MoSi2能隙的高压调制

 采用LMTO-ASA方法，对过渡金属MoSi₂在高压下的电子结构性质进行了研究，计算中考虑了除自旋-轨道耦合外的所有相对论效应。结果表明：随着压缩度增加，MoSi₂小的能隙变宽，Mo的d电子与Si的p电子杂化增强，原子间相互作用增大，晶体在高压下更加紧密结合。这一能隙随压力增大而增大的结果，与非导体在高压下金属化的特性相反。     

FeS2能隙的外压微扰调制

 采用基于密度泛函理论的自洽赝势方法，计算了FeS₂在外压调制下的电子结构性质。计算结果表明：随着压缩度的增加，外压调制下的Fe—S键长缩短，FeS₂小的能隙变宽，Fe的d电子与S的p电子杂化增强，原子间相互作用增大。这一能隙随压力增大而增大的结果，与非导体在高压下金属化的特征相反。     

高压下Al的零温电子结构和物态方程

 用LMTO法（线性Muffin-Tin轨道法），计算了金属铝的超高压电子结构及零温物态方程。Al的压缩比到10，压力达10 TPa。根据第一原理计算结果，在带结构方面，s带总是处于Fermi能以下，随着压力的增加，s、p和d的带宽增加，随后则杂化程度增加，所以s、d轨道的电子占据数连续变化。上述变化对压力的影响也是连续的，换言之，从s→d转变没有理由说明Al在0.5 TPa附近冲击Hugoniot的斜率的拐弯现象。而这一点则是与Altshuler的观点不同。物态方程的第一原理计算结果表明，bcc结构比fcc结构要软，但因差别不很大，即使发生fcc→bcc的转变，也不会引起Hugoniot的质的变化（拐弯）。Al的LMTO物态方程还表明，我们以前所采用的半经验的冷压误差可达30%。为此，根据LMTO结果，给出新的冷压表达式p=∑_i=0⁵a_iδ^i/3，δ=Ω₀/Ω，其中a₀=-7.327 79，a₁=18.754 3，a₂=10.209 7，a₃=-2.523 53，a₄=-4.787 2，a₅=6.065 94，拟合误差小于3%。     

应变层超晶格(InAs)n/(GaAs)n的电子结构与价带能量不连续性

采用内部求和d轨道处理下的线性丸盒轨道方法,对在GaAs衬底上生长的应变层越晶格(InAs)_n/(GaAs)_n(001),(n=1,2,3,4,5)的电子结构进行了第一性原理计算,得出了其能带结构、带隙值和态密度分布.本文得出的(lnAs)_1(GaAs)_1在布里渊区中各高对称点的能隙值与从头赝势方法的计算结果相一致,得出的带隙值与光致发光实验结果符合得很好.为了确定该系统的价带能量不连续值(△E_(?)),并全面考虑各因素对其的影响,本文提出一种基于自治超原胞计算及其冻结势处理下的形变势方法.该方 关键词：     

高压下RhB的相变、弹性性质、电子结构及硬度的第一性原理计算

采用密度泛函理论中的赝势平面波方法系统地研究了高压下RhB的结构相变、弹性性质、电子结构和硬度.分析表明,RhB在25.3 GPa时从anti-NiAs结构相变到FeB结构,这两种结构的弹性常数、体弹模量、剪切模量、杨氏模量和弹性各向异性因子的外压力效应明显.电子态密度的计算结果显示,这两种结构是金属性的,且费米能级附近的峰随着压强的增大向两侧移动,赝能隙变宽,轨道杂化增强,共价性增强,非局域化更加明显.此外,硬度计算结果显示,anti-NiAs-RhB的金属性比较弱,有着较高的硬度,属于硬质材料.     

高压下高温超导材料YBa2Cu3O7的电子结构

 本文选用拟合能带的Harrison参数构造紧束缚哈密顿矩阵，采取Recursion方法计算了YBa₂Cu₃O₇晶体在常压下与9 GPa高压下（此时晶格常数压缩3%）的电子结构。讨论了高压对于电子结构的影响。给出了高压下费米面移动，能带展宽和各晶位原子价变化的定量结果。     

高压下ZnTe的电子结构和光电性质

应用第一性原理平面波赝势计算方法,研究了闪锌矿ZnTe晶体在外界压力下的电子结构和光电性质,并计算了介电函数和光学吸收系数随压力的变化情况。结果表明:在高压作用下,Te原子和Zn原子的态密度分布都向低能量方向移动,分布范围增大,Te 5p和Zn3d电子轨道杂化变强。随着压力的增大,直接带隙逐渐增大,而间接带隙逐渐变小。当压力为10.7GPa时,能带结构从直接带隙转变为间接带隙结构。压力增大,有利于Te 5p与Zn3d电子间的跃迁,光吸收系数增大,产生更多的电子-空穴对,材料导电能力增强。     

SiC多型体几何结构与电子结构研究

采用平面波超软赝势法和范数不变赝势法对几种SiC多型体的几何结构、能带结构等进行了系统的研究.结果表明:6HSiC导带最低点在ML线上U点,用平面波超软赝势法计算时U点在(0000,0500,0176)点附近;而用范数不变赝势法计算时在导带最低点附近能带呈现不连续点,不连续点出现在(0000,0500,0178)点附近.两种赝势法计算结果相比,用平面波超软赝势法得到的导带最低点位置更靠近布里渊区M(0,05,0)点.在平面波超软赝势下,随着六角度的增加,cp,cpa增大的趋势较为明显,能隙和价带宽度变宽的趋势也较为明显.在计算极限内,绝对零度下4HSiC系统能量最低、最稳定,而Ewald能量显示3CSiC最稳定. 关键词： 密度泛函理论 电子结构 SiC     

不同压强下BiI3的电子结构和光学性质

基于密度泛函理论研究了压强对BiI3的结构、电子和光学性质的影响,研究过程中考虑了自选轨道耦合（SOC）效应。计算的能带结果表明：在0GPa条件下,BiI3具有1.867电子伏特的间接带隙,随压强的提升带隙值降低;施加压强也能增强BiI3的光吸收系数和光电导率。0GPa条件下,BiI3的吸收系数为4×105 cm-1,光电导率为3×103 Ω-1•cm-1,因此 BiI3可作为光伏应用的备选材料。     

单轴应变对氮化铟电子结构及光学性质的影响

采用密度泛函理论框架下的第一性原理平面波赝势方法,计算单轴应变下闪锌矿氮化铟的电子结构及光学性质.结果表明：施加应变会使带隙变窄.对于拉应变,随着应变增大带隙减小程度增大;对于压应变,随应变增大带隙减小程度减弱;且拉、压应变对带隙调控都是线性的.在能量区间4 eV~12 eV范围内施加应变时,氮化铟的吸收光谱发生红移,随拉应变程度增加,吸收光谱的红移进一步加大;随压应变增加,吸收光谱红移减弱;在该范围内,氮化铟的折射率、反射率随拉应变的增大而增加,随压应变增加减小;施加拉应变时能量损失函数峰值增大,施加压应变后能量损失函数峰值减小.通过施加单轴应变能有效调节氮化铟材料的电结构及光学性质.     

Theoretical approaches to the electronic structure of disordered solids

A short review is presented on a theoretical numerical approach to the calculation of the electronic structure of disordered and amorphous solids. A chemically specific approach is thereby advocated. A new procedure to fit in a tight-binding method the band structure of complex solids is introduced. The electronic structure of different defect models of a-Si and a-Si:H is described. Then the interplay of disorder and electron–electron interactions in the disordered cubic tungsten bronzes, Na_xWO₃, is addressed which leads to a pseudogap at the Fermi level. This work results in an understanding of the metal–insulator transition for finite doping degree.     

Hybridized nature of pseudogap in Kondo insulators CeRhSb and CeRhAs

We studied the electronic structure of Kondo insulators CeRhSb and CeRhAs using high-resolution photoemission spectroscopy. We found that the 4f-derived density of states shows a depletion (pseudogap) at E(F) in contrast to metallic Kondo materials. It was found that the size of the f pseudogap is smaller than that of conduction electrons ( c pseudogap) while both scale well with the Kondo temperature. The present results indicate that the hybridization between 4f and conduction electrons near E(F) is essential for the Kondo gap in the Ce-based compounds.     

The origin of the pseudogap in α-Ga

Density functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry.     

Crossover from a pseudogap state to a superconducting state

This paper deduces that the particular electronic structure of cuprate superconductors confines Cooper pairs to be first formed in the antinodal region which is far from the Fermi surface,and these pairs are incoherent and result in the pseudogap state.With the change of doping or temperature,some pairs are formed in the nodal region which locates the Fermi surface,and these pairs are coherent and lead to superconductivity.Thus the coexistence of the pseudogap and the superconducting gap is explained when the two kinds of gaps are not all on the Fermi surface.It also shows that the symmetry of the pseudogap and the superconducting gap are determined by the electronic structure,and non-s wave symmetry gap favours the high-temperature superconductivity.Why the high-temperature superconductivity occurs in the metal region near the Mott metal-insulator transition is also explained.     

Electronic structure and possible pseudogap behavior in iron based superconductors

Starting from the simplified analytic model of electronic spectrum of iron-pnictogen (chalcogen) high-temperature superconductors close to the Fermi level, we discuss the influence of antiferromagneting (AFM) scattering both for stoichiometric case and the region of possible short-range order AFM fluctuations in doped compounds. Qualitative picture of the evolution of electronic spectrum and Fermi surfaces (FS) for different dopings is presented, with the aim of comparison with existing and future ARPES experiments. Both electron and hole dopings are considered and possible pseudogap behavior connected with partial FS “destruction” is demonstrated, explaining some recent experiments.     

Nodal superconductivity and antinodal pseudogap in cuprate superconductors

According to recent experimental findings the leading pairing resides in the nodal (FS arcs) momentum region of hole doped cuprates. The pseudogap is an antinodal feature. A corresponding multiband model of the electronic background evolving with doping serves the usually presented phase diagram. The pairing is due by the pair-transfer between overlapping nodal defect (polaron) band and the itinerant band. A bare gap vanishing with extended doping between the antinodal defect subband and the itinerant band top leads to the formation of the pseudogap as a perturbative band-structure effect. The calculated behaviour of two superconducting gaps and of the pseudogap on the whole doping scale is in qualitative agreement with the observations. Arguments to include cuprates into the class of multiband-multigap superconductors are given by these results.     

单轴压缩下Ti3B4的力学、电学性能及变形机制的第一性原理研究

Ti3B4作为一种重要的钛硼化合物,被广泛应用于工业生产和国防军事中.但是有关Ti3B4在外载荷下的变形行为却鲜有报道,这在很大程度上限制了它的应用.本文采用基于密度泛函理论的第一性原理方法研究了Ti3B4在不同方向单轴压缩下的力学行为、电子结构以及变形机制.结果表明,在不同方向单轴压缩下,Ti3B4的变形行为表现出很强的各向异性.a轴压缩下,层内Ti-Ti键减弱使Ti3B4承载能力降低,最终层间Ti-Ti键和沿b轴B-B键断裂造成压缩应力突降;b轴压缩下,层内Ti-B键减弱和层间Ti-B键增强导致Ti3B4承载能力逐渐降低,B-B键断裂导致结构破坏;c轴压缩下,层内Ti-B键断裂和层间Ti-B键形成使结构稳定性降低.由态密度分布可知,在单轴压缩下,变形后的Ti3B4仍然呈现金属性,但是其共价性能降低.通过讨论Ti3B4在不同方向单轴压缩下的力学行为与微观变形机制可以为改善其宏观性能提供一定的理论指导.     

Optical pseudogap from iron states in filled skutterudites AFe4Sb12 (A=Yb, Ca, Ba)

Optical investigations are presented of the filled skutterudites AFe4Sb12 with divalent cations A=Yb, Ca, Ba. For each of these compounds a very similar pseudogap structure in the optical conductivity develops in the far-infrared spectral region at temperatures below 90 K. Highly accurate local-density approximation electronic band structure calculations can consistently explain the origin of the pseudogap structure generated largely by transition metal 3d states. In particular, a 4f-conduction electron hybridization or strong correlations can be ruled out as origin for the pseudogap.     

铜氧化物超导体两能隙问题的电子拉曼散射理论研究

电子拉曼实验表明在空穴型掺杂的铜氧化物超导体中存在两能隙行为,即在欠掺杂区,随着掺杂浓度的降低,一个能隙逐渐增大而且在超导转变温度以上仍然存在,而另一个能隙逐渐减小且在DDW态依然存在.解释两能隙行为非常重要因为它与赝能隙的机理密切相关.本文计算了超导序和d-density-wave(DDW)序竞争机理下相图上不同区域的电子拉曼谱,发现欠掺杂区能隙表现出两能隙行为,与实验一致.特别地,本文发现B_1g峰对应能量由超导和DDW序共同决定,且随着掺杂浓度的降低而增大,在D 关键词： 两能隙 电子拉曼散射 竞争序