Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

We propose a new growth scheme of digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG) using metalorganic and hydride precursors for the growth of Al_xGa_1−xN layers with high-Al content at relatively low temperatures. The growth of high-quality, high-Al content Al_xGa_1−xN layers (x_Al>50%) that are composed of AlN and Al_yGa_1−yN monolayers on AlN/sapphire template/substrates by DA-MPEG was demonstrated. The overall composition of the ternary Al_xGa_1−xN material by DA-MPEG can be controlled continuously by adjusting the Column III mole fraction of the atomic Al_yGa_1−yN sub-layer. X-ray diffraction and optical transmittance results show that the AlGaN materials have good crystalline quality. The surface morphology of DA-MPEG AlGaN samples measured by atomic force microscopy are comparable to high-temperature-grown AlGaN and are free from surface features such as nano-pits.     

Crystallization behaviours ofCo100−1(x+y)NbxBy amorphous alloys

The crystallization behaviours of Co_100?1(x+y)Nb_xB_y amorphous alloys were investigated by means of differential thermal analysis and a conventional X-ray diffractometer. The crystallization sequences are discussed in terms of the equilibrium phase diagram of the ternary alloy system.Assuming crystallization occurs as a result of nucleation and growth, the stabilizing effect of eutectic phase separation on the crystallization is shown by introducing the effective free energy of the critical nucleus.     

Precipitation of In2O3 nano-crystallites from glasses in the system Na2O/B2O3/Al2O3/In2O3

Glasses in the system Na₂O/B₂O₃/Al₂O₃/In₂O₃ were melted and subsequently tempered in the range from 500 to 700 °C. Depending on the chemical composition, various crystalline phases were observed. From samples without Al₂O₃, In₂O₃ could not be crystallized from homogeneous glasses, because either spontaneous In₂O₃ crystallization occurred during cooling, or other phases such as NaInO₂ were formed during tempering. The addition of alumina, however, controlled the crystallization of In₂O₃. Depending on the crystallization temperature applied, the crystallite sizes were in the range from 13 to 53 nm. The glass matrix can be dissolved by soaking the powdered glass in water. This procedure can be used to prepare nano-crystalline In₂O₃-powders.     

New transition metal fluoride glasses isolated in the PbF2MtIIF2MtIIIF3 systems

New glasses have been prepared in the PbF₂M_t^IIF₂M_t^IIIF₃ systems (m_t^II = Mn²⁺, Fe²⁺, Co²⁺, Ni²⁺, Cu²⁺, Zn²⁺; M_t^III = Fe³⁺, V³⁺, Cr³⁺, Ga³⁺). The extent of the vitreous area is shown in a PbF₂MnF₂FeF₃ diagram. Thermal properties have been measured for all samples. Some of these glasses are very transparent over a wide range of wavelengths (from 250–12 000 nm). The sixfold coordination of transition metal ions has been established by spectroscopic investigations. The structure of the glasses is discussed on the basis of a random corner-sharing of MF₆ octahedra.     

The Mott T−14 law from the rate equation formalism

The Mott $\text{T}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>4</mtext>}}$ law for the dc hopping conductivity for amorphous semiconductors is derived from the rate equation formalism by using the methodology of Butcher and Hayden. This formula is then fitted to the experimental data for a-Si, a-Ge, partially compensated heavily doped n-type Ge and polymer PPIB at 640 atmospheric pressures. It is found that the “simplified Butcher formula” approximately fits the experimental data for a-Si and a-Ge. The values of the density of states at the Fermi level calculated from the expression for the prefactor of this formula are much more reasonable values than those obtained from the original Mott formula. The origin of this significant improvement is found to lie not in improved approximations but in the choice of the values of the characteristics frequency R₀.     

Crystal growth of MnxCd1-xGa2Se4 (0.00 x 0.20)

Crystals of Mn_xC_1-xGa₂Se₄ (0.00 x 0.20) have been grown the vapour phase by chemical transport modified by the t ime variation of the temperature profile procedure. Crystals with dimensions up to 15 × 2 × 2 mm were obtained and characterized by EPR spectroscopy.     

Design and optimisation of AlxGa1−xAs/AlyGa1−yAs multilayer structures for visible wavelength applications

Quantum wells with excitonic features in the visible wavelength range were designed using the Al_xGa_1−xAs/Al_yGa_1−yAs material system, and grown using low pressure metal organic vapour phase epitaxy. Characterisation of these quantum well samples was carried out by using photovoltaic spectroscopy, photoluminescence, differential reflectance or photoreflectance techniques. These measurements showed that excitonic absorption in the 520–630 nm range could be achieved using these AlGaAs quantum wells.     

Vapor growth of GaxAl1−xSb

The vapor growth of Ga_xAl_1?xSb was experimentally studied using a closed tube transport technique. In the closed tube process with iodine as a transport agent, Ga_xAl_1?xSb was successfully grown on (111) oriented GaSb substrates at a relatively low temperature. The composition of the grown layer depended primarily on that of the source, and had only a small graded region (<0.5 μm) between the substrate and the epitaxial layer. The growth rate was almost constant irrespective of the growth time, whenever the other growth parameters were unchanged.     

Characterization of the optical properties of LPE InxGa1−xAsyP1−y thin layers grown on InP

A series of In_xGa_1?xAs_yP_1?y single-crystal thin layers have been grown on an InP substrate in a vertical liquid phase epitaxy furnace with a rotating slide boat system. The optical properties of these LPE quaternary alloys lattice-matched to InP have been investigated mainly by photoluminescence and electroreflectance measurements. Photoluminescence spectra of In_xGa_1?xAs_y P_1?y epitaxial layers are dominated by a strong luminescence line due to band-edge emission. At low temperatures, around 4.2 K, we have observed complicated luminescence bands with many fine structures. Electroreflectance spectra for the LPE In_xGa_1?xAs_yP_1?y layers are sufficiently broad to fulfil the low-field condition, and the analysis enabled us to determine precisely the band gap energy.     

Electric conductivity of glasses in the system Na2O/CaO/SiO2/Fe2O3

The addition of polyvalent transition metal ions to the usually insulating traditional soda-lime-silica glasses can lead to semiconducting properties. We report on synthesis of glasses and glass-ceramics in a soda-lime-silicate based system containing Fe₂O₃ in the concentration range from 5 to 30 mol%. Two sub-systems were considered, in one of them the ratio [Na₂O]/[Fe₂O₃] was varied while in the other one, the ratio [SiO₂]/[Fe₂O₃] was changed. The phase composition of the synthesized products was characterized by X-ray diffraction and energy dispersive X-ray analysis, while the electrical properties were studied by impedance spectroscopy. Partially crystallized non-reduced samples are semiconducting even at room temperature while the glassy samples (both reduced and non-reduced) exhibit semiconducting properties at temperatures equal or larger than 100 °C. An attempt is done to predict the physical approximation explaining the conduction process in the glasses.     

Crystal and Molecular Structures of C6H5CH2SOCH2CONHCH2C6H5 and C6H5SOCH2CON(iC3H7)2

Abstract  The crystal structures for two of the ligands C₆H₅CH₂SOCH₂CONHCH₂C₆H₅ (1) and C₆H₅SOCH₂CON(ⁱC₃H₇)₂ (2) have been determined by X-ray diffraction. These compounds crystallize in orthorhombic system with space groups and cell parameters, Pca21(no. 29), a = 8.4600(5) ?, b = 5.3534(5) ?, c = 32.136(2) ?, V = 1455.42(15) ?³ and Pna21(no. 33) a = 17.5563(11) ?, b = 5.7902(4) ?, c = 14.2866(9) ?, V = 1452.30(16) ?³, respectively. These molecules are stabilized in solid state by various intra and intermolecular hydrogen bonding interactions to give polymeric structures. The reported IR spectra of these compounds in solid state could be explained on the basis of the observed intermolecular hydrogen bonding interactions. Index Abstract  The title compounds C₆H₅CH₂SOCH₂CONHCH₂C₆H₅ (1) and C₆H₅SOCH₂CON(ⁱC₃H₇)₂ (2) were prepared by the oxidation of corresponding sulfides with H₂O₂/SeO₂ in methanol and their structures were determined. The structures show that the SO and CO groups are having “anti” configuration in 1 and “syn” configuration in 2. Electronic supplementary material  The online version of this article (doi:) contains supplementary material, which is available to authorized users.     

The effect of composition on UV-vis-NIR spectra of iron doped glasses in the systems Na2O/MgO/SiO2 and Na2O/MgO/Al2O3/SiO2

Glasses with the compositions xNa₂O · 10MgO · (90 − x)SiO₂, 10Na₂O · xMgO · (90 − x)SiO₂, 5Na₂O · 15MgO · xAl₂O₃ · (80 − x)SiO₂, xNa₂O · 10MgO · 10Al₂O₃ · (80 − x)SiO₂, 10Na₂O · 10MgO · xAl₂O₃ · (80 − x)SiO₂, 10Na₂O · 5MgO · 10Al₂O₃ · (80 − x)SiO₂ were melted and studied using UV-vis-NIR spectroscopy in the wavenumber range from 5000 to 30 000 cm⁻¹. At [Al₂O₃] > [Na₂O], the UV-cut off is strongly shifted to smaller wavenumbers and the NIR peak at around 10 000 cm⁻¹ attributed to Fe²⁺ in sixfold coordination gets narrower. Furthermore, the intensity of the NIR peak at 5500 cm⁻¹ increases. This is explained by the incorporation of iron in the respective glass structures.