XRD and AFM studies of ZnS thin films produced by electrodeposition method

The structure and morphology of ZnS thin films were investigated. ZnS thin films have been grown on an indium tin oxide glass substrate by electrodeposition method using zinc chloride and sodium thiosulfate solutions at room temperature. The X-ray diffraction patterns confirm the presence of ZnS thin films. From the AFM images, grain size decreases as the cathodic potential becomes more negative (from ?1.1 to ?1.3 V) at various deposition periods. Comparison between all the samples reveals that the intensity of the peaks increased, indicating better crystalline phase for the films deposited at ?1.1 V. These films show homogeneous and uniform distribution according to AFM images. On the other hand, XRD analysis shows that the number of ZnS peaks increased as deposition time was increased from 15 to 30 min at ?1.1 V. The AFM images show thicker films to be formed at ?1.1 V indicating more favourable condition for the formation of ZnS thin films.     

Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

The influence of local structure of nanocrystalline Ni films on the catalytic activity

The aim of our investigation was to study the influence of the nanoparticles size (the local structure) in sputter deposited Ni films on hydrogen evolution kinetics. The grain size of Ni-particles (11–100 nm) was controlled by the substrate temperature (from 35 °C to 300 °C). The dependence of the kinetic parameters on the temperature at which the films were deposited was measured in alkaline solution by electrochemical impedance spectroscopy (EIS). It correlates well with the change of the ratio between the nanocrystalline and non-homogenous disordered fraction of the nc-Ni film observable by Grazing incidence small angle X-ray scattering (GISAXS) analysis and ascribed to the intercrystalline matter. The catalytic activity of nanocrystalline nickel (nc-Ni) on the hydrogen evolution reaction (h.e.r.) is markedly greater at larger fraction of the spherical inhomogeneities inside the film. This effect is especially strongly pronounced for the nc-Ni films prepared on the substrates at lower temperatures.     

Substrate dependent structure and in-plane dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films

The structure, microstructure and in-plane dielectric properties of Barium tin titanate Ba(Sn_0.15Ti_0.85)O₃ (BTS) thin films grown on (100) LaAlO₃ (LAO) and (100) MgO single crystal substrates through sol–gel process were investigated. The films deposited on (100) LAO substrate exhibited a strong (100) preferred orientation while the film deposited on (100) MgO substrate showed polycrystalline structure. The in-plane ɛ–T measurements reveal that the films grown on (100) LAO substrate exhibited an obvious room-temperature ferroelectric state, while the film grown on MgO substrate showed paraelectric state in the temperature range of 10–130 °C. A high tunability of 52.11% was observed for the BTS films deposited on (100) LAO substrate at the frequency of 1 MHz with an applied electric field of 80 kV/cm, which is about two times larger than that of the BTS films deposited on (100) MgO substrate. The obvious differences in the dielectric properties could be attributed to the stress in the films, which come from lattice mismatch and difference in the thermal expansion coefficients between the film and substrates. This work clearly reveals the highly promising potential of BTS films for application in tunable devices.     

Synthesis of Bi/Sr doped zinc sulphide by spray pyrolysis technique: Effects of doping tempertures on solar cell application

With the aim of determining the best synthesizing substrate temperature that will improve the optical properties of Bi/Sr doped ZnS thin film, spray coated Bi/Sr doped ZnS thin films were deposited at a varying glass substrate temperature of 200 °C–350 °C using an interval of 50 °C. A constant volume of 40 ml of precursor solution was created by adding 10 ml of each of the following solutions: 0.045 M solution of zinc acetate dihydrate C4H6O4Zn.2H2, 0.1 M solution of thioacetamide CH3CSNH2, 0.02 M solution of bismuth nitrate Bi(NO3)3.5H2O, and 0.07 M solution of Strontium hydroxide Sr(OH).₂. UV–Visible Spectrophotometry, scanning electron microscope (SEM), EDX, X-ray diffraction (XRD), photoluminescence, and Fourier transform infrared (FTIR) were all used to investigate the samples. 53.84 and 193.26% increment in carrier concentration and mobility, a 36.36% and 17.77% reduction in resistivity, and a band gap were obtained at a doping temperature of 300 °C. An open-circuit voltage (Voc) of 0.30 V and a power conversion efficiency of 0.58% were achieved. It was established that a doping temperature of 300 °C on Bi/Sr doped ZnS thin films can be used to lower the band gap of ZnS for solar cell applications.     

Synthesis of ZnS nanoparticles from pyridine adducts of zinc(II) dithiocarbamates

Zn(thqdtc)₂, Zn(thqdtc)₂(py) and Zn(thiqdtc)₂(py) (where thqdtc = 1,2,3,4-tetrahydroquinolinecarbodithioate, thiqdtc = 1,2,3,4-tetrahydroisoquinolinecarbodithioate and py = pyridine) have been used as single source precursors for the synthesis of ZnS nanoparticles. The formation of ZnS nanoparticles was achieved by thermal decomposition of the complex under heating in presence of triethylenetetraamine. Transmission electron microscopy, energy dispersive X-ray analysis (EDAX) and powder X-ray diffraction studies were carried out to study the structure and morphology of the nanoparticles. The optical properties of the ZnS nanoparticles were studied by UV–visible and fluorescence emission spectral studies. UV–visible absorption spectral studies indicate a blue shift in the absorption maxima due to the quantum size effect. A single crystal X-ray analysis was carried out for a precursor [Zn(thqdtc)₂].     

Fe-doped SnO2 transparent semi-conducting thin films deposited by spray pyrolysis technique: Thermoelectric and p-type conductivity properties

In this paper, we report structural, electrical, optical, and especially thermoelectrical characterization of iron (Fe) doped tin oxide films, which have been deposited by spray pyrolysis technique. The doping level has changed from 0 to 10 wt% in solution ([Fe]/[Sn] = 0–40 at% in solution). The thermoelectric response versus temperature difference has exhibited a nonlinear behavior, and the Seebeck coefficient has been calculated from its slope in temperature range of 300–500 K. The Hall effect and thermoelectric measurements have shown p-type conductivity in SnO₂:Fe films with [Fe]/[Sn] ≥ 7.8 at%. In doping levels lower than 7.8 at%, SnO₂:Fe films have been n-type with a negative thermoelectric coefficient. The Seebeck coefficient for SnO₂:Fe films with 7.8 at% doping level has been obtained to be as high as +1850 μV/K. The analysis of as-deposited samples with thicknesses ～350 nm by X-ray diffraction (XRD) and scanning electron microscopy (SEM) has shown polycrystalline structure with clear characteristic peak of SnO₂ cassiterite phase in all films. The optical transparency (T%) of SnO₂:Fe films in visible spectra decreases from 90% to 75% and electrical resistivity (ρ) increases from 1.2 × 10^?2 to 3 × 10³ Ω cm for Fe-doping in the range 0–40 at%.     

Direct electrodeposition of PbTe thin films on n-type silicon

High quality lead telluride thin films were directly deposited onto n-type silicon (1 0 0) substrates by electrodeposition at room temperature. The deposition mechanism was studied using cyclic voltammetry. The films were characterized by scanning electron microscopy, energy dispersive X-ray, X-ray diffraction, and Fourier transform infrared spectroscopy. The results indicated that the deposited PbTe films exhibited a polycrystalline rock salt structure and good optical properties with a direct band gap of 0.31 eV.     

Effect of Hg2+doping and of the annealing temperature on the nanostructural properties of TiO2 thin films obtained by sol–gel method

This work is a study of Hg²⁺-doped TiO₂ thin films deposited on silicon substrates prepared by sol–gel method and treated at temperatures ranging between 600 to 1000 °C for 2 h. The structural and optical properties of thin films have been studied using different techniques. We analyzed the vibrations of the chemical bands by Fourier transform infrared (FTIR) spectroscopy and the optical properties by UV–Visible spectrophotometry (reflection mode) and photoluminescence (PL). The X-ray diffraction and Raman spectra of TiO₂ thin films confirmed the crystallization of the structure under the form of anatase, rutile, mercury titanate (HgTiO₃) as a function of the annealing temperature. The observation by scanning electron microscopy (SEM) showed the changing morphology, with respect to nanostructures, nanosheets, nanotubes, with the annealing temperature. The diameters of nanotubes ranged from 50 nm to 400 nm. The photoluminescence and reflectance spectra indicated that these structures should enhance photocatalytic activity.     

Carbon based Si- and Cr-containing thin films: Chemical and nanomechanical properties

Si- and Cr-containing C films were deposited by magnetron sputtering combined with CVD onto silicon wafers. The composition and chemical structure were characterized by X-ray Photoelectron Spectroscopy (XPS) and nanomechanical properties by depth-sensing hardness and scratch techniques.The incorporated Si and Cr are preferentially bonded to carbon, in accordance with simplified thermodynamic calculations and as manifested by the XPS chemical shifts. At relatively high Cr- and low Si-content silicides (Cr_xSi) may also form as indicated by X-ray induced Auger electron spectroscopy. The chromium content in the C–Si–Cr films varied between 1 and 55 at% while the silicon content in the same films between 25 and 0 at%. For comparison two-component films of Si–C and Cr–C were also deposited with Si-content up to 42 at% and Cr-content up to 55 at% by varying the input power of the magnetrons.The nanohardness (H) and reduced modulus (E) were higher for all the films than that of the silicon substrate being 10 GPa, 127 GPa, respectively. Interestingly, the H and E of the three-component CrSiC films were almost invariant of the changes of the components' concentration within the indicated range and varied between 13–16 GPa and 120–140 GPa. H and E values for the two-component Cr–C films were much higher, reaching about 22 GPa and 170 GPa, respectively.     

Preparation and characterization of transparent conducting ZnS:Al films

Al-doped ZnS films were deposited using close-spaced evaporation of the powders synthesized by chemical precipitation method. The films were prepared for different Al concentrations in the range 0–10 at.% on glass substrates kept at 300 °C. The effect of Al-doping on ZnS composition, microstructure and optoelectronic properties of as-grown ZnS layers was determined using appropriate techniques. The films were polycrystalline and showed (111) preferred orientation for all the doping concentrations in spite of an additional phase of Al₂S₃ observed at higher dopant levels. The surface morphological studies indicated that the Al incorporation had a considerable effect on the surface roughness of the films. The optical measurements indicated that the optical energy band gap decreased slightly with the increase of dopant concentration without affecting the optical transmittance characteristics significantly. The electrical analysis indicated that the resistivity of the layers changed significantly with the doping concentration in the layers. The change of photoluminescence behaviour of the as-grown ZnS:Al films with dopant concentration was also studied.     

Effect of negative substrate bias on HWCVD deposited nanocrystalline silicon (nc-Si) films

The influence of the negative substrate bias on the interfacial and microstructural characteristics of nanocrystalline silicon (nc-Si) thin films was deposited by hot wire chemical vapor deposition (HWCVD). Structural characterization of nc-Si films was performed by small angle X-ray diffraction (SAXRD), Raman spectroscopy, X-ray reflectivity (XRR) and field emission scanning electron microscopy (FESEM). Crystalline fraction and crystallite size increases from 61.31 to 74.13% and 13.3 to 21.6 nm, respectively, with an increasing negative bias from 0 to ?200 V. Furthermore, the deposition rate of nc-Si films increases from 25 to 68 nm/min by increase of negative substrate bias from 0 to ?200 V.     

Structural and optical properties of sprayed Zn1−xMnxO films

In recent years the dilute magnetic semiconductors have received much attention due to the complementary properties of semiconductor and ferromagnetic behaviour. Zn_1−xMn_xO thin films have been synthesized by chemical spray pyrolysis at a substrate temperature of 400 °C with different manganese compositions that vary in the range, 0.0 ≤ x ≤ 0.25, on Corning 7059 glass substrates. The X-ray diffraction studies revealed that all the films were strongly oriented along the (002) orientation corresponding to the hexagonal wurtzite structure. The crystalline quality of the layers was found to decrease with the increase of x, however, no structural changes were observed over the ‘Mn’ composition range investigated. The optical absorption studies revealed that the energy band gap of the films followed the Vegard's law. The optical band gap of the films prepared at x = 0.15 was found to be ∼3.35 eV. The photoluminescence characteristics of Zn_1−xMn_xO films showed an emission peak at around 390 nm with a broad band about 530 nm. The details of these results were reported and discussed.     

Structural and electrical characterization of boron-containing diamond-like carbon films deposited by femtosecond pulsed laser ablation

The present study investigates the influence of the incorporation of boron in Diamond-Like Carbon (DLC) films deposited by femtosecond laser ablation, on the structure and electrical properties of the coatings within the temperature range 70–300 K. Doping with boron has been performed by ablating alternatively graphite and boron targets. The film structure and composition have been highlighted by coupling Atomic Force Microscopy (AFM), Scanning Electron Microscopy equipped with a field emission gun (SEM-FEG) and High Resolution Transmission Electron Microscopy (HRTEM). Boron dilution ranges between 2 and 8% and appears as nanometer size clusters embedded in the DLC matrix. Typical resistivity values are 100 W cm for pure a-C films, down to few W cm for a-C:B films at room temperature. The resistance decreases exponentially when the temperature increases in the range 70–300 K. The results are discussed considering the classical model of hopping conduction in thin films. Some coatings show temperature coefficients of resistance (TCR) as high as 3.85%. TCRs decrease when the doping increases. Such high values of TCR may have interests in the use of these films as thermometer elements in micro and nanodevices.     

Electrochemical synthesis of orientation-ordered ZnO nanorod bundles

The high density and orientation-ordered ZnO nanorod bundles with wurtzite structures were prepared on Cu substrates by electrochemical deposition in solution of ZnCl₂ + tartaric acid at a temperature of 90 °C. This approach is a unique and size controlled synthetic method for the large-scale preparation of ZnO nanorod bundles. Cyclic voltammogram measured in solution of the mixture of ZnCl₂ and tartaric acid shows a restraining role of tartaric acid for the electro-reduction of Zn(II). The formation mechanism of ZnO on the surface of the cathode can be explained that the high temperature (⩾90 °C) promotes the corrosion of electrodeposited Zn via reacting with H₂O and O₂ to form the stable passive phase of ZnO. The compositions of the nanorod bundles can be entirely ZnO or Zn and ZnO composites determined by the temperature and deposition rate. The photoluminescence (PL) properties indicate that these ZnO deposits are highly crystallized and of excellent optical quality.     

Electrochemical sensing of hydroxylamine by gold nanoparticles on single-walled carbon nanotube films

The arrays of gold nanoparticles (AuNPs) were fabricated on flexible and transparent single-walled carbon nanotube (SWCNT) films using the electrochemical deposition method, and the patterned nanotubes were then used as electrodes for hydroxylamine detection. The sizes and densities of the AuNPs could easily be controlled by varying the amount of charge deposited, and the gold-deposited area showed a homogeneous distribution on the exposed SWCNT film surface. X-ray diffraction analysis of the AuNPs shows a face-centered cubic structure that is dominated by the lowest energy {111} facets. The oxidation of the hydroxylamine on the AuNP-deposited SWCNT films depended strongly on the solution pH, and the maximum catalytic current was observed at a pH of 9.0. A linear electrical response was observed for concentrations ranging from 0.016 to 0.210 mM, and the detection limit and the sensitivity were 0.72 μM and 165.90 μAmM^?1 cm^?2, respectively. Moreover, the amperometric response in hydroxylamine showed a stable response for a long time (300 s), during which time it retained 94% of its initial value. In the long-term storage stability test, the current response to hydroxylamine decreased slightly, with only 17% leakage after 30 days.     

Si-doped carbon nanostructured films by pulsed laser deposition from a liquid target

Ablation of a silicone oil, Dow Corning's DC-705 with laser pulses of sub-ps duration in high vacuum is a novel approach to fabrication of Si-doped carbon nanocomposite films. Gently focused, temporally clean 700 fs pulses @ 248 nm of a hybrid dye/excimer laser system produce power densities of the order of 10¹¹–10¹² W cm^?2 on the target surface. The evolution of the chemical structure of film material is followed by comparing Fourier Transformed Infrared and X-ray Photoelectron spectra of films deposited at temperatures between room temperature and 250 °C. Despite the low thermal budget technique, in the spectrum of films deposited at room temperature the fingerprint of the silicone oil can clearly be identified. With increasing substrate temperature the contribution of the features characteristic of the oil gradually diminishes, but does not completely disappear even at 250 °C. This result is intriguing since the chance of oil droplets to survive in their original liquid form on the hot surface should be minimal. The results of the X-ray Photoelectron Spectroscopy suggest that the chemical structure of the film material resembles that of the oil. Both reflection mode optical microscopy and low magnification Scanning Electron Microscopy reveal that the films are inhomogeneous: areas of lateral dimensions ranging from a few to tens of micrometers, characterized by different contrasts can be identified. On the other hand, surface mapping by Scanning Electron and Atomic Force Microscopy unambiguously proves that all films possess a solid surface consisting of nanoparticles of less than 100 nm dimension, without the presence of any drop of oil. Possible explanations of the puzzling results can be that the films are polymers consisting mainly of the molecules of the target material, or composites of solid C:Si nanoparticles and oil residues.     

Electrochemical deposition of Zn on TiN microelectrode arrays for microanodes

Zn was electrochemically deposited onto square TiN electrodes with edge dimensions of 490 μm and 40 μm. These were fabricated by standard microfabrication techniques, which provide an extremely reproducible electrode for experimentation. Reliable constant-potential electrodeposition of Zn on the TiN was performed at −1.2 V, just below the Zn/Zn²⁺ redox potential. At more negative potentials, the hydrogen evolution reaction on TiN interfered with bulk metal electrodeposition, resulting in poor quality Zn films. A two-step plating procedure was shown to be most efficient for electrochemical deposition of Zn, with Zn nucleation on the TiN substrate at high cathodic overpotential during the first step and a second step of bulk metal growth on the nucleated layer at low cathodic overpotential. These results were most consistent with 3D progressive nucleation of Zn on the TiN surface. Using this procedure, deposits of Zn on 490 μm TiN electrodes were uniform. In contrast, Zn deposits on 40 μm electrodes formed high-surface area and volume surface structures resulting from preferential growth at the electrode corners due to enhanced hemispherical diffusion at these sites. This should enable the formation of high surface area, high current density Zn anodes on biocompatible TiN microelectrodes, which could find application as improved microanodes for implantable miniature power supplies, e.g., implantable glucose sensors and internal cardioverter defibrillators.     

Deposition of oriented zeolite A films: in situ and secondary growth

Zeolite A suspensions with a monomodal, narrow particle size distribution have been prepared. The suspended particles in a TMAOH water solution at pH 9 are negatively charged with a zeta potential of −43 mV. Modification of the external surface of the zeolite particles by a silylation reaction produces particles that, when they are suspended in water, are positively charged and have a zeta potential of +40 mV.The suspensions of the negatively or positively charged particles can be used for the preparation of adsorbed layers of particles on oppositely charged substrates by electrostatic attraction. This deposition process leads to a high coverage of the substrate with well-adhered particles. The cubic morphology of the zeolite particles results in preferential orientation after deposition. The particles are oriented with their {h 0 0} planes (cube faces) parallel and perpendicular to the substrate (out-of-plane orientation). The particles are randomly oriented with respect to the direction perpendicular to the substrate (in-plane orientation). Although, under optimized conditions, the coverage is high and only one adsorption cycle is necessary, the particles are not closely packed.Alternately, the zeolite particle suspensions can be used to deposit close-packed arrays of particles by convective particle transport during dip coating on substrates bearing the same charge as the zeolite particles. Using monodispersed zeolite A suspensions and slow speed dip coating close-packed hexagonal colloidal crystals were prepared. The type of colloidal crystal deposits formed range from continuous sublayers, monolayers, or multilayers to isolated discoidal clusters consisting of few zeolite particles. Factors affecting the deposited layer(s) structure are particle concentration of the suspension and withdrawal speed. In addition to close packing, the layers prepared by dip coating exhibit preferred orientation with the particle faces lying parallel and perpendicular to the substrate surface. Moreover, this second route of precursor film formation by colloidal crystallization leads to domains of well-aligned zeolite particles in three dimensions, i.e. with their faces parallel to each other. The oriented domains span the length of several particles; however, low angle boundaries and other defects during colloidal crystallization prevent the formation of macroscopically three-dimensionally ordered zeolite particles.The precursor layers were subjected to secondary growth in order to prepare continuous intergrown films. Secondary growth proceeds initially by local epitaxy on the deposited particles. Later in the process, deposition proceeds by incorporation of particles from solution along with re-nucleation on the growing film. The intergrown films have predominately [h 0 0] out-of-plane orientation; however, after extended secondary growth treatment a population of [h h h] grains appears on the surface of the regrown films.     

Fabrication of highly conductive Ru/a-CNx:H composite films by anode deposit

Ruthenium(0) composite hydrogenated amorphous carbon nitride (Ru/a-CN_x:H) films were deposition on single crystal silicon (1 0 0) substrate by electrochemical deposition technique with acetonitrile as carbon source, and Ru₃(CO)₁₂ as dopant. In the deposited progress, the Si (1 0 0) acted as anode. The relative atomic ratio of Ru/N/C was about 0.28/0.33/1, and Ru nanocrystalline particles about 8 nm were homogeneously dispersed into the amorphous carbon matrix. After doping Ru into a-CN_x:H films, the conductivity of the films were evidently improved and the resistivity drastically decrease from 10⁸ Ω cm to about 100 Ω cm.