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1.
F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode 下载免费PDF全文
E. Yaglloglu O. Tuzun Ozmen 《中国物理 B》2014,(11):516-526
In this study, we investigate some main electrical parameters of the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 bu- tyric acid methyl ester:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon (Au/P3HT:PCBM:F4-TCNQ/n- Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) in terms of the effects of F4-TCNQ concentration (0%, 1%, and 2%). F4-TCNQ-doped P3HT:PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor (n), barrier height (ФB0), series resistance (Rs), shunt resistance (Rsh), and density of interface states (Nss) are determined from the forward and reverse bias current-voltage (l-V) characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT:PCBM:F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft (1%) doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping (2%) become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT:PCBM:F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration (1%) in P3HT:PCBM:F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) SBDs which enables the fabricating of high-quality electronic and optoelectronic devices. 相似文献
2.
The Near Surface Morphology of P3HT:PCBM Blend Films Studied by Near-Edge X-Ray Absorption Fine Structure 下载免费PDF全文
The microstructure of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) blends with various annealing temperatures are investigated in detail by the near-edge x-ray absorption fine structure. Under higher anneMing temperature (Tanneal ≥ 160℃), P3HT shows an unusual fluidity and aggregation in the surface. After annealing, the enrichment polymer component recrystallizes and forms a single P3HT phase layer in the surface of blend films. Moreover, it gives direct evidence of the PCBM content diffusing to the near surface of blend films during annealing treatment. These findings are beneficial to improving the morphology of polymer/fullerene blend films. 相似文献
3.
Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly(3-Hexylthiophene) Thin Films 下载免费PDF全文
Effects of dopant properties on microstructures and the electrical characteristics of poly (3-hexylthiophene) (P3HT) films are studied by doping 0.1 wt% 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4?TCNQ), 6,6-phenyl-C61butyric acid methyl ester (PCBM) and N,N'?Diphenyl-N,N'-(m-tolyl)-benzidine (TPD) into P3HT, respectively. The introductions of various dopants in small quantities increase the field-effect mobility and the I on/Ioff ratio of P3HT thin-film transistors. However, each of dopants shows various effects on the crystalline order and the molecular orientation of P3HT films and the performance of P3HT thin-film transistors. These can be attributed to the various size, shape and energy-level properties of the dopants. 相似文献
4.
Effect of Temperature on Structural and Magnetic Properties of Laser Ablated Iron Oxide Deposited on Si(100) 下载免费PDF全文
We fabricate Fe3O4 thin films on Si(100) substrates at different temperatures using pulsed laser deposition, and study the effect of annealing and deposition temperature on the structural and magnetic properties of Fe3O4 thin films. Subsequently, the films are characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and vibrating sample magnetometery (VSM). The XRD results of these films confirm the presence of the Fe3O4 phase and show room-temperature ferromagnetism, as observed with VSM. We demonstrate the optimized deposition and annealing conditions for an enhanced magnetization of 854 emu/cm3 that is very high when compared to the bulk sample. 相似文献
5.
Highly Efficient Simplified Organic Light-Emitting Diodes Utilizing F4-TCNQ as an Anode Buffer Layer 下载免费PDF全文
We demonstrate that the electroluminescent performances of organic light-emitting diodes (OLEDs) are significantly improved by evaporating a thin F4-TCNQ film as an anode buffer layer on the ITO anode. The optimum Alq3-based OLEDs with F4-TCNQ buffer layer exhibit a lower turn-on voltage of 2.6 V, a higher brightness of 39820cd/m^2 at 13 V, and a higher current efficiency of 5.96cd/A at 6 V, which are obviously superior to those of the conventional device (turn-on voltage of 4.1 V, brightness of 18230cd/m^2 at 13 V, and maximum current efficiency of 2.74calla at 10 V). Furthermore, the buffered devices with F4-TCNQ as the buffer layer could not only increase the efficiency but also simplify the fabrication process compared with the p-doped devices in which F4-TCNQ is doped into β-NPB as p-HTL (3.11 cd/A at 7 V). The reason why the current efficiency of the p-doped devices is lower than that of the buffered devices is analyzed based on the concept of doping, the measurement of absorption and photoluminescence spectra of the organic materials, and the current density-voltage characteristics of the corresponding hole-only devices. 相似文献
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Characterization of Mn—Doped Ba1—xSrxTiO3 Thin Films Prepared by the Sol—Gel Method 总被引:1,自引:0,他引:1 下载免费PDF全文
Undoped and Mn-doped Ba1-xSrxTiO3(BST) thin films have been fabricated on Pt/Ti/SiO2/Si by an aqueous acetate sol-gel method.The BST stock solution can be easily mixed with an aqueous metal ion solution and is stable at room temperature.The annealing temperature of the doped and undoped films is between 650-750℃.The x-ray photoelectron spectra results show that the Mn2p3/2 valence state in the BST is the sampe as that of the original Mn(Ⅱ) dopant,The dielectric constant of the BST thin films can be increased to 800,and the loss tangent can be decreased to 0.01 due to the Mn(Ⅱ) doping.The leakage current of the BST films can also be greatly reduced. 相似文献
7.
Conformational Transition of Poly (Acrylic Acid) Detected by Microcantilever Sensing 总被引:1,自引:0,他引:1 下载免费PDF全文
Poly (acrylic acid) (PAA) chains are grafted on one side of a microcantilever by the self-assembled method and the deflections of the microcantilever are detected as a function of medium pH from 3 to 11. It is found that when the pH varies, the microcantilever deflects because of the changing surface stress. By analysing the electrostatic repulsive effect, the surface stress change is related to the conformation transition of PAA from a collapse state to a swelling state. This method offers the interaction information among the polymer chains during the conformational transition and affords an alternative way to study conformational change of polymers. 相似文献
8.
Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors 下载免费PDF全文
In order to enhance the performance of regioregular
poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs),
RR-P3HT FETs are prepared by the spin-coating method followed by vacuum
placement and annealing. This paper reports that the crystal
structure, the molecule interconnection, the surface morphology,
and the charge carrier mobility of RR-P3HT films are affected by
vacuum relaxation and annealing. The results reveal that the
field-effect mobility of RR-P3HT FETs can reach 4.17×10^ -
2~m2/(V.s) by vacuum relaxation at room temperature
due to an enhanced local self-organization. Furthermore, it reports
that an appropriate annealing temperature can facilitate the crystal
structure, the orientation and the interconnection of polymer
molecules. These results show that the field-effect mobility of
device annealed at 150~℃ for 10 minutes in vacuum at atmosphere
and followed by placement for 20 hours in vacuum at room temperature
is enhanced dramatically to 9.00×10^ - 2
~cm2/(V.s). 相似文献
9.
The effects of annealing temperature on the structural and optical properties of ZnO films grown on Si (100) substrates by sol-gel spin-coating are investigated. The structural and optical properties are characterized by x-ray diffraction, scanning electron microscopy and photoluminescence spectra. X-ray diffraction analysis shows the crystal quality of ZnO films becomes better after annealing at high temperature. The grain size increases with the temperature increasing. It is found that the tensile stress in the plane of ZnO films first increases and then decreases with the annealing temperature increasing, reaching the maximum value of 1.8 GPa at 700℃. PL spectra of ZnO films annealed at various temperatures consists of a near band edge emission around 380 nm and visible emissions due to the electronic defects, which are related to deep level emissions, such as oxide antisite (OZn), interstitial oxygen (Oi), interstitial zinc (Zni) and zinc vacancy (VZn^-), which are generated during annealing process. The evolution of defects is analyzed by PL spectra based on the energy of the electronic transitions. 相似文献
10.
Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors 下载免费PDF全文
This paper investigates the effects of concentration on the
crystalline structure, the morphology, and the charge carrier
mobility of regioregular poly(3-hexylthiophene) (RR-P3HT)
field-effect transistors (FETs). The RR-P3HT FETs with RR-P3HT as an
active layer with different concentrations of RR-P3HT solution from
0.5~wt% to 2~wt% are prepared. The results indicate that the
performance of RR-P3HT FETs improves drastically with the increase
of RR-P3HT weight percentages in chloroform solution due to the
formation of more microcrystalline lamellae and bigger nanoscale
islands. It finds that the field-effect mobility of RR-P3HT FET with
2~wt% can reach 5.78× 10^-3~cm2/Vs which is higher
by a factor of 13 than that with 0.5~wt%. Further, an appropriate
thermal annealing is adopted to improve the performance of RR-P3HT
FETs. The field-effect mobility of RR-P3HT FETs increases
drastically to 0.09~cm2/Vs by thermal annealing at
150~℃, and the value of on/off current ratio can reach
10^4. 相似文献
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