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1.
The vibrational structure of the electronic state of C3 in the region 26 000-30 775 cm−1 has been re-examined, using laser excitation spectra of jet-cooled molecules. Rotational constants and vibrational energies have been determined for over 60 previously-unreported vibronic levels; a number of other levels have been re-assigned. The vibrational structure is complicated by interactions between levels of the upper and lower Born-Oppenheimer components of the state, and by the effects of the double minimum potential in the Q3 coordinate, recognized by Izuha and Yamanouchi [16]. The present work shows that there is also strong anharmonic resonance between the overtones of the ν1 and ν3 vibrations. For instance, the levels 2 1+ 1 and 0 1 + 3 are nearly degenerate in zero order, but as a result of the resonance they give rise to two levels 139 cm−1 apart, centered about the expected position of the 2 1+ 1 level. With these irregularities recognized, every observed vibrational level up to 30 000 cm−1 (a vibrational energy of over 5000 cm−1) can now be assigned. A vibronic level at 30181.4 cm−1, which has a much lower B′ rotational constant than nearby levels of the state, possibly represents the onset of vibronic perturbations by the electronic state; this state is so far unknown, but is predicted by the ab initio calculations of Ahmed et al. [36].  相似文献   

2.
Various iron-silicides are grown on clean Si(0 0 1) surfaces by solid phase epitaxy, a process which involves the deposition of iron and subsequent annealing [6]. Among them, we studied the structure of three-dimensional (3D) elongated islands, which are the major silicide type produced at lower Fe coverage (∼1 monolayer) and ?500-600 °C annealing. We applied a newly developed method of azimuth-scan reflection high-energy electron diffraction (RHEED) to obtain 3D reciprocal-lattice mapping. We succeeded in discriminating an α-FeSi2 phase from controversial bulk phases of the islands, and we were also able to determine the orientation relation as and , where the lattice mismatches are −1% in direction and +34% in direction. The attenuation of the incident electron beam along the length direction of the islands leads to extremely weak spots in the RHEED pattern. We emphasize that such an analysis of the reciprocal-lattice mapping is also useful in studying other 3D island structures. Using scanning tunneling microscopy, we showed that the island’s elongated directions are perpendicular to the dimer rows of the substrate located under the islands. The islands are located near the SB step edges. The elongation lengths of the islands are almost the same as the widths of the Si substrate terraces. We discussed the formation mechanism of the 3D-elongated islands. From an atomic image of the facet and edge of a 3D-elongated island, we proposed an atomic-structure model of the island facet and edge: a Si adatom on the hollow site of four Si atoms of an unit, with ordering in the direction of the elongation, forming an facet locally.  相似文献   

3.
M. Gurnett 《Surface science》2009,603(4):727-735
In this article we report our findings on the electronic structure of the Li induced Ge(1 1 1)-3 × 1 reconstruction as determined by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and core-level spectroscopy using synchrotron radiation. The results are compared to the theoretical honeycomb-chain-channel (HCC) model for the 3 × 1 reconstruction as calculated using density functional theory (DFT). ARUPS measurements were performed in both the and directions of the 1 × 1 surface Brillouin zone at photon energies of 17 and 21.2 eV. Three surface related states were observed in the direction. In the direction, at least two surface states were seen. The calculated band structure using the single-domain HCC model for Li/Ge(1 1 1)-3 × 1 was in good agreement with experiment, allowing for the determination of the origin of the experimentally observed surface states. In the Ge 3d core-level spectra, two surface related components were identified, both at lower binding energy with respect to the Ge 3d bulk peak. Our DFT calculations of the surface core-level shifts were found to be in fair agreement with the experimental results. Finally, in contrast to the Li/Si(1 1 1)-3 × 1 case, no double bond between Ge atoms in the top layer was found.  相似文献   

4.
The absorption spectra of jet-cooled AsH2 radicals were recorded in the wavelength range of 435-510 nm by cavity ringdown spectroscopy. The AsH2 radicals were produced by pulsed DC discharge in a molecular beam of a mixture of AsH3, SF6, and argon. Seven vibronic bands with fine rotational structures have been identified and assigned as the , , and (n = 1-3) bands of the electronic transition. Based on the previous studies of AsH2 radical, rotational assignments and rotational term values for each band were obtained, and the molecular parameters including vibrational constants, rotational constants, centrifugal distortion constants, and spin-rotation interaction constants were also determined.  相似文献   

5.
A tunable diode laser spectrometer has been employed to examine the unknown overtone absorption lines of NH3 around (760 nm). The spectrometer sources are commercially available heterostructure AlGaAs tunable diode lasers operating in the “free-running” mode. The detection of the lines has been possible by the use of the wavelength modulation spectroscopy and the second harmonic detection technique. A special algorithm has been used in order to fit the highly modulated absorption lines. The weakest observed resonances have absorption cross sections on the order of ?/molecule or ?/amagat. For some of the more intense lines self-, air-, N2-, He- and H2-broadening coefficients have been obtained at room temperature and also some shifting coefficients have been measured.  相似文献   

6.
We have studied desorption kinetics of deuterium molecules from a Si(1 0 0) surface by means of temperature-programmed desorption (TPD) spectra and isothermal desorptions.Three desorption components, denoted as β1,A,β1,B, and C, can be distinguished in semi-logarithmic plots of the TPD spectra.Their peak positions and intensities are strongly affected by the surface preparation methods employed, either with or without annealing to control the initial D coverage .Peak C appears at the leading edge of the TPD peak.It accounts for only about 5% of the TPD peak at and it diminishes rapidly with decreasing , vanishing at .In contrast, together the β1,A and β1,B peaks account for the whole TPD peak at any less than 1.0 ML. The maximum of the β1,A peak is nearly constant at around the maximum temperature of the TPD peak.On the other hand, the β1,B peak appears on the high-temperature side of the TPD peak and it systematically shifts to higher temperatures with decreasing .These results imply that first- and second-order kinetics are operating for the β1,A and β1,B desorptions, respectively.Isothermal desorption experiments confirm the above predicted kinetics for a limited region, namely .From the results for the rate curve analysis, the desorption barriers are evaluated to be 1.6 ± 0.1 eV and 1.8 ± 0.1 eV for the β1,A and β1,B desorptions, respectively.These values are substantially lower than the widely accepted value of ∼2.5 eV. To reproduce the measured TPD spectra we take the Arrhenius-type rate equation containing the first- and second-order rate terms for the β1,A and β1,B desorptions.The TPD spectra measured for can be reasonably fit with the proposed rate equation when the values given above for Ed,A and Ed,B are used. For , however, the TPD curves are not fit with the same values; rather, the best-fit curves require values for Ed,A and Ed,B larger than those given above. Combining the present kinetics results with those obtained by STM along with the studies, the β1,A and β1,B peaks may be attributed to desorption along the 2H path, while peak C may be attributed to desorption along the 4H path. The atomistic desorption mechanism as well as the energy relationship between the desorption barrier and isosteric heat of adsorption are discussed.  相似文献   

7.
Scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) images, and selected-area electron diffraction (SAED) patterns showed that vertically well aligned GaN nanorods with c-axis-oriented crystalline wurzite structures were grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects and that they were consisted of , {0 0 0 1}, and { } facets. The formation mechanisms for the GaN nanorods grown on Si(1 1 1) substrates are described on the basis of the SEM, TEM, SAED pattern, and HRTEM results.  相似文献   

8.
We have investigated modifications of sapphire (0 0 0 1) surface with and without coating, induced by a single laser pulse with a 1054 nm wavelength, 2.2 s duration, 7.75 mm spot and energy of 20-110 J. A holographic optical element was used for smoothing the drive beam spatially, but it induced small hotspots which initiated damage on the uncoated and coated surfaces. The individual damage effects of hotspots became less pronounced at high fluences. Due to high temperature and elevated non-hydrostatic stresses upon laser irradiation, damage occurred as fracture, spallation, basal and rhombohedral twinning, melting, vitrification, the formation of nanocrystalline phases, and solid-solid phase transition. The extent of damage increased with laser fluences. The formation of regular linear patterns with three-fold symmetry ( directions) upon fracture was due to rhombohedral twinning. Nanocrystalline -Al2O3 formed possibly from vapor deposition on the coated surface and manifested linear, triangular and spiral growth patterns. Glass and minor amounts of -Al2O3 also formed from rapid quenching of the melt on this side. The - to -Al2O3 transition was observed on the uncoated surface in some partially spalled alumina, presumably caused by shearing. The nominal threshold for laser-induced damage is about 47 J cm−2 for these laser pulses, and it is about 94 J cm−2 at the hotspots.  相似文献   

9.
Laser-induced fluorescence excitation spectra of MeRg (Me = Zn, Cd; Rg = He, Ne, Ar, Kr, Xe) complexes were recorded using the D1 ← X1 free ← bound transition. The complexes were produced in their ground state in a free-jet expansion beam and excited with a dye-laser beam directly to the excited state. Analysis of free ← bound unstructured profiles provided a shape of the repulsive part of the D1-state potentials. Valence ab initio calculations of the ZnRg and CdRg ground- and excited-state potentials and electronic transition dipole moments for the studied transition were performed, taking scalar relativistic and spin-orbit effects into account. Results of the calculations show regularities and correlations in the repulsive branches and bound wells of the X1- and D1-state potentials as well as provide information on the bonding character in both electronic energy states. The trends were compared with available experimental results for ZnRg and CdRg as well as for MgRg and HgRg.  相似文献   

10.
Using the interaction parameters up to the third neighbors and activated form of O and CO diffusion and their reaction, the model has been proposed for Monte-Carlo simulations describing the catalytic O + CO → CO2 reaction and occurring phase transitions on Pd(1 1 1) surface. Upon adsorption of CO the pre-adsorbed oxygen transforms from p(2 × 2)O phase into and phases in the limit of room and moderate temperatures, respectively. We demonstrate that the kinetic effects determine both the occurrence of the p(2 × 1)O and disappearance of the phases at moderate and low temperatures, respectively. Using reaction rate as a fit parameter, we show that at room temperature the start of the reaction can be synchronized with the occurrence of phase.  相似文献   

11.
Properties of surface defect states of CdTexS1 − x quantum dots with an average diameter of 7 nm are investigated experimentally. The stoichiometric ratio is found to be for by use of the energy dispersive analysis of x-ray. The photoluminescence spectrum, the photoluminescence excitation spectrum, and the surface passivation are adopted to characterize the properties of surface defect states. The energy levels of surface defect states of CdTexS1 − x quantum dots are also determined.  相似文献   

12.
We have studied the electronic band structure of (0 0 1) AlN/GaN quantum wells by means of a sp3sd5 empirical tight-binding Hamiltonian with nearest-neighbor interactions, including spin-orbit coupling and the effects of strain together with the surface Green function matching method. We have analyzed quantum wells with a thickness in the range 2 ? n ? 50, n being the number of principal layers of GaN in the well region. Results are presented for the point and the direction of the 2D Brillouin zone. The orbital character and the spatial localization of the different states have been also studied.  相似文献   

13.
14.
The high-resolution infrared spectra of DCF3 were reinvestigated in the ν6 fundamental band region near 500 cm−1 and around 1000 cm−1 with the aim to assign and analyze the overtone level of the asymmetric CF3 bending vibration v6 = 2.The present paper reports on the first study of both its sublevels (A1 and E corresponding to l = 0 and ±2, respectively) through the high-resolution analysis of the overtone band and the hot and bands.The well-known “loop method”, applied to and , yielded ground state energy differences Δ(KJ) = E0(KJ) − E0(K − 3,J) for the range of K = 6 to 30.In the final fitting of molecular parameters, we used the strategy of fitting all upper state data together with the ground state rotational transitions.This is equivalent to that calculating separately the and coefficients of the K-dependent part of the ground state energy terms from the combination loops.All rotational constants of the ground state up to sextic order could be refined in the calculation.This led to a very accurate determination of C0 = 0.18924413(25) cm−1, , and also .In the course of analyzing simultaneously the overtone band together with the and ν6 bands, the original assignment of the fundamental ν6 band [Bürger et al., J. Mol. Spectrosc. 182 (1997) 34-49] was found to be incompatible with the present one. Assignments of the (k + 1, l6 = +1)/(k − 1,l6 = −1) levels had to be interchanged, which changed the value of 6 = −0.14198768(26) cm−1 and the sign of the combination of constants C − B −  in the v6 = 1 level to a negative value.  相似文献   

15.
16.
Hangyao Wang 《Surface science》2009,603(16):L91-3016
Metal oxides are of interest as environmental oxidation catalysts, but practical applications are often limited by poorly understood surface poisoning processes. RuO2 is active for CO oxidation under UHV conditions but is deactivated by some surface poisoning processes at ambient pressures. In this work, we report kinetic models of surface poisoning during CO oxidation over RuO2(1 1 0), based on data obtained from plane-wave, supercell DFT calculations. While a surface carbonate is stable at low O2 pressures and high CO2 exposures, it is not stable under catalytic conditions. A surface bicarbonate is more stable and deactivates the RuO2 surface over a wide range of CO and oxygen pressures in the presence of trace amounts of water.  相似文献   

17.
We report on scanning tunneling microscopy results of thin dysprosium-silicide layers formed on Si(1 1 1). In the submonolayer regime, both a and a 5 × 2 superstructure were found. Based on images taken at different tunneling conditions, a structure model could be developed for the superstructure. For one monolayer, a 1 × 1 superstructure based on hexagonal DySi2 was observed, while several monolayers thick films are characterized by a superstructure from Dy3Si5.  相似文献   

18.
The oxidation of aniline at Cu(1 1 0) surfaces at 290 K has been studied by XPS and STM. A single chemisorbed product, assigned to a phenyl imide (C6H5N(a)), is formed together with water which desorbs. Reaction with preadsorbed oxygen results in a maximum surface concentration of phenyl imide of 2.8 × 1014 mol cm−2 and a surface dominated by domains of three structures described by , and unit meshes. However, concentrations of phenyl imide of up to 3.3 × 1014 mol cm−2 were obtained from the coadsorption of aniline and dioxygen (300:1 mixture) resulting in a highly ordered biphasic structure with and domains. Comparison of the STM and XPS data shows that only half the phenyl imides at the surface are imaged. Pi-stacking of the phenyl rings is proposed to account for this observation.  相似文献   

19.
We have studied the influence of CO on the adsorption of benzene on the Co(0 0 0 1) surface using LEED, XPS, TDS and work function measurements. CO was found to reduce the benzene adsorption, but even at saturation CO exposure no complete blocking was observed. Thermal desorption of the coadsorbed layer featured CO and H2 peaks indicating partial dehydrogenation of benzene and retaining of the CO bond. Ordered LEED structures were found with all coverages: Pre-adsorption of CO led to patterns already seen for pure carbon monoxide adsorption. Pre-adsorption of benzene showed the known structure of pure benzene also with small CO exposures, but higher CO exposures yielded a mixture of and patterns.  相似文献   

20.
The recent observation at the Tevatron of (uub and ddb) baryons within 2 MeV of the predicted Σb-Λb splitting and of baryons at the Tevatron within a few mega electron volts (MeV) of predictions has provided strong confirmation for a theoretical approach based on modeling the color hyperfine interaction. The prediction of  = 5790-5800 MeV is reviewed and similar methods used to predict the masses of the excited states and . The main source of uncertainty is the method used to estimate the mass difference mb-mc from known hadrons. We verify that corrections due to the details of the interquark potential and to Ξb- mixing are small. For S-wave qqb states we predict , and . For states with one unit of orbital angular momentum between the b quark and the two light quarks we predict , and . Results are compared with those of other recent approaches.  相似文献   

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