Superconductivity and pseudogap states studied by microwave conductivity measurements of λ-(BEDT-TSF)2GaCl4

We have investigated the microwave response at 45 GHz in an organic superconductor λ-(BEDT-TSF)₂GaCl₄ with T_c = 4.8 K. We determine the μ₀H_c2–T phase diagram from microwave loss and find that the superconducting state is in the pure limit (l/ξ_GL  10). Although the real part of the complex conductivity (=σ₁ + iσ₂) does not show a coherence peak just below T_c, the London penetration depth completely saturates at low temperatures down to T/T_c = 0.2, which may provide an evidence for a conventional s-wave pairing. In the metallic state below about 50 K, (parallel to the c-axis) deviates downward from , while σ₂, which should be zero in a conventional metal, increases exponentially toward T_c. In spite of the fact that the Hagen–Rubens limit is well satisfied as far as the dc conductivity is concerned, a Drude model is unable to explain the large positive σ₂. In order to explain such anomalies in the metallic state, we propose a possible existence of so-called a pseudogap near a Fermi level. The anomalous increase of the positive σ₂ may be attributed to an appearance of pre-formed electron pairs in the pseudogap state. This appearance can be regarded as a precursor to the superconducting transition. Such a precursory phenomenon has been observed also in the isostructural FeCl₄ salt with the anomalous metallic states, which shows a negative σ₂ in contrast to the GaCl₄ salt. Just the opposite of ground states in between the GaCl₄ and FeCl₄ salts may result in the contrasting anomalous metallic states with different precursory phenomena with opposite signs of σ₂.     

Optical characterization of amorphous Ga50Se45S5 films

The transmission spectra of thermally evaporated Ga₅₀Se₄₅S₅ films were measured over the wavelength range 300–900 nm. A simple method, suggested by Swanepoel, was used for the determination of the optical constants and thickness of the films. Increasing the thickness of the film beyond 450 nm does not affect the optical constants. The dependence of the absorption coefficient on the photon energy (hν) at the edge of the absorption band is well described by the relation hν=β(hν−E_opt)² with an optical gap equals 2.4 eV. A good fit of the experimental points with Tauc relation indicates that non-direct transition is the most probable mechanism responsible for the photon absorption inside the investigated film.     

Crosstalk between two-photon and two-color (two-photon) excitation in optical beam induced current generation with two confocal excitation beams

We analyze the influence of residual two-photon excitation (2PE) in two-color (two-photon) optical beam induced current (2CE-OBIC) generation in wide band gap semiconductor samples. 2CE-OBIC generation is accomplished with two confocal excitation beams of separation angle θ and wavelengths λ₁ and λ₂ where , λ_e = hc/E_b, h is the Planck’s constant, c is speed of light in vacuum, and E_b is the energy band gap. Because the conduction band of the sample is a continuum, at least one excitation beam would also contribute an undesirable 2PE-OBIC signal that degrades the signal-to-noise ratio of the measured 2CE-OBIC response and broadens the effective OBIC distribution in the sample particularly when θ ≠ 0 or π. We show that the deleterious effects of crosstalk are reduced by a careful selection of λ₁ and λ₂ and the relative excitation beam intensities. λ₁ and λ₂ should be chosen to minimize the ratio of the two-photon absorption coefficients (β₁, β₂) to the 2CE absorption coefficient β₁₂ or at least satisfy the constraint: β₁ + β₂  β₁₂. Keeping the two excitation intensities equal is beneficial only when β₁ = β₂. Otherwise, it is advantageous to bias the intensity ratio towards the wavelength with a lower 2PE absorption coefficient.     

The dependence of I–V and C–V characteristics on temperature in the H-terminated Pb/p-Si(1 0 0) Schottky barrier diodes

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of H-terminated Pb/p-Si/Al contacts fabricated by us have been measured in the temperature range of 77–300 K. The experimental values of the barrier height (BH) Φ_bo and the ideality factor n for the device range from 0.674 and 1.072 eV (at 300 K) to 0.352 and 2.452 eV (at 77 K), respectively. The ideality factors become larger with lowering temperature while the barrier height decreases. The Φ_bo(n) plot shows a linear dependence in the temperature range of 77–300 K that can be explained by the barrier inhomogeneity at the metal/semiconductor interface. The extrapolation of the linear Φ_bo(n) plot to n = 1 has given a homogeneous barrier height of approximately 0.713 eV for the Pb/p-Si(1 0 0) contact. A Φ_bo versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of and σ_s = 80.5 mV for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Then, a modified versus 1/T plot gives and A^* as 0.828 eV and 54.89 A/cm² K², respectively. Furthermore, an average value of −0.687 meV/K for the temperature coefficient has been obtained, the value of −0.687 meV/K for hydrogen terminated p-type Si differs from those given for p-type Si without hydrogen termination in the literature.     

Picosecond nonlinear optical response of Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition

Well-crystallized Ba_0.5Sr_0.5TiO₃ thin films with good surface morphology were prepared on MgO(1 0 0) substrates by pulsed laser deposition technique at a deposition temperature of 800 °C under the oxygen pressure of 2 × 10⁻³ Pa. X-ray diffraction and atomic force microscopy were used to characterize the films. The full width at half maximum of the (0 0 2) Ba_0.5Sr_0.5TiO₃ rocking curve and the root-mean-square surface roughness within the 5 μm × 5 μm area were 0.542° and 0.555 nm, respectively. The nonlinear optical properties of the films were determined by a single beam Z-scan method at a wavelength of 532 nm with laser duration of 55 ps. The results show that Ba_0.5Sr_0.5TiO₃ thin films exhibit a fast third-order nonlinear optical response with the nonlinear refractive index and nonlinear absorption coefficient being n₂ = 5.04 × 10⁻⁶ cm²/kW and β = 3.59 × 10⁻⁶ (m/W), respectively.     

On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature

The current–voltage (I–V) characteristics of Au/polyaniline(PANI)/p-Si/Al structures were determined at various temperatures in the range of 90–300 K. The evaluation of the experimental I–V data reveals a decrease of the zero-bias barrier height (BH) and an increase of the ideality factor (n) with decreasing temperature. It was shown that the occurrence of a Gaussian distribution of then BHs is responsible for the decrease of the apparent BH, increase of the ideality factor n due to barrier height imhomogeneities that prevail at the interface. A Φ_b0 versus 1/T plot has been drawn for evidence of the Gaussian distribution of the barrier height, and and σ₀ = 0.0943 V for the mean barrier height and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, a modified versus 1/T plot gives and A^* as 0.885 eV and A^* = 55.80 A/K² cm², respectively. Hence, it can be concluded that Au/PANI/p-Si/Al structure has a good rectifying contact and the temperature dependence of I–V characteristics of the rectifying contact on p-Si successfully have been explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.     

Structural study and magnetoresistance effect of epitaxial La0.67Sr0.33MnO3–δ and Pr0.7Ca0.3MnO3−δ multilayer films

La_0.67Sr_0.33MnO_3−δ (LSMO) and Pr_0.7Ca_0.3MnO_3−δ (PCMO) multilayer epitaxial films, which were fabricated with different LSMO and PCMO layer thickness on LaAlO₃ single crystal substrates of (0 0 1) orientation by a direct current magnetron sputtering technique, were studied further, after the structure, magnetoresistance effect and magnetic properties of LSMO/PCMO/LSMO (LPL) trilayer epitaxial films were systemically studied. The superlattice structures of multilayer films were observed according to the diffraction peaks of X-ray diffraction patterns at small angles. The metal–insulator transition temperature (T_P) and peak resistivity (ρ_max) obviously changed when we altered the thickness of PCMO middle layer and the intra-field related with the thickness of those layers and their interaction. Considering the effect of the distribution of electrical field and current, and the interaction among the layers of LSMO and PCMO, an effective fact n* was introduced to replace n (the number of layer). All the calculated values of ρ (the resistivity of multilayer films) accorded with the experimental values.     

Z-scan determination of the third-order optical nonlinearity of a triphenylmethane dye using 633 nm He–Ne laser

The third-order nonlinear optical response of a triphenylmethane dye (Acid blue 7) was studied using the Z-scan technique with a continuous-wave He–Ne laser radiation at 633 nm. The magnitude and sign of the third-order nonlinear refractive index n₂ of aqueous solution of Acid blue 7 dye were determined; the negative sign indicates a self-defocusing optical nonlinearity in the sample studied. The negative nonlinear refractive index n₂ and nonlinear absorption coefficient β were estimated to be −1.88 × 10⁻⁷ cm²/W and −3.08 × 10⁻³ cm/W, respectively, corresponding to Re(χ⁽³⁾) = −8.35 × 10⁻⁶ esu, and Im(χ⁽³⁾) = −6.88 × 10⁻⁷ esu. The experimental results show that Acid blue 7 dye have potential applications in nonlinear optics.     

X-ray and electron-energy-loss spectra of Bi, Sb, Te and Bi2Te3, Sb2Te3 chalcogenides

The valence region of Bi and Sb semimetals, of Te, and of their chalcogenides (Bi₂Te₃ and Sb₂Te₃) are explored by means of X-ray photoelectron Spectroscopy to find in their p, s and d-like orbital distributions a useful reference for interpreting the interband transitions present in the measured electron-energy-loss spectra. Their common reticular distortion (rhombohedral D₃) and their similar electronic structure justify a discussion of these compounds as a series. Our experimental data are discussed in terms of the calculated band structures.     

Correlation among electronic polarizability, optical basicity and interaction parameter of Bi2O3–B2O3 glasses

For optical basicity and electronic polarizability, the previous studies basically concentrate on the wavelength range of the visible light region. However, heavy metal oxides glasses have a reputation of being good materials for infrared region. In this study, new data of the average electronic polarizability of the oxide ion _O^2-, optical basicity Λ and Yamashita–Kurosawa's interaction parameter A of Bi₂O₃–B₂O₃ glasses have been calculated in a wavelength range from 404.66 to 1083.03 nm. The present investigation suggests that both _O^2- and Λ increase gradually with increasing wave number, and A decreases with increasing wave number. Furthermore, close correlations are studied among _O^2-, Λ, A and refractive index n in this paper. Particularly, it has been found that a quantitative relationship between electronic polarizability and optical basicity is observed in a wavelength range from 404.66 to 1083.03 nm. Our present study extends over a wide range of _O^2-, Λ and A values.     

A spectroscopic ellipsometric investigation of new critical points of Zn1−xMnxS epilayers

Zn_1−xMn_xS epilayers were grown on GaAs (1 0 0) substrates by hot-wall epitaxy. X-ray diffraction (XRD) patterns revealed that all the epilayers have a zincblende structure. The optical properties were investigated using spectroscopic ellipsometry at 300 K from 3.0 to 8.5 eV. The obtained data were analyzed for determining the critical points of pseudodielectric function spectra, (E) = ₁(E) + i₂(E), such as E₀, E₀ + Δ₀, and E₁, and three E₂ (Σ, Δ, Γ) structures at a lower Mn composition range. These critical points were determined by analytical line-shapes fitted to numerically calculated derivatives of their pseudodielectric functions. The observation of new peaks, as well as the shifting and broadening of the critical points of Zn_1−xMn_xS epilayers, were investigated as a function of Mn composition by ellipsometric measurements for the first time. The characteristics of the peaks changed with increasing Mn composition. In particular, four new peaks were observed between 4.0 and 8.0 eV for Zn_1−xMn_xS epilayers, and their characteristics were investigated in this study.     

Optical constants of Tl4Ga3InSe8 layered single crystals

The optical properties of Tl₄Ga₃InSe₈ layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500–1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10–300 K revealed that the rate of change of the indirect band gap with temperature is γ=−4.1×10⁻⁴ eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.03 eV. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.10 eV, 23.17 eV, 6.21×10¹³ m⁻² and 2.58, respectively. From X-ray powder diffraction study, the parameters of monoclinic unit cell were determined.     

Aspects of “low field” magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO₃ were grown on an (0 0 1) SrTiO₃ (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (0 0 1) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [1 0 0]_S and [0 0 1]_S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [0 0 1]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ₀H=9 T; T)−ρ( μ₀H=0 T; T)]/ρ( μ₀H=0 T; T) on the order of a few percent, with maximums of 6% and 4% (right at the Curie temperature, T_C 160 K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T<30 K) are similar to those obtained on SrRuO₃ films grown on 2° miscut (0 0 1) STO substrates with the current parallel to the field and parallel to the direction, which was identified as the easier axis for magnetization.     

Nonlinear DC conduction behavior in epoxy resin/graphite nanosheets composites

Epoxy resin (ER)/graphite nanosheet (GN) composites with a low percolation threshold (owing to particular geometry of GN with the high aspect ratio) were fabricated. The nonlinear conduction behavior of ER/GN composites above the percolation threshold by the action of variable DC electrical field was investigated. For specimens, the current density or current reduces with decreasing graphite nanosheets concentrations, and the J–E curves are well fitted by a cubic, J=σ₁E+σ₃E³. Moreover, the crossover current density J_c, at which nonlinearity takes place, scales with the linear conductivity σ₁ as with x≈1.390 and the third-order conductivity, σ₃, also scales with J_c as with y≈1.175. Through the discussion of the nonlinearity within the framework of two theoretical models, the nonlinear random resistor network (NLRRN) and the dynamic random resistor network (DRRN), it is indicated that neither of these two models can fully explain our experimental results. Taking into account the microscopic structures and conduction processes of the composites, it is likely that a combination of these two models explain the nonlinear characteristics better.     

Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties

Atomic layer deposition of Cr₂O₃ thin films from CrO₂Cl₂ and CH₃OH on amorphous SiO₂ and crystalline Si(1 0 0) and -Al₂O₃() substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05–0.1 nm/cycle was obtained at substrate temperatures of 330–420 °C. In this temperature range epitaxial eskolaite was formed on the -Al₂O₃() substrates. The predominant crystallographic orientation in the epitaxial films depended, however, on the growth temperature and film thickness. Sufficiently thick films grown on the SiO₂ and Si(1 0 0) substrates contained also the eskolaite phase, but thinner films deposited at 330–375 °C on these substrates were amorphous. The growth rate data of films with different phase composition allowed a conclusion that the crystalline phase grew markedly faster than the amorphous phase did. The amorphous, polycrystalline and epitaxial films had densities of 4.9, 5.1 and 5.1–5.3 g/cm³, respectively.     

Study on the local structure of (CrO6) complex in garnet crystals by optical and EPR spectrum

The local lattice structure distortions for YAG and YGG systems doped with Cr³⁺ have been investigated by the d³ configuration complete energy matrices which contain the Zeeman energy besides the electron–electron interaction, the trigonal crystal field as well as the spin–orbit coupling interaction. The local lattice structure parameters R and θ of (CrO₆)⁹⁻ complex are determined for Cr³⁺ in YAG and YGG systems, respectively. The calculated results show that the local lattice structures have expansion distortions, which almost tend to the same after distortions. Meanwhile, the EPR parameter D, g factors (g_||, g) and optical spectrum of these systems have been interpreted uniformly by quantitative calculation. It is shown that the effect of the orbit reduction factor k on g factors (g_||, g) cannot be ignored.     

Scaling behavior of mixed-state hall effect in MgB2 thin films

The Hall resistivity (ρ_xy) and the longitudinal resistivity (ρ_xx) in c-axis-oriented superconducting MgB₂ thin films have been investigated in extended fields up to 18 T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18 T and a wide temperature region from 10 to 28 K, a universal power law with β = 2.0 ± 0.1 was observed in c-axis-oriented MgB₂ thin films. These results can be well interpreted by using recent models.     

Cl nuclear quadrupole resonance studies of molecular motions of ClO3 and water diffusion in Ca(ClO3)2·2H2O

A ³⁵Cl nuclear quadrupole resonance (³⁵Cl-NQR) investigation of polycrystalline Ca(ClO₃)₂·2H₂O is described. The ³⁵Cl-NQR frequencies (ν_Q) for two resonance lines (ν_Q1 and ν_Q2), the spin lattice relaxation time (T_1Q) for ν_Q2 only and the line width δν_Q2 were measured in the temperature range 292–345 K, except for the frequency measured up to 455 K. The observed decrease in the resonance frequencies with increasing temperature permitted the determination of the frequencies of librations of the ClO₃⁻ ion about two axes perpendicular to the three-fold axis of the ion mainly responsible for this effect. The temperature dependence of the relaxation time T_1Q proved the occurrence of water diffusion and hindered rotation of ClO₃⁻ ions. The activation energies of these two molecular motions were determined, and their effect on the electric field gradient at the site of a chlorine nucleus was discussed. Temperature measurements of the line width δν_Q2 confirmed the conclusions drawn from the analysis of T_1Q(T).     

Gas Cotton-Mouton constant measurement by extrapolation in dissolved binary liquid solutions

The magneto-optic Cotton-Mouton effect constant C, light refraction index n and density ρ of binary solutions of toluene in carbon tetrachloride, -picoline and β-picoline in 1,4-dioxane have been measured at different concentrations. The results have been used for the calculation of the molar C^M constants of the solutions. By extrapolating the values C^M = C^M(f₂) for the concentration f₂ → 0, the constant _∞C₂^M = _gasC₂^M of the dipolar component of the solution has been found, which is interpreted as the Cotton-Mouton gas constant. For all solutions, the reduction factors of the dissolved component have been calculated and their linear dependence on the solution concentration has been found.     

Low-field negative magnetization and coercive-field magnetization reversal in transition metal chalcogenides; Cr2FeSe4 magnetic structure from neutron diffraction

Low-field negative magnetization, of the order of −10⁻¹ emu/g-Oe, from 4.2 K up to room temperature and higher (350 K), and coercive-field magnetization reversal are both present in Cr_(3−x)Fe_xX₄ for X=S, Se, Te and x=0 to 3, and for Cr₅Te₈ and Cr₇Te₈. For Cr₂FeSe₄ the zero-field-cooled (ZFC) magnetization is negative for 5 Oe and below. To obtain a more detailed knowledge of the magnetic phases involved in the observed magnetization versus temperature M(T) curves, we obtained and studied neutron diffraction (n.d.) scans on the compound Cr₂FeSe₄, taken at 14 temperatures from 4.2 to 300 K. For this same n.d. sample, the temperature for magnetization reversal of value −3×10⁻⁴ emu/g-Oe is 80 K in 40 Oe applied field, then the reversal disappears for 65 Oe applied field. The complex magnetic interactions responsible for this reversal are revealed in the hysteresis curves.