Conducting AFM and 2D GIXD studies on pentacene thin films

Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation between the crystalline structure of the initial submonolayer of a pentacene film and the mobility of the corresponding 60-nm-thick films showing terrace-like structure, as confirmed by 2D grazing-incidence X-ray diffraction and atomic force microscopy. Specifically, multilayered pentacene films, grown from single crystal-like faceted islands on HMDS-treated surface, have shown much higher charge mobility (mu = 3.4 +/- 0.5 cm2/Vs) than those with polycrystalline dendritic islands (mu = 0.5 +/- 0.15 cm2/Vs) on OTS-treated ones.     

Effect of dielectric roughness on performance of pentacene TFTs and restoration of performance with a polymeric smoothing layer

The morphology, structure, and transport properties of pentacene thin film transistors (TFTs) are reported showing the influence of the gate dielectric surface roughness. Upon roughening of the amorphous SiO2 gate dielectric prior to pentacene deposition, dramatic reductions in pentacene grain size and crystallinity were observed. The TFT performance of pentacene films deposited on roughened substrates showed reduced free carrier mobility, larger transport activation energies, and larger trap distribution widths. Spin coating roughened dielectrics with polystyrene produced surfaces with 2 A root-mean-square (rms) roughness. The pentacene films deposited on these coated surfaces had grain sizes, crystallinities, mobilities, and trap distributions that were comparable to the range of values observed for pentacene films deposited on thermally grown SiO2 (roughness also approximately 2 A rms).     

二氧化硅栅绝缘层的制备与表面修饰

研究了有机薄膜晶体管的二氧化硅栅绝缘层的性质。二氧化硅绝缘层的制备采用热生长法，氧化气氛是O₂(g)+H₂O(g)，工艺为干氧-湿氧-干氧的氧化过程。制得的绝缘层漏电流在10^-9 A左右。以该二氧化硅作为有机薄膜晶体管的栅绝缘层，并五苯作为有源层制作了有机薄膜晶体管器件。实验表明采用十八烷基三氯硅烷(OTS)进行表面修饰的器件具有OTS/SiO₂双绝缘层结构，可以有效地降低SiO₂栅绝缘层的表面能并改善表面的平整度。修饰后器件的场效应迁移率提高了1.5倍、漏电流从10^-9 A降到10^-10 A、阈值电压降低了5 V、开关电流比从10⁴增加到10⁵。结果显示具有OTS/SiO₂双绝缘层的器件结构能有效改进有机薄膜晶体管的性能。     

Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method

The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD). The measurements demonstrate that the weakly bound and highly directional neutral cluster beams are efficient in producing high-quality single-crystalline thin films with uniform, smooth surfaces and that SiO2 surface treatment with HMDS enhances the crystallinity of the pentacene thin-film phase. Tetracene- and pentacene-based OTFTs with the top-contact structure showed typical source-drain current modulation behavior with different gate voltages. Device parameters such as hole carrier mobility, current on/off ratio, threshold voltage, and subthreshold slope have been derived from the current-voltage characteristics together with the effects of surface treatment with HMDS. In particular, the high field-effect room-temperature mobilities for the HMDS-untreated OTFTs are found to be comparable to the most widely reported values for the respective untreated tetracene and pentacene thin-film transistors. The device performance strongly correlates with the surface morphology, and the structural properties of the organic thin films are discussed.     

Orientation of pentacene molecules on SiO2: from a monolayer to the bulk

Near edge x-ray absorption fine structure (NEXAFS) spectroscopy is used to study the orientation of pentacene molecules within thin films on SiO2 for thicknesses ranging from monolayers to the bulk (150 nm). The spectra exhibit a strong polarization dependence of the pi* orbitals for all films, which indicates that the pentacene molecules are highly oriented. At all film thicknesses the orientation varies with the rate at which pentacene molecules are deposited, with faster rates favoring a thin film phase with different tilt angles and slower rates leading to a more bulklike orientation. Our NEXAFS results extend previous structural observations to the monolayer regime and to lower deposition rates. The NEXAFS results match crystallographic data if a finite distribution of the molecular orientations is included. Damage to the molecules by hot electrons from soft x-ray irradiation eliminates the splitting between nonequivalent pi* orbitals, indicating a breakup of the pentacene molecule.     

Effect of the phase states of self-assembled monolayers on pentacene growth and thin-film transistor characteristics

To investigate the effects of the phase state (ordered or disordered) of self-assembled monolayers (SAMs) on the growth mode of pentacene films and the performance of organic thin-film transistors (OTFTs), we deposited pentacene molecules on SAMs of octadecyltrichlorosilane (ODTS) with different alkyl-chain orientations at various substrate temperatures (30, 60, and 90 degrees C). We found that the SAM phase state played an important role in both cases. Pentacene films grown on relatively highly ordered SAMs were found to have a higher crystallinity and a better interconnectivity between the pentacene domains, which directly serves to enhance the field-effect mobility, than those grown on disordered SAMs. Furthermore, the differences in crystallinity and field-effect mobility between pentacene films grown on ordered and disordered substrates increased with increasing substrate temperature. These results can be possibly explained by (1) a quasi-epitaxy growth of the pentacene film on the ordered ODTS monolayer and (2) the temperature-dependent alkyl chain mobility of the ODTS monolayers.     

Thin film structure of tetraceno[2,3-b]thiophene characterized by grazing incidence X-ray scattering and near-edge X-ray absorption fine structure analysis

Understanding the structure-property relationship for organic semiconductors is crucial in rational molecular design and organic thin film process control. Charge carrier transport in organic field-effect transistors predominantly occurs in a few semiconductor layers close to the interface in contact with the dielectric layer, and the transport properties depend sensitively on the precise molecular packing. Therefore, a better understanding of the impact of molecular packing and thin film morphology in the first few monolayers above the dielectric layer on charge transport is needed to improve the transistor performance. In this Article, we show that the detailed molecular packing in thin organic semiconductor films can be solved through a combination of grazing incidence X-ray diffraction (GIXD), near-edge X-ray absorption spectra fine structure (NEXAFS) spectroscopy, energy minimization packing calculations, and structure refinement of the diffraction data. We solve the thin film structure for 2 and 20 nm thick films of tetraceno[2,3-b]thiophene and detect only a single phase for these thicknesses. The GIXD yields accurate unit cell dimensions, while the precise molecular arrangement in the unit cell was found from the energy minimization and structure refinement; the NEXAFS yields a consistent molecular tilt. For the 20 nm film, the unit cell is triclinic with a = 5.96 A, b = 7.71 A, c = 15.16 A, alpha = 97.30 degrees, beta = 95.63 degrees, gamma = 90 degrees; there are two molecules per unit cell with herringbone packing (49-59 degree angle) and tilted about 7 degrees from the substrate normal. The thin film structure is significantly different from the bulk single-crystal structure, indicating the importance of characterizing thin film to correlate with thin film device performance. The results are compared to the corresponding data for the chemically similar and widely used pentacene. Possible effects of the observed thin film structure and morphology on charge carrier mobility are discussed.     

Interplay of structural dynamics and electronic effects in an engineered assembly of pentacene in a metal–organic framework

Charge carrier mobility is an important figure of merit to evaluate organic semiconductor (OSC) materials. In aggregated OSCs, this quantity is determined by inter-chromophoric electronic and vibrational coupling. These key parameters sensitively depend on structural properties, including the density of defects. We have employed a new type of crystalline assembly strategy to engineer the arrangement of the OSC pentacene in a structure not realized as crystals to date. Our approach is based on metal–organic frameworks (MOFs), in which suitably substituted pentacenes act as ditopic linkers and assemble into highly ordered π-stacks with long-range order. Layer-by-layer fabrication of the MOF yields arrays of electronically coupled pentacene chains, running parallel to the substrate surface. Detailed photophysical studies reveal strong, anisotropic inter-pentacene electronic coupling, leading to efficient charge delocalization. Despite a high degree of structural order and pronounced dispersion of the 1D-bands for the static arrangement, our experimental results demonstrate hopping-like charge transport with an activation energy of 64 meV dominating the band transport over a wide range of temperatures. A thorough combined quantum mechanical and molecular dynamics investigation identifies frustrated localized rotations of the pentacene cores as the reason for the breakdown of band transport and paves the way for a crystal engineering strategy of molecular OSCs that independently varies the arrangement of the molecular cores and their vibrational degrees of freedom.

Pentacene assembled into 1D arrays using a metal–organic framework (MOF) approach. This cofacial packing motif, which is not present in pentacene bulk, shows an interesting interplay of band-like and hopping-type transport.     

Structure versus electron effects in the growth mode of pentacene on metal-induced Si(111)-square root(3) x square root(3) surfaces

The growth of pentacene films on different metal (Ga, Pb, Bi, Ag) induced Si(111)-(square root(3) x square root(3))R30 degrees surfaces is investigated by scanning tunneling microscopy. On surfaces with high atomic surface roughness, such as GaSi-square root(3), beta-PbSi-square root(3), and alpha-BiSi-square root(3), pentacene forms an initial disordered wetting layer followed by the growth of crystalline thin films. The growth behavior is independent of the metallicity of the substrate surface in this regime. On the other hand, on surfaces with low adatom surface roughness, pentacene molecules form self-organized structures without forming a wetting layer. Moreover, the molecular orientation is critically dependent on the surface metallicity. This work reveals that the growth mode of pentacene on solid surfaces is determined by the combined effects of structural and electronic properties of the substrate.     

Substituent effects on packing entropy and film morphologies in the nucleation of functionalized pentacenes on SiO(2) substrate: Molecular dynamics simulations

The changes in structural ordering, packing entropy, free energy, and film morphologies in the initial nucleation processes of pentacene (Pn), 6, 13-bis(t-butylethynyl) pentacene (t-Bu Pn), and 6, 13-bis(triisopropylsilylethynyl) pentacene (TIPS Pn) on the SiO(2) substrate were investigated, by using the molecular dynamics simulations. During the nucleation, the rod-like Pn molecules tend to diffuse rapidly and have different orientations on the SiO(2) surface. At the low coverage, the t-Bu Pn and TIPS Pn molecules with the branched topological structures almost lie flat on the substrate. On the basis of statistical distribution of various packing configurations of the functionalized Pn pairs, the packing entropy is estimated according to the Boltzmann formula. The packing entropy abruptly decreases in the early stage of deposition. Once the critical nucleus size is reached, the packing entropy converges to a constant value. As the coverage increases, the monolayer films of Pn and its branched derivatives become more ordered. The TIPS Pn with the relatively larger molecular area would occasionally stand on the surface during the nucleation, resulting in the dramatic changes in free energy. In the monolayers, the functionalized Pn molecules are packing more orderly than those in amorphous solids, but less orderly than those in crystals. The degree of order of these monolayers increases as the size of the substituents increases. The understanding of substituent effects on nucleation processes and packing structures is helpful to fabricate organic thin films with well-predefined molecular orientations.     

Phase transition of alkylsilane monolayers studied by temperature-dependent grazing incidence X-ray diffraction

The phase transition of organosilane monolayers on Si-wafer substrate surfaces prepared from octadecyltrichlorosilane (OTS) or docosyltrichlorosilane (DOTS) was investigated on the basis of grazing incidence X-ray diffraction (GIXD) at various temperatures. The OTS monolayer was prepared by a chemisorption method. The DOTS monolayer was prepared by a water-cast method (DOTS). The GIXD measurement clarified that the OTS monolayer also changed from hexagonal phase to amorphous state above a melting point of otadecyl groups. The GIXD measurements also clarified that the molecular aggregation state of the DOTS monolayer changes from an anisotropic phase to an isotropic phase with an increase in temperature. An estimated linear thermal expansion coefficient of the lattice lengths of a and b of the DOTS monolayer in the rectangular crystalline state assigned a similar value to those of bulk polyethylene with an orthorhombic crystalline lattice. The setting angle of the ab plane of the rectangular DOTS monolayer also showed similar behavior to that of the ab plane of bulk polyethylene.     

Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors

Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.     

Epitaxial growth of pentacene films on Cu110

The molecular structure of thin pentacene (C(22)H(14)) films grown on a Cu(110) surface has been studied by means of He atom scattering, low energy electron diffraction, thermal desorption spectroscopy, x-ray photoelectron spectroscopy, and x-ray absorption spectroscopy. Depending on the actual film thickness three different crystalline phases have been identified which reveal a characteristic reorientation of the molecular plane relative to the substrate surface. In the monolayer regime the molecules form a highly ordered commensurate (6.5x2) structure with a planar adsorption geometry. For thin multilayers (thickness <2 nm) a second phase is observed which is characterized by a lateral ((-0.65 5.69) ( 1.90 1.37)) structure and a tilting of the molecular plane of about 28 degrees around their long axis which remains parallel to the surface. Finally, when exceeding a thickness of about 2 nm subsequent growth proceeds with an upright molecular orientation and leads to the formation of crystalline films which are epitaxially oriented with respect to the substrate. The present study thus demonstrates that also on metal substrates highly ordered pentacene films with an upright orientation of the molecular planes can be grown. Photoelectron spectroscopy data indicate further that thick films do not grow in a layer-by-layer mode but reveal a significant degree of roughness.     

Electronic states of a single layer of pentacene: standing-up and flat-lying configurations

The electronic properties of a single layer (SL) of pentacene molecules are investigated by high-resolution UV photoemission and near-edge X-ray absorption spectroscopy in different configurations of the SL, either standing up on an aromatic self-assembled monolayer or planar on a bare Cu(001) substrate. The weakly interacting pentacene molecules in the standing-up SL present a semiconducting character, and the empty states distribution reflects that of gas-phase pentacene, while the planar pentacene-Cu system shows a metallic interface with redistribution of the empty molecular states. The highest-occupied molecular orbital lineshape in the weakly interacting SL shows a double structure, attributed to two nonequivalent molecules in the ordered configuration.     

A high-resolution near-edge x-ray absorption fine structure investigation of the molecular orientation in the pentacene/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) pentacene/system

We present x-ray photoemission spectroscopy and highly resolved near-edge x-ray absorption fine structure spectroscopy measurements taken on pentacene thin films of different thicknesses deposited on a spin coated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) substrate. Thin films of pentacene were prepared by using organic molecular beam deposition in situ using strictly controlled evaporation conditions. Our investigations show that pentacene thin films on PEDOT:PSS are characterized by upright standing molecules. Due to the strong dichroic behavior, the calculated values of the molecular orientation give a clear indication not only of the real molecular arrangement in the films but also of a high orientational order. This high degree of molecular orientation order is a characteristic already of the first layer. The films show the tendency to grow on the PEDOT:PSS substrate following an island-fashion mode, with a relatively narrow intermixing zone at the interface between the pentacene and the polymer blend. The peculiarity of the growth of pentacene on PEDOT:PSS is due to the fact that the substrate does not offer any template for the nucleated films and thus exerts a lateral order toward the crystal structure arrangement. Under these conditions, the upright orientation of the molecules in the films minimizes the energy required for the system stability.     

Scanning force microscopic study of surface structure and properties of (alkylsilane/ fluoroalkylsilane) mixed monolayers

(Alkylsilane/fluoroalkylsilane) mixed monolayers were immobilized covalently on a silicon wafer surface with stable surface structure. Atomic force microscopic observation of the n-octadecyltrichlorosilane (OTS)/[2-(perfluorooctyl)ethyl]trichlorosilane (FOETS) mixed monolayer revealed that the crystalline OTS circular domains of ca. 1–2μm in diameter were surrounded by a sealike amorphous FOETS matrix, even though the molar fraction of OTS was above 75%. Also, the phaseseparated monolayer can be prepared from FOETS, and a non-polymerizable and crystallizable amphiphile such as lignoceric acid (LA). The phase separation of the (alkylsilane/fluoroalkylsilane) mixed monolayer might be attributed to both faster spreading of FOETS molecules on the water surface and the crystallizable characteristics of alkylsilane molecules. The mixed monolayer of crystalline alkylsilane (OTS) and amorphous alkylsilane (n-dodecyltrichlorosilane, DDTS) formed a phase-separated structure on the water surface because of the crystallizable characteristics of OTS. Lateral force microscopic (LFM) observation revealed that the order of the magnitude of lateral force generated against the silicon nitride tip was: n-triacontyltrichlorosilane (TATS) domain with longer alkyl chain > amorphous FOETS matrix > crystalline OTS domain. On the other hand, scanning viscoelasticity microscopic observation revealed that the order of the magnitude of modulus was: Si substrate > crystalline OTS domain > amorphous FOETS matrix.     

SiO2/α-FeOOH和SiO2/γ-Fe2O3微粒的界面研究

α－FeOOH微粒由于其表面高活性，在转变成γ－Fe2O3的热处理过程中容易烧结，一旦这种烧结现象发生，得到的γ－Fe2O3磁粉磁性能大大下降[1]．为了克服这一困难，目前采用在α-FeOOH微粒表面包敷有机物[2]和无机物[3]来隔离颗粒，阻止其聚集．其中SiO2表面包敷处理是最令人感兴趣的研究课题之一[4，5]．SiO2是一种难烙性的非磁性材料，它包敷在α-FeOOH微粒表面外，不仅可提高α－FeOOH转变成γ－Fe2O3的热处理温度，有利于得到外形完好、晶格完整的γ－Fe2O3磁粉，而且由包效层与内核之间的界面相互作用引起的表面各向异性常…     

Self-assembly of two- and three-dimensional particle arrays by manipulating the hydrophobicity of silica nanospheres

The surface hydrophobicity of colloidal silica (SiO2) nanospheres is manipulated by a chemical graft of alkyl chains with silane coupling agents or by physical adsorption of a cationic surfactant. The surface-modified SiO2 spheres can be transferred from the aqueous phase to organic solvents and readily self-assemble at the water-air interface to form two-dimensional (2D) particle arrays. Closely packed particle monolayers are obtained by adjusting the hydrophilic/hydrophobic balance of the synthesized SiO2 spheres and may further be transferred onto solid substrates layer by layer to form three-dimensional (3D) ordered particle arrays with a hexagonal close-packed (hcp) crystalline structure. The 2D monolayer and 3D multilayer SiO2 films exhibit photonic crystal properties, which were determined by the UV-visible spectroscopic analysis in transmission mode. In the multilayer films, the Bragg diffraction maxima increased with an increase in thickness of the particle layers. The experimentally observed diffraction positions are in good agreement with those that were theoretically calculated.     

Structure and dielectric properties of HfO<Subscript>2</Subscript> films prepared by a sol–gel route

Mono- and multilayer HfO₂ sol–gel thin films have been deposited on silicon wafers by dip-coating technique using a solution based on hafnium ethoxide as precursor. The densification/crystallization process was achieved by classical annealing between 400 and 600 °C for 0.5 h (after drying at 100 °C). Systematic TEM studies were performed to observe the evolution of the thin film structure depending on the annealing temperature. The overall density of the films was determined from RBS spectrometry correlated with cross section (XTEM) thickness measurements. After annealing at 450 °C the films are amorphous with a nanoporous structure showing also some incipient crystallization. After annealing at 550 °C the films are totally crystallized. The HfO₂ grains grow in colonies having the same crystalline orientation with respect to the film plane, including faceted nanopores. During annealing a nanometric SiO₂ layer is formed at the interface with the silicon substrate; the thickness of this layer increases with the annealing temperature. Capacitive measurements allowed determining the value of the dielectric constant as 25 for four layer films, i.e. very close to the value for the bulk material.     

Crystal growth of para-sexiphenyl on clean and oxygen reconstructed Cu(110) surfaces

The formation of crystalline para-sexiphenyl (6P) films on Cu(110) and Cu(110)-(2 × 1)O (Cu-O) has been studied by low energy electron diffraction, X-ray absorption spectroscopy and both in situ and ex situ X-ray diffraction methods to elucidate the transition from the initial monolayers to crystalline thin films. It is found that, for Cu-O, a single and, for Cu(110), a double wetting layer is formed which then acts as a template for the subsequent 3D crystal growth. For both substrates the orientation of the long molecular axes of the 6P molecules in the first layers is conserved for the molecules in the bulk crystals growing on them. The main difference between both systems is that on Cu-O the first monolayer assembles in a form close to that of a 6P bulk plane which can be easily continued by crystallites grown upon them, while on the Cu(110) surface the 6P mono- and bi-layers differ substantially from the bulk structure. The bi-layer forms a complex periodically striped phase. Thin 6P films grow with the 6P(203) crystal plane parallel to the Cu-O substrate surface. For this orientation, the 6P molecules are stacked in layers and the molecules demonstrate only one tilt of the mean molecular plane with respect to the sample surface. On clean Cu(110), a more complex 6P(629) plane is parallel to the substrate surface and this orientation is likely a consequence of the super-molecular long-range periodicity of the second molecular layer striped phase.