Carbon monoxide adsorption on the metastable fcc-Co/Cu(1 0 0) surface

The adsorption properties of CO on the epitaxial five-monolayer Co/Cu(1 0 0) system, where the Co overlayer has stabilized in the metastable fcc-phase, are reported. This system is known to exhibit metallic quantum well (MQW) states at energies 1 eV or greater above the Fermi level, which may influence CO adsorption. The CO/fcc-Co/Cu(1 0 0) system was explored with low energy electron diffraction (LEED), inverse photoemission (IPE), reflection-absorption infrared spectroscopy (RAIRS) and temperature programmed desorption (TPD). Upon CO adsorption, a new feature is observed in IPE at 4.4 eV above E_F and is interpreted as the CO 2π^∗ level. When adsorbed at room temperature, TPD exhibits a CO desorption peak at ∼355 K, while low temperature adsorption reveals additional binding configurations with TPD features at ∼220 K and ∼265 K. These TPD peak temperatures are correlated with different C-O stretch vibrational frequencies observed in the IR spectra. The adsorption properties of this surface are compared to those of the surfaces of single crystal hcp-Co, as well as other metastable thin film systems.     

Influence of ternary addition of transition elements (Cr,Si and Mn) on the microstructure and magnetic properties of nano-structured CuCo alloy

The current state of studies presents the effect of ternary addition of transition elements such as Mn, Cr and Si (10 wt%) on the mechanically driven non-equilibrium solubility of 40 wt% Co containing Cu–Co alloy. X-ray powder diffraction analysis indicates that addition of Mn has been found to be the most effective in enhancing the solubility and formation of a complete solid solution between Co and Cu in a short duration (30 h) of ball milling. The microstructure of the ball milled CuCoMn alloy was found to be stable after the isothermal annealing up to a temperature of 450 °C for 1 h. The magnetic properties such as magnetic saturation, coercivity and remanence of ball milled CuCo alloy in the presence of Mn significantly altered after annealing in the temperature range 350–650 °C for 1 h. The best combination of magnetic properties of CuCoMn alloy has been found after annealing at 550 °C for 1 h.     

Bi surfactant effects of Co/Cu multilayered films prepared by sputter deposition

The influence of a Bi surfactant layer on the structural and magnetic properties of Co/Cu multilayers grown onto Cu(1 1 0) buffer layer by RF magnetron sputtering has been studied. The results of X-ray diffraction revealed the initial deposition of a 2.0 Å-thick Bi layer onto the Cu buffer layer prior to the deposition of the Co/Cu multilayer yielded high-quality fcc-(1 1 0) oriented epitaxial films. The X-ray photoelectron spectra revealed that Bi was segregated at around the top of the surface. Therefore, Bi was concluded to be an effective surfactant to enhance the epitaxial growth of Co/Cu(1 1 0) multilayer. The maximum giant magnetoresistance and antiferromagnetic interlayer coupling ratios of the Co/Cu multilayers were increased by using the Bi surfactant layer.     

Growth and alloy formation of ultrathin Ni films on Co/Pt(1 1 1)

Low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) were used to study the growth and the structural evolution of Ni/Co/Pt(1 1 1) following high-temperature annealing. From the oscillation of the specular beam of the LEED and Auger uptake curve, we concluded that the growth mode of thin Ni films on 1 ML Co/Pt(1 1 1) is at least 2 ML layer-by-layer growth before three-dimensional island growth begins. The alloy formation of Ni/1 ML Co/Pt(1 1 1) was analyzed by AES. The temperature for the intermixing of Ni and Co layers in the upper interface without diffusing into the bulk of Pt is independent of the thickness of Ni when a Co buffer is one atomic monolayer. After the temperature was increased, formations of Ni-Co-Pt alloy, Ni-Pt alloy and Co-Pt alloy were observed. The temperature required for the Ni-Co intermixing layer to diffuse into Pt bulk increases with the thickness of Ni. The interlayer distance as a function of annealing temperature for 1 ML Ni/1 ML Co/Pt(1 1 1) was calculated from the I-V LEED. The evolution of LEED patterns was also observed at different annealing temperatures.     

Electrodeposition and characterization of Cu/Co multilayers: Effect of individual Co and Cu layers on GMR magnitude and behavior

The present work discusses the successful electrodeposition of Cu/Co multilayers, exhibiting appreciable GMR of 12-14% at room temperature. The effect of individual Cu and Co layers on the magnitude and behavior of GMR has been studied. By varying the thickness of individual layers the field at which saturation in GMR is observed can be controlled. It was observed that for lower thicknesses of Co layer, the saturation fields are reduced below 1 kOe. The Cu layer thickness seems to control the nature of magnetic coupling and the saturation field, with the two showing a correlation.     

Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

Co(0 0 0 1)_hcp/Fe(1 1 0)_bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO₃(1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0)_bcc soft magnetic layer grew epitaxially on SrTiO₃(1 1 1) substrate with two type variants, Nishiyama–Wasserman and Kurdjumov–Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1)_hcp interlayer, while hcp-Co layer formed on Au(1 1 1)_fcc or Ag(1 1 1)_fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application.     

Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering

Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42° at 350 °C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak (∼485 nm) and green peak (∼527 nm) increased noticeably after annealing. The origin of these emissions was discussed.     

Effects of thermal annealing on structural and magnetic properties of thin Pt/Cr/Co multilayers

Thermal stability of thin Pt/Cr/Co multilayers and the subsequent changes in their structural, magnetic, and magneto-optical properties are reported. We observe CoCrPt ternary alloy phase formation due to annealing at temperatures about 773 K, which is accompanied by enhancement in the coercivity value. In addition, 360° domain wall superimposed on a monodomain like background has been observed in the pristine multilayer, which changes into a multidomain upon annealing at 873 K.     

Formation, stability and CO adsorption properties of PdAg/Pd(1 1 1) surface alloys

The formation, stability and CO adsorption properties of PdAg/Pd(1 1 1) surface alloys were investigated by X-ray photoelectron spectroscopy (XPS) and by adsorption of CO probe molecules, which was characterized by temperature-programmed desorption (TPD) and high resolution electron energy loss spectroscopy (HREELS). The PdAg/Pd(1 1 1) surface alloys were prepared by annealing (partly) Ag film covered Pd(1 1 1) surfaces, where the Ag films were deposited at room temperature. Surface alloy formation leads to a modification of the electronic properties, evidenced by core-level shifts (CLSs) of both the Pd(3d) and Ag(3d) signal, with the extent of the CLSs depending on both initial Ag coverage and annealing temperature. The role of Ag pre-coverage and annealing temperature on surface alloy formation is elucidated. For a monolayer Ag covered Pd(1 1 1) surface, surface alloy formation starts at ∼450 K, and the resulting surface alloy is stable upon annealing at temperatures between 600 and 800 K. CO TPD and HREELS measurements demonstrate that at 120 K CO is exclusively adsorbed on Pd surface atoms/Pd sites of the bimetallic surfaces, and that the CO adsorption behavior is dominated by geometric ensemble effects, with adsorption on threefold hollow Pd₃ sites being more stable than on Pd₂ bridge sites and finally Pd₁ a-top sites.     

Magnetic properties of HITPERM-type alloys at high temperature

(Fe,Co)–Zr,Hf)–Cu–B (HITPERM-type) alloys with variable Hf, Zr and Co content were isothermally crystallised at 500–650 °C for 1 h, and the optimum nanocrystallisation temperature was selected on the basis of the minimum coercive field at room temperature. The quasistatic hysteresis loops were measured at temperature from 20 to 650 °C. Subsequently, the optimally annealed alloys were subjected to long-term annealing at 500, 550 and 600 °C. Working temperature of 600°C is too high for the investigated alloys to maintain stable magnetic properties. Temperature of 550 or 500 °C permits the material to be magnetically stable for a long period. The magnetic hysteresis loops recorded for the nanocrystalline alloys, where Fe:Co ratio is close to 1 and refractory metals content is 7 at.%, prove that coercive field increases slightly with temperature, but remains in the range of 20–40 A/m (depending on the alloy composition) from 20 to 550 °C. This proves that the investigated alloys, after optimisation of chemical composition, may be suitable for high temperature use.     

Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers

Er-doped SiO single layer and Er-doped SiO/SiO₂ multilayers with different SiO thicknesses were prepared by evaporation. In the as-deposited samples, the erbium ions exhibit a very weak photoluminescence emission at 1.54 μm. This luminescence is strongly enhanced after annealing treatments between 500 and 1050 °C, with an optimal annealing temperature which is dependent from the SiO thickness. For the SiO single layer, this optimal temperature is around 700 °C while it is shifted at highest temperature for the multilayers. The origin of the higher luminescence intensity in the SiO layer is also discussed.     

Characterization of Cu additive FePt-C granular films

FePt-C granular films doped with different Cu atomic fractions (x_Cu) were fabricated using facing-target sputtering at room temperature and subsequently annealed at 650 °C. Structural analyses reveal that the as-deposited films are in amorphous state. Appropriate Cu addition (x_Cu = 14) can improve the ordering of L1₀ FePt phase, and excessive Cu doping destroys the formation of ordered L1₀ phase with the appearance of Fe₃C and CuPt phases. Besides, preferential graphitization of amorphous carbon (a-C) occurs near large metal particles upon annealing. Annealing turns the as-deposited superparamagnetic films into ferromagnetic associated with coercivity peaks at x_Cu = 14, drops from ∼11.2 kOe at 5 K to ∼7.2 kOe at 300 K in a 50 kOe field.     

Structural and morphological evolution of Co on faceted Pt/W(1 1 1) surface upon thermal annealing

The structural and morphological changes of a 1.1 monolayer (ML) Pt deposit on W(1 1 1) have been investigated in situ, in ultra-high vacuum, as a function of the annealing temperature from 700 to 1340 K, by a combination of grazing incidence X-ray diffraction and grazing incidence small-angle X-ray scattering. Before annealing, the thin Pt layer is two-dimensional and lattice-matched to the W(1 1 1) surface. The faceting of Pt/W(1 1 1) towards nanoscale three-sided pyramids with {2 1 1} facets has been detected from 715 K. At this stage, the pyramids, which have a 5-nm average lateral size, cover nearly perfectly the surface. At higher temperatures, they increase in size. The role of the edge energy in the nanofaceting process is discussed. In addition, 4 MLs Co are deposited at room temperature on the smallest Pt/W pyramids. The obtained three-dimensional Co islands are correlated with the Pt/W nanopyramids and Co is relaxed on Pt/W. At approximately 800 K, a CoPt alloy is formed and becomes better ordered as the annealing temperature increases. At 1100 K, both defaceting and phase separation begin; the CoPt alloy segregates on the W(1 1 1) flat surface, while Co forms an epitaxial layer on the {2 1 1} facets. In addition, in the temperature range of 1100-1200 K, a great majority of {2 1 1} large facets coexist with some {1 1 0} small facets. Finally, the surface becomes flat again at 1250 K.     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.     

The γ-Fe formation in epitaxial Cu(0 0 1)/Fe(0 0 1) thin films by the solid-state synthesis: Structural and magnetic features

The γ-Fe formation in epitaxial Cu(0 0 1)/Fe(0 0 1) bilayers with the annealing temperature increasing has been studied. Using Mössbauer spectroscopy, X-ray diffraction, and magnetic analysis, structural and chemical characterization of the interface between cooper and iron layers has been performed. After annealing at 850 °C and subsequent cooling to room temperature, paramagnetic γ-Fe(0 0 1) precipitates with an average size of 30 nm coherent to a Cu(0 0 1) matrix form. Conditions of intermixing and the γ-Fe formation at the Cu/Fe interface are explained in terms of the solid-state synthesis in thin films. Specific features of the martensitic transition γ↔α are discussed.     

Electronic properties of thin Zn layers on Pd(1 1 1) during growth and alloying

The growth and alloying of thin Zn layers on Pd(1 1 1) was investigated using X-ray and ultraviolet photoelectron spectroscopy as well as low energy electron diffraction and correlated with density functional calculations. At 105 K, the formation of a pseudomorphic Zn monolayer is observed. Upon heating this layer to 550 K or upon deposition of 1 ML at 550 K, an ordered p(2 × 1) PdZn surface alloy with a Pd:Zn ratio of ∼1:1 is formed, with a characteristic Pd 3d_5/2 peak at a binding energy of ∼335.6 eV. For deposition of 3 ML Zn at 550 K or by heating 3 ML, deposited at low temperature, to 500 or 600 K, a PdZn alloy with a Pd:Zn ratio of again ∼1:1 is found in the surface region, with a Pd 3d_5/2 peak at ∼335.9 eV; the direct preparation at 550 K leads to a more homogeneous and better ordered alloy. The valence band spectrum of this alloy with a low density of states at the Fermi level and pronounced maxima due to the “Pd 4d” band at ∼2.4 and 3.9 eV closely resembles the spectrum of Cu(1 1 1), in good agreement with the calculated density of states for a PdZn alloy of 1:1 stoichiometry. The shift of the “Pd 4d” band to higher binding energies as compared to Pd(1 1 1) indicates a charge transfer from Zn to the Pd 4d levels. Overall, the similarity between the ultraviolet photoelectron spectra for the PdZn alloy and for Cu(1 1 1) is taken as explanation for the similar chemical activity of both systems in methanol steam reforming.     

Surface treatments toward obtaining clean GaN(0 0 0 1) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum

We studied processes of cleaning GaN(0 0 0 1) surfaces on four different types of wafers: two types were hydride vapor phase epitaxy (HVPE) free-standing substrates and two types were metal-organic chemical vapor deposition (MOCVD) films grown on these HVPE substrates and prepared by annealing and/or Ar ion sputtering in ultra high vacuum. We observed the surfaces through treatments using in situ low-energy electron diffraction (LEED), reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), and Auger electron spectroscopy, and also using ex situ temperature programmed desorption, X-ray photoelectron spectroscopy, X-ray diffraction, and secondary ion mass spectrometry. For HVPE samples, we obtained relatively clean surfaces under optimized three-step annealing conditions (200 °C for 12 h + 400 °C for 1 h + 500 °C for 5 min) without sputtering, after which the surface contamination of oxide and carbide was reduced to ∼20% of that before annealing. Clear GaN(0 0 0 1)1×1 patterns were obtained by LEED and RHEED. STM images showed flat terraces of ∼10 nm size and steps of ∼0.5 nm height. Upon annealing the HVPE-GaN samples at a much higher temperature (C), three-dimensional (3D) islands with facets were formed and the surface stoichiometry was broken down with the desorption of nitrogen in the form of ammonia, since the samples include hydrogen as an impurity. Ar⁺ sputtering was effective for removing surface contamination, however, postannealing could not recover the surface roughness but promoted the formation of 3D islands on the surface. For MOCVD/HVPE homoepitaxial samples, the surfaces are terminated by hydrogen and the as-introduced samples showed a clear 1×1 structure. Upon annealing at 500-600 °C, the surface hydrogen was removed and a 3×3 reconstruction structure partially appeared, although a 1×1 structure was dominant. We summarize the structure differences among the samples under the same treatment and clarify the effect of crystal quality, such as dislocations, the concentration of hydrogen impurities, and the residual reactant molecules in GaN films, on the surface structure.     

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

The adhesion of Cu on Ru substrates with different crystal orientations was evaluated. The crystal orientation of sputter deposited Ru could be changed from (1 0 0) to (0 0 1) by annealing at 650 °C for 20 min. The adhesion of Cu was evaluated by the degree of Cu agglomeration on Ru. Cu films on annealed Ru films with the (0 0 1) crystal orientation showed 28% lower RMS values and 50% lower Ru surface coverage than Cu as-deposited on Ru having the (1 0 0) crystal orientation after annealing at 550 °C for 30 min, which suggest that Cu wettability on the Ru(0 0 1) was better than that on the Ru(1 0 0) plane. The low lattice misfit of 4% between Cu(1 1 1) and Ru(0 0 1) may be the reason for this good adhesion property.     

Ion irradiation induced Al-Ti interaction in nano-scaled Al/Ti multilayers

Interactions induced in Al/Ti multilayers by implantation of Ar ions at room temperature were investgated. Initial structures consisted of (Al/Ti) × 5 multilayers deposited by d.c. ion sputtering on Si(1 0 0) wafers, to a total thickness of ∼250 nm. They were irradiated with 200 keV Ar⁺ ions, to the fluences from 5 × 10¹⁵ to 4 × 10¹⁶ ions/cm². It was found that ion irradiation induced a progressed intermixing of the multilayer constituents and Al-Ti nanoalloying for the highest applied fluence. The resulting nanocrystalline structure had a graded composition with non-reacted or interdiffused Al and Ti, and γ-AlTi and AlTi₃ intermetallic phases. Most intense reactivity was observed around mid depth of the multilayers, where most energy was deposited by the impact ions. It is presumed that Al-Ti chemical reaction is triggered by thermal spikes and further enhanced by chemical driving forces. The applied processing can be interesting for fabrication of tightly bond multilayered structures with gradual changes of their composition and properties.     

Enhanced reactivity and selectivity in oxidation of Cu(1 0 0) and α-Cu-Al(5 at.%)(1 0 0) surfaces studied by electron and ion spectroscopies

In this study we investigate the influence of alloying on the reactivity and bonding of oxygen on α-Cu-Al(5 at.%)(1 0 0) oriented single crystal surfaces by X-ray photoelectron spectroscopy (XPS), ultra-violet spectroscopy (UPS) and low energy ion scattering (LEIS) spectroscopy, at room temperature. It was found that alloying results in an enhanced reactivity of both Cu and Al sites in comparison with the pure metals. According to adsorption curves calculated from XPS, saturation of the alloy surface occurs for exposures of ∼15 L. At saturation the total amount of adsorbed oxygen is similar for the alloy and pure copper surfaces. It was determined that first mostly Al sites are oxidized, followed by simultaneous oxidation of Cu and Al sites. At saturation the amount of oxygen bonded to Cu sites is ∼1.7 larger then that bonded to Al sites. From a comparison of the XPS and LEIS data analysis as a function of oxygen exposure it was found that oxidation of α-Cu-Al(5 at.%)(1 0 0) alloy is a multi-stage process with fast and slow stages. These stages involve an interplay of chemisorption, sub-surface diffusion of oxygen and Al segregation. UPS measurements show an increase in the work function of the alloy surface with oxygen adsorption. This is a contrast to pure Cu surfaces where the work function decreases at the initial stages of oxidation followed by an increase with oxygen exposure. Annealing to 400 °C drives the oxidized alloy surface into its thermodynamic state resulting in the formation of an aluminum oxide layer. Possible mechanisms to explain the enhanced reactivity of the alloy surface compared to that of pure copper are suggested and discussed.