Effect of Mg2+ on the Magnetic Compensation of Lithium–Chromium Ferrite

PAC measurements on ¹¹¹In(¹¹¹Cd) implanted and thermally treated α-Fe have shown an indication for a cubic defect with the ¹¹¹Cd probe in the centre of it. The measured room temperature (R. T.) magnetic hyperfine fields are B _hf1 = −38.4(8) T for substitution and B _hf2 = +11.5(3) T for the cubic defect. Additionally, probes with pure quadrupole frequency distributions were observed, which are incorporated in surface contaminations.     

Accounting for the energies and entropies of kinesin’s catalytic cycle

When the processive motor protein kinesin walks along the biopolymer microtubule it can occasionally make a backward step. Recent single molecule experiments on moving kinesin have revealed that the forward-to-backward step ratio decreases exponentially with the load force. Carter and Cross (Nature 435, 308-312, 2005) found that this ratio tightly followed 802 × exp[−0.95F], where F is the load force in piconewtons. A straightforward analysis of a Brownian step leads to L/(2k _B T) as the factor in front of the load force, where L is the 8 nm stepsize, k _B is the Boltzmann constant, and T is the temperature. The factor L/(2k _B T) does indeed equal 0.95 pN⁻¹. The same analysis shows how the 802 prefactor derives from the power stroke energy G as exp[G/(2k _B T)]. There are indications that the power stroke derives from the entropically driven coiling of the 30 amino acid neck linker that connects the two kinesin heads. This idea is examined and consequences are deduced.     

Unoccupied surface states on the (111) surface of silver: Evidence for broadening

We have studied Ag(111) withk-resolved inverse photoemission spectroscopy athv=9.7 eV. In normal incidence we find image-state emission atE _vac–(0.4±0.1) eV and the unoccupied part of an intrinsic surface-state band as a huge emission peak cut byE _F. The energy dispersion of the intrinsic surface-state band and in particular its crossing ofE _F predicted by Ho et al. cannot be observed because of broadening effects as is shown by a theoretical simulation. The broadening is due to the vicinity of the surface state to the bulk continuum nearE _F as suggested by Kevan.     

EDXRF measurements on gold diffusion-doped Bi1.8Pb0.35Sr1.9Ca2.1Cu3Oy

Gold (Au) diffusion in superconducting Bi_1.8Pb_0.35Sr_1.9Ca_2.1Cu₃O_y was investigated over the temperature range 500-800 °C by the energy dispersive X-ray fluorescence (EDXRF) technique. It is found that the Au diffusion coefficient decreases as the diffusion-annealing temperature decreases. The temperature dependences of Au diffusion coefficient in grains and over grain boundaries are described by the relations D₁=6.7×10⁻⁵exp(−1.19 eV/k_BT) and D₂=9.7×10⁻⁴exp(−1.09 eV/k_BT), respectively. The diffusion doping of Bi-2223 by Au causes a significant increase of the lattice parameter c by about 0.19%. For the Au-diffused samples, dc electrical resistivity and transport critical current density measurements indicated the critical transition temperature increased from 100 to 104 K and the critical current density increased from 40 to 125 A cm⁻², in comparison with those of undoped samples. From scanning electron microscope (SEM) and X-ray diffraction (XRD) measurements it is observed that Au doping of the sample also improved the surface morphology and increased the ratio of the high-T_c phase to the low-T_c phase. The possible reasons for the observed improvement in microstructure and superconducting properties of the samples due to Au diffusion are also discussed.     

Dielectric relaxation and computer simulation studies of rutile-structured MnF2 crystals

The fluorides of the rutile structure are relatively simple ionic materials with tetragonal symmetry for which the dominant intrinsic defect has not been established. The present experiments involve low-temperature dielectric relaxation measurements on Er³⁺-and Y³⁺-doped MnF₂ single crystals. Unexpectedly, dielectric loss peaks were observed at cryogenic temperatures, involving very low activation energies,E. For both dopants a prominent peak is observed for samples oriented parallel to thec-axis withE 6 meV and in perpendicular orientations withE=37 meV for Er³⁺ and 46 meV for Y³⁺ doping. Such lowE-values are probably too small to be controlled by lattice migration of a defect. Rather, we expect that they are due to a very low symmetry configuration created when the ions near the defect move off symmetry to a more stable configuration. Computer simulation calculations have been carried out which are much improved over early studies of this system in terms of the code used and the F-F interatomic potentials. The results show that the energy per defect for the anion Frenkel (1.53 eV) is lower than that of the Schottky (1.99 eV). It was also shown that the fluorine interstitial, F_i, adopts a split-interstitial form. This defect associates strongly with trivalent dopants Er and Y to produce a low symmetry dipolar structure with the necessary off-symmetry configuration to explain the experimental findings. Since there is no alternative way to explain these low temperature relaxations in terms of impurities associated with Mn vacancies, as would be required by the Schottky model, we conclude that these experiments serve to establish the nature of the intrinsic defect in MnF₂ as anion Frenkel.     

Defect parameters for strontium fluoride

The ionic conductivity of dilute Sr₁?xYb_xF₂+x solid solutions has been studied as a function of temperature. For the migration enthalpy of fluoride interstitials the value 0.946 eV is obtained, and the value 0.56 eV for the dissociation enthalpy of neutral associates (Yb_SrF_i)^x. The latter value is concordant with the theoretical binding energy for this type of associate. A re-analysis of the conductivity data for SrF₂ leads to the value 2.70 eV for intrinsic defect formation, contrary to reported values which range from 2.2 to 2.3 eV.     

Diffusion activation energy versus the favourable energy in two-order-parameter model:A molecular dynamics study of liquid Al

In the present work, we find that both diffusion activation energy E_a(D) and E_a(S^ex) increase linearly with pressure and have the same slope (0.022±0.001 eV/GPa) for liquid Al. The temperature and pressure dependence of excess entropy is well fitted by the expression -S^ex(T,P)/k_B=a(P)+b(P)T+c(P)exp(E_f/k_BT), which together with the small ratio of E_f/k_BT leads to the relationship of excess entropy to temperature and pressure, i.e. S^ex≈-cE_f/T, where c is about 12 and E_f (=Δ E-PΔV) is the favourable energy. Therefore, there exists a simple relation between E_a(S^ex) and E_f, i.e. E_a(S^ex)≈cE_f.     

Dimple‐assisted dewetting: heterogeneous nucleation in undercooled wetting films

Undercooled wetting films near a first‐order wetting transition exhibit an unusually long lifetime: the thermal nucleation barrier for formation of a critical hole in a film of thickness F diverges according to Γ ∼ exp (ℰ_c/k_BT) where the excess free energy ℰ_c ∼ F^ζ with ζ ≥ 2. Localized perturbations of the liquid‐vapor interface (‘dimples’) are shown to be a useful tool in reducing Γ in a controlled way: they act as heterogeneous nucleation centers for thermal critical nuclei. For ⁴He wetting films on weak‐binding alkali substrates (Cs, Rb) dimples can be generated either by vortices in a superfluid film or by surface electrons. The theory of the heterogeneous nucleation process initiated by the presence of surface dimples (‘dimple‐assisted dewetting’) is developed, accompanied by quantitative predictions for experiment.     

Sondenmessung der Plasmaparameter und deren Fluktuation in Argon-Niederdruck-Schwachstrom-Säulen im transversalen Magnetfeld

This paper reports on measurements of probe noise and double probe characteristics in argon-low-pressure low-current discharges under the influence of a local transversal magnetic field. Above a critical value of magnetic field intensity B_c there are no moving striations but partially correlated fluctuations. The space distribution of probe noise (ion saturation current and floating potential) and the measured values of electron temperature and density are discussed. At B_c a characteristic value of electron temperature T_e,c ≈ 1,4 eV independent of filling pressure has been found. A first opinion on the character of the fluctuations is given.     

An investigation of the adsorption of oxygen and oxygen containing species on platinum by photoelectron spectroscopy

It is shown that XPS can detect 0.01 monolayers of adsorbed carbon or oxygen and can identify the chemical state of the adsorbed atom(s). Two states of adsorbed oxygen were resolved by thermal desorption spectroscopy and by XPS. The O 1s binding energies (^FE_B) were 530.2 and 533 eV below the platinum Fermi level for the strongly and weakly adsorbed states respectively. (^FE_B) did not vary with coverage. The resulting apparent variation of (^VE_B), the vacuum level referenced value, is discussed in terms of a simple model for the work function Φ which was measured in situ. UPS indicated that the weakly adsorbed state is probably molecular, with levels at 6.1, 9.3, 10.4 and l2.4 eV below the Fermi level. The main change in the UPS spectra produced by the strongly adsorbed state was a reduction of a peak close to the Fermi level.     

Photoluminescence spectroscopy of defects in ZnO nano/microwires

Photoluminescence spectroscopy is used to study defects found in single ZnO nano/microwires at 90 K. The defect, acting as binding site for bound exciton (BX) transition, is represented by BF, the fractional intensity of the BX peak in the whole near-band edge ultraviolet (UV) luminescence. The concentration of defects as origins of the visible emissions is proportional to the intensity fraction DF, i.e., the intensity fraction of visible emissions in the sum total of all UV and visible luminescences. By comparing BF and DF, it is concluded that the two defects are not correlated to each other. The former kind of defect is considered to be related to the blueshift of the near-band edge peak as the radius of the nano/microwires decreases at room temperature.     

ac anddc electroluminescence in CaS:Cu,Sm phosphors

Theac anddc electroluminescence in CaS:Cu, Sm have been investigated. The luminescence spectra show three peaks in the visible region. The brightness-voltage dependence satisfies the relationB=B ₀ exp (−b/V ^1/2) with two modes of variation. The nature of this dependence indc andac at different frequencies is discussed. The electroluminescence brightness also depends on the temperature of the phosphors and shows a peak around 80.0;C. The electroluminescence efficiency increases with applied voltage up to 2200 V and this dependence on V is explained on the basis of a transport process of the Schottky emission type.     

Lattice defects of V3Si single crystals studied by positron annihilation

The sensitivity of positrons to point defects created by the irradiation of V₃Si with neutrons is demonstrated. We found no indication of thermal vacancies by thermal equilibrium measurement up to 1273 K which indicates that the monovacancy formation enthalpy for V₃Si isH _1V ^F ≧(1.84±0.14) eV. Investigations within the range of homogeneity for excess vanadium suppot the idea that substitutional defects are the dominating defect type, whereas for excess silicon a direct confirmation of existing structural vacancies as the dominating defect type is given.     

Perturbed Angular Correlation Study of Magnetic and Electric Hyperfine Interactions at 111Cd in GdNi2 and SmNi2

The magnetic hyperfine field B _hf of the closed-shell probe nucleus ¹¹¹Cd in the C15 Laves phase RNi₂ (R= Gd, Sm) has been investigated as a function of temperature by perturbed angular correlation (PAC) spectroscopy. The saturation magnetic hyperfine fields at 10 K are B _hf=7.7(2) and 3.9(1) T for GdNi₂ and SmNi₂, respectively. Although the probe nucleus resides on the cubic rare-earth site, a strong axially symmetric electric quadrupole interaction (QI) is observed in the paramagnetic phase at T300 K. The possible relation of this unexpected QI to the structural instability of RNi₂ is discussed.     

High‐temperature stability of Au/p‐type diamond Schottky diode

Rectification properties of Au Schottky diodes were investigated in high‐temperature operation. These diodes were fabricated on a p‐type diamond single crystal using the vacuum‐ultraviolet light/ozone treatment. The ideality factor n of the Schottky diodes decreased monotonically with increasing measurement temperature whereas the Schottky barrier height ?_b increased, and ?_b reached 2.6 eV at 550 K with n of 1.1. Through high temperature heating at 870 K, the mean value of ?_b at 300 K changed permanently from 2.2 eV to 1.1 eV. Decrease of ?_b might originate from a dissolution of oxygen termination at the Au/diamond interface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*

A defect specific analysis technique is introduced that combines the high concentration sensitivity of deep level transient spectroscopy (DLTS) with the radioactive transmutation of probe atoms; this technique results in the chemical identification of particular atoms which participate in the observed defect centres. The method is demonstrated for n- and p-type silicon samples, which are implanted with radioactive ¹¹¹In* ions. The activity of the indium ions decreases with half-life T _1/2 of 2.83 d by a decay into stable cadmium ions. A series of Cd-related levels whose concentrations increase exponentially with the decay time of ¹¹¹In* are identified in the DLTS spectra. Cd-diffused silicon samples are investigated for comparison; these samples reveal similar DLTS spectra. The analysis method described can be extended to all semiconductors and to a variety of radioactive probe atoms.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Point defects related to 260 K thermostimulated luminescence in α-Al2O3

Abstract

Thermo- and photostimulated processes are studied in reduced hydrogen containing α-Al₂O₃ excited by UV light. It is found that UV excitation in F absorption band at 90 K results in a ionization of the F-centers and capture of released electrons at defects thus producing an anisotropy absorption band at 4.2 eV and the dominant thermoluminescence (TL) peak at 260 K. The 260 K TSL peak is accompanied by complete bleaching of the 4.2 eV absorption band and vice versa—by light stimulation in the region of the 4.2 eV band the 260 K TSL peak disappear and released electrons recombine with F⁺-centers. Both the effect of the preliminary high-temperature thermal treatment of samples on formation of 4.2 eV-centers and the observed dichroism characteristics allows to conclude that corresponding complex defect contains hydrogen and can involve vacancy pair.     

Isothermal depolarization currents in triglycine sulphate

5 s; the polarizing field was varied from 10 V/cm to 10 kV/cm, and the temperature between -190 °C and 25 °C. The results confirm that the depolarization current in TGS follows the formula I_d∼[(ω_pt)ⁿ+(ω_pt)^m]^-1, where n<1 and m>1. The values of the parameters n and m depend on both the electric field strength and the polarization time as well as on the temperature of the experiment. The loss peak frequency ω_p exhibits activation character: ω_p∼exp(-E/k_BT) with E=0.34 eV at temperatures directly below room temperature and E=0.013 eV in the range of liquid nitrogen temperatures. Received: 1 April 1997/Accepted: 7 April 1997     

The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range 60-300 K. The room temperature values for the zero bias barrier height from the I-V measurements (Φ_I-V) was found to be 0.52 eV and from the C-V measurements (Φ_C-V) as 3.83 eV. From the temperature dependence of forward bias I-V, the barrier height was observed to increase with temperature, a trend that disagrees with the negative temperature coefficient for semiconductor material. The C-V barrier height decreases with temperature, a trend that is in agreement with the negative temperature coefficient of semiconductor material. This has enabled us to fit two curves in two regions (60-120 K and 140-300 K). We have attributed this behaviour to a defect observed by DLTS with energy level 0.31 eV below the conduction band and defect concentration of between 4×10¹⁶ and 6×10¹⁶ cm⁻³ that traps carriers, influencing the determination of the barrier height.     

Photoemission study of electronic structure evolution across the metal-insulator transition of heavily B-doped diamond

We studied the electronic structure evolution of heavily B-doped diamond films across the metal-insulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From high-temperature UPS, through which electronic states near the Fermi level (E_F) up to ∼5k_BT can be observed (k_B is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near E_F. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of E_F, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.