Size-dependent reactivity in hydrosilylation of silicon nanocrystals

We present an investigation into the influence of nanocrystal size on the reactivity of silicon nanocrystals (Si-NCs) in near-UV photochemical hydrosilylation. The size-dependent reactivity of Si-NCs with photoluminescence (PL) in the visible and near-infrared regions was evaluated using PL and Fourier-transform infrared (FTIR) spectroscopy, and small-angle X-ray scattering (SAXS). Under near-UV excitation, Si-NCs with PL in the visible spectral region react faster than Si-NCs with near-IR PL, allowing partial separation of a mixture of Si-NC sizes through hydrosilylation. This is attributed to quantum size effects in the exciton-mediated mechanisms proposed for this reaction.     

Highly luminescent silicon nanocrystals with discrete optical transitions.

A new synthetic method was developed to produce robust, highly crystalline, organic-monolayer passivated silicon (Si) nanocrystals in a supercritical fluid. By thermally degrading the Si precursor, diphenylsilane, in the presence of octanol at 500 degrees C and 345 bar, relatively size-monodisperse sterically stabilized Si nanocrystals ranging from 15 to 40 A in diameter could be obtained in significant quantities. Octanol binds to the Si nanocrystal surface through an alkoxide linkage and provides steric stabilization through the hydrocarbon chain. The absorbance and photoluminescence excitation (PLE) spectra of the nanocrystals exhibit a significant blue shift in optical properties from the bulk band gap energy of 1.2 eV due to quantum confinement effects. The stable Si clusters show efficient blue (15 A) or green (25-40 A) band-edge photoemission with luminescence quantum yields up to 23% at room temperature, and electronic structure characteristic of a predominantly indirect transition, despite the extremely small particle size. The smallest nanocrystals, 15 A in diameter, exhibit discrete optical transitions, characteristic of quantum confinement effects for crystalline nanocrystals with a narrow size distribution.     

Photoluminescence enhancement of PEG-modified YAG:Ce3+ nanocrystal phosphor prepared by glycothermal method

Y3Al5O12:Ce3+ (YAG:Ce3+) nanocrystals were synthesized in 1,4-butylene glycol (BG) with and without poly(ethylene glycol) (PEG) by the glycothermal method. The internal quantum efficiency of the photoluminescence (PL) corresponding to the 5d --> 4f transition of Ce3+ in the YAG:Ce3+ nanocrystal increased from 21.3 to 37.9% by addition of PEG, while no appreciable change in the primary particle size, the crystallite size, and the lattice distortion was recognized by transmission electron microscopy and X-ray diffractometry. The thermogravimetry-differential thermal analysis, Fourier transform infrared absorption spectroscopy and 1H --> 13C cross-polarization magic angle spinning nuclear magnetic resonance (CP-MAS NMR) confirmed the preferential coordination of PEG to the YAG:Ce3+ nanocrystal. 27Al single-pulse excitation MAS NMR reveals that the ratio of the 4-fold coordination site to the 6-fold coordination site increased from 0.53 to 0.72 by addition of PEG. We conclude that the surface modification of the YAG:Ce3+ nanocrystal by PEG induces the surface passivation, the prevention of the oxidation of Ce3+ to Ce4+, the promotion of the incorporation of Ce3+ into YAG and the local structural rearrangement, resulting in the PL enhancement.     

Size-dependent electrochemical behavior of thiol-capped CdTe nanocrystals in aqueous solution

Electrochemical studies of thiol-capped CdTe nanocrystals in aqueous solution have demonstrated several distinct oxidation and reduction peaks in the voltammograms, with the peak positions being dependent on the size of the nanocrystals. While the size dependence of the reduction and one of the oxidation potentials can be attributed to altering the energetic band positions owing to the quantum size effect, an extraordinary behavior was found for the oxidation peak observed at less positive potentials. In contrast to a prediction based on the quantum size effect, this peak moves to more negative potentials as the nanocrystals' size decreases. Moreover, the contribution of the charge associated with this peak compared to the total charge passed during the nanocrystal oxidation correlates well with the photoluminescence (PL) efficiency of individual fractions of the CdTe nanocrystals. These experimental observations allow a peak to be assigned to the oxidation of Te-related surface traps. The intra-band-gap energy level assigned to these Te-related trap states shifts toward the top of the valence band as the nanocrystal size increases, thus allowing the higher photostability of the larger nanocrystals to be explained. At a certain nanocrystal size, the trap level can even move out of the band gap.     

The kinetics of growth of semiconductor nanocrystals in a hot amphiphile matrix

The first comprehensive study on the kinetics of nanocrystal growth in a hot amphiphile medium is presented. An example is given with CdSe semiconductor nanocrystals grown after the injection of precursor (a mixture of Cd- and Se-reagents) in concentrated tri-octylphosphine oxide matrix (heated to more than 300 degrees C). The particle size distribution is reconstructed as a function of time from the absorption and photoluminescence spectra collected during the synthesis process. For this purpose a new expression is used relating the exciton energy due to quantum confinement with the nanocrystal radius. The growth kinetics is considered as a two-stage process in order to describe the time variation of nanoparticle size. During the first stage, called reaction-limited growth, the size of initial nucleus rapidly increases due to a sort of surface reaction exhausting the precursor in the nanoparticle vicinity. The growth in such conditions favors also a remarkable narrowing of the size distribution. The nanocrystal develops further on account of a slow precursor transfer from a distant space driven by the concentration gradient--classical diffusion-limited growth. The width of size distribution also increases proportional to the average particle size. Any growth will stop after the precursor concentration reaches a minimum value defining the limit for the final nanocrystal size in a batch. Solving the kinetic equations for the growth rate in each case of kinetics derives analytical expressions for the mean radius and variance of size distribution. Then the respective expressions are matched in a uniform solution valid during the entire synthesis. The theoretical model is in a good quantitative agreement with the experimental data for independent syntheses. Important characteristic scales of the processes (time-constant and length) and microscopic parameters of the reacting system (interfacial energy and reaction rate constant) are estimated from the data. It turns out that the fast reaction-limited growth is important to obtain well-defined nanocrystals of high optical quality by using less energy, time and consumable. However, to make them reproducibly uniform one should control also the ultra-fast nucleation process preceding the nanocrystal growth, which is still unknown. Nevertheless, our current findings allow the conceptual design of a new continuos-flow reactor for the manufacturing of a large amount of uniform nanocrystals.     

Effect of plasma etching on photoluminescence of SnO(x)/Sn nanoparticles deposited on DOPC lipid membrane

The photoluminescence characteristic of the SnO(x)/Sn nanoparticles deposited on a solid supported liquid-crystalline phospholipid (1,2-dioleoyl-sn-glycero-3-phosphocholine) membrane was probed after plasma etching the nanoparticle monolayer. It was shown that the plasma etching of the nanoparticle surface greatly altered the particle morphology and enhanced the PL effect, especially when the particle size was below 10 nm in spite of strong presence of surrounding carbon. The enhancement mainly stemmed from the growth of a new PL peak due to the additional defect states produced on the nanoparticle surface by the plasma etching. It was also shown that hydrating the SnO(x)/Sn nanoparticles similarly improved the PL response of the nanoparticles as the hydration produced an additional oxygen-rich oxide layer on the particle surface.     

Ensemble Effects in the Temperature-Dependent Photoluminescence of Silicon Nanocrystals

In this work the temperature-dependent photoluminescence of alkyl-capped silicon nanocrystals with mean diameters of between 3 and 9 nm has been investigated. The nanocrystals were characterized extensively by FTIR, TEM, powder XRD, and X-ray photoelectron spectroscopy prior to low-temperature and time-resolved photoluminescence spectroscopy experiments. The photoluminescence (PL) properties were evaluated in the temperature range of 41–300 K. We found that the well-known temperature-dependent blueshift of the PL maximum decreases with increasing nanocrystal diameter and eventually becomes a redshift for nanocrystal diameters larger than 6 nm. This implies that the observed shifts cannot be explained solely by band-gap widening, as is commonly assumed. We propose that the luminescence of drop-cast silicon nanocrystals is affected by particle ensemble effects, which can explain the otherwise surprising temperature dependence of the luminescence peak.     

Time-resolved photoluminescence spectra of Si species encapsulated in zeolite supercages

Photoluminescence (PL) spectra of Si species encapsulated in zeolite supercages are studied. It is reported that the chained Si species terminated partially with phenyl groups and with some unsaturated bonds are formed in zeolite supercages by the reaction with phenylsilane and they show PL around 4 eV (J. Phys. Chem. 2004, 108, 2501-2508). In the present paper they are reduced with hydrogen to prepare Si chained species terminated and saturated with hydrogen atoms. The PL spectra are deconvoluted to be four components at 1.9, 2.2, 2.6, and 3.7 eV, which can tentatively be assigned to Si nanocrystals and Si quantum wires in addition to defects in SiO2 and uncontrolled organic impurities in zeolite, respectively. At elevated temperatures the Si quantum wires in zeolite pores seem to change the Si nanocrystals with the size larger than that of the zeolite pore diameter. It is the first case in which the PL decay lifetime of oxygen vacancies in zeolite can be detected to be quite short to be about 16 ns. The detected lifetimes of Si quantum wires are significantly very short, about 12 ns. The Si species encapsulated zeolite is solvated with hydrofluoric acid solution to separate the Si quantum wires by dissolving zeolite lattice. The Si quantum wires in the HF solution show intense PL spectra peaked at 2.33 eV and broad UV spectra around 2.8-3.5 eV. They will have different shapes and lengths. The HF solvated zeolite shows still PL spectra characteristic of oxygen vacancies and the absorption edge at 3.6 eV. The result means that zeolite lattice is solvated in HF solution as clusters with a band gap of 3.6 eV and they can still have some oxygen vacancies. Oxygen vacancies situate about 1.0 eV below the zeolite conduction band minimum, and the absorbed energy can be dissipated as PL between the valence band maximum and the oxygen vacancies. It is concluded that the excitation photon energy can be absorbed in zeolite and the Si quantum wires and then the absorbed energies are competitively relaxed in zeolite and the Si quantum wires.     

Surface functionalization of silicon nanoparticles produced by laser-driven pyrolysis of silane followed by HF-HNO3 etching

CO2 laser induced pyrolysis of silane was used to produce silicon nanoparticles with an average diameter as small as 5 nm at high rates (up to 200 mg/h). Etching these particles with a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) reduces their size and passivates their surface such that they exhibit bright visible photoluminescence (PL). This paper describes the attachment of organic molecules to hydrogen-terminated and hydroxyl-terminated surfaces of these nanoparticles. Stable particle dispersions in various solvents were obtained by treatment of hydrogen-terminated surfaces with octadecene or undecylenic acid and by treatment of hydroxyl-terminated surfaces with octadecyltrimethoxysilane. Transmission electron microscopy showed that the surface-functionalized particles were well dispersed and crystalline. FTIR spectroscopy confirmed the expected reactions of the organic molecules with the particle surfaces. Photoluminescence measurements showed that surface treatment significantly stabilized the PL properties of the nanoparticles against degradation. Size selective precipitation was applied to particle dispersions and allowed some narrowing and tuning of the PL spectrum.     

A new two-phase route to high-quality CdS nanocrystals

A new two-phase route has been developed to synthesize high-quality CdS nanocrystals with a narrow size distribution and a high photoluminescence (PL) quantum yield (QY). In the two-phase system, toluene and water were used as separate solvents for cadmium myristate (CdM2) and thiourea, which served as cadmium source and sulfur source, respectively, and oleic acid (OA) was used as a ligand for stabilizing the nanocrystals. The reactions were completed in the heated autoclaves. The initial Cd/S molar ratio of the precursors and the reaction temperature were found to be factors that affected the growth of nanocrystals. Furthermore, a seeding-growth technique was developed to synthesize CdS nanocrystals of different sizes, which exhibit PL peaks with quite similar full width at half-maximum (FWHM) values compared to those of the initial nanocrystal seeds in all cases.     

Spectroscopic properties of colloidal indium phosphide quantum wires

Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photooxidation, without a significant influence on quantum-wire photoluminescence. However, photooxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation and that colloidal quantum wires have intrinsically low photoluminescence efficiencies.     

Amine-assisted facetted etching of CdSe nanocrystals

The treatment of CdSe nanocrystals (NCs) in a 3-amino-1-propanol (APOL)/water (v/v = 10:1) mixture at 80 degrees C in the presence of O(2) causes them to undergo a slow chemical etching process, as evidenced by spectroscopic and structural investigations. Instead of the continuous blue shift expected from a gradual decrease in NC dimensions, a bottleneck behavior was observed with distinct plateaus in the peak position of photoluminescence (PL) and corresponding maxima in PL quantum yield (i.e., 34 +/-7%). It is presently argued that such etching behavior is a result of two competitive processes taking place on the surface of these CdSe NCs: (i) oxidation of the exposed Se-sites to acidic SeO(x)() entities, which are readily solubilized in the basic APOL/H(2)O mixture, and (ii) coordination of the underlying Cd-sites with both amines and hydroxyl moieties to temporally impede NC dissolution. This is consistent with the HRTEM results, which suggest that the etched NCs adopt pyramidal morphologies with Cd-terminated facets (i.e., (0001) bases and either {011} or {21} sides) and account for the apparent resistance to etching at the plateau regions.     

Large-scale synthesis of nearly monodisperse CdSe/CdS core/shell nanocrystals using air-stable reagents via successive ion layer adsorption and reaction

Successive ion layer adsorption and reaction (SILAR) originally developed for the deposition of thin films on solid substrates from solution baths is introduced as a technique for the growth of high-quality core/shell nanocrystals of compound semiconductors. The growth of the shell was designed to grow one monolayer at a time by alternating injections of air-stable and inexpensive cationic and anionic precursors into the reaction mixture with core nanocrystals. The principles of SILAR were demonstrated by the CdSe/CdS core/shell model system using its shell-thickness-dependent optical spectra as the probes with CdO and elemental S as the precursors. For this reaction system, a relatively high temperature, about 220-240 degrees C, was found to be essential for SILAR to fully occur. The synthesis can be readily performed on a multigram scale. The size distribution of the core/shell nanocrystals was maintained even after five monolayers of CdS shell (equivalent to about 10 times volume increase for a 3.5 nm CdSe nanocrystal) were grown onto the core nanocrystals. The epitaxial growth of the core/shell structures was verified by optical spectroscopy, TEM, XRD, and XPS. The photoluminescence quantum yield (PL QY) of the as-prepared CdSe/CdS core/shell nanocrystals ranged from 20% to 40%, and the PL full-width at half-maximum (fwhm) was maintained between 23 and 26 nm, even for those nanocrystals for which the UV-vis and PL peaks red-shifted by about 50 nm from that of the core nanocrystals. Several types of brightening phenomena were observed, some of which can further boost the PL QY of the core/shell nanocrystals. The CdSe/CdS core/shell nanocrystals were found to be superior in comparison to the highly luminescent CdSe plain core nanocrystals. The SILAR technique reported here can also be used for the growth of complex colloidal semiconductor nanostructures, such as quantum shells and colloidal quantum wells.     

Investigation of the crystallization process in 2 nm CdSe quantum dots

Investigation of the growth of CdSe nanocrystals ( approximately 160 atoms) to the uniquely stable size of 2 nm allows the monitoring of the crystallization process in semiconductor quantum dots. By using a combination of optical techniques, high-resolution transmission electron microscopy (HRTEM), and powder X-ray diffractometry (XRD), new phenomena were explored during the CdSe nanocrystal growth process, which involved significant morphological reconstruction and crystallization of the initially formed amorphous nanoparticles. During the crystallization, the absorption onset of the CdSe quantum dots blue shifted toward higher energies at 3 eV (414 nm), while the photoluminescence red shifted to lower energies. Furthermore, an apparent increasing Stokes shift was observed during the formation of small CdSe nanoparticles. On the other hand, the photoluminescence excitation spectra showed constant features over the reaction time. Additionally, results from HRTEM and XRD studies show that the CdSe nanoparticles were amorphous at early reaction stages and became better crystallized after longer reaction times, while the particle size remained the same during the crystallization process. These observations demonstrate the important role of the surface on the optical properties of small CdSe quantum dots and facilitated the spectroscopic monitoring of the crystallization process in quantum dots.     

Poly(allylamine)-encapsulated water-soluble CdSe nanocrystals

Water-soluble CdSe nanocrystal/poly(allylamine) clusters with sizes ranging between 50 and 200 nm were prepared using 3-amino-1-propanol as a compatibilizing agent. Photoluminescence (PL) quantum yields (QY) up to 20% were achieved in water without the need to clad these CdSe nanocrystals (NCs) with higher band gap inorganic layers. The polymer-to-nanocrystal ratio plays an important role in the internal structure and stability of these polymer/NC clusters, as determined by static and dynamic light scattering in conjunction with PL studies. These results were modeled by using an effective-mass approximation and perturbation theory on the change in dielectric constant of the immediate NC environment. The time evolution of the average cluster radius of gyration and hydrodynamic radius revealed that a higher polymer-to-NC ratio leads to increased PL stability and QY. This is a result of a denser cluster configuration, which affords improved NC passivation. Increasing the ionic strength results in greater nanocluster compaction and higher PL QYs. Decreasing the pH value below 12 resulted in dramatic reduction in PL brightness, despite cluster densification, due to partial ionization and dissolution of the amine-based NC surface-capping agents.     

Three-dimensional etching profiles and surface speciations (via attenuated total reflection-fourier transform infrared spectroscopy) of silicon nanowires in NH4F-buffered HF solutions: a double passivation model

A systematic study of the etching behavior, in terms of three-dimensional profiles, of one-dimensional (1-D) silicon nanowires (SiNWs) in NH(4)F-buffered hydrofluoric acid (BHF) solutions of varying concentrations and pH values and the surface speciations of the resulting etched SiNW surfaces, as characterized by attenuated total reflection-Fourier transform infrared (ATR-FTIR) spectroscopy, is reported. It was found that SiNWs are stable only in relatively narrow pH ranges of the BHF solutions. The results are rationalized in terms of a "double passivation" model. When SiNWs are etched in BHF solutions with pH values of 1-3, the surfaces are passivated with hydrogen (inner layer) giving rise to surface moieties such as Si-H(x) species (x = 1-3); at high HF concentrations, the H-terminated Si surfaces are covered with a hydrogen bonding network of HF and related molecules (oligomers, etc.), providing an outer-layer passivation. When SiNWs are etched in BHF solutions with pH values of 11-14 (by adding a strong base such as NaOH), the surfaces are oxygen-terminated with surface moieties such as Si-(O(-))(x)() species (x = 1-3); at high NH(4)F concentrations, the negatively charged Si surfaces are stabilized by NH(4)(+) ions via ionic bonding, again providing outer-layer passivation. In BHF solutions with pH values of 3-11, the surface speciation, consisting of Si-(OH)(x)(O(-))(y) (x + y = 1-3) species, is unstable and etched away rapidly. The surface speciations of SiNWs etched in various BHF solutions were explored via ATR-FTIR spectroscopy. It was found that, while etching SiNWs with HF-rich BHF solutions with pH < 4 gave rise to Si-H(x)() surface species, no surface Si-H(x) species were observed with SiNWs etched in BHF solutions with pH >/= 4 (HF/NH(4)F /= 4 on the other. These two factors, among others, contribute to the rapid hydrolysis of the surface Si-H(x)() species (and the etching of the SiNWs), particularly in BHF solutions with low HF/NH(4)F ratios and high pH values (pH >/= 4).     

单分散CdS纳米晶/PNIPAM复合水凝胶的制备及其温敏荧光特性

采用液体-固体-溶液法(LSS)制备单分散CdS纳米晶;通过自由基聚合制备单分散CdS纳米晶/聚N-异丙基丙烯酰胺(CdS/PNIPAM)复合温敏水凝胶.采用HRTEM、XRD、FTIR、DSC、PL等对CdS纳米晶、CdS/PNIPAM温敏复合凝胶的微观结构与性能进行了表征,变温荧光光谱研究了温度对凝胶荧光性能的影响.结果表明,CdS纳米晶粒径约为2.8 nm,单分散性良好;复合凝胶的荧光发射强度与环境温度存在一定的关联性,且呈可逆性.     

Increase of the photoluminescence intensity of InP nanowires by photoassisted surface passivation

As-grown single-crystal InP nanowires, covered with a surface oxide, show a photoluminescence efficiency that strongly varies from wire to wire. We show that the luminescence efficiency of single-crystal InP nanowires can be improved by photoassisted wet chemical etching in a butanol solution containing HF and the indium-coordinating ligand trioctylphosphine oxide. Electron-hole photogeneration, electron scavenging, and oxidative dissolution combined with surface passivation by the indium-coordinating ligand are essential elements to improve the luminescence efficiency. Time traces of the luminescence of surface-passivated wires show strong oscillations resembling the on-off blinking observed with single quantum dots. These results reflect the strong influence of a single or a few nonradiative recombination center(s) on the luminescence properties of an entire wire.     

High-efficiency carrier multiplication and ultrafast charge separation in semiconductor nanocrystals studied via time-resolved photoluminescence

We demonstrate novel methods for the study of multiple exciton generation from a single photon absorption event (carrier multiplication) in semiconductor nanocrystals (or nanocrystal quantum dots) that are complementary to our previously reported transient absorption method. By monitoring the time dependence of photoluminescence (PL) from CdSe nanocrystals via time-correlated single photon counting, we find that carrier multiplication is observable due to the Auger decay of biexcitons. We compare these data with similar studies using transient absorption and find that the two methods give comparable results. In addition to the observation of dynamical signatures of carrier multiplication due to the Auger decay, we observe spectral signatures of multiple excitons produced from the absorption of a single photon. PL spectra at short times following excitation with high-energy photons are red-shifted compared to the single-exciton emission band, which is consistent with previous observations of significant exciton-exciton interactions in nanocrystals. We then show using a combination of transient absorption and time-resolved PL studies that charge transfer between a nanocrystal and a Ru-based catalyst model compound takes place on a time scale that is faster than Auger recombination time constants, which points toward a possible design of donor-acceptor assemblies that can be utilized to take advantage of the carrier multiplication process.