Quantum diffusion of muonium in GaAs

The diffusion rate of muonium in the III–V compound semiconductor GaAs has been determined from measurements of muon spinT ₁ relaxation induced by motion in the presence of nuclear hyperfine interactions. It is shown for the first time in a semiconductor that (a) there is a crossover of the transport mechanism at about 90 K from stochastic to zero-phonon hopping, as evidenced by a steep rise in the hop rate at lower temperatures, and that (b) the muonium diffuses at the hop rate of 10¹⁰ s⁻¹ (corresponding diffusion constantD≈10⁻⁶ cm²s⁻¹) at lower temperatures as well as at room temperature.     

Addition and spin exchange rate constants by longitudinal field μSR: The Mu+NO reaction

The addition reaction Mu+NO+M→MuNO+M and the spin exchange reaction Mu(↑) +MO(↓)→Mu(↓)+NO(↑) have been measured by longitudinal field μSR at room temperature in the presence of up to 58 atm of N₂ as inert collider. The pressure dependence of the longitudinal relaxation rate due to the addition reaction (λ_c) demostrates that the system is still in the low pressure regime in this pressure range. The corresponding termolecular rate constant has been determined ask _0,Mu =(1.10±0.25)×10⁻³² cm⁶ molecules⁻² s⁻¹, almost 4 times smaller than the corresponding H atom reactionk _0,H=3.90×10⁻³² cm⁶ molecules⁻² s⁻¹ [I.M. Campbell et al., J. Chem. Soc. Faraday Trans. 1.71 (1975) 2097]. The average value of the spin exchange rate constants in the 2.5–58 atm pressure range,k _SE=(3.16±0.06)×10⁻¹⁰ cm³ molecule⁻¹ s⁻¹, is in good agreement with previous values obtained by transverse field μSR [D.G. Fleming et al., J. Chem. Phys. 73 (1980) 2751].     

Muon spin relaxation for Ar+NO2 systems in transverse and longitudinal magnetic fields

Surface muons produced in UT-MSL were introduced into argon gas of 4.0±0.2 atm with NO₂ (0–30 ppm), and muonium signals were detected in the presence of a transverse (1.7–3.4 G) and a longitudinal magnetic field (0–3.5 kG) at 295±1 K. The cross section for the transverse relaxation was (11.0±1.0)×10⁻¹⁶ cm². The relaxation rates in different longitudinal magnetic fields show that the rate does not follow the conventional equation which assumes that the relaxation occurs mainly by spin-exchange interaction. Similar measurements were performed for the Mu+O₂ system. These findings indicate that chemical reactions contribute to these relaxation rates.     

Chemical dynamics of muonium in liquids

The bimolecular rate constants for muonium addition to ethene (CH₂=CH₂) in hydrocarbon liquids were found to be ∼2×10¹⁰ M⁻¹s⁻¹. These rate constants change with temperature in accordance with the Arrhenius equation; but the energy barrier to reaction (E_a) in 2-methylbutane is much less than that for viscous flow. This suggests either non-classical interaction rates stemming from the quantum character for muonium, or non-Stokes-Einstein behavior.     

Final states in Si and GaAs via RF μSR spectroscopy

The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu^* states at any temperature. However, our results on the diamagnetic final state (μ _f ⁺ ) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu^* and Mu. We observe a full μ _f ⁺ fraction at 317 K when the Mu relaxation rate is above 10 μs⁻¹. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu^* and Mu to a μ⁺ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively.     

Muon/Muonium in an Isotopically Pure 13C Diamond

A preliminary study of the diamagnetic (μ_d) and the paramagnetic (Mu _T ) states in a synthetic ¹³C diamond has been performed using the Transverse Field Muon Spin Rotation method. This system could be used to verify the quantum diffusion behaviour observed before, however, with a more reliable extraction of the hopping rate. The results were obtained in an applied magnetic field of 7.5 mT and at sample temperatures of 10 K, 100 K and 200 K. The prompt fraction, f, of the μ_d state remains constant at 22(5)% in the range 10–200 K; that of the Mu _T state increases from 53(10)% at 10 K to 78(10)% at 200 K. The fractions of the two states add to 100% at 200 K, suggesting non-population of the bond-centred state, Mu_BC, which is often observed in other diamond samples. The μ_d state has a spin relaxation rate of 0.20(5) μs⁻¹, in contrast to the zero value obtained in type II diamond samples. This indicates appreciable interaction of the μ_d state with the ¹³C atoms. The Mu _T state has a large spin relaxation rate ranging from 3.0(5) μs⁻¹ at 10 K to 7.0(5) μs⁻¹ at 200 K, consistent with values obtained in diamond samples with defects. This work is part of ongoing studies of muon/muonium-defect interactions in diamonds. This revised version was published online in September 2006 with corrections to the Cover Date.     

Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon

The residual polarization of negative muons in n-type silicon with impurity density (1.6±0.2) · 10¹³ cm⁻³ is investigated as a function of temperature in the range 10–300 K. The measurements are performed in an external magnetic field of 0.08 T oriented transversely to the spin of the muons. Relaxation of the muon spin and a shift of the precession frequency are observed at temperatures below 30 K. The relaxation rate at 30 K equals 0.25±0.08 μs⁻¹. The shift of the precession frequency at 20 K equals 7 · 10⁻³. Both the relaxation rate and the shift of the precession frequency increase as the temperature decreases. At temperatures below 30 K the relaxation rate is described well by the relation Λ=bT ^−q , where q=2.8±0.2. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 7, 539–543 (10 April 1996)     

Evidence for muonium emission from an SiO2 layer on n-type Si and the positive muon state in Si

Evidence for the emission of slow muonium atoms from a 3.0-nm-thick SiO₂ layer covered on an n-type Si is reported. Also, upon applying an rf-resonance technique at the muon frequency, a time-differential observation of a delayed state-change from muonium to diamagnetic muon at room temperature was observed. Combining results obtained by use of longitudinal field decoupling and transverse spin rotation methods, the conversion rate was estimated to be 5 to 10 μs⁻¹. Both of the above results, namely the observation of the emission and state-change of muonium, suggest a process in which μ⁺ initially captures an electron from Si, then quickly converts to μ⁺ again during thermal diffusion in the Si towards the SiO₂ layer. Within the oxide layer, muonium is again formed and subsequently is emitted from the SiO₂ surface.     

Measurement of the spin-exchange and chemical ionization rate constants in collisions of polarized metastable 23 S 1 helium atoms with 32 S 1/2 sodium atoms

Experimental data on the spin-exchange rate constants for the He(2³ S ₁)-Na(3² S _1/2) system are reported for the first time. Measurements show that the spin-exchange rate constant is C _se = (23 ± 11) × 10⁻¹⁰ cm³ s⁻¹ and the chemical ionization rate constant is C _si = (29 ± 14) × 10⁻¹⁰ cm³ s⁻¹ at a temperature of 420 K. The results are compared with the data calculated from the rate constants.     

Interaction of Muons with H2/H3-Centres in Diamond

We report on transverse field muon spin rotation measurements on a nitrogen-rich type Ia diamond, both before and after the conversion of some of the aggregated nitrogen centres to nitrogen-vacancy complexes known as H2/H3-centres. The prompt fractions f and the spin relaxation rates λ were determined for the diamagnetic (μ_d) and the paramagnetic (Mu_T) states in the temperature range 10–300 K. The production of the nitrogen-vacancy complexes had little effect on the parameters of the Mu_T state for which f and λ remained unchanged at approximately 30% and 4 μs⁻¹, respectively. For the μ_d state, on the other hand, the formation of the H2/H3-centres resulted in an increase of the prompt fraction from 10(2)% to 20(3)%, and (for the first time) the spin relaxation rate showed a non-zero value of 0.020(3) μs⁻¹. These results show evidence of strong μ_d interactions with the nitrogen-vacancy complexes in diamond, and suggest a more complex structure for this state than a bare μ⁺. This revised version was published online in September 2006 with corrections to the Cover Date.     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

Spectroscopic studies of optical materials in the far infrared: The case of crystal quartz

Spectroscopic studies using far infrared reflectivity and transmissivity measurements between 10 and 600 cm⁻¹, were performed on plane parallel quartz crystal plates, in the temperature range 10–300 K. The temperature dependence of the optical mode parameters is reporeted for both polarizations parallel and perpendicular to the c-axis. The extraordinary optical constants of quartz are determined at 10 and 300 K, from the A₂ transmissivity channeled spectrum, between 10 and 300 cm⁻¹.     

Spin exchange and chemi-ionization during collisions of polarized metastable helium atoms with ground-state cesium atoms

The kinetics of the optical orientation of atoms in a helium-cesium gas-discharge plasma are considered, and kinetic equations describing the optical orientation of atoms in the case of two simultaneously occurring processes, viz., an elastic process (spin exchange) and an inelastic process (chemi-ionization), are derived. The rate constants of these processes are determined experimentally: C _se=(2.8±0.8)×10⁻⁹ cm³s⁻¹, C _ci=(1.0±0.3)×10⁻⁹ cm³s⁻¹. Zh. Tekh. Fiz. 69, 36–40 (September 1999)     

Self-diffusion of lithium,hydrogen, and oxygen ions in crystalline lithium hydroxide

The self-diffusion coefficients of ions of the three chemical elements forming lithium hydroxide have been determined by the crystal-crystal and crystal-gas isotope exchange method in the temperature range 500–720 K. Crystal samples with different isotope compositions have been grown by the Bridgman method from melts. The melting temperature is 743 ± 2 K. Original methods have been developed for high-precision measurements of the isotope ratios of all three elements, i.e., lithium (⁶Li/⁷Li), hydrogen (H/D), and oxygen (¹⁶O/¹⁸O), and their changes after diffusion annealings with the use of the same sample. The self-diffusion coefficients of lithium and hydrogen ions differ but by a factor of no more than 3–5; however, their values exceed those for oxygen by several orders of magnitude. In particular, at 670 K, they are equal to 6.0 × 10⁻⁹, 3.2 × 10⁻⁹, and 2.0 × 10⁻¹² cm² s⁻¹ for hydrogen, lithium, and oxygen, respectively. In the range 680–720 K, the self-diffusion coefficients of hydrogen and lithium increase sharply with increasing temperature to approximately 10⁻⁶ cm² s⁻¹. A probable mechanism of migration of protons and lithium ions in LiOH and the role played in this process by the oxygen ions with a lower mobility have been discussed.     

The temperature and light intensity dependence of photorefraction in LiNbO3

In the paper the dependence of the photorefraction (PhR) in LiNbO₃ and LiNbO₃−Fe (0.1 wt%, 0.3wt%) crystals on light intensity (within 10¹⁶–10²³ quanta·cm⁻²·s⁻¹ at wavelengths 496.5 nm and 600 nm) and temperature (in the region 100–500 K) is studied. For all the crystals the limiting values of PhR are similar and atT=293 K Δn _sat ^lim ≈3·10⁻³. In LiNbO₃ the temperature dependence of PhR in the range 100–500 K requires to take into account at least two trapping centres.     

Preparation and performance of a perovskite-type tubular membrane for the partial oxidation of methane

Thin-walled (∼200 μm) tubular membranes intended for the catalytic partial oxidation of natural gas have been manufactured from La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ (LSCF) powders using viscous plastic processing technology. The perovskite-type powders were synthesised using various conventional and novel techniques. The tubes have been characterised using a custom-built gas analysis rig with on-line mass spectrometry. Porosity levels of the membranes were found to be very low (<0.5%) as calculated using a mass spectrometry leakage test. This was confirmed by microstructural analysis of polished cross-sections using SEM. The spontaneous oxygen flux across the tubular membranes was determined as a function of temperature. Oxygen permeation rates were found to range from 0.1 to 0.3 μmol cm⁻²s⁻¹ at 1273 K. Paper presented at the 9th EuroConference on Ionics, Ixia, Rhodes, Greece, Sept. 15 – 21, 2002.     

Giant dielectric relaxation in SrTiO3-SrMg1/3Nb2/3O3 and SrTiO3-SrSc1/2Ta1/2O3 solid solutions

Ceramic samples of (1−x)SrTiO₃-xSrMg_1/3Nb_2/3O₃ and (1−x)SrTiO₃-xSrSc_1/2Ta_1/2O₃ were prepared, and their dielectric properties were studied at x=0.005–0.15 and 0.01–0.1, respectively, at frequencies 10 Hz–1 MHz and at temperatures 4.2–350 K. A giant dielectric relaxation was observed in the temperature range 150–300 K, and not so strong but well-developed relaxation was found in the temperature range 20–90 K. The activation energy U and the relaxation time τ₀ were determined to be 0.21–0.3 eV and from 10⁻¹¹ to 10⁻¹² s for the high-temperature relaxation and 0.01–0.02 eV and 10⁻⁸–10⁻¹⁰ s for the low-temperature relaxation, respectively. The additional local charge compensation of the heterovalent impurities Mg²⁺ and Nb⁵⁺ (or Sc³⁺ and Ta⁵⁺) by free charge carriers or the host ion vacancies is suggested to be the underlying physical mechanism of the relaxation phenomena. On the basis of this mechanism, the Maxwell-Wagner model and the model of reorienting dipole centers Mg²⁺ (or Sc³⁺) associated with the oxygen vacancy are proposed to explain the high-temperature relaxation with some arguments in favor of the latter model. The polaron-like model with the Nb⁵⁺-Ti³⁺ center is suggested as the origin of the low-temperature relaxation. The reasons for the absence of ferroelectric phase transitions in the solid solutions under study are also discussed. From Fizika Tverdogo Tela, Vol. 44, No. 11, 2002, pp. 1948–1957. Original English Text Copyright ? 2002 by Lemanov, Sotnikov, Smirnova, Weihnacht. This article was submitted by the authors in English.     

Muonium centers in heavily n‐doped Si under illumination: Evidence for Mu–hole interaction

A small fraction of implanted muons exists as a paramagnetic state (presumably Mu_BC ⁰, muonium at the Si—Si bond center) in heavily Sb‐doped Si (n-type, [Sb]\ \simeq 10¹⁸\ cm^–3). The paramagnetic state is susceptible to illumination both at 10–20 K and 290 K, providing evidence that holes (minority carriers) play an important role in determining the dynamical properties of muonium centers, where change may occur via a process Mu_BC ⁰+ h⁺\to Mu_BC ⁺ followed by charge exchange reaction (or transition Mu⁺ _BC+ e⁻→ Mu⁰ _T). This revised version was published online in August 2006 with corrections to the Cover Date.     

The superconducting properties of YBa2(Cu1−xMx)3O7 for M=Zn and Ni

Transverse and zero-field μSR measurements were made on YBa₂(Cu_1−xNi_x)₃O_7−y withx=0.1 and 0.2, and YBa₂(Cu_1−x Zn _x )₃O_7−y withx=0.03, 0.06, 0.1, and 0.16, wherey≈0.1. Since doping may lead to magnetic ordering this was searched for with both zero and transverse field μSR, but no evidence was found over the temperature range studied: 10–100 K. However, depolarization rates as functions of temperature were obtained, and the low temperature values of these are σ=3.2 μs⁻¹.1.6μs⁻¹, and 1 μs⁻¹ forx=0.01, and 0.2 Ni, respectively, and σ=0.8 μs⁻¹, 0.75 μs⁻¹, 0.65 μs⁻¹, and 0.4 μs⁻¹ forx=0.03, 0.06, 0.1, and 0.16 Zn, respectively. Estimates for the effect of decreasing electron concentration for Zn are made, but these alone do not account for the drop in σ. Estimates for the effect of scattering on λ and hence σ are made. The reduction in σ for Ni dopant is in surprisingly good agreement with these estimates. For Zn the order of magnitude is correct, but the relative lack of further change in σ after the effect of the first 0.03 addition seems to imply a saturation of the effect of scattering.