Gas-phase reactions in plasmas of SF6 with O2 in He

Processes which occur in microwave discharges of dilute mixtures of SF₆ and O₂ in He have been examined using a flow reactor sampled by a mass spectrometer. Two classes of experiments were performed. In the first set of experiments, mixtures containing 6×10¹¹ cm^–3 SF₆, 6×10¹⁶ cm^–3 He, and O₂ in the range (0–3.6)×10¹³ cm^–3 were passed through a 20-W 2450-MHz microwave discharge. The gas mixtures arriving at a sample point downstream from the discharge were examined for SF₆, SF₄, SOF₂, SOF₄, SO₂F₂, SO₂, F, and O. In the second class of experiments, rate coefficients were measured for the reactions of SF₄ with O and O₂ and for the reaction of SF with O. The rate coefficient for the reaction of SF with O was found to be (4.2±1.5)×10^–11 cm^–3 s^–1. SF₄ was found to react so slowly with both oxygen atoms and oxygen molecules that only upper limits could be placed on the rate coefficients for these reactions. These values were 2×10^–14 cm³ s^–1 and 5×10^–15 cm³ s^–1 for reactions with O and O₂ respectively. The observed distribution of products from the discharged mixtures is discussed in terms of the measured rate coefficients.     

Gas-phase combination reactions of SF4 and SF5 with F in plasmas of SF6

Reactions of both SF₄ and SF₅ with F have been studied at 295 K in a gas-flow reactor sampled by a mass spectrometer. The rate coefficient for the combination reaction of F with SF₄ to produce SF₅ was found to increase from (0.9 to 3.0)×10^–12 cm³ s^–1 when the helium bath gas number density was increased from (2 to 26)×10¹⁶ cm^–3. The values obtained here are three orders of magnitude higher than a recent estimate of the high-pressure value based on the modelling of photochemical studies. The experimental results have been compared with RRKM and master equation calculations in which a simplified Gorin model has been used to determine the structure of the transition state. These calculations show that reasonable agreement can be obtained between the experimental data and the calculation if a small (2 KJ/mol) activation energy is assumed. The rate coefficient for the reaction between SF₅ and F to produce SF₆ was found to be independent of helium bath gas number density within the range given above. The value obtained for the rate coefficient was 9×10^–12 cm³ s^–1 with an uncertainty of a factor of 2. This value is close to that of 1×10^–11 cm³ s^–1 computed from the simplified Gorin model and to the value of 1.7×10^–11 cm³ s^–1 deduced from modelling of photochemical experiments.     

Gas-phase reactions of CF3 and CF2 with atomic and molecular fluorine: Their significance in plasma etching

Reaction rate coefficients have been measured at 295 K for both CF₃ and CF₂ with atomic and molecular fluorine. The reaction between CF₃ and F was studied over a gas number density range of (2.4–23)×10¹⁶ cm^–3 with helium as the bath gas. The measured rate coefficient increased from (1.1–1.7)×10^–11 cm³ s^–1 as the gas number density increased over this range. In contrast to this relatively small change in rate coefficient with gas number density, the rate coefficient for CF₂+F increased from (0.4–2.3)×10^–12 cm³ s^–1 as the helium gas number density increased from (3.4–28.4)×10¹⁶ cm^–3. Even for the highest bath gas number density employed, the rate coefficient was still more than an order of magnitude lower than earlier measurements of this coefficient performed at comparable gas number densities.Both these association reactions are examined from the standpoint of the Gorin model for association of radicals and use is made of unimolecular dissociation theory to examine the expected dependence on gas number density. The calculations reveal that CF₃+F can be explained satisfactorily in these terms but CF₂+F is not well described by the simple Gorin model for association.CF₃ was found to react with molecular fluorine with a rate coefficient of (7±2)×10^–14 cm³ s^–1 whereas only an upper limit of 2×10^–15 cm³ s^–1 could be placed on the rate coefficient for the reaction between CF₂ and F₂. The values obtained for this set of reactions mean that the reaction between CF₃ and F will play an important role in plasmas containing CF₄. The high rate coefficient will mean that, under certain conditions, this particular reaction will control the amount of CF₄ consumed. On the other hand, the much lower rate coefficient for reactions between CF₂ and F means that CF₂ will attain much higher concentrations than CF₃ in plasmas where these combination reactions are dominant.     

Negative ion formation in compounds relevant to SF6 decomposition in electrical discharges

Dissociative and nondissociative electron attachment in the electron impact energy range 0–14 eV are reported for SOF₂ SOF₄, SO₂F₂, SF₄, SO₂, and SiF₄ compounds which can be formed by electrical discharges in SF₆. The electron energy dependences of the mass-identified negative ions were determined in a time-of-flight mass spectrometer. The ions studied include F^– and SOF ₂ ^–* from SOF₂; SOF ₃ ^– and F^– from SOF₄; SO₂F ₂ ^–* , SO₂F^–, F ₂ ^– , and F^– from SO₂F₂; SF ₄ ^–* and F^– from SF₄; O^–, SO^–, and S^– from SO₂; and SiF ₃ ^– and F^– from SiF₄. Thermochemical data have been determined from the threshold energies of some of the fragment negative ions. Lifetimes of the anions SOF ₂ ^–* , SO₂F ₂ ^–* , and SF ₄ ^–* are also reported.     

Gas-phase reactions in plasmas of SF6 with O2: Reactions of F with SOF2 and SO2 and reactions of O with SOF2

The plasma chemistry of SF₆/O₂ mixtures is particularly complicated because of the large number of possible reactions. Over a wide range of conditions, products including SF₄, SOF₄, SOF₂, and SO₂F₂ can be formed but thre is considerable uncertainty about the major reactions which contribute to the formation of these species. In this work reactions of oxygen atoms with SOF₂ and fluorine atoms with SOF₂ and SO₂ have been studied in order to determine the principal sources of SO₂F₂ in these plasmas. Reactions were studied at 295 K in a gas flow reactor sampled by a mass spectrometer. No reaction could be detected between oxygen atoms and SOF₂, which for the conditions employed, means that the upper limit for the reaction rate coefficient is 1×10^–14 cm³ sec^–1. The reaction of fluorine atoms with SOF₂ was studied with the helium bath gas number density ranging from 3.1×10¹⁶ to 2.0×10¹⁷ cm^–3. Within this range the rate coefficient increased with increasing [He] from (4.1 to 10.8)×10^–14 cm³ sec^–1. SO₂ was found to react with fluorine atoms with a rate coefficient which appeared to be independent of the helium bath gas number density over the range given above. The possibility that this reaction occurred entirely on the walls of the reactor is discussed.     

By-product formation in spark breakdown of SF6/O2 mixtures

The yields of SOF₄, SO₂F₂, SOF₂, and SO₂ have been measured as a function of O₂ content in SF₆/O₂ mixtures, following spark discharges. All experiments were made at a spark energy of 8.7 J/spark, a total pressure of 133 kPa, and for O₂ additions of 0, 1, 2, 5, 10, and 20% to SF₆. Even for the case of no added O₂, trace amounts of O₂ and H₂O result in the formation of the above by-products. However, addition of O₂ significantly increases the yields of SOF₄ and SO₂F₂, while SOF₂ is only slightly affected. The net yields for SOF₄ and SO₂F₂ formation range from 0.18×10^–9 and 0.64×10^–10 mol·J^–1, respectively, at 1% O₂ content to 10.45×10^–9 and 7.15×10^–10 mol·J^–1, respectively, at 20% O₂ content. The mechanism for SOF₄ production appears to involve SF₄, an important initial product of SF₆, as a precursor. Comparison of the SOF₄ and SO₂F₂ yield from spark discharges (arc and corona) shows that the yields from other discharges (arc and corona) shows that the yields can vary by at least three orders of magnitude, depending on the type of discharge and on other discharge parameters.     

Rate Constant for the Reaction of the OH-Radical with CH2F2

The rate constant value of k ₁ = (6.05 ± 0.20)×10⁹ cm³ mol^–1 s^–1 (with ± 1 error) has been determined for the reaction OH + CH₂F₂ (1) by applying the discharge-flow/resonance-fluorescence method at 298 K.     

Transfer of F− in the reaction of SF 6 − with SOF4: Implications for SOF4 production in corona discharges

The temperature (T) and electric field-to-gas pressure (E/P) dependences of the rate coefficientk for the reaction SF ₆ ^– +SOF₄SOF ₅ ^– +SF₅ have been measured. ForT<270 K,k approaches a constant of 2.1×10^–9 cm³/s, and for 433>T>270 K,k decreases withT according tok (cm³/s)=0.124 exp [–3.3 lnT(K)]. ForE/Pk has a constant value of about 2.5×10^–10 cm³/s, and for 130 V/cm·torr>E/P>60 V/cm·torr, the rate is approximately given byk (cm³/s)7.0×10^–10 exp (–0.022E/P). The measured rate coefficient is used to estimate the influence of this reaction on SOF₄ production from negative, point-plane, glow-type corona discharges in gas mixtures containing SF₆ and at least trace amounts of O₂ and H₂O. A chemical kinetics model of the ion-drift region in the discharge gap is used to fit experimental data on SOF₄ yields assuming that the SF ₆ ^– +SOF₄ reaction is the predominant SOF₄ loss mechanism. It is found that the contribution of this reaction to SOF₄ destruction falls considerably below the estimated maximum effect assuming that SF ₆ ^– is the predominant charge carrier which reacts only with SOF₄. The results of this analysis suggest that SF ₆ ^– is efficiently deactivated by other reactions, and the influence of SF ₆ ^– +SOF₄ on SOF₄ production is not necessarily more significant than that of other slower secondary processes such as gas-phase hydrolysis.     

Identification of corona discharge-induced SF6 oxidation mechanisms using SF6/18O2/H2 16O and SF6/16O2/H2 18O gas mixtures

The absolute yields of gaseous oxyfluorides SOF₂, SO₂F₂, and SOF₄ from negative, point-plane corona discharges in pressurized gas mixtures of SF₆ with O₂ and H₂O enriched with¹⁸O₂ and H₂ ¹⁸O have been measured using a gas chromatograph-mass spectrometer. The predominant SF₆ oxidation mechanisms have been revealed from a determination of the relative¹⁸O and¹⁶O isotope content of the observed oxyfluoride by-product. The results are consistent with previously proposed production mechanisms and indicate that SOF₂ and SO₂F₂ derive oxygen predominantly from H₂O and O₂, respectively, in slow, gas-phase reactions involving SF₄, SF₃, and SF₂ that occur outside of the discharge region. The species SOF₄ derives oxygen from both H₂O and O₂ through fast reactions in the active discharge region involving free radicals or ions such as OH and O, with SF₅ and SF₄.     

Studies on synthesis, characterization and thermochemistry of Mg2[B2O4(OH)2]·H2O

A new magnesium borate Mg₂[B₂O₄(OH)₂]·H₂O has been synthesized by the method of phase transformation of double salt at hydrothermal condition and characterized by XRD, IR, TG and DSC. The enthalpy of solution of Mg₂[B₂O₄(OH)₂]·H₂O in 0.9764 mol L^–1 HCl was determined. With the incorporation of the enthalpies of solution of H₃BO₃ in HCl (aq), of MgO in (HCl+H₃BO₃) (aq), and the standard molar enthalpies of formation of MgO(s), H₃BO₃(s), and H₂O(l), the standard molar enthalpy of formation of –(3185.78±1.91) kJ mol^–1 of Mg₂[B₂O₄(OH)₂]·H₂O was obtained.This revised version was published online in November 2005 with corrections to the Cover Date.     

Plasma etching of refractory metals (W,Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products

The etching rates and reaction products of refractory metals (W, Mo, and Ta) and silicon have been studied in a SF₆-O₂ r.f. plasma at 0.2 torr. The relative concentrations of WF₆ and WOF₄ and the intensities of the WF _n ⁺ (n=3–5), WOF _m ⁺ (m=1–3), MoF _n ⁺ , and MoF _m ⁺ ions have been measured by mass spectroscopy. An analysis of the neutral composition of the plasma during etching of these metals and a comparison with the results obtained for silicon show that at least two species are involved for W and Mo etching: fluorine and oxygen atoms. A reaction scheme is proposed.     

Aspects of the chemistry of SF6/O2 plasmas

The production ofSOF ₄ initiated by the reaction of F atoms withSOF ₂ has been studied in a gas-flow reactor at 295 K for helium bath gas number densities in the range (3.0–27.0)×10¹⁶ cm^–3. The effect of O atoms on the formation ofSOF ₄ has been analyzed in terms of the competing reactionsSOF ₃+FSOF₄ andSOF ₃+OSO ₂ F ₂+F. This analysis leads to the conclusion that the rate coefficients for these two processes are equal within an uncertainty of about 50%. Furthermore, both experiment and calculations indicate that the rate coefficient for reactions between F atoms andSOF ₃ is close to its high-pressure limit under the conditions employed. The experiments set a lower limit on this rate coefficient of 5×10^–11 cm³ s^–1, while calculations based on unimolecular rate theory suggest that it may be greater than 1×10^–10 cm³ s^–1. These results make it clear that the two reactions shown above cannot explain the relative abundances ofSOF ₄ andSO ₂ F ₂ which are observed inSF ₆/O ₂ plasmas. This suggests thatSF ₂ is a major precursor in the sequence of reactions following the dissociation ofSF ₆.     

The thermal dehydration and decomposition of Ba[Cu(C2O4)2(H2O)]·5H2O

The thermal behaviour of Ba[Cu(C₂O₄)₂(H₂O)]·5H₂O in N₂ and in O₂ has been examined using thermogravimetry (TG) and differential scanning calorimetry (DSC). The dehydration starts at relatively low temperatures (about 80°C), but continues until the onset of the decomposition (about 280°C). The decomposition takes place in two major stages (onsets 280 and 390°C). The mass of the intermediate after the first stage corresponded to the formation of barium oxalate and copper metal and, after the second stage, to the formation of barium carbonate and copper metal. The enthalpy for the dehydration was found to be 311±30 kJ mol^–1 (or 52±5 kJ (mol of H₂O)^–1). The overall enthalpy change for the decomposition of Ba[Cu(C₂O₄)₂] in N₂ was estimated from the combined area of the peaks of the DSC curve as –347 kJ mol^–1. The kinetics of the thermal dehydration and decomposition were studied using isothermal TG. The dehydration was strongly deceleratory and the -time curves could be described by the three dimensional diffusion (D3) model. The values of the activation energy and the pre-exponential factor for the dehydration were 125±4 kJ mol^–1 and (1.38±0.08)×10¹⁵ min^–1, respectively. The decomposition was complex, consisting of at least two concurrent processes. The decomposition was analysed in terms of two overlapping deceleratory processes. One process was fast and could be described by the contracting-geometry model withn=5. The other process was slow and could also be described by the contracting-geometry model, but withn=2.The values ofE _a andA were 206±23 kJ mol^–1 and (2.2±0.5)×10¹⁹ min^–1, respectively, for the fast process, and 259±37 kJ mol^–1 and (6.3±1.8)×10²³ min^–1, respectively, for the slow process.Dedicated to Prof. Menachem Steinberg on the occasion of his 65th birthday     

Preparation,Characterization and Standard enthalpy of formation of Sr2CeO4.

Sr₂CeO₄ has been prepared by sol-combustion and co-precipitate routes and the resulting products have been characterized by XRD analysis. The molar enthalpies of solution of Sr₂CeO₄(s), Sr(NO₃)₂(s) and Ce(NO₃)₃·6H₂O(s) in 0.150 dm^–3 of (4.41 mol dm–3 H₂O₂+4.23 mol dm^–3 of HNO₃) solvent as well as the molar enthalpies of solution of Sr₂CeO₄(s), SrCl₂(s) and CeCl₃(s) in 0.150 dm³ of (1.47 mol dm^–3 H₂O₂+3.05 mol dm^–3 of HClO₄) solvent have been measured using an isoperibol type calorimeter. From these results and other auxiliary data, the standard molar enthalpy of formation of Sr₂CeO₄ has been derived to be –2277.3±3.1 kJ mol^–1 at 298.15 K. This is the first reported thermodynamic data on this compound.     

Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products

Discrete electron-molecule processes relevant to SF₆ etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF₆, SO₂, SOF₂, SO₂F₂, SOF₄, and SF₄, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF₆ by-products in SF₆.     

Kinetics of formation of sulfur dimers in pure SF6 and SF6-O2 discharges

The emission band spectra of S, molecule (B³ _u ^– X³ _g ^– transition) and of SO molecule (A³ X^3–) were detected in SF₆ and SF₆-O₂ rf discharges. It has been observed that the presence of a material which can be etched by SF₆ products considerably enhances the density of S₂ in the reactor. By means of mass spectrometry it has been shown that the m/e =83 mu signal assigned to S₂F⁴ ions evolves exactly in the same manner as the S₂ band intensity during the etching of Si or W in SF₆-O₂ discharge. A reaction scheme involving S₂F radicals is proposed to explain these experimental results.     

Halogen displacement chemistry with silver and alkali metal salts: Preparation of SF5-esters, alcohols, aliphatic olefins, acids and an iodide

It has been found that treatment of SF₅-alkyl halides, especially SF₅(CH₂)₂Br, with silver salts such as CH₃C(O)OAg, p-CH₃C₆H₄SO₃Ag, CF₃SO₃Ag and AgNO₃ provides convenient pathways for preparing the following ester compounds: SF₅CH₂CH₂R (R = CH₃COO, TosO, CF₃SO₃, NO₃), SF₅(CH₂)₃OTos, and SF₅(CF₂)₄(CH₂)₂OAc. Important derivatives prepared from these esters include SF₅(CH₂)₂OH; SF₅(CF₂)₄(CH₂)₂OH. Several alkenes SF₅C(Br)CH₂ and SF₅CH₂(COOCH₃)CCHC(O)OCH₃ are obtained using silver salts. The use of alkali metals salts with SF₅(CH₂)₃Br is studied and yields SF₅(CH₂)₃I; also, a pathway has been developed that extends for SF₅(CH₂)₃₋ the chain by two-carbon atoms and also produces the first SF₅-containing malonic acid.     

Spectrokinetic study of SF5 and SF5O2 radicals and the reaction of SF5O2 with NO

UV spectra of SF₅ and SF₅O₂ radicals in the gas phase at 295 K have been quantified using a pulse radiolysis UV absorption technique. The absorption spectrum of SF₅ was quantified from 220 to 240 nm. The absorption cross section at 220 nm was (5.5 ± 1.7) × 10⁻¹⁹ cm². When SF₅ was produced in the presence of O₂ an equilibrium between SF₅, O₂, and SF₅O₂ was established. The rate constant for the reaction of SF₅ radicals with O₂ was (8 ± 2) × 10⁻¹³ cm³ molecule⁻¹ s⁻¹. The decomposition rate constant for SF₅O₂ was (1.0 ± 0.5) × 10⁵ s⁻¹, giving an equilibrium constant of K_eq = [SF₅O₂]/[SF₅][O₂] = (8.0 ± 4.5) × 10⁻¹⁸ cm³ molecule⁻¹. The SF₅ O₂ bond strength is (13.7 ± 2.0) kcal mol⁻¹. The SF₅O₂ spectrum was broad with no fine structure and similar to the UV spectra of alkyl peroxy radicals. The absorption cross section at 230 nm was found to (3.7 ± 0.9) × 10⁻¹⁸ cm². The rate constant of the reaction of SF₅O₂ with NO was measured to (1.1 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹ by monitoring the kinetics of NO₂ formation at 400 nm. The rate constant for the reaction of F atoms with SF₄ was measured by two relative methods to be (1.3 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹. © 1994 John Wiley & Sons, Inc.     

Pentafluoro-λ-sulfanyl (SF5) perfluoroalkyl iodides-synthesis and reaction with ethylene and tetrafluoroethylene : Crystal structure of SF5(CF2)4CH2CH2I

A series of reactions between SF₅CF₂CF₂I and SF₅(CF₂)₄I with F₂CCF₂ was carried out in an effort to find the most effective methods for chain-extension. Also, for the first time, SF₅(CF₂)₈I and SF₅(CF₂)₁₀I have been prepared and isolated. The reaction conditions for the addition of H₂CCH₂ were also investigated. A determination of the crystal structure of the SF₅(CF₂)₄CH₂CH₂I has been carried out: the crystal system is monoclinic, with space group P2(1)/n and a=23.465(5) Å; b=6.0971(12) Å; c=44.892(9) Å; α=90°; β=99.38(3)°; γ=90°; Z=20.     

Rate Coefficient for Self-Association Reaction of CF2 Radicals Determined in the Afterglowof Low-Pressure C4F8 Plasmas

We have analyzed decay kinetics of CF₂ radicals in the afterglow of low-pressure, high-density C₄F₈ plasmas. The decay curve of CF₂ density has been approximated by the combination of first- and second-order kinetics. The surface loss probability evaluated from the frequency of the first-order decay process has been on the order of 10^–4. This small surface loss probability has enabled us to observe the second-order decay process. The mechanism of the second-order decay is self-association reaction between CF₂ radicals (CF₂+CF₂C₂F₄). The rate coefficient for this reaction has been evaluated as (2.6–5.3)×10^–14 cm³/s under gas pressures of 2 to 100 mTorr. The rate coefficient was found to be almost independent of the gas pressure and has been in close agreement with known values, which are determined in high gas pressures above 1 Torr.