Laser induced thermal profiles in thermally and optically thin films

The temperature field generated by the weak absorption of a gaussian laser beam in an optically and thermally thin film bounded by two transparent plates is discussed. An analytical solution of the problem is presented together with an algorithm for the numerical integration. The influence of the finite thermal conductivity of the plates is shown in an example.     

Laser heating of optically thin samples

Summary A mathematical model able to describe the temperature profiles generated in a thin film by the steady-state illumination by a Gaussian laser beam is presented. The film is supposed to be made by a weakly absorbing liquid sample bounded by two parallel transparent plates, the cell walls, whose thermal exchange to the surrounding ambient may be assumed to be linear with the temperature difference. An analytical solution of the problem is presented in form of Hankel transform and a matrix numerical approach to the computation of the temperature profiles is reported. It is particularly well suited to a computer implementation and allows one to get very accurate results in very short computing times. The influence of the heat exchange coefficient to the ambient is shown in an example. A check of the method accuracy is performed by comparison with literature results in the particular case of infinite heat exchange coefficient. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.     

Temperature profiles in a two-component heterogeneous system heated with a cw laser

A formalism has been developed to calculate the steady-state temperature profiles induced by a cw laser in a composite system comprising a thick medium covered with a film of another medium. The analysis is carried out assuming that thermal and optical properties of the media are temperature-independent. A concept of the effective thermal conductivity for the system is introduced in terms of the maximum temperature rise. Temperature-distributions are numerically computed in typical cases for a circular Gaussian beam to illustrate dependence on film thickness, thermal conductivities and absorption coefficients of the media and size of the laser beam.     

氧分压对PLD制备ZnO薄膜结构和发光性质的影响

采用脉冲激光沉积(PLD)技术,在Si(100)衬底上制备出高度c轴取向的ZnO薄膜。通过X射线衍射(XRD)谱,扫描电镜(SEM)和室温光致发光(PL)光谱的测量,研究了生长气氛压强的改变对薄膜结构和光致发光的影响。实验结果表明,当氧压从10Pa升高到100Pa时ZnO(002)衍射峰的半峰全宽(FWHM)增大。可以认为这是由于较高的氧压下,到达衬底表面的离子动能减小。这样部分离子没有足够的能量迁移到生长较快的(002)面,c轴取向变差,导致(002)衍射峰的强度降低,半峰全宽增大。随着氧压增大,紫外发光强度增强。这可能是氧压变大,薄膜的化学配比升高,说明化学配比对UV发光的影响要大于薄膜微结构的影响。改变氧气压强对薄膜的表面形貌也有较大的影响。     

Thermal conductivity of e-beam coatings

We present the results of the study on the thermal conductivity of different thin film materials produced by conventional thermal evaporation. The main features of the thermal pulse method employed for the measurement of the thermal conductivity are described. Thermal conductivity can be measured by determining the traveling time of a thermal wave propagating trough the film. A pump laser beam is directed onto a sample consisting of a thin transparent test layer and a totally absorbing substrate for the laser wavelength. As a consequence of the laser pulse, a temperature profile builds up at the substrate-film interface. A thermal pulse starts to diffuse from the substrate-film interface to the surface of the layer. Therefore, the temperature rise at the surface of the test layer starts with a time delay with respect to the laser pulse. The time delay depends on the propagation time of the thermal wave through the layer and is related to the thermal conductivity and the thickness of the layer. Measurements are evaluated by calculations based on the finite difference method. The results show that the analyzed thin films have lower thermal conductivity than the corresponding materials in bulk form.     

Analysis of laser induced thermal mechanical relationship of HfO_2/SiO_2 high reflective optical thin film at 1064 nm

A numerical model is developed for the calculation of transient temperature field of thin film coating induced by a long-pulsed high power laser beam. The electric field intensity distribution of HfO2/Si02 high reflective （HR） film is investigated to calculate the thermal field of the film. The thermal-mechanical relationships are discussed to predict the laser damage area of optical thin film under long pulse high energy laser irradiation.     

Laser cooling of a potassium�Cargon gas mixture using collisional redistribution of radiation

We study laser cooling of atomic gases by collisional redistribution, a technique applicable to ultradense atomic ensembles at a pressure of a few hundred bars. Frequent collisions of an optically active atom with a buffer gas shift atoms into resonance with a far red detuned laser beam, while spontaneous decay occurs close to the unperturbed resonance frequency. In such an excitation cycle, a kinetic energy of the order of the thermal energy k _B T is extracted from the sample. Here we report of recent experiments investigating the cooling of a potassium?Cargon gas mixture, which compared to a rubidium?Cargon mixture investigated in earlier experiments has a smaller fine structure of the optically active alkali atoms. We observe a relative cooling of the potassium?Cargon gas mixture by 120?K.     

Ultrahigh infrared normal spectral emissivity of microstructured silicon coating Au film

We studied infrared normal spectral emissivity on quasi-periodic microstructured silicon, which was prepared by femtosecond laser irradiation in SF6 ambient gas, coated with 100 nm thick Au thin film. The observed emissivity is higher than any reported previously for a flat material with a thickness of less than 0.5 mm, at a temperature range of 200 °C to 400 °C. The emissivity over the measured wavelength region increases with temperature and the spike height. These results show the potential to be used as a flat blackbody source or for applications in infrared thermal sensor, detector, and stealth military technology.     

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.     

Microcavity lasing of optically excited cadmium sulfide thin films at room temperature

We report what is believed to be the first observation of lasing of an optically pumped thin CdS film formed by laser ablation on glass. Laser action is observed at room temperature, and the emission peak is at 501 nm. X-ray diffraction shows that the polycrystalline films are of wurtzite structure and have (002) preferred orientation. Fabry-Perot laser modes are spaced 16 nm apart, indicating a cavity length of 2.9mum . The cavity is formed by consistently self-formed microcavities within the hexagonal lattice.     

Optical transmission and reflection of aluminum film irradiated by nanosecond laser beam and experimental studying of phase-explosion

In this paper we present evidence for a phase explosion during the laser-induced ablation process by studying the optical reflectivity of the ablated plume. The ablation was produced by irradiating thin film aluminum coated on a quartz substrate with a single pulse laser beam in ambient air. The laser pulse was provided by the second harmonic of a Q-switched Nd:YAG laser with ∼10 ns pulse duration. The transmission of a low power He–Ne laser beam through the hot ablated material plume and its reflection (from the front surface, and rear surface of aluminum film) were also monitored during the duration of the ablation event. The results show that the front surface reflectivity is enhanced at an early time of ablation which is described as strong evidence for the creation of a phase explosion in this process.     

薄片激光器热效应及其对输出功率的影响

建立了光强分布为高斯型的抽运光端面单程抽运时薄片激光器的温度模型, 实验测量了不同抽运功率下薄片介质表面的 温度分布、温度随时间的变化特性以及介质表面的温度差. 采用Hartmann法测量了薄片介质的热焦距. 考虑热焦距随抽运功率的变化, 基于四能级系统薄片激光器的速率方程组, 建立了薄片激光器热效应对输出功率影响的物理模型, 薄片激光器输入-输出功率曲线与实际相符. 所得结果对薄片激光器的设计和优化具有一定的指导意义.     

碱性品红光致聚合物薄膜的光致光衍射

本文研究了全息存储实验中以波长532 nm的半导体激光器作为记录和读出光源,碱性品红作为光敏剂的丙烯酰胺基光致聚合物薄膜的光致光衍射现 象.它可以考虑为透过全息干涉条纹的原始入射光和反射光,与来自光聚物中未曝光的不均匀表面和内部的散射光四波混频的结果.根据简并四波混频理论中的位相匹配条件对双光束全息写入时产生的衍射光锥,以及单光束辐照复现时产生的衍射光锥现象分别做出了理论解释;并且利用全息散射理论结合三角学知识对入射光的入射角与衍射光锥的锥角的依赖关系进行了深入讨论. 关键词： 全息 光致聚合物 衍射光锥 碱性品红     

Fabrication of micro/nano crystalline ITO structures by femtosecond laser pulses

A method is proposed for the fabrication of micro/nano crystalline indium tin oxide (c-ITO) structures using a Ti:Sapphire laser with a repetition rate of 1 kHz and a wavelength of 800 nm. In the proposed approach, an amorphous ITO (a-ITO) thin film is transformed into a c-ITO micro/nano structure over a predetermined area via laser beam irradiation, and the residual a-ITO thin film is then removed using an etchant solution. The fabricated c-ITO structures are observed using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). The observation results show that the use of a low repetition rate laser induces a high thermal cycling effect within the ITO film and therefore prompts the formation of micro-cracks in the c-ITO structure. In addition, it is shown that as the laser power approaches the ablation threshold of the a-ITO thin film, nanogratings and disordered nanostructures are formed along the center lines of the c-ITO patterns formed using linearly polarized and circularly polarized laser beam irradiation, respectively. The nanogratings are found to have a period of approximately 200 nm (i.e. one-quarter of the irradiation wavelength), while the nanostructures have an average diameter of approximately 100–160 nm.     

The effect of different ambient gases, pressures, and substrate temperatures on TiO2 thin films grown on Si(100) by laser ablation technique

Pure titanium dioxide (TiO₂) thin films were deposited on single-crystal Si(100) substrates by laser ablation. We investigated the effects of ambient gas (O₂ or Ar), pressures, and substrate temperatures on film quality. From the annealing experiment of the deposited TiO₂ thin film under Ar or O₂ ambient gas, we see the chemical effect of ambient gas on film quality. The crystallinity of the deposited TiO₂ thin film is best at 700 °C in the substrate temperature range attempted, 400-700 °C, and at pressures of 0.1 Torr and below. The rutile phase is dominant under most experimental conditions. Only under very extreme conditions did we obtain a thin film of the anatase phase.     

High Reflection Ge_(0.45)Te_(0.55) Recording Films

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用于高功率密度光束控制的光寻址光阀研制

为解决光寻址液晶光阀在高功率密度光束控制领域的应用限制,介绍一种可用于高功率密度激光系统的光寻址液晶光阀,该光阀开关比不低于140∶1,可在高于2300 W/cm²的连续激光系统中正常工作。同时,所研制的光阀可在高重频吉瓦(GW)级功率密度的fs脉冲激光系统中正常工作,在该系统最大功率密度激光作用下,光阀未见明显温度变化,该脉冲激光系统最大平均功率密度超过300 W/cm²。     

Thermal modeling of laser-annealing-induced crystallization of amorphous NiTi thin films

Laser annealing of shape memory alloy thin films provides new opportunities in actuator design and fabrication for microelectromechanical systems applications. In this paper, we present a three-dimensional thermal model to simulate the crystallization process when a laser beam is swept across an amorphous NiTi thin film. Experimental crystallite nucleation and growth rates are included in the model to enable prediction of the size of the crystallized region as a function of laser annealing parameters. The model can also be used to study the crystallization of other material systems by means of laser annealing. PACS 42.62.-b; 81.20.-n; 81.30.Kf     

Self-compensation of thermal lens in high-power diode pumped solid-state lasers

We present a comprehensive model to describe the optic-thermal coupling in the diode pumped solid-state lasers (DPSSL). The thermal transition of particles at the upper laser level leads the heat-generation of laser crystals to depend on shape of the laser beam, while the laser field is also influenced by the temperature because of the thermal excitation of doped particles among various Stark levels. These effects, together with the usual thermal-optic effect that induces a fluctuation of the refraction index by an inhomogeneous temperature distribution, cause a complicated coupling between the laser field and the temperature field. We show that the optic-thermal coupling plays an important role in high-power DPSSL with larger size beam. That effect may yield a self-compensation for the thermal lens and improve the beam quality.     

Nonlinear optical characterization of cluster dynamic in water in oil microemulsion by a pump probe laser beam technique

We present a new pump probe laser beams configuration for the nonlinear optical characterization of microemulsions. We detect the variation of the on-axis optical intensity of the probe beam as generated by the concentration profile induced in an optically thin film of microemulsion by the pump beam. A mathematical model has been introduced to describe the phenomenon. The technique allows the determination of both Kerr-like optical nonlinearity and time constants and, therefore, it gives information both on cluster dimension and their shape. We discuss its application to WAD (water/AOT/decane, where AOT denotes sodium-bis-di-ethyl-sulfosuccinate) with the application of a strong electric field of optical source. Comparison between theoretical predictions and experimental results confirms the presence of giant optical nonlinearity in the absence of turbidity divergence. Chainlike shape of clusters, of the kind already reported with the application of strong electric field, could justify this result. Received 26 October 2002 RID="a" ID="a"e-mail: vicari@na.infn.it