不锈钢载波钝化膜的半导体性质

运用交流阻抗法和光电化学法研究了不锈钢载波钝化膜层的半导体性质。讨论了交流阻抗测试中扰动频率的变化对Mott-Schottky曲线的影响，讨论了不锈钢载波钝化膜的n/p型、杂质施主密度和平带电位等半导体性质，同时结合光电化学法对交流阻抗测试结果进行了验证分析，实验结果认为不锈钢载波钝化膜层具有与直流钝化膜层相似的半导体性质，并通过膜层的组成结构对其半导体性质作了分析。     

CuI半导体膜的电化学制备与性质

CuI半导体膜的电化学制备与性质;ＣｕＩ半导体;交流阻抗;平带电位     

不同浓度比的硫酸根和氯离子溶液中钝化膜的半导体特性转变机制研究

800合金作为核电站蒸汽发生器的一种关键材料,服役环境下其表面钝化膜的特性一直是人们研究的热点. 本文用Mott-Schottky方法研究了800合金在不同硫酸根离子和氯离子浓度比的溶液中钝化膜的半导体特性,并结合电化学阻抗谱（EIS）、扫描电镜（SEM）、扫描电化学显微镜（SECM）研究了钝化膜的耐蚀性和表面活性. Mott-Schottky结果表明,800合金表面钝化膜的半导体特性与溶液中硫酸根、氯离子的浓度比有关,随硫酸根与氯离子浓度比的降低,半导体特性发生转变. 当硫酸根与氯离子的浓度比较高时,钝化膜为p型半导体;而当硫酸根与氯离子的浓度比较低时,钝化膜为n型半导体. EIS、SECM、SEM结果表明,随浓度比的降低钝化膜由过钝化溶解转为明显的点蚀特征,钝化膜表面活性增加. 钝化膜特性的改变与其半导体类型的转变密切相关,而半导体特性的转变由氯离子、硫酸根离子在800合金钝化膜表面的竞争吸附所致,其在表面的竞争吸附直接影响钝化膜表面发生的化学反应,改变电极/溶液界面电势差,使钝化膜中的空位类型改变,最终决定半导体类型.     

不同浓度比的硫酸根和氯离子溶液中钝化膜的半导体特性转变机制研究

800合金作为核电站蒸汽发生器的一种关键材料,服役环境下其表面钝化膜的特性一直是人们研究的热点.本文用Mott-Schottky方法研究了800合金在不同硫酸根离子和氯离子浓度比的溶液中钝化膜的半导体特性,并结合电化学阻抗谱(EIS)、扫描电镜(SEM)、扫描电化学显微镜(SECM)研究了钝化膜的耐蚀性和表面活性.Mott-Schottky结果表明,800合金表面钝化膜的半导体特性与溶液中硫酸根、氯离子的浓度比有关,随硫酸根与氯离子浓度比的降低,半导体特性发生转变.当硫酸根与氯离子的浓度比较高时,钝化膜为p型半导体;而当硫酸根与氯离子的浓度比较低时,钝化膜为n型半导体.EIS、SECM、SEM结果表明,随浓度比的降低钝化膜由过钝化溶解转为明显的点蚀特征,钝化膜表面活性增加.钝化膜特性的改变与其半导体类型的转变密切相关,而半导体特性的转变由氯离子、硫酸根离子在800合金钝化膜表面的竞争吸附所致,其在表面的竞争吸附直接影响钝化膜表面发生的化学反应,改变电极/溶液界面电势差,使钝化膜中的空位类型改变,最终决定半导体类型.     

电容测量研究铬表面氧化膜的半导体性能

利用电容测量技术,基于Mott-Sckottky分析,研究了在0.5 mol•L－1 H2SO4溶液中铬表面氧化膜的半导体性质,以及膜形成条件的影响.结果表明,铬在钝化电位区内所形成的表面氧化膜具有p-型半导体特性,膜的厚度约(1.2±0.3) nm.膜的阻抗响应表现出低频弥散行为,可以用介电弛豫普适定律来描述.膜的掺杂浓度NA随成膜电位及极化时间的延长而增大,溶液pH值则通过改变膜的表面电荷而影响膜的平带电位EFB.     

酸性AlCl3-BMIC离子液体中的铝阳极溶解

采用线性扫描伏安法研究了Lewis 酸性AlCl₃-BMIC (BMIC: 1-butyl-3-methylimidazolium chloride)离子液体中铝电极的溶解. 铝电极在阳极极化时出现了钝化现象, 钝化是由于在铝电极表面形成了固体AlCl₃钝化膜造成的. 铝的电化学溶解过程可以依次分为三个区: 电化学控制区、过渡区和钝化区. 在电化学控制区, 铝的电化学溶解速率随着电位的正移而逐渐增加; 在过渡区, 由于电极表面AlCl₄^-和Al₂Cl₇^-浓度发生改变而析出固体AlCl₃使得铝电化学溶解速率随着电位的正移而逐渐减小; 当钝化膜形成之后, 铝的电化学溶解速率不再随着电位的正移而发生改变, 铝溶解进入钝化区. 增加搅拌、升高温度、降低离子液体AlCl₃摩尔分数都可以增加铝溶解阳极极限电流密度.     

Co-W合金镀层表面氧化膜在碱性体系中的电化学研究

采用电化学手段以及Mott-Schottky理论, 并结合氧化膜点缺陷模型(PDM)分析研究了Co-W合金镀层在1 mol• L^－1 NaOH溶液中表面氧化膜的半导体性质, 并分别计算出了不同W含量的Co-W合金镀层在－0.15, －0.25和－0.35 V三个不同电位下阳极氧化后氧化膜的供体密度、平带电位及氧空穴扩散系数. 结果表明, Co-W合金镀层在1 mol•L^－1 NaOH溶液中表面氧化膜的Mott-Schottky曲线线性区斜率为正, 表现出N型半导体性质|随着阳极氧化电位的升高或合金镀层W含量的降低, 氧化膜供体密度N_D逐渐增大, 导致氧化膜被破坏或发生点蚀的几率升高|随着阳极氧化电位的降低或合金镀层W含量的降低, 氧化膜平带电位呈降低趋势, 说明其耐蚀性升高|不同W含量的Co-W合金镀层在三个不同电位下阳极氧化后的氧化膜的氧空穴扩散系数为(1.543～8.533)×10^－14 cm²•s^－1.     

不同晶粒度螺纹钢的电化学行为及其钝化膜的Mott-Schottky 研究

利用交流阻抗谱和极化曲线研究比较了四组不同晶粒尺寸的螺纹钢在模拟海水液(3.5% NaCl)中短期电化学腐蚀行为; 利用硼酸缓冲液中钝化膜的Mott-Schottky 理论比较了各试样在不同阳极极化电位下的钝化膜的优劣性. 结果表明, 在14 d 的模拟海水短期浸泡期间, 细晶粒螺纹钢在后期表现出较大阻抗值和较小的自腐蚀电流密度, 耐蚀性能优于粗晶粒试样. 在硼酸缓冲液中形成的钝化膜表现出典型的n 型半导体性能, 公共钝化区间为-0.15～0.8 V. 在选取的-0.1, 0.2, 0.5 V 三个不同极化电位下, 细晶粒螺纹钢在硼酸缓冲液中的钝化膜稳定性、耐蚀性弱于粗晶粒螺纹钢. 在0.5 V 的外加电压下试样钝化膜的内层膜消失, 钝化膜的施主浓度最低, 膜最为致密、稳定.     

烯胺阻锈剂对钢筋在模拟碳化混凝土孔隙液中的点蚀抑制

通过电化学噪声(ECN)、电化学阻抗(EIS)及极化曲线研究了四乙烯五胺(TEPA)在碳化模拟混凝土孔隙液中对Q345B碳钢点蚀的抑制机理. 结果表明: 通过吸附成膜和隔离Cl^-离子对钝化膜的侵蚀, TEPA浓度升高导致碳钢点蚀电位正移. 低浓度的TEPA会造成亚稳态蚀点形核速率略微增加, 但会降低其寿命. 随着TEPA浓度增加, 噪声电阻上升, 而亚稳态蚀点寿命和平均点蚀电量则迅速下降, 表明其明显加速了亚稳态蚀点修复, 当TEPA浓度达0.10 mol·L^-1时, 噪声峰消失, 基底电流趋于零, 蚀点全面钝化. TEPA不仅能抑制Cl^-离子引起的亚稳态和稳态蚀点生长, 还可吸附于钝化膜表面, 抑制膜的均匀溶解. 形貌观察表明, 亚稳态蚀点主要在稳态蚀点周围形核和生长, 并不断为稳态蚀点所吞并, 造成碳钢表面蚀坑一般沿平面而不是垂直方式扩展.     

醇类在Si-H表面形成单分子膜的特性

以界面电容分析法为主并结合XPS、AFM技术研究了醇类分子在Si(111)-H表面上形成的有机单分子膜的特性。并探讨了嫁接反应中影响单分子膜特性的某些因素和单分子膜的稳定性及其对硅表面氧化的钝化作用。在所选择的反应条件下，不同链长醇分子修饰的硅表面上，嫁接分子所占体积分数约为80％，平带电位约为-1．00V(vs.SSE)。研究表明，这类膜稳定性和对硅表面氧化的钝化作用非常有限。     

Improvement of pitting corrosion resistance of a biomedical grade 316LVM stainless steel by electrochemical modification of the passive film semiconducting properties

In the present paper we show that a significant improvement in pitting corrosion resistance of a biomedical grade stainless steel, 316LVM, can be achieved by the formation of a surface passive oxide film under cyclic potentiodyanamic polarization (passivation) conditions. A complete absence of pitting in physiological simulating solutions was demonstrated, while the electrochemically formed passive film maintained its very high pitting resistance even at higher chloride concentrations in the bulk solution. The improvement in the film’s pitting corrosion resistance was correlated with its semiconducting properties.     

Influence of Cr on the Electronic Properties of Passive Film on B30 Alloy in NaOH Solution

The influence of Cr on the electronic properties of the passive film on B30 alloy in NaOH solution was studied via electrochemical impedance spectra(EIS), potentiodynamic curve and Mott-Schottky plot. The Cr doped in the passive film on B30 alloy was detected by X-ray photoelectron spectroscopy(XPS). XPS results show that Cr₂O₃ appeared on the passive film, which implied the enhanced anti-corrosion of B30 alloy. The passive film showed a p-type semi-conductive character. The acceptor density(N_A) was in an order of magnitude of 10²² cm^-3, and N_A decreased with the increment of Cr. EIS results show that the film resistance(R_f) increased with increasing the amount of Cr. The diffusion coefficient(D₀) was calculated to be in a range of 10^-16-10^-17 cm^-2/s on the basement of point defect model(PDM).     

Fe基合金钝化膜点蚀敏感性的电化学研究

应用电位扫描、交流阻抗、电化学噪声等方法研究Fe及其合金在中性水溶液中钝化膜的形成过程、电子性质和点蚀敏感性以及不同微组织结构间的相互作用.结果表明:由Mott-Schot tky关系式确定钝化膜的电子性质仅限于较窄的低电位范围;在较高电位下,电容倒数与电位的线性关系当归因于钝化膜厚度的变化;反映钝化膜缺陷的电子性质与合金的点蚀敏感性有关,钝化膜电子供给体浓度越高,点蚀倾向越强。钝化膜的电子性质受钝化膜形成电位、钝化剂种类以及合金的微组织结构影响;不同微组织结构之间存在相互作用,这种相互作用能够诱导缺陷较大的一方发生点蚀。铁素体与珠光体和/或马素体相互作用时,点蚀在铁素体形成和发展.     

海水环境中典型阴离子对5083铝合金腐蚀行为的影响

采用析因分析试验及动电位极化曲线、电化学阻抗谱(EIS)等测试方法,研究了海水环境因素中的典型阴离子（Cl^-、HCO₃^-、SO₄^2-交互作用对5083铝合金耐蚀性的影响. 结果表明,三种阴离子中,Cl^-、HCO₃^-对铝合金点蚀起促进作用. Cl-与HCO₃^-交互作用时,在Cl^-浓度一定的情况下,随着HCO₃^-浓度的增加,5083铝合金耐蚀性呈现出上升→下降→再上升的趋势,在70～90mg•L^-1时耐蚀性能明显降低;在HCO₃^-浓度一定的情况下,Cl^-浓度较低时5083铝合金耐蚀性比Cl^-浓度较高时差. 在Cl^-、HCO₃^-浓度较低情况下,SO₄^2-具有抑制腐蚀的作用;当Cl^-、HCO₃^-浓度较高时,SO₄^2-抑制腐蚀的作用不明显.     

The effect of passivated potential on the passive films formed on pure chromium in borate buffer solution

The effect of passivated potential on corrosion resistance of the chromium in borate buffer solution was investigated. The electrochemical results showed that corrosion resistance of the passive film on the chromium electrode decreased with the increasing of passivated potential. The Mott–Schottky analysis showed that more acceptor concentrations in passive film due to higher passivated potential deteriorated corrosion resistance of the chromium electrode. The results from XPS showed that more chromium hydroxides were formed in higher passivated potential, while less chromium oxides were formed. More acceptor concentrations in passive films reduced corrosion resistance of the chromium electrode in borate buffer solution. Copyright © 2016 John Wiley & Sons, Ltd.     

22Cr双相不锈钢钝化膜组成及其半导体性能研究

借助于Mott-Schottky方程分析了成膜电位、成膜时间、成膜温度以及氯离子等因素对22Cr双相不锈钢在碳酸氢钠/碳酸钠缓冲溶液中所成钝化膜半导体性能的影响, 同时借助于X射线光电子能谱(XPS)技术分析了所成钝化膜的组成. 结果表明: 22Cr双相不锈钢在碳酸氢钠/碳酸钠缓冲溶液中所成钝化膜呈n-p型半导体结构, 钝化膜内施主/受主密度随成膜电位增加、成膜时间延长、成膜温度降低、以及介质中氯离子浓度的降低而减小, 同时膜对基体保护作用随这些因素变化而增强. 钝化膜的XPS分析表明, 钝化膜呈现双层结构, 外层膜主要由三价铁的氧化物(Fe2O3)组成, 内层膜主要由三价铬氧化物(Cr2O3)以及少量二价铁氧化物(FeO)组成.     

NiO/TiO2异质结构纳米管阵列膜对不锈钢的光生阴极保护及其储能性能

本工作通过修饰TiO₂制备半导体复合膜,提高其光吸收和光电化学性能,以期应用于光生阴极保护。先采用阳极氧化法在Ti表面制备TiO₂纳米管阵列膜,再应用水热处理法在膜表面沉积NiO纳米颗粒,形成具有异质结构纳米管复合膜。利用扫描电子显微镜、X-射线衍射、X-射线光电子能谱、紫外-可见吸收光谱、光致发光谱和光电化学技术对制备的纳米膜进行表征。结果表明,与纯TiO₂纳米管膜比较,NiO/TiO₂纳米管复合膜的光吸收扩展到可见光区。白光照射下,其在0.5 mol·L^?1 KOH和1 mol·L^?1 CH3OH混合液中的光电流密度达到176μA·cm^?2,是纯TiO₂纳米管膜的2倍。复合膜具有良好的光生阴极保护作用,与0.5 mol·L^?1 NaCl溶液中的403不锈钢耦连后,可使其电极电位下降440 mV,在光照2.5 h再转为暗态后,因具有电荷储存能力还可继续提供约15.5 h的阴极保护效应。     

Effect of oxygen vacancies in anodic titanium oxide films on the kinetics of the oxygen electrode reaction

The effect of oxygen vacancies in the anodic oxide film on passive titanium on the kinetics of the oxygen electrode reaction has been studied by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). Oxide films of different donor density were prepared galvanostatically at various current densities until a potential of 20.0 V_SHE was achieved. The semiconductive properties of the oxide films were characterized using EIS and Mott-Schottky analysis, and the thickness was measured using ellipsometry. The film thickness was found to be almost constant at ∼44.7 ± 2.0 nm, but Mott-Schottky analysis of the measured high frequency interracial capacitance showed that the donor (oxygen vacancy) density in the n-type passive film decreased sharply with increasing oxide film formation rate (current density). Passive titanium surfaces covering a wide range of donor density were used as substrates for ascertaining relationships between the rates of oxygen reduction/evolution and the donor density. These studies show that the rates of both reactions are higher for passive films having higher donor densities. Possible explanations include enhancement of the conductivity of the film due to the vacancies facilitating charge transfer and the surface oxygen vacancies acting as catalytic sites for the reactions. The possible involvement of surface oxygen vacancies in the oxygen electrode reaction was explored by determining the kinetic order of the OER with respect to the donor concentration. The kinetic orders were found to be greater than zero, indicating that oxygen vacancies are involved as electrocatalytic reaction centers in both the oxygen evolution and reduction reactions. This paper was submitted in honor of the many contributions to electrochemistry that have been made by Professor Boris Grafov. The article is published in the original.     

Effect of Sn content on the properties of passive film on PbSn alloy in sulfuric acid solution

The effect of Sn content on properties of anodic film formed on PbSn alloys in sulfuric acid solution was investigated using linear sweeping voltage (LSV), cyclic voltammetry (CV), and a.c. voltammetry (ACV), based on the Mott-Schottky analysis. The results revealed that the addition of Sn into lead alloys can promote the corrosion resistance property and could decrease the impedance of anodic film; these results were more remarkable with enhancing the Sn content. The over potential of oxygen evolution on lead alloys enhanced with the increase of Sn content. The Mott-Schottky analysis indicated that the passive film appeared an n-type semiconductor, and the donor density of passive film increased with increasing Sn content. The increased vacancies in the passive film with Sn content increasing could illustrate this trend.