XRD and XPS characterisation of transition metal silicide thin films

Binary transition metal silicides based on the systems Ti–Si, Fe–Si, Ni–Si and Cr–Si were fabricated on Si wafers by means of ion-beam co-sputter deposition and subsequent annealing. The crystalline structures of the phases formed were identified from the characteristic patterns acquired by means of X-ray diffraction (XRD) measurements. The phase formation sequences were described by means of the Pretorius' effective heat of formation (EHF) model. For the Ti–Si, Fe–Si and Ni–Si systems, single phase thin films of TiSi₂, β-FeSi₂ and NiSi₂ were generated as the model predicts, while a mixture of CrSi + CrSi₂ phases was obtained for the Cr–Si system. The surface chemical condition of individual specimens was analysed by using X-ray photoelectron spectroscopy (XPS). The chemical shifts of transition metal 2p_3/2 peaks from their metallic to silicide states were depicted by means of the Auger parameters and the Wagner plots. The positive chemical shift of 2.0 eV for Ni 2p_3/2 peak of NiSi₂ is mainly governed by the initial-state effects. For the other silicide specimens, the initial-state and final-state effects may oppose one another with similar impact. Consequently, smaller binding energy shifts of both negative and positive character are noted; a positive binding energy shift of 0.3 eV for the Fe 2p_3/2 level was shown for β-FeSi₂ and negative binding energy shifts of 0.1 and 0.3 eV were determined for CrSi + CrSi₂ and TiSi₂, respectively.     

Electronic excitations and luminescence of SrAlF5 crystals doped with Ce3+ ions

This paper reports the results of a time-resolved photoluminescence and energy transfer processes study in Ce³⁺ doped SrAlF₅ single crystals. Several Ce³⁺ centers emitting near 4 eV due to 5d-4f transitions of Ce³⁺ ions substituting for Sr²⁺ in non-equivalent lattice sites were identified. The lifetime of these transitions is in the range of 25–35 ns under intra-center excitation in the energy region of 4–7 eV at T = 10 K. An effective energy transfer from lattice defects to dopant ions was revealed in the – 7–11 eV energy range. Both direct and indirect excitation channels are efficient at room temperature. Excitons bound to dopants are revealed at T = 10 K under excitation in the fundamental absorption region above 11 eV, as well as radiative decay of self-trapped excitons resulting in luminescence near 3 eV.     

Density functional theory study of the adsorption of methanthiol on Au(1 1 1): Role of gold adatoms

By performing density functional theory calculations, this work clarifies the sites and energetics of both the non-dissociative and dissociated adsorptions of CH₃SH on clean Au(1 1 1) and Au(1 1 1) with intrinsic defects. It was found that the adsorption on defect-free Au(1 1 1) is most stable for non-dissociative CH₃SH. Its direct molecular dissociation to form CH₃S/Au and H/Au is barred by an activation barrier of 0.9 eV. However, the presence of neighboring Au_ad can assist the dissociation reaction to form CH₃S–Au_ad–H by lowering the energy barrier to 0.6 eV. As for the dissociated CH₃S, the surface geometry of two CH₃S joined by a Au_ad is the most favorable one.     

Topmost-surface-sensitive Si-2p photoelectron spectra of clean Si(1 0 0)-2 × 1 measured with photoelectron Auger coincidence spectroscopy

Topmost-surface-sensitive Si-2p photoelectron spectra of a clean Si(1 0 0)-2 × 1 surface have been measured using Si-2p photoelectron Si-L₂₃VV Auger coincidence spectroscopy (Si-2p–Si-L₂₃VV PEACS). The escape depth of the PEACS electrons is estimated to be ～1.2 Å. The results support the assignments of the Si up-atoms, the Si down-atoms, the Si 2nd-layer, and the Si bulk proposed in previous researches. The Si-2p component with a binding energy of ?0.23 eV relative to the bulk Si-2p_3/2 peak, is shown to originate mainly from the topmost surface. Site selectivity of PEACS is indicated to be achieved to some degree by carefully selecting the kinetic energy of the Auger electrons. Since PEACS can be applied to any surface, the present study opens a new approach to identify PES components.     

The broadband NIR emission properties of Bi doped La2O3–Al2O3–SiO2 glass

Bi₂O₃ doped 65SiO₂–20Al₂O₃–15La₂O₃ (in mole%) glasses were prepared by the traditional melting–quenching method. The spectroscopic properties and mechanism of NIR broadband emission in these glasses were investigated in this work. Three excitation wavelengths of 500, 700 and 800 nm were used to test emission spectra. The emission band under 500 nm excitation can be regarded as combination of emission bands under 700 and 800 nm excitation. 2.0 mole% is found to be the optimal Bi₂O₃ doping level in this glass. Under 500 nm excitation its emission peak, FWHM and lifetime of emission band are 1160 nm, 300 nm and 569 μs, respectively. The longest fluorescent lifetime reaches 620 μs under 700 nm excitation. The valence state of Bi in these glasses is suggested to be lower than +3 by X-ray photoelectron spectroscopy. With the help of energy matching, we infer that both Bi⁰ and Bi⁺ centers are responsible for the NIR fluorescence of Bi₂O₃ doped 65SiO₂–20Al₂O₃–15La₂O₃ glass.     

Activation of methyl acetate on Pd(111)

The adsorption and activation of methyl acetate (CH₃COOCH₃), one of the simplest carboxylic esters, on Pd(111) have been studied using self-consistent periodic density functional theory calculations. Methyl acetate adsorbs weakly through the carbonyl oxygen. Its activation occurs via dehydrogenation, instead of direct C–O bond dissociation, on clean Pd(111): It is much more difficult to dissociate the C–O bonds (E_a ≈ 2.0 eV for the carbonyl and acetate–methyl bonds; E_a = 1.0 eV for the acetyl–methoxy bond) than to dissociate the C–H bonds to produce enolate (CH₂COOCH₃; E_a = 0.74 eV) or methylene acetate (CH₃COOCH₂; E_a = 0.82 eV). The barriers for C–H and C–O bond dissociation are directly calculated for enolate and methylene acetate, and estimated for further dehydrogenated derivatives (CH₃COOCH, CH₂COOCH₂, and CHCOOCH₃) based on the Brønsted–Evans–Polanyi linear energy relations formed by the calculated steps. The enolate pathway leads to successive dehydrogenation to CCOOCH₃, whereas methylene acetate readily dissociates to yield acetyl. The selectivity for dissociating the acyl–alkoxy C–O bond, which is desired for alcohol formation, is therefore fundamentally limited by the facility of dehydrogenation under vacuum/low-pressure conditions on Pd(111).     

Luminescent vacuum ultraviolet spectroscopy of Cr3+ ions in nanostructured aluminum oxide

Impurity Cr³⁺ centers in submicron and nanostructured Al₂O₃ crystals of different phase compositions at temperatures of 300 and 7.5 K were studied by a luminescent vacuum ultraviolet (VUV) spectroscopy method. Photoluminescence (PL) spectra and the energies of ²E, ⁴T₂, and ⁴T₁ excited states of Cr³⁺ ion depend on the type of crystalline samples phase. The PL excitation spectrum of R-line in α-Al₂O₃ nanoscale crystals is formed by intracenter transitions (2.5–5.5 eV region), by charge transfer band (6.9 eV) and by effective formation of impurity-bound excitons (9.0 eV region). Such impurity-bound excitons correspond to O₂p→Al₃s electron transition in surroundings of an impurity Cr³⁺ center. The efficiency of impurity-bound excitons formation decreases with the increase of the grain size above 100 nm. The size dependence is noticeably shown in PL excitation spectra in VUV region. Excitons bound to impurity centers do not appear in nanostructured δ+θ-Al₂O₃ crystals. The effect of the electron excitation multiplication is observed distinctly in nanostrucured α-Al₂O₃ at an excitation energy above 19 eV (more than 2E_g).     

Energy relaxation through the π*-state in C,F and O K-shell excited CF3COCH3

Total photoabsorption spectra of CF₃COCH₃ were measured in the C, F and O K-shell regions and the peak assignments were tentatively given. The K-shell electrons of C, F and O atoms were selectively excited into the π^* orbital. The kinetic energy (KE) distribution of CF₃⁺ formed through the π^* states gave the maxima at KE = 0 and 0.43 eV. The yield of CF₃⁺ with KE = 0 eV increased from 10 to 50% by changing the excitation sites from F 1s to O 1s. This finding was reasonably understood by considering that intramolecular energy flows from the initially excited K-shell electron to vibrational modes of CF₃ group. The KE distribution of CH₃⁺ showed a mirror image of that for CF₃⁺.     

Surface and core hole effects in X-ray photoelectron spectroscopy

In XPS analysis, two effects, which significantly reduce the measured peak intensity, are usually neglected: the core hole left behind in an XPS process which causes “intrinsic” excitations and excitations as the photoelectron pass through the surface region. We have calculated these effects quantitatively for various energies, geometries, and materials. Instead of considering the two effects separately, we introduce a new parameter, namely the correction parameter for XPS or CP_XPS, which takes into account both effects. We define this CP_XPS as the change in probability for emission of a photoelectron caused by the presence of the surface and the core hole in comparison with the situation where the core hole is neglected and the electron travels the same distance in an infinite medium. The calculations are performed within the dielectric response theory by means of the QUEELS–XPS software determining the energy-differential inelastic electron scattering cross-sections for X-ray photoelectron spectroscopy (XPS) including surface and core hole effects. This study has been carried out for electron energies between 300 eV and 3400 eV, for angles to the surface normal between 0° and 60° and for various materials. We find that the absolute effect is a reduction by 35–45% in peak intensities but that the variation in CP_XPS with material, angle and energy are < ± 10% for emission angle ≤ 60° and photoelectron energy ≤ 1500 eV. This implies that when XPS analysis is done using relative intensities, the combined effect of the surface and of the core hole is typically less than ≈ ± 10% for geometries and energies normally used in XPS. In practice, it is however difficult to determine the bare peak intensity without the intrinsic electrons because the two overlap in energy.     

Synthesis and photoluminescence study of rare earth activated phosphor Na2La2B2O7

The photoluminescence properties in UV and N-UV excitable range for the phosphors of Na₂La₂B₂O₇: RE (RE=Eu, Tb, Ce, Sm, Gd) are investigated. The solution combustion synthesis technique was employed for the synthesis of the phosphors Na₂La₂B₂O₇: RE. The photoluminescence measurements of the phosphors were carried out on a HITACHI F7000 Fluorescence Spectrophotometer. The PL and PL excitation (PLE) spectra indicate that the main emission wavelength of Na₂La₂B₂O₇: Eu are 591 and 615 nm, Na₂La₂B₂O₇: Ce shows dominating emission peak at 387 nm and Na₂La₂B₂O₇: Tb displays green emission at 493, 544, 593 and 620 nm at 254 nm excitation, while Na₂La₂B₂O₇: Sm shows the main emission peak wavelengths 566 and 604 nm at 405 nm excitation and Na₂La₂B₂O₇: Gd shows dominating emission peak at 312 nm at 274 nm excitation. These phosphors may provide a new kind of luminescent materials under ultraviolet and near ultraviolet excitation for various applications.     

Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

High density of silicon nanowires (SiNWs) were synthesized by a hot-wire assisted plasma enhanced chemical vapor deposition technique. The structural and optical properties of the as-grown SiNWs prepared at different rf power of 40 and 80 W were analyzed in this study. The SiNWs prepared at rf power of 40 W exhibited highly crystalline structure with a high crystal volume fraction, X_C of ～82% and are surrounded by a thin layer of SiO_x. The NWs show high absorption in the high energy region (E>1.8 eV) and strong photoluminescence at 1.73 to 2.05 eV (red–orange region) with a weak shoulder at 1.65 to 1.73 eV (near IR region). An increase in rf power to 80 W reduced the X_C to ～65% and led to the formation of nanocrystalline Si structures with a crystallite size of <4 nm within the SiNWs. These NWs are covered by a mixture of uncatalyzed amorphous Si layer. The SiNWs prepared at 80 W exhibited a high optical absorption ability above 99% in the broadband range between 220 and ～1500 nm and red emission between 1.65 and 1.95 eV. The interesting light absorption and photoluminescence properties from both SiNWs are discussed in the text.     

Self-assembled line growth of allyl alcohol on the H-terminated Si(100)-(2 × 1) surface

Using first-principles density-functional calculations, we investigate the growth mechanism of allyl alcohol (ALA) line on the H-terminated Si(100)-(2 × 1) surface. Unlike the allyl mercaptan (CH₂ = CH ? CH₂ ? SH) line, which was observed to grow across the Si dimer rows, we find that ALA (CH₂ = CH ? CH₂ ? OH) has the line growth along the Si dimer row. The self-assembled growth of ALA line occurs via the radical chain reaction mechanism, similar to the case of a typical alkene molecule, styrene. Our calculated energy profile along the reaction pathway shows that the different growth direction of ALA line compared with that of allyl mercaptan line is ascribed to the great instability of the oxygen radical intermediate, which prevents the line growth across the dimer rows.     

Optical characterization of CuIn5S8 crystals by ellipsometry measurements

Optical properties of CuIn₅S₈ crystals grown by Bridgman method were investigated by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficients were obtained from the analysis of ellipsometry experiments performed in the 1.2–6.2 eV spectral region. Analysis of spectral dependence of the absorption coefficient revealed the existence of direct band gap transitions with energy 1.53 eV. Wemple–DiDomenico and Spitzer–Fan models were used to find the oscillator energy, dispersion energy, zero-frequency refractive index and high-frequency dielectric constant values. Structural properties of the CuIn₅S₈ crystals were investigated using X-ray diffraction and energy dispersive spectroscopy analysis.     

A time-resolved luminescence spectroscopy study of non-linear optical crystals K2Al2B2O7

We report the results of complex study of luminescence and dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals obtained using low-temperature luminescence-optical vacuum ultraviolet spectroscopy with sub-nanosecond time resolution under selective photoexcitation with synchrotron radiation. The paper discusses the decay kinetics of photoluminescence (PL), the time-resolved PL emission spectra (1.2–6.2 eV), the time-resolved PL excitation spectra and the reflection spectra (3.7–21 eV) measured at 7 K. On the basis of the obtained results three absorption peaks at 4.7, 5.8 and 6.5 eV were detected and assigned to charge-transfer absorption from O^2? to Fe³⁺ ions; the intrinsic PL band at 3.28 eV was revealed and attributed to radiative annihilation of self-trapped excitons, the defect luminescence bands at 2.68 and 3.54 eV were separated; the strong PL band at 1.72 eV was revealed and attributed to a radiative transition in Fe³⁺ ion.     

Dual color emitting Eu doped strontium orthosilicate phosphors synthesized by bio-template assisted ultrasound for solid state lightning and display applications

A novel Sr₂SiO₄:Eu (1–5 mol %) superstructures (SS) were synthesized using bio-sacrificial A.V. gel assisted ultrasound method. Powder X-ray diffraction patterns confirmed the presence of both α and β phase formation. It was evident that the morphological growth was highly reliant on A.V. gel concentration, sonication time, pH and sonication power. The formation mechanisms for different hierarchical SS were proposed. From diffuse reflectance spectra, the energy band gap was estimated and found to be ∼4.70–5.11 eV. The photoluminescence emission spectra for the excitation at 392 nm, shows characteristic emission peaks at 593, 613, 654 and 702 nm which were attributed to ⁵D₀ → ⁷F₀, ⁷F_1, ⁷F₂ and ⁷F₃ transitions of Eu³⁺ ions respectively. Conversely, when the samples were subjected to the heat treatment at 850 °C for 3 h under argon atmosphere, display an intense broad emission peak with two de-convoluted peaks at 490 and 550 nm due to 4f⁶5d¹→4f¹ (⁸S_7/2) transitions of Eu²⁺ ions. The concentration quenching phenomenon was discussed which attributes to energy transfer, electron–phonon coupling and ion–ion interaction. The Judd–Ofelt intensity parameters and other radiative properties were estimated by using emission spectra. The CIE chromaticity coordinate values of Sr₂SiO₄:Eu²⁺ and Eu³⁺ nanophosphors were located in green and red regions respectively. The calculated CCT and CRI values specify that the present phosphor can be fairly useful for both green and red components of white LED’s. Luminescence decay and quantum yield suggest the suitability of this phosphor as an efficient luminescent medium for light emitting diodes. Overall, the results elucidated a rapid, environmentally benign, cost-effective and convenient method for Sr₂SiO₄:Eu³⁺ synthesis and for the possible applications such as solid state lighting and display devices.     

Photoluminescence of Er-doped Si-SiO2 and Al–Si-SiO2 sputtered thin films

Er-doped Si-SiO₂ and Al–Si-SiO₂ films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er³⁺: ⁴I_13/2→⁴I_15/2 emission of Er-doped Si-SiO₂ yields a maximum intensity for annealing at 700–800 °C. ⁴I_13/2→⁴I_15/2 peak emission for Er-doped Al–Si-SiO₂ at 1525 nm is shifted from that for Er-doped Si-SiO₂ at 1530 nm and the bandwidth increases from 29 to 42 nm. ⁴I_13/2→⁴I_15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the ⁴I_13/2→⁴I_15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the ⁴I_11/2 level in Er-doped Si-SiO₂ involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions.     

Monochromatic soft X-ray-induced reactions of CCl2F2 adsorbed on Si(111)-7 × 7 near the Si(2p) edge

Continuous-time photoelectron spectroscopy (PES) and continuous-time core-level photon-stimulated desorption (PSD) spectroscopy were used to study the monochromatic soft X-ray-induced reactions of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7 at 30 K (CCl₂F₂ dose = 2.0 × 10¹⁴ molecules/cm², ~ 0.75 monolayer) near the Si(2p) core level. Evolution of adsorbed CCl₂F₂ molecules was monitored by using continuous-time photoelectron spectroscopy at two photon energies of 98 and 120 eV to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are _~1.4 × 10^? 18 and ~ 8.0 × 10^? 18 cm², respectively. Sequential F⁺ PSD spectra obtained by using continuous-time core-level photon-stimulated desorption spectroscopy in the photon energy range of 98–110 eV show the variation of their shapes with photon exposure and depict the formation of surface SiF species. The dissociation of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7, irradiated by monochromatic soft X-ray in the photon energy range of 98–110 eV, is mainly due to dissociative electron attachment and indirect dipolar dissociation induced by photoelectrons emitted from the silicon surface.     

Synthesis and cathodoluminescent properties of Y2SiO5:Tb3+ phosphors prepared from uniform precursor

The luminescent properties of phosphors are sensitive to the size of phosphor particles. The commercial Y₂SiO₅:Tb³⁺ phosphors usually show relatively larger particle size (5–10 μm) due to the irregular morphology of rare earth oxide precursor and thus degrade the luminescent properties. In this paper, we report the Y₂SiO₅:Tb³⁺ phosphors synthesized from the uniform Tb-doped Y₂O₃ precursor by a homogeneous precipitation method. Compared with the commercial phosphors, the obtained Y₂SiO₅:Tb³⁺ phosphors manifest the uniform morphology with much smaller particles distributing from 0.8 μm to 1.9 μm. Consequently, the cathodoluminescent intensity under low excitation voltage (1–5 kV) was increased, demonstrating a strong green emission with a dominant wavelength of 545 nm. Our results indicate an effective way to develop the high-quality phosphors for field emission display.     

STM light emission from Si(1 1 1)-(7 × 7) surface using a silver tip

Scanning tunneling microscope-light emission (STM-LE) from the Si(1 1 1)-(7×7) surface has been measured using silver tips. For silver tips photon emission was enhanced by more than 100 times as compared with that for tungsten or platinum–iridium alloy tips. A broad spectrum with a single peak at ∼2.25 eV was observed. The spectrum obtained can be reproduced by a theory based on the macroscopic dielectric response of the tip-sample system, indicating that the observed emission arises from the localized plasmons on the silver tip excited by tunneling electrons. Spatial variations in the emission intensity at the atomic scale was observed even under low bias voltage (2 V) and low tunneling current (1 nA) conditions.     

Band-gap engineering of ZnSe quantum dots via a non-TOP green synthesis by use of organometallic selenium compound

Single-step green synthesis of ZnSe quantum dots (QDs) from 1,2,3-selenadiazole and zinc acetate resulted in formation of high-quality mono-disperse ZnSe with engineered band-gap. The present method is a non-TOP green route where oleic acid is used as a surfactant. The size quantization effect can be monitored by UV–visible spectroscopy which shows in the range 370–387 nm (3.20–3.35 eV), a blue shift of about 70–90 nm with respect bulk ZnSe. Photoluminescence measurement revealed band-gap emission at ∼390 nm (3.18 eV, Stokes shift of <10 nm with FWHM <30 nm). Broadened XRD pattern indicated formation of cubic ZnSe and the estimation of particle size from the line broadening at 〈1 1 1〉 matched well the TEM analysis.