载流子在金属/聚对苯乙炔/金属结构中注入及输运的动力学研究

采用紧束缚的Su-Schrieffer-Heeger模型,利用非绝热动力学方法研究了载流子在金属/聚对苯乙炔(poly(p-phenylene vinylene,简记为PPV))/金属三明治结构中注入与输运的动力学过程.发现由于强的电子-晶格相互作用,注入的电荷在PPV链中形成波包,波包的形成与施加在金属电极上的偏压、PPV链上的电场强度及金属电极与PPV之间的界面耦合强度密切相关.在无外电场的情况下,当偏压达到临界值时电荷能够从金属电极注入到PPV链中并形成波包.随着电场强度的增大,波包能 关键词： 金属/聚对苯乙炔/金属结构 载流子输运 波包     

硅太阳能电池的调制载流子红外辐射动态响应与参数分析

建立了调制激光诱发硅太阳能电池的少数载流子密度波数学模型,并利用光致载流子辐射检测掺杂浓度、阻抗及载流子输运参数. 对频域响应曲线中的双弯曲效应进行了研究,构建了小交流信号作用的太阳能电池等效电路拓扑结构,仿真分析了不同掺杂浓度、阻抗电阻和载流子传输参数对频响曲线拐点的影响. 通过光致载流子辐射频域扫描实验与多参数拟合检测了单晶硅太阳电池的施/受主浓度、并联电阻和载流子输运参数. 结果表明：光致载流子辐射技术检测大面积太阳能电池频响曲线的双弯曲是由电容效应所引起的,建立的数学模型可定量描述和预测检测结果,并用于测量太阳能电池的掺杂浓度、电阻和载流子输运参数. 关键词： 调制自由载流子辐射 扫频检测 PN结电容 参数测量     

FeCo-石墨烯纳米复合材料的新奇磁电阻特性

本文报道了FeCo-石墨烯(FeCo-G)纳米复合材料的磁电阻效应.通过改进的方法对一种类普鲁士蓝材料进行热分解,制备出具有核-壳结构的FeCo-G纳米复合材料.对不同条件下制备的FeCo-G样品进行了低温磁性质、电输运和磁输运测量.发现1000℃下制备并经氢气退火的FeCo-G纳米复合材料,室温下呈现高达-9.6%磁电阻效应,且磁电阻值随着温度的升高而增大.如此高的磁电阻可归因于此材料中FeCo-石墨烯界面质量的改善以及载流子在石墨烯基体内高效的跳跃传输.     

光子重吸收对硅片的光载流子辐射特性影响的理论研究

光载流子辐射技术已广泛应用于半导体材料性能的表征,本文基于一种包含光子重吸收效应的光载流子辐射理论模型,对单晶硅中光子重吸收效应对光载流子辐射信号的影响进行了详细的理论分析.分析结果表明,光子重吸收效应对光载流子辐射信号的影响主要取决于样品掺杂浓度、过剩载流子浓度和过剩载流子的分布.由于过剩载流子浓度及其分布与材料电子输运特性密切相关,电子输运参数的变化将导致光子重吸收效应的影响随之变化.进一步分析了光子重吸收效应对具有不同电子输运特性的样品的电子输运参数的影响,并提出了减小光子重吸收效应影响的方法.     

TFTTP作为阴极缓冲层提高有机薄膜太阳能电池的内建电场和载流子收集效率

采用一种新型的电子传输材料TFTTP作为阴极缓冲层提高基于SubPc/C₆₀异质结的有机薄膜太阳能电池的性能. 通过在有机活性层和金属电极之间加入TFTTP界面层,器件的能量转换效率提高了约30%. 系统研究了器件的二极管特性、光电流特性以及内部的光场分布情况,结果表明,TFTTP阴极缓冲层的引入可以有效地提高器件的内建电场,进而增加电荷转移激子的分离效率. 通过使用TFTTP作为阴极缓冲层,在C₆₀/金属界面形成良好的欧姆接触,降低了界面接触电阻,有利于自由载流子的收集.     

MgB2超导线和不同电极材料之间接触电阻的研究

我们用四引线法测量了MgB2超导线和不同电极材料之间的接触电阻,电极材料包括金,铟和银胶,实验数据显示,用热蒸发镀膜的方法制备上的金属材料电极和超导线之间有较小的接触电阻,对电极材料进行后期的退火处理可以有效的降低接触电阻的大小。     

金属电极对有机分子非弹性电子隧穿谱的影响

利用第一性原理计算金属电极下1,6-己二硫醇和1,4-二巯基苯分子结的非弹性电子隧穿谱,发现非弹性电子隧穿谱对金属电极的变化十分灵敏,并且非弹性电子隧穿谱的振动峰位置和强度与硫原子和金属电极表面的距离密切相关.结果表明电极材料和分子与金属成键的情况是影响分子结的非弹性电子输运的重要因素.理论分析进一步表明不同金属电极和有机分子的耦合能不同导致了谱峰强弱的调整.     

多端口石墨烯系统中的非局域电阻

非局域测量方法由于其能够间接探测某些难以直接俘获的非平庸物理机理,近年来已逐渐成为凝聚态物理的研究热点之一.最近的实验在H形多端口石墨烯样品中发现了巨大的非局域电阻信号.在排除了经典欧姆、边缘态等可能的输运形式后,人们倾向于认为这类非局域电阻是由多端石墨烯系统中存在的自旋霍尔效益或谷霍尔效应所导致.借助于非平衡格林函数输运计算,目前的理论可以在同样的多端石墨烯体系中得到部分与实验符合较好的数值模拟结果.针对实验中发现的某些难以理解的、甚至与经典理论相矛盾的非局域电阻性质,例如非局域电阻相比局域电阻在偏离电中性点时的迅速衰减、出现在能隙中的非局域电阻峰值等,目前的理论研究取得了一定的进展,但对这些奇异现象的理解仍存在较大的争议.本综述详细回顾了多端口石墨烯体系中非局域电阻的相关实验,并针对性地介绍与之配套的理论进展及对未来研究的展望.     

采用Al/TaN叠层电极提高Si基Ge PIN光电探测器的性能

金属与Ge材料接触由于存在强烈的费米钉扎效应, 导致金属电极与n型Ge接触引入较大的接触电阻, 限制了Si基Ge探测器响应带宽. 本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的Ge PIN光电探测器. 对比了电极分别为金属Al和Al/TaN叠层的具有相同器件结构的SOI基Ge PIN光电探测器的暗电流、响应度以及响应带宽等参数. 发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻, 将台面直径为24 μ的探测器在1.55 μ的波 长和-1 V偏压下的3 dB响应带宽提高了4倍. 同时, 器件暗电流减小一个数量级, 而响应度提高了2倍. 结果表明, 采用TaN薄层制作金属与Ge接触电极, 可有效钝化金属与Ge界面, 减轻费米钉扎效应, 降低金属与n-Ge接触的势垒高度, 因而减小接触电阻和界面复合电流, 提高探测器的光电性能.     

声子散射对载流子输运特性的影响

分析了晶格振动对固体材料中载流子输运特性的影响,重点阐述了长声学波对载流子的散射作用.使用玻尔兹曼输运理论描述了弱场下载流子的输运特性,给出了使用形变势散射和压电散射机制计算载流子迁移率的详细分析和具体公式.     

The physics of epitaxial graphene on SiC(0001)

Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to be key for the practical use of graphene as a thermoelectric material, which could be achieved with epitaxial graphene. All of these results reveal that epitaxial graphene is physically interesting.     

室温下石墨烯的霍尔效应实验研究

对用化学气相沉积法(CVD)研制的长、宽均为1.23 cm,厚度为3个原子层尺寸的石墨烯样品,进行了室温下的霍尔效应相关研究。实验中电极与石墨烯之间有良好的欧姆接触。通过范德堡法测量了样品在磁场强度为0.353 T,不同电流强度下的霍尔电压,并对结果进行处理分析,得到石墨烯的霍尔系数RH=7.00×10-7m3/C、载流子浓度n=10.52×1024/m3、霍尔元件乘积灵敏度KH=6.87×102m2/C。     

Family of graphene-based superconducting devices

A family of highly sensitive devices based on a graphene nanobridge and superconducting electrodes has been developed, manufactured, and examined. These devices can be used to create a graphene-based integral receiver. A cold-electron bolometer prototype with superconductor-insulator-normal metal tunnel junctions has been studied. Its response to a change in the temperature and external microwave radiation has been measured. A superconducting quantum interferometer with a graphene strip as a weak coupling between superconducting electrodes has been examined. The corresponding modulation of the voltage by a magnetic field at a given current has been measured. The effect of the gate voltage on the resistance of graphene has been analyzed for these samples. To confirm that graphene is single-layer, measurements with the reference samples were performed in high magnetic fields, displaying the half-integer quantum Hall effect.     

锯齿型石墨纳米带叠层复合结的电子输运

基于紧束缚格林函数方法,研究了两半无限长锯齿型石墨纳米带叠层复合结的电子输运性质.结果表明,层间次近邻相互作用、叠层区长度及门电压对复合结的电子透射谱有重要调制作用.层间次近邻相互作用导致复合结的透射谱关于费米能呈现非对称性,与实验结果很好相符.低于费米能第一子能区内周期性出现透射系数为0和1的台阶,呈现全反射与透射现象.随散射结长度增加,透射系数在1内周期性振荡,呈现明显的量子干涉效应.在门电压调控下,低于费米能的透射系数出现了从1到0的转变,类似于开关效应.相关结果对基于石墨烯器件的设计与应用有指导意义.     

Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point

There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples’ macroscopic homogeneity. We believe that it is helpful to point out some problems related to such measurements. By using experimental examples, we illustrate that the charge inhomogeneity induced by spurious chemical doping or metal contacts can lead to large systematic errors in assessing graphene’s transport properties and, in particular, its minimal conductivity. The problems are most severe in the case of two-probe measurements where the contact resistance is found to strongly vary as a function of gate voltage.     

石墨烯射频器件研究进展

石墨烯因具有优良的电学特性,在半导体行业中受到广泛关注,特别因其具有超薄的结构和极高的载流子迁移率,为解决短沟道效应提供了可能,并且在高速电子领域具有应用前景.近年来,使用石墨烯作为沟道材料制备射频晶体管及射频电路是发挥石墨烯材料优势的一个重要研究方向.制造高性能的射频器件,首先要制备出高性能的石墨烯材料.在金属衬底上沉积均匀的单层石墨烯材料或者在绝缘衬底上外延生长单层、双层石墨烯材料都是获得高质量石墨烯材料的常用方法.器件结构及工艺流程的设计也是提升晶体管射频性能的重要因素,多指栅结构、T型栅结构、埋栅结构以及自对准工艺的发展能够有效改善石墨烯射频晶体管的截止频率及最大振荡频率.石墨烯晶体管独特的电学特性使得其除了可以构造与其他半导体材料电路相似的射频电路结构,还可以构造出功能完整并且结构更加简单的新型射频电路结构.     

多层石墨烯纳米带光电探测器理论与性能分析

多层石墨烯具有超宽的光谱吸收范围及独特的光电性能,是制作下一代光电探测器件的理想材料。以石墨烯的带间隧穿理论为基础,提出了一个多层石墨烯纳米带结构的光电探测器模型,纳米带的两端与源极和漏极相连,夹在半导体基质和上下栅极之间。利用这个模型,建立了多层石墨烯纳米带探测器的光电转换机制,讨论了上栅极电压不同时探测器的工作原理,研究了源-漏极间光电流及暗电流与入射光能量的关系,探讨了探测器的偏置电压,耗尽层长度以及带隙取值对暗电流的影响,并分析了不同参数下探测器响应率以及探测率随入射光能量的变化关系。结果表明,探测器的响应率随纳米带层数的增加而增加,受带隙,耗尽层长度和偏置电压的影响,最大的响应率约为103 A·W-1; 通过限制上栅压,带隙等变量可以控制系统暗电流,增大探测器的探测率,最高探测率约为109 cm·Hz1/2·W-1。多层石墨烯纳米带结构可以增强探测器对入射光的吸收,提高探测器的灵敏度以及对弱光的探测能力,实现对太赫兹到远红外波段入射光的有效探测,探测性能远高于许多量子结构和窄带半导体结构的光电探测器。     

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Self-aligned-gate heterostructure field-effect transistor(HFET) is fabricated using a wet-etching method.Titanium nitride(TiN) is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au cap layer is fixed on the gate and acts as an etching mask.Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H_2O_2 solution at 95 ℃.After treating the ohmic region with an inductively coupled plasma(ICP) method,an Al layer is sputtered as an ohmic electrode.The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 ℃ in N_2 ambient for 1 min.The TiN gate leakage current is only 10~(-8) A after the low-temperature ohmic process.The access region length of the self-aligned-gate(SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET.The output current density and transconductance of the device which has the same gate length and width are also increased.     

Electrical properties of organic field effect transistors with thin graphite/metal electrode directly grown by ICP-CVD at low temperatures

The high contact resistance of organic thin film transistors (OTFTs), due to the work function difference between metal electrode and organic channel, seriously decreases the electrical properties. Graphene electrode could reduce the contact resistance and improve the electrical performance of OTFTs. However, the high chemical vapor deposition (CVD) temperature (900–1000 °C) limits the available OTFT substrate in the case of direct graphene growth on S/D metal electrodes. Furthermore, the application of a transferred graphene electrode induces significant problems due to the transfer process. In this work, thin graphite sheet was directly grown on a metal electrode by the inductively coupled plasma-chemical vapor deposition (ICP-CVD) method at as low temperature as 400, 500 °C. We show that OFETs with thin graphite sheet/metal, grown at 400, 500 °C, exhibit much lower contact resistance than OFETs with metal-only electrode.