By-product formation in spark breakdown of SF6/O2 mixtures

The yields of SOF₄, SO₂F₂, SOF₂, and SO₂ have been measured as a function of O₂ content in SF₆/O₂ mixtures, following spark discharges. All experiments were made at a spark energy of 8.7 J/spark, a total pressure of 133 kPa, and for O₂ additions of 0, 1, 2, 5, 10, and 20% to SF₆. Even for the case of no added O₂, trace amounts of O₂ and H₂O result in the formation of the above by-products. However, addition of O₂ significantly increases the yields of SOF₄ and SO₂F₂, while SOF₂ is only slightly affected. The net yields for SOF₄ and SO₂F₂ formation range from 0.18×10^–9 and 0.64×10^–10 mol·J^–1, respectively, at 1% O₂ content to 10.45×10^–9 and 7.15×10^–10 mol·J^–1, respectively, at 20% O₂ content. The mechanism for SOF₄ production appears to involve SF₄, an important initial product of SF₆, as a precursor. Comparison of the SOF₄ and SO₂F₂ yield from spark discharges (arc and corona) shows that the yields from other discharges (arc and corona) shows that the yields can vary by at least three orders of magnitude, depending on the type of discharge and on other discharge parameters.     

Gas-phase reactions in plasmas of SF6 with O2 in He

Processes which occur in microwave discharges of dilute mixtures of SF₆ and O₂ in He have been examined using a flow reactor sampled by a mass spectrometer. Two classes of experiments were performed. In the first set of experiments, mixtures containing 6×10¹¹ cm^–3 SF₆, 6×10¹⁶ cm^–3 He, and O₂ in the range (0–3.6)×10¹³ cm^–3 were passed through a 20-W 2450-MHz microwave discharge. The gas mixtures arriving at a sample point downstream from the discharge were examined for SF₆, SF₄, SOF₂, SOF₄, SO₂F₂, SO₂, F, and O. In the second class of experiments, rate coefficients were measured for the reactions of SF₄ with O and O₂ and for the reaction of SF with O. The rate coefficient for the reaction of SF with O was found to be (4.2±1.5)×10^–11 cm^–3 s^–1. SF₄ was found to react so slowly with both oxygen atoms and oxygen molecules that only upper limits could be placed on the rate coefficients for these reactions. These values were 2×10^–14 cm³ s^–1 and 5×10^–15 cm³ s^–1 for reactions with O and O₂ respectively. The observed distribution of products from the discharged mixtures is discussed in terms of the measured rate coefficients.     

Gas-phase reactions in plasmas of SF6 with O2: Reactions of F with SOF2 and SO2 and reactions of O with SOF2

The plasma chemistry of SF₆/O₂ mixtures is particularly complicated because of the large number of possible reactions. Over a wide range of conditions, products including SF₄, SOF₄, SOF₂, and SO₂F₂ can be formed but thre is considerable uncertainty about the major reactions which contribute to the formation of these species. In this work reactions of oxygen atoms with SOF₂ and fluorine atoms with SOF₂ and SO₂ have been studied in order to determine the principal sources of SO₂F₂ in these plasmas. Reactions were studied at 295 K in a gas flow reactor sampled by a mass spectrometer. No reaction could be detected between oxygen atoms and SOF₂, which for the conditions employed, means that the upper limit for the reaction rate coefficient is 1×10^–14 cm³ sec^–1. The reaction of fluorine atoms with SOF₂ was studied with the helium bath gas number density ranging from 3.1×10¹⁶ to 2.0×10¹⁷ cm^–3. Within this range the rate coefficient increased with increasing [He] from (4.1 to 10.8)×10^–14 cm³ sec^–1. SO₂ was found to react with fluorine atoms with a rate coefficient which appeared to be independent of the helium bath gas number density over the range given above. The possibility that this reaction occurred entirely on the walls of the reactor is discussed.     

Aspects of the chemistry of SF6/O2 plasmas

The production ofSOF ₄ initiated by the reaction of F atoms withSOF ₂ has been studied in a gas-flow reactor at 295 K for helium bath gas number densities in the range (3.0–27.0)×10¹⁶ cm^–3. The effect of O atoms on the formation ofSOF ₄ has been analyzed in terms of the competing reactionsSOF ₃+FSOF₄ andSOF ₃+OSO ₂ F ₂+F. This analysis leads to the conclusion that the rate coefficients for these two processes are equal within an uncertainty of about 50%. Furthermore, both experiment and calculations indicate that the rate coefficient for reactions between F atoms andSOF ₃ is close to its high-pressure limit under the conditions employed. The experiments set a lower limit on this rate coefficient of 5×10^–11 cm³ s^–1, while calculations based on unimolecular rate theory suggest that it may be greater than 1×10^–10 cm³ s^–1. These results make it clear that the two reactions shown above cannot explain the relative abundances ofSOF ₄ andSO ₂ F ₂ which are observed inSF ₆/O ₂ plasmas. This suggests thatSF ₂ is a major precursor in the sequence of reactions following the dissociation ofSF ₆.     

Negative ion formation in compounds relevant to SF6 decomposition in electrical discharges

Dissociative and nondissociative electron attachment in the electron impact energy range 0–14 eV are reported for SOF₂ SOF₄, SO₂F₂, SF₄, SO₂, and SiF₄ compounds which can be formed by electrical discharges in SF₆. The electron energy dependences of the mass-identified negative ions were determined in a time-of-flight mass spectrometer. The ions studied include F^– and SOF ₂ ^–* from SOF₂; SOF ₃ ^– and F^– from SOF₄; SO₂F ₂ ^–* , SO₂F^–, F ₂ ^– , and F^– from SO₂F₂; SF ₄ ^–* and F^– from SF₄; O^–, SO^–, and S^– from SO₂; and SiF ₃ ^– and F^– from SiF₄. Thermochemical data have been determined from the threshold energies of some of the fragment negative ions. Lifetimes of the anions SOF ₂ ^–* , SO₂F ₂ ^–* , and SF ₄ ^–* are also reported.     

Mass spectrometric study of SF6-N2 plasma during etching of silicon and tungsten

The reaction products in the SF₆-N₂ mixture rf plasma during reactive ion etching of Si and W have been measured by a mass spectrometric method. Two kinds of cathode materials were used in this work; they were stainless steel for the Si etching, and SiO₂ for the W etching. The main products detected in the etching experiments of Si and W included SF₄, SF₂, SO₂, SOF₂, SOF₄, SO₂F₂, NSF, NF₃, N₂F₄, N_xS_y, NO₂, and SiF₄. In the W etching with the SiO₂ cathode, additional S₂F₂, N₂O, and WF₆ molecules were also obtained. The formation reactions about the novel NSF compound and the sulfur oxyfuorides were discussed.     

Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products

Discrete electron-molecule processes relevant to SF₆ etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF₆, SO₂, SOF₂, SO₂F₂, SOF₄, and SF₄, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF₆ by-products in SF₆.     

The ablation of quartz wall by SF6 under radiofrequency discharge

The behaviour of SF₆ in quartz and alumina tubes of a flow reactor capacitively coupled to a 35 MHz radiofrequency generator has been investigated at pressure of 20 torr, with power levels of 3.5÷5.5 cal cm^?3 sec^?1 and gas flow rates ranging between 0.1 and 2 1(STP) min^?1. A combination of gaschromatographic, mass spectrometric and infrared spectrophotometric techniques has shown the presence of SO₂F₂, SOF₄, SOF₂, SiF₄, F₂, O₂ together with unreacted SF₆ in the discharge products.A detailed quantitative investigation of the effluent products and of their concentration profiles versus space time and power is presented and a general mechanism for the ablation process of the quartz wall is suggested.     

Gas-phase reactions of SF5, SF2, and SOF with O(3 P): Their significance in plasma processing

Reactions of both SF₅ and SF₂ with O(³ P) and molecular oxygen have been studied at 295 K in a gas flow reactor sampled by a mass spectrometer. For reactions with O(³ P), rate coefficients of (2.0±0.5)×10^–11 cm³ s^–1 and (10.8±2.0)×10^–11 cm³ s^–1 were obtained for SF₅ and SF₂ respectively. The rate coefficients for reactions with O₂ are orders of magnitude lower, with an estimated upper limit of 5×10^–16 cm³ s^–1 for both SF₅ and SF₂. Reaction of SF₂ with O(³ P) leads to the production of SOF which then reacts with O(³ P) with a rate coefficient of (7.9±2.0)×10^–11 cm³ s^–1. Both SO and SO₂ are products in the reaction sequence initiated by reaction between SF₂ and O(³ P). Although considerable uncertainty exists for the heat of formation of SOF, it appears that SO arises only from reaction between SOF and O atoms which is also the source of SO₂. These results are discussed in terms of a reaction scheme proposed earlier to explain processes occurring during the plasma etching of Si in SF₆/O₂ plasmas. A comparison between the results obtained here and those reported earlier for reactions of both CF₃ and CF₂ with O and O₂ shows that there is a marked similarity in the free radical chemistry which occurs in SF₆/O₂ and CF₄/O₂ plasmas.     

Oxidization of SO2 by Reactive Oxygen Species for Flue Gas Desulfurization and H2SO4 Production

A strong ionization dielectric barrier discharge was used to produce a high concentration of reactive oxygen species that were then injected into a simulated flue gas in a duct to remove SO₂ by oxidation. Sulfuric acid (H₂SO₄) was produced through the following two reactions: (1) O₃ oxidation of SO₂–SO₃, which then reacted with H₂O to produce H₂SO₄; and (2) reaction of O₂ ⁺ with H₂O to produce ·OH radicals, which then rapidly and non-selectively oxidized SO₂–H₂SO₄. When the molar ratio of reactive oxygen species to SO₂ was 4:1, the SO₂ removal efficiency was 94.6%, the energy consumption per cubic meter of flue gas was 13.3 Wh/m³, the concentration of recovered H₂SO₄ was 4.53 g/l, and the H₂SO₄ recovery efficiency was 28.8%. The H₂O volume fraction in the simulated flue gas affected the SO₂ removal efficiency, whereas the O₂ and CO₂ volume fractions did not. These results prove that oxidation by reactive oxygen species is a feasible method for flue gas desulfurization.     

Isotope Tracing Experiment on the Mechanism of O2 on the Over-Thermal Decomposition of SF6

In gas-insulated equipment, partial over-thermal faults may occur due to poor contact and other reasons. The main insulation medium SF₆ may decompose under over-thermal conditions and produce harmful products such as SO₂ and HF, which can damage the equipment and reduce the insulation strength of the equipment. The method of decomposition component analysis can monitor the operating status of equipment without interference from machinery, noise and optics, and provide early warning or reminder of faults, but the premise is that the decomposition mechanism of SF₆ must have been fully and in-depth understood. In the decomposition process of SF₆, O₂ has a significant effect, but the mechanism of the effect is still unclear. Based on the isotope tracing method, this paper uses ¹⁸O₂ instead of ordinary O₂ for overheating experiments. Through the quantitative detection of the labeled products in the product and the abundance of ¹⁸O isotope in the products, the effect of O₂ on the formation of the main decomposition products was analyzed. The work makes the reaction process and mechanism of SF₆ with trace oxygen under over-thermal conditions basically clear, which provides an important theoretical basis for on-line monitoring and fault diagnosis of equipment based on chemical analysis methods.

     

Inorganic volatile fluorides obtained from electrical decomposition of sulfur hexafluoride in a quartz tube

Recent investigations on sulfur hexafluoride decomposition have shown the need of a rapid and efficient method for the qualitative and quantitative analysis of the reaction products. An analytical method for characterizing the gas mixture obtained from the decomposition of sulfur hexafluoride in a quartz reactor submitted to an r.f. discharge, is presented. A combination of gas-chromatographic, mass spectrometric and infrared spectrophotometric techniques has shown the presence of SF₆, SO₂F₂, SOF₄, SOF₂, SiF₄ and F₂ in the gas mixtures examined. For quantitative purposes a gas-chromatographic method has been found to be most suitable.     

Gas analysis by infrared spectroscopy as a tool for electrical fault diagnostics in SF6 insulated equipment

Infrared spectroscopy shows an enormous potential for the analysis of by-products generated from electrical discharges in sulfur-hexafluoride (SF₆) insulated equipment. Since by-product composition can be related to the fault genesis (arc, partial discharge or corona), the analysis of contaminated SF₆ provides a valuable diagnostic tool. The IR-spectrometric results from discharge experiments are presented, carried out with the application of SF₆ pressures around 300?kPa and an alternating voltage up to 30?kV. Under the discharge conditions used, the main by-products found are the sulfuroxyfluorides SOF₄ and SO₂F₂ with concentrations correlated to the discharge time. Due to its toxicity, special attention is also paid to S₂F₁₀. The experimental conditions and practical aspects for reliable quantitative analysis of reactive species are discussed.     

Syntheses and crystal structures of [Na(H2O)](C17H13O6SO3)* 2H2O and [NKH2O)6]C17H13O6SO3)2*H2O

Two hydrates of sodium 5,7‐dihydroxy‐6,4′‐dimethoxyisoflavone‐3′‐sulfonate ([Na(H₂O)J(C₁₇H₁₃O₆SO₃)*2H₂O,] 1) and nickel 5,7‐dihydroxy‐6,4′‐dimethoxyisoflavone‐3′‐sulfonate ([Ni(H₂O)₆](C₁₇H₁₃O₆SO₃)₂*4H₂O, 2) were synthesized and characterized by IR, 'H NMR and X‐ray diffraction analyses. The hydrate 1 crystallizes in the mono‐clinic system, space group P2(1) with a=0.8201(9) nm, b=0.8030(8) nm, c= 1.5361(16) nm, β=102.052(12)°, V =0.9893(18) nm³, D,= 1.579 g/cm³, Z=2, μ=0.252 nm^?1, F(000)=488, R=0.0353, wR=0.0873. The hydrate 2 belongs to triclinic system, space group P‐1 with a=0.7411(3) nm, b=0.8333(3) nm, c=1.7448(7) nm, α= 86.361(6)°, β=86.389(5)°, γ= 88.999(3)°, V=1.0731(7) nm³, D,=1.587 g/cm³, Z=1, μ=0.649 m^?1, F(000)= 534. In the structure of 1, the sodium cation is coordinated by six oxygen atom and two adjacent ones are bridged by three oxygen atoms to form an octahedron chain. The C? H…?… hydrogen bonds exist between two isoflavone molecules in the structure of 2. Meanwhile, hydrogen bonds in two compounds, link themselves to assemble two three‐dimensional network structures, respectively.     

Freezing-point of mixtures of H 2 16 O and H 2 18 O

Freezing-point depression of mixtures of H ₂ ¹⁶ O and H ₂ ¹⁸ O were measured. The results showed that the freezing point of the mixture rose linearly with an increase in the molal concentration of H ₂ ¹⁸ O. The results suggested the formation of a solid solution of H ₂ ¹⁶ O and H ₂ ¹⁸ O by freezing, similar to that formed by H ₂ O–D ₂ O, and that H ₂ ¹⁸ O behaves as a different molecule than H ₂ ¹⁶ O.     

A model for the etching of silicon in SF6/O2 plasmas

A model has been developed to describe the chemistry which occurs in SF₆/O₂ plasmas and the etching of silicon in these plasmas. Emphasis is placed nn the gas-phase free radical reactions, and the predictions n( the model are compared with experimental results. Forty-seven reactions are included, although a subset of 18 reactions describes the chemistry equally well. Agreement between the calculated and measured concentrations of stable products downstream of the plasma is better than a factor of 2. The need for additional kinetic data and fàr well-characterized diagnostic studies of SF₆/O₂ plasmas is discussed.     

Synthesis and Crystal Structure of Europium(II) Tartrate Tetrahydrate, [Eu(C4H4O6)(H2O)2](H2O)2

Single crystals of [Eu(C₄H₄O₆)(H₂O)₂](H₂O)₂ were obtained from the combination of solutions of EuCl₂, previously obtained by electrolysis of an aqueous solution of EuCl₃, and tartraric acid, neutralized by LiOH. The crystal structure (orthorhombic, P2₁2₁2₁, Z = 4, a = 948.9(1), b = 954.6(1), c = 1098.4(1) pm; R(F) = 0.0242 and R_w(F²) = 0.0585 for I > 2σ(I); R(F) = 0.0256 and R_w(F²) = 0.0592 for all data) is isotypic with [Ca(C₄H₄O₆)(H₂O)₂](H₂O)₂ and [Sr(C₄H₄O₆)(H₂O)₂](H₂O)₂ exhibiting a three‐dimensional structure. The divalent cations (Eu²⁺, Ca²⁺, Sr²⁺) are eight‐coordinate by oxygen atoms that originate from carboxylate and hydroxyl groups of the tartraric dianion and two of the four water molecules.     

TG/DTA/MS Study of the thermal decomposition of FeSO4·6H2O

The thermal decomposition of FeSO₄·6H₂O was studied by mass spectroscopy coupled with DTA/TG thermal analysis under inert atmosphere. On the ground of TG measurements, the mechanism of decomposition of FeSO₄·6H₂O is: i) three dehydration steps FeSO₄·6H₂O FeSO₄·4H₂O+2H₂O FeSO₄·4H₂O FeSO₄·H₂O+3H₂O FeSO₄·H₂O FeSO4+H₂O ii) two decomposition steps 6FeSO₄ Fe₂(SO₄)₃+2Fe₂O₃+2SO₂ Fe₂(SO₄)3 Fe₂O₃+3SO₂+3/2O₂ The intermediate compound was identified as Fe₂(SO₄)₃ and the final product as the hematite Fe₂O₃.     

Spectrokinetic study of SF5 and SF5O2 radicals and the reaction of SF5O2 with NO

UV spectra of SF₅ and SF₅O₂ radicals in the gas phase at 295 K have been quantified using a pulse radiolysis UV absorption technique. The absorption spectrum of SF₅ was quantified from 220 to 240 nm. The absorption cross section at 220 nm was (5.5 ± 1.7) × 10⁻¹⁹ cm². When SF₅ was produced in the presence of O₂ an equilibrium between SF₅, O₂, and SF₅O₂ was established. The rate constant for the reaction of SF₅ radicals with O₂ was (8 ± 2) × 10⁻¹³ cm³ molecule⁻¹ s⁻¹. The decomposition rate constant for SF₅O₂ was (1.0 ± 0.5) × 10⁵ s⁻¹, giving an equilibrium constant of K_eq = [SF₅O₂]/[SF₅][O₂] = (8.0 ± 4.5) × 10⁻¹⁸ cm³ molecule⁻¹. The SF₅ O₂ bond strength is (13.7 ± 2.0) kcal mol⁻¹. The SF₅O₂ spectrum was broad with no fine structure and similar to the UV spectra of alkyl peroxy radicals. The absorption cross section at 230 nm was found to (3.7 ± 0.9) × 10⁻¹⁸ cm². The rate constant of the reaction of SF₅O₂ with NO was measured to (1.1 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹ by monitoring the kinetics of NO₂ formation at 400 nm. The rate constant for the reaction of F atoms with SF₄ was measured by two relative methods to be (1.3 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹. © 1994 John Wiley & Sons, Inc.     

Influence of Metallic Materials on SF<Subscript>6</Subscript> Decomposition Components under Positive DC Partial Discharge

Determination of the influence and mechanism of metallic materials on SF₆ decomposition under direct current (DC) partial discharge is one of the key aspects to improve SF₆ decomposition component analysis (DCA). In this study, three kinds of metallic materials, namely, aluminum, copper, and 18/8 stainless steel, were made into needle–plate electrons, and then used in the SF₆ positive DC partial discharge decomposition experiments. The influences of metallic materials on the five main decomposition components (i.e., CF₄, CO₂, SOF₂, SO₂F₂, and SO₂) were determined by gas chromatography–mass spectrometry. Results showed no significant correlation among the contents of CO₂ for the different kinds of metallic materials. However, the metallic materials considerably influenced the contents of the other four gases. The difference in SF₆ decomposition characteristics for the different metal electrodes was mainly due to the difference in anti-halogenation ability of metals and the passive film. Therefore, the impacts of different metallic materials should be considered when using SF₆ DCA for the condition monitoring and fault diagnosis of DC gas-insulated equipment.