Quantum properties of strong accumulation layers on ZnO surfaces

Extremely strong accumulation layers with surface electron densities ΔN approaching 10¹⁴ cm^?1 have been achieved on ZnO surfaces in contact with an electrolyte. Quantization effects, which are very pronounced in such narrow (?10 Å) layers, are studied by measurements of ΔN versus surface barrier height V_s. Comparison of the results with self-consistent calculations shows very good agreement up to ΔN = 2 × 10¹³ cm^?2. Deviations observed at higher ΔN are probably associated with the huge electric fields (～10⁷ V/cm) experienced by the surface electrons.     

A characteristic class of quantities in nonequilibrium thermodynamics and a statistical justification of the local equilibrium approximation

A theory of bandwidth anisotropy in metallic ferromagnets developed previously is specialised to the case of 5d electrons in a hexagonal close-packed lattice. This theory is combined with a model for 5d electrons in the heavy rare earth metals to give a new theory for the low temperature values of the magnetic anisotropy coefficientsκ ₂ ⁰ andκ ₄ ⁰ in Tb, Dy, Ho, Er and Tm. In this theory the magnetic anisotropy is due to a combination of (i) crystal fields acting on 5d and 4f electrons and (ii) bandwidth anisotropy associated with a dependence of 5d bandwidths on magnetization direction. After use is made of empirical upper limits on the eighth order magnetic anisotropy in Gd, there remain four partially adjustable parameters of importance in the theory. These can be chosen to give a good fit to the six observed values forκ ₂ ⁰ andκ ₄ ⁰ in Tb, Dy and Ho. Crystal fields corresponding to negative point charges are seen by 5d electrons, but because of 4f – 5d interactions effective fields of larger magnitude and opposite sign act on 4f shells. Bandwidth anisotropy gives a significant contribution toκ ₄ ⁰ of opposite sign to that due to crystal fields, and dominates the latter in Tb and Er.     

Mössbauer isomer shifts,hyperfine interactions,and magnetic hyperfine anomalies in compounds of iridium

The dependence of the isomer shift of the 73 keVγ-rays of¹⁹³Ir on the oxidation state was studied in a variety of compounds of trivalent and tetravalent iridium as well as in IrF₅ and IrF₆. The observed shifts can be attributed to the sielding effect of the varying number of 5d electrons, but there may be additional direct contributions fromσ-bonding electrons. In the hexahalogen complexes with Kramers-degenerate electronic groundstates magnetically ordered phases were found and studied at temperatures between 0.5 and 4.2 K. Between IrF₆ and tetravalent [IrCl₆]^2? and [IrBr₆]^2? complexes magnetic hyperfine anomalies of up to 10% were observed, which support the presented interpretation of the hyperfine fields in terms of core polarization, orbital and spin-dipolar contributions.     

Magnetic susceptibility and electron spin resonance of the semiconducting mixed crystal V2MoO8 (V2O5 · MoO3)

The transition metal lattice sites of V₂MoO₈ are occupied by vanadium- and molybdenum ions in a disordered way. Our measurements of the magnetic susceptibility and the electric conductivity show that V₂MoO₈ is paramagnetic and semiconducting. The ESR investigations prove the existence of localizedd electrons (Anderson localization). A hopping process of thesed electrons in vanadium 3d orbitals leads to an ESR line narrowing. Above 50 K a line broadening occurs which is interpreted as a shortening of the effective lifetime of the localizedd electrons.     

Untersuchungen zum Stark-Effekt metastabiler Terme im Ba I-Spektrum durch Nachweis von Hochfrequenzübergängen

By detection of r.f.-transitions between Zeeman-sublevels the Zeeman-splitting of the metastable 6s 5d-levels and of the 6s 6p³ P ₁-level of the even Ba-isotopes was investigated under the influence of an electric field in addition to a magnetic field. From the measurements the following tensor polarizabilities were deduced: α_ten(³D₃)=?29(5) kHz/(kV/cm)², α_ten(³ D ₂)=?13(3) kHz/(kV/cm)², α_ten(³D₁)=?10(2) kHz/(kV/cm)², α_ten(¹ D ₂)=?16(3) kHz/(kV/cm)². No effect due to electric fields up to 50 kV/cm was observed in the Zeeman-splitting of the 6s 6p ³ P ₁-level. Therefore the tensor polarizability of the 6s 6p³P₁-level must be much smaller than those of the 6s 5d-levels. The results will be discussed by considering the oscillator strengths both of the infrared transitions between the two multiplets 6s 5d ³ D and 6s 6p ³ P and of transitions to other low lying levels.     

Low-temperature transport properties of individual SnO2 nanowires

Stannic oxide (SnO₂) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO₂ nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation lnR∼T^−1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears.     

“Crystal fields” for magnetic ions in metals from itinerant electrons

The interaction of conduction electrons with host ions are shown to give rise to “crystal fields”, V_C, which act on the magnetic ion in some dilute magnetic alloys. Crystal fields, V_N, arising directly from ions neighbouring the magnetic ion have been compared with V_C to show that the overall crystal field splitting from all 3d magnetic ions in axial symmetries is enhanced by the p-like character of V_C. A⁰₄〈r⁴〉 from V_N is also increased by the d-component of V_C. The angular properties of itinerant electron states give rise to the above results. For all rare-earth ions in fcc symmetry the radial and angular components of conduction-electron states with mainly d, but also f character, are shown to give rise to a reversal in sign of A⁰₄〈r⁴〉 from V_N. A⁰₆〈r⁶〉 is enhanced by the f component of the conduction electrons.     

Quasielastic transfer reactions in 238U + 197Au and 197Au + 197Au collisions near the Coulomb barrier

Differential cross sections as a function of cm angle were measured for 1n- and 2n-transfer reactions in ²³⁸U + ¹⁹⁷ Au and¹⁹⁷ Au + ¹⁹⁷ Au collisions in the energy range from 0.881 V_c to 1.093 V_c and 0.825 V_c to 0.964 V_c, respectively. For ¹⁹⁸Au and ¹⁹⁹Au from the ²³⁸U + ¹⁹⁷Au collisions, for reduced distances of closest approach d _o 1.55 fm, the angular distributions at all bombarding energies are well described by the semiclassical theory. Equivalently, the transfer probabilities show the expected exponential decrease with increasing d _o over many orders of magnitude. For all other transfer products from ²³⁸U + ¹⁹⁷Au collisions, and for all transfer products from ¹⁹⁷Au + ¹⁹⁷Au collisions, markedly reduced cross sections relative to the semiclassical theory are observed for central collisions at all bombarding energies, even for values of d _o that are well outside the region where absorption is known to set in. Only for the more peripheral collisions, one observes agreement of the angular distributions (transfer probabilities) with the semiclassical expectations. The deviations for central collisions are absent for reactions with positive Q _gg values and scale roughly with increasingly negative values of Q _gg, i.e. with increasing Q-value mismatch. Channel coupling is proposed as the relevant mechanism.     

Magnetic susceptibility and nuclear magnetic resonance of vanadium sulfides

Measurements of the magnetic susceptibility in the temperature range 4–1000°K are reported for the vanadium sulfides VS, V₃S₄-V₂S₃ and V₅S₈. At higher temperatures the susceptibility of all compounds approaches a constant, positive value, indicating a Pauli-paramagnetic contribution of itinerant electrons. At lower temperatures an increase of the susceptibility is observed. This effect is particularly pronounced in V₅S₈, and is taken as evidence for the presence of localized magnetic moments.Nuclear magnetic resonance spectra of V₅S₈ show two lines, one with a temperature-independent Knight shift, and one with a positive Knight shift which increases strongly at lower temperatures. The two lines are attributed to vanadium atoms with itinerant d electrons, and to vanadium atoms with localized d electrons, respectively. This interpretation is consistent with the magnetic susceptibility data. The difference in properties between two types of vanadium atoms in V₅S₈ can be understood by considering the crystal structure.     

Covalent distribution of spin in V2O3:O17 nuclear resonance

O¹⁷ nuclear magnetic resonance has been observed in metallic V₂O₃ with frequency shifts from (?0.10 ± 0.02)-(?0.05 ± 0.02) per cent between 170 and 460°K respectively, a linewidth of 37 ± 5 oe and spin-lattice relaxation rate 1/T₁ ≈ 60 sec^?1 at 296°K. From these quantities, covalency parameters f_s/2S = ? 0.35 × 10^?3 and ?_π/2S ≈ ? 0.07 are calculated. One of the two vanadium 3d electrons in the antiferromagnetic state below the 170°K metal-insulator transition is inferred to lie in a non-magnetic state, while covalent charge transfer augments the spin moment of the other 3d electron to the observed 1.2 μ_B.     

Perturbation of the Laplacian supported by null sets,with applications to polymer measures and quantum fields

We discuss hamiltonians in L²(R^d, dx) of the form H = ?Δ + V, with V a potential supported by a zero measure set C. In particular if C is a path of a brownian motion b such that V(x) = ∫₀¹λ(x, ω)δ(x-b(s, ω)) ds, we show that H exists as a nontrivial, self-adjoint, lower bounded perturbation of ?Δ when d ?5. We must choose λ to be an infinitesimal, negative function for d = 4,5, but for d ? 3 any bounded real-valued function λ will do. The connection with Edward's model of polymers as well as with quantum fields of the ?_d⁴-type is also discussed. The proofs use methods of nonstandard analysis.     

M4,5N4,5N4,5 auger electron spectrum of Ba metal

The Al Kα excited M_4,5N_4,5N_4,5 Auger spectrum of Ba has been measured from the metallic sample evaporated on a Ag substrate. The spectrum has been decomposed into individual line components after the background subtraction. The decomposed spectrum has been compared with the theoretical spectrum calculated for the 4d^?2 final state configuration in the mixed coupling scheme applying jj-coupling for the initial state and intermediate coupling for the final state. The most prominent structure of the spectrum shows the two 4d-hole coupling, but the structure which is caused by the Auger transitions M_,45N_2,3V has also been observed. The screening of the core holes in Ba metal seems to be produced by (5d6s) electrons. The simple excited atom model HF-calculations give an Auger kinetic energy shift (metal-free atom) of 16.7 eV, which is comparable to the experimental value 14–18 eV.     

Interlayer tunneling spectroscopy of graphite at high magnetic field oriented parallel to the layers

Interlayer tunneling in graphite mesa-type structures is studied at a strong in-plane magnetic field H up to 55 T and low temperature T = 1.4 K. The tunneling spectrum dI/dV vs. V has a pronounced peak at a finite voltage V ₀. The peak position V ₀ increases linearly with H. To explain the experiment, we develop a theoretical model of graphite in the crossed electric E and magnetic H fields. When the fields satisfy the resonant condition E = vH, where V is the velocity of the two-dimensional Dirac electrons in graphene, the wave functions delocalize and give rise to the peak in the tunneling spectrum observed in the experiment.     

Spin-wave resonance in Co/Pd magnetic multilayers and NiFe/Cu/NiFe three-layered films

The spectrum of standing spin waves has been detected by the ferromagnetic resonance method in NiFe(740 Å)/Cu/NiFe(740 Å) three-layered film structure in the perpendicular configuration for the copper thickness d _Cu ≤ 30 Å. At thicknesses d _Cu > 30 Å, the resonance absorption curve is a superposition of two spinwave resonance spectra from individual ferromagnetic NiFe layers. For Co/Pd multilayer films, united spinwave responance spectra have also been observed at thicknesses of the paramagnetic palladium layer up to d _Pd < 30 Å. The partial exchange stiffness has been calculated for a spin wave propagating across the Pd layer (A _Pd = 0.1 × 10^?6 erg/cm). This value is always positive (up to the critical thickness of the palladium interlayer d _Pd < d _c) or equal to zero (d _Pd > d _c).     

Hot́ hole anisotropic effect in silicon and germanium

Anisotropic effect of the hole drift velocity in silicon and germanium has been investigated with the time of flight technique by applying the electric field parallel to the <100 and <111 crystallographic axis. The measurements were performed for electric fields ranging from 10 to 3 × 10⁴V/cm and temperatures from 40 to 200°K. The results indicate that the anisotropic effect v_d<100/v_d<111 increases with decreasing temperature and increasing electric field, and reaches a saturation value at high electric fields (? 10⁴V/cm). The maximum anisotropic effect for Ge is 1.25 at 40°K and for Si is 1.2 at 45°K. A qualitative analysis of the experimental data indicates that the anisotropic effect is due to the warped heavy-valence-band shape.     

Second-forbidden beta-decay and the effect of (V+A)- andS-interaction admixtures:36Cl

The shapefactor, the logft-value, the electron longitudinal polarization and the distribution of electrons emitted from oriented nuclei of³⁶Cl have been calculated by applying two different nuclear models. Firstly a pure 1d_3/2→1d_3/2 transition has been considered. Secondly a more refined shell model of thes-d shell configuration space has been taken into account. It is shown that there is no great influence of the shell model version to the observables, that the observables depend strongly on the relativistic nuclear matrix elements, that the so-called “two parameter equation” for the shapefactor cannot be used in the case of³⁶Cl and that there is no larger sensitivity of (V+A) admixtures to the electron longitudinal polarization than normally found in allowed decays. Comparisons with the existing experimental data are made.     

Quantum oscillations in an inversion layer on p-PbTe

We report the observation of a variable density inversion layer on p-PbTe. The carriers in the inversion channel are found to have a mobility on the order of 250,000 cm² V^-1 sec^-1. Shubnikov-de Haas oscillations in the channel conductivity were measured in magnetic fields up to 6 T. From the observed periodicity we conclude that the oscillations represent only a fraction of the total number of electrons in the channel.     

Effect of high electric field on the dc conduction of TeO2-V2O5-MoO3 amorphous bulk material

Effect of high electric field on the dc conductivity of TeO₂-V₂O₅-MoO₃ amorphous bulk samples with different molar ratio of each component was investigated with gap-type electrode arrangement. At low electric fields, the current-voltage (I–V) characteristics has a linear shape, while at high electric fields (>10³ V/cm), bulk samples show nonlinear behavior (nonohmic conduction) and current-voltage characteristics shows increasing deviation from Ohm’s law with increasing current density. High-field effect of Pool-Frenkel type was observed at electrical fields about 10³−10⁴ V/cm. In addition, positive deviation from Pool-Frenkel effect was observed when a field higher than about 10⁴ V/cm was applied.     

Improved critical current capability of V3Ga formed in a V-6Ga/Cu-15 Ga composite

Single filament V₃Ga composite wires were prepared by imbedding cores of pure V and V-6.1 at.% Ga in a Cu-15.4 at.% Ga matrix. The parabolic growth rate of V₃Ga was enhanced by alloying the core, and the superconducting critical current density was nearly doubled. At 4.2 K J_c exceeded 10⁵ A/cm² in transverse magnetic fields up to 140 kG.     

EPR measurements on chromium doped GaAs,GaP and InP

EPR measurements have been made on chromium doped GaAs samples at 4.2 K. An n-type sample doped with chromium and silicon was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr⁺ (3d⁵) was detected, although the Cr_s²⁺ spectrum was observed. The generally accepted assignment of a spectrum to Cr_s⁺ for photoexcited samples must therefore be revised. An isotropic resonance with g = 2 is observed in p-type chromium doped GaAs, GaP and InP but it is still not clear whether this is due to Cr_s⁴⁺ or interstitial Cr_i⁺ (3d⁵).