极性晶体电气石颗粒的电极性观察

利用扫描电子显微镜(SEM)、电子探针(EPA)、浮选烘干等手段研究了黑色电气石粉体的带电性质.从电气石粉体的扫描电镜照片中发现,电气石颗粒间存在吸引与排斥;在电子探针研究中,首次直接观察到了电气石颗粒的自发极化产生的电极性.电子束轰击电气石微米颗粒后的显微照片中,轰击区域呈现半明半暗形貌,这种形貌反映了电气石颗粒自发极化的存在.并讨论了电气石颗粒表面电场.     

电气石表面TiO2微孔空心球簇的制备及光催化活性研究

用溶胶-凝胶技术在紫铜表面制备含电气石矿物粉末的TiO2复合薄膜,研究薄膜的制备方法、显微结构及其光催化活性.用SEM技术研究电气石-TiO2复合薄膜的微观结构和电气石表面TiO2的显微结构,测量了TiO2空心球直径、TiO2空心球簇大小,同时用电子探针对电气石-TiO2复合薄膜中的TiO2空心球簇表面及球簇周围TiO2膜进行了成分分析;并用电气石/TiO2复合薄膜光催化降解甲基橙水溶液,研究电气石对TiO2薄膜光催化活性的影响.结果发现,紫铜表面上电气石微粒均匀分布在TiO2薄膜中,且在电气石微粒表面可形成TiO2微孔空心球和微孔空心半球构成的微孔空心球簇,空心球和空心半球的平均粒径为2μm;经紫外线照射180min后,与不含电气石的TiO2薄膜相比,含电气石0.5;的TiO2复合薄膜对甲基橙的光催化降解率可提高31.9;,电气石可以明显提高TiO2薄膜的光催化活性.     

利用静电聚苯乙烯纳米微粒对LiNbO3铁电畴结构的观测

利用静电聚苯乙烯纳米微粒缀饰技术,在铁电晶体铌酸锂(LiNbO3)的极性表面观察到铁电畴表面束缚电荷吸附带异性电荷纳米小球所形成的衬度图像,正负电畴衬度图像清晰稳定.这种对铁电晶体表面电畴结构进行表征的新方法不会对样品造成任何程度的损伤和破坏,操作简便易行,并具有较高的分辨率.     

电气石对硅藻土基多孔陶瓷孔结构与孔雀石绿脱色效果的影响

以硅藻土为主要原料,采用固相烧结法和低温煅烧工艺,制备了硅藻土基多孔陶瓷.着重考察了电气石对材料的微观结构、孔径分布等材料孔结构及孔雀石绿溶液脱色能力的影响,通过扫描电镜、压汞仪等手段对不同电气石含量的硅藻土基多孔陶瓷进行了表征.结果表明:当电气石含量为12;时,材料内孔径细小,平均孔径最小177.5 nm,比表面积最大6.83 m2/g;电气石含量由0提高到16;,材料的孔隙率由49.3;降至36.5;,对孔雀石绿溶液的脱色能力逐渐增强.当电气石含量为16;时,反应6 h后,412 nm与618 nm处吸收峰消失.     

升华法制备m面非极性-AlN单晶体的研究

AlN晶体在c轴方向具有很强的自发和压电极化效应,影响了其器件的性能.生长高质量的非极性面AlN晶体材料是解决该问题的有效途径.本研究结合AlN晶体沿c轴择优生长的特点,使用自行设计的双区电阻加热生长装置,升华制备出尺寸为厘米级m面非极性AlN单晶体,并利用X射线衍射和能谱对样品进行测试分析.实验结果表明AlN单晶体的方向为(100),铝和氮原子比例为50.3;和49.7;,接近理想比例1∶1.最后,对m面非极性AlN单晶体的形成机理进行探讨.     

PVT法钨坩埚系统中自发生长自支撑AlN单晶及其表征分析

采用物理气相传输(PVT)法在AlN原料表面自发生长出大量毫米级尺寸的AlN单晶.本文对该工艺下AlN单晶的自然形貌、极性、杂质含量等进行了分析.实验及分析结果表明,在实验工艺条件下,原料表面生长的AlN晶粒具有规则的六方外形,晶粒沿C向择优生长且具有高的生长速率(约200～ 250 μm/h),但径向生长受限于{10-10}(m面).不同颜色的AlN晶粒经机械切割及化学机械抛光(CMP)后,形成高表面质量的C轴取向抛光片.通过化学湿法腐蚀和SEM表征发现,淡黄色晶粒为Al极性晶体,暗棕色晶粒为N极性晶体,淡黄-暗棕混合色晶粒为Al/N混合极性晶体,其内部可以观察到清晰的两种极性分界.通过GDMS与EGA对不同颜色晶粒内部的主要杂质元素含量进行了分析,结果表明,淡黄色晶粒内氧元素的含量相比暗棕色晶粒的含量低,而碳含量则相反.     

La掺杂TiO2/电气石的制备及光催化性能研究

以电气石为载体,TiCl4为前驱体,采用水解沉淀法负载La掺杂纳米TiO2薄膜,制备La掺杂TiO2/电气石复合材料.结合XRD、FESEM、UV-vis等现代测试手段对所制备样品的结构和性能进行了表征.以甲醛为目标降解物,考察了样品的光催化活性.结果表明:La掺杂TiO2晶粒细小,均匀分布于电气石表面.经550℃煅烧,La掺杂后锐钛矿型TiO2粒径由13.5 nm降为8.73 nm.La掺杂后,TiO2光催化剂的吸收光谱向可见光区发生红移.1m3环境舱内,日光灯下照射360 min,La掺杂TiO2前后复合材料对甲醛的去除率分别达到66.4;和82.2;.     

Sc2O3对水热法生长ZnO晶体的影响

在分别添加0.1wt;,0.2wt;和0.3;wt; Sc2O3的水热体系中得到了ZnO单晶体.研究了杂质,特别是Sc对ZnO水热生长机制的影响.Sc及其在碱性溶液中形成阴离子配位中间体基团(例如Sc(OH)4)可以吸附到ZnO的(0001)和(0001)面,导致这两个极性面发生非极性生长,形成规则六棱柱的形貌.在室温下测得的电阻率和载流子浓度显示:即使所得晶体的钪含量仅有8 ～ 13 ppm,Sc掺杂ZnO仍是高导电性的,电阻率低于5.6×10-2 Ω·cm,载流子浓度在0.9～1.6×1018electrons/cm3.表征了切割自+c区和-c区的晶片的Zn面和O面的室温光致发光用于评价光学性能.     

GaN基三维结构生长与器件应用

目前,c面氮化镓(GaN)基发光二极管的制备技术已经十分成熟并取得了商业化成功,但仍面临极化电场导致的大电流密度下效率下降(Droop效应)和黄绿光波段效率低的问题.为消除极化电场的影响,人们开始关注半极性和非极性面GaN.其中,基于传统极性面衬底通过三维结构生长来获得半极性和非极性GaN的方法,由于其低成本和生长的灵活性,受到了广泛研究.本文首先总结了三种GaN三维结构的制备方法并分析其生长机理.接着,在此基础上介绍了不同晶面InGaN量子阱的外延生长和发光特性.最后,列举了GaN基三维结构在半极性面LED、颜色可调LED和无荧光粉白光发光二极管方面的应用.     

PAN/TiO2复合微粒的制备与表征

采用沉淀法合成聚丙烯腈(PAN),并通过化学吸附法制备得到PAN/TiO2纳米复合微粒.采用透射电镜(TEM)、X射线衍射(XRD)、红外光谱(IR)、X射线光电子能谱(XPS)、紫外可见漫反射吸收光谱(DRS)等方法对复合微粒的结构和性能进行了分析表征.结果表明,复合微粒的形貌、晶型和粒径和纯二氧化钛比较基本没有发生改变;PAN/TiO2纳米复合微粒在可见光区的光吸收能力增强.对甲基橙降解实验研究结果表明,所制备的PAN/TiO2纳米复合微粒具有良好的光催化降解性能,其14 h对甲基橙的降解去除率可以达到86.5;.     

Ion-beam deposition of tourmaline film on glass

Ion-beam deposition of tourmaline on glass substrate was investigated. X-ray fluorescence has been used to characterize surface composition of glass before and after deposition. The surface morphologies of glass were investigated by atomic force microscope. The crystallographic properties of the prepared films were evaluated by X-ray diffraction. Fourier infrared spectroscopy was used to determine infrared transmission. It is concluded that symmetrical island structure tourmaline film can be deposited on the glass substrate. The average size of the tourmaline grain is about 1 μm.     

自发形核生长的AlN单晶湿法腐蚀研究

采用湿法腐蚀工艺,使用熔融态KOH和NaOH作为腐蚀剂,对一种物理气相传输(PVT)自发形核新工艺在2100~2250 ℃条件下生长的AlN单晶进行了腐蚀实验.通过实验及扫描电子显微镜(SEM)结果分析,得到了典型的AlN单晶c面、r系列面及m面最佳的腐蚀工艺参数及腐蚀形貌.另外,基于腐蚀形貌分析,发现了采用该自发形核新工艺生长的AlN晶体某些独特习性并计算出AlN单晶腐蚀坑密度(EPD).     

(Ga,Ge)-Analogue of Tourmaline: Crystal Structure and Composition

Crystallography Reports - Crystals of a (Ga,Ge)-analogue of tourmaline have been synthesized by hydrothermal method in the temperature range of 600–650°C under a pressure of 100 MPa. The...     

Improved determination of fcc/bcc orientation relationships by use of high‐indexed pole figures

The use of variants to analyze fcc/bcc orientation relationships is demonstrated by EBSD data. Because of multiply occupied poles in the stereographic projections low indexed pole figures are not always suitable. This is mostly caused by the convolution of all scattered individual orientation data as the single poles cannot resolved in the pole figure. Pole figures of higher indexed lattice planes more reliably reflect the character of the orientation relationship since no overlapping of poles occurs. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Biphenyl-based liquid crystal precursors with alkanoate and hydroxyl group

We synthesized a series of 4′-hydroxy-[1,1′-biphenyl]-4-yl alkanoate with a potentially reactive functional hydroxyl group as a LC precursor, which facilitates reaction with other chemical groups to tailor biphenyl-based liquid crystals (LCs) for specific applications. Several liquid crystalline materials were also synthesized based on these LC precursors to show high probability to generate various potential LCs. With increasing chain length, the melting point decreased and R_f (retardation factor: migration distance of substance ÷ migration distance of solvent front) of the synthesized LC precursor increased. This LC precursor series provides a useful first synthesis step to design tunable biphenyl/ester-based LCs.     

Electron paramagnetic resonance and raman spectroscopy characterization of diamond films fabricated by HF CVD method

Thin polycrystalline diamond films were synthesized on silicon substrate by Hot Filament Chemical Vapor Deposition (HF CVD) technique from a mixture of hydrogen and different content of methyl alcohol. A comparative study on the Electron Paramagnetic Resonance (EPR), Raman spectroscopy and Scanning Electron Microscopy (SEM) were performed. It was shown that EPR signal, Raman spectra and morphology, studied by SEM, strongly depend on the ratio of CH₃OH/H₂ in the HF CVD reactor. The peak‐to‐peak line‐width in EPR signal varies from 0.09 to 0.8 mT depending on diamond quality. The Raman spectra of our diamond film showed, except well defined diamond Raman lines positioned at 1332 cm^‐1 with different Full Width at Half Maximum (FWHM), a broad band having maximum at around 1530 cm^‐1 which is characteristic for amorphous carbon phase. The obtained results show that EPR, SEM and Raman spectroscopy yield complementary results about the defects present in CVD diamond films. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

SEM Observation of Nucleation and Growth of Ag Crystallites on Graphite Substrate

“In-Situ” observation of nucleation and growth of Ag crystallites on graphite substrate by vapour deposition was carried out by scanning electron microscope (SEM). Irradiation of the SEM electron beam onto the substrate surface before and during deposition enhanced Ag nucleation. The density of the Ag crystallites was 10¹⁰/cm² in room temperature condensation, but decreased to 10⁹/cm² in high temperature condensation at 140 °C. When the substrate was heated after room temperature condensation, the density of the Ag crystallites decreased prominently. This means that coalescence of the Ag crystallites takes place as a result of their migration on the substrate.     

Crystallization of silicon thin films by current‐induced joule heating using a tungsten overcoat

A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco‐etch, transmission electron microscopy (TEM), and x‐ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1‐0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron‐migration effect near the electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Analysis of the growth of RF sputtered ZnO thin films using the optical reflective second harmonic generation

Reflective second harmonic generation (RSHG) is used to analyze the growth condition of poly crystal zinc oxide (ZnO) film with a c-axis orientation, grown on the Si substrate by RF magnetron sputtering technique. It elucidates physical phenomena exhibited by growing ZnO thin films. Connecting with analytical results of the characteristic parameters derived from the X-ray patterns and SEM images, the relationship between the RSHG intensity and the substrate temperature reveals that the effect of the grain boundaries is the domination of the RSHG mechanism. The inclined structures of ZnO films on the Si substrate are explained with reference to these RSHG patterns.