Improvement of interface structure and magnetic properties of Co on Si (100) by surfactant (Sb) mediated growth

In this study thin Co films were grown on Si (100): (1) with one monolayer of Sb as surfactant and (2) without any surfactant. The Co film, its interface with the Si substrate and the behavior of the Sb surfactant layer were investigated during the growth by high-resolution Rutherford backscattering. By the use of Sb, the evaporated cobalt grows in a layer-by-layer mode and the mixing of Co and Si at the interface is strongly reduced. During the evaporation of Co, Sb floats on the surface for all Co coverages with some incorporation in the grown Co film only for higher coverages. The improvement of the interface quality is also reflected in the magnetic properties of the Co film.     

Surface morphology of highly mismatched InSb films grown on GaAs substrates by molecular beam epitaxy

InSb films on GaAs(001) substrates with and without GaAs buffer layer have been grown by molecular beam epitaxy. Rather than surface undulations, aligned ripples and pyramidal hillocks along the orthogonal 〈110〉 directions were observed on the surface of InSb films. Both the preferential growth and the termination of ripples were proved to be related to strain‐driven mass transport. A model was proposed to elucidate the formation of the hillocks, which are more efficient to relax strain than ripples. Due to the strain relaxation through hillocks with small bases predominantly, the surfaces of the InSb films grown without a GaAs buffer layer are smoother than those of films grown with a GaAs buffer layer. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Tuning the coercive field of Ni and CuNi thin films with the embedding of Co nanoparticles: An element-specific study

Cobalt nanoparticles have been embedded either within magnetic thin films of CuNi or Ni, or at their interface with an Al capping layer. Soft X-ray magnetic circular dichroism (XMCD) was used to measure element-specific hysteresis loops, allowing discrimination between the nanoparticles and the host film. The hysteresis shows coupling between the nanoparticles and the films and a reduction in coercivity is observed when positioning the nanoparticles within the film, as opposed to at its interface with the cap. Sum rule analysis of the XMCD spectra makes it possible to determine the orbital to spin moment ratios for Co and Ni in the samples. The difference in the calculated ratios is consistent with the differences in the coercivities, the films appearing more homogenous due to hybridization of the 3d bands of Co and Ni when the nanoparticles are embedded deeper within the films, creating less pinning sites and hence a lower coercivity.     

Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaning

Depth-dependent magnetism in MnSb(0001) epitaxial films has been studied by combining experimental methods with different surface specificities: polarized neutron reflectivity, x-ray magnetic circular dichroism (XMCD), x-ray resonant magnetic scattering and spin-polarized low energy electron microscopy (SPLEEM). A native oxide ～4.5?nm thick covers air-exposed samples which increases the film's coercivity. HCl etching efficiently removes this oxide and in situ surface treatment of etched samples enables surface magnetic contrast to be observed in SPLEEM. A thin Sb capping layer prevents oxidation and preserves ferromagnetism throughout the MnSb film. The interpretation of Mn L(3,2) edge XMCD data is discussed.     

Single crystal Fe films grown on GaAs substrates

Fe films epitaxially grown on GaAs substrates have been prepared and investigated. On {110} surfaces, single crystal films are obtained. The magnetic properties are investigated using ferromagnetic resonance and inelastic light scattering from surface magnons. A satisfactory interpretation is obtained by assuming cubic and growth-induced tilted uniaxial anisotropy.     

Ultrathin film magnetic research at the Naval Research Laboratory

Scientists at the Naval Research Laboratory have been using molecular beam epitaxy techniques to grow a variety of high quality magnetic transition metal (TM) films and superlattices having TM thicknesses in the 1–10 monolayer regime. The magnetic and structural properties of these samples have been studied with a wide variety of standard and spin-sensitive techniques, both in vacuo and, when suitably protected, in air. The magnetic behavior of the materials is strongly modified as the TM layers become ultrathin. This work is illustrated with examples involving ultrathin Fe layers on Ag(001), Fe/Ag(001) superlattices containing ultrathin Fe layers, and bcc Co on GaAs(110).     

MOCVD growth, structure and magnetic properties of Fe films grown on GaAs (001) substrates

Thin iron films have been grown on (001) GaAs substrates by low pressure metal organic chemical vapor deposition (LP-MOCVD) at different temperatures with the pressure of 150 Torr. X-ray diffraction (XRD) analysis showed that all films have only one strong diffraction peak (110). The surface of Fe film became smooth with increasing the growth temperature. Magnetization measurements showed that the Fe films grown at different temperatures were ferromagnetic with easy axis parallel to the film surface and hard axis perpendicular to the substrates. The field dependence of magnetization along two axes showed a remarkable difference, implying that the samples have strong magnetic anisotropy. Furthermore, when the applied magnetic field is perpendicular to the Fe surface, a sharp jump in the hysteresis loop could be observed, followed by a broad shoulder, which is related to the interface effect, the existence of carbon and the formation of 180^°/90^° magnetic domains.     

Ag growth on Si(111) with an Sb surfactant investigated by scanning tunneling microscopy

We have investigated a room-temperature growth mode of ultrathin Ag films on a Si(111) surface with an Sb surfactant using STM in a UHV system. On the Sb-passivated Si surface, small sized islands were formed up to 1.1 ML. Flat Ag islands were dominant at 2.1 ML, coalescing into larger islands at 3.2 ML. Although the initial growth mode of Ag films on the Sb-terminated Si(111) surface was Volmer-Weber (island growth), the films were much more uniform than Ag growth on clean (Si(111) at the higher coverages. From the analysis of STM images of Ag films grown with and without an Sb surfactant, the uniform growth of Ag films using an Sb surfactant appears to be caused by the kinetic effects of Ag on the preadsorbed Sb layer. Our STM results indicated that Sb suppresses the surface diffusion of Ag atoms and increases the Ag-island density. The increased island density is believed to cause coalescence of Ag islands at higher coverages of Ag, resulting in the growth of atomically flat and uniform Ag islands on the Sb surfactant layer.     

Influence of the surface morphology of single-crystal Si(111) substrates on the magnetic properties of epitaxial cobalt films

The epitaxial films Co(111)/Cu(111)-R30°/Si(111) have been grown on the atomically smooth and vicinal Si(111) surfaces. The roughnesses of the substrate and the cobalt film have been determined using scanning tunneling microscopy. The dependence of the coercive force has been investigated as a function of the azimuthal angle. The dependence of the magnetic anisotropy and the coercive force on the surface roughness has been determined. It has been shown that, in the epitaxial cobalt films deposited on the atomically smooth silicon surfaces, crystalline anisotropy of the 〈110〉 type leads to the isotropy of the magnetization reversal processes. The step-induced uniaxial anisotropy has been observed upon deposition on the vicinal surfaces. The films deposited on the atomically smooth surfaces have a complex domain structure.     

高质量稀磁半导体(Ga,Mn)Sb单晶薄膜分子束外延生长

理论预言窄禁带稀磁半导体(Ga,Mn)Sb及其异质结构可能存在量子反常霍尔效应等新奇特性, 近年来受到了特别关注. 但是, 由于(Ga,Mn)Sb薄膜生长窗口窄, 纯相(Ga,Mn)Sb薄膜制备比较困难, 迄今关于这类材料的研究报道为数不多. 本文采用低温分子束外延的方法, 通过优化生长条件, 成功制备出厚度为10 nm, Mn含量在0.016至0.039之间的多组(Ga,Mn)Sb薄膜样品. 生长过程中反射式高能电子衍射原位监测和磁性测量都表明没有MnSb等杂相的偏析, 同时原子力显微镜图像表明其表面形貌平滑, 粗糙度小. 通过生长后退火处理, (Ga,Mn)Sb薄膜的最高居里温度达到30 K. 此外, 本文研究了霍尔电阻和薄膜电阻随磁场的变化关系, 在低温下观测到明显的反常霍尔效应.     

Magnetic force microscopy of GaAs:Mn ferromagnetic semiconductors

The dependence of magnetic properties of GaAs:Mn and MnAs epitaxial films grown on GaAs (001) by laser ablation of Mn and undoped GaAs in a hydrogen atmosphere under the growth conditions has been studied by magnetic force microscopy (MFM). Magnetic probe calibration for quantitative MFM measurements was performed by scanning across the slit of the magnetic-head of a tape recorder through which controlled direct current was passed. The dipole approximation was used to describe the magnetic properties of the MFM probe. Nonuniformity of the magnetization of GaAs:Mn films related to the formation of MnAs nanoinclusions, which are ferromagnetic at 300 K, has been observed. The typical scales of the spatial nonuniformity of the magnetization of GaAs:Mn films were varied from 270 to 550 nm depending on the film-growth conditions. The MnAs phase was identified by MFM measurements at an elevated temperature (up to 80°N).     

Onset of ferromagnetism in ultrathin Fe films on semiconductors

Very thin Fe films have been grown by molecular beam epitaxy on Ge(001), GaAs(001) and ZnSe(001) substrates, under identical preparation conditions. The electronic and magnetic properties of such interfaces have been studied, as a function of the Fe thickness, by means of spin resolved inverse photoemission. From the spin dependence of Fe empty states, we observe the onset of room temperature ferromagnetism to occur at a Fe thickness as low as three monolayers (ML) for Fe/Ge, while 5 and 8 ML have been found for Fe/GaAs and Fe/ZnSe, respectively.     

Growth and magnetic properties of ultra-thin Co(0001) films on patterned {\rm Mo(110)/Al_2O_3(11\overline{2}0)} substrates

Single crystalline patterned Mo(110) films have been prepared on ${\rm Al_2O_3(11\overline{2}0)}$ using standard lithographical techniques, that can be used as a substrate for 3d magnetic metals epitaxy. The preparation procedure, and the structural and morphological characteristics are presented. We show that the patterned Mo(110) films may be used in a similar way than single crystal Mo(110) substrates. The structural and magnetic properties of a 3 nm-thick cobalt film deposited on the patterned Mo(110) film have been studied. The epitaxial Co layer reveals a uniaxial in-plane magnetic anisotropy as measured by Kerr magnetometry.     

Soft X-ray magnetic circular dichroism of Heusler-type alloy Co2MnGe

Co and Mn 2p core absorption (XAS) and X-ray magnetic circular dichroism (XMCD) spectra have been measured for the ferromagnetic ternary alloy Co₂MnGe. The observed Co 2p XAS spectrum can be understood on the basis of the unoccupied Co 3d partial density of states, whereas the overall features of the Mn 2p XAS and XMCD spectra have been partly reproduced by the Mn 2p⁵3d⁶ final state multiplets. We have found that the orbital polarization of the Co 3d and even the Mn 3d states are recognizable, which suggests that a spin-orbit coupling should be taken into account in the energy band structure in order to reproduce the half metallic nature of this alloy.     

分子束外延生长Sb薄膜及其量子尺寸效应

在GaAs(001)衬底上，用分子束外延生长Sb(111)薄膜，用反射式高能电子衍射仪原位监控生长过程，用透射电子显微镜观察薄膜结构，并用van der Pauw方法测量了电阻率随生长温度的变化，观察到Sb薄膜半金属/半导体转变及其量子尺寸效应． 关键词：     

Thickness-dependent magnetic domain structures of Co ultra-thin film investigated by scanning transmission X-ray microscopy

Thickness-dependent magnetic domain structure of ultrathin Co wedge films (0.3 nm–1.0 nm) sandwiched by Pt layers was investigated by scanning transmission x-ray microscopy (STXM) employing X-ray magnetic circular dichroism (XMCD), utilizing elliptically polarized soft x-rays and electromagnetic fields, with a spatial resolution of 50 nm. The magnetic domain images measured at the Co L₃ edge showed the evolution of the magnetic domain structures from maze-like form to the bubble-like form as the perpendicular magnetic field was applied. The asymmetric domain expansion of a 500 nm-scale bubble domain was also measured when the in-plane and perpendicular external magnetic field were applied simultaneously.     

Magnetic properties of Co films grown on the modified Si(111) surface

The magnetic properties and domain structure of epitaxial Co films grown on a modified Si(111) surface were studied. First, the processes of growth of copper silicide nanostructures on the Si(111) surface were investigated. Copper silicide clusters were formed on the Si(111)-5.55 × 5.55-Cu surface at a substrate temperature of ～550°C. It was established that the nanostructures formed have a perfect faceting, and the lateral edges and long wire side are oriented along the Si〈110〉 crystallographic directions. Then, Co films were deposited on the formed structures. The investigation of the coercive force and reduced remanent magnetization showed that the Co(111) films have the sixth-order crystalline anisotropy. It was found that the coercive force of the Co films deposited on the Cu buffer layer is approximately six times less than that of the Co films deposited on the Si(111)-5.55 × 5.55-Cu surface and Si(111)?5.55 × 5.55-Cu/(Cu-Si) cluster surface.     

Multiple scattering approach to Co K-edge XMCD and XANES spectra in Gd–Co alloys

We have measured and analyzed Co K-edge X-ray absorption near edge structure (XANES) and X-ray magnetic circular dichroism (XMCD) near edge spectra in crystalline and amorphous GdCo₂ alloys. We have used a semi-relativistic full multiple scattering approach to the analyses of the XMCD spectra. A general formula is obtained which is applicable to randomly oriented systems in space. Useful information is obtained on both the electronic and geometric structure around a Co atom. The difference in XANES and XMCD spectra between crystalline and amorphous GdCo₂ is well explained by models referring to the anomalous X-ray scattering result, where three Gd atoms in the second shell are removed away. The calculated XANES are not so sensitive to the electronic structure, whereas the calculated XMCD spectra are rather sensitive to the spin polarization on Co atoms. The result shows that the spin polarization on Co atoms in GdCo₂ alloys is smaller than that in Co metals.     

Bi surfactant effects of Co/Cu multilayered films prepared by sputter deposition

The influence of a Bi surfactant layer on the structural and magnetic properties of Co/Cu multilayers grown onto Cu(1 1 0) buffer layer by RF magnetron sputtering has been studied. The results of X-ray diffraction revealed the initial deposition of a 2.0 Å-thick Bi layer onto the Cu buffer layer prior to the deposition of the Co/Cu multilayer yielded high-quality fcc-(1 1 0) oriented epitaxial films. The X-ray photoelectron spectra revealed that Bi was segregated at around the top of the surface. Therefore, Bi was concluded to be an effective surfactant to enhance the epitaxial growth of Co/Cu(1 1 0) multilayer. The maximum giant magnetoresistance and antiferromagnetic interlayer coupling ratios of the Co/Cu multilayers were increased by using the Bi surfactant layer.     

Soft X-ray magnetic circular dichroism of Cr-doped GaN

Soft X-ray magnetic circular dichroism (XMCD) have been measured for the Ga_0.97Cr_0.03N film grown by NH₃-assisted molecular beam epitaxy. Temperature dependence of the XMCD intensity was well described by the Curie–Weiss law. Although the sample showed ferromagnetic behavior at least up to room temperature, the ferromagnetic component could not be detected by the XMCD measurement.