Fabrication and electrical characterization of transparent NiO/ZnO p–n junction by the sol–gel spin coating method

Sol–gel spin technique was used to fabricate transparent p–n junction between NiO and ZnO semiconductors. Atomic force microscopy studies indicated that ZnO film had a fibrous structure, while NiO film showed very smooth surface morphology. The optical transmittance of these films was about 75 %. The optical band gaps of ZnO and NiO films were obtained to be 3.25 and 3.89 eV, respectively. The current–voltage characteristics of NiO/ZnO junction showed a good rectifying behavior. The junction parameters such as ideality factor and barrier height were calculated using thermionic emission model. The barrier height and ideality factor values of the diode were obtained to be 0.48 and 2.91 eV, respectively. The variation of photocurrent with wavelength indicates that this device had high efficiency in wavelength range of 450–475 nm.     

Enhancement of optical conductivity in the ultra-violet region of Cs doped ZnO sol gel thin films

Nano crystalline cesium (Cs) doped ZnO thin films were deposited on glass substrate by sol gel spin coating method with 1–3 mol.% doping concentration and different annealing temperatures. The deposited films were characterized by X-ray diffraction (XRD), Hall Effect, Photoluminescence (PL) and UV–Visible studies. XRD measurements reveal that all the samples abound in the wurtzite structure with polycrystalline nature. An increase in crystalline size from 19.60 to 44.54 nm is observed with the increase of doping concentration. Electrical conductivity of Cs doped ZnO films were observed from Hall effect measurements and the maximum carrier concentration obtained is 7.35 × 10¹⁸ cm^?3. The near band emission (384 nm) peak intensity increases with the increase of Cs doping concentration and a maximum intensity 55,280 was observed for CZ3 film from PL spectrum. Also a low energy near infrared (NIR) emission peak centered at 1.62 eV appears for the Cs doped ZnO films. The average transmission of CZ film is 88 % and the absorption edge is red shifted with the increase of Cs doping concentration and also the optical conductivity increases in the UV region.     

Improved optical and electrical properties of sol–gel-derived boron-doped zinc oxide thin films

Sol–gel spin-coating was used to grow zinc oxide (ZnO) thin films doped with 0–2.5 at.% B on quartz substrates. The structural, optical, and electrical properties of the thin films were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet–visible spectroscopy, and van der Pauw Hall-effect measurements. All the thin films had deposited well onto the quartz substrates and exhibited granular morphology. The average crystallite size, lattice constants, residual stress, and lengths of the bonds in the crystal lattice of the thin films were calculated from the XRD data. The PL spectra showed near-band-edge (NBE) and deep-level emissions, and B doping varied the PL properties and increased the efficiency of the NBE emission. The optical transmittance spectra for the undoped ZnO and boron-doped zinc oxide (BZO) thin films show that the optical transmittance of the BZO thin films was significantly higher than that of the undoped ZnO thin films in the visible region of the spectra and that the absorption edge of the BZO thin films was blue-shifted. In addition, doping the ZnO thin films with B significantly varied the absorption coefficient, optical band gap, Urbach energy, refractive index, extinction coefficient, single-oscillator energy, dispersion energy, average oscillator strength, average oscillator wavelength, dielectric constant, and optical conductivity of the BZO thin films. The Hall-effect data suggested that B doping also improved the electrical properties such as the carrier concentration, mobility, and resistivity of the thin films.     

Preparation and optical–electrical properties of Al-doped ZnO films

Among the various semiconducting metal oxide materials, ZnO thin films are highly attractive in the development of materials area. In this paper, Al-doped ZnO thin films were prepared by sol–gel dipping and drawing technology and their composition, structure and optical–electrical properties were investigated. XRD results shows that the Al-doped ZnO thin film is of polycrystalline hexagonal wurtzite structure, and the (002) face of the thin film has the strongest orientation at the annealing temperature of 550 °C. The surface resistance of Al-doped ZnO thin film firstly drops and then increases with the increase in annealing temperature. Al doping concentration is also an important factor for improving the conductivity of modified ZnO thin films, and the surface resistance has the tendency to drop at first and then to increase when the Al concentration is increasing. The surface resistance of modified ZnO thin films drops to the lowest point of 139 KΩ sq^?1 when the Al concentration is 1.6 at% and the annealing temperature is 500 °C. The light transmission measurements show that the doping concentration has little influence on light transmittance. The transmittance at the visible region of films is all over 80 %, and the highest value is up to 91 %.     

Structural and optical characterization of sol–gel derived boron doped Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanostructured films

Pure and boron (B) doped iron oxide (Fe₂O₃) nanostructured thin films were prepared by sol–gel spin coating method. The effects of B (0.1, 0.2, 0.5 and 1 %) content on the crystallinity and morphological properties of Fe₂O₃ films were investigated by X-ray diffractometer and atomic force microscopy. X-ray diffraction patterns revealed that the Fe₂O₃ films have a rhombohedral crystalline phase of α-Fe₂O₃ phase (hematite) with nanostructure and their crystallite size (D) is changed from 27 ± 2 to 45 ± 5 nm with B dopant content. The minimum crystallite size value of 27 ± 2 nm was obtained for 0.2 % B doped Fe₂O₃ film. Carrying out UV–VIS absorption study for both doped and undoped films at room temperature, it was realized that allowed optical transitions may be direct or indirect transitions. The direct and indirect energy gap values for pure Fe₂O₃ were obtained to be 2.07 and 1.95 eV, respectively. The optical band gap value of the films was changed with 0.1 % B doping to reach 1.86 eV for direct band gap and 1.66 eV in case of indirect band gap.     

Structural,optical and photoelectron spectroscopic studies of nano/micro ZnO:Cd rods synthesized via sol-gel route

Thin films of cadmium doped zinc oxide rod like microstructure have been synthesized by a very simple sol-gel dip coating technique. Sols were prepared from hydrated zinc oxide precursor and 2-methoxyethanol solvent with monoethanolamine as a sol stabilizer. XRD pattern confirmed the hexagonal wurtzite structure of the deposited ZnO films. Surface morphologies of the films have been studied by a scanning electron microscope and an atomic force microscope, which confirmed that the films are composed of densely packed randomly oriented nano/submicron rods with diameter in the range 300–400 nm having various lengths. We proposed a possible growth mechanism for this rodlike structure. X-ray photoelectron spectroscopic study was used to determine the binding energies and the Zn 2p3/2, Cd 3d5 and O 1s peaks in the XPS spectra were located at 1021.08 eV, 404.6 eV and 529.8 eV respectively, which confirmed the Cd doping in ZnO. Cadmium content in the film was estimated both from energy dispersive X-ray analysis and XPS measurement. Band gap energy determined from optical transmittance spectra systematically varied from 3.28 eV to 3.15 eV for 0% to 5.6% of Cd doping. Urbach parameter determined from the band tail of the transmittance spectra showed that it increased with doping percentage and this parameter for a fixed cadmium doping level decreased with increase of temperature.     

Structural,morphological, optical and third order nonlinear optical response of spin-coated NiO thin films: An effect of N doping

The present work deals with the deposition of NiO and Nitrogen (N)-doped NiO thin films by sol-gel spin coating technique. Structural, morphological, linear and non-linear optical characteristics of undoped and N-doped (1–15 wt%) NiO films were studied. From XRD measurements, it is evident that single phase nano crystalline NiO is formed for all doping concentrations. Surface morphology study shows that higher concentration of N doped NiO thin films were of high quality and EDX mapping confirmed the doping of Nitrogen in films. The Raman spectra of the studied films were analyzed over the range of 1400-200 cm⁻¹. The optical studies confirm that as doping increases, transparency of the film decreases (except at 10% N doping) and the band gap narrows. Nonlinear parameters such as refractive index and susceptibilities also depend on N dopant concentration. Z-scan studies viz., absorption index, nonlinear refractive index were carried out on undoped and N doped NiO samples and the results were matched with theoretical calculated values.     

SnO2 thin films doped indium prepared by the sol–gel method: structure, electrical and photoluminescence properties

This paper reports on the preparation, characterization, electrical and optical properties of tin oxide (SnO₂) thin films doped indium prepared by the sol–gel method and deposited on glass substrates with dip coating technique. X-ray diffraction patterns showed an increase in the crystallinity of the films with increase in annealing temperatures. Atomic force microscopy analyses revealed an increase of grain growth with raise in annealing temperature. The film surface revealed positive skewness and kurtosis values less than 3 which make them favorable for OLEDs applications. The lowest resistivity (about 10^?7) was obtained for the ITO films annealed at 500 °C. These films acquire n-type conductivity due to the non-stoichiometric in the films like (interstitial tin atoms) and also due to low indium doping concentration. The optical properties of the films have been studied from transmission spectra. An average transmittance of >80 % in ultraviolet–visible region was observed for all the films. Optical band gap energy (E _gap) of ITO films was found to vary in the range of 3.69–3.81 eV with the increase in annealing temperature. This slight shift of E _gap to higher photon energies could be related to the crystalline nature of the films associated with the decrease in the defect concentration caused by annealing. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in annealing temperature. The high temperature annealing would be expected to decrease the density of defects, improve the crystal orientation and reduce the traps for non-radiative transition and also increase the oxidation processes.     

Synthesis and characterization of tellurium-doped CdO nanoparticles thin films by sol–gel method

In this work, tellurium (Te) doped CdO nanoparticles thin films with different Te concentrations (1, 3, 5, 7 and 10 %) were prepared by sol–gel method. The effects of Te doping on the structural, morphological and optical properties of the CdO thin films were systematically studied. From X-ray diffraction spectra, it has seen that all of thin films were formed polycrystalline and cubic structure having (111), (200) and (311) orientations. The structure of CdO thin films with Te-dopant was formed the unstable CdTeO₃ monoclinic structure crystal plane ( $ {\bar{\text{1}}\text{22}} $ 1 ¯ 22 ), however, the intensity of this unstable peak of the crystalline phase decreased with the increase of Te-doping ratio. The strain in the structure is also studied by using Williamson-Hall method. From FE-SEM images, it has seen that particles have homogeneously distributed and well hold onto the substrate surface. Additionally, grain size increases from 27 to 121 nm with the increase of Te-doping ratio. Optical results indicate that 1 % Te-doped CdO thin film has the maximum transmittance of about 87 %, and the values of optical energy band gap increases from 2.50 to 2.64 eV with the increase of Te-doping ratio. These results make Te-doped CdO thin films an attractive candidate for thin film material applications.     

Preparation and characterization of nanorods Sb doped CdO films by sol–gel technique

Pure and antimony (Sb) doped CdO films were grown using sol–gel spin coating technique. The structural properties of the films were investigated using atomic force microscopy. The structure of CdO film is converted from microrods to nanorods with Sb dopant. The analysis of optical absorption revealed that optical bandgap of the films changes with doping. The optical bandgap for 0.1, 0.5, 1.0, and 2.0% Sb doped CdO was determined to be 2.28, 2.30, 2.56, and 2.42 eV, respectively. Other optical constants such as refractive index, extinction coefficient, and dielectric constants were calculated using the optical data. The refractive index dispersion of the films obeys the single oscillator model. The volume and surface energy loss functions were calculated and observed to increase with increase in the photon energy.     

Improvement of the electro-optical properties of nematic liquid crystals doped with strontium titanate nanoparticles at various doping concentrations

ABSTRACT

In this study, we doped homogenous aligned nematic liquid crystal (NLC) systems with strontium titanate (SrTiO₃) nanoparticles (NPs), and investigated the impact of doping concentration on the NLC’s electro-optical (EO) properties. SrTiO₃ NP-doped NLC cells maintained a high optical transmittance of 77.51% to 78.41% compared to pure NLC cells (78.09%). At a 0.1 wt.% SrTiO₃ NP doping concentration, twisted-nematic (TN)-LC cells exhibited enhanced EO performance, with a reduced threshold voltage from 1.70V to 1.61V and a shorter response time from 17.03 ms to 10.66 ms without optical defects and degradations. We also observed an improvement in thermal endurance for doping concentrations of 0.05 and 0.1 wt.%.     

Optical,electrical, and electrochemical behavior of p-type nanostructured SnO<Subscript>2</Subscript>:Ni (NTO) thin films

The physical and electrochemical properties of sol-gel synthesized nickel-doped tin oxide (NTO) thin films were investigated. The X-ray diffraction results showed that NTO samples exhibited a tetragonal structure. The average crystallite size and the unit cell volume of the films were reduced by Ni increment, while the stacking fault probability was increased. Furthermore, the field-emission scanning electron microscopy images clearly displayed that the worm-like surface morphology of the SnO₂ thin films was altered to the spherical feature in 3 and 10 mol% NTO samples. Moreover, by virtue of Ni incorporation, the average transparency of the SnO₂ thin films rose up from 67 to 85% in the visible region; also, the optical band gap of the SnO₂ sample (3.97 eV) increased and the thin film with 3 mol% dopant concentration showed a maximum value of 4.22 eV. The blue/green emission intensities of photoluminescence spectra of SnO₂ thin film changed via Ni doping. The Hall effect measurements revealed that by Ni addition, the electrical conductivity of tin oxide thin films altered from n- to p-type and the carrier concentration of the films decreased due to the role of Ni²⁺ ions which act as electron acceptors in NTO films. In contrast, 20 mol% Ni-doped sample had the highest mobility about 9.65 cm² (V s)^?1. In addition, the cyclic voltammogram of NTO thin films in KOH electrolyte indicated the charge storage capacity and the surface total charge density of SnO₂ thin films enhanced via Ni doping. Moreover, the diffusion constant of the samples increased from 2?×?10^?15 to 6.5?×?10^?15 cm² s^?1 for undoped and 5 mol% dopant concentration. The electrochemical impedance spectroscopy of the NTO thin films in two different potentials showed the different electrochemical behaviors of n- and p-type thin films. It revealed that the 20 mol% NTO thin film had maximum charge transfer at lower applied potential.     

Structural,electrical and optical properties of tin doped cadmium oxide thin films obtained by sol–gel

Transparent and conducting tin doped cadmium oxide thin films were obtained by mixing cadmium oxide and tin oxide precursor solutions by the sol–gel method. Different tin contents in solution were studied: 0, 0.5, 1, 2, 3, 5 and 10 at.%. The films were sintered at 550 °C and, after that, annealed in N₂/H₂ gas mixture, in order to decrease their resistivity. X-ray diffraction patterns showed that doping of tin diminishes the [111] light preferred orientation of films and provokes a decrease of the average crystallite size from 30 to 12 nm. Atomic force microscopy images revealed morphological changes with the addition of tin content. All the films showed a high transmission around 75 % in the 600 < λ < 1,700 nm range and a shift of the absorption edge towards the blue region as the tin concentration was increased. The cadmium oxide films doped with 1 at.% of tin showed the lowest resistivity of 5.7 × 10^?4 Ω cm and a band gap energy value of 2.7 eV. For their characteristics, these CdO:Sn films are good candidates as transparent conductive electrodes in CdS/CdTe and CdS/CIGS type solar cells.     

Optical,electrical, and thermal insulation properties of antimony-doped tin oxide nanoparticles prepared by frozen gel method

Antimony doped tin dioxide (ATO) nanoparticles with different Sb doping contents were prepared by freeze-drying the precursor gel and then calcined procedure. The obtained ATO nanoparticles were characterized by X-ray diffraction, scanning electron microscope, optical and electrical techniques. Results indicated that ATO with 10 mol% Sb doping is optimal, with which had the lowest resistivity and highest transmittance in visible region as well as narrow particle size distribution. Thermal insulation properties of ATO/waterborne polyurethane (WPU) films coating on the glass substrates with different thickness were studied on a DIY heat insulating measurement box and showed that the glass coated with ATO/WPU films possessed better heat-insulating effect than empty glass .     

Wide Band Gap Transparent Polymer-Inorganic Composite Thin Films by Dip-Coating Method: Preparation and Characterizations

Wide band gap transparent polymer-inorganic (PVA-ZnO) composite thin films were prepared by the dip-coating method. Functional groups and metal oxide vibrations were found from Fourier transform-infrared spectroscopy. The elements Zn and O were confirmed from energy dispersive X-ray spectroscopy. The X-ray diffraction patterns revealed that the sharp diffraction peaks correspond to the hexagonal wurtzite structure of ZnO in the PVA matrix. Scanning electron microscopy images showed that the ZnO nanoparticles are randomly distributed throughout the entire film surface. The optical study reveals that the transmittance was more than 85% with very low absorption and wide band gap energy (4.03 to 3.95 eV). The obtained results indicate that the high transmittance, very low absorption, and wide band gap energy of the prepared dip-coated composite thin films make them suitable for use in transparent optoelectronic device applications in the near future.     

Synthesis and properties of Mo and W ions co-doped porous nano-structured VO2 films by sol–gel process

Porous nano-structured vanadium dioxide (VO₂) films doped with Mo and W ions had been synthesized by sol gel process by employing a sol containing ammonium molybdate and ammonium tungstate with the addition of cetyltrimethyl ammonium bromide (CTAB). The effects of molybdenum and tungsten co-doping and CTAB addition on the structure, morphologies, crystalline and optical properties of VO₂ films were investigated systematically in this study. The composition and microstructure were detected by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The Mo and W ions co-doped porous nano-structured VO₂ films showed excellent infrared transmittance (nearly 70 %), large transmittance difference (55 %) before and after the phase transition, low transition temperature (35 °C), wide hysteresis width (22 °C) and fast phase transition. The results suggest that such Mo and W ions co-doped porous nano-structured VO₂ film is an ideal fundamental material for optical data storage.     

Effect of Doped Boron on the Properties of ZnO Thin Films Prepared by Sol-gel Spin Coating

Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of （002）. The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 cV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%（molar fraction）. Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%（molar fraction）.     

Nanocrystalline Zn1−x−yBexMgyO thin films synthesized by the sol–gel method: structural and near infrared photoluminescence properties

In this paper, we reports on the structural and optical properties of Zn_1?x?yBe_xMg_yO thin films prepared by sol–gel method, which are new materials for optoelectronic and ultraviolet-light-emitting devices. The crystal structure and core level spectra of these films are studied by X-ray diffraction and X-ray photoelectron spectroscopy. Surface morphology of the films is analyzed by scanning electron microscope images and the surface is composed of spherical shaped grains. Micro-photoluminescence shows a near edge band emission and the peak values tuned from 3.26 eV for the undoped to 3.4 eV for the doped ZnO film. Near infrared emission is observed in the region 1.64–1.67 eV for pure and co-doped ZnO films. In micro-Raman spectra, multiple-order Raman bands originating from ZnO-like longitudinal optical (LO) phonons are observed. A Raman shift of about 5–18 cm^?1 is observed for the first-order LO phonon. A comparative study was made on Raman band for BeZnO, MgZnO and BeMgZnO nanocrystals with the LO phonon band of bulk ZnO. The ultraviolet resonant Raman excitation at room temperature shows multi-phonon LO modes up to the fourth order. Deformation energy of all the films is calculated and BeMgZnO film has the minimum deformation energy.     

A wet chemical preparation of transparent conducting thin films of Ga-doped ZnO nanoparticles

Crystalline gallium doped zinc oxide (GZO) nanopowders were synthesized using hydrothermal treatment processing. The doping concentration affected the phase structure as well as the shape of the nanopowder from nano rod-like structure to nanoparticulate one. The specific BET surface area increases with increasing the gallium doping concentration. Transparent conducting films were deposited on borosilicate glass substrate by spin coating using sols containing GZO nanoparticles dispersed in 1-propanol. The films are crystalline with a hexagonal structure. The effect of Ga doping concentration, sintering temperature and thickness of the layers has been investigated. The lowest resistivity achieved was 6.4 × 10^?2 Ω cm for a thickness of 150 nm. The films present a transmittance in the visible range as high as 90 %.     

Synthesis and characterization of highly preferred orientation polycrystalline Co-doped ZnO thin films prepared by improved sol–gel method

Highly preferred orientation polycrystalline Zn_1?xCo_xO (x = 0, 0.03, 0.06, 0.09) thin films were prepared by improved sol–gel method on quartz glass substrates. The structural, optical and magnetic properties were investigated. The X-ray diffraction patterns show that all the samples have the same structure with one highly oriented c-axis (002) peak. None of the samples showed any signal of impurity phases. The c-axis lattice constant increased linearly with the increase in Co doping content, indicating that the doping of Co ions into the host lattice did not change the wurtzite structure of ZnO. UV–Vis transmittance spectroscopy showed that the average optical transmittance of the films is about 90 % in visible wavelength range. The optical band gap (Eg) decreased with increasing Co content. Also, the results of vibration sample magnetization ascertained the ferromagnetic behavior of Co-doped ZnO, having a Curie temperature higher than room temperature.