NMR parameters of SiC-doped (6,0) zigzag single-walled boron phosphide nanotubes: a density functional study

Abstract  

Nuclear magnetic resonance (NMR) parameters including isotropic and anisotropic chemical shielding parameters and electronic structures were calculated using density functional theory (DFT) for silicon–carbide-doped boron phosphide nanotubes. Geometry optimizations were carried out at the B3LYP/6-31G* level of theory using the Gaussian 03 program suite. The isotropic and anisotropic chemical shielding parameters were calculated for the sites of various ¹³C, ²⁹Si, ¹¹B, and also ³¹P atoms in pristine and SiC-doped (6,0) zigzag boron phosphide nanotube models. The calculations indicated that doping of ¹¹B and ³¹P atoms by C and Si atoms had a more significant influence on the calculated shielding tensors than did doping of the B and P atoms by Si and C atoms. In comparison with the pristine model, Si- and C-doping of P and B sites of the zigzag nanotubes reduces the energy gaps of the nanotubes and increases their electrical conductance.     

杂原子掺杂的含单空位缺陷BN纳米管的非线性光学性质

采用密度泛函理论(DFT)研究了杂原子M(M=Li, Na, K, Be, Mg, Ca, C和Si)在B/N单空位缺陷处的掺杂对(6,0)BN纳米管体系非线性光学性质的影响. 采用B3LYP方法共得到了14种几何构型, 并采用BHandHLYP方法计算了这些结构的第一超极化率β₀值. 研究结果表明, 单纯的B或N缺陷几乎不影响BN纳米管体系的非线性光学性质; 与B缺陷处掺杂的体系相比, 杂原子在N缺陷处的掺杂更有利于提高BN纳米管体系的第一超极化率β₀值; 对于同周期掺杂原子, 还原性越强的原子掺杂对BN纳米管体系的第一超极化率β₀值的改善越明显, 表现为β₀(Ⅰ族)>β₀(Ⅱ族)>β₀(Ⅳ族); 对比同主族掺杂原子, 第三周期元素Na和Mg的掺杂能更有效地提高体系的第一超极化率β₀值, 原因主要在于原子半径和还原性等因素共同决定其对BN纳米管体系第一超极化率β₀值的改善程度. 本文研究结果为有效提高BN纳米管体系的非线性光学性质提供了一种新思路, 为基于BN纳米管的非线性光学材料设计提供了有价值的理论信息.     

g-C3N4碳位掺杂电学及光学性质的分析

使用第一性原理研究了C位掺杂的g-C₃N₄的电学性质和光学性质,掺杂原子为B、P、S. g-C₃N₄有C1位和C2 位两种对称位碳原子,其中在C1 位上的掺杂易于C2 位,掺杂体系也较C2 位稳定. 相比于磷和硫在g-C₃N₄上的掺杂,硼掺杂最易于进行. 掺杂后体系的晶体结构之间差别较大,这与掺杂原子的大小以及电负性有关. 由轨道布居分布可知,掺杂后的硼、磷、硫原子价电子发生了变化,表明掺杂原子发生了杂化,与相邻原子以强的共价键相连. 掺杂原子与被取代的碳原子之间的价电子差异导致了能带的增加. 在原来的体系中,掺杂后的体系出现了一条新的能带,因此导致实际带隙下降,表明了掺杂后的体系导电性能增强. 对纯g-C₃N₄及掺杂g-C₃N₄的光学性质分析表明,g-C₃N₄的光学吸收主要在紫外光区,掺杂磷和硫后对g-C₃N₄的光吸收波长范围无改变,掺杂硼后的g-C₃N₄光吸收不再局限于紫外光区,而且延伸至可见光区和红外光区,并在红外光区有很强的吸收,表明g-C₃N₄掺杂硼后能大大地提高光催化效率. 电子能量损失光谱和光导率谱以及介电常数都佐证了上述观点.     

29Si and 13C NMR spectra of permethylpolysilanes

²⁹Si, ¹³C and ¹H NMR spectra are reported for the series of linear permethylpolysilanes Me(SiMe₂)_nMe where n = 1 to 6, for the cyclic permethylpolysilanes (Me₂Si)_n where n = 5 to 8, and for a few related compounds. For linear polysilanes the ²⁹Si and ¹³C chemical shifts can be accurately calculated from simple additivity relationships based on the number of silicon atoms in α, β, γ and δ positions. Adjacent (α) silicon atoms lead to upfield shifts in the ²⁹Si and ¹³C resonances, whereas more remote silicon atoms lead to downfield shifts. The ²⁹Si chemical shifts of the polysilane chains are linearly related to the ¹³C shifts of the carbon atoms attached to the silicon. The ²⁹Si and ¹³C resonances of the cyclic silanes deviate from this relationship. Ring current effects arising from σ delocalization are suggested as an explanation for the deviations. Proton-coupled ²⁹Si NMR spectra are reported for Me₃SiSiMe₃ and for (Me₂Si)_n, n = 5 to 7.     

Calculation of chemical shielding in C-doped zigzag BN nanotubes

Abstract  

Chemical shielding tensors at the sites of various ¹¹B and ¹⁵N nuclei were calculated to study the electronic structure properties of carbon-doped boron nitride nanotubes. The chemical shielding tensors were converted to isotropic and anisotropic chemical shielding parameters. The results reveal the significant effect of C-doping on the chemical shielding tensors at the sites of those ¹¹B and ¹⁵N nuclei located in the nearest neighborhood of the C-doped ring. The isotropic and anisotropic chemical shielding tensors of those B atoms directly bonded to C atoms reach values observed for B atoms placed at the B-mouth of the nanotube.     

29Si and 13C NMR spectra of chloro- and fluoro-substituted linear permethylpolysilanes

²⁹Si and ¹³C NMR spectra are reported for the three halopolysilane series Me(SiMe₂)_nCl, Cl(SiMe₂)_nCl and F(SiMe₂)_nF, where n = 2 to 6. Except for the dihalodisilanes (XSiMe₂)₂, data for all of the compounds fit linear relationships based on substituent constants for chlorine or fluorine atoms in the α, β and γ positions. The effects of halogen substitution on ²⁹Si and ¹³C chemical shifts are rapidly attenuated along the polysilane chain, becoming negligible four atoms away from the halogen. The NMR data provide no evidence for long-range electronic transmission from chlorine or fluorine in halopermethylpolysilanes of the type suggested by other workers [1].     

B24N24 nanocages: a GIAO density functional theory study of 14N and 11B nuclear magnetic shielding and electric field gradient tensors

Abstract  

Density functional theory (DFT) calculations were performed to determine boron-11 and nitrogen-14 nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy parameters in the three most stable B₂₄N₂₄ fullerenes for the first time. The considered samples were first allowed to relax entirely, and then the NMR and NQR calculations were performed on the geometrically optimized models. The calculations of the ¹¹B and ¹⁴N nuclear magnetic shielding tensors and electric field gradient tensors employed the Gaussian 98 software implementation of the gauge-including atomic orbital (GIAO) method using the Becke3, Lee-Yang-Parr (B3LYP) DFT level and 6-311G** and 6-311++G** standard basis sets in each of the three optimized forms, and converted the results to experimentally measurable NMR parameters.The calculated NMR chemical shieldings of the three cages show significant differences, providing a way to identify these clusters. The evaluated NQR parameters of the ¹¹B and ¹⁴N nuclei in the clusters are also reported and discussed.     

Carbon Doping of Defect Sites in Stone–Wales Defective Boron-nitride Nanotubes: A Density Functional Theory Study

We have performed a density functional theory study to investigate the effect of carbon doping on Stone–Wales (SW) defective sites in the armchair (4, 4), (5, 5) and (6, 6) BNNTs, in order to remove structural instability induced by homonuclear N–N and B–B bonds. Two different orientations of SW defect are considered, parallel and diagonal, and then C atoms are doped at different positions of the defect sites. In general, it seems that among the considered arrangements, C atoms prefer to be substituted for the homonuclear B–B bond. The larger HOMO–LUMO band gaps for the most stable configurations indicate that C doping at B–B sites is kinetically more favorable than the other ones. According to calculated nuclear quadrupole resonance (NQR) parameters as a result of C-doping on SW defective sites, the quadrupole coupling constants (C _Q ) of boron nuclei at defective sites decrease by about 0.508–1.406 MHz while ¹⁴N C _Q of the defective sites, except for N₈, increases. Interestingly, C _Q of the N sites directly connected to dopant sites has maximum increment (0.612–2.596 MHz) while C _Q of the N sites belonging to the B₂N₃ pentagon is undergone to some minor changes.     

Nitrogen monoxide storage and sensing applications of transition metal–doped boron nitride nanotubes: a DFT investigation

The structural properties, electronic properties, and adsorption abilities for nitrogen monoxide (NO) molecule adsorption on pristine and transition metal (TM = V, Cr, Mn, Nb, Mo, Tc, Ta, W, and Re) doping on B or N site of armchair (5,5) single-walled boron nitride nanotube (BNNT) were investigated using the density functional theory method. The binding energies of TM-doped BNNTs reveal that the Mo atom doping exhibits the strongest binding ability with BNNT. In addition, the NO molecule weakly interacts with the pristine BNNT, whereas it has a strong adsorption ability on TM-doped BNNTs. The increase in the adsorption ability of NO molecule onto the TM-doped BNNTs is due to the geometrical deformation on TM doping site and the charge transfer between TM-doped BNNTs and NO molecule. Moreover, a significant decrease in energy gap of the BNNT after TM doping is expected to be an available strategy for improving its electrical conductivity. These observations suggest that NO adsorption and sensing ability of BNNT could be greatly improved by introducing appropriate TM dopant. Therefore, TM-doped BNNTs may be a useful guidance to be storage and sensing materials for the detection of NO molecule.

     

Over 1.0 mm-long boron nitride nanotubes

Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 °C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 ± 0.9 × 10⁴ Ω cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system.     

A DFT study on carbon-doping at different sites of (8, 0) boron nitride nanotube

A density functional theory study is carried out to investigate the geometries and electronic structure of pristine and carbon-doped (8, 0) single-walled boron nitride nanotubes (BNNTs). In order to understand the effect of impurities or doping on (8, 0) single-walled BNNT, we simulated C-doping in six different ways. Geometry optimizations reveal that in the considered models, B–N bond lengths are not significantly influenced by C-doping. Based on the quantum theory of atoms in molecules analysis, charge density accumulation for axial B–N bond critical points (BCPs) of pristine BNNT is slightly larger than zigzag ones. However, due to C-doping at the B- or N-tips, the evaluated electron density tends to decrease slightly at both axial and zigzag B–N BCPs. Besides, results indicate that influence of C-doping on properties of the (8, 0) BNNT could be also detected by values of chemical shielding isotropy (σ _iso) and anisotropy (Δσ).     

基于曲率和电子结构的掺杂C50和C70富勒烯的稳定性研究

使用密度泛函理论(DFT)-B3LYP/6-31G^*方法研究了B、N、Si、P和Co在C₅₀和C₇₀中的掺杂能和电子结构, 并基于曲率理论和电子结构探讨了掺杂富勒烯的结构稳定性. 计算结果表明, 掺杂能随着原子曲率的增大而减小, 随着掺杂物种原子半径的增大而增大, B、N、P和Co的掺杂有利于C₅₀结构的稳定, 而B和N的掺杂不利于C₇₀结构的稳定; 除了用于反映原子活性的曲率主要决定掺杂反应性, 各不等价碳原子在C₅₀和C₇₀的最高占据分子轨道(HOMO)中所占成分对掺杂能的影响也很大, 且其成分越大越有利于掺杂. 此外, 掺杂原子得失电子情况与其电负性有关. 本工作将为富勒烯结构稳定性的研究提供理论依据.     

Computational NQR study of a boron nitride nanocone

Abstract  

The electronic structure of a boron nitride nanocone with 240° disclination, and some properties that derive from this structure, were studied by density-functional theory calculations. In the considered model there are only hexagonal rings, with the apex and mouth of the nanocone saturated by hydrogen atoms. The model was optimized, and then the nuclear quadrupole resonance parameters were calculated at the sites of ¹¹B and ¹⁴N nuclei. The results revealed that the nuclei in the boron nitride nanocone are divided into layers with similar electronic properties. The nuclei at the apex and mouth are very important for the electronic behavior of the nanocone, with ¹¹B playing the major role.     

The intrinsic origin of the grain-boundary resistance in Sr-doped LaGaO3

Abstract  

In this paper I summarize our recent investigations (Park and Kim, Phys Chem C 111:14903, 2007; Solid State Ionics 179:1329, 2008) on the origin of the grain-boundary resistance in a doped LaGaO₃, a perovskite-structured solid electrolyte. The partial electronic and ionic resistances of the bulk and the grain boundaries, as well as the total resistance, in 1 mol% Sr-doped LaGaO₃ were measured separately by means of a dc-polarization method and ac-impedance spectroscopy. Both of the partial resistances at the grain boundaries were greater than the bulk counterparts, indicating that the grain boundaries impede the ionic as well as the electronic transport in this material. The transference number of the partial electronic conductivity at the grain boundary was however greater than that in the bulk. This fact strongly suggests that both electronic and ionic charge carriers deplete at the grain boundaries to form the space-charge zones and that the grain-boundary cores in this material are positively charged. In light of the fact that the effective charge of the oxygen vacancy (+2) is greater than that of the electron hole (+1), the oxygen vacancies deplete more sharply in the space-charge zones compared to the electron holes such that the grain boundaries become more mixed conducting relative to the bulk. These observations verify that the electrical conduction across the grain-boundaries in 1 mol% Sr-doped LaGaO₃ is governed by the space charge.     

Adsorption of the nitrosamine and thionitrosamine molecules as carcinogen compounds on the BN and B3Al N nanotubes: A DFT study

DFT calculations were performed to investigation of the influence of doping three atoms of aluminum on the electronic properties of the (4,0) zigzag boron nitride nanotube (BNNT). Also, adsorption properties of nitrosamine (NA) and thionitrosamine (TNA) molecules as carcinogen agents onto BN and B_Al3N nanotubes were studied. The results show that the B_3AlN nanotube is the most energetically favorable candidates for adsorption of these molecules. Also, B(B_3Al)NNT/TNA complexes are more stable than B(B_3Al)NNT/NA complexes. The HOMO–LUMO gap, electronic chemical potential (μ), hardness (?), softness (S), the maximum amount of electronic charge (ΔN_max) and electrophilicity index (ω) for monomers and complexes in the gas and polar solvent phases were calculated. The results show that the conductivity and reactivity of BNNT increase by doping Al atoms instead of B atoms. Also, the interaction of NA and TNA molecules with BN and B_Al3N nanotubes results in significant changes in the electronic properties of nanotubes. Based on the natural bond orbital (NBO) analysis, in all complexes charge transfer occurs from NA and TNA molecules to nanotubes. Theory of atoms in molecules (AIM) was applied to characterize the nature of interactions in nanotubes. It is predicted that, BN and B_3AlN nanotubes can be used to as sensor for detection of NA and TNA molecules.     

Symmetry constraints in energy transfer between state-selected Ar*(3P2, 3P0) metastable atoms and ground state H atoms

The excitation-transfer reaction in thermal energy collisions of state-selected metastable Ar*(³P₂) and Ar*(³P₀) atoms with ground state H atoms, giving excited H*(n = 2) atoms, has been studied with the stationary afterglow technique. The rate constant for the excitation of H atoms by Ar*(³P₂) has been found to be more than one order of magnitude larger than in excitation by Ar*(³P₀). This difference in the reactivity of two metastable species is explained to be a consequence of the attractive nature of the D(²II) and E(²Σ⁺) potentials that develop from the Ar*(³P₂)+H entrance channel and which give curve crossing with the B(²II) and C(²Σ⁺ potentials, respectively, leading to the Ar+H*(n=2) exit channel, whereas only a repulsive ⁴II (Ω=$\text{1}\text{2}$) potential develops from the Ar*(³P₀+H entrance channel.     

1H and 13C nmr study of conformational and electronic structure of 1-vinylpyrroles

The ¹H and ¹³C NMR spectra of some 2-alkyl- and 2,3-dialkyl-1-vinylpyrroles as well as model 1-unsubstituted pyrroles were studied. Alkyi substituents affect electronic structures of the compounds through steric inhibition of p,π-conjugation and π-induction. Correlations of the ¹³C chemical shifts of the pyrrole ring carbon atoms with the total charge density (CNDO/2) of these atoms are established.     

Computational studies on aluminum nitride and aluminum phosphide nanotubes: density functional calculations of 27Al electric field gradient tensors

Abstract  

Nuclear quadrupole resonance (NQR) parameters including the nuclear quadrupole coupling constant (C _Q) and asymmetry parameter (η _Q) at the sites of various ²⁷Al nuclei on (6,0) zigzag and (4,4) armchair AlN and AlP nanotubes (NTs) were calculated by using the density functional theory (DFT) method to study the properties of the electronic structures of the nanotubes. Geometry optimizations were carried out at the B3LYP/6-31G* level of theory using the Gaussian 03 suite of programs. The calculated electric field gradient tensors were converted to the nuclear quadrupole resonance parameters, C _Q constant, and η _Q parameter. The quadrupole resonance parameters in each of the structures were divided into four layers with equivalent electric field gradient tensor eigenvalues in each layer. The results show that, in AlN and AlP nanotubes, the Al atoms at the edges of the nanotubes play dominant roles in determining the electronic behavior of the nanotubes and important roles in growth and synthesis processes of the nanotubes. Also the average values of C _Q(²⁷Al) for the AlNNT models were higher in comparison with the AlPNT models, while variations of C _Q(²⁷Al) in AlPNTs were greater in comparison with in AlNNTs.     

Ge-doped (4,4) armchair single-walled boron phosphide nanotube as a semiconductor: a computational study

Abstract  

Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of Ge-doped boron phosphide nanotubes (BPNTs) as a semiconductor at the B3LYP/6-31G* level of theory in order to evaluate the influence of Ge doping on (4,4) armchair BPNTs. We extended the DFT calculations to predict the electronic structure properties of Ge-doped boron phosphide nanotubes, which are very important for production of solid-state devices and other applications. The isotropic (CS^I) and anisotropic (CS^A) chemical shielding parameters for the sites of various ¹¹B and ³¹P atoms, and the quadrupole coupling constant (C _Q) and asymmetry parameter (η _Q) at the sites of various ¹¹B nuclei, were calculated in pristine and Ge-doped (4,4) armchair BPNT models. The calculations indicated that, in these two forms of Ge-doped BPNTs, the binding energies are not attractive and do not characterize a chemisorption process. In comparison with the pristine model, the band gap of the two forms of Ge-doped BPNTs is reduced and increases their electrical conductance. The dipole moments of the Ge-doped BPNT structures show notable changes with respect to the pristine model. The nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) results show that the Ge_B model is a more reactive material than the pristine or Ge_P model.     

Synthesis and crystal structure of MgB12Si2—The first ternary compound in the system B/Mg/Si

We report on the synthesis of MgB₁₂Si₂ the first ternary compound in the system B/Mg/Si. Yellow transparent single crystals were yielded from the elements at 1600 °C in h-BN crucibles welded in Ta ampoules. MgB₁₂Si₂ crystallizes orthorhombic in the space group Pnma with , , and Z=4. The crystal structure is characterized by layers of B₁₂ icosahedra, connected by isolated Si atoms to a three-dimensional framework. Mg atoms are placed in voids of the framework. Each icosahedron forms 8 B-Si bonds and 4 exohedral B-B bonds. The Si atoms are tetrahedrally coordinated by B atoms of the B₁₂ icosahedra.