Near IR laser light visualizators using nonlinear GaSe and other layered crystallites

Two methods of preparation of the devices for visualization of pulsed and continuous near-IR (near infrared) are described and the results of conversion of pulsed and continuous IR (800–1360 nm) laser radiation into the visible range of spectra (400–680 nm) by using a transparent substrate covered with the particles (including nanoparticles) of effective nonlinear materials of GaSe _x S_{1 − x} (0.2 ≤ x ≤ 0.8) are presented. Converted light can be detected in transmission or reflection geometry as a visible spot corresponding to the real size of the incident laser beam. Developed device structures can be used for checking if the laser is working or not, for optical adjustment, for visualization of distribution of laser radiation over the cross of the beam and for investigation of the content of the laser radiation. Low energy (power density) limit for visualization of the IR laser pulses with 2–3 ps duration for these device structures are: between 4.6–2.1 μJ (3 × 10⁻⁴−1 × 10⁻⁴ W/cm²) at 1200 nm; between 8.4–2.6 μJ (4.7 × 10⁻⁴−1.5 × 10⁻⁴ W/cm²) at 1300 nm; between 14.4–8.1 μJ (8.2 × 10⁻⁴–4.6 × 10⁻⁴ W/cm²) at 1360 nm. Threshold damage density is more than 10 MW/cm² at λ = 1060 nm, pulse duration τ = 35 ps. The results are compared with commercially existing laser light visualizators.     

LD end-pumped c-Cut Nd:YVO<Subscript>4</Subscript>/KTP self-Raman laser at 560 nm

Intra-cavity sum frequency generation (SFG) of c-cut Nd:YVO₄ self-Raman laser was investigated for the first time. A 4 × 4 × 10 mm³ KTP crystal with a type-II phase-matching cutting angle (θ = 83.4°, φ = 0°) was used for SFG between the fundamental light at 1066 nm and first-Stokes light at 1178 nm. The laser system with different curvature radii of output couplers and different pulse repetition frequencies were investigated. At a pump power of 14 W and pulse repetition frequency of 20 kHz, the average output power of yellow-green laser at 560 nm up to 840 mW was achieved, corresponding to a slope efficiency of 7.6% and a conversion efficiency of 6% with respect to diode pump power.     

Optical properties of Tm,Mg:LiTaO3 laser crystal

A Tm, Mg co-doped LiTaO₃ crystal has been grown by Czochralski method. Room temperature polarized absorption spectra and fluorescence spectrum of the Tm, Mg:LiTaO₃ crystal were measured and analyzed. The maximum absorption cross-section is 6.0791 × 10⁻²⁰ cm² at around 790 nm with full width at half maximum of 5 nm. The emission cross-section of ³ F ₄ manifold was 2.2 × 10⁻²⁰ cm². The spectroscopic parameters of Tm³⁺ ion were calculated by applying the Judd-Ofelt approach, and the intensity parameters Ω₂, Ω₄, and Ω₆ were obtained to be 7.71 × 10⁻²⁰, 1.09 × 10⁻²⁰, and 1.16 × 10⁻²⁰ cm², respectively. The branching ratios and radiative lifetimes were also presented and the radiative lifetime of Tm^{3+ 3} F ₄ → ³ H ₆ transition is 968.3 μs. The results were also analyzed and compared with other Tm³⁺ doped hosts.     

Thin TiO2 grown by metal–organic chemical vapor deposition on (NH4)2S x -treated InP

The electrical characteristics of thin TiO₂ films prepared by metal–organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO₂ film of 4.7 nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8×10⁻² and 1.1×10⁻⁴ A/cm² at +2 V bias and 1.6×10⁻¹ and 8.3×10⁻⁴ A/cm² at −2 V bias. The lower leakage currents of TiO₂ with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5×10¹³ cm², respectively. The lowest mid-gap interface state density is around 7.6×10¹¹ cm⁻² eV⁻¹. The equivalent oxide thickness is 0.52 nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6 nm and reaches 9.3 MV/cm at 2.5 nm.     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

The growth,thermal and nonlinear optical properties of single-crystal GdAl3(BO3)4

The nonlinear optical single-crystals GdAl₃(BO₃)₄ (GAB), space group R32, were grown by the top-seed solution growth (TSSG) method. The thermal properties and the nonlinear optical characteristics have been investigated. The two principal coefficients of thermal expansion along (100) and (001) were measured to be 5.30 × 10⁻⁶, 1.88 × 10⁻⁵ K⁻¹. The transmission spectrum was measured and the second-harmonic generation (SHG) was presented. By way of our designed cross superimposed laser crystal multiplier, the frequency doubling laser at wavelength 457.5 nm was measured to be 18.2 mW and the facular properties indicated the multiplier contributed to the improvement of the frequency doubling conversion efficiency.     

Atomic frequency offset locking in a Λ type three-level Doppler broadened Cs system

We here present a comparative study of frequency stabilities of pump and probe lasers coupled at a frequency offset generated by coherent photon-atom interaction. Pump-probe spectroscopy of the Λ configuration in D₂ transition of cesium is carried out to obtain sub-natural (∼2 MHz) electromagnetically induced transparency (EIT) and sub-Doppler (∼10 MHz) Autler-Townes (AT) resonance. The pump laser is locked on the saturated absorption spectrum (SAS, ∼13 MHz) and the probe laser is successively stabilized on EIT and AT signals. Frequency stabilities of pump and probe lasers are calculated in terms of Allan variance σ(2,τ) by using the frequency noise power spectrum. It is found that the frequency stability of the probe stabilized on EIT is superior (σ∼2×10⁻¹³) to that of SAS locked pump laser (σ∼10⁻¹²), whereas the performance of the AT stabilized laser is inferior (σ∼6×10⁻¹²). This contrasting behavior is discussed in terms of the theme of conventional master-slave offset locking scheme and the mechanisms underlying the EIT and sub-Doppler AT resonances in a Doppler broadened atomic medium.     

Measurement of the absolute Raman scattering cross sections of sulfur and the standoff Raman detection of a 6‐mm‐thick sulfur specimen at 1500 m

The absolute Raman scattering cross sections (σ_RS) for the 471, 217, and 153 cm⁻¹ modes of sulfur were measured as 6.0 ± 1.2 × 10⁻²⁷, 7.7 ± 1.6 × 10⁻²⁷, and 1.2 ± 0.24 × 10⁻²⁶ cm² at 815, 799, and 794 nm, respectively, using a 785‐nm pump laser. The corresponding values of σ_RS at 1120, 1089, and 1081 nm were determined to be 1.5 ± 0.3 × 10⁻²⁷, 1.2 ± 0.24 × 10⁻²⁷, and 1.2 ± 0.24 × 10⁻²⁷ cm² using a 1064‐nm laser. A temperature‐controlled, small‐cavity (2.125 mm diameter) blackbody source was used to calibrate the signal output of the Raman spectrometers for these measurements. Standoff Raman detection of a 6‐mm‐thick sulfur specimen located at 1500 m from the pump laser and the Raman spectrometer was made using a 1.4‐W, CW, 785‐nm pump laser. Copyright © 2010 John Wiley & Sons, Ltd.     

Influence of Ar, Ne, Xe, and CCl4 impurities on luminescence kinetics of Cd II ions (5s22D5/2-5p2P3/2 transition, λ = 441.6 nm) in He-Cd mixture

The luminescence kinetics of the Cd II ion at a wavelength of 441.6 nm has been studied experi-mentally in a high-pressure He-Cd mixture in the presence of Ar, Ne, Xe, and CCl₄ impurities. Cadmium ions were excited through the bombardment of a cadmium foil heated up to 240°C by a pulsed electron beam with an electron energy of 150 keV, a pulse duration of 3 ns, and a current of 500 A. The constants of collisional quenching of the Cd II 5s ^{2 2} D _5/2 level by Ar, Ne, and Xe atoms and CCl₄ molecules and the integral luminescence quenching constants of this level in the helium medium by these impurity gases have been determined. The constants of collisional quenching appeared to be 8.1 × 10⁻¹² (Ar), 1.2 × 10⁻¹² (Xe), 1.5 × 10⁻¹³ (Ne), and 1.8 × 10⁻¹⁰ cm³/s (CCl₄, for λ = 325 nm), while the integral constants were found to be, respectively, 4.1 × 10⁻¹¹, 3.4 × 10⁻¹¹, 9.5 × 10⁻¹², 1.4 × 10⁻⁹ cm³/s for Ar, Ne, Xe, and CCl₄ at a buffer gas pressure of 1 atm. Original Russian Text ? A.I. Miskevich, Liu Tao, 2009, published in Optika i Spektroskopiya, 2009, Vol. 107, No. 1, pp. 45–49.     

Silica coating of Co–Pt alloy nanoparticles prepared in the presence of poly(vinylpyrrolidone)

This article describes a method for silica coating of Co–Pt alloy nanoparticles prepared in the presence of poly(vinylpyrrolidone) (PVP) as a stabilizer. The Co–Pt nanoparticles were prepared in an aqueous solution at 25–80 °C from CoCl₂ (3.0 × 10⁻⁴ M), H₂PtCl₆ (3.0 × 10⁻⁴ M), PVP (0–10 g/L), and NaBH₄ (4.8 × 10⁻³–2.4 × 10⁻² M). The silica coating was performed for the Co–Pt nanoparticle colloid containing the PVP ([Co] = [Pt] = 3.0 × 10⁻⁵ M) at 25 °C in (1/4) (v/v) water/ethanol solution with tetraethoxyorthosilicate (TEOS) (7.2 × 10⁻⁵–7.2 × 10⁻³ M) and ammonia (0.1–1.0 M). Silica particles, which had an average size of 43 nm and contained multiple cores of Co–Pt nanoparticles with a size of ca. 8 nm, were produced at 1.4 × 10⁻³ M TEOS and 0.5 M ammonia after the preparation of Co–Pt nanoparticles at 80 °C, 5 g/L PVP, and 2.4 × 10⁻² M NaBH₄. Their core particles were fcc Co–Pt alloy crystallites. Their saturation magnetization was 2.0-emu/g sample, and their coercive field was 12 Oe.     

CW CO2-laser annealing of arsenic implanted silicon

CW CO₂-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm⁻² for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm⁻² and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×10¹⁵ cm⁻² was obtained for 1×10¹⁶ cm⁻² implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min.     

K<Subscript><Emphasis Type="Italic">α</Emphasis></Subscript> x-ray emission characterization of 100 Hz, 15 mJ femtosecond laser system with high contrast ratio

We report K _α x-ray production with a high energy (110 mJ per pulse at 800 nm before compression/15 mJ at 400 nm after compression), high repetition rate (100 Hz), and high pulse contrast (better than 10⁻⁹ at 400 nm) laser system. To develop laser-based x-ray sources for biomedical imaging requires to use high-energy and high-power ultrafast laser system where compression is achieved under vacuum. Using this type of laser system, we demonstrate long-term stability of the x-ray yield, conversion efficiency higher than 1.5×10⁻⁵ with a Mo target, and the x-ray spot size close to the optical focal spot. This high-repetition K _α x-ray source can be very useful for x-ray phase-contrast imaging. S. Fourmaux and C. Serbanescu contributed equally to this work.     

Quasi-point incoherent ArF<Superscript>∗</Superscript> excimer emission source at 193 nm using a laser-produced plasma

We have demonstrated proof-of-principle of an incoherent ArF^∗ emission source with a quasi-point emission geometry using a laser-produced plasma in an Ar/F₂/He/Ne mixed gas. The VUV emission characteristics, such as the emission size, were dependent on those of the plasma-initiating laser. The average emission power was 10 μW at a repetition rate of 10 Hz at 193 nm. The average power conversion efficiency of the 193-nm emission from the plasma-initiating Nd:YAG laser was 6.3×10⁻⁶. The average emission power at 193 nm was proportional to that of the plasma-initiating laser, indicating the scaling of the emission source.     

Application of 940 nm high-power DFB lasers for line-broadening measurements at normal pressure using a robust and compact setup

High-power distributed-feedback (DFB) lasers for the wavelength range near 940 nm (i.e. about 10,600 cm⁻¹) were used for line-broadening measurements of individual rotational-vibrational absorption lines of water vapour at atmospheric pressure using a minimalist set-up. The laser has a maximum output power larger than 500 mW. Over the whole power range from threshold to maximum power, it operates in single mode operation with a tuning range of 4.7 nm, i.e. 50 cm⁻¹, at 20°C. With an emission line-width ≤2 MHz (0.66×10⁻⁴ cm⁻¹), the device is well suited for high-resolution spectroscopy.     

Spectrofluorimetric Assessment of Chlorzoxazone and Ibuprofen in Pharmaceutical Formulations by using Eu-Tetracycline HCl Optical Sensor Doped in Sol–Gel Matrix

A novel, simple, sensitive and selective spectrofluorimetric method was developed for the determination of trace amounts of chlorzoxazone and Ibuprofen in pharmaceutical tablets using optical sensor Eu-Tetracycline HCl doped in sol–gel matrix. The chlorzoxazone or Ibuprofen can remarkably enhance the luminescence intensity of Eu-Tetracycline HCl complex doped in a sol–gel matrix in dimethylformamide (DMF) at pH 9.7 and 6.3, respectively, λ_ex = 400 nm. The enhancing of luminescence intensity peak of Eu-Tetracycline HCl complex at 617 nm is proportional to the concentration of chlorzoxazone or Ibuprofen a result that suggested profitable application as a simple optical sensor for chlorzoxazone or Ibuprofen assessment. The dynamic ranges found for the determination of chlorzoxazone and Ibuprofen concentration are 5 × 10⁻⁹–1 × 10⁻⁴ and 1 × 10⁻⁸–7 × 10⁻⁵ mol L⁻¹, and the limit of detection (LOD) and quantitation limit of detection (LOQ) are 3.1 × 10⁻¹⁰ , 9.6 × 10⁻¹⁰ and 5.6 × 10⁻¹⁰, 1.7 × 10⁻⁹ mol L⁻¹, respectively.     

Visualization of focusing–refocusing cycles during filamentation in BaF<Subscript>2</Subscript>

Filamentation occurs within a 1.5 cm-long crystal of BaF₂ during the propagation of intense, ultrashort (40 fs) pulses of 800 nm light; a systematic study as a function of incident power enables us to extract quantitative information on laser intensity within the condensed medium, the electron density and the six-photon absorption cross section. At low incident power, a single filament is formed within the crystal; two or more filaments are observed along the direction transverse to laser propagation at higher incident powers. Further, due to fluorescence from six-photon absorption (6PA), we are able to map the intensity variation in the focusing–refocusing cycles along the direction of laser propagation. At still higher incident powers, we observe splitting of multiple filaments. By measuring the radius (L _min) of single filament inside BaF₂, we obtain estimates of peak intensities (I _max) and electron densities (ρ _max) to be 3.26×10¹³ W cm⁻² and 2.81×10¹⁹ cm⁻³, respectively. Use of these values enables us to deduce that the 6PA cross-section in BaF₂ is 0.33×10⁻⁷⁰ cm¹² W⁻⁶ s⁻¹.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Polarisation resistance of the O2, Au/O2− and H2-H2O, Au/O2− electrode systems

Gold electrodes with known contact geometries were studied using impedance spectroscopy. From these data it was possible to determine the specific polarisation conductivity per unit length of three-phase boundary (TPB). The values were found to be (3÷22)×10⁻⁴ S·cm⁻¹ dependent on the electrode history in pure oxygen at 977 °C and 2×10⁻⁶ S·cm⁻¹ at 977 °C in “pure” hydrogen (P_O2=10⁻²⁰ atm at 1001 °C). The results are compared with previous data obtained for platinum electrodes.     

Cilostazol determination by the enhancement of the green emission of Tb3+ optical sensor

The efficiency of excited-state interaction between Tb³⁺ and the industrial product Cilostazol (CIL) has been studied in different solvents. High luminescence intensity peak at 545 nm of terbium complex in acetonitrile was obtained. The photophysical properties of the green emissive Tb³⁺ complex have been elucidated, the terbium was used as optical sensor for the assessment of CIL in the pharmaceutical tablets and body fluids at pH 3.1 and λ_ex = 320 nm with a concentration range 1.0 × 10⁻⁹–1.0 × 10⁻⁶ mol L⁻¹ of CIL, correlation coefficient of 0.998 and detection limit of 7.5 × 10⁻¹⁰ mol L⁻¹.     

Growth and laser properties of Nd<Superscript>3+</Superscript>:Sr<Subscript>6</Subscript>YSc(BO<Subscript>3</Subscript>)<Subscript>6</Subscript> crystal

The crystal of Nd³⁺:Sr₆YSc(BO₃)₆ with dimensions of O 19×42 mm³ was grown by the Czochralski method. It’s spectral and laser properties have been investigated. The absorption cross section is 1.47×10^-20 cm² with a FWHM 12.0 nm at 807 nm, the emission cross section is 1.57×10^-19 cm² at 1060 nm, and the fluorescence lifetime is 76 μs at room temperature. The maximum laser output is 25.7 mJ at 1.06 μm pumped by a single Xenon flash lamp and the overall and average slope efficiencies are 0.12% and 0.09%, respectively. The laser energy threshold value is 1.28 J. PACS 42.55.Rz; 42.70.Hj; 78.20.-e