Linear and Nonlinear Optical Absorptions of a Donor Impurity in Spherical Quantum Dots

An investigation of the optical properties of a hydrogenic donor in sphericalparabolic quantum dots has been performed by using the matrix diagonalization method. The optical absorption coefficient between the ground (L=0) and the first excited state (L=1) have been examined based on the computed energies and wave functions. The results are presented as a function of the incident photon energy for the different values of the confinement strength. These results show the effects of the quantum size and the impurity on the optical absorption coefficient of a donor impurity quantum dot.     

纤锌矿GaN柱形量子点中类氢施主杂质态

在有效质量近似和变分原理的基础上,选取含两个变分参数的波函数,研究了纤锌矿结构的GaN/AlxGa1-xN单量子点中类氢施主杂质体系的结合能随量子点(QD)尺寸以及杂质在量子点中位置的变化,并与以前使用不同尝试波函数的计算结果进行了比较。结果表明:由我们选取的两变分参数波函数得到的结果与前人选取的两变分参数波函数得到的结果相比有所改进,而与选取一个变分参数波函数得到的结果一致。同时我们还计算了体系的维里定理值随量子点半径的变化情况,所得结果与前人工作结果一致,说明本文选取的两变分参数波函数能很好地描述柱形量子点中施主杂质态的运动。     

闪锌矿GaN量子点中类氢杂质态的束缚能

在有效质量近似下,用变分法研究了闪锌矿GaN/AlxGa1-xN单量子点中的类氢杂质态。结果表明量子点中的杂质位置和量子点结构参数（量子点高度H、半径R及Al含量x）对施主束缚能有很大的影响。当杂质位于量子点中心时,施主束缚能 有最大值。此外,施主束缚能 随着量子点高度H（半径 ）的增大而减小,随着量子点中Al含量x的增大而增大。     

Impurity-related electronic properties in quantum dots under electric and magnetic fields

This paper presents a systematic study of the ground-state binding energies of a hydrogenic impurity in quantum dots subjected to external electric and magnetic fields.The quantum dot is modeled by superposing a lateral parabolic potential,a Gaussian potential and the energies are calculated via the finite-difference method within the effectivemass approximation.The variation of the binding energy with the lateral confinement,external field,position of the impurity,and quantum-size is studied in detail.All these factors lead to complicated binding energies of the donor,and the following results are found:(1) the binding energies of the donor increase with the increasing magnetic strength and lateral confinement,and reduce with the increasing electric strength and the dot size;(2) there is a maximum value of the binding energies as the impurity placed in different positions along the z direction;(3) the electric field destroys the symmetric behaviour of the donor binding energies as the position of the impurity.     

Impurity-related optical response in a 2D and 3D quantum dot with Gaussian confinement under intense laser field

ABSTRACT

Using the two-dimensional (2D) diagonalisation method, the impurity-related electronic states and optical response in a 2D quantum dot with Gaussian confinement potential under nonresonant intense laser field are investigated. The effects of a hydrogenic impurity on the energy spectrum and binding energy of the electron and also intersubband optical absorption are calculated. The obtained numerical results show that the degeneracies of the excited electron states are broken and the absorption spectrum exhibits a redshift with the values of the laser field. The findings indicate a new degree of freedom to tune the performance of novel optoelectronic devices, based on the quantum dots and to control their specific properties by means of intense laser field and hydrogenic donor impurity. Using the same Gaussian confinement model, the electronic properties of a confined electron in the region of a spherical quantum dot are studied under the combined effects of on-centre donor impurity and a linearly polarised intense laser radiation. The three-dimensional problem is used to theoretically model, with very good agreement, some experimental findings reported in the literature related to the photoluminescence peak energy transition.     

Impurity related optical properties in tuned quantum dot/ring systems

In this paper, we explore the linear, third-order nonlinear, and total optical absorption coefficient (OAC) and refractive index change coefficient (RICC) of a GaAs doped quantum dot/quantum ring (QD/QR) with parabolic-inverse squared potential in conjunction with modified Gaussian confinement and taking into account the presence of on-centre shallow donor and or acceptor impurity. Calculations are done via the compact density matrix formalism and the iterative method. The two-dimensional parabolic QD/QR is subjected to uniform magnetic field oriented perpendicularly to the plane of the structure. The energy levels and wave function are derived within the framework of effective-mass and parabolic band approximation. The results exhibit that the OACs and RICC are clearly affected by different parameters of the applied confinement, strength of magnetic field, and the presence of impurity. The variation of confinement potential, nature of impurity, dot radius, cyclotron frequency of the parabolic confinement potential, and geometric parameter of the on-centre repulsive potential lead to either a red-shift or a blue-shift of the resonant peaks of the OACs and of the maximum and minimum of the RICC together with significant variations of the magnitudes of these resonant structures.     

Core/shell/shell spherical quantum dot with Kratzer confining potential: Impurity states and electrostatic multipoles

An exactly solvable problem of impurity states is considered in core/shell/shell spherical quantum dot. Kratzer molecular potential is taken for confinement potential. The analytical expressions are obtained for the energy spectrum and wave functions of the impurity electron. The dependencies of the total energy and the binding energy of the impurity on the parameters of the confining potential are investigated. The possibility of the impurity electron leakage is shown in the external environment, due to the specific form of the Kratzer potential. The character of the electrostatic field created by the impurity and the electron is observed on the basis of obtained results. The multipole corrections caused by the dipole and quadrupole moments of the electron are calculated. It is shown that the dipole moment is absent, and the problem reduces to the calculation of only z component for the average values of the diagonal elements of the quadrupole moment tensor. The dependencies of the average values of the quadrupole moment on the Kratzer potential parameters are studied.     

应变纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能的压力效应

考虑应变,在有效质量、有限高势垒近似下,变分研究了纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能随流体静压力、杂质位置及量子点结构参数(量子点高度、半径、Al含量)的变化关系．结果表明,类氢施主杂质态结合能随流体静压力增大而增大,且在量子点尺寸较小时,流体静压力对杂质态结合能的影响更为显著．受流体静压力的影响,杂质态结合能随量子点高度、半径的增加而单调减少,且变化趋势加剧;随Al含量增加而增大的趋势变缓．无论是否施加流体静压力,随着类氢施主杂质从量子点左界面沿材料生长方向移至右界面,杂质态结合能在量子点的右半部分存在一极大值．流体静压力使得极大值点向量子点中心偏移．     

Pressure effects on the donor binding energy in zinc-blende InGaN/GaN quantum dot

Based on the effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of the hydrogenic impurity in zinc-blende (ZB) InGaN/GaN quantum dot (QD) are investigated by means of a variational procedure. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD structure parameter. Moreover, it is found that the hydrostatic pressure has a remarkable influence on the donor binding energy of the hydrogenic impurity located at the vicinity of dot center in ZB InGaN/GaN QD.     

Optical non-linearities associated to hydrogenic impurities in InAs/GaAs self-assembled quantum dots under applied electric fields

Abstract

The effects of the hydrogenic impurity on the electron-related non-linear optical processes in a InAs/GaAs dome-shaped quantum dot with a wetting layer under applied electric fields are studied within the density-matrix formalism. The one-electron energy levels and wave functions are calculated using the effective mass approximation and the finite element method. The non-linear optical absorption, relative refractive index change and non-linear optical rectification associated with interlevel transitions are calculated under a strong probe field excitation for both in-plane and z-polarisation of the incident light. According to our results as the electric field increases the absorption and dispersion peaks decrease and exhibit red shift. Hydrogenic impurity located at the origin induces a blue shift in the optical responses. For the optical absorption coefficient the peaks magnitude is enhanced by the impurity presence independent of the electric field strengths, whereas the non-linear optical rectification is larger in the case with impurity only for zero applied electric field.     

Photoionization cross section of a donor impurity in a two-dimensional anisotropic quantum dot

A system of an electron with a hydrogenic impurity confined in a two-dimensional anisotropic quantum dot has been investigated. We report a calculation for the binding energy of a donor impurity. The important feature of a donor impurity in a two-dimensional anisotropic quantum dot is obtained via an analysis of the binding energy. The photoionization cross section associated with intersubband transitions has been calculated. The results are presented as a function of the incident photon energy. The results show that the photoionization cross section of a donor impurity in a two-dimensional anisotropic quantum dot is strongly affected by the degree of anisotropy and the size of the quantum dot.     

Electric field and impurity effects on optical property of a three-dimensional quantum dot: A combinational potential scheme

The present study seeks to scrutinize the optical properties of an ellipsoidal quantum dot (EQD) containing an electron in the presence of an external electric field and a donor (acceptor) impurity. In this regard, the perturbation theory is used and for different values of the confinement strength and the electric field, the linear, nonlinear and total absorption coefficients are calculated as functions of the incident photon energy. The oscillator strength between the ground and first excited states in the EQD is also calculated in terms of the confinement strength. The results show that the optical properties of an EQD decrease with increases in the ellipticity constant and electric field.     

Electronic and Optical Properties of a Lens Shaped Quantum Dot under Magnetic Field: Second and Third-Harmonic Generation

In the present work, we have studied electronic and optical properties of a lens-shaped quantum dot under an external magnetic field. For this goal, we have calculated the energy levels and wave functions using the finite element method(FEM) for different values of magnetic field. We have also studied effect of magnetic field on second harmonic generation(SHG) and third-harmonic generation(THG) in the lens-shaped quantum dot. In this regard, we have obtained an analytic expression for the SHG and THG by a compact density matrix approach and an iterative procedure. According to the obtained results, it is found that the presence of the magnetic field affects the symmetry of the system. The SHG and THG are decreased with increasing the magnetic field. The magnetic field has a great influence on the energy levels, wave functions, the SHG and THG in a lens shaped quantum dot.     

Electronic and Optical Properties of a Lens Shaped Quantum Dot under Magnetic Field：Second and Third-Harmonic Generation

In the present work, we have studied electronic and optical properties of a lens-shaped quantum dot under an external magnetic field. For this goal, we have calculated the energy levels and wave functions using the finite element method (FEM) for different values of magnetic field. We have also studied effect of magnetic field on second harmonic generation (SHG) and third-harmonic generation (THG) in the lens-shaped quantum dot. In this regard, we have obtained an analytic expression for the SHG and THG by a compact density matrix approach and an iterative procedure. According to the obtained results, it is found that the presence of the magnetic field affects the symmetry of the system. The SHG and THG are decreased with increasing the magnetic field. The magnetic field has a great influence on the energy levels, wave functions, the SHG and THG in a lens shaped quantum dot.     

Electronic structure of two-electron quantum dot with parabolic potential

In this study, we investigate the parabolic potential effects on the ground and excited energy states of two-electron quantum dot with impurity inside an infinite spherical confining potential well. The wave function and energy eigenvalues were calculated using a modified variational optimization procedure based mainly on quantum genetic algorithm and Hartree–Fock–Roothaan method. The results show that the parabolic potential and impurity charge have a strong effect on the energy states and ionization energies. It is worth pointing out that as impurity charge increases, the ionization energy rises, but the ionization dot radius decreases. On the other hand, as parabolic potential increases, the ionization energy decreases, but the ionization dot radius increases.     

柱形量子点中弱耦合磁极化子的性质

应用线性组合算符方法和幺正变换方法,研究在抛物势作用下的柱形量子点中磁极化子的性质。对ZnS量子点的数值计算表明,量子点中磁极化子的基态能量随特征频率、回旋共振频率的增大而增加,这是由于特征频率增加时振动能量、回旋共振频率增加时外磁场中的附加能量增加所致。当特征频率(或回旋共振频率)增加到某一值时,磁极化子能量由负变为正。基态能量随柱高的减小而增加,且柱高越小,增加越快;当柱高减小到某一值时,磁极化子能量也由负变为正。总之,柱形量子点中的磁极化子,其基态能量与量子点的尺度、外磁场、特征频率等有关。     

Structure of the ground state of electrons and holes in a silicon quantum dot with a shallow donor

The results of the calculation of electronic wave functions and spectra of electrons and holes in silicon quantum dots with a shallow impurity center of the donor type are presented. The fine splitting of energy levels induced by the Coulomb interaction of charge carriers with the donor and by the spin-orbit splitting in the valence band is obtained in the framework of the envelope function approximation. It is shown that the maximum removal of degeneracy is accomplished in the case of an asymmetric location of the donor inside the quantum dot when the directions of the donor radius vector do not coincide with the principal crystallographic directions.     

透镜型量子点中类氢杂质基态能的计算

通过有效质量近似和变分法，研究了垂直磁场下透镜型量子点中类氢杂质基态能量，并与球型量子点进行了比较.研究表明：对于球型量子点，基态能仅与杂质的偏离距离有关，与垂直和水平偏离无关；而对于透镜型量子点，由于水平方向和垂直方向束缚势的非对称性，电子基态能不仅与杂质的偏离距离有关，还与杂质偏离方向有关. 关键词： 透镜型量子点 基态能 变分法     

Optical properties of a donor impurity in a two-dimensional quantum pseudodot

We investigate the linear and nonlinear optical properties of a donor impurity confined by a two-dimensional pseudoharmonic potential both including harmonic dot and antidot potentials in the presence of a strong magnetic field. Calculations are made by using the perturbation method and the compact density-matrix approach within the effective-mass approximation. Based on the computed energies and wave functions, the linear, third-order nonlinear and total optical absorption coefficients as well as the refractive index changes have been examined. The results are presented as a function of the incident photon energy for the different values of the chemical potential of the electron gas and the zero point of the pseudoharmonic potential. The results show that the optical properties of a donor impurity in a two-dimensional pseudoharmonic QD are strongly affected by the zero point of the pseudoharmonic potential, the chemical potential of the electron gas and the Coulomb interaction.     

抛物量子点中强耦合束缚极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合束缚极化子的基态和激发态的性质。计算了束缚极化子的基态和激发态的能量、光学声子平均数。讨论了量子点的有效束缚强度和库仑束缚势对基态能量、激发态能量以及光学声子平均数的影响。数值计算结果表明:量子点中强耦合束缚极化子的基态和激发态能量及光学声子平均数均随量子点的有效束缚强度的增加而减小,基态、激发态能量随库仑束缚势的增加而减小,光学声子平均数随库仑束缚势的增加而增大。