs) with near infra-red (NIR) light show promising applications in various areas. Now, arylazopyrazole groups are incorporated in the side chains of a semiconducting donor–acceptor (D-A) polymer. The cis–trans interconversion of the arylazopyrazole can be controlled by 980 nm and 808 nm NIR light irradiation, by utilizing NaYF₄:Yb,Tm upconversion nanoparticles and the photothermal effect of conjugated D-A polymers, respectively. This reversible transformation affects the interchain packing of the polymer thin film, which in turn reversibly tunes the semiconducting properties of the FETs by the successive 980 nm and 808 nm light irradiation. The resultant FETs display fast response to NIR light, good resistance to photofatigue, and stability in storage for up to 120 days. These unique features will be useful in future memory and bioelectronic wearable devices.     

高性能双极性聚合物半导体材料与晶体管器件

有机聚合物半导体材料与晶体管器件是融合了化学、材料、半导体以及微电子等学科的前沿交叉研究方向.聚合物半导体材料分子是该领域研究的重要内容,其中双极性聚合物分子半导体材料,兼具了电子和空穴的双重载流子输运能力而受到学术界的广泛关注.本文总结了双极性聚合物半导体材料与器件的研究进展,重点介绍了我们在D-A型双极性聚合物分子半导体材料设计、加工技术与器件制备以及功能应用方面的研究工作,并论述了双极性聚合物分子半导体材料与器件研究过程中存在的科学问题及发展方向.     

Organic transistors in the new decade: Toward n-channel,printed, and stabilized devices

Significant progress has been made in designing organic semiconducting materials (OSCs) for the past few decades for organic field-effect transistors (OFETs). Much attention has been paid to the development of p-channel OSCs, with less but highly significant progress on n-channel OSCs. In this review, we focus on the advances made with OFETs in the last few years to achieve high performance in n-channel modes, air stability, and solution processability, leading to printable active electronics. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

并五苯及其衍生物在有机场效应晶体管中的应用

有机场效应晶体管（organic field—effect transistors,OFETs）是以有机半导体材料作为有源层,通过电场控制电流的电子器件．与传统的无机半导体器件相比,由于其可应用于生产大面积、柔性、低成本电子设备而备受关注,在有机存储器件、有机太阳能电池、柔性平板显示和电子纸等众多领域具有潜在而广泛的应用前景．并苯类材料因其紧密的分子堆积及优异的半导体性能被广泛研究．其中,并五苯及其衍生物在场效应晶体管中表现出良好的性质,其效果甚至可以与非晶硅相媲美,但并五苯较差的溶解性及环境稳定性阻碍了其进一步应用．科研工作者通过对分子结构进行修饰改造设计,合成了一系列并五苯的衍生物,其不仅在稳定性、电学性能和溶解性方面有很大提高,还可以将该p-型半导体材料拓展到双极性及n-型半导体材料领域．本文对并五苯及其衍生物在有机场效应晶体管中的应用进行了较为全面的综述,期望对该领域的研究起到一定的推动作用．     

Broad Bandgap D–A Copolymer Based on Bithiazole Acceptor Unit for Application in High‐Performance Polymer Solar Cells with Lower Fullerene Content

A new broad bandgap and 2D‐conjugated D‐A copolymer, PBDTBTz‐T , based on bithienyl‐benzodithiophene donor unit and bithiazole (BTz) acceptor unit, is designed and synthesized for the application as donor material in polymer solar cells (PSCs). The polymer possesses highly coplanar and crystalline structure with a higher hole mobility and lower HOMO energy level which is beneficial to achieve higher open circuit voltage (V_oc) of the PSCs with the polymer as donor. The PSCs based on PBDTBTz‐T :PC₇₁BM blend film with a lower PC₇₁BM content of 40% demonstrate a power conversion efficiency (PCE) of 6.09% with a relatively higher V_oc of 0.92 V. These results indicate that the lower HOMO energy level of the BTz‐based D–A copolymer is beneficial to a high V_oc of the PSCs. The polymer, with highly coplanar and crystalline structure, can effectively reduce the content of fullerene acceptor in the active layer and can enhance the absorption and PCE of the PSCs.

     

Hybrid polymer/nanoparticle solar cells: preparation, principles and challenges

Hybrid polymer/nanoparticle solar cells have a light harvesting layer composed of semiconducting inorganic nanoparticles and a semiconducting conjugated polymer. They have potential to give high power conversion efficiencies (PCE). However, the PCE values reported for these solar cells are not currently as high as anticipated. This article reviews the main methods currently used for preparing hybrid polymer/nanoparticle solar cells from the colloid perspective. PCE data for the period of 2005-2011 are presented for hybrid polymer/nanoparticle solar cells and compared to those from polymer/fullerene cells. The key reasons for the relatively low PCE values for hybrid polymer/nanoparticle solar cells are uncontrolled aggregation and residual insulating ligands at the nanoparticle surface. Two hybrid polymer/nanoparticle systems studied at Manchester are considered in which the onset of aggregation and its affect on composite film morphology were studied from the colloidal perspective. It is concluded that step-change approaches are required to increase the PCEs of hybrid polymer/nanoparticle solar cells and move them toward the 10% value required for widespread commercialisation. A range of nanoparticles that have potential for application in possible longer term terawatt solar energy production are discussed.     

Chemical and biological sensors based on organic thin-film transistors

The application of organic thin-film transistors (OTFTs) to chemical and biological sensing is reviewed. This review covers transistors that are based on the modulation of current through thin organic semiconducting films, and includes both field-effect and electrochemical transistors. The advantages of using OTFTs as sensors (including high sensitivity and selectivity) are described, and results are presented for sensing analytes in both gaseous and aqueous environments. The primary emphasis is on the major developments in the field of OTFT sensing over the last 5–10 years, but some earlier work is discussed briefly to provide a foundation.     

含Silole共轭聚合物的光电性能

Silole是一类含硅杂环戊二烯,近年来,由于其独特的结构特性、分子的可设计性及多样性,在光电领域得到越来越多研究者们的关注。某些silole小分子在有机发光二极管中用作发光层和电子传输层有出色的表现,但近来对含silole聚合物的研究也颇受重视,在聚集态诱导发光、化学传感器、聚合物发光二极管、聚合物太阳能电池、场效应晶体管中的应用相继有报道。因此silole是一类很有潜力的构筑光电功能材料的杂环化合物。本文根据其母体结构的不同对含silole的聚合物光电性能研究进展进行了综述。     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注。有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟。本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理。同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结。     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注.有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟.本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理.同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结.     

Field-effect characteristics and screening in double-walled carbon nanotube field-effect transistors

Field-effect transistors (FETs) have been fabricated using double-walled carbon nanotubes (DWCNTs), and electrical transport measurements have been carried out on 125 DWCNT FETs. Among these devices, 52 were found to show basically semiconducting field-effect characteristics, 44 show metallic characteristics, and 29 show neither pure semiconducting nor metallic characteristics. These 3 distinct types of field-effect characteristics were identified as resulting from the semiconducting (S)-S, metallic (M)-M or M-S, and S-M combinations of the two shells of the DWCNT. While the S-S and M-M or M-S DWCNT devices exhibit similar field-effect characteristics to those by single-walled carbon nanotube (SWCNT) devices, the S-M device responds uniquely to the external gate voltage. In particular, it was found that free charges in the inner metallic shell may screen the outer semiconducting shell from the gate effect and that the screening is directly related to the intershell interaction, which increases with increasing temperature and tube diameter. The screening is disadvantageous to the performance of DWCNT FETs, and a similar effect is expected to occur in MWCNTs.     

Organic semiconductors for solution-processable field-effect transistors (OFETs)

The cost-effective production of flexible electronic components will profit considerably from the development of solution-processable, organic semiconductor materials. Particular attention is focused on soluble semiconductors for organic field-effect transistors (OFETs). The hitherto differentiation between "small molecules" and polymeric materials no longer plays a role, rather more the ability to process materials from solution to homogeneous semiconducting films with optimal electronic properties (high charge-carrier mobility, low threshold voltage, high on/off ratio) is pivotal. Key classes of materials for this purpose are soluble oligoacenes, soluble oligo- and polythiophenes and their respective copolymers, and oligo- and polytriarylamines. In this context, micro- or nanocrystalline materials have the general advantage of somewhat higher charge-carrier mobilities, which, however, could be offset in the case of amorphous, glassy materials by simpler and more reproducible processing.     

High-performance semiconducting polythiophenes for organic thin-film transistors

Conjugated polymers have been widely studied as potential semiconductor materials for organic thin-film transistors (TFTs). However, they have provided functionally poor transistor properties when the TFTs are fabricated in air. We have developed a class of liquid crystalline regioregular polythiophenes, PQTs, that possess sufficient air stability to enable achievement of excellent TFT properties under ambient conditions. These polythiophenes exhibit unique self-assembly ability and form highly structured thin films when deposited from solution under appropriate conditions. TFTs fabricated in air with PQT channel layers have provided high field-effect mobility to 0.14 cm2 V-1 s-1 and high current modulation to over 107, together with other desirable transistor properties. These high-performance polythiophenes will therefore help bring the long-standing concept of low-cost organic/polymer transistor circuits closer to commercial reality.     

Properties of IRMOF-14 and its analogues M-IRMOF-14 (M = Cd, alkaline earth metals): electronic structure, structural stability, chemical bonding, and optical properties

The chemical bonding, electronic structure, and optical properties of the experimentally available metal-organic framework IRMOF-14 and its metal-substituted analogues M-IRMOF-14 (M = Zn, Cd, Be, Mg, Ca, Sr, Ba), which contain a pyrene-2,7-dicarboxylate linker group, have been systematically investigated using DFT calculations. The unit cell volume and atomic positions were optimized with the Perdew-Burke-Ernzerhof (PBE) functional and showed good agreement between experimental and theoretical equilibrium structural parameters for Zn-IRMOF-14. The calculated bulk moduli indicate that the whole M-IRMOF-14 series are soft materials. The estimated band gap from DOS calculations for the M-IRMOF-14 series is ca. 2.5 eV, essentially independent of the metal ion and indicative of nonmetallic character. The band gap value is distinctly different from those calculated previously for the M-IRMOF-1 (benzene-1,4-dicarboxylate linker; ca. 3.5 eV) and M-IRMOF-10 (biphenyl-4,4'-dicarboxylate linker; ca. 3.0 eV) series and this confirms that the identity of the linker is a key parameter to control band gaps in an isoreticular series of main-group MOFs. In view of potential uses of MOFs in organic semiconducting devices such as field-effect transistors, solar cells, and organic light-emitting devices, the linear optical properties of these materials were also investigated. Comparisons are made with the M-IRMOF-1 and M-IRMOF-10 series.     

General rules for selective growth of enriched semiconducting single walled carbon nanotubes with water vapor as in situ etchant

The presence of metallic nanotubes in as-grown single walled carbon nanotubes (SWNTs) is the major bottleneck for their applications in field-effect transistors. Herein, we present a method to synthesize enriched, semiconducting nanotube arrays on quartz substrate. It was discovered that introducing appropriate amounts of water could effectively remove the metallic nanotubes and significantly enhance the density of SWNT arrays. More importantly, we proposed and confirmed that the high growth selectivity originates from the etching effect of water and the difference in the chemical reactivities of metallic and semiconducting nanotubes. Three important rules were summarized for achieving a high selectivity in growing semiconducting nanotubes by systematically investigating the relationship among water concentration, carbon feeding rate, and the percentage of semiconducting nanotubes in the produced SWNT arrays. Furthermore, these three rules can be applied to the growth of random SWNT networks on silicon wafers.     

Polymer electrolyte-gated organic field-effect transistors: low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density

We report the fabrication and extensive characterization of solid polymer electrolyte-gated organic field-effect transistors (PEG-FETs) in which a polyethylene oxide (PEO) film containing a dissolved Li salt is used to modulate the hole conductivity of a polymer semiconductor. The large capacitance (approximately 10 microF/cm2) of the solution-processed polymer electrolyte gate dielectric facilitates polymer semiconductor conductivities on the order of 103 S/cm at low gate voltages (<3 V). In PEG-FETs based on regioregular poly(3-hexylthiophene), gate-induced hole densities were 2 x 10(14) charges/cm2 with mobilities >3 cm2/V.s. PEG-FETs fabricated with gate electrodes either aligned or intentionally nonaligned to the channel exhibited dramatically different electrical behavior when tested in vacuum or in air. Large differences in ionic diffusivity can explain the dominance of either electrostatic charging (in vacuum) or bulk electrochemical doping (in air) as the device operational mechanism. The use of a larger anion in the polymer electrolyte, bis(trifluoromethanesulfonyl)imide (TFSI-), yielded transistors that showed clear current saturation and square law behavior in the output characteristics, which also points to electrostatic (field-effect) charging. In addition, negative transconductances were observed using the PEO/LiTFSI electrolyte for all three polymer semiconductors at gate voltages larger than -3 V. Bias stress measurements performed with PEO/LiTFSI-gated bottom contact PEG-FETs showed that polymer semiconductors can sustain high ON currents for greater than 10 min without large losses in conductance. Collectively, the results indicate that PEG-FETs may serve as useful devices for high-current/low-voltage applications and as testbeds for probing electrical transport in polymer semiconductors at high charge density.