Optical amplification of argon excimers in the vacuum ultraviolet spectral region, produced by ultrashort-pulse high-intensity-laser-produced electrons

Optical-field-induced ionization (OFI) electrons were produced in a 30 cm Ar-filled hollow fiber by shining a high-intensity laser into the fiber. By use of such a long plasma with the help of a multilayer dielectric mirror made for 126 nm emission, we observed significant optical amplification of the Ar₂ ^* emission at 126 nm. The optical amplification resulted in a maximum small signal gain coefficient of 0.16 cm^-1 at 126 nm at 10 atm of Ar pressure.     

Stimulated emission of argon dimers excited by a pulsed plasma-cathode discharge

Results are reported from a theoretical and experimental investigation aimed at obtaining lasing on transitions of an Ar₂ excimer laser pumped by a pulsed electric discharge. It is shown that by using a recently developed plasma-cathode discharge, quasi-cw excitation of the laser active medium can be achieved with a gain of around 0.1 cm⁻¹. The results of preliminary experiments performed using a model system indicate an effect wherein the duration of the spontaneous emission at the gl=126 nm transition of the Ar₂ dimer decreases monotonically as its peak intensity increases. This behavior, which is observed with increasing pump intensity, is evidence of a stimulated emission effect in the system. However, the measurements indicate that no amplification takes place in the active medium because of accidental impurities in the working gas. Zh. Tekh. Fiz. 67, 49–52 (November 1997)     

Improved gain for the Ar 2 * excimer laser at 126 nm

Argon was excited by intense electron beam pumping. The optical gain obtainable in Ar ₂ ^2* at 126 nm was investigated as a function of gas pressure and pumping density. The gas pressure necessary to achieve a gain of 10%/cm is reduced from 3.2 to 1.0 MPa if the gas is cooled at 170 K. The effect is partly due to reduced absorption by the removal of impurities. The results allow one a new approach to construct high-power lasers in the vacuum ultraviolet below 150 nm.     

Narrowband emission of argon dimers in a dc discharge with supersonic expansion

Narrowband emission of Ar₂ ^* at 126 nm was observed in a dc discharge with supersonic expansion and cooling of Ar gas through a metallic nozzle. The bandwidth of the excimer emission was 5.7 nm, which was lower than the values reported in the literature. The short bandwidth was attributed to the increased contribution of the singlet excimer state to the emission that could lead to a partial amplification of the radiation. PACS 33.20.Ni; 42.55.Lt; 52.80.Yr     

Luminescence characteristics of ultraviolet upconversion from Er 3 + :YAG crystal by Ar + laser (488 nm) excitation

Ultraviolet and violet upconversion signals at 271 nm, 317 nm, 381 nm and 407 nm were observed when an erbium-doped YAG crystal was pumped by an Ar⁺ laser (488 nm). The dependence of intensity of luminescence emitting from the ⁴S _3/2 state and the ²P _3/2 state on pump power (I) was experimentally investigated. Changes from I¹ down to I ^1/2 for the ⁴S _3/2 state and from I² down to I¹ for the ²P _3/2 state were observed. The upconversion mechanism was discussed by means of the rate equations. It appears that energy-transfer upconversion (ETU) is a dominant process for the Er³⁺:YAG crystal used in our experiment. Received 20 March 2001 and Received in final form 11 July 2001     

Shadowgraphic and emission imaging spectroscopic studies of the laser ablation of graphite in an Ar gas atmosphere

Laser ablation of graphite in an Ar atmosphere at 560 Torr was done using a nanosecond-pulse Nd:YAG laser (1064 nm) at a fluence of 12 J/cm². Dynamics in the ejection of carbon species and in their confinement near the graphite surface (<1 mm) due to their numerous collisions with Ar atoms were investigated by shadowgraphy, emission imaging, and emission spectroscopy at delay times of 0.01-100 7s following the laser irradiation. A shock wave was generated, and temporally and spatially dependent emissions from Ar⁺ and Ar were observed in addition to those from carbon species (C, C⁺, and C₂) and the Bremsstrahlung radiation from a hot plasma. We suggest that the dissipation of the kinetic and thermal energies of the carbon species, their backward motion, and their collisions with each other lead to the formation of clusters and particles through the interaction with Ar atoms.     

Kinetic studies of Ar2F* in fast transverse-discharge-excited He-Ar-F2 mixtures

Time-resolved and time-integrated spectra for various He-Ar-F₂ mixtures excited by a fast transverse discharge were recorded. The fluorescence of ArF^* and Ar₂F^* was investigated and the radiative lifetime and emission characteristics of Ar₂F^* were determined. A mechanism for the formation of Ar₂F^* is suggested.     

Enhanced photoluminescence of Ar implanted sapphire before and after annealing

In this paper, we studied the changes in the photoluminescence spectra of the Ar⁺ ion implanted mono-crystalline sapphire annealed at different atmospheres and different temperatures. Single crystals of sapphire (Al₂O₃) with the (1 0 1¯ 0) (m-samples) orientation were implanted at 623 K with 110 keV Ar⁺ ions to a fluence of 9.5×10¹⁶ ions/cm². Photoluminescence measurement of the as-implanted sample shows a new emission band at 506 nm, which is attributed to the production of interstitial Al atoms. The intensity of emission band at 506 nm first increased then decreased with increase in annealing temperature. For the same annealing temperature, the intensity of PL peak at 506 nm of the sample annealed in air was higher than the sample annealed in vacuum. The experimental results show that the intensity of the PL peak at 506 nm of Ar-implanted sapphire can be enhanced by subsequent annealing with an enhancement of nearly 20 times. The influence of thermal annealing of the Ar-implanted samples on the new 506 nm emission band was discussed.     

Wavelength stabilization of an Ar+ laser with an external129I2 absorption cell

Wavelength stabilization of the green Ar⁺ laser line at 514.5 nm by¹²⁹I₂ absorption was found to be more favourable than by¹²⁷I₂ absorption because the maximum of¹²⁹I₂ absorption is closer to the center of the 514.5 nm gain curve. A simple method for stabilizing a short air cooled laser with only one servo loop is given, yielding a stability of 10⁻⁸ λ.     

Study of the plasmas produced during the deposition of TiC/SiC thin films in a hybrid magnetron-laser system

Time- and spatially-resolved optical emission spectroscopy was performed to characterize the plasma produced in a hybrid magnetron-sputtering-laser deposition system, which is used for TiC or SiC thin films preparation. A graphite target was ablated by a KrF excimer laser (λ=248 nm,τ=20 ns) and either Ti or Si targets were used for DC magnetron sputtering in argon ambient. Spectra were measured in the range 250–850 nm. The evolution of the spectra with varying magnetron powers (0–100 W) and argon pressures (0.3–10 Pa) was studied. Spectra of the plasmas produced by a) the magnetron alone, b) the ablation laser alone, and c) the magnetron and the ablation laser together, were recorded. Spectra (a) were dominated by Ar atoms and Ar⁺ ions. Emission lines of Ti and Si were detected, when Ti target and Si target was used, respectively. Spectra (b) revealed emission of C, C⁺, C₂, Ar, Ar⁺. Spectra (c) showed presence of all previously mentioned species and further of Ti⁺ ions emission was detected. The research was supported by Grant Agency of the Czech Republic No. 202/06/02161, GA ASCR project number A1010110/01 and Institutional Research Plan AV CR No. AV0Z 10100522.     

Development of ultra-short pulse VUV laser system for nanoscale processing

We have developed intense vacuum ultraviolet (VUV) radiation sources for advanced material processing, such as photochemical surface reactions and precise processing on a nanometer scale. We have constructed a new VUV laser system to generate sub-picosecond pulses at the wavelength of 126 nm. A seed VUV pulse was generated in Xe as the 7th harmonic of a 882-nm Ti:sapphire laser. The optimum conversion was achieved at the pressure of 1.2 Torr. The seed pulse will be amplified by the Ar₂^*\mathrm{Ar}_{2}^{*} media generated by an optical-field-induced ionization Ar plasma produced by the Ti:sapphire laser. We have obtained a gain coefficient of g=0.16 cm⁻¹. Our developing system will provide VUV ultra-short pulses with sub-μJ energy at a repetition rate of 1 kHz.     

Ultraviolet upconversion in Pr3+:Y2SiO5 crystal by Ar+ laser (488 nm) excitation

Ultraviolet upconversion fluorescence band (260–350 nm) has been observed from Pr³⁺:Y₂SiO₅ pumped by Ar⁺ ion laser (488 nm). Power dependence of the fluorescence emitted from 4f5d, ³P₀ and ¹D₂ were measured. The upconversion mechanism was analyzed using the rate equations with a simplified three level model. It appears that excited state absorption (ESA) is the dominant upconversion process for lower Pr³⁺ concentration and energy transfer upconversion (ETU) is dominant for higher Pr³⁺ concentration.     

Laser-induced chemical etching of silicon in chlorine atmosphere

Laser-induced chemical etching of single-crystalline (100) Si in Cl₂ atmosphere has been investigated for continuous Ar⁺ and Kr⁺ laser irradiation at around 351 nm, and at 457.9, 488.0, 514.5, and 647.1 nm. For laser irradiances below 10⁵ W/cm² the etching mechanism is non-thermal, and is based on photo-generated electron-hole pairs within the Si surface and Cl atoms produced within the gas phase. The experimental results are compared with model calculations.     

L α emission from Ar++H2 collisions in the threshold energy region

In the energy range 2.4 to 33.3 eV_CM, relative cross sections have been measured forL _α emission from impact of Ar⁺ ions in a beam on a H₂ gas target. Absolute cross sections, obtained by normalization to literature data, are 1–10×10^?16cm² for metastable Ar⁺ and 1–20×10^?18cm² for ground state Ar⁺. In the former case, the dominant mechanism is probably dissociative electronic energy transfer, while in the latter case dissociative charge transfer is the most likely process. In addition, at the lowest energiesL _α resulting from a chemiluminescent rearrangement Ar⁺+H₂→ArH⁺+H(2p) has been observed.     

Time-of-flight investigation of the intensity dependence of laser-desorbed positive ions from SrF2

The intensity dependence of the total and specific yields of positive ions desorbed from SrF₂ under 193 nm and 308 nm excimer-laser irradiation has been investigated by the time-of-flight method. The following positive ion species have been detected: F⁺, Sr⁺, Sr⁺⁺, SrF⁺⁺ and SrF ₂ ⁺ . The Sr⁺ and SrF⁺ emission yields are found to increase as E ⁿ, where E represents the laser energy per pulse. The exponent n is related to defect-initiated neutral particle emission and gas-phase ionization. The influence of surface damage on this power dependence is investigated. The F⁺ emission yield showed a quite different behaviour compared to that of the Sr⁺ and SrF⁺ emission. At both wavelengths the total positive ion emission yields saturate at a certain laser energy. In the saturation regime the SrF⁺ emission vanishes and alternative emission of F⁺ and Sr⁺ was observed at both wavelengths, but the total emission yield in the saturation regime (F⁺ + Sr⁺) remained constant. A Scanning Electron Microscope (SEM) was used to investigate the damage spots after laser irradiation for thermal effects.     

Continuous-wave high-power multi-pass pumped thin-disc Nd:GdVO4 laser

A thin-disc Nd:GdVO₄ laser in multi-pass pumping scheme was developed. Continuous-wave output power of 13.9 W at 1.06 μm for an absorbed power at 808 nm of 22 W was demonstrated from a 250-μm thick, 0.5-at.% Nd:GdVO₄ in a 4-pass pumping; the slope efficiency in absorbed power was 0.65, or 0.47 in input power. Output performances were also investigated under diode laser pumping at 879 nm, directly into the emitting ⁴F_3/2 level: maximum power of 3.6 W was obtained at 6.2 W of absorbed power with 0.69 slope efficiency. Compared with pumping at 808 nm, into the highly absorbing ⁴F_5/2 level, improvements of laser parameter in absorbed power (increase of slope efficiency, decrease of threshold) were obtained, showing the advantages of the pumping into the emitting level. However, the laser performances expressed vs. the incident power were modest owing to the low absorption efficiency at 879 nm. Thus, increased number of passes of the medium would be necessary in order to match the performances in input power obtained under 808-nm pumping.     

Ar+激光激发的LiArA2Ⅱ→X2∑漫射谱发射

用Ar⁺的457.9,476.5,496.5,514.5nm激光激发充有Ar气的Li热管,获得Van der Waal's分子LiAr在650—760nm波长范围A²П→X²∑的漫射发射光谱。讨论了产生这种发射的动力学机制。 关键词：     

Metastable Decomposition of Ar3+ Cluster Ions Into Ar2+ and Ar+

In this note we present the first account of a study of metastable (unimolecular decay) and collision-induced dissociation of Ar₃+ cluster ions using an experimental setup consisting of a molecular beam-electron impact ion source and a double focussing (reversed Nier Johnson geometry) mass spectrometer. The existence of the following metastable decay processes (accessible by our sampling time window) could be demonstrated: Ar₃⁺* → Ar₂+ and Ar₃⁺* → Ar⁺. The processes were studied as a function of electron impact energy. The present results are of importance in order to provide some guidance for the development of appropriate theoretical models for the dissociation of cluster ions.     

Observation of alignment of the ground state of NO<Subscript>2</Subscript> under laser excitation

A Hanle signal is observed in the absorption of a cell filled with nitrogen dioxide NO₂ at room temperature. The excitation was performed by an Ar⁺ laser at a wavelength of 476.4 nm.     

Linewidth studies on the Ar+ 476.5 nm and 480.6 nm lines excited in a helium-agron hollow cathode discharge

The spectral line shapes of the Ar⁺ 476.5 nm and 480.6 nm lines, excited in a He-Ar hollow cathode (HC) discharge, were measured using the Fabry-Perot technique. The collisional and Doppler linewidths were determined for the two lines. The collisional broadening constants are estimated to be (5±3) MHz/mbar and (6±3) MHz/mbar, respectively. The temperature obtained from the two Ar ion transitions was found to be 260 K higher than that expected for the rest of the gas mixture from earlier measurements. The possibility is discussed, that this excess temperature is caused by Ar ions partially created in the HC discharge by charge transfer collisions with He ₂ ⁺ molecules.