Enhanced electrical and optical properties of room temperature deposited Aluminium doped Zinc Oxide (AZO) thin films by excimer laser annealing

High quality transparent conductive oxides (TCOs) often require a high thermal budget fabrication process. In this study, Excimer Laser Annealing (ELA) at a wavelength of 248 nm has been explored as a processing mechanism to facilitate low thermal budget fabrication of high quality aluminium doped zinc oxide (AZO) thin films. 180 nm thick AZO films were prepared by radio frequency magnetron sputtering at room temperature on fused silica substrates. The effects of the applied RF power and the sputtering pressure on the outcome of ELA at different laser energy densities and number of pulses have been investigated. AZO films deposited with no intentional heating at 180 W, and at 2 mTorr of 0.2% oxygen in argon were selected as the optimum as-deposited films in this work, with a resistivity of 1×10⁻³ Ω.cm, and an average visible transmission of 85%. ELA was found to result in noticeably reduced resistivity of 5×10⁻⁴ Ω.cm, and enhancing the average visible transmission to 90% when AZO is processed with 5 pulses at 125 mJ/cm². Therefore, the combination of RF magnetron sputtering and ELA, both low thermal budget and scalable techniques, can provide a viable fabrication route of high quality AZO films for use as transparent electrodes.     

Structural,electrical and optical properties of sol–gel AZO thin films

Transparent conductive Al-doped zinc oxide (AZO) thin films were prepared by a sol–gel method and their structural, electrical and optical properties were systematically investigated. A minimum resistivity of 4.2 × 10⁻³ Ω cm was obtained for the 650 °C-annealed films doped with 1.0 at.% Al. All films had the preferential c-axis oriented texture according to the X-ray diffraction (XRD) results. Optical transmittance spectra of the films showed a high transmittance of over 85% in the visible region and the optical band gap of the AZO films broadened with increasing doping concentration.     

Low reflectance sputtered vanadium oxide thin films on silicon

Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100–700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200–2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.     

AZO/Ag/AZO multilayer films prepared by DC magnetron sputtering for dye-sensitized solar cell application

Ag films were deposited on Al-doped ZnO (AZO) films and coated with AZO to fabricate AZO/Ag/AZO multilayer films by DC magnetron sputtering on glass substrates without heating of glass substrates. The best multilayer films have low sheet resistance of 19.8 Ω/Sq and average transmittance values of 61% in visible region. It was found that the highest figure of merit (F_TC) is 6.9 × 10⁻⁴ Ω⁻¹. For the dye-sensitized solar cell (DSSC) application, the multilayer films were used as transparent conductive electrode (multilayer films/ZnO + Eosin-Y/LiI + I₂/Pt/FTO). The best DSSC based on the multilayer films showed that open circuit voltage (V_oc) of 0.47 V, short circuit current density (J_sc) of 2.24 mA/cm², fill factor (FF) of 0.58 and incident photon-to-current conversion efficiency (η) of 0.61%. It was shown that the AZO/Ag/AZO multilayer films have potential for application in DSSC.     

Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method

Transparent conductive Al-doped zinc oxide (AZO) films with highly (0 0 2)-preferred orientation were deposited on quartz substrates at room temperature by RF magnetron sputtering. Optimization of deposition parameters was based on RF power, Ar pressure in the vacuum chamber, and distance between the target and substrate. The structural, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, Hall measurement, and optical transmission spectroscopy. The 250 nm thickness AZO films with an electrical resistivity as low as 4.62 × 10⁻⁴ Ω cm and an average optical transmission of 93.7% in the visible range were obtained at RF power of 300 W, Ar flow rate of 30 sccm, and target distance of 7 cm. The optical bandgap depends on the deposition condition, and was in the range of 3.75-3.86 eV. These results make the possibility for light emitting diodes (LEDs) and solar cells with AZO films as transparent electrodes, especially using lift-off process to achieve the transparent electrode pattern transfer.     

Influence of Al-doped ZnO and Ga-doped ZnO substrates on third harmonic generation of gold nanoparticles

Principal role of substrate types on the nonlinear optical properties of Au NP was investigated. Third harmonic generation (THG) studies were carried out for Au NP deposited on the Al-doped ZnO (AuNP/AZO) and Ga-doped ZnO (AuNP/GZO) substrates at fundamental wavelength of 20 ns Er:glass laser (generating at 1540 nm wavelength) during photostimulation by the 532 nm 15 ns laser pulses. Sizes of Au NP were 5 nm, 10 nm, 20 nm, and 30 nm. The output signal was registered at 513 nm. The photoinduced power density was increased from 0 up to 800 MW/cm². So in our work we explore the role of the substrate on the optically stimulated non-linear optical properties during simultaneous photo stimulation near the inter-band transition. The results were studied depending on the type of substrate and the sizes of the deposited nanoparticles. The analysis was done within a framework of interaction between the photoinduced light and SPR wavelengths. Control of the photoinduced temperature was done.     

Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications

Quasi-crystal aluminum-doped zinc oxide (AZO) films were prepared by in situ radio frequency (RF) magnetron sputtering (sputtering without annealing) on glass substrates. The influence of deposition parameters on the optoelectronic and structural properties of the in situ deposited quasi-crystal AZO films was investigated in order to compare resulting samples. X-ray diffraction (XRD) patterns show that the quasi-crystal AZO thin films have excellent crystallization improved with increase of the RF power and substrate temperature, with an extremely preferential c-axis orientation exhibit sharp and narrow XRD pattern similar to that of single-crystal. Field emission scanning electron microscopy (FESEM) images show that quasi-crystal AZO thin films have uniform grains and the grain size increase with the increase of RF power and substrate temperature. Craters of irregular size with the columnar structure are observed in the quasi-crystal AZO thin films at a lower substrate temperature while many spherical shaped grains appeared at a higher substrate temperature. The average optical transmittance of all the quasi-crystal AZO films was over 85% in the 400-800 nm wavelength range. The resistivity of 4.176 × 10⁻⁴ Ω cm with the grain size of 76.4891 nm was obtained in the quasi-crystal AZO thin film deposited at 300 °C, under sputtering power of 140 W.     

Fabrication of bacterial cellulose thin films self-assembled from sonochemically prepared nanofibrils and its characterization

Bacterial cellulose (BC) film formation could be a critical issue in nanotechnology applications such as biomedical or smart materials products. In this research, purified pretreated BC was subjected to high intensity ultrasound (HIUS) and was investigated for the development of BC films. The morphological, structural and thermal properties of the obtained films were studied by using FE-SEM, AFM, FT-IR, XRD, TGA and DSC characterizations. Results showed that the most favorable purification treatment was the 0.01 M NaOH at 70 °C for 2 h under continuous stirring. The most suitable ultrasound operating conditions were found to be, 1 cm distance of ultrasonic probe from the bottom of the beaker, submerged in cold water bath cooling around 12 ± 2 °C. The power (25 W/cm²), time (30 min), BC concentration (0.1% w/w), amplitude (20 μm) and frequency (20 kHz) were maintained constant.     

Comparative study on structural and optical properties of ZnO thin films prepared by PLD using ZnO powder target and ceramic target

Zinc oxide thin films have been obtained in O₂ ambient at a pressure of 1.3 Pa by pulsed laser deposition (PLD) using ZnO powder target and ceramic target. The effect of temperature on structural and optical properties of ZnO thin films was investigated systematically by XRD, SEM, FTIR and PL spectra. The results show that the best structural and optical properties can be achieved for ZnO thin film fabricated at 700 °C using powder target and at 400 °C using ceramic target, respectively. The PL spectrum reveals that the efficiency of UV emission of ZnO thin film fabricated by using powder target is low, and the defect emission of ZnO thin film derived from Zn_i and O_i is high.     

The growth of ZnO:Ga:Cu as new TCO film of advanced electrical,optical and structural quality

Because of having similarities in many physical as well as chemical properties to those of Zn, Cu has been strategically used as an effective dopant e.g., Al, Ga, F, etc., to change the optical, electrical and the micro-structural properties of ZnO thin films for obtaining its favorable opto-electronic performance as a transparent conducting oxide suitable for devices. Present study demonstrates the growth of transparent conducting ZnO:Ga:Cu thin films, by low power RF magnetron sputtering at a low substrate temperature (100 °C). Highly crystalline ZnO:Ga:Cu film with preferred c-axis orientation has been obtained demonstrating a high magnitude of transmission ~85% in the visible range and a high electrical conductivity ~40 S cm^–1, facilitated by large crystallite size (~29 nm), introducing reduced grain boundary scattering. XPS O 1S spectrum reveals the presence of a significant fraction of oxygen atoms effectively increasing the optical transparency. Incorporation of Ga and Cu ions into the ZnO matrix promotes violation of the local translational symmetry as suggested by the relaxation of Raman selection rules for the network, evident by the presence of strong (B₁^high–B₁^low) modes which are typically Raman inactive. The consequences of Cu doping has been compared with identically prepared ZnO and ZnO:Ga films.     

Synthesis and evaluation of TiN–WC/TiN nanocomposite by the hybrid technique with arc ion plating and magnetron sputtering

By adjusting the power of WC target, novel TiN–WC films with different proportions of WC phase were prepared on TiN interlayer using the hybrid technique of arc ion plating (AIP) and magnetron sputtering (MS). The TiN–WC films were characterized by XRD, XPS, AFM, FESEM, Nano-indenter, and UMT-2MT tribometer. The TiN–WC film that is composed with TiN and WC phases was grown by 15–25 nm nanodotes along the primarily growth direction TiN (1 1 1) in AIP interlayer. Among the three TiN–WC films deposited at various powers of WC target, the TiN–WC2 (500 W) has the highest deposition rate of 1.4 nm/min. The content of WC phase increases as WC target power increases in the TiN–WC films. However, the deposition rate of TiN–WC film gains at first and then declines when WC target power exceeds 500 W because of the addictive poisoning of Ti target. In the present case, the incorporation of WC into TiN is found to result in a slight decrease in friction coefficient. Furthermore, the wear mechanism of multilayer AIP TiN films and MS TiN–WC/AIP TiN films was transformed from “severe wear” to “mild wear”. As a result, the 48TiN52WC film of 35 GPa hardness exhibits better tribological performance.     

Low-bias,high-temperature operation of an InAs–InGaAs quantum-dot infrared photodetector with peak-detection wavelength of 11.7 μm

We report on a low-bias InAs–InGaAs quantum-dot (QD) infrared photodetector (QDIP) with operating temperature of 150 K. Longwave-infrared (LWIR) detection at the peak wavelength of 11.7 μm was achieved. Peak specific photodetectivity D¹ of 1.7 × 10⁹ and 9.0 × 10⁷ cm Hz^1/2/W were obtained at the operating temperature T of 78 K and 150 K, respectively. A large photoresponsivity of 8.3 A/W and high photoconductive gain of 1100 were demonstrated at a low-bias voltage of V = 0.5 V at T = 150 K. The low-bias and high-temperature performance demonstration based on InAs–GaAs material systems indicates that the QDIP technology is promising for LWIR sensing and imaging.     

Evaluation on the air-borne ultrasound-assisted hot air convection thin-layer drying performance of municipal sewage sludge

The thin-layer drying behavior of the municipal sewage sludge in a laboratory-scale hot air forced convective dryer assisted with air-borne ultrasound was investigated in between 70 and 130 °C hot air temperatures. The drying kinetics in the convective process alone were compared to that for ultrasound-assist process at three ultrasound powers (30, 90, 150 W). The average drying rates within whole drying temperature range at ultrasound powers of 30, 90 and 150 W increased by about 22.6%, 27.8% and 32.2% compared with the convective drying alone (without ultrasound). As the temperature increasing from 70 °C to 130 °C, there were maximum increasing ratios for the effective moisture diffusivities of the sewage sludge in both falling rate periods at ultrasonic power of 30 W in comparison with other two high powers. In between the ultrasound powers of 0 and 30 W, the effect of the power on the drying rate was significant, while its effect was not obvious over 30 W. Therefore, the low ultrasonic power can be just set in the drying process. The values of the apparent activation energy in the first falling rate period were down from 13.52 to 12.78 kJ mol⁻¹, and from 17.21 to 15.10 kJ mol⁻¹ for the second falling rate period with increasing the ultrasonic power from 30 to 150 W. The values of the apparent activation energy in two falling rate periods with the ultrasound-assist were less than that for the hot air convective drying alone.     

Epitaxial ZnO thin films grown by pulsed electron beam deposition

In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction and atomic force microscopy. Optical absorption, resistivity and Hall effect measurements were performed in order to obtain the optical and electronic properties of the ZnO films. By a fine tuning of the deposition conditions, smooth, dense, stoichiometric and textured hexagonal ZnO films were epitaxially grown on (0001) sapphire at 700 °C with a 30° rotation of the ZnO basal plane with respect to the sapphire substrate. The average transmittance of the films reaches 90% in the visible range with an optical band gap of 3.28 eV. Electrical characterization reveals a high density of charge carrier of 3.4 × 10¹⁹ cm^?3 along with a mobility of 11.53 cm²/Vs. The electrical and optical properties are discussed and compared to ZnO thin films prepared by the similar and most well-known pulsed laser deposition method.     

Substrate bias effects during diamond like carbon film deposition by microwave ECR plasma CVD

Diamond like carbon (DLC) coatings were deposited on silicon(1 1 1) substrates by microwave electron cyclotron resonance (ECR) plasma CVD process using a plasma of Ar and CH₄ gases under the influence of DC self bias generated on the substrates by application of RF (13.56 MHz) power. DLC coatings were deposited under the varying influence of DC bias (−60 V to −150 V) on the Si substrates. Deposited films were analyzed by different techniques like: X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), Hardness and elastic modulus determination technique, Raman spectroscopy, scanning electron microscopy (SEM) and contact angle measurement. The results indicate that the film grown at −100 V bias has optimised properties like high sp³/sp² ratio of carbon bonding, high refractive index (2.26–2.17) over wide spectral range 400–1200 nm, low roughness of 0.8 nm, high contact angle (80°) compared to the films deposited at other bias voltages (−60 V and −150 V). The results are consistent with each other and find august explanation under the subplantation model for DLC growth.     

Characteristics of ZnO:In thin films prepared by RF magnetron sputtering

In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10⁻³ Ω cm.     

Oxidation of ultra-thin zinc films on Rh(100) surface

The oxidation of submonolayer zinc films on Rh(100) surface by O₂ gas has been studied using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and scanning tunneling microscopy (STM). With a zinc coverage of 0.8 ML, an atomically flat ultra-thin zinc oxide film formed at an oxygen partial pressure of 2 × 10^? 8 mbar and a temperature of 150 °C. The zinc oxide film showed a c(16 × 2) LEED pattern. The high resolution STM image of the zinc oxide film showed single dotted spots and double dotted spots arranged linearly and periodically along the [01¯1] direction. We propose an atomic arrangement model of the film accounting for the LEED pattern, the STM image, and the atomic arrangement of the bulk ZnO(0001) surface.     

Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

Vanadium oxide thin films were grown by RF magnetron sputtering from a V₂O₅ target at room temperature, an alternative route of production of vanadium oxide thin films for infrared detector applications. The films were deposited on glass substrates, in an argon–oxygen atmosphere with an oxygen partial pressure from nominal 0% to 20% of the total pressure.X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) analyses showed that the films were a mixture of several vanadium oxides (V₂O₅, VO₂, V₅O₉ and V₂O₃), which resulted in different colors, from yellow to black, depending on composition. The electrical resistivity varied from 1 mΩ cm to more than 500 Ω cm and the thermal coefficient of resistance (TCR), varied from −0.02 to −2.51% K⁻¹.Computational thermodynamics was used to simulate the phase diagram of the vanadium–oxygen system. Even if plasma processes are far from equilibrium, this diagram provides the range of oxygen pressures that lead to the growth of different vanadium oxide phases. These conditions were used in the present work.     

Investigation of reduced graphene oxide effects on ultra-violet detection of ZnO thin film

The reduced graphene oxide (rGO) incorporated ZnO thin films were fabricated by dip-coating method. The Raman and FT-IR spectra of 0.075 wt% incorporated composite film showed reduction of GO in composite film. The transmittanceProd. Type: FTP spectra have shown that rGO incorporation increase the visible light absorption of ZnO thin film while the calculated band gaps of samples were decreased from 3.28 to 3.25 eV by increasing the rGO content. The linear trend of I–V curve suggests an ohmic contact between ZnO and rGO. Besides, it was found that by increasing the rGO content, the electrical resistivity was decreased from 4.32×10² Ω cm for pure ZnO film to 2.4×10¹ Ω cm for 0.225 wt% rGO incorporated composite film. The composite photodetectors not only possessed a desirable UV photosensitivity, but also the response time of optimum sample containing 0.075 wt% rGO was reduced to about one-half of pure ZnO thin film. Also, the calculated signal to noise (SNR) showed that highly conductive rGO in composite thin films facilitate the carrier transportation by removing the trapping centers. The mechanism of photoresponsivity improvement of composite thin films was proposed by carrier transportation process.     

Effect of in vacuo surface pre-treatment on the growth kinetics and chemical constitution of ultra-thin oxide films on Al–Mg alloy substrates

The effect of in vacuo substrate surface pre-treatment on the growth kinetics and chemical constitution of ultra-thin (<3 nm) oxide films grown on bare Al–1.1 at.% Mg alloy surfaces was studied by a combined experimental approach of real-time in situ spectroscopic ellipsometry (RISE) and angle-resolved X-ray photoelectron spectroscopy (AR-XPS). One alloy surface pre-treatment prior to oxidation consisted of the removal of the native oxide and other contaminants on the alloy surface by sputter-cleaning under UHV conditions. A second surface pre-treatment involved exposing such sputter-cleaned surfaces to a short in vacuo annealing step at 460 K. Next, ultra-thin (<3 nm) oxide films were grown on these two pre-treated alloy surfaces by exposure to O₂(g) within the temperature range of T = 300–485 K (at pO₂ = 1 × 10^?4 Pa). It was found that, as long as the chemical segregation of Mg from the alloy’s interior to the alloy/oxide interface is kinetically hindered, the oxide-film growth kinetics, the developing oxide-film constitution, as well as the local chemical states of the Al and Mg cations in the oxide layer depend strongly on the alloy surface pre-treatment. At T ? 450 K, the thermally-activated interfacial segregation of Mg becomes pronounced and, only then, the developing oxide-film constitution is approximately independent of the surface pre-treatment.