Annealing effect on magnetoresistance in NiO-Co-Cu based spin valves

We have fabricated two sets of NiO-Co-Cu based spin valves by the magnetosputtering technique with different deposition parameters. Magnetoresistance (MR) measurements show that the MR value for the NiO layer under the bottom of Co/Cu/Co spin valve (BSV) is larger than that for the NiO layer at the top of Co/Cu/Co (TSV). The MR value of BSV decreases with increasing annealing temperature in air or in vacuum, which disappears at the blocking temperature of NiO, i.e., about 250 °C. There is maximum MR value for TSV annealing at a temperature range from room temperature to 350 °C. The different thermal behavior for BSV and TSV is explained by the competition between the interface roughness of NiO/Co, which was determined by the grazing incident X-ray reflectivity and X-ray diffuse scattering, and the coupling effect between Co layer and NiO layer. PACS 68.60.Dv; 61.10.Eg; 68.35.Ct; 73.43.Qt; 75.25.+z     

Microstructural stability of NiO-containing spin valves annealed at room temperature

Microstructure of NiO-containing Co/Cu/Co spin valves (CCC-SV) annealed at room temperature for nearly four years has been studied by synchrotron radiation X-ray diffraction. With the annealing time expanding, the thickness of each sub-layer remains nearly unchanged while the interface roughness varies obviously compared with that of samples without annealing. The roughness at the interface of NiO/Co decreases with the annealing time increasing for both of the samples with NiO layer on the top (TSV) and under the bottom (BSV) of CCC-SV. On the other hand, the roughness at Co/Cu interface increases with the annealing time expanding for BSV while it decreases for TSV. These results indicate that the structure of TSV is more stable than that of BSV.

     

Magnetoresistance in epitaxial [NiFe/Cu/Co(/Cu)] films

Epitaxial [NiFe/Cu/Co(/Cu)] films have been grown on Si(100)/Cu substrates using an ultrahigh vacuum evaporation method. Magnetoresistance (MR) and magnetization were measured at room temperature with maximum applied field, 40 kA/m. The (100) oriented [NiFe(3 nm)/Cu(6 nm)/Co(3 nm)/Cu(6 nm)] × 10 multilayers showed a sharply peaked MR curve (when the external field was applied along [011] direction) due to magnetization rotation of free NiFe layers separated from Co layers with thick Cu layers. Furthermore the interposition of a Ag layer in the Cu layer reduced the couplings between ferromagnetic layers and improved the sensitivity of the [NiFe/Cu/Co(/Cu)] film. Si(100)/Cu(5 nm)/[Co(3 nm)/Cu(2.4 nm)/Ag(0.2 nm)/Cu(2.4 nm)/NiFe(3 nm)/Cu(2.4 nm)/Ag(0.2 nm)/Cu(2.4 nm)] × 10 multilayers showed a resistivity change of about 8.2% per kA/m (12 Oe).     

Enhancement of magnetoresistance sensitivity in Co/Cu/NiFe trilayers by softening the Co hard layer

Co/Cu/NiFe trilayers were prepared by sputtering without magnetic field applied. We have found that the Co(2 nm)Cu(1 nm)NiFe(2 nm) trilayer using Ta as buffer layer exhibits an enhanced magnetoresistance (MR) sensitivity by a factor of more than 6 and a low saturation field of 9.3 Oe. Experimental results have demonstrated that the low saturation field is attributed to the softening of the Co layer by depositing the Co(2 nm)Cu(1 nm)NiFe(2 nm) sandwich on Ta layer. The decrease of the coercivity of the Co layer also plays an important role in the enhancement of MR sensitivity by reducing the effective coercivity of the NiFe layer, which is discussed in terms of the change in interlayer coupling.     

Effects of Ni buffer layer on giant magnetoresistance in Co/Cu/Co sandwich

In order to increase the sensitivity of Co/Cu/Co sandwiches, different thickness Ni layers were used as buffer layer. It was found that in the Co 55 Å/Cu 35 Å/Co 55 Å sandwiches with different thickness Ni buffer layers, MR ratios between 3.5% and 5.6% could be obtained, and the coercive forces were about 12 Oe. Hence, the maximum field sensitivity could be enhanced to about 1%/Oe. Further investigation from the results of atomic force microscopy showed the improvement of the interfacial flatness in the sandwiches with Ni buffer layer. The microstructure observed by high-resolution electron microscope demonstrated the different structure of the two Co layers in the Ni buffered sandwich, which directly determined the small saturation field of the sandwich. This was confirmed by the magnetic behaviors of the two Co layers calculated from the experimental hysteresis loops. All these showed that the usage of a Ni buffer layer could result in interfacial improvement, different crystalline structure, and small saturation field in the Co/Cu/Co sandwich. These enhanced the electron spin scattering at the Co–Cu interfaces and finally enlarged the giant magnetoresistance and the sensitivity in the sandwich.     

Perpendicular interlayer coupling in Ni80Fe20/NiO/Co trilayers

An in-plane perpendicular magnetic coupling between Ni80Fe20 and Co has been found in NiFe/NiO/Co trilayers for a NiO thickness ranging from 4 to 25 nm by magneto-optical Kerr effect and x-ray magnetic circular dichroism measurements. In the easy magnetization direction of the Co layer, the Co coercive field H(C) increases when the thickness of the NiO layer t(NiO) increases. Because of the coupling, H(C) is always larger than for NiO/Co bilayers with the same thicknesses. The saturation field of the NiFe layer H(S) decreases when t(NiO) increases, indicating a weakening of the coupling. Numerical simulations show that the presence of interface roughness combined with a small value of the NiO anisotropy can explain the observed 90 degrees coupling.     

Effects of interfacial roughness on the magnetoresistance of Co/Cu multilayers

Using a semi-classical approach, Hood, Falicov and Penn have studied the effects of interfacial roughness on the magnetoresistance (MR) of iron based trilayers (Fe/Cr/Fe and Fe/Cu/Fe). We extend their theory to magnetic metallic multilayers composed of N bilayers ferromagnetic-normal metal. The in plane MR of Co/Cu multilayers is calculated for correlated quasiperiodic interfaces. The averaged effects due to impurities, interdiffusion, band structure, etc. are included in a simple way using two phenomenological parameters S^↑ and S^↓ for two directions of spin. MR variation with S^↑, S^↓ and relaxation time is reported. We analyse also recent experimental data giving the influence of number of bilayers on the MR of Co/Cu multilayers for different temperatures.     

Exchange coupling effects in NiO/Co and NiO/permalloy bilayers

NiO/Co and NiO/Ni₈₀Fe₂₀ bilayers were prepared at 293 onto SiO₂(1 0 1)/Si(1 1 1) and glass substrates using UHV (5×10⁻¹⁰ mbar) RF/DC magnetron sputtering. Results on magnetic measurements showed that the exchange biasing and coercive fields are inversely proportional to the Co and Ni₈₀Fe₂₀ (Py) layer thickness down to 2 nm. A maximal RT coupling energy for the NiO–Co and NiO–Py interface was estimated as 0.04 and 0.03 mJ/m² for the samples prepared onto SiO₂(1 0 1)/Si(1 1 1) substrates.     

自旋阀型[NiFe/Cu/Co/Cu]多层膜的磁电阻、矫顽力和稳定性研究

用电子束蒸镀工艺制备了自旋阀型［NiFe/Cu/Co/Cu］_N多层膜．研究了工艺过程及磁层、非磁层厚度和矫顽力对磁电阻的影响．还研究了磁电阻的稳定性和降低中心磁场等问题．用较优化的方法，制备了中心磁场为（10—20）（10³/4π）A/m，优值大于0.2%（（10³/4π）A/m）^-1的多层膜．实验表明，磁电阻随磁场的变化在中心区内是可逆的．经200℃退火15min，中心磁场略有减小，磁电阻稍有增加．一些样品经一年多老 关键词：     

The giant magnetoresistance of Co/Cu superlattices grown by MBE

We report the first observation of a giant magnetoresistance (MR) in Co/Cu superlattices grown by MBE. The maximum value of the MR is - 26% and this is found in a specimen for which the copper layers are about 7 Å thick and which includes a thin 10 Å layer of gold in the buffer region between the substrate and the superlattice. From RHEED and X-ray diffraction it is shown that the metallic layers in the specimens grown in this way are extremely flat and that the orientation of the copper is (111).     

Magnetic and magnetoresistive properties of epitaxial Co/Cu/Co trilayers on Si(111)

Giant magnetoresistance of the epitaxial Co/Cu/Co trilayers grown on vicinal Si(111) was determined as a function of Cu spacer coverage in the range from 0 to 7 ML. The first maximum of giant magnetoresistance and antiferromagnetic coupling was detected at 3.0 ML coverage of the Cu spacer. The portion of antiferromagnetic coupling in the first antiferromagnetic maximum was estimated as 17%. 3D growth mode of the Cu spacer leads to the simultaneous occurrence of the ferromagnetically and antiferromagnetically coupled areas between the Co layers.     

Effects of layering and working pressure on magnetic and magnetotransport properties of as sputtered multilayered granular Co/Cu films

Heterogeneous films of CoCu having high giant magnetoresistance (MR) were prepared in the form of multilayered granular specimens by a two-target RF sputtering. MR performances of 11% at 293 K were obtained in as deposited granular films. The magnetic and magnetotransport properties could be changed to a large extent, by varying the thickness of the deposited Co (Cu) layer as well as the Ar pressure. The effect of Co concentration, in the range 5–30%, and the influence of thermal treatments were also analysed.     

Anomalous temperature dependence of the magnetoresistance in Co/Cu multilayers

An anomalous temperature dependence of magnetoresistance (MR) of Co/Cu multilayer films witha ～3 Å thick magnetic layer has been established experimentally. The temperature of the MR maximum T _max is shown to coincide with the Néel temperature. The variation of T _max with the Cu layer thickness follows an oscillatory pattern.     

Temperature and set field dependence of exchange bias training effects in Co/NiO/[Co/Pt] heterostructures with orthogonal easy axes

Training effects in a new class of exchange biased ferromagnet/antiferromagnet/ferromagnet trilayers (Co/NiO/[Co/Pt]₃) with mutually orthogonal easy axes have been measured and successfully modeled. Previous experiments have demonstrated an enhanced blocking temperature as well as the ability to isothermally field tune the magnitude of the room temperature in-plane exchange bias. These effects have been attributed to the presence of the [Co/Pt] multilayer with perpendicular magnetic anisotropy, which variably pins the backside NiO domains. Here we show that the tuning of the exchange bias and the blocking temperature enhancement are highly dependent on both the temperature and the in-plane remanence of the normally out-of-plane [Co/Pt] multilayer, achieved using modest in-plane set fields. Training effects and their dependence on temperature and in-plane remanence are modeled using a thermodynamic approach. The in-plane remanence of the [Co/Pt] acts only to set the equilibrium exchange bias value and sets the scale for the blocking temperature; it has no effect on the training. We conclude that training effects occur only at the Co/NiO interface and that the relaxation towards equilibrium is confined to this interface. The field enhanced blocking temperature and isothermal tuning of exchange bias in these magnetic heterostructures with mutually orthogonal easy axes could play a role in the enhancement of exchange bias effects in future spin-valve devices. A thorough knowledge of the training effects is essential to account for the fundamental relaxation mechanisms that occur with repeated field cycling.     

Room-temperature magnetoresistance in a-C:Co/Si system

Three types of a-C:Co/Si samples were fabricated using the pulsed laser deposition:Co2-C98/Si with Co dispersed in the a-C film,Co2-C98/Si with Co segregated at the interface,and a-C/Co/Si with Co continuously distributed at the a-C/Si interface.Both types of Co2-C98/Si samples had the positive bias-voltage-dependent magnetoresistance(MR) at 300 K,and all MRs had saturated behavior.The study on the electrotransport properties indicated that the MR appeared in the diffusion current region,and the mechanism o...     

Selective removal and patterning of a Co/Cu/Co trilayer created by femtosecond laser processing

The selective removal and patterning of a typical pseudo-spin-valve structure, consisting of a Co(20 nm)/ Cu(6 nm)/Co(3 nm) trilayer, by femtosecond laser has been examined in terms of irradiation parameters and layer structure. Ablation thresholds of the individual Co and Cu thin films and the SiO₂/Si substrate have been measured for single-shot irradiation with a 200 femtosecond (fs) laser pulses of a Ti:sapphire laser operating at 775 nm. Ablation of the entire trilayer structure was characterized by a sequential removal of the layers at a threshold level of fluence of 0.28 J/cm². Atomic Force Microscopy, optical microscopy, profilometry and Sputtered Neutral Mass Spectroscopy were employed to characterize the laser-induced single-shot laser selective removal and patterned areas. As a result, two phenomena were found to characterize the laser process: (i) selective removal of the Co and Cu layer due to the change of the laser fluence and (ii) regular pillars’ area of Co/Cu/Co could be achieved in a regular manner with the lowest pillar width size of 1.5 μm. Ablation through the layers was accompanied by the formation of bulges at the edges of the pillars, which was the biggest inconvenience in lowering the pillar size through the femtosecond laser process.     

Exchange bias and negative magnetoresistance in [Co/Bi/Co]/IrMn thin films]

The artificial control of grain-boundary resistance and its contribution to magnetic and magneto-transport properties in [Co(3 nm)/Bi(2.5 nm)/Co(3 nm)]Ir₂₀Mn₈₀(12 nm) thin films that exhibit exchange bias is studied. Transverse magnetoresistance (MR) loops exhibit a negative MR in thin films grown by magnetron sputtering on Si/SiN_x(100 nm) substrates. This negative MR effect is of the giant-MR (GMR) type, although its magnitude is less than 1%. A considerable exchange bias (EB) effect is observed only at lower temperatures, where both, GMR and isothermal magnetization loops exhibit a shift of −600 Oe at 5 K.     

应力场对多层膜Permalloy/Cu/Co/NiO铁磁共振性质影响的理论研究

采用能量极小原理研究了Permalloy(Py)/Cu/Co/Ni O多层膜结构中层间耦合强度和应力各向异性场对薄膜共振频率的影响,得到共振频率随外磁场强度变化关系式.结果发现外应力场强度和方向对系统共振频率的影响在本文中要强于层间耦合强度和交换各向异性场,外应力场方向对光学模共振频率的影响强于声学模,而外应力场强度对声学模共振频率的影响强于光学模.     

应力场对多层膜Permalloy/Cu/Co/NiO铁磁共振性质影响的理论研究

采用能量极小原理研究了Permalloy(Py)/Cu/Co/NiO多层膜结构中层间耦合强度和应力各向异性场对薄膜共振频率的影响,得到共振频率随外磁场强度变化关系式．结果发现外应力场强度和方向对系统共振频率的影响在本文中要强于层间耦合强度和交换各向异性场．外应力场方向对光学模共振频率的影响强于声学模,而外应力场强度对声学模共振频率的影响强于光学模．     

Property changes of electroplated Cu/Co alloys and multilayers by organic additives

We investigated the change of magnetic properties of the electroplated Cu/Co alloys and multilayers caused by organic additives and high temperature annealing. When plated with a pure Cu/Co electrolyte, the alloy contained ∼25% of Cu and ∼75% of Co. The alloy was made of hcp-Co, fcc-Co and Cu(1 1 1) and was super-paramagnetic at room temperature. As we add a few organic additives in the plating electrolyte, the hcp-Co of the films disappeared. The organic additives contained in the electrolytes changed paramagnetic Cu/Co multilayers to ferromagnets. High-temperature thermal annealing increased coercivity due to the growth of the Co grains.