Thin film analysis in the nanometer scale

A survey is presented on the present state of the art in analytical transmission electron microscopy (ATEM). An essential advantage of this method is the simultaneous use of imaging, analytical and microdiffraction techniques with a lateral resolution in the 1.5 nm range. Two different analytical techniques are frequently used as ATEM attachments, energy dispersive X-ray spectrometry (EDXS) and electron energy loss spectrometry (EELS). Microscopic images with nanometer resolution may be also produced by energy selected imaging (ESI) with characteristic energy loss electrons. Advantages and limitations of all these methods will be discussed using actual material problems in the field of thin film research.     

New Tools for Investigating Electromagnetic Hot Spots in Single‐Molecule Surface‐Enhanced Raman Scattering

Surface‐enhanced Raman scattering (SERS) is quickly growing as an analytical technique, because it offers both molecular specificity and excellent sensitivity. For select substrates, SERS can even be observed from single molecules, which is the ultimate limit of detection. This review describes recent developments in the field of single‐molecule SERS (SM‐SERS) with a focus on new tools for characterizing SM‐SERS‐active substrates and how they interact with single molecules on their surface. In particular, techniques that combine optical spectroscopy and microscopy with electron microscopy are described, including correlated optical and transmission electron microscopy, correlated super‐resolution imaging and scanning electron microscopy, and correlated optical microscopy and electron energy loss spectroscopy.     

Application of internal conversion electron spectrometry to analysis of A243Cm/244Cm mixture

Alpha-ray spectrometry is at present a powerful analytical tool for the identification and assay of the transuranium elements. However, the energy resolution is not necessarily excellent and a tailing toward the lower energy side in the spectrum is observed. Then, the possibility utilizing internal conversion electron spectrometry as the improved analytical tool was examined. In this paper the construction of an internal conversion electron spectrometer with excellent energy resolution using a silicon surface barrier detector and its application to analysis of a mixture of²⁴³Cm/²⁴⁴Cm is described.     

Matrix vapor deposition/recrystallization and dedicated spray preparation for high‐resolution scanning microprobe matrix‐assisted laser desorption/ionization imaging mass spectrometry (SMALDI‐MS) of tissue and single cells

Matrix preparation techniques such as air spraying or vapor deposition were investigated with respect to lateral migration, integration of analyte into matrix crystals and achievable lateral resolution for the purpose of high‐resolution biological imaging. The accessible mass range was found to be beyond 5000 u with sufficient analytical sensitivity. Gas‐assisted spraying methods (using oxygen‐free gases) provide a good compromise between crystal integration of analyte and analyte migration within the sample. Controlling preparational parameters with this method, however, is difficult. Separation of the preparation procedure into two steps, instead, leads to an improved control of migration and incorporation. The first step is a dry vapor deposition of matrix onto the investigated sample. In a second step, incorporation of analyte into the matrix crystal is enhanced by a controlled recrystallization of matrix in a saturated water atmosphere. With this latter method an effective analytical resolution of 2 µm in the x and y direction was achieved for scanning microprobe matrix‐assisted laser desorption/ionization imaging mass spectrometry (SMALDI‐MS). Cultured A‐498 cells of human renal carcinoma were successfully investigated by high‐resolution MALDI imaging using the new preparation techniques. Copyright © 2010 John Wiley & Sons, Ltd.     

Analytical atomic spectrometry and imaging: Looking backward from 2020 to 1975

Some general aspects of the evolution of atomic spectrometry for chemical analysis over the period 1975 to now are described. Performance parameters such as detection limits and spatial analytical potential (lateral and depth resolution) are compared with the evolution of integrated circuit technology as described in Moore's Law. A few general trends of future development for the coming decade are postulated. Attention will be focused on analysis and imaging with beam techniques, especially secondary ion mass spectrometry and X-ray techniques on the basis of excitation with synchrotron radiation.     

High-resolution analytical TEM of nanostructured materials

This paper briefly reviews the potential applicability of analytical transmission electron microscopy (TEM) to elucidate both structural and chemical peculiarities of materials at high lateral resolution. Examples of analytical TEM investigations performed by energy-dispersive X-ray spectroscopy (EDXS), electron energy loss spectroscopy (EELS), and energy-filtered TEM (EFTEM) are presented for different materials systems including metals, ceramics, and compound semiconductors. In particular, results are given of imaging the element distribution in the interface region between gamma matrix and gamma' precipitate in the nickel-based superalloy SC16 by energy-filtered TEM. For core-shell structured BaTiO(3) particles the chemical composition and even the chemical bonding were revealed by EELS at a resolution of about 1 nm. A sub-nanometer resolution is demonstrated by energy-selective images of the Ga distribution in the surrounding of (In,Ga)As quantum dots. Moreover, the element distribution in (Al,Ga)As/AlAs multilayers with linear concentration gradients in a range of about 10 nm was investigated by EDXS line-profile analyses and EFTEM.     

Improvement of depth resolution of ADF-SCEM by deconvolution: effects of electron energy loss and chromatic aberration on depth resolution

Scanning confocal electron microscopy (SCEM) is a new imaging technique that is capable of depth sectioning with nanometer-scale depth resolution. However, the depth resolution in the optical axis direction (Z) is worse than might be expected on the basis of the vertical electron probe size calculated with the existence of spherical aberration. To investigate the origin of the degradation, the effects of electron energy loss and chromatic aberration on the depth resolution of annular dark-field SCEM were studied through both experiments and computational simulations. The simulation results obtained by taking these two factors into consideration coincided well with those obtained by experiments, which proved that electron energy loss and chromatic aberration cause blurs at the overfocus sides of the Z-direction intensity profiles rather than degrade the depth resolution much. In addition, a deconvolution method using a simulated point spread function, which combined two Gaussian functions, was adopted to process the XZ-slice images obtained both from experiments and simulations. As a result, the blurs induced by energy loss and chromatic aberration were successfully removed, and there was also about 30% improvement in the depth resolution in deconvoluting the experimental XZ-slice image.     

Real‐time lock‐in energy loss imaging with a novel high‐speed image processing CCD video camera

We have developed a high‐speed image processing CCD video camera for real‐time energy‐loss imaging using a conventional electron microscope with an energy‐loss imaging facility. As an initial demonstration of real‐time lock‐in energy‐loss imaging, a background‐subtracted energy‐loss image was observed by attaching the high‐speed image processing CCD video camera to an analytical electron microscope equipped with a floating‐type energy‐loss imaging analyser. Copyright © 2003 John Wiley & Sons, Ltd.     

Spectroscopic imaging techniques for characterization of polymer morphologies: a combination of infrared and electron microscopy

The morphological characterization of polymer blends consisting of polyamide and poly(tetrafluoroethylene) using FT-IR spectroscopy and electron microscopy is described. To enhance the lateral resolution - one of the main limits in infrared spectroscopy - a combination with scanning electron microscopy and analytical electron microscopic methods of a transmission electron microscope was made. The possibilities of electron energy loss spectroscopy and energy filtered transmission electron microscopy (EFTEM) in the area of polymer characterization are outlined.     

Towards nanometric resolution in multilayer depth profiling: a comparative study of RBS, SIMS, XPS and GDOES

An increasing amount of effort is currently being directed towards the development of new functionalized nanostructured materials (i.e., multilayers and nanocomposites). Using an appropriate combination of composition and microstructure, it is possible to optimize and tailor the final properties of the material to its final application. The analytical characterization of these new complex nanostructures requires high-resolution analytical techniques that are able to provide information about surface and depth composition at the nanometric level. In this work, we comparatively review the state of the art in four different depth-profiling characterization techniques: Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and glow discharge optical emission spectroscopy (GDOES). In addition, we predict future trends in these techniques regarding improvements in their depth resolutions. Subnanometric resolution can now be achieved in RBS using magnetic spectrometry systems. In SIMS, the use of rotating sample holders and oxygen flooding during analysis as well as the optimization of floating low-energy ion guns to lower the impact energy of the primary ions improves the depth resolution of the technique. Angle-resolved XPS provides a very powerful and nondestructive technique for obtaining depth profiling and chemical information within the range of a few monolayers. Finally, the application of mathematical tools (deconvolution algorithms and a depth-profiling model), pulsed sources and surface plasma cleaning procedures is expected to greatly improve GDOES depth resolution.     

Analytical electron microscopy of materials

Analytical electron microscopy enables combined crystallographic and chemical information with a high spatial resolution to be gained from microregions of electron-transparent specimens. This is reached by the combined application of imaging, diffraction and spectroscopic methods, using either a dedicated scanning transmission electron microscope or a conventional high-resolution electron microscope (having a strong objective lens) equipped with suitable X-ray or electron spectrometers. Of the diffraction methods especially the technique of convergent beam diffraction is used, yielding valuable information on crystal structures, lattice parameter changes, symmetry variations and crystal perfection, respectively. For chemical analysis, either energy-dispersive X-ray spectroscopy (EDX) is used or electron energy loss spectroscopy (EELS). Finally, high-resolution electron microscopy in the lateral resolution range of some 0.1 nm allows the reliable geometrical inspection of extreme microregions.     

Characterization of Fe/Cr multilayers by analytical transmission electron microscopy

Different techniques of analytical TEM were used to investigate Fe/Cr multilayers. These multilayers show a dependence of their electrical resistance as a function of the magnetic field. This effect called giant magnetoresistance can be utilized for example in magnetic recording heads. Typical dimensions of the single layer thickness are in the nanometer region. Therefore the microstructure of this material has been investigated by transmission electron microscopy (TEM). To get additional analytical information energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS) can be used. Received: 15 July 1997 / Revised: 5 February 1998 / Accepted: 6 February 1998     

Design Features of a High Resolution Microcalorimeter EDX System

 High resolution, superconducting detectors allow energy dispersive X-ray spectrometry (EDX) with energy resolution and energy threshold far beyond the levels obtained with semiconductor detectors. These cryogenic detectors are run at temperatures of less than 100 mK and combine the excellent energy resolution of wavelength dispersive X-ray spectrometry (WDX) with the fast, energy dispersive analysis of EDX. CSP cryogenic spectrometer’s microcalorimeter type EDX cryodetectors are equipped with a mechanical cooling system that runs vibration free and allows completely automated operations on scanning electron microscopes (SEMs), field emission guns (FEGs) and transmission electron microscopes (TEMs). This detector type offers new opportunities in material analysis, especially when low excitation energies are applied or light elements are to be determined.     

Atomic scale characterization of vacancy ordering in oxygen conducting membranes.

This article presents a comprehensive investigation of (La, Sr)FeO3 by correlated atomic resolution annular dark field imaging and electron energy loss spectroscopy. Here, the ability of these techniques to characterize point defect formation and phase transitions under reducing conditions in situ in the scanning transmission electron microscope is evaluated and the influence of oxygen vacancies on the structure-property relationships is discussed. In particular, the evolution of the Ruddlesden-Popper, Brownmillerite, and Aurivillius phases can be associated directly with the ionic and electronic conductivity of the bulk material under different thermodynamic conditions. These results lead naturally to an atomistic defect chemistry model to explain the high temperature ionic and electronic conductivity in this and other perovskite materials.     

Structural and Chemical Analysis of Materials with High Spatial Resolution

 An understanding of the correlation between microstructures and properties of materials require the characterization of the material on many different length scales. Often the properties depend primarily on the atomistics of defects, such as dislocations and interfaces. The different techniques of transmission electron microscopy allow the characterization of the structure and of the chemical composition of materials with high spatial resolution to the atomic level: high resolution transmission electron microscopy allows the determination of the position of the columns of atoms (ions) with high accuracy. The accuracy which can be achieved in these measurements depends not only on the instrumentation but also on the quality of the transmitted specimen and on the scattering power of the atoms (ions) present in the analyzed column. The chemical composition can be revealed from investigations by analytical microscopy which includes energy dispersive X-ray spectroscopy, mainly quantitatively applied for heavy elements, and electron energy-loss spectroscopy. Furthermore, the energy-loss near-edge structure of EELS data results in information on the local band structure of unoccupied states of the excited atoms and, therefore, on bonding. A quantitative evaluation of convergent beam electron diffraction results in information on the electron charge density distribution of the bulk (defect-free) material. The different techniques are described and applied to different problems in materials science. It will be shown that nearly atomic resolution can be achieved in high resolution electron microscopy and in analytical electron microscopy. Recent developments in electron microscopy instrumentation will result in atomic resolution in the foreseeable future.     

The new X-ray mapping: X-ray spectrum imaging above 100 kHz output count rate with the silicon drift detector.

Electron-excited X-ray mapping is a key operational mode of the scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometry (EDS). The popularity of X-ray mapping persists despite the significant time penalty due to the relatively low output count rates, typically less than 25 kHz, that can be processed with the conventional EDS. The silicon drift detector (SDD) uses the same measurement physics, but modifications to the detector structure permit operation at a factor of 5-10 times higher than conventional EDS for the same resolution. Output count rates as high as 500 kHz can be achieved with 217 eV energy resolution (at MnKalpha). Such extraordinarily high count rates make possible X-ray mapping through the method of X-ray spectrum imaging, in which a complete spectrum is captured at each pixel of the scan. Useful compositional data can be captured in less than 200 s with a pixel density of 160 x 120. Applications to alloy and rock microstructures, ultrapure materials with rare inclusions, and aggregate particles with complex chemistry illustrate new approaches to characterization made practical by high-speed X-ray mapping with the SDD.Note: The Siegbahn notation for characteristic X-rays is commonly used in the field of electron beam X-ray spectrometry and will be used in this article. The equivalent IUPAC notation is indicated in parentheses at the first use.In this article, the following arbitrary definitions will be used when referring to concentration (C) ranges: major: C > 0.1 (10 wt%), minor: 0.01 相似文献   

EELS nanoanalysis for investigating both chemical composition and bonding of interlayers in composites

The paper is concerned with the application of analytical transmission electron microscopy (TEM) to characterize both chemical composition and bond state of the elements detected in interlayers in C- and SiC-fibre reinforced composites. The chemical bond state of nanometre-sized regions is characterized by means of electron energy loss spectroscopy (EELS), where respective information is gained by analysing energy loss near edge structures (ELNES). In this context results of Si-L₂₃ ELNES investigations are presented concerning the chemical bonding of silicon with carbon, nitrogen and oxygen. The specific bond state of silicon is revealed by recording series of EEL spectra at high energy resolution across the fibre/ matrix interlayers of interest. Moreover, the element distribution is imaged by energy-filtered TEM.Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Superhard coatings — Production and analysis

In the development of diamond and c-BN products the analytical methods for characterizing the surface, bulk and interface of the diamond coatings are very important. SEM, Raman, XRD and IR are the methods used for characterization and SIMS, TEM, AES, NRA, RBS, XPS, STM, etc. are used for the investigation of special problems. The techniques for diamond and c-BN production are briefly summarized to give an idea of the complex interactions between production, application and analytical characterization. The analytical methods for diamond characterization and many relevant results are summarized in this paper; some physical properties (e.g. thermal conductivity, transparency, etc.) and their interaction with applications are also discussed.Abbreviations AES Auger electron spectroscopy - AFM atomic force microscopy - c-BN cubic boron nitride - CL cathodoluminescence - CVD chemical vapour deposition - EELS electron energy loss spectroscopy - EPMA electron probe microanalysis - ERDA elastic recoil detection analysis - h-BN hexagonal boron nitride - HP-HT high-pressure high-temperature - HF hot-filament - IR infra-red - LEED low energy electron diffraction - MW microwave - NAA neutron activation analysis - NRA nuclear reaction analysis - PL photoluminescence - PVD physical vapour deposition - RBS Rutherford backscattering spectrometry - RHEED reeflected high energy electron diffraction - SAD selected area diffraction - SEM scanning electron microscopy - SIMS secondary ion mass spectrometry - STM secondary ion mass spectrometry - TEM transmission electron microscopy - TMB trimethylborate - XPS X-ray photoelectron spectroscopy - XRD X-ray diffraction Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Imaging methods for elemental, chemical, molecular, and morphological analyses of single cells

Combining elemental, chemical, molecular, and morphological imaging information from individual cells with a lateral resolution well below 1?×?1 μm² is the current technological challenge for investigating the smallest dimensions of living systems. In the race for such analytical performance, several techniques have been successfully developed; some use probes to determine given cellular contents whereas others use possible interactions between cellular matter with light or elements for characterization of contents. Morphological techniques providing information about cell dimensions have, when combined with other techniques, also opened the way to quantitative studies. New analytical opportunities are now being considered in cell biology, combining top-performance imaging techniques, applied to the same biosystem, with microscopy (nm–μm range) techniques providing elemental (micro-X-ray fluorescence, particle-induced X-ray emission, secondary-ion mass spectrometry), chemical (Raman, coherent anti-stokes Raman, Fourier-transform infrared, and near-field), molecular (UV–visible confocal and multiphoton), and morphological (AFM, ellipsometry, X-ray phase contrast, digital holography) information. Dedicated cell-culture methods have been proposed for multimodal imaging in vitro and/or ex vivo. This review shows that in addition to UV–fluorescent techniques, the imaging modalities able to provide interesting information about a cell, with high spatial and time resolution, have grown sufficiently to envisage quantitative analysis of chemical species inside subcellular compartments.