Binding energy shift in photoemission spectroscopy study of Ni clusters deposited on rutile TiO2 surfaces

Cluster-size-dependent binding energy (BE) shifts of Ni 2p_3/2 spectra in Ni clusters with respect to bulk Ni metal have been studied as a function of Ni coverage on clean rutile TiO₂(0 0 1) surfaces at room temperature. Auger parameter (AP) analysis of photoelectron spectra has been employed and revealed an obvious initial state contribution at the coverage of 0.5 monolayers (ML). The initial state effect was demonstrated to be strongly affected by the substrate and was assigned to a combination of eigenvalue shift in surface core-level shift (SCLS) and charge transfer between the metal clusters and substrates. The TiO₂(0 0 1) surface stoichiometry was found to introduce different charge transfer behaviors. Our results experimentally present that the Ni clusters are charged positively on stoichiomtric TiO₂ surface and less positively or even negatively on various reduced surfaces.     

Structure, band offsets and photochemistry at epitaxial α-Cr2O3/α-Fe2O3 heterojunctions

We test the hypothesis that electron-hole pair separation following light absorption enhances photochemistry at oxide/oxide heterojunctions which exhibit a type II or staggered band alignment. We have used hole-mediated photodecomposition of trimethyl acetic acid chemisorbed on surfaces of heterojunctions made from epitaxial α-Cr₂O₃ on α-Fe₂O₃(0001) to monitor the effect of UV light of wavelength 385 nm (3.2 eV) in promoting photodissociation. Absorption of photons of energies between the bandgaps of α-Cr₂O₃ (E_g = 4.8 eV) and α-Fe₂O₃ (E_g = 2.1 eV) is expected to be strong only in the α-Fe₂O₃ layer. The staggered band alignment should then promote the segregation of holes (electrons) to the α-Cr₂O₃ (α-Fe₂O₃) layer. Surprisingly, we find that the α-Cr₂O₃ surface alone promotes photodissociation of the molecule at hν = 3.2 eV, and that any effect of the staggered band alignment, if present, is masked. We propose that the inherent photoactivity of the α-Cr₂O₃(0001) surface results from the creation of bound excitons in the surface which destabilize the chemisorption bond in the molecule, resulting in photodecomposition.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Origin of XPS binding energy shifts in Ni clusters and atoms on rutile TiO2 surfaces

Cluster-size-dependent binding energy (BE) shifts of Ni 2p_3/2 spectra in Ni clusters with respect to bulk Ni metal have been studied as a function of Ni coverage on clean rutile TiO₂(0 0 1) and TiO₂(1 1 0) surfaces at room temperature. As a common method to distinguish initial and final state contributions to the core-level binding energy shifts in clusters, Auger parameter (AP) analysis of photoelectron spectra has been employed and reveals an obvious initial state contribution at the coverage of 0.5 monolayers (ML). From a comparison of results for TiO₂(0 0 1) and (1 1 0) surfaces, the initial state effect is demonstrated to be strongly affected by the substrate and is assigned to a combination of eigenvalue shift in surface core-level shift (SCLS) and charge transfer between the metal clusters and substrates. The Ni 2p_3/2 BE’s of atomic Ni on TiO₂(0 0 1) and (1 1 0) surfaces are deduced to be 853.69 and 853.55 eV, respectively, from an extrapolation of the experimental BE curves to zero Ni coverage. Compared with atomic Ni in gas phase, relaxation shifts of 7.34 and 7.48 eV are obtained on TiO₂(0 0 1) and (1 1 0) surfaces, respectively. These values are very close to the relaxation shift of 7.3 eV due to d electron screening, indicating d-like screening effects from the TiO₂ substrates after Ni 2p photoionization.     

Cluster size dependence of SiO2 thin film formation by O2 gas cluster ion beams

Cluster size effects of SiO₂ thin film formation with size-selected O₂ gas cluster ion beams (GCIBs) irradiation on Si surface were studied. The cluster size varied between 500 and 20,000 molecules/cluster. With acceleration voltage of 5 kV, the SiO₂ thickness was close to the native oxide thickness by irradiation of (O₂)_20,000 (0.25 eV/molecule), or (O₂)_10,000 (0.5 eV/molecule). However, it increased suddenly above 1 eV/molecule (5000 molecules/cluster), and increased monotonically up to 10 eV/molecule (500 molecules/cluster). The SiO₂ thickness with 1 and 10 eV/molecule O₂-GCIB were 2.1 and 5.0 nm, respectively. When the acceleration voltage was 30 kV, the SiO₂ thickness has a peak around 10 eV/molecule (3000 molecules/cluster), and it decreased gradually with increasing the energy/molecule. At high energy/molecule, physical sputtering effect became more dominant process than oxide formation. These results suggest that SiO₂ thin film formation can be controlled by energy per molecule.     

Characterization of Pd-CeOx interaction on α-Al2O3 support

The Pd-Ce interaction was studied over CeO₂ (0.3-2.5 wt.%)-Pd (1 wt.%)/α-Al₂O₃ catalysts used in the reforming reaction of CH₄ with CO₂. The samples were characterized by using high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS). The activity and selectivity behavior was in good agreement with that of other supported metal catalysts (Ni and Pd) modified with different promoters. The preliminary results of HRTEM would indicate that the CeO_x forms small crystallites around the Pd particle. The XPS analysis for the regions of Ce 3d and Pd 3d, gives an account of Ce being present mostly as Ce³⁺ and a high binding energy for Pd 3d_5/2 (335.3 eV), an evidence of Pd-Ce chemical interaction. The Pd/Al XPS intensity ratios vs. the Pd average particle size, determined by TEM, show an excellent correlation for fresh and used catalyst. These results indicate that the diminution of the Pd/Al ratios was due to Pd sintering. Consequently, the small amounts of CeO_x species do not cover the Pd particle, in agreement with the HRTEM results. The overall results stand for the promoter action mechanism of the CeO_x for the reforming reaction with CO₂.     

Specific mass shift of potassium 5P1/2 state

We have measured the isotope shift between ⁴¹K and ³⁹K in the 4s_1/2 → 5p_1/2 transition at 405 nm using saturation spectroscopy. Our measured isotope shift is 456.1 ± 0.8 MHz, implying a residual isotope shift (sum of specific mass shift and field shift) of −52.7 ± 0.8 MHz. We deduce a specific mass shift of −40 ± 5 MHz, which would imply that the 5p_1/2 state has a considerably larger specific mass shift than the 4p_1/2 state. We have in addition measured the 5p_1/2 hyperfine splitting for ⁴¹K.     

Mg substitutions in ZnO-Al2O3 thin films and its effect on the optical absorption spectra of the nanocomposite

ZnO-Al₂O₃ nanocomposite thin films were prepared by sol-gel technique. The room temperature synthesis was mainly based on the successful peptization of boehmite (AlO(OH)) and Al(OH)₃ compounds, so as to use it as matrix to confine ZnO nanoparticles. The relative molar concentrations of xZnO to (1 − x) Al₂O₃ were varied as x = 0.1, 0.2 and 0.5. The optical absorption spectra of the thin films showed intense UV absorption peaks with long tails of variable absorption in the visible region of the spectra. The ZnO-Al₂O₃ nanocomposites thin films were doped with MgO by varying its molar concentrations as y = 0.05, 0.75, 0.1, 0.125, 0.15 and 0.2 with respect to the ZnO present in the composite. The MgO doped thin films showed suppression of the intense absorption peaks that was previously attained for undoped samples. The disappearance of the absorption peaks was analyzed in terms of the crystalline features and lattice defects in the nanocomposite system. The bulk absorption edge, which is reportedly found at 3.37 eV, was shifted to 5.44 eV (for y = 0.05), 5.63 eV (for y = 0.075) and maximum to 5.77 eV (for y = 0.1). In contrast, beyond the concentration, y = 0.1 the absorption edges were moved to 5.67 eV (for y = 0.125), 5.61 eV (for y = 0.15) and to 5.49 eV (for y = 0.2). This trend was explained in terms of the Burstein-Moss shift of the absorption edges.     

Interface properties of an O2 annealed Au/Ni/n-Al0.18Ga0.82N Schottky contact

We oxidized a Ni/Au metal bi-layer contact fabricated on HVPE Al_0.18Ga_0.82N from 373 K to 573 K in 100 K steps. In the range 1 kHz to 2 MHz, the Capacitance–Voltage–Frequency (C–V–f) measurements reveal a frequency dispersion of the capacitance and the presence of an anomalous peak at 0.4 V owing to the presence of interface states in the as deposited contact system. The dispersion was progressively removed by O₂ anneals from temperatures as low as 373 K. These changes are accompanied by an improvement in the overall quality of the Schottky system: the ideality factor, n, improves from 2.09 to 1.26; the Schottky barrier height (SBH), determined by the Norde [1] method, increases from 0.72 eV to 1.54 eV. From the Nicollian and Goetzberger model [2], we calculated the energy distribution of the density of interface states, N_SS. Around 1 eV above the Al_0.18Ga_0.82N valence band, N_SS, decreases from 2.3×10¹² eV⁻¹ cm⁻² for the un-annealed diodes to 1.3×10¹² eV⁻¹ cm⁻² after the 573 K anneal. Our results suggest the formation of an insulating NiO leading to a MIS structure for the oxidized Au/Ni/Al_0.18Ga_0.82N contact.     

Optical properties of ITO/TiO2 single and double layer thin films deposited by RPLAD

Indium tin oxide (ITO) and titanium dioxide (TiO₂) single layer and double layer ITO/TiO₂ films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO₂ substrates either at room temperatures (RT) or heated to 200-400 °C. Under optimized conditions, transmission of ITO films in the visible (vis) range was above 89% for films produced at RT and 93% for the ones deposited at higher temperatures. Increasing the substrate temperature from RT to 400 °C enhances the transmission of TiO₂ films in the vis-NIR from about 70% to 92%. High transmission (≈90%) was observed for the double layer ITO/TiO₂ with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (E_g), as well as the refractive indexes (n) for the films were estimated. n ≈ 2.03 and 2.04, respectively for ITO films and TiO₂ film deposited at 400 °C in the visible region. Post-annealing of the TiO₂ films for 3 h at 300 and 500 °C was performed to enhance n. The refractive index of the TiO₂ films increases with the post-annealing temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200, and 400 °C, respectively. The TiO₂ films present a direct band gap of 3.51 and 3.37 eV for as deposited TiO₂ films and when annealed at 400 °C, respectively. There is a shift of about 0.1 eV between ITO and ITO/TiO₂ films deposited at 200 °C. The shift decreases by half when the TiO₂ film was deposited at 400 °C. Post-annealing was also performed on double layer ITO/TiO₂.     

Optical properties of surface-modified Bi2O3 nanoparticles

Stearic acid coated Bi₂O₃ nanoparticles in the size range of 5-13 nm were synthesized by the microemulsion method. HRTEM showed that the morphology of Bi₂O₃ nanoparticles was ellipsoidal. The absorption edge of Bi₂O₃ nanoparticles showed a blue shift of ∼0.45 eV, comparing with that of the bulk Bi₂O₃. At room temperature, Bi₂O₃ nanoparticles also showed a strong luminescence at 397 and 420 nm, depending on the excitation wavelength.     

Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals

The absorption edge of undoped Tl₂Ga₂S₃Se crystals have been studied through transmission and reflection measurements in the wavelength range 440–1100 nm and in the temperature range 10–300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature γ=−2.6×10⁻⁴ eV/K and the absolute zero value of the band gap energy E_gi(0)=2.42 eV were obtained.     

A Ni/YSZ composite containing Ce0.9Ca0.1O2−δ particles as an anode for SOFCs

A composite material (hereafter referred to as NYC) containing Ni, Y₂O₃-stabilized ZrO₂ (YSZ) and Ce_0.9Ca_0.1O_2−δ (CC10) particles was prepared and used as the anode of solid oxide fuel cells (SOFCs). The performance of NYC was better than that of conventional Ni/YSZ anodes in terms of anodic overpotential and interface impedance. The additional CC10 particles improved the anode properties. XRD results suggest that a solid solution of YSZ and CC10 was produced. From impedance measurements, it is concluded that the solid solution exhibits substantial electronic conduction. Ni/YSZ/15 wt% Ce_0.9Ca_0.1O_2−δ anodes exhibited the best properties over the experimental temperature range. A SOFC with an anode of Ni/YSZ/15 wt% Ce_0.9Ca_0.1O_2−δ provided the maximum power density and current density. Addition of CC10 with an average particle size of 0.3 μm was more advantageous than that with an average size of 3 μm.     

Preparation and characterization of novel Pd/SiO2 and Ca-Pd/SiO2 egg-shell catalysts with porous hollow silica

Novel egg-shell structured monometallic Pd/SiO₂ and bimetallic Ca-Pd/SiO₂ catalysts were prepared by an impregnation method using porous hollow silica (PHS) as the support and PdCl₂ and Ca(NO₃)₂·4H₂O as the precursors. It was found from transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) that Pd was loaded on PHS with a particle size of 5-12 nm in Pd/SiO₂ samples and the Pd particle size in Ca-Pd/SiO₂ was smaller than that in Pd/SiO₂ since Ca could prevent Pd particles from aggregating. X-ray photoelectron spectroscopy (XPS) analyses exhibited that Pd 3d_5/2 binding energies of Pd/SiO₂ and Ca-Pd/SiO₂ were 0.2 and 0.9 eV lower than that of bulk Pd, respectively, as a result of the shift of the electron cloud from Pd to oxygen in Pd/SiO₂ and to both oxygen and Ca in Ca-Pd/SiO₂. The activity of Ca-Pd/SiO₂ egg-shell catalyst for CO hydrogenation and the selectivity to methanol, with a value of 36.50 mmol_CO mol⁻¹_Pd s⁻¹ and 100%, respectively, were much higher than those of the catalysts prepared with traditional silica gel as the support, owing to the porous core-shell structure of the PHS support.     

Molecular material—{N(n-C4H9)4[Ni(II)0.5 Fe(II)0.5 Fe(III)(C2O4)3]}∞: Magnetic, Mössbauer and electrical conductivity studies

We have attempted to characterize the magnetic and electrical properties of a new mixed-metal molecular material {NBu₄[Ni(II)_0.5Fe(II)_0.5Fe(III)(ox)₃]}_N synthesized by the use of trioxalatoferrate as the building block. Mössbauer spectroscopy was utilized in order to understand local spin structures in this compound. The results indicate that the compound is a semiconducting ferrimagnet with T_N=30 K and room temperature conductivity of 6×10⁻¹⁵ Ω⁻¹ cm⁻¹ along with 1.8 eV activation energy under dark. The compound has no appreciable electrical response towards illumination.     

Intrinsic polyatomic defects in Sc2(WO4)3

The intrinsic formation of polyatomic defects in Sc₂(WO₄)₃-type structures is studied by Mott Littleton calculations and Molecular Dynamics simulations. Defects involving the WO₄²⁻ tetrahedron are found to be energetically favorable when compared to isolated W and O defects. WO₄²⁻ Frenkel and (2Sc³⁺, 3WO₄²⁻) Schottky defects exhibit formation energies of 1.23 eV and 1.97 eV, respectively and therefore may occur as intrinsic defects in Sc₂(WO₄)₃ at elevated temperatures. WO₄²⁻ vacancy and interstitial migration processes have been simulated by classical Molecular Dynamics simulations. The interstitial defect exhibits a nearly 10 times higher mobility (with a migration energy of 0.68 eV), than the vacancy mechanism (with a slightly higher migration energy of 0.74 eV) and thus should dominate the overall ionic conduction. Still both models reproduce the experimental activation energy (0.67 eV) nearly within experimental uncertainty.     

Spectroscopic study of ZnO doped CeO2-PbO-B2O3 glasses

Glass samples of compositions xZnO-xCeO₂-(30−x)PbO-(70−x)B₂O₃ with x varying from 2% to 10% mole fraction are prepared by the melt quench technique. The structural and optical analysis of glasses is carried out by XRD, FTIR, density and UV-visible spectroscopic measurement techniques. The FTIR spectral analysis indicates that with the addition of ZnO contents in glass network, structural units of BO₃ are transformed into BO₄. It has been observed in our previous work that band gap decreases from 2.89 to 2.30 eV for CeO₂-PbO-B₂O₃ glasses with cerium content varying from 0% to 10% [Gurinder Pal Singh, Davinder Paul Singh, Physica B 406(3) (2011) 640-644]. With the incorporation of zinc in CeO₂-PbO-B₂O₃ glasses, the optical band gap energy decreases further from 2.38 to 2.03 eV. This causes more compaction of the borate network, which results in an increase of density (3.39-4.02 g/cm³). Transmittance shows that ZnO in glass samples acts as a reducing agent thathelps to convert Ce⁴⁺→Ce³⁺ ions.     

Optical investigation of charge-transfer transitions in spinel Co3O4

Optical transitions in normal-spinel Co₃O₄ have been identified by investigating the variation of its optical absorption spectrum with the replacement of Co by Zn. Three optical-transition structures were located at about 1.65, 2.4, and 2.8 eV from the measured dielectric function of Co₃O₄ by spectroscopic ellipsometry. The variation of the absorption structures with the Zn substitution (Zn_xCo_3−xO₄) can be explained in terms of charge-transfer transitions involving d states of Co ions. The 1.65 eV structure is assigned to a d-d charge-transfer transition between the t_2g states of octahedral Co³⁺ ion and t₂ states of tetrahedral Co²⁺ ion, t_2g(Co³⁺)→t₂(Co²⁺). The 2.4 and 2.8 eV structures are interpreted as due to charge-transfer transitions involving the p states of O²⁻ ion: p(O²⁻)→t₂(Co²⁺) for the 2.4 eV absorption and p(O²⁻)→e_g(Co³⁺) for the 2.8 eV absorption. The observed gradual reduction of the 1.65 and 2.4 eV absorption strength with the increase of the Zn composition for Zn_xCo_3−xO₄ can be explained in terms of the substitution of the tetrahedral Co²⁺ sites by Zn²⁺ ions. The crystal-field splitting Δ_Oh between the e_g and the t_2g states of the octahedral Co³⁺ ion is estimated to be 2 eV.     

Electrical and optical properties of thermally-evaporated thin films from A2[TiO(C2O4)2] (A = K, PPh4) and 1,8-dihydroxyanthraquinone

In this work, the synthesis of molecular materials formed from A₂[TiO(C₂O₄)₂] (A = K, PPh4) and 1,8 dihydroxyanthraquinone is reported. The synthesized materials were characterized by atomic force microscopy (AFM), infrared (IR) and ultraviolet-visible (UV-vis) spectroscopy. IR spectroscopy showed that the molecular-material thin-films, deposited by vacuum thermal evaporation, exhibit the same intra-molecular vibration modes as the starting powders, which suggests that the thermal evaporation process does not alter the initial chemical structures. Electrical transport properties were studied by dc conductivity measurements. The electrical activation energies of the complexes, which were in the range of 0.003-1.16 eV, were calculated from Arrhenius plots. Optical absorption studies in the wavelength range of 190-1090 nm at room temperature showed that the optical band gaps of the thin films were around 1.9-2.3 eV for direct transitions Eg_d. The cubic NLO effects were substantially enhanced for materials synthesized from K₂[TiO(C₂O₄)₂], where χ⁽³⁾ (−3ω; ω, ω, ω) values in the promising range of 10⁻¹² esu have been evaluated.