Nitridation of Niobium Pentoxide Films in Ammonia by Rapid Thermal Processing

The feasibility of niobium oxynitride formation through nitridation of niobium pentoxide films in ammonia by rapid thermal processing (RTP) was investigated. Niobium films 200 and 500 nm thick were deposited by sputtering on Si(100) wafers covered by a 100 nm thick thermally grown SiO₂ layer. These as‐deposited films exhibited distinct texture effects. They were processed in three steps using an RTP system. The as‐deposited niobium films were first nitridated in an ammonia atmosphere at 1000 °C for 1 min and then oxidised in molecular oxygen at temperatures ranging from 400 to 600 °C. Those samples in which a single Nb₂O₅ phase was determined after oxidation were additionally nitridated in ammonia at 1000 °C for 1 min. Investigations show that surface roughness of the samples after oxidation of niobium films first nitridated in ammonia is lower than after direct oxidation of as‐deposited films in oxygen, although the niobium pentoxide phase formed after annealing was the same in both cases. We explain this result as being due to the large expansion of the niobium lattice during the direct oxidation of the niobium film in molecular oxygen and also to the high oxidation rate of the as‐deposited niobium film in oxygen. By incorporation of oxygen in the crystal lattice of niobium and rapid formation of niobium pentoxide, substantial intrinsic stress was built up in the film, frequently resulting in delamination of the film from the substrate. Nitrogen hinders the diffusion of oxygen in nitridated films, which leads to a decrease of the oxidation rate and thus slower formation of Nb₂O₅. Nitridation of the completely oxidised niobium films in ammonia leads to the formation of niobium oxynitride and niobium nitride phases.     

激光促进甲醇氧化偶联表面反应的规律

用沉淀法制备了Ｌｉ３ＰＯ４、ＢｉＰＯ４和Ｌｉ３ＰＯ４、ＢｉＰＯ４三种固体表面材料,并用ＸＲＤ、ＩＲ、ＴＰＤ和激光促进表面反应（ＬＳＳＲ）等技术研究了这些固体表面上甲醇氧化偶联生成乙二醇的反应规律。实验结果表明：甲醇在固体材料表面的Ｐ＝９键上产生Ｃ－Ｈ端的分子态吸附,在表面的Ｌｅｗｉｓ酸位（金属离子）上产生解离态吸附。Ｌｉ３ＰＯ４和ＢｉＰＯ４的相互作用可促进甲醇在固体表面上的分子态吸附而抑制解离态吸     

Nitridation of niobium films by rapid thermal processing: different behaviour of films on oxydized silicon and monocrystalline sapphire substrates

By electron beam evaporation and RF magnetron sputtering 500 nm thick niobium films were deposited on thermally oxidized Si-(100)-wafers and by RF magnetron sputtering on monocrystalline sapphire-(1-102)-wafers. Investigations by scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed differences of the film morphology depending on the substrate used: films deposited on SiO₂ exhibited an even surface with small crystallites, films on sapphire showed parallel surface structures with relatively large and well-shaped crystallites pointing at regular crystal growth influenced by the substrate. These differences in film morphology were also reflected in different reflection intensities of the films in XRD patterns, indicating that the films deposited on sapphire were strongly textured. In a first set of experiments nitridation in molecular nitrogen and ammonia was investigated. In a second set of experiments, it was tried to form oxynitrides of niobium by annealing the nitrided films in molecular oxygen. Particularly by X-ray-diffraction the formation of different nitride and oxide phases in dependence of the reaction temperature was examined. Further, elemental depth profiles were recorded by secondary ion mass spectrometry (SIMS) to track the position of the phases formed in the film. The different substrates led to disparate film reactivities, resulting in different nitridation grades of the films at similar reaction temperatures. In general, larger crystallite sizes resulted in less chemical reactivity of the films: even after nitridation at 1000 °C metallic niobium was still present in films deposited on sapphire. However, no evidence was obtained for the formation of oxynitrides by the process sequence observed.     

Nitridation of niobium oxide films by rapid thermal processing

The possibility of forming niobium oxynitride through the nitridation of niobium oxide films in molecular nitrogen by rapid thermal processing (RTP) was investigated. Niobium films 200 and 500 nm thick were deposited via sputtering onto Si(100) wafers covered with a thermally grown SiO₂ layer 100 nm thick. These as-deposited films exhibited distinct texture effects. They were processed in two steps using an RTP system. The as-deposited niobium films were first oxidized under an oxygen atmosphere at 450 °C for various periods of time and subsequently nitridated under a nitrogen atmosphere at temperatures ranging from 600 to 1000 °C for 1 min. Investigations of the oxidized films showed that samples where the start of niobium pentoxide formation was detected at the surface and the film bulk still consisted of a substoichiometric NbO_x phase exhibited distinctly lower surface roughness and microcrack densities than samples where complete oxidation of the film to Nb₂O₅ had occurred. The niobium oxide phases formed at the Nb/substrate interface also showed distinct texture. Zones of niobium oxide phases like NbO and NbO₂, which did not exist in the initial oxidized films, were formed during the nitridation. This is attributed to a “snow-plough effect” produced by the diffusion of nitrogen into the film, which pushes the oxygen deeper into the film bulk. These oxide phases, in particular the NbO₂ zone, act as barriers to the in-diffusion of nitrogen and also inhibit the outdiffusion of oxygen from the SiO₂ substrate layer. Nitridation of the partially oxidized niobium films in molecular nitrogen leads to the formation of various niobium oxide and nitride phases, but no indication of niobium oxynitride formation was found. Figure Schematic representation of the phase distribution in 200 nm Nb film on SiO₂/Si substrate after two steps annealing using an RTP system. The plot below represents the SIMS depth profiles of the nitridated sample with the phase assignment     

Surface reaction of alkynes and alkenes with H-Si(111): a density functional theory study

Recent experiments on the addition of alkene and alkyne molecules to H-terminated silicon surfaces have provided evidence for a surface chain reaction initiated at isolated Si dangling bonds and involving an intermediate carbon radical state, which, after abstraction of a hydrogen atom from a neighboring Si-H unit, transforms into a stable adsorbed species plus a new Si dangling bond. Using periodic density functional theory (DFT) calculations, together with an efficient method for determining reaction pathways, we have studied the initial steps of this chain reaction for a few different terminal alkynes and alkenes interacting with an isolated Si dangling bond on an otherwise H-saturated Si(111) surface. Calculated minimum energy pathways (MEPs) indicate that the chain mechanism is viable in the case of C(2)H(2), whereas for C(2)H(4) the stabilization of the intermediate state is so small and the barrier for H-abstraction so (relatively) large that the molecule is more likely to desorb than to form a stable adsorbed species. For phenylacetylene and styrene, stabilization of the intermediate state and decrease of the H-abstraction barrier take place. While a stable adsorbed species exists in both cases, the overall heat of adsorption is larger for the alkyne molecules.     

Nature of point defects on SiO2/Mo(112) thin films and their interaction with Au atoms

We have studied by means of periodic DFT calculations the structure and properties of point defects at the surface of ultrathin silica films epitaxially grown on Mo(112) and their interaction with adsorbed Au atoms. For comparison, the same defects have been generated on an unsupported silica film with the same structure. Four defects have been considered: nonbridging oxygen (NBO, [triple bond]Si-O(*)), Si dangling bond (E' center, [triple bond]Si(*)), oxygen vacancy (V(O), [triple bond]Si-Si[triple bond]), and peroxo group ([triple bond]Si-O-O-Si[triple bond]), but only the NBO and the V(O) centers are likely to form on the SiO(2)/Mo(112) films under normal experimental conditions. The [triple bond]Si-O(*) center captures one electron from Mo forming a silanolate group, [triple bond]Si-O(-), sign of a direct interaction with the metal substrate. Apart from the peroxo group, which is unreactive, the other defects bind strongly the Au atom forming stable surface complexes, but their behavior may differ from that of the same centers generated on an unsupported silica film. This is true in particular for the two most likely defects considered, the nonbridging oxygen, [triple bond]Si-O(*), and the oxygen vacancy, [triple bond]Si-Si[triple bond].     

Nitridation of γ‐TiAl alloys by direct metal–gas reaction at 1000–1300 K

Two γ‐TiAl alloys, Ti‐47at%Al‐2at%Nb‐2at%Cr (MJ12) and Ti‐47at%Al‐2at%Nb‐2at%Mn‐0.8at%TiB₂ (MJ47), were nitrided by direct metal–gas reaction at 1000–1300 K in 10 cm³s^?1NH₃. X‐ray diffraction revealed formation of TiN at 1100–1300 K. Knoop microhardness values of the alloys were increased with an increase in the nitridation temperature. Microhardness values of MJ12 and MJ47 with 1300 K nitridation were respectively improved to 1.65 and 1.38 times those of the controls. Nitridation depth at a variety of temperature determined by Rutherford backscattering spectrometry was increased with an increase in the temperature. Ti, Al and N concentrations at a variety of depths analysed by scanning electron microscopy and energy dispersive X‐ray linescanning are also explained. Copyright © 2005 John Wiley & Sons, Ltd.     

Characterization of transition metal nitride formation in rapid thermal processing (RTP)

The potential of RTP for the preparation of transition metal nitrides by reaction of metal thin films in molecular nitrogen was investigated. The films and the nitridation process were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive x-ray analysis (EDX) in a scanning electron microscope (SEM) and secondary neutral mass spectrometry (SNMS). The chemical states of vanadium at the utmost surface, detected by XPS, are related to V₂O₅ before RTP and to vanadium nitride, oxide and oxynitride after RTP. The deposition of a 3 nm Si top layer prevents V from oxidation and its selective removal before RTP enhances the proportion of nitride determined by XPS after RTP. From comparative experiments in a conventional tube furnace the advantages of RTP became obvious. With short process times of the RTP technique the integral amount of residual oxygen is kept low and oxide formation is largely avoided. The nitrogen content and the different polycrystalline phases formed by varying process time and temperature provide information about reactivity and the nitridation process. The nitrogen to vanadium ratio was determined by EDX and SNMS, revealing that the N content reaches saturation after only 5 seconds at 1100?°C.     

Sodium interacting with amorphous water films at 10 and 100 k

In the present study, we compare the adsorption of Na on amorphous D(2)O ice films, held at 10 and 100 K. OH, D(2)O, and Na are easily distinguished by their characteristic signatures in metastable impact electron spectroscopy (MIES). It is found that at 10 K substrate temperature the donation of 3sNa charge to the ice film, which is regarded as a precursor for water deprotonation, is significantly reduced relative to 100 K. This observation is discussed on the basis of recent theoretical work, suggesting that a rearrangement of the water molecules at the outermost water surface is the prerequisite for hydration/solvation of the 3sNa electron in the water ice bulk. The MIES spectra, showing spectral features from both OH and D(2)O, can be interpreted as reflecting the composition of the Na-water complexes in the near surface region. The relative intensity of the OH and D(2)O features is the same for 10 and 100 K. This finding suggests that two different sites for Na adsorption exist, one on the perfect water network and the other at OH dangling bond sites whereby, at 10 K, only the latter one leads to deprotonation of D(2)O. Finally, charge exchange phenomena observed when applying electron spectroscopies to ice films are discussed.     

Overall water splitting on (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution photocatalyst: relationship between physical properties and photocatalytic activity

The physical and photocatalytic properties of a novel solid solution between GaN and ZnO, (Ga(1-x)Zn(x))(N(1-x)O(x)), are investigated. Nitridation of a mixture of Ga(2)O(3) and ZnO at 1123 K for 5-30 h under NH(3) flow results in the formation of a (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution with x = 0.05-0.22. With increasing nitridation time, the zinc and oxygen concentrations decrease due to reduction of ZnO and volatilization of zinc, and the crystallinity and band gap energy of the product increase. The highest activity for overall water splitting is obtained for (Ga(1-x)Zn(x))(N(1-x)O(x)) with x = 0.12 after nitridation for 15 h. The crystallinity of the catalyst is also found to increase with increasing the ratio of ZnO to Ga(2)O(3) in the starting material, resulting in an increase in activity.     

Initial stage of Si(001) surface oxidation from first-principles calculations

A comprehensive density-functional theory (DFT) study of the atomic structure, electronic properties, and optical response of the Si(001) surface at the initial stages of oxidation is presented. The most favored adsorption position of a single O atom on top of the (4 x 2)-reconstructed Si(001) surface is found at the back-bond of the "down" Si dimer atom. There is no energy barrier for oxygen insertion into this bond. The ionization energy of the surface reaches a maximum when the oxidation of the second Si monolayer starts. Oxidation leads to an increase of the energy gap between occupied and empty surface states. The calculated reflectance anisotropy spectroscopy (RAS) data in comparison with experiment suggest a considerable amount of surface disorder already after oxidation of the first monolayer.     

Influence of the Native Oxide Layer on the Silicon Surface During Initial Stages of Nitridation

 Thin SiO₂ layers were produced by thermal oxidation of Si wafer material. To study the effect of nitridation on the oxide layers, the specimens were nitrided in a furnace at high temperature. Non-destructive ion beam analysis was performed to determine changes in the elemental concentrations and depth profiles of the major components. In particular, N and O concentrations were measured using the non-resonant nuclear reactions ¹⁴N(d, α)¹²C and ¹⁶O(d, p)¹⁷O, respectively. To obtain depth profiles of the as-prepared and nitrided specimens, the samples were measured with RBS and heavy ion elastic recoil detection analysis. The ion beam analyses revealed an increase in thickness of the SiO₂ layers with temperature. The specimens nitrided at 1200 °C were almost free of N. Surface topology investigations with scanning electron microscopy revealed concentric annular artificial patterns at the surfaces. In the centre of the pattern, only silicon was measured. Additionally, a band consisting of Si, O, and N surrounding the pattern was discovered. The findings are in agreement with specimens prepared at higher temperatures. Received June 19, 2000. Revision December 9, 2000.     

Relationships in synthesis of chromium nitride by combustion of ferrochrome in nitrogen

Nitridation of commercial ferrochrome in the self-propagating high-temperature synthesis mode was studied. The influence of the key parameters of the process (nitrogen pressure, sample diameter, particle size distribution of the initial powder) on synthesis and phase composition of the combustion products was elucidated. The microstructural features of nitrided ferrochrome and chromium nitride were examined by electron microscopy. Acid enrichment of the synthesis products in a hydrochloric acid solution was studied in relation to the composition of nitrided ferrochrome. Chromium nitride with the residual iron content of 0.3 wt% was obtained, and its thermal stability and corrosion resistance were examined.     

Mechanisms for NH3 decomposition on Si(100)-(2 x 1) surface: a quantum chemical cluster model study

In this paper, we present a detailed mechanism for the complete decomposition of NH3 to NHx(a) (x = 0-2). Our calculations show that the initial decomposition of NH3 to NH2(a) and H(a) is facile, with a transition-state energy 7.4 kcal mol-1 below the vacuum level. Further decomposition to N(a) or recombination-desorption to NH3(g) is hindered by a large barrier of approximately 46 kcal mol-1. There are two plausible NH2 decomposition pathways: 1) NH2(a) insertion into the surface Si-Si dimer bond, and 2) NH2(a) insertion into the Si-Si backbond. We find that pathway (1) leads to the formation of a surface Si = N unit, similar to a terminal Si = Nt pair in silicon nitride, Si3N4, while pathway (2) leads to the formation of a near-planar, subsurface Si3N unit, in analogy to a central nitrogen atom (Nc) bounded to three silicon atoms in the Si3N4 environment. Based on these results, a plausible microscopic mechanism for the nitridation of the Si(100)-(2 x 1) surface by NH3 is proposed.     

The influence of processing parameters on the fabrication of Si3N4 wires

Silicon nitride (Si₃N₄) wires have been prepared by means of carbothermal reduction followed by the nitridation (CTRN) of silica gel containing ultrafine decomposed saccharose. The influence of temperature of reaction and mass ratio of carbon to silicon $ \left( \frac{C}{Si} \right) $ on the synthesis of Si₃N₄ wires were studied. The presence of nitrogen gas in the pores of gel at high temperature starts the CTRN reaction leading to the formation of Si₃N₄ wires. The results show that the Si₃N₄ was fully formed with two kinds of morphologies including globular and wire with a width of 100–500 nm and length of several microns at sintering temperature of 1,400 °C by employing the mass ratio of $ \frac{C}{Si} \; = \;0.5 $ . The infrared adsorption of the wires exhibits absorption bands related to the absorption peaks of Si–N bond of Si₃N₄. The thermal analysis results reveal that carbothermal nitridation reaction was completed at temperature of 1,400 °C.     

Density functional study of XH4 (XSi and Ge) reactivity upon dissociative adsorption onto the Si(100) surface

Total energy calculations based on density functional theory (DFT) with generalized gradient approximation (GGA) and ultrasoft pseudopotential approximation and an analysis tool of atom‐resolved density of states (ADOS) have been used to investigate (1) the energetic profiles for the possible initial dissociative adsorption of XH₄ (X?Si and Ge) onto the Si(100)? (2 × 2) surface to evaluate their reactivity and (2) the effect of surface electronic states of Si(100)? (2 × 2) on gaseous molecular precursors XH₄ (X?Si and Ge) during initial dissociative adsorption to understand the factors governing their reactivity. Our calculated lower‐energy barrier for initial dissociative adsorption of GeH₄ is due to the forming of stronger bond of Si? H between H within GeH₄ and buckled‐down Si atom on the Si(100)? (2 × 2) surface accompanying the larger extent of unbuckling of the buckled Si?Si dimer on the Si(100)? (2 × 2) surface at the transition state. Our evaluated better reactivity for GeH₄ than SiH₄ (a factor of around 14.6) is slightly larger than observed higher reactivity for GeH₄ than SiH₄ (a factor of between 2 and 5 depending on the incident kinetic energy) employed supersonic molecular bean techniques. Finally, our calculated ADOS indicate that the surface electronic states of buckled Si?Si dimer on the Si(100)? (2 × 2) surface energetically favorably participate in the transition state during GeH₄ initial dissociative adsorption to reduce the energy barrier, i.e., enhance its reactivity, in comparison with SiH₄ initial dissociative adsorption onto the Si(100)? (2 × 2) surface under the same reaction conditions. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Nitridation under ammonia of high surface area vanadium aerogels

Vanadium pentoxide gels have been obtained from decavanadic acid prepared by ion exchange on a resin from ammonium metavanadate solution. The progressive removal of water by solvent exchange in supercritical conditions led to the formation of high surface area V₂O₅, 1.6H₂O aerogels. Heat treatment under ammonia has been performed on these aerogels in the 450-900 °C temperature range. The oxide precursors and oxynitrides have been characterized by XRD, SEM, TGA, BET. Nitridation leads to divided oxynitride powders in which the fibrous structure of the aerogel is maintained. The use of both very low heating rates and high surface area aerogel precursors allows a higher rate and a lower threshold of nitridation than those reported in previous works. By adjusting the nitridation temperature, it has been possible to prepare oxynitrides with various nitrogen enrichment and vanadium valency states. Whatever the V(O,N) composition, the oxidation of the oxynitrides in air starts between 250 and 300 °C. This determines their potential use as chemical gas sensors at a maximum working temperature of 250 °C.     

Effect of Hydrogen on O2 Adsorption and Dissociation on a TiO2 Anatase (001) Surface

The effect of hydrogen on the adsorption and dissociation of the oxygen molecule on a TiO₂ anatase (001) surface is studied by first‐principles calculations coupled with the nudged elastic band (NEB) method. Hydrogen adatoms on the surface can increase the absolute value of the adsorption energy of the oxygen molecule. A single H adatom on an anatase (001) surface can lower dramatically the dissociation barrier of the oxygen molecule. The adsorption energy of an O₂ molecule is high enough to break the O?O bond. The system energy is lowered after dissociation. If two H adatoms are together on the surface, an oxygen molecule can be also strongly adsorbed, and the adsorption energy is high enough to break the O?O bond. However, the system energy increases after dissociation. Because dissociation of the oxygen molecule on a hydrogenated anatase (001) surface is more efficient, and the oxygen adatoms on the anatase surface can be used to oxidize other adsorbed toxic small gas molecules, hydrogenated anatase is a promising catalyst candidate.     

XPS study of a laser-nitrided iron surface using a focused pulsed Nd:YAG laser under various conditions

Laser nitridation of a pure iron (Fe) surface was conducted using a focused pulsed Nd:YAG laser under a nitrogen atmosphere, and the effects of nitrogen gas pressure, laser power, and repetition number of laser shots on the surface characteristics were analyzed using XPS. The laser-irradiated surface consisted of the topmost surface layer of Fe oxynitride (FeO_xN_y) and the underlayer beneath, which mainly comprised Fe nitride (Fe₄N). The topmost surface layer is a post-formed layer due to the oxidation of the nitride layer. The thickness of the underlayer corresponding to the original nitride layer drastically increased under nitrogen gas at atmospheric pressure. Increasing the repetition number of laser shots enhanced layer thickness up to 5 shots, after which no change was observed. Moreover, the layer thickness increased monotonically with increasing laser power. Nitridation through pulsed laser irradiation was likely predominated by the melting and resolidification of a specific surface area, as well as the convection of nitrogen therein. Thickness variation under various conditions can be explained appropriately using this assumption.     

Conversion of N2O to N2 on MgO （001） Surface with Vacancy： A DFT Study

The adsorption and decomposition of NzO at regular and defect sites of MgO (001) surface have been studied using cluster models embedded in a large array of point charges (PCs) by DFT/B3LYP method. The results indicate that the MgO (001)surface with oxygen vacancies exhibits high catalytic reactivity toward N2O adsorptive-decomposition. It is different from the regular MgO surface or the surface with magnesium vacancies.Much elongation of O—N bond of N2O after adsorption at oxy-gen vacancy site with O end down shows that O—N bond has been broken with concurrent production of N2, leaving a regu-lar site instead of the original oxygen vacancy site (F center ).The MgO (001) surface with magnesium vacancies hardly ex-hibits catalytic reactivity. It can be concluded that N2O dissoci-ation likely occurs at oxygen vacancy sites of MgO (001) sur-face, which is consistent with the generally accepted viewpoint in the experiments. The potential energy surface (PES) reflects that the dissociation process of N2O does not virtually need to surmount a given energy barrier.