Near-Field Scanning Optical Microscopy Combined with a Tapping Mode Atomic Force Microscope

Tapping mode atomic force microscopy is used to control the tip-sample distance in near field scanning optical microscopy (NSOM), which gives both topographic and near-field images simultaneously. The evanescent waves are scattered by a vibrating silicon-nitride tip in the proximity of sample surfaces and are detected through a microscope objective. This NSOM allows the observation of opaque samples with reflection illumination. A glass grating of 1-μm pitch and an InP grating of 0.5-μm pitch are observed with a lateral resolution of 100 nm.Presented at 1996 International Workshop on Interferometry (IWI ‘96), August 27-29, Saitama, Japan     

IR-induced nonlinear optics in Ge-doped Bi12TiO20 large-sized nanocrystallites

Photoinduced non-linear optical effects in large-sized (up to 25 nm) nanocrystallites (NC) of Ge-doped Bi₁₂TiO₂₀ (BTO:Ge) incorporated within olygoether photopolymer matrix have been studied. Photoinduced second harmonic generation (PISHG) was measured. Nd:YAG pulsed laser (λ=1.06 μm) was used as a source of photoinducing light. As a fundamental light source for the SHG and two-photon absorption, Er:LiYF₄ laser (λ=2.065 μm) was used. We have found that with increasing IR pump power density, the output doubled frequency SHG signal (λ=1.03 μm) increases and achieves its maximum value at the pump power density about 0.45 GW/cm² and NC size about 12 nm.The values of second-order optical susceptibilities were almost 20% larger than for the pure BTO NC single crystals. With decreasing temperature below 60 K, the SHG signal increases achieving maximal value at LHeT.     

A new method for increasing the laser damage threshold of metal mirrors

In order to increase the damage threshold of metal mirrors we propose to create a special structure on the surface of the mirrors (“photonic surface”). This structure must have the period about λ/2 and will suppress propagation of surface plasmons with the frequency ω₀=2πc/λ along the surface. This structure will also slightly increase the heat removal from the mirror’s surface by the excitation of the thermostimulated plasmon emission from the surface. The heat removal from the surface is estimated and possible implementation of this approach for use with CO₂-lasers (λ=10.6 μm) and Nd-YAG-lasers (λ=1.06 μm) is analyzed.     

Preparation and characterization of ZnO thin films prepared by thermal oxidation of evaporated Zn thin films

In this paper, the experimental results regarding some structural, electrical and optical properties of ZnO thin films prepared by thermal oxidation of metallic Zn thin films are presented.Zn thin films (d=200–400 nm) were deposited by thermal evaporation under vacuum, onto unheated glass substrates, using the quasi-closed volume technique. In order to obtain ZnO films, zinc-coated glass substrates were isochronally heated in air in the 300–660 K temperature range, for thermal oxidation.X-ray diffraction (XRD) studies revealed that the ZnO films obtained present a randomly oriented hexagonal nanocrystalline structure. Depending on the heating temperature of the Zn films, the optical transmittance of the ZnO films in the visible wavelength range varied from 85% to 95%. The optical band gap of the ZnO films was found to be about 3.2 eV. By in situ studying of the temperature dependence of the electrical conductivity during the oxidation process, the value of about 2×10⁻² Ω⁻¹ m⁻¹ was found for the conductivity of completely oxidized ZnO films.     

High-resolution capability of optical near-field imprint lithography

We propose a novel method to increase the resolution of imprint lithography by introducing strong localization of the optical near-field intensity, depending on the mold structure. By optimizing the thickness of the metallic film on a SiO₂ line-and-space (LS) mold without a sidewall coating, we confirmed that the optical near-field strongly localizes at the edge of the mold, using a finite-difference time-domain calculation method. Based on the calculated results, we performed optical near-field imprint lithography using a mold with metallized (20-nm-thick Al without a sidewall coating) SiO₂ LS with a 300-nm half-pitch that was 200-nm deep with illumination using the g-line (λ=436 nm), and obtained features as narrow as 50 nm wide. PACS 81.16.Nd; 81.16.Rf     

Design and Fabrication of Microlens Array for Near-Field Vertical Cavity Surface Emitting Laser Parallel Optical Head

A GaP microlens for collecting laser light was developed in the tip of a near-field probe. It is important to realize a near-field optical probe head with high throughput and a small spot size. The design and fabrication results of the GaP microlens array are described. The most suitable GaP microlens with a probe was calculated as having a 10 μm radius using the two-dimensional finite difference time domain (2-D FDTD) method. The full width half maximum (FWHM) spot size variation and optical power density tolerance were calculated as 157 nm ± 5 nm and 7%, respectively. A spherical GaP microlens was fabricated with a radius of 10 μm by controlling the Cl₂/Ar gas mixture ratio. The difference between the theoretical spherical shape and the fabricated GaP microlens was evaluated as 40 nm at peak to valley. The FWHM spot size and optical throughput of the fabricated microlens were measured as 520 nm and 63%, respectively. The microlens was the same as a theoretical lens with a 10 μm radius. The micron-lens array fabrication process for a near-field optical head was demonstrated in this experiment.     

Study of optical and magneto-optical properties of CoFe–HfO2 granular magnetic films

Granular films of composition (CoFe)_x(HfO₂)_1−x with continuous variation of the Co_0.5Fe_0.5 volume fraction in the range 0.1<x<0.9 have been prepared by e-beam co-evaporation. The optical properties of the thin granular composite films have been determined from transmission and reflection spectra in the 300–1100 nm region. The optical characteristics of the granular films as a function of x were also determined by the ellipsometrical method at λ=632.8 nm. We find that the transmission and reflection spectra and the dielectrical function have anomalies near the percolation threshold at x_p≈0.45. The Faraday rotation in the films was determined at λ=632.8 nm. The spectral dispersion of Faraday effects have peak in the region of the plasmon frequency. The Faraday effect is greatly enhanced near x_p. The calculated optical and magneto-optical parameters, described in the framework of the effective medium approximation, are in qualitative agreement with experimental data.     

Angular distribution of intensity of reflected radiation investigations of the influence of CO2 laser treatment on optical properties of hydrogenated amorphous silicon

Thin films of hydrogenated amorphous silicon (a-Si:H) were annealed using CO₂ laser radiation (λ=10.6 μm). Changes of optical properties of the treated a-Si:H were investigated using optical transmittance spectroscopy and the angular distribution of intensity of reflected radiation (ADIRR). The CO₂ laser annealing influences the spectral characteristics of the real part of refractive index n and absorption coefficient α of light in a-Si:H. This treatment increases the n and α values as well as the Urbach energy of a-Si:H. Simultaneously it decreases the optical energy gap of this material. The changes of optical parameters at the interfaces of a-Si:H–glass substrate and a-Si:H–air were established.     

Super-transmission of light through subwavelength annular aperture arrays in metallic films: Spectral analysis and near-field optical images in the visible range

This paper presents experimental studies of the enhanced light transmission through metallic films pierced by subwavelength annular apertures. Two different methods (e-beam lithography and focused ion beam) have been used to build the nano-structures. We have experimentally recorded their far-field spectral response in the visible range and the optical near-field above the nano-structures when they are excited at 633 nm. The spectral response exhibits a transmission peak at 700 nm with maximum efficiency around 16%. The near-field exhibits a characteristic two-lobe structure just above the aperture. Finite difference time domain (FDTD) simulations reproduce quite well the experimental results.     

Epitaxial growth of ZnSiN2 single-crystalline films on sapphire substrates

A new family of wide band gap nitride semiconductors expressed as II–IV-N₂ have recently attracted attention due to their expected properties such as optical non-linearity. In addition, among these compounds, ZnGeN₂ and ZnSiN₂ have lattice parameters close to GaN and SiC respectively. Up to now, there is very little work reported on this class of materials and no systematic thin film growth study has been reported to date. In this paper we present the first study on the growth of ZnSiN₂ on c-sapphire and (100) silicon substrates using low pressure MOVPE technique. Triethylamine:dimethylzinc adduct, silane diluted in H₂ and ammonia were used as source materials. Single crystalline epitaxial ZnSiN₂ layers were obtained on nitridated c-sapphire substrates in the temperature range 873–973 K by using an adapted II/IV molar ratio ranging from 1.2 to 12. Assuming an orthorhombic unit cell, the lattice parameters calculated from the X-ray diffraction data are a=0.534 nm, b=0.617 nm and c=0.504 nm.     

UP-conversion of terahertz radiation induced by photon drag effect

An all-optical approach to convert terahertz radiation (THz, wavelength λ₁) into infrared (IR, peak wavelength λ₂) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm²) show that this up-conversion process (with λ₁/λ₂>10²) can be observed with a conventional thermal imaging camera.     

Measurements and inverse calculations of spectral radiation intensities of a turbulent ethylene/air jet flame

Fast (6250 Hz) line-of-sight measurements of infrared spectral radiation intensities (I_λ) from a luminous flame and a new deconvolution technique for the estimate of local scalar properties using inverse radiation calculations are reported. Time series data of I_λ for one diametric and nine chord-like radiation paths in a representative horizontal plane were measured. Statistical properties of I_λ, including mean, root mean square (rms), probability density function, autocorrelation coefficient, and power spectral density, were obtained from the time series data. The measured statistical properties of I_λ at two representative wavelengths, which are dominated by carbon dioxide (CO₂) and soot radiation, respectively, are reported. The autocorrelation coefficient data show large negative loops with repeatable zero crossings at 20 ms and minimum values as low as −0.2 at 30–40 ms. Radial distributions of mean and rms CO₂ mole fractions and temperatures were estimated using inverse calculations of mean I_λ at two different wavelengths dominated by CO₂ radiation in conjunction with the relationship of these quantities to mixture fractions. Soot volume fraction distributions were also estimated using inverse calculations of mean I_λ at a wavelength dominated by continuum soot radiation. The estimated local mixture fraction distributions were in reasonably good agreement with sampling data from similar flames. The calculated mean I_λ from 1.4 to 4.8 μm other than those used in the inverse calculations matched the experimental data well. The present method provides non-intrusive measurements of major gas species and temperature statistics in turbulent soot containing flames not accessible to other optical diagnostics.     

FABRICATION AND APPLICATION OF NEAR-FIELD OPTICAL FIBRE PROBE

In this paper, the fabrication of a large cone angle near-field optical fibre probe, using the two-step chemical etching method and bent probe, is introduced, and the controlling parameters of the coated Cr－Al film at the probe tip are presented. The scanning electron microscopy images display that the tip diameter of the uncoated large cone angle fibre probe obtained is less than 50nm, the cone angle over 90°, and the diameter of light aperture at the coated probe tip is less than 100nm. The measured results of the optical transmission efficiency for various probe tips show that the uncoated straight optical fibre probe, film-coated straight probe and film-coated bent probe are 3×10^-1, 2×10^-3, and 1×10^-4 times that of the flat fibre probe, respectively. In addition, the force images and near-field optical images of a standard sample are acquired using a large cone angle and film-coated bent probe.     

Macroscopic and microscopic parameters of laser dye solvents: m-xylene and dioxane

For the laser designer and other users the optical, electrical and refractive parameters have been obtained for pure nonpolar laser dye solvents m-xylene and dioxane. The refractive index (n) and its thermo-optic constant (dn/dT) at argon laser wavelength 514.5 nm and He–Ne laser wavelength 632.8 nm, are measured. The values of n and dn/dT are used to calculate the optical permittivity ε=n² and its variation with temperature dε/dT. Applying Cauchy's equation the optical and dielectric dispersion (dn/dλ and dε/dλ) are determined. The variation of −dn/dT, −dε/dT, molar refractivity and thermal volume expansion coefficient as a function of wavelength are calculated and represented. Furthermore Cauchy's constants A and B as a function of temperature are plotted. The specific and molar refractivities, specific and molar dispersivity total polarizability, distortion polarizability, ratio of atomic to electronic polarizability, molecular radius, relaxation time, electric susceptibility characteristic impedance, and other physical parameters were calculated. Additionally, density, thermal linear expansion coefficient and molar polarization as a function of temperature were calculated at the laser wavelengths 514.5 nm.     

A DFG spectrometer at 3 μm for high resolution molecular spectroscopy and trace gas detection

We report the realization and characterization of a spectrometer based on difference frequency generation using a periodically poled lithium niobate crystal. As signal and pump lasers we used a diode-pumped Nd–YAG laser (λ=1.064 μm) and an extended cavity semiconductor diode laser (λ=0.785 μm), respectively. The mid-infrared coherent radiation was produced at 3 μm with a maximum power of about 160 nW obtained with 340 mW of signal and only 3.4 mW of pump. That corresponds to an efficiency of 0.01%/Wcm, which is in good agreement with other data available in literature. The generated radiation around 3 μm has allowed us to study fundamental absorption bands of molecules of great atmospheric and physical interest such as water vapor and the hydroxyl free radical. In this work we report preliminary spectroscopic results concerning the ν₁ 5₄₁→6₅₂ H₂O line at 2.968 μm. In particular, for this line we provide the first experimental estimation of self-, N₂- and O₂-broadening coefficients.     

Photoinduced non-linear optical diagnostic of SiNxOy/Si111 interfaces

Anisotropic (elliptically polarized) photoinduced second harmonic generation (PISHG) in SiN_xO_y/Si1 1 1 films was proposed for contact-less monitoring of specimens with different nitrogen to oxygen (N/O) ratios. As a source for the photoinducing light, we used a nitrogen Q-switched pulse laser at wavelengths of 315, 337 and 354 nm as well as doubled frequency YAG–Nd laser wavelength (λ=530 nm). The YAG : Nd pulse laser (λ=1.06 μm; W=30 MW; τ=10–50 ps) was used to measure the PISHG. All measurements were done in a reflected light regime. We found that the output PISHG signal was sensitive to the N/O ratio and the film thickness. Measurements of the PISHG versus pumping wavelengths, powers, incident angles as well as independent measurements of the DC-electric field induced second harmonic generation indicate the major role played in this process by axially symmetric photoexcited electron–phonon states. The SiN_xO_y films were synthesized using a technique of chemical evaporation at low pressures. Films with thickness varying between 10 and 30 nm and with an N/O ratio between 0 and 1 were obtained. Electrostatic potential distribution at the Si1 1 1–SiN_xO_y interfaces was calculated. Comparison of the experimentally obtained and quantum chemically calculated PISHG data are presented. High sensitivity of anisotropic PISHG to the N/O ratio and film thickness is revealed. The role of the electron–phonon interactions in the dependencies observed is discussed. We have shown that the PISHG method has higher sensitivity than the traditional extended X-ray absorption fine structure spectroscopic and linear optical method for films with the N/O ratio higher than 0.50.     

Holographic cure monitoring of the DuPont Somos 7100 stereolithography resin

The optical characteristics of a commercial UV curable resin are investigated using non-degenerate four-wave mixing. The material assessed is an epoxy resin, DuPont Somos^TM 7100. The holographic gratings were written at a wavelength of λ=351.1 nm for an irradiance range 0.5–3.0 W/cm² and read at λ=632.8 nm in order to assess the reactivity, curing speed, shrinkage and resolution of the resin.     

The influence of polychromic light on the surface of MDI based polyurethane elastomer

A polyurethane elastomer was synthesized starting from 4,4′ diphenylmethane diisocyanate and poly(ethyleneadipate)diol. Butylene glycol was used as chain extender. Surface properties after photo-degradation of the elastomer under the action of the radiation with λ > 300 nm was monitored by FT-IR spectroscopy and contact angle measurements. The quality of polymer surface was observed under optical microscope. The formation of photo-Fries rearrangement and Norrish II reaction products during irradiation was associated with the gloss loss (from 100% for non-irradiated sample to 27% after 200 h irradiation time) and modification of wettability. There were also found significant modifications with irradiation time of both the glass transition temperature (T_g decreases from 64 °C for non-irradiated sample to 53 °C after 200 h irradiation) and the swelling coefficient (an increase from 1.2% up to 2.5% is observed after 200 h irradiation).     

UV-induced two-photon absorption in BiB3O6 single crystals

We show that BiB₃O₆ (BiBO) crystals, well known for their excellent second harmonic generation (SHG) properties, may also be of interest for third-order optical phenomena, particularly for two-photon absorption (TPA). Photoinduced TPA measurements were performed under illumination of excimer Xe–F laser (λ = 217 nm) as a photoinducing (pumping) beam. It created a thin surface layer (about 85 nm) that was a source of the observed photoinduced TPA. Raman shifted Nd-YAG laser radiation (λ = 1.9 μm) as well as its second and fourth harmonics (λ = 950 and λ = 475 nm, respectively) were used as fundamental (probing) beams of the TPA. The highest values of the TPA β coefficient were achieved for a polarization of the pumping light directed along crystallographic axis b. Quantum chemical simulations indicate on substantial contribution of UV-induced electron–phonon anharmonicity to the observed TPA. The obtained values of TPA coefficients indicate a possibility of using BiBO crystals as UV-operated optical limiters in a wide spectral range.     

Near-field time-resolved fluorescence studies of poly(phenylmethyl silane) with subwavelength resolution

We present an example of the first time-correlated single-photon counting (TCSPC) near-field optical measurement. The aperture size of our prepared aluminun-coated fiber-optic probe was approximately 50 nm, which represents a spatial resolution of _ex/7 for our UV measurements. Near-field fluorescence decays of poly(phenylmethyl silane) in solid thin films excited in the range 325–360 nm were obtained and the steady-state excitation spectra compared with the excitation spectral information obtained in the far field. Fluorescence decays showed single exponential lifetimes ranging from 45 to 277 ps, which was dependent on the excitation wavelength and the selected near-field tip. The proximity of the metal-coated tip to the sample may be the reason for the modulation in fluorescence lifetime.