Competition of two mechanisms of retardation of domain walls in the molecular ferrimagnet [Mn{(R/S)-pn}]2[Mn{(R/S-pn}2(H2O)][Cr(CN)6]2

The temperature dependence of the magnetization reversal dynamics of the chiral molecular ferrimagnet [Mn{(R/S)-pn}]₂[Mn{(R/S)-pn}₂(H₂O)][Cr(CN)₆]₂ has been studied at low frequencies of 1–1400 Hz, which are characteristic of the domain wall motion. It has been found from the Cole-Cole plots that domain walls undergo relaxation (at temperatures T > 10 K) and creep (at T < 10 K), and the main parameters determining these modes and the transition between them have been determined. It has been shown that the quantitative regularities of the transition between the modes of the domain wall motion correspond to the concepts of the competition between the contributions of two mechanisms to the domain wall retardation (the periodic Peierls relief and random structural defects).     

Nonlinear spin-wave phenomena in a [Mn{(R/S)-pn}2]2[Mn{(R/S)-pn}2H2O][Cr(CN)6] chiral molecular ferrimagnet

The instability of ferromagnetic resonance (FMR) spectra initiated by microwave power was observed in [Mn{(R/S)-pn}₂]₂[Mn{(R/S)-pn}₂H₂O][Cr(CN)₆] single crystals. It was established that the value of threshold microwave power P _th = 0.2−0.9 mW depends on the orientation of the easy magnetization axis relative to the sweeping magnetic field of the spectrometer. P > P _th spin-wave bistability occurs in the region of high microwave fields.     

Effect of dehydration on the ferrimagnetic resonance in [Cr(CN)<Subscript>6</Subscript>][Mn(<Emphasis Type="Italic">S</Emphasis>)-<Emphasis Type="Italic">pn</Emphasis>H(H<Subscript>2</Subscript>O)](H<Subscript>2</Subscript>O) single crystals

The effect of dehydration-induced structural transitions on the ferrimagnetic resonance spectra of the [Cr(CN)₆][Mn(S)-pnH(H₂O)](H₂O) chiral molecular magnet has been studied for three crystalline modifications. The differences in the anisotropy field and exchange interaction constants due to the change in the dimensionality of the magnetic ordering upon the phase transitions have been established. In the dehydrated amorphous phase, apart from the ferrimagnetic resonance, additional isotropic magnetic resonance lines corresponding to the spin-glass state have been revealed.     

Some magnetic properties of Mn(TCNQ)2

The EPR spectra of polycrystalline Mn(TCNQ)₂·3H₂O and Mn(TCNQ?d₄)₂ have been studied as a function of temperature from 1.5 K to 375 K. At very low temperatures the line width indicates an exchange interaction similar to that of other manganese salts. At 77 K and above the line is narrowed and shifted most likely through interaction with the electronic motion. The bulk susceptibility was measured at room temperature. The observed μ_eff=4.66 implies an antiferromagnetic coupling of the manganese ions.     

Synthesis and optical properties for crystals of a novel organic semiconductor [ Ni(Cl) 2{(Ph 2P) 2CHC(R 1R 2)NHNH 2}]

In this investigation, the synthesis process of the apyrazole derivative for diphenylphosphino-methane hydrazine complexes [ Ni(Cl)₂{(Ph₂P)₂CHC(R₁R₂)NHNH₂}] was reported, and the obtained crystals were analyzed by X-ray diffraction. As a result of the growth process, a set of complexes were formed. The structures of these complexes are discussed on the basis of Elemental analysis (EA), IR, ¹H-NMR, ³¹P-NMR spectroscopic data and FAB mass spectra. The compound under investigation shows typical semiconductor behavior as a result of delocalization of the π-electrons in the structure. The reflectance and transmittance spectra for the crystals were measured and analyzed in the incident photon energy range 1.29 to 3.93 eV and in the temperature range 77 to 300 K. The optical study revealed that the optical transition is direct allowed. Below the absorption edge, the refractive index as a function of wavelength was determined in the low energy region of the used incident photon energy range. From the refractive index-wavelength variations, the oscillator and dispersion energies of the refractive index for the obtained crystals were determined. The static refractive index and static dielectric constant were evaluated.     

Fine structure in the low temperature luminescence of Zn2SiO4:Mn and Mg4Ta2O9:Mn

The luminescence of powder samples of the well-known green-emitting Zn₂SiO₄:Mn and the red-emitting Mg₄Ta₂O₉:Mn phosphor shows a considerable fine structure at 4° K in appropriately prepared samples containing a sufficiently low Mn concentration. For (Zn_1-xMn_x)₂SiO₄ (0.0005?x?0.05) two sharp lines were found which are interpreted as due to zero phonon transitions between the ⁴T₁ and ⁶A₁ levels of Mn²⁺ ions on the two crystallographically different zinc sites. The remaining structure is ascribed to vibronic sidebands. The decay times of the luminescence bands associated with the two sites differ; they are 12 and 15 ms for the high and low energy bands respectively. The experimental results of Vlam are confirmed by our data. In addition some (Zn_1-yBe_y)₂SiO₄:Mn (0.025? y ?1) samples were investigated. In Mg₄Ta₂O₉:Mn two zero phonon lines could be identified, indicating that in this material Mn²⁺ is distributed over two inequivalent Mg sites. Most of the phonon replicas were found at intervals of 15 meV. Raman scattering experiments showed that this energy corresponds to one of the lattice vibrations. The decay time of this luminescence band is 1.0 ms.     

The heat capacity of the layer compounds (CH3CH2CH2NH3)2MnCl4 and (CH3CH2CH2NH3)2CdCl4 from 10 K TO 300 K

The heat capacity of the layer compounds tetrachlorobis (n-propylammonium) manganese II and tetrachlorobis (n-propylammonium) cadmium II, (CH₃CH₂CH₂NH₃)₂MnCl₄ and (CH₃CH₂CH₂NH₃)₂CdCl₄ respectively, has been measured over the temperature range 10 K ?T ? 300 K.Two known structural phase transitions were observed for the Mn compound in this temperature region: at T = 112.8 ± 0.1 K (ΔH_t= 586 ± 2 J mol^?1; ΔS_t = 5.47 ± 0.02 J K^?1mol^?1) and at T =164.3 ± (ΔH_t = 496 ± 7 J mol^?1; ΔS_t =3.29 ± 0.05 J K^?1mol^?1). The lower transition is known to be from a monoclinic structure to a tetragonal structure, while the upper is from the tetragonal phase to an orthorhombic one. From comparison with the results for the corresponding methyl Mn compound it is deduced that the lower transition primarily involves changes in H-bonding while the upper transition involves motion in the propyl chain.A new structural phase transition was observed in the Cd compound at T= 105.5 ± 0.1 K (ΔH_t= 1472.3 ± 0.1 J mol^?1; ΔS_t = 13.956 ± 0.001 J K^?1mol^?1), in addition to two transitions that have been observed previously by other techniques. The higher of these transitions(T = 178.7 ± 0.3 K; ΔH_t = 982 ± 4 J mol^?1 ΔS_t = 6.16 ± 0.02 J K^? mol^?1) is known to be between two orthorhombic structures, while the structural changes at the lower transition (T= 156.8 ± 0.2 K; ΔH_t = 598 ± 5 J mol^?1, ΔS_t = 3.85 ± 0.03 J K^?1 mol^?1) and at the new transition are not known. It is proposed that these two transitions correspond respectively to the tetragonal to orthorhombic and monoclinic to tetragonal transitions in the propyl Mn compounds.In addition to the structural phase transitions (CH₃CH₂CH₂NH₃)₂MnCl₄ magnetically orders at t? 130 K. The magnetic contribution to the heat capacity is deduced from the heat capacity of the corresponding diamagnetic Cd compound and is of the form expected for a quasi 2-dimensional Heisenberg antiferromagnet.     

Metal-insulator transition in the spinel-type Cu(Ir1−xCrx)2S4 system

A normal thiospinel CuIr₂S₄ exhibits a temperature-induced metal-insulator (M-I) transition around 230 K with structural transformation, showing hysteresis on heating and cooling. On the other hand, CuCr₂S₄ has the same normal spinel structure without the structural transformation. CuCr₂S₄ has been found to be metallic and ferromagnetic with the Curie temperature T_c~377 K. In order to see the effect of substituting Cr for Ir on the M-I transition, we have carried out a systematic experimental study of electrical and magnetic properties of Cu(Ir_1−xCr_x)₂S₄. The M-I transition temperature shifts to lower temperature with increasing Cr-concentration x and this transition is not detected above x~0.05. The ferromagnetic transition temperature decreases as x is decreased and the transition does not occur below x~0.20.     

XPS study of the exchange-splitting in the s-levels of Mn and R in RMn2Si2 (R = La to Nd,Sm and Gd)

Exchange (or multiplet) splitting, ΔE_s of the 3s core-level of Mn in RMn₂Si₂ (R = La to Nd, Sm and Gd) has been observed using XPS technique. The measured value of ΔE_s is used to determine the magnetic moment on Mn ion in RMn₂Si₂. ΔE_s has also been measured for the 4s and 5s levels of R in RMn₂Si₂ and it is found that the value of ΔE_s increases with increase in the number of unpaired spins (La to Gd).     

Study of Tensor Correlations in 4He via the 4He(p, dp)d and 4He(p, dp)pn Reactions

Tensor correlations in ⁴He were studied via the (p, dp) reaction at the incident energy of 392 MeV with a focus on spin configurations of correlated pn pairs in ⁴He at high relative momenta ${(P_{\rm rel}^{\rm cor})}$ . The preliminary results show that the correlated pn pair at ${P_{\rm rel}^{\rm cor} = 310 {\rm MeV/c}}$ predominantly has the channel spin S = 1, which is consistent with the characteristics of tensor correlations.     

Investigation of the solid solution series 2(MnX)-CuInX2 (X=S, Se)

(2MnX)_x(CuInX₂)_1−x with X=S and Se were prepared by solid state reaction from the end members α-MnS, β-MnS and CuInS₂ in the range 0<x≤0.2 (≤0.6 for β-MnS) as well as MnSe and CuInSe₂ in the range 0<x≤0.1. Mixed crystals with 0≤x≤0.1 crystallize in the tetragonal chalcopyrite type structure, (2α-MnS)_x(CuInS₂)_1−x samples with 0.1<x≤0.2 and (2β-MnS)_x(CuInS₂)_1−x samples up to x=0.6 consist of two phases, occuring as tetragonal domains (x∼0.1 for X=S) within a cubic matrix with zinc-blende type structure (x∼0.4 for X=S), indicating a miscibility gap. For tetragonal single phase samples the band gap energy, the lattice constants and the anion parameter have been determined. The first and the latter ones show a different composition dependent behaviour caused by the modification of the MnS (α-MnS with NaCl type structure, β-MnS with zinc-blende type structure) used during the synthesis. Additionally a CuMn_xIn_1−xS₂ powder sample, in which Mn substitutes the M^III site, was investigated. The SQUID measurements revealed a well-distinct magnetic transition between 15 and 16 K as well as ferromagnetic-like hysteresis loops pronounced for temperatures below the transition temperature. Below this temperature a clear splitting between the zero field cooling (ZFC) and the field cooling (FC) curves indicate to the existence of a long-range magnetic ordering phenomenon. This behaviour was not found in the other samples were Mn substitutes both sites M^I as well as M^III.     

Magnetic properties and hydrostatic pressure effect on the curie temperature of (Co,Mn)2B amorphous alloys

The temperature dependence of magnetization and magnetic susceptibility and hydrostatic pressure effect on the Surie temperature (dT_c/dP) are measured for (Co_1-xMn_x)₂B (0?x?0.4) amorphous alloys and the results are compared with those of crystalline compounds with the same composition. The Curie temperature decreases linearly with an increasing Mn content but magnetization shows a maximum around x=0.15. The reciprocal magnetic susceptibility of all the prepared alloys obeys the Curie-Weiss law above T_c. The magnitude of the negative value of dT_c/dP decreases linearly with increasing x from about 1.1 K/kbar (x=0) to zero (x=0.4), the composition dependence of which is opposite to that of the crystalline compound. The composition dependence of the average magnetic moment per transition metal atom and the Curie temperature and dT_c/dP are analysed on the basis of the local environment and the pair order interaction mode, respectively.     

Self-assembled one-pot synthesis of red luminescent CdS:Mn/Mn(OH)2 nanoparticles

We report a novel method of growing red luminescent (635 nm) Mn-doped CdS (CdS:Mn) nanoparticles capped by an inorganic shell of Mn(OH)₂. CdSO₄, Na₂S₂O₃ and Mn(NO₃)₂ were used as the precursors, and thioglycerol (C₃H₈O₂S) was employed as the capping agent and also the catalyst of the reaction. Using these materials resulted in very slow rate of the reaction and particles growth. The self-assembled one-pot process was performed at pH of 8 and Mn:Cd ratio of 10, and took about 10 days for completion. CdS:Mn nanoparticles are slowly formed in the first day of the process; however, the luminescence is weak. After 7 days, the solution turns white turbid through the formation of additional particles, which precipitate on the walls on the next day. At this stage, a relatively strong red luminescence at 635 nm appears from transparent solution of the CdS:Mn nanoparticles. The white deposit on the walls turns to dark-brown color and luminescence increases on the 9th day. Finally, the CdS:Mn nanoparticles agglomerate and precipitate out of the solution on 10th day. X-ray diffraction and optical spectroscopy showed crystalline phase CdS nanoparticles with an average size of 3.6 nm. We explain the luminescence enhancement based on the formation of a Mn(OH)₂ shell on the surface of the CdS:Mn nanoparticles during the precipitation stage. This can passivate the S dangling bonds located on the particles surface. As the surface Cd sites are previously capped with thioglycerol molecules, a complete surface passivation is achieved and results in emergence of high-intensity luminescence.     

On the n-p phase transitions in Mn1-x Cu x Cr2S4

The Seebeck coefficient for polycrystalline samples of: 1. Mn_1-x Cu _x Cr₂S₄ (0.0 ≤ x < 1.00) at 313 K and 2. MnCr₂S₄ between 313–393 K is presented. The electrical resistivity of Mn_1-x Cu _x Cr₂S₄ as a function of x at the room temperature is also presented. The n-p phase transition is observed in two cases: 1. on changing x at constant temperature (313 K) for 0.0 ≤ x ≤ 0.1 and 2. on changing temperature for MnCr₂S₄ at about 326 K. The first case is probably connected with the noncollinear ferromagnetic interaction of the chromium 3+ and 4+ ions. The second case follows from the strong ferrimagnetic interaction of the Mn²⁺ and Cr³⁺ ions in pure MnCr₂S₄.     

Luminescence of Ca-doped (Y1-x, Gdx)2O2S

Broad-band yellow luminescence peaking around 575–595 nm has been found in Ca-doped (Y_1-x, Gd_x)₂O₂S. The doping of Ca into Y₂O₂S with the concentration up to 1 mol% is possible. At the optimum concentration (about 0.2 mol%), the cathodoluminescence brightness of Ca-doped Y₂O₂S is 10% of that of yellow-emitting (Zn, Cd)S: Ag.The emission peak is 575 nm in Y₂O₂S: Ca and 595 nm in Gd₂O₂S: Ca. The phosphor exhibits strong thermoluminescence after UV excitation at 77 K. In (Y_1-x, Gd_x)₂O₂S, neither emission spectra nor the temperatures of thermal glow peak depend on x, indicating localized characters of the traps concerned. The photoluminescence is slow in buildup and persistent in decay. These results are explained by a model: the substitution of Y(Gd) by Ca creates acceptor levels in which holes are captured, giving rise to subsequent radiative recombination with excited electrons. Trapped electrons recombine with mobile holes nonradiatively, but exhibit thermoluminescence with high efficiency when they are thermally released.     

Preparation and crystallographic data of the pyrochlores Gd2MSbO7 (M = Cr,Mn, Fe,In)

Polycrystalline Gd₂MSbO₇ (M =Cr,Mn,Fe,In) have been prepared from M₂O₃ (M = Cr, Fe, In), Mn metal and Sb₂O₃ at different temperatures above 1470 K. Gd₂MSbO₇ (M = Cr, Mn,Fe,In) are cubic, pyrochlore-type compounds, space group Fd3&#x0304;m (No. 227), Z = 8, a values varying from 10.266 (1) (M = Cr) to 10.486 (1) Å (M = In). For Gd in 16(c), M and Sb at random in 16(d) sites, oxygen atoms in 8(a) and 48(?) positions and x, oxygen positional parameter, equal to 0.412 (M = In) up to 0.425 (M = Mn), origin at center (3&#x0304;m), R values from 0.032 (M = In) to 0.041 (M = Mn) are obtained. X-ray powder diffraction data and interatomic distances are given.     

Magnetic and electrical properties of RCo2Mn (R=Ho, Er) compounds

The RCo₂Mn (R=Ho and Er) alloys, crystallizing in the cubic MgCu₂-type structure, are isostructural to RCo₂ compounds. The excess Mn occupies both the R and the Co atomic positions. Magnetic, electrical and heat capacity measurements have been done in these compounds. The Curie temperature is found to be 248 and 222 K for HoCo₂Mn and ErCo₂Mn, respectively, which is considerably higher than that of the corresponding RCo₂ compounds. Saturation magnetization values in these samples are less compared to that of the respective RCo₂ compounds.     

The influence of substrate temperature on electrical properties of Cu/CdS/SnO2 Schottky diode

Polycrystalline CdS samples on the SnO₂ coated glass substrate were obtained by vacuum evaporation method at low substrate temperatures (T_S=200 and 300 K) instead of the commonly used vacuum evaporation at high substrate temperatures (T_S>300 K). X-ray diffraction studies showed that the textures of the films are hexagonal with a strong (0 0 2) preferred direction. Circular Cu contacts were deposited on the upper surface of the CdS thin films at 200 K by vacuum evaporation. The effects of low substrate temperature on the current-voltage (I-V) characteristics of the Cu/CdS/SnO₂ structure were investigated in the temperature range 100-300 K. The Cu/CdS (at 300 K)/SnO₂ structure shows exponential current-voltage variations. However, I-V characteristics of the Cu/CdS (at 200 K)/SnO₂ structure deviate from exponential behavior due to high series resistance. The diodes show non-ideal I-V behavior with an ideality factor greater than unity. The results indicate that the current transport mechanism in the Cu/CdS (at 300 K)/SnO₂ structure in the whole temperature range is performed by tunneling with E₀₀=143 meV. However, the current transport mechanism in the Cu/CdS (at 200 K)/SnO₂ structure is tunneling in the range 200-300 K with E₀₀=82 meV.     

Thermoelectric power of the vitreous electrolyte (AgI)0.79(Ag2O.B2O3)0.21

We have determined the thermoelectric power ? of the high ionic conductivity glass (AgI)_0.79(Ag₂O.B₂O₃)_0.21; ? is negative throughout the investigated T range, 320–500 K. The heat of transport of the mobile Ag⁺, Q_Ag, taken as the slope of the straight line fitting ? versus 1/T, is quite lower than the activation energy obtained from conductivity data, viz. Q_Ag = 2.81 kcal/mole^-1 < E_act = 4.34 kcalmole^-1. To circumvent this discrepancy, the analysis of the experimental data is carried out as follows: (i) it is supposed that Q_Ag = E_act in agreement with the free ion theory for solid electrolytes; (ii) the vibrational part of the silver ion entropy, S(Ag⁺, vib), is assumed to be equal to the entropy of silver, S(Ag); (iii) on the ground of a structural model for this kind of glasses, the ideal configurational entropy of the mobile Ag⁺, S(Ag⁺, conf)_id, is evaluated through a statistical approach. The ideal ionic entropy is defined as S(Ag⁺)_id = {S(Ag⁺, vib) + S(Ag⁺, conf)_id}; (iv) the difference {S(Ag⁺)_exp - S(Ag⁺)_id} is viewed as an excess entropy and is described according to the classical model of the regular solutions.     

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

Silver antimony selenide (AgSbSe₂) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb₂S₃), silver selenide (Ag₂Se), selenium (Se) and silver (Ag). Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃, Ag₂Se from a solution containing AgNO₃ and Na₂SeSO₃ and Se thin films from an acidified solution of Na₂SeSO₃, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 °C in vacuum (10⁻³ Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe₂ or AgSb(S,Se)₂ depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe₂/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V_oc = 435 mV and J_sc = 0.08 mA/cm² under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe₂ as an absorber material by a non-toxic selenization process is achieved.