Influence of rare earth Ce on structural, electrical and magnetic properties of Sr based W-type hexagonal ferrites

A series of single phase W-type Sr_3−xCe_xFe₁₆O₂₇ (x=0, 0.02, 0.04, 0.06, 0.08, 0.10) hexagonal ferrites prepared by the Sol-Gel method was sintered at 1050 °C for 5 h. The X-ray diffraction analysis reveals that all the samples belong to the family of W-type hexagonal ferrites. The c/a ratio falls in the range of W-type hexagonal ferrites. The grain size was measured by SEM varies from 0.7684 to 0.4366 μm which shows that the Ce³⁺ substituted samples have smaller grain size than pure ferrite Sr₃Fe₁₆O₂₇ which results from the difference in ionic radii of Ce³⁺ (1.034 Å) and Sr²⁺ (1.12 Å). The room temperature resistivity of the present samples varies from 6.5×10⁸ to 272×10⁸ Ω-cm. The coercivity increases from 1370 to 1993 Oe which is consistent with the decrease in grain size. The coercivity values indicate that the present samples fall in the range of hard ferrites. The large value of H_c may be due to domain wall pinning at the grain boundaries.     

Effects of crystalline grain size and packing ratio of self-forming core/shell nanoparticles on magnetic properties at up to GHz bands

Self-forming core/shell nanoparticles of magnetic metal/oxide with crystalline grain size of less than 40 nm were synthesized. The nanoparticles were highly concentrated in an insulating matrix to fabricate a nanocomposite, whose magnetic properties were investigated. The crystalline grain size of the nanoparticles strongly influenced the magnetic anisotropy field, magnetic coercivity, relative permeability, and loss factor (tan δ=μ″/μ′) at high frequency. The packing ratio of the magnetic metallic phase in the nanocomposite also influenced those properties. High permeability with low tan δ of less than 1.5% at up to 1 GHz was obtained in the case of the nanoparticles with crystalline grain size of around 15 nm with large packing ratio of the nanoparticles.     

Magnetic properties of Nd–Fe–B film magnets prepared by RF sputtering

Highly oriented films of ∼6 μm in thickness consisting of the Nd₂Fe₁₄B compound phase were obtained by a three-dimensional sputtering method at room temperature and the subsequent crystallization by annealing. The c-axis orientation and coercivity of film samples were sensitive to the sputtering parameters and annealing conditions. The optimum temperature and time for annealing were 650 °C and 30 min to show the highest coercivity without any deterioration for the orientation of Nd₂Fe₁₄B grains, and furthermore the degree of c-axis orientation was increased by decreasing the Ar gas pressure or input power for sputtering. The resultant film magnets with good magnetic properties of B_r=∼1.06 T, H_C=∼371 kA/m, and (BH)_max=∼160 kJ/m³ were obtained under the optimized parameters for sputtering.     

Magnetic characteristics of HPT deformed soft-magnetic materials

Five sets of soft-magnetic metals, such as pure Fe, pure Ni, Fe-3 wt% Si, Fe-6.5 wt% Si and Fe-17 wt% Co, were subjected to high pressure torsion (HPT) up to strain levels where a saturation of the microstructural refinement is observed. Following HPT at 77, 293 and 723 K, transmission electron microscopy (TEM) was used to study the grain size and grain shape of the severely deformed metals. The coercivity H_C was characterized in a magnetic closed system by using ring shaped samples. Magnetic measurements obtained on ring shaped samples give a much higher accuracy for determining the coercivity. Depending on the material the mean microstructural sizes in the steady state vary from 300 nm at 723 K to 30 nm at 77 K, respectively. The coercivity of the deformed materials first increases with decrease in grain size. Once the crystallite size is far below 100 nm the coercivity shows a strong decrease.     

Effect of Co underlayer on soft magnetic properties and microstructure of FeCo thin films

High saturation magnetization soft magnetic FeCo (=Fe₆₅Co₃₅) films were prepared using a thin Co underlayer. The FeCo/Co films exhibited a well-defined in-plane uniaxial anisotropy with easy axis coercivity (H_ce) of 10 Oe and hard axis coercivity (H_ch) of 3 Oe, and a half reduction of H_c with H_ce=4.8 Oe and H_ch=1.0 Oe was obtained when the composition was adjusted to 25 at% Co. The effective permeability of the films remains flat around 250 to 800 MHz. The saturation magnetostriction was 5.2×10⁻⁵ and the intrinsic stress was 0.8 GPa in FeCo single layer, both were slightly reduced by Co underlayer. The Co underlayer changed the preferred orientation of the FeCo films from (2 0 0) to (1 1 0) but more significantly, reduced the average grain size from ∼74 to ∼8.2 nm. It also reduced the surface roughness from 2.351 to 0.751 nm. The initial stage and interface diffusion properties were examined by TEM and XPS.     

Microfabrication and magnetoelectric properties of amorphous magnetic-tunnel-junctions with Co–Fe–B/Al–O/Co–Fe–B hardcore structure

Both single-barrier magnetic tunnel junctions (SBMTJs) and double-barrier magnetic tunnel junctions (DBMTJs) with an amorphous hardcore structure of Co₆₀Fe₂₀B₂₀/Al–O/Co₆₀Fe₂₀B₂₀ were microfabricated. A high TMR ratio of 102.2% at 4.2 K was observed in the SBMTJs after annealing at 265 °C for 1 h. High TMR ratio of 56.2%, low junction resistance-area product RS of 4.6 kΩ μm², small coercivity H_C=25 Oe, and relatively large bias-voltage-at-half-maximum TMR with the value V_1/2 greater than 500 mV at room temperature (RT) had been achieved in such Co–Fe–B SBMTJs. Whereas, high TMR ratio of 60% at RT and 89% at 30 K, low junction resistance-area product RS of 7.8 kΩ μm² at RT and 8.3 kΩ μm² at 30 K, low coercivity H_C=8.5 Oe at RT and H_C=14 Oe at 30 K, and relatively large bias-voltage-at-half-maximum TMR with the value V_1/2 greater than 1150 mV at RT had been achieved in the Co–Fe–B DBMTJs. Temperature dependence of the TMR ratio, resistance, and coercivity from 4.2 K to RT, and applied voltage dependence of the TMR ratio and resistance at RT for such amorphous MTJs were also investigated.     

Coercivity enhancement of Nd−Fe−B thin film magnets by Dy buffer and capping layers

The Dy layer was inserted into the structure of SiO₂/Ti/Nd-Fe-B/Ti as the buffer or capping layer of the Nd-Fe-B layer. The insertions of Dy layers had no significant influence on the film texture with the easy axis mainly perpendicular to the film plane. The film without Dy layer gave the out-of-plane coercivity of 533 kA/m, maximum magnetic energy product (BH)_max of 245 kJ/m³. With a Dy buffer layer, the out-of-plane coercivity and (BH)_max were increased to 1074 kA/m, 291 kJ/m³ respectively. The film with Dy capping layer had a coercivity of 1035 kA/m and (BH)_max of 286 kJ/m³. Microstructure observations showed that the Nd-rich phases were evolved into grain boundaries from triple junctions by a Dy buffer layer deposition, resulting in a well magnetic decoupling of Nd₂Fe₁₄B neighboring grains. Through capping a Dy layer, the environment of grain boundaries had been improved and some Dy diffused into Nd₂Fe₁₄B phases, which contributed to the enhancement of magnetic performance.     

Pulsed laser deposition and annealing of Dy-Fe-B thin films on melt-spun Nd-Fe-B ribbons for improved magnetic performance

Pulsed laser deposition of 250-nm thick, amorphous Dy₂Fe₁₄B layers on 40-μm thick Nd₂Fe₁₄B melt-spun ribbons was conducted to improve coercivity and energy product. The coated ribbons were subsequently annealed by two methods: (1) furnace annealing in an inert-gas controlled quartz furnace using tantalum foil at 1173 K for 2 h; (2) laser annealing using a continuous wave CO₂ laser with power varying from 10 to 20 W for 0.2 s (estimated temperatures using a thermal model were 993-1528 K). X-ray diffraction was used to identify the microstructural phases and grain size. Magnetic hysteresis tests were conducted at 300 K using a SQUID magnetometer with a maximum field of 5.0 T. Results showed a 10% increase in coercivity and 30% increase in energy product in coated over uncoated samples that were furnace-annealed. However, the coated and laser-annealed samples exhibited soft magnetic behavior with almost zero coercivity. The incomplete crystallization of amorphous phase and precipitation of α-Fe during laser annealing are found to be responsible for the observation of poor magnetic performance.     

Preparation and magnetic properties of hexagonal barium ferrite films using BaM nanoparticles

Barium ferrite (BaFe₁₂O₁₉—BaM) thick films have been synthesized using a spinning coating sol-gel process. The coating sol was formed from BaM powders dispersed in the BaM raw sol. XRD, SEM, EDX, vibrating sample magnetometer (VSM), and ac susceptometer, were employed to evaluate the structure, composition and magnetic properties of BaM thick films. The results indicated that a uniform and crack-free coating of BaM with ∼15 μm thickness can be produced with good deal of consistency. The perpendicular and in-plane coercivity had the same value of 5 kOe. The high coercivity is attributed to the magnetocrystalline anisotropy and grain size of the sintered BaM layer. Effective magnetic susceptibility in all measurements have linear variation with increasing dc field.     

Van der Pauw resistivity measurements on evaporated thin films of cadmium arsenide, Cd3As2

Cadmium arsenide is a II-V semiconductor, exhibiting n-type intrinsic conductivity with high mobility and narrow bandgap. It is deposited by thermal evaporation, and has shown the Schottky and Poole-Frenkel effects at high electric fields, but requires further electrical characterisation. This has now been extended to low-field van der Pauw lateral resistivity measurements on films of thickness up to 1.5 μm. Resistivity was observed to decrease with increasing film thickness up to 0.5 μm from about 3 × 10⁻³ Ω m to 10⁻⁵ Ω m, where the crystalline granular size increases with film thickness. This decrease in resistivity was attributed to a decrease in grain boundary scattering and increased mobility. Substrate temperature during deposition also influenced the resistivity, which decreased from around 10⁻⁴ Ω m to (10⁻⁵ to 10⁻⁶) Ω m for an increase in substrate deposition temperature from 300 K to 423 K. This behaviour appears to result from varying grain sizes and ratios of crystalline to amorphous material. Resistivity decreased with deposition rate, reaching a minimum value at about 1.5 nm s⁻¹, before slowly increasing again at higher rates. It was concluded that this resulted from a dependence of the film stoichiometry on deposition rate. The dependence of resistivity on temperature indicates that intercrystalline barriers dominate the conductivity at higher temperatures, with a hopping conduction process at low temperatures.     

Influence of sintering time on structural,magnetic and electrical properties of Si–Ca added Sr-hexa ferrites

Sr-hexa ferrites with the addition of Si (0.5 wt%) and Ca (0.5 wt%) have been prepared by solid-state reaction method with sintering time variation ranging from 2 to 10 h. The structural characterization of the samples confirmed the major phase of Sr-hexa ferrite. Average grain size was found within the range of 1–4 μm. Vicker hardness increased from 512 to 1187H_v. The coercivity and remanence had the ranges from 596 to 4255 Oe and 324 to 516 G, respectively. The DC electrical resistivity measurements were carried out by two-probe method as a function of temperature from 303 to 723 K. The room temperature DC resistivity increased from 1.67×10⁶ to 2.89×10⁸ Ω cm in turn the activation energy also increased from 0.314 to 0.495 eV. The DC electrical resistivity decreased while drift mobility increased with the rise in temperature, ensuring the semi-conducting behavior. Dielectric properties were studied as a function of frequency in the range of 80 Hz to 1 MHz at room temperature.     

Fabrication, magnetism and high frequency application of exchange-coupled Fe65Co35±2-SiO1.7±0.2 granular films

A series of (Fe₆₅Co_35±2)_x-(SiO_1.7±0.2)_1−x nano-granular films with various metal volume fractions (x) were fabricated by rf sputtering. In a wide range, excellent soft magnetic properties have been achieved. In the x range from 0.7 to 0.48, the films exhibit small coercivity H_c not exceeding 4 Oe and high electrical resistivity ρ up to 1.15 × 10⁴ μΩ cm. And a minimum H_c value of 1.65 Oe was obtained for the sample of x = 0.57 with ρ = 2.86 × 10³ μΩ cm. At a frequency lower than 2.0 GHz, the real part μ′ of complex permeability of this sample is more than 170 and the FMR frequency is as high as 2.6 GHz, implying a high cut-off frequency for high frequency applications. With decreasing Fe₆₅Co_35±2 volume fraction, the resistivity of films increases remarkably and the grain size decreases obviously. At the same time, the coercivity H_c decreases with grain size decreasing, which is consistent with the conclusion resulted from random anisotropy model quoted by Herzer. Study on Henkel plots shows that intergranular ferromagnetic exchange coupling exists among grains and is important for realizing soft magnetic properties.     

The ferroelectric and ferromagnetic characterization of CoFe2O4/Pb(Mg1/3Nb2/3)O3-PbTiO3 multilayered thin films

The multiferroic (PMN-PT/CFO)_n (n = 1,2) multilayered thin films have been prepared on SiO₂/Si(1 0 0) substrate with LNO as buffer layer via a rf magnetron sputtering method. The structure and surface morphology of multilayered thin films were determined by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. The smooth, dense and crack-free surface shows the excellent crystal quality with root-mean-square (RMS) roughness only 2.9 nm, and average grain size of CFO thin films on the surface is about 44 nm. The influence of the thin films thickness size, periodicity n and crystallite orientation on their properties including ferroelectric, ferromagnetic properties in the (PMN-PT/CFO)_n multilayered thin films were investigated. For multilayered thin films with n = 1 and n = 2, the remanent polarization Pr are 17.9 μC/cm² and 9.9 μC/cm²; the coercivity H_c are 1044 Oe and 660 Oe, respectively. In addition, the relative mechanism are also discussed.     

Nanocomposite L10 FePt–SiNx and FePt–SiNx–C films with large coercivity and small grain size on a TiN intermediate layer

FePt–SiN_x–C films with high coercivity, (001) texture and small grain size were obtained by co-sputtering FePt, Si₃N₄ and C on TiN/CrRu/glass substrate at 380 °C. Without C doping, FePt–SiN_x films with good perpendicular anisotropy and a single layer structure were obtained. However, the grain size was still too large and the grain isolation was poor. When C was doped into the FePt–SiN_x films, the out-of-plane coercivity increased due to the decrease of the exchange coupling. In addition, the grain size of the FePt films decreased, and well-separated FePt grains with uniform size were formed. The microstructure of [FePt–SiN_x 40 vol%]−20 vol% C films changed from a single layer structure to a multiple layer structure when the FePt thickness was increased from 4 to 10 nm. By optimizing the sputtering process, the [FePt (4 nm)–SiN_x 40 vol%]−20 vol% C (001) film with coercivity higher than 21.5 kOe, a single layer structure, and small average FePt grain size of 5.6 nm was obtained, which makes it suitable for ultrahigh density perpendicular recording.     

Thermomagnetic transitions and coercivity mechanism in bulk composite Nd60Fe30Al10 alloys

The thermomagnetic behaviour (within the temperature range 553-300 K) for the bulk composite Nd₆₀Fe₃₀Al₁₀ alloy is described in terms of a transition from paramagnetic to superferromagnetic state at T=553 K, followed by a ferromagnetic ordering for T<473 K. For the superferromagnetic regime, the alloy thermomagnetic response was associated to a homogeneous distribution of magnetic clusters with mean magnetic moment and size of 1072 μ_B and 2.5 nm, respectively. For T<473 K, a pinning model of domain walls described properly the alloy coercivity dependence with temperature, from which the domain wall width and the magnetic anisotropy constant were estimated as being of ≈8 nm and ≈10⁵ J/m³, typical values of hard magnetic phases. Results are supported by microstructural and magnetic domain observations.     

Fiber laser annealing of nanocrystalline PZT thick film prepared by aerosol deposition

Nanocrystalline PZT thick films (1 mm square and over 10 μm thick) directly deposited onto stainless-steel substrates (PZT/SUS) by aerosol deposition (AD) technique and then annealed using focused laser beam with a fiber laser to suppress thermal damage to the back sides of the PZT/SUS and substrate near the film edge and to retain the dielectric and/or ferroelectric properties of the PZT/SUS. Compared with CO₂ laser annealing, fiber laser annealing suppressed thermal damage to the substrate. Compared with PZT/SUS annealed at 600 °C using an electric furnace, PZT/SUS annealed at 600 °C using a fiber laser showed superior properties, namely, dielectric constant ? > 1200 at a frequency of 100 Hz, remanent polarization P_r > 30 μC/cm², and coercive field strength E_c < 50 kV/cm at a frequency of 10 Hz. Furthermore, the grain growth for the PZT/SUS formed by AD technique and annealed by fiber laser irradiation was occurred within the laser spot size.     

Exploration of fractal nature of WO3 nanowire aggregates

The morphology of WO₃ aggregates formed by irregular nanoparticles (D∼40 nm) and nanowires of different aspect ratios (2, 4, 6, and 10 μm nominal lengths) dispersed in commonly used polar solvents without dispersant agents is investigated using a small-angle light scattering technique and by means of fractal theory. Nanoparticles form compact spherical aggregates (D_f∼2.6), whereas 2 μm nanowires with low aspect ratio (L/D∼10) follow a slow cluster-cluster aggregation mechanism with no discernable change in fractal dimension (D_f=2.1) monitored in an extended period of 6 months, despite a notable growth in size (R_g=2.3-3.1 μm). For higher aspect ratio nanowires, scattered intensity profiles, which migrate towards the Porod regime, qualitatively obey the Lorenz-Mie theory predictions. The 10 μm nanowires with very high aspect ratio (L/D∼250) are observed to form stable dispersions in a time span of 6 days. Analytical methods based on spherical primary particle formulations predict D_f=1.9, 1.7, and 1.4 for 4, 6, and 10 μm nanowires, respectively.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Growth temperature dependence of the hysteretic behavior of Ni0.5Zn0.5Fe2O4 thin films

Herein, a discussion of the effect of deposition temperature on the magnetic behavior of Ni_0.5Zn_0.5Fe₂O₄ thin films. The thin films were grown by r.f. sputtering technique on (1 0 0) MgO single-crystal substrates at deposition temperatures ranging between 400 and 800 °C. The grain boundary microstructure was analyzed via atomic force microscopy (AFM). AFM images show that grain size (φ∼70-112 nm) increases with increasing deposition temperature, according to a diffusion growth model. From magneto-optical Kerr effect (MOKE) measurements at room temperature, coercive fields, H_c, between 37and 131 Oe were measured. The coercive field, H_c, as a function of grain size, reaches a maximum value of 131 Oe for φ ∼93 nm, while the relative saturation magnetization exhibits a minimum value at this grain size. The behaviors observed were interpreted as the existence of a critical size for the transition from single- to multi-domain regime. The saturation magnetization (21 emu/g<M_s<60 emu/g) was employed to quantify the critical magnetic intergranular correlation length (L_c≈166 nm), where a single-grain to coupled-grain behavior transition occurs. Experimental hysteresis loops were fitted by the Jiles-Atherton model (JAM). The value of the k-parameter of the JAM fitted by means of this model (k/μ_o∼50 A m²) was correlated to the domain size from the behavior of k, we observed a maximum in the density of defects for the sample with φ∼93 nm.     

Thin film transistors based on TiO2 fabricated by using radio-frequency magnetron sputtering

This study demonstrates that nanocrystalline TiO₂ thin films were deposited on ITO/glass substrate by radio-frequency magnetron sputtering. Field-emission scanning electron microscope (FE-SEM) and atomic force microscopic (AFM) images showed the morphology of TiO₂ channel layer with grain size and root-mean-square (RMS) roughness of 15 and 5.39 nm, respectively. TiO₂ thin-film transistors (TFTs) with sputter-SiO₂ gate dielectric layer were also fabricated. It was found that the devices exhibited enhancement mode characteristics with the threshold voltage of 7.5 V. With 8-μm gate length, it was also found that the I_on/off ratio and off-state current were around 1.45×10² and 10 nA, respectively.