Deep levels in low‐energy electron‐irradiated 4H‐SiC

Deep levels introduced by low‐energy (200 keV) electron irradiation in n‐type 4H‐SiC epitaxial layers grown by chemical vapour deposition were studied by deep level transient spectroscopy (DLTS) and photoexcitation electron paramagnetic resonance (photo‐EPR). After irradiation, several DLTS levels, EH1, EH3, Z_1/2, EH5 and EH6/7, often reported in irradiated 4H‐SiC, were observed. In irradiated freestanding films from the same wafer, the EPR signals of the carbon vacancy in the positive and negative charge states, V_C⁺ and V_C^‐, respectively, can be observed simultaneously under illumination with light of certain photon energies. Comparing the ionization energies obtained from DLTS and photo‐EPR, we suggest that the EH6/7 (at ～E_C – 1.6 eV) and EH5 (at ～E_C – 1.0 eV) electron traps may be related to the single donor (+ | 0) and the double acceptor (1– | 2–) level of V_C, respectively. Judging from the relative intensity of the DLTS signals, the EH6/7 level may also be contributed to by other unidentified defects. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐performance In–Zn–O thin‐film transistors with a soluble processed ZrO2 gate insulator

Spin‐coated zirconium oxide films were used as a gate dielectric for low‐voltage, high performance indium zinc oxide (IZO) thin‐film transistors (TFTs). The ZrO₂ films annealed at 400 °C showed a low gate leakage current density of 2 × 10^–8 A/cm² at an electric field of 2 MV/cm. This was attributed to the low impurity content and high crystalline quality. Therefore, the IZO TFTs with a soluble ZrO₂ gate insulator exhibited a high field effect mobility of 23.4 cm²/V s, excellent subthreshold gate swing of 70 mV/decade and a reasonable I_on/off ratio of ～10⁶. These TFTs operated at low voltages (～3.0 V) and showed high drain current drive capability, enabling oxide TFTs with a soluble processed high‐k dielectric for use in backplane electronics for low‐power mobile display applications. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐order Stokes and anti‐Stokes Raman generation in monoisotopic CVD 12C‐diamond

We determined, for the first time, the room temperature phonon energy related to the F_2g vibration mode (ω_SRS(12C) ～ 1333.2 cm^–1) in a mono‐crystalline single‐isotope CVD ¹²C‐diamond crystal by means of stimulated Raman scattering (SRS) spectroscopy. Picosecond one‐micron excitation using a Nd³⁺:Y₃Al₅O₁₂‐laser generates a nearly two‐octave spanning SRS frequency comb (～12000 cm^–1) consisting of higher‐order Stokes and anti‐Stokes components. The spacing of the spectral lines was found to differ by Δω_SRS ～ 0.9 cm^–1 from the comb spacing (ω_SRS(natC) ～ 1332.3 cm^–1) when pumping a conventional CVD diamond crystal with a natural composition of the two stable carbon isotopes ¹²C (98.93%) and ¹³C (1.07%). (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

High‐gain Zn1–xMgx O‐based ultraviolet photodetectors on Al2O3 and LiGaO2 substrates

We report the fabrication and characterization of highly responsive ZnMgO‐based ultraviolet (UV) photodetectors in the metal–semiconductor–metal (MSM) configuration for solar‐blind/visible‐blind optoelectronic application. MSM devices were fabricated from wurtzite Zn_1–xMg_x O/ZnO (x ～ 0.44) thin‐film heterostructures grown on sapphire (α‐Al₂O₃) substrates and w‐Zn_1–xMg_x O (x ～ 0.08), grown on nearly lattice‐matched lithium gallate (LiGaO₂) substrates, both by radio‐frequency plasma‐assisted molecular beam epitaxy (PAMBE). Thin film properties were studied by AFM, XRD, and optical transmission spectra, while MSM device performance was analyzed by spectral photoresponse and current–voltage techniques. Under biased conditions, α‐Al₂O₃ grown devices exhibit peak responsivity of ～7.6 A/W at 280 nm while LiGaO₂ grown samples demonstrate peak performance of ～119.3 A/W, albeit in the UV‐A regime (～324 nm). High photoconductive gains (76, 525) and spectral rejection ratios (～10³, ～10⁴) were obtained for devices grown on α‐Al₂O₃ and LiGaO₂, respectively. Exemplary device performance was ascribed to high material quality and in the case of lattice‐matched LiGaO₂ films, decreased photocarrier trapping probability, presumably due to low‐density of dislocation defects. To the best of our knowledge, these results represent the highest performing ZnO‐based photodetectors on LiGaO₂ yet fabricated, and demonstrate both the feasibility and substantial enhancement of photodetector device performance via growth on lattice‐matched substrates. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

FT‐Raman spectroscopic spectra on 3‐phenylpropylamine inclusion compounds

Some new Hofmann‐3‐phenylpropylamine‐type clathrates with chemical formulae of M(3‐phenylpropylamine)₂ Ni(CN)₄. 2G (MNi or Co, G = 1,2‐dichlorobenzene or 1,3‐dichlorobenzene) have been prepared and their Fourier transform infrared(FT‐IR; 4000–400 cm⁻¹), far‐infrared (600–100 cm⁻¹) and FT‐Raman (4000–60 cm⁻¹) spectra are reported. The ligand molecule, guest molecules, polymeric sheet and metal‐ligand bands of the clathrates are assigned in detail. The compounds are also characterized by thermal gravimetric analysis (TGA), differential thermal analysis (DTA), elemental analysis and magnetic susceptibility measurements. From the results, the monodentate 3‐phenylpropylamine ligand molecule bonds to the metal atom of |M‐Ni(CN)₄ | _∞ polymeric layers in the trans‐gauche‐gauche (TGG) form, and 1,2‐dichlorobenzene or 1,3‐dichlorobenzene molecules are guested by this structure revealing the inclusion ability of the host complexes. Copyright © 2010 John Wiley & Sons, Ltd.     

Field emission graphene–oxide–silicon field effect based photodetector

Silicon‐based devices keep moving into smaller dimension for improving the speed, efficiency, and low‐power consumption. Novel designed semiconductor device architectures are needed to overcome the physical limitations. An integration of well‐designed nanostructure and nanomaterials can potentially establish new principles and approaches to nanoelectronic and photonic devices. We herein demonstrate a graphene/SiO₂/p‐Si (GOS) heterostructure with an embedded nanoscale mesa, forming a GOS‐Mesa field‐effect photodetector. The proposed structure exhibits that multiple exciton generation (MEG) can occur in a quantum‐confined two‐dimensional electron gas (2DEG) region via impact ionization, leading to high internal quantum efficiency (η_IQE). The numerical simulation of the carrier multiplication (CM) factor in our designed structure finds a reasonable agreement with empirical data. Simulated and measured internal quantum efficiency demonstrate ～195% and ～135% of UV–Vis radiation, respectively. A vertically confined 2DEG plays an important role not only in enabling the electron emission process which is responsible for the flowing of electron current, but also in developing a highly localized electric field (up to ～10⁶ V/cm) at the SiO₂/Si interface, enabling an impact ionization process under photon energy of merely ～1.95 eV. Our findings demonstrate that carrier multiplication can be achieved in a suitably designed nanoscale structure in conjunction with nanomaterial on silicon‐based devices, providing incentive to better understand MEG within quantum wells in 2DEG systems, and being a research path to enhancing the efficiency of future solar harvesting technologies. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Electroluminescence enhancement in ultraviolet organic light‐emitting diode with graded hole‐injection and ‐transporting structure

Electroluminescent intensity and external quantum efficiency (EQE) in ultraviolet organic light‐emitting diodes (UV OLEDs) have been remarkably enhanced by using a graded hole‐injection and ‐transporting (HIT) structure of MoO₃/N,N ′‐bis(naphthalen‐1‐yl)‐N,N ′‐bis(phenyl)‐benzidine/MoO₃/4,4′‐bis(carbazol‐9‐yl)biphenyl (CBP). The graded‐HIT based UV OLED shows superior short‐wavelength emis‐ sion with spectral peak of ～410 nm, maximum electroluminescent intensity of 2.2 mW/cm² at 215 mA/cm² and an EQE of 0.72% at 5.5 mA/cm². Impedance spectroscopy is employed to clarify the enhanced hole‐injection and ‐transporting capacity of the graded‐HIT structure. Our results provide a simple and effective approach for constructing efficient UV OLEDs. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effects of Mn‐doping on surface acoustic wave properties of ZnO films

Surface acoustic wave (SAW) filters based on Mn‐doped ZnO films have been fabricated and effects of Mn‐doping on SAW properties are investigated. It is found that the electromechanical coupling coefficient (K²) of Zn_0.913Mn_0.087O films is 0.73 ± 0.02%, which is 73.8% larger than that of undoped ZnO films (0.42 ± 0.02%). Zn_0.913Mn_0.087O film filters also exhibit a lower absolute value of insertion loss (|IL|) of 16.1 dB and larger bandwidth (BW) of 5.9 MHz compared with that of undoped ZnO film filter. However, Zn_0.952Mn_0.048O film filters exhibit a smaller K² of 0.34 ± 0.02%, larger |IL| of 26.9 dB and smaller BW of 3.5 MHz. It is suggested that the SAW properties can be improved by appropriate Mn‐doping and Mn–ZnO/Si multilayer structure with large d₃₃ is promising for wide‐band and low‐loss SAW applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nanocarbon hybrids of graphene‐based materials and ultradispersed diamond: investigating structure and hierarchical defects evolution with electron‐beam irradiation

We report the influence of electron‐beam (E‐beam) irradiation on the structural and physical properties modification of monolayer graphene (Gr), reduced graphene oxide (rGO) and graphene oxide (GO) with ultradispersed diamond (UDD) forming novel hybrid composite ensembles. The films were subjected to a constant energy of 200 keV (40 nA over 100 nm region or electron flux of 3.9 × 10¹⁹ cm⁻²s⁻¹) from a transmission electron microscope gun for 0 (pristine) to 20 min with an interval of 2.5 min continuously – such conditions resemble increased temperature and/or pressure regime, enabling a degree of structural fluidity. To assess the modifications induced by E‐beam, the films were analyzed prior to and post‐irradiation. We focus on the characterization of hierarchical defects evolution using in situ transmission electron microscopy combined with selected area electron diffraction, Raman spectroscopy (RS) and Raman mapping techniques. The experiments showed that the E‐beam irradiation generates microscopic defects (most likely, interstitials and vacancies) in a hierarchical manner much below the amorphization threshold and hybrids stabilized with UDD becomes radiation resilient, elucidated through the intensity, bandwidth, and position variation in prominent RS signatures and mapping, revealing the defects density distribution. The graphene sheet edges start bending, shrinking, and generating gaps (holes) at ~10–12.5 min owing to E‐beam surface sputtering and primary knock‐on damage mechanisms that suffer catastrophic destruction at ~20 min. The microscopic point defects are stabilized by UDD for hybrids in the order of GO > rGO ≥ Gr besides geometric influence, i.e. the int erplay of curvature‐induced (planar vs curved) energy dispersion/absorption effects. Furthermore, an attempt was made to identify the nature of defects (charged vs residual) through inter‐defect distance (i.e. L_D). The trends of L_D for graphene‐based hybrids with E‐beam irradiation implies charged defects described in terms of dangling bonds in contrast to passivated residual or neutral defects. More importantly, they provided a contrasting comparison among variants of graphene and their hybrids with UDD. Copyright © 2015 John Wiley & Sons, Ltd.     

Thermoelectric properties of unoxidized graphene/Bi2Te2.7Se0.3 composites synthesized by exfoliation/re‐assembly method

Nanocomposites of n‐type thermoelectric Bi₂Te_2.7Se_0.3 (BTS) and unoxidized graphene (UG) were prepared from the exfoliated BTS and UG nanoplatelets. Polycrystalline BTS ingots were exfoliated into nanoscoll‐type crystals by chemical exfoliation, and were re‐assembled with UG nanoplatelets. The composites were chemically reduced by hydrazine hydrate and sintered by a spark‐plasma‐sintering method. The thermoelectric properties of the sintered composites were evaluated and exhibited decreased carrier concentration and increased thermal conductivity due to the embedded graphene. The peak ZT values for the UG/BTS‐US and UG/BTS‐EX composites were ～0.8 at the UG concentration of 0.05 wt%. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Triple‐resonant two‐phonon Raman scattering in graphene

The triple‐resonant (TR) second‐order Raman scattering mechanism in graphene is re‐examined. It is shown that the magnitude of the TR contribution to the photon‐G′ mode coupling function in graphene is one order of magnitude larger than the widely accepted two‐resonant coupling. Enhancement of the order of 100 in the Raman intensity, with respect to the usual double‐resonant model, is found for the G′ band in graphene, and is expected in the related sp²‐based carbon materials, as well. Copyright © 2011 John Wiley & Sons, Ltd.     

A dedicated small‐angle X‐ray scattering beamline with a superconducting wiggler source at the NSRRC

At the National Synchrotron Radiation Research Center (NSRRC), which operates a 1.5 GeV storage ring, a dedicated small‐angle X‐ray scattering (SAXS) beamline has been installed with an in‐achromat superconducting wiggler insertion device of peak magnetic field 3.1 T. The vertical beam divergence from the X‐ray source is reduced significantly by a collimating mirror. Subsequently the beam is selectively monochromated by a double Si(111) crystal monochromator with high energy resolution (ΔE/E? 2 × 10^?4) in the energy range 5–23 keV, or by a double Mo/B₄C multilayer monochromator for 10–30 times higher flux (～10¹¹ photons s^?1) in the 6–15 keV range. These two monochromators are incorporated into one rotating cradle for fast exchange. The monochromated beam is focused by a toroidal mirror with 1:1 focusing for a small beam divergence and a beam size of ～0.9 mm × 0.3 mm (horizontal × vertical) at the focus point located 26.5 m from the radiation source. A plane mirror installed after the toroidal mirror is selectively used to deflect the beam downwards for grazing‐incidence SAXS (GISAXS) from liquid surfaces. Two online beam‐position monitors separated by 8 m provide an efficient feedback control for an overall beam‐position stability in the 10 µm range. The beam features measured, including the flux density, energy resolution, size and divergence, are consistent with those calculated using the ray‐tracing program SHADOW. With the deflectable beam of relatively high energy resolution and high flux, the new beamline meets the requirements for a wide range of SAXS applications, including anomalous SAXS for multiphase nanoparticles (e.g. semiconductor core‐shell quantum dots) and GISAXS from liquid surfaces.     

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Substituent effect investigation of 3‐(2, 4‐dichlorophenyl)‐1‐(4′‐X‐phenyl)‐2‐propen‐1‐one. Part 1. Correlation analysis of 13C NMR chemical shifts

A series of substituted chlorinated chalcones namely, 3‐(2,4‐dichlorophenyl)‐1‐(4′‐X‐phenyl)‐2‐propen‐1‐one, have been synthesized, X being H, NH₂, OMe, Me, F, Cl, CO₂Et, CN, and NO₂. Dual substituent parameter (DSP) models of ¹³C NMR chemical shift (CS) have revealed that π‐polarization concept could be utilized to explain the reverse field effect at CO, the enhanced substituent field effect at CO, C‐2, and C‐5, and the decreased sensitivity of substituent field effect at C‐6. Chlorine atoms dipole direction at the benzylidene ring either enhances or reduces substituent effect depending on how they couple with the substituent dipole at the probe site. The correlation of ¹³C NMR CS of C‐2, C‐5, and C‐6 with σ and σ indicates that chlorine atoms in the benzylidine ring deplete the ring from charges. Both MSP of Hammett and DSP of Taft ¹³C NMR CS models give similar trends of substituent effects at C‐2, C‐5, and C‐6. However, the former fail to give a significant correlation for CO and C‐6 ¹³C NMR CS. MSP of σ_q and DSP of Taft and Reynolds models significantly correlated ¹³C NMR CS of C_β. MSP of σ_q fails to correlate C‐1′ ¹³C NMR CS. Investigation of ¹³C NMR CS of non‐chlorinated chalcones series: 3‐phenyl‐1‐(4′‐X‐phenyl)‐2‐propen‐1‐one has revealed similar trends of substituent effects as in the chlorinated chalcones series for C‐1′, CO, C_α, and C_β. In contrast, the substituent effect of the non‐chlorinated chalcone series at C‐2, C‐5, and C‐6 did not correlate with any substituent constant. Copyright © 2010 John Wiley & Sons, Ltd.     

Measurement of the third‐order nonlinear optical susceptibility χ(3) for the 1002‐cm–1 mode of benzenethiol using coherent anti‐Stokes Raman scattering with continuous‐wave diode lasers

The components of the third‐order nonlinear optical susceptibility χ⁽³⁾ for the 1002‐cm^–1 mode of neat benzenethiol have been measured using coherent anti‐Stokes Raman scattering with continuous‐wave diode pump and Stokes lasers at 785.0 and 852.0 nm, respectively. Values of 2.8 ± 0.3 × 10^–12, 2.0 ± 0.2 × 10^–12, and 0.8 ± 0.1 × 10^–12 cm·g^–1·s² were measured for the xxxx, xxyy, and xyyx components of |3χ⁽³⁾|, respectively. We have calculated these quantities using a microscopic model, reproducing the same qualitative trend. The Raman cross‐section σ_RS for the 1002‐cm^–1 mode of neat benzenethiol has been determined to be 3.1 ± 0.6 × 10^–29 cm² per molecule. The polarization of the anti‐Stokes Raman scattering was found to be parallel to that of the pump laser, which implies negligible depolarization. The Raman linewidth (full‐width at half‐maximum) Γ was determined to be 2.4 ± 0.3 cm^–1 using normal Stokes Raman scattering. The measured values of σ_RS and Γ yield a value of 2.1 ± 0.4 × 10^–12 cm·g^–1·s² for the resonant component of 3χ⁽³⁾. A value of 1.9 ± 0.9 × 10^–12 cm·g^–1·s² has been deduced for the nonresonant component of 3χ⁽³⁾. Copyright © 2011 John Wiley & Sons, Ltd.     

Extended X‐ray absorption fine structure and multiple‐scattering simulation of nickel dithiolene complexes Ni[S2C2(CF3)2]2n (n = −2, −1, 0) and an olefin adduct Ni[S2C2(CF3)2]2(1‐hexene)

A series of Ni dithiolene complexes Ni[S₂C₂(CF₃)]₂ⁿ (n = ?2, ?1, 0) ( 1 , 2 , 3 ) and a 1‐hexene adduct Ni[S₂C₂(CF₃)₂]₂(C₆H₁₂) ( 4 ) have been examined by Ni K‐edge X‐ray absorption near‐edge structure (XANES) and extended X‐ray absorption fine‐structure (EXAFS) spectroscopies. Ni XANES for 1 – 3 reveals clear pre‐edge features and approximately +0.7 eV shift in the Ni K‐edge position for `one‐electron' oxidation. EXAFS simulation shows that the Ni—S bond distances for 1 , 2 and 3 (2.11–2.16 Å) are within the typical values for square planar complexes and decrease by ～0.022 Å for each `one‐electron' oxidation. The changes in Ni K‐edge energy positions and Ni—S distances are consistent with the `non‐innocent' character of the dithiolene ligand. The Ni—C interactions at ～3.0 Å are analyzed and the multiple‐scattering parameters are also determined, leading to a better simulation for the overall EXAFS spectra. The 1‐hexene adduct 4 presents no pre‐edge feature, and its Ni K‐edge position shifts by ?0.8 eV in comparison with its starting dithiolene complex 3 . Consistently, EXAFS also showed that the Ni—S distances in 4 elongate by ～0.046 Å in comparison with 3 . The evidence confirms that the neutral complex is `reduced' upon addition of olefin, presumably by olefin donating the π‐electron density to the LUMO of 3 as suggested by UV/visible spectroscopy in the literature.     

Characterizing unusual metal substrates for gap‐mode tip‐enhanced Raman spectroscopy

In this article, the electromagnetic (EM) field in gap‐mode tip‐enhanced Raman spectroscopy (TERS) is investigated theoretically and experimentally for a range of commonly used and unusual metal and nonmetal substrates. By approaching a metal tip to a substrate, both form a coupled system that confines the EM field created at the tip apex. The influence of the substrate onto the EM field enhancement is observed in a top‐illumination gap‐mode TERS setup for different metal substrates. These include Au, the most commonly used substrate, and also a wide range of rarely or previously unused TERS substrates (Cu, Ag, Al, Pd, Pt, Ni, Ti, Mo, W, stainless steel, Al₂O₃, SiO₂). Self‐assembled monolayers of thiols and brilliant cresyl blue thin film samples are investigated experimentally on nine metal substrates, all showing considerable TERS enhancement. With finite difference time domain and finite element simulations used, the article provides a good estimate of the EM field enhancement for a wide range of substrates for users to estimate how well a substrate of choice will perform in a gap‐mode TERS experiment. The reduction in EM field strength |E²| compared with Au is less than an order of magnitude for many metals (Calculations: Cu 92%, Ag 81%, Ni 53%). This article experimentally shows that a wide variety of conductive substrates can be used, when one is willing to trade a fraction of the EM field enhancement. TERS was seen on all metal substrates including stainless steel, yet quantification was not always possible. These qualitative results were complemented with intensities from calculations. The wider variety of substrates will increase the applicability of TERS and evolve it one step further towards use in standard analytics. Copyright © 2012 John Wiley & Sons, Ltd.     

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

The transfer characteristics (I_D–V_G) of multilayers MoS₂ transistors with a SiO₂/Si backgate and Ni source/drain contacts have been measured on as‐prepared devices and after annealing at different temperatures (T_ann from 150 °C to 200 °C) under a positive bias ramp (V_G from 0 V to +20 V). Larger T_ann resulted in a reduced hysteresis of the I_D–V_G curves (from ～11 V in the as‐prepared sample to ～2.5 V after T_ann at 200 °C). The field effect mobility (～30 cm² V^–1 s^–1) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n‐type behaviour in the as‐prepared device to the appearance of a low current hole inversion branch after annealing. This latter effect indicates a modification of the Ni/MoS₂ contact that can be explained by the formation of a low density of regions with reduced Schottky barrier height (SBH) for holes embedded in a background with low SBH for electrons. Furthermore, a temperature dependent analysis of the subthreshold characteristics revealed a reduction of the interface traps density from ～9 × 10¹¹ eV^–1cm^–2in the as‐prepared device to ～2 × 10¹¹ eV^–1cm^–2after the 200 °C temperature–bias annealing, which is consistent with the observed hysteresis reduction.

Schematic representation of a back‐gated multilayer MoS₂ field effect transistor (left) and transfer characteristics (right) measured at 25 °C on an as‐prepared device and after the temperature–bias annealing at 200 °C under a positive gate bias ramp from 0 V to +20 V.     

Conformational analysis of 3,3‐dimethyl‐3‐silathiane, 2,3,3‐trimethyl‐3‐silathiane and 2‐trimethylsilyl‐3,3‐dimethyl‐3‐silathiane—preferred conformers,barriers to ring inversion and substituent effects

The first conformational analysis of 3‐silathiane and its C‐substituted derivatives, namely, 3,3‐dimethyl‐3‐silathiane 1 , 2,3,3‐trimethyl‐3‐silathiane 2 , and 2‐trimethylsilyl‐3,3‐dimethyl‐3‐silathiane 3 was performed by using dynamic NMR spectroscopy and B3LYP/6‐311G(d,p) quantum chemical calculations. From coalescence temperatures, ring inversion barriers ΔG^≠ for 1 and 2 were estimated to be 6.3 and 6.8 kcal/mol, respectively. These values are considerably lower than that of thiacyclohexane (9.4 kcal/mol) but slightly higher than the one of 1,1‐dimethylsilacyclohexane (5.5 kcal/mol). The conformational free energy for the methyl group in 2 (?ΔG° = 0.35 kcal/mol) derived from low‐temperature ¹³C NMR data is fairly consistent with the calculated value. For compound 2 , theoretical calculations give ΔE value close to zero for the equilibrium between the 2 ‐Me_ax and 2 ‐Me_eq conformers. The calculated equatorial preference of the trimethylsilyl group in 3 is much more pronounced (?ΔG° = 1.8 kcal/mol) and the predominance of the 3 ‐SiMe_{3 eq} conformer at room temperature was confirmed by the simulated ¹H NMR and 2D NOESY spectra. The effect of the 2‐substituent on the structural parameters of 2 and 3 is discussed. Copyright © 2010 John Wiley & Sons, Ltd.     

Vibrational Raman spectra of CdSx Se1‐x magic‐size nanocrystals

Resonant Raman scattering spectra of ultrasmall (<2 nm) magic‐size nanocrystals (NCs) are reported. The spectra of CdS and CdS_x Se_1‐x NCs, resonantly excited with 325 nm and 442 nm laser lines, correspondingly, reveal broad features in the range of bulk optical phonons. The relatively large width, ～50 cm^‐1, and downward shift, ～20 cm^‐1, of the Raman bands with respect to the longitudinal optical phonon in bulk crystals and large NCs are discussed based on the breaking of the translational symmetry and bond distortion in these ultrasmall NCs. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)