AlAs/GaAs分布布拉格反射镜(DBR)的反射谱拟合与优化生长

对分布布拉格反射镜(DBR)的原理和特征进行了分析,使用传输矩阵方法计算了不同对数GaAs/AlAs反射镜的反射率曲线.利用分子束外延(MBE)设备生长了波长为920nm和980nm的半导体多层膜DBR反射镜,分析了实验测得的反射谱与理论拟合曲线之间的差异及其产生原因,实现了材料的优化生长,获得了反射率大于99;、中心波长和带宽接近理论计算值的DBR材料.该DBR的反射谱拟合与优化生长研究可应用于VCSEL和VECSEL激光器.     

MOVPE生长AlAs/GaAs Bragg反射膜

采用常压金属有机物气相沉积法生长AlAs/GaAs周期性反射膜,并利用双晶X射线衍射、扫描电子显微镜和记录式分光光度计等分析手段,对材料结构及光学性质进行了分析.实验结果表明,在780℃连续生长的薄膜结构和晶体质量都很好,但是反射率低;通过模拟计算,连续生长存在渐变层,而渐变层大大降低了反射率;在同样生长条件下间断生长得到较高反射率的薄膜材料.     

GaSb薄膜生长的RHEED研究

采用分子束外延技术,在GaAs衬底上生长GaSb薄膜时,利用反射式高能电子衍射仪(RHEED)对衬底表面清洁状况、外延层厚度等进行在线监控.通过RHEED讨论低温缓冲层对GaSb薄膜表面结构和生长机制的作用,可以估算衬底温度,并能计算出薄膜的生长速率.实验测量GaSb的生长周期为1.96s,每秒沉积0.51单分子层.低温缓冲层提高了在GaAs衬底上外延GaSb薄膜的生长质量.     

基于锑化物二类超晶格的多色红外探测器研究进展

近年来InAs/GaSb二类超晶格红外探测器在材料晶体结构生长、器件结构设计与成像应用方面取得了飞速发展。尤其在多色红外探测方面,二类超晶格材料以其具备的带隙可调、暗电流小、量子效率高、材料均匀性高,以及成本低等优越性能,使其逐步成为第三代红外焦平面探测器的优选材料。本文阐述了锑化物窄带隙半导体研究中心的锑化物多色红外探测器研究进展。本团队成功实现了低噪声、高量子效率以及低光学串扰的短/中、短/长、中/长、长/长、中/长/甚长波等多种高性能多色红外探测器研制。     

无位错Te-GaSb(100)单晶抛光衬底的晶格完整性

采用液封直拉(LEC)法批量生长的直径2英寸(1英寸=2.54 cm)n型Te-GaSb(100)单晶的位错腐蚀坑密度(EPD)通常低于300 cm^-2,达到无位错水平。本文利用X射线摇摆曲线以及倒易空间图(RSM)对这种GaSb单晶抛光衬底的晶格完整性和亚表面损伤情况进行了分析表征,结果表明经过工艺条件优化的化学机械抛光处理,GaSb单晶衬底表面达到原子级光滑,不存在亚表面损伤层。利用分子束外延在这种衬底上可稳定生长出高质量的Ⅱ类超晶格外延材料并呈现出优异的红外探测性能。在此基础上,对CaSb衬底材料的物性、生长制备和衬底加工条件之间的内在关系进行了综合分析。     

基于AlInGaAsP材料的应变平衡量子阱太阳能电池

近年来,基于晶格匹配的多结太阳能电池光电转换效率已经接近30;[1,2],中国电子科技集团公司第十八研究所三结GaInP/GaAs/Ge电池技术已经达到小批量生产水平.为了进一步提高多结太阳电池的转换效率,可以采用增加pn结的数量和优化三结电池子电池带宽组合等办法,但上述途径受到材料晶格匹配的限制,目前同时实现晶格匹配和最佳带宽的材料生长还存在一些问题.为此,我们采用与多结电池技术兼容的设备和材料,开展了基于AlInGaAsP材料的应变平衡量子阱太阳能电池的研究.本文给出GaAs单结量子阱电池的实验过程及结果,证实了量子阱结构的引入确实能够提高电池的输出电流.随着研究的深入,我们希望用此结构作为中间电池,以提高三结电池的效率.     

热壁外延制备InAs/Si(211)薄膜及其电学性能研究

采用热壁外延(Hot Wall Epitaxy,HWE)沉积系统在单晶Si(211)衬底表面制备了InAs薄膜,研究了不同生长温度(300℃、350℃、400℃、450℃和500℃)对薄膜材料结构及其电学性能的影响.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、霍尔(Hall)测试等,对InAs/Si(211)薄膜的晶体结构、表面形貌及电学参数进行了测试分析.结果表明:采用HWE技术在Si(211)衬底表面成功制备了InAs薄膜,薄膜具有闪锌矿结构并沿(111)方向择优生长.随着生长温度从300℃升高到500℃,全峰半高宽(FWHM)先减小后增大,生长温度为400℃时薄膜的晶粒尺寸最大为73.4 nm,载流子浓度达到1022 cm-3,霍尔迁移率数值约为102 cm2/(V·s),说明优化生长温度能够降低InAs薄膜的缺陷复合,使薄膜结晶质量和电学性能得到提高.SEM及AFM的测试结果显示由于较高的晶格失配及Si衬底斜切面(211)的特殊取向,在Si(211)衬底上生长的InAs薄膜主要为三维层加岛状(S-K)生长模式,表面粗糙度(Ra)随温度的升高先减小后增大,400℃时薄膜的平均表面粗糙度Ra为48.37 nm.     

衬底温度对共蒸发制备GaSb多晶薄膜性质的影响

采用共蒸发的方法在玻璃衬底上制备出GaSb多晶薄膜材料.研究了薄膜生长速率与衬底温度、Ga源温度和Sb源温度的关系.通过XRD、UV-Vis、Hall效应和AFM等测试方法,研究了衬底温度对于GaSb薄膜的结构特性、光电性质以及表面形貌的影响.GaSb多晶薄膜具有(111)择优取向,薄膜的吸收系数达到105 cm-1,晶粒尺寸随衬底温度升高逐渐增大;衬底温度为540℃时,薄膜的迁移率达到127 cm2/V·s,空穴浓度为3×1017 cm-3.GaSb薄膜的表面粗糙度随温度增加而增加.     

近红外宽带全方向反射镜的设计

研究了一维光子晶体的全方向反射镜.用传输矩阵法分析了影响全反镜全方向反射带带宽和位置的因素.利用带隙展宽理论,构建异质结构光子晶体,设计得到了近红外宽带全反射镜.比较发现,Te/SiO2构成的一维异质结构全向带反射特性优于TiO2/SiO2构成的一维异质结构,该反射镜TE偏振波的全方向反射带分布在近红外波段1 001 ～ 2999 nm范围内,TM偏振波的全向反射带分布在1001 ～2323 nm波段范围内,获得的反射率高于98;,而薄膜层数只需要20层.     

单分子膜诱导下晶体生长中的晶格匹配

有机基质与无机晶体的晶格几何匹配是导致生物体内矿物有序生长并具有特殊理化性质的重要因素之一.作为模拟生物矿化的重要模板之一,Langmuir单分子膜具有独特的优势.本文综述了单分子膜诱导下CuSO4、Na2SO4、PbS、CdS、BaF2和CaF2等晶体生长过程中的晶格匹配,讨论了单分子膜亲水头基、膜的电荷性质、膜聚集态等因素对膜控晶体生长过程中晶格匹配的影响.指出了该领域所面临的问题和将来的发展方向.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

First-principles coexistence simulations of supercooled liquid silicon

We perform first-principles coexistence simulations of the low-density and the high-density phases of supercooled liquid silicon and find a negative slope for the coexisting line in the temperature-pressure plane. Electron density maps and electron-localization function plots of the two phases of silicon show marked differences. The calculated differences suggest more localized electrons in the low-density liquid compared to the high-density liquid, coming from an increased population of covalent bonds, which further explain the calculated negative slope in the two phase coexistence regime. This is consistent with the presence of a pseudo-gap in low-density liquid silicon, absent in the high-density liquid which shows a metallic behavior.     

Crystal structures of thecis andtrans isomers of dithiahexahydro[3.3]metacyclophane

Structures of both thecis andtrans isomers of dithiahexahydro[3.3]metacyclophane, ?C₆H₄?CH₂SCH₂?C₆H₁₀?CH₂SCH₂?, have been determined, wherecis andtrans refer to the attachments to the cyclohexane ring. Thecis form crystallizes in the monoclinic space groupP2₁/c witha=8.4299(11)Å,b=21.772(2)Å,c=8.9724(13)Å, β=116.574(11)^o, andZ=4. Thetrans isomer packs into the monoclinic space groupP2₁ witha=8.159(16)Å,b=10.185(5)Å,c=9.558(2)Å, β=112.435(18)^o, andZ=2. The cyclohexane ring of thecis isomer is in the chair conformation, while the cyclohexane of thetrans isomer is found in a twisted boat conformation.     

CTAB与SDBS对碳酸锶粒子生长形态调控及机理研究

以表面活性剂CTAB和SDBS为化学添加剂,采用化学共沉淀法对碳酸锶晶体的生长形态进行调控,成功地制备出了实心的树枝状和花瓣为空心的花状碳酸锶粉体,并用X射线衍射(XRD)、扫描电子显微镜(SEM)和傅里叶变换红外光谱(FT-IR)等分析手段对样品进行了表征;最后重点对化学添加剂可能产生的影响机理进行了初步的探讨.结果表明,CTAB和SDBS在晶体生长的过程中能起到显著的影响作用,两者对粒子分散性能的作用效果相反,而且后者对晶体(013)和(213)晶面表面能降低的贡献明显大于前者.     

Triethyl ammonium salt of O,O′-bis(p-tolyl)dithiophosphate, [Et3NH]+[(4-MeC6H4O)2PS2]−

Triethyl ammonium Salt of O,O′-bis(p-tolyl)dithiophosphate and O,O′-bis(m-tolyl)dithiophosphate have been obtained by reaction of p- and m-cresol, respectively with P₂S₅ in toluene and have been characterized by elemental analysis, IR, ¹H and ³¹P NMR spectroscopy. The molecular structure of O,O′-bis(p-tolyl)dithiophosphate has been determined. Crystal data: [Et₃NH]⁺[(4-MeC₆H₄O)₂PS₂]⁻: Monoclinic, P2₁/c, a=15.2441(9) ?, b=10.415(2) ?, c=3.9726(9) ?, β=91.709(7)°, V=2217.5(1) ?⁻³, Z=4.Supplementary materials Additional material available from the Cambridge Crystallographic Data Centre (CCDC no. 600927 for [Et₃NH]⁺[(4-MeC₆H₄O)₂PS₂]⁻ comprises the final atomic coordinates for all atoms, thermal parameters, and a complete listing of bond distances and angles. Copies of this information may be obtained free of charge on application to The Director, 12 Union Road, Cambridge CB2 2EZ, UK (fax: +44-1223-336033; email: deposit@ccdc.cam.ac.uk or www:http://www.ccdc.cam.ac.uk).     

Crystal structure of Zn4Na(OH)6SO4Cl·6H2O

The structure of Zn₄Na(OH)₆SO₄Cl·6H₂O, a secondary mineral from Hettstedt, Germany, was determined by single-crystal X-ray diffraction. The crystals are hexagonal,a=8.413(8),c=13.095(24) Å, space group $P\bar 3$ , Z=2. The structure was refined to R=0.0554 and R_w=0.0903 for 970 reflections with I≥3σ(I). The structure can be described as zinc hydroxide layers perpendicular toc, from which sulfates and chlorides extend. The layers are held together by a system of hydrogen bonds involving hexaaquo Na⁺ ions which occupy the interlayer space.     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.