Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

Early stage spreading: Mechanisms of rapid contact line advance

Inertial spreading occurs at the onset of a droplet wetting a solid; for low viscosity, highly wetting liquids, very high contact line velocities have been observed during this regime. Initial wetting kinetics are so rapid that careful experimental exploration of this phenomenon has only occurred over the past ~ 10 years. Herein, we review recent experimental and computational investigations into inertial spreading. We highlight results and discussion from literature that bear out an initially surprising conclusion: even nanometer scale drops exhibit a regime of early stage wetting kinetics that are well described as inertia dominated. Given this, some focus is placed on reviewing results from atomic scale simulations of inertial wetting and how they can be used to battle the lack of understanding regarding fundamental mechanisms of rapid contact line advancement. To bolster this discussion, new results are also presented from molecular dynamics simulations exploring inertial wetting in metallic systems. It is demonstrated that atomic scale simulations can reveal nanoscale size effects on inertial wetting and that, after accounting for these nanoscale effects, inertial regime spreading data for nanodrops are fully explained by otherwise continuum fluid mechanics theory. Data obtained are thus used to explore the role of order in liquid films near solid surfaces in controlling contact line advancement. In exploring the structure of an ordered liquid layer adjacent to the solid surface that undergoes significant slip during inertial spreading, it is demonstrated that a tensile strain gradient manifests in the layer as the film edge is approached.     

Annealing temperature dependent catalytic water oxidation activity of iron oxyhydroxide thin films

Nanostructured iron oxyhydroxide(Fe OOH) thin films have been synthesized using an electrodeposition method on a nickel foam(NF) substrate and effect of air annealing temperature on the catalytic performance is studied. The as-deposited and annealed thin films were characterized by X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS), field emission scanning electron microscopy(FE-SEM) and linear sweep voltammetry(LSV) to determine their structural, morphological, compositional and electrochemical properties, respectively. The as-deposited nanostructured amorphous Fe OOH thin film is converted into a polycrystalline Fe_2O_3 with hematite crystal structure at a high temperature. The Fe OOH thin film acts as an efficient electrocatalyst for the oxygen evolution reaction(OER) in an alkaline 1 M KOH electrolyte. The film annealed at 200 °C shows high catalytic activity with an onset overpotential of 240 m V with a smaller Tafel slope of 48 m V/dec. Additionally, it needs an overpotential of 290 mV to the drive the current density of 10 m A/cm~2 and shows good stability in the 1 M KOH electrolyte solution.     

Preparation and characterization of antimony-doped SnO2 thin films on gold and silver substrates for electrochemical and surface plasmon resonance studies

The paper reports on the deposition of thin antimony (Sb)-doped SnO₂ films onto gold and silver substrates using magnetron sputtering. The influence of the SnO₂:Sb film on the electrochemical and surface plasmon resonance properties is investigated. The best results in terms of stability, electrochemical and plasmonic characteristics are obtained for SnO₂:Sb of 8.5 nm thickness deposited on silver substrates.     

Thickness dependent physical properties of close space evaporated In2S3 films

In recent years, In₂S₃ is considered as a promising buffer layer in the fabrication of heterojunction solar cells. Film thickness is one of the important parameters that alters the physical characteristics of the grown layers significantly. The effect of film thickness on the structural, morphological, optical and electrical properties of close space evaporated In₂S₃ layers has been studied. In₂S₃ thin films with different thicknesses in the range, 100–700 nm were deposited on Corning glass substrates at a constant substrate temperature of 300 °C. The films were polycrystalline exhibiting strong crystallographic orientation along the (103) plane. The deposited films showed mixed phases of both cubic and tetragonal structures up to a thickness of 300 nm. On further increasing the film thickness, the layers showed only tetragonal phase. With increase of film thickness, both the crystallite size and surface roughness in the films were found to be increased. The optical constants such as refractive index and extinction coefficient of the as-grown layers have been calculated from the optical transmittance data in the wavelength range, 300–2500 nm. The optical transmittance of the films was decreased from 82% to 64% and the band gap varied in the range, 2.65–2.31 eV with increase of film thickness. The electrical resistivity as well as the activation energy was evaluated and found to decrease with film thickness. The detailed study of these results was presented and discussed.     

Photolysis of methyl-parathion thin films: Products,kinetics and quantum yields under different atmospheric conditions

The present study focuses on the photodegradation of methyl-parathion thin films, an organophosphate insecticide, under different atmospheric conditions. The latter include nitrogenated, oxygenated and ozonated atmospheres, under low and high relative humidity conditions. Addition of oxygen to the atmospheric mixture did not seem to affect the reaction rates and quantum yields. Relative humidity affect was minor, with a small enhancement in reaction rate under 254 nm radiation. The addition of ozone (to either dry or humid atmosphere), at all concentrations tested, largely enhanced degradation rates. In the absence of ozone, the obtained quantum yields for photolysis of methyl-parathion thin films under 254 and 313 nm were 0.024 ± 0.007 and 0.012 ± 0.005, respectively. These values are higher than the values previously reported for solutions of methanol and water. Although the presence of molecular oxygen and water vapors did not seem to affect much the reaction rates, it did have a certain effect on the resulted products. More polar products were obtained under oxygenated and ozonated atmospheres, as well as dimers under ozone conditions. The reaction on thin films has yielded more toxic products than usually found in solutions, adding alkylphosphate esters in addition to the oxons formed normally.     

Spray deposited amorphous RuO2 for an effective use in electrochemical supercapacitor

The structural, surface morphological and optical properties of sprayed ruthenium oxide thin film were investigated using XRD, SEM and optical absorption measurements. The structural analysis from XRD pattern showed the formation of RuO₂ in amorphous phase. The scanning electron micrographs revealed network-like morphology of ruthenium oxide. The optical studies showed a direct band gap of 2.4 eV for ruthenium oxide films. Ruthenium oxide thin film exhibited a cyclic voltammogram indicative high reversibility of a typical capacitive behavior in 0.5 M H₂SO₄ electrolyte. A specific capacitance of 551 F/g was obtained with ruthenium oxide thin film (electrode) prepared by spray pyrolysis method. The specific capacitances of 551 and 450 F/g at the scan rate of 5 and 125 mV/s, respectively, indicate that the capacitance value varies inversely with scan rate.     

Development and characterization of a titanosilicate ETS-10-coated optical fiber reactor towards the photodegradation of methylene blue

An optical fiber reactor (OFR) system containing uniformly distributed quartz fibers coated with titanosilicate ETS-10 crystals was investigated. Optimum ETS-10 film thickness (～1.5 μm) and coating length (15 cm) were determined from the light propagation analysis in a single ETS-10-coated fiber. The nearly constant value of the attenuation coefficient (α ≈ 0.10 cm^?1) for films with different thickness indicated uniform fiber surface coverage with these films. The extinction coefficient, ?, decreased from ～1.6 to ～1.0 μm^?1 with ETS-10 film thickness increasing from ～0.5 to ～1.5 μm, which suggested less contact per unit film thickness between light and ETS-10 crystals inside thicker films, likely due to their lower crystal packing density. Photodegradation of methylene blue (MB) conducted in the OFR showed higher photocatalytic activity for thicker ETS-10 films. Although higher MB photodegradation rates were obtained at higher light intensity, the apparent quantum efficiency, Φ, decreased with increasing light intensity. This is consistent with the charge separation mechanism for MB photodegradation in the UV light range investigated. All ETS-10 samples investigated showed ～4–5 times higher Φ values in the OFR than in the slurry reactor, likely due to the unique light/photocatalyst/reactant contact and high fiber packing density in the OFR.     

A microporous structure of a thin film made of an ion-exchangeable layered compound

A thin film made of an ion-exchangeable layered compound, K₄Nb₆O₁₇, was prepared by a novel method. Fine particles of K₄Nb₆O₁₇ obtained by wet-grinding of the powder were coated on a substrate and calcined. Recrystallization of the fine particles at 1073 K was confirmed by XRD and SEM, and very flat and large crystals with the b-axis perpendicular to the substrate surface were obtained. The obtained thin film had a layered structure and an ion-exchange property similar to that of K₄Nb₆O₁₇ powder. The adsorption of CO was investigated for the thin film calcined at 1073 K by IR spectroscopy. The initially IR-inactive H⁺ species were suggested to be transformed into OH groups as a result of CO adsorption at the interlayer space.     

A study on solution deposited CuSCN thin films: Structural,electrochemical, optical properties

A cost-effective successive ionic layer adsorption and reaction (SILAR) method was used to deposit copper (I) thiocyanate (CuSCN) thin films on glass and steel substrates for this study. The deposited thin films were characterized for their structural, morphological, optical and electrochemical properties using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectroscopy and VersaSTAT potentiostat. A direct band gap of 3.88 eV and 3.6 eV with film thickness of 0.7 μm and 0.9 μm was obtained at 20 and 30 deposition cycles respectively. The band gap, microstrain, dislocation density and crystal size were observed to be thickness dependent. The specific capacitance of the CuSCN thin film electrode at 20 mV/s was 760 F g⁻¹ for deposition 20 cycles and 729 F g⁻¹ for deposition 30 cycles.     

XRD and AFM studies of ZnS thin films produced by electrodeposition method

The structure and morphology of ZnS thin films were investigated. ZnS thin films have been grown on an indium tin oxide glass substrate by electrodeposition method using zinc chloride and sodium thiosulfate solutions at room temperature. The X-ray diffraction patterns confirm the presence of ZnS thin films. From the AFM images, grain size decreases as the cathodic potential becomes more negative (from ?1.1 to ?1.3 V) at various deposition periods. Comparison between all the samples reveals that the intensity of the peaks increased, indicating better crystalline phase for the films deposited at ?1.1 V. These films show homogeneous and uniform distribution according to AFM images. On the other hand, XRD analysis shows that the number of ZnS peaks increased as deposition time was increased from 15 to 30 min at ?1.1 V. The AFM images show thicker films to be formed at ?1.1 V indicating more favourable condition for the formation of ZnS thin films.     

Thin wetting films from aqueous solutions of surfactants and phospholipid dispersions

The microscopic thin wetting film method was used to study the stability of wetting films from aqueous solution of surfactants and phospholipid dispersions on a solid surface. In the case of tetradecyltrimethylammonium bromide (C(14)TAB) films the experimental data for the receding contact angle, film lifetime, surface potential at the vapor/solution and solution/silica interface were used to analyze the stability of the studied films. It is shown that with increasing C(14)TAB concentration charge reversal occurs at both (vapor/solution and solution/silica) interfaces, which affects the thin-film stability. The spontaneous rupture of the thin aqueous film was interpreted in terms of the earlier proposed heterocoagulation mechanism. The presence of the mixed cationic/anionic surfactants was found to lower contact angles and suppresses the thin aqueous film rupture, thus inducing longer film lifetime, as compared to the pure amine system. In the case of mixed surfactants hetero-coagulation could arise through the formation of ionic surfactant complexes. The influence of the melting phase-transition temperature T(c) of the dimyristoylphosphatiddylcholine (DMPC) on the stability of thin films from dispersions of DMPC small unilamellar vesicles on a silica surface was studied by measuring the film lifetime and the TPC expansion rate. The stability of thin wetting films formed from dispersions of DMPC small unilamellar vesicles was investigated by the microinterferometric method. The formation of wetting films from diluted dispersions of DMPC multilamellar vesicles was studied in the temperature range 25-32 degrees C. The stability of thin film of lipid vesicles was explained on the basis of hydrophobic interactions. The results obtained show that the stability of wetting films from aqueous solutions of single cationic and mixed cationic-anionic surfactants has electrostatic origin, whereas the stability of the phospholipid film is due to hydrophobic interaction.     

Elaboration and characterization of La2NiO4+δ powders and thin films via a modified sol–gel process

Polycrystalline thin films of La₂NiO_4+δ have been synthesized on yttria stabilized zirconia (YSZ) substrates by dip-coating using a polymeric sol. Crack-free films were obtained after sintering in air at temperatures ranging from 800°C to 1000°C. The microstructure, characterized by SEM, shows the formation of dense polycrystalline films with smooth surface and mean grains size of 140 nm, for films sintered at 1000°C. A correlation between grains size and non-stoichiometry in powders have been made in our processes. The thickness, evaluated for rugosimetry measurements, is thin (80 nm) and is a function of the viscosity of the sol. The higher the thickness, the higher the viscosity. As the non-stoichiometry level is controlled by the oxygen partial pressure, an evolution of non-stoichiometry in thin film has proposed. Then, it is possible by modifying synthesis and processing parameters to prepare thin films with a controlled microstructure (thickness, porosity and non-stoichiometry).     

Role of substrate on film thickness,structural, compositional and magnetic properties of CoNi alloy thin films by low temperature electrodeposition technique

Impressment of Cobalt and Nickel based alloys in industries for the last few years attracted many researchers due to its significant features of physical, chemical and magnetic properties. The present work focused the structural, compositional, morphological and magnetic properties of Cobalt Nickel alloy thin film growth by one of the chemical methods. Thin films of Cobalt Nickel have been deposited on various substrates by means of low cost galvanostatic electrodeposition technique. Structural investigation showed that the deposited films have face centred cubic structure with orientation of crystallites along (1 1 1) plane. The structural parameters such as crystallite size, rms microstrain, dislocation density and stacking fault probability are estimated for the deposited films. Morphological features along with film composition showed that the deposited films have smooth surface with stoichiometry. Magnetic properties such as coercivity, remanence, retentivity was estimated and the results are reported.     

Anodization of Au thin film on Al in oxalic acid

An Au thin film, which was sputter-deposited on an Al substrate, was potentiostatically anodized in oxalic acid. The Au film was first anodized and a spongelike nanoporous film grew down to the interface between Au and Al. Then, the Al was anodized and a very thin and fine nanoporous alumina film was formed underneath the nanoporous Au. Under the same anodization conditions, the current density for Al was ~ 40 μA cm^− 2, less than 1% of that for Au (~ 30 mA cm^− 2). The growth rates of the nanoporous films were ~ 0.7 nm/min for Al and 26 nm/min for Au, indicating that the growth rate of nanoporous alumina was less than 3% of that of nanoporous Au. Al is suitable as the substrate for preparing nanoporous Au films because the electrochemical reactions of both the electrolyte and the substrate are significantly suppressed when the nanopores penetrate Au and the electrolyte reaches the substrate.     

High-capacity LiV3O8 thin-film cathode with a mixed amorphous–nanocrystalline microstructure prepared by RF magnetron sputtering

LiV₃O₈ thin films with a mixed amorphous–nanocrystalline microstructure were deposited on stainless steel substrates using radio-frequency (RF) magnetron sputtering for the first time. The films exhibited good performance as a cathode material for lithium ion batteries. Results indicate that the film electrodes had a smooth surface and consisted mainly of an amorphous structure containing nanocrystalline zones dispersed within it. Depending on its microstructure, the films delivered an initial discharge capacity as high as 382 mAh/g and exhibited good capacity retention, with discharge capacity of 301 mAh/g after 100 cycles representing a loss rate of 0.21% per cycle.     

Textured films of chromium phosphate synthesized by low-temperature vapor diffusion catalysis

The application of kinetically controlled vapor diffusion catalysis to the synthesis of films of chromium phosphate produces a novel, nanostructured film morphology. The resulting material consists of a thin, flat backplane (3 μm thick) with needles of CrPO₄·6H₂O projecting from one surface of the film. The reaction process occurs at low temperature (25 °C) and mild pH.     

Evolution of microstructure and crack pattern in NiO thin films under 200 MeV Au ion irradiation

NiO thin films grown on Si (100) substrate by electron beam evaporation method and sintered at 700 °C were irradiated with 200 MeV Au¹⁵⁺ ions. The fcc structure of the sintered films was retained up to the highest fluence (1×10¹³ ions cm^?2) of irradiation. However the microstructure of the pristine film underwent a considerable modification with increasing ion fluence. 200 MeV Au ion irradiation led to compressive stress generation in NiO medium. The diameter of the stressed region created by 200 MeV Au ions along the ion path was estimated from the variation of stress with ion fluence and found to be ～11.6 nm. The film surface started cracking when irradiated at and above the fluence of 3×10¹² ions cm^?2. Ratio of the fractal dimension of the cracked surface obtained at 200 MeV and 120 MeV (Mallick et al., 2010a) Au ions was compared with the ratio of the radii of ion tracks calculated based on Coulomb explosion and thermal spike models. This comparison indicated applicability of thermal spike model for crack formation.     

XPS/EXAFS study of cycleability improved LiMn2O4 thin film cathodes prepared by solution deposition

The influence of Sn substitution in LiMn₂O₄ thin films as a cathode has been studied via solution deposition to improve the electrochemical performance of thin film lithium batteries. LiSn_0.025Mn_1.95O₄ thin films showed the most promising performance, i.e. a high capacity retention of 77% at 10 C after the 500th cycle, due to the increased average Mn valence state. The thin films of LiSn_x/2Mn_2?xO₄ (x ? 0.10) showed significant precipitation of SnO₂ and SnO after the cycling evaluation.     

Titanium vanadium nitride electrode for micro-supercapacitors

Here we report on the synthesis of binary transition metal nitride electrodes based on titanium vanadium nitride (TiVN) thin films. These films were deposited by a method compatible with micro-electronic processes which consists of DC co-sputtering of vanadium (V) and titanium (Ti) targets. TiVN films with different Ti/V ratio were deposited. A dependence of the capacitance and the cycling stability with the Ti/V atomic ratio in the films was established. While V rich sample exhibits a Faradic behavior that limits its cycling ability despite a high areal and volumetric capacity, the addition of Ti in the film drastically improves the cycling ability with virtually no fade in capacitance after 10,000 cycles. Furthermore, a 1.1 Ti/V ratio leads to an areal capacitance up to 15 mF·cm^− 2 in 1 M KOH electrolyte solution. Such electrodes shed light on the use of binary transition metal nitrides as candidate electrodes for micro-supercapacitor.