高纯硅低能粒子辐照E′色心形成动力学研究

考虑固有点缺陷形成E′色心的情况,建立了E′色心形成的动力学模型,得到了高纯硅低能粒子辐照E′色心浓度与辐照剂量的关系式.结果表明,在低辐照剂量下,E′色心浓度随剂量的变化呈线性增长;随着辐照剂量的增加,E′色心浓度随剂量的变化呈饱和趋势.如果进一步考虑E′色心和其他物质反应形成新的稳定结构,E′色心浓度随剂量的变化呈双指数关系,E′色心浓度随剂量的变化不再趋于饱和状态,而是偏离饱和状态.理论结果和实验结果很好地符合,说明建立的模型是有效的.     

高能粒子辐照二氧化硅玻璃E''色心形成机理研究

考虑高能粒子辐照二氧化硅玻璃形成E'色心的情况.建立了E'色心形成的动力学模型,得到了E'色心浓度与辐照剂量的关系式.结果表明,在高能粒子辐照情况下,E'色心的形成包括两个过程,即色心的创造过程和色心的激活过程.色心的创造过程主要由二氧化硅网格中疲劳键的断裂形成或网格中氧移位形成,E'色心浓度随剂量的变化呈线性增长.色心的激活过程主要由二氧化硅玻璃中固有点缺陷形成,E'色心浓度随剂量的变化呈饱和趋势.理论结果和实验结果符合很好,说明建立的模型是有效的.     

高能粒子辐照二氧化硅玻璃E′色心形成机理研究

考虑高能粒子辐照二氧化硅玻璃形成E′色心的情况,建立了E′色心形成的动力学模型,得到了E′色心浓度与辐照剂量的关系式. 结果表明,在高能粒子辐照情况下,E′色心的形成包括两个过程,即色心的创造过程和色心的激活过程. 色心的创造过程主要由二氧化硅网格中疲劳键的断裂形成或网格中氧移位形成,E′色心浓度随剂量的变化呈线性增长.色心的激活过程主要由二氧化硅玻璃中固有点缺陷形成,E′色心浓度随剂量的变化呈饱和趋势.理论结果和实验结果符合很好,说明建立的模型是有效的. 关键词： 二氧化硅玻璃 E′色心 辐照剂量 动力学模型     

光电容法研究电子辐照GaP中的深能级

本文提出含多个深能级响应的光电容瞬态分析方法:在不考虑各能级之间电子、空穴跃迁的条件下,可出“多指数过程分离法”,将总的瞬态过程分离为各能级上指数型瞬态过程之和.运用这一方法,对lMeV(4×1015cm-2电子辐照GaP LED进行了定态和两种注入条件的瞬态光电容测量,观察到H1、H2、H3三个空穴能级(0.51、0.75、1.15eV)和E1、E2、E3、E4四个电予能级(0.68、0.84、0.89、1.01eV),并得到各能级的光离化截面谱.外量子效率及发射谱测量结果表明;电子辐照引入的深能级(H1-H3,E1-E4)表现出无辐射复合中心的性质.     

波段外激光辐照光导型InSb探测器的一种新现象

利用不同功率密度的10.6 μm(光子能量为0.12 eV)连续激光辐照了禁带宽度为0.228 eV的光导型锑化铟探测器, 得到了与以往报道不同的实验现象. 当10.6 μm波段外激光辐照光导型探测器时, 探测器吸收激光能量后温度升高. 在探测器的温升过程中, 存在一个转变温度T₀. 当探测器的温度T<T₀时, 载流子浓度基本不变, 迁移率随温度的升高呈T^-2.35趋势下降, 引起探测器的电导率减小, 电阻增大, 响应输出电压升高; 当T>T₀时, 热激发载流子浓度随温度的升高呈指数增长, 电阻急剧下降, 超过了载流子迁移率降低对电阻的影响, 响应输出急剧下降. 光电导探测器在较高功率密度波段外激光辐照下的响应特性是载流子的浓度和迁移率在温度影响下相互作用的结果. 这对进一步完善半导体内载流子输运模型提供了实验依据.     

态|Ψ(3)〉q中广义电场分量的不等幂次Nj次方Y压缩

利用多模压缩态理论,研究了由多模复共轭虚相干态|{iZ_j^*}〉q、多模复共轭虚相干态的相反态|{-iZ_j^*}〉q和多模复共轭相干态|{Z_j^*}〉q的线性叠加所组成的新型三态叠加多模叠加态光场|Ψ⁽³⁾〉_q中广义电场分量的偶数次不等幂次Nj次方Y压缩特性.结果发现:在各模的压缩次数N_j=2pj且pj=2m′j+1(m′j=0,1,2,3,…,…)和Nj′=2pj′且pj′=2m′j′+1(m′j′=0,1,2,3,…,…)的条件下,当各模的初始相位φ_j与φ_j′、态间的初始相位差(θ₁-θ₃)与(θ₂-θ₃),以及各单模相干态光场总的平均光子数之和qj=1R2j等分别满足一定的取值条件时,态|Ψ⁽³⁾〉_q的广义电场分量(即第二正交相位分量)总可呈现出周期性变化的、偶数次的广义非线性不等幂次N_j次方Y压缩效应.     

应变Ge/Si1-xGex 价带色散模型

基于k·p微扰理论, 通过引入应变哈密顿量作为微扰, 建立了双轴应变Ge/Si_1-xGe_x价带色散关系模型. 模型适于任意晶向弛豫Si_1-xGe_x虚衬底上的应变Ge价带结构, 通过该模型可获得任意k方向应变Ge的价带结构和空穴有效质量. 模型的Matlab模拟结果显示, 应变Ge/Si_1-xGe_x价带带边空穴有效质量随Ge组分的增加而减小, 其各向异性比弛豫Ge更加显著. 本文研究成果对Si基应变Ge MOS器件及集成电路的沟道应力与晶向的设计有参考价值.     

超强激光超热电子激发的Kα X射线发射研究

建立了无色散型X射线谱仪. 利用SILEX-I激光装置的超强激光辐照固体物质，分别在靶前、后定量测量了Cu和Mo物质在不同激光功率密度时的X射线谱和Kα光子产额，推导了不同激光强度时的Kα X射线光子转换效率. 实验发现，打靶激光能量越高，靶后出射的Kα产额越高，100μm Mo靶可获得10^-5量级转换效率.     

氮化硅α，β和γ相的解析状态方程和热物理性质

对固体通用状态方程考虑热效应的Einstein模型进行修正，提出一种利用参考温度下的实验数据计算绝对零度下物质参数的方法，并用于Baonza方程以考虑热效应.结果表明，对于Baonza方程，零温下的参数可以解析地求解出来，常用的热物理量也可以推出解析表达式.将得出的公式用于研究氮化硅α，β和γ相的热物理性质.通过对文献的分析确定了这三种相的方程参数，计算的体积随压强变化和热膨胀系数随温度变化的结果与实验数据符合很好.     

深能级对GaAs1-xPxLED老化过程的影响

用深能级瞬态谱(DLTS)研究了GaAs1-xPx LED在正向电压,I=100mA(J=250A/cm2)大电流下老化750小时左右的过程中深能级浓度、深度、俘获截面的变化。GaAs1-xPx LED中存在三个电子能级:△En1=(0.19±0.01)eV;△En2=(0.20±0.01)eV;△En3=(0.40±0.01)eV。发现老化之后△En1与△En2的能级密度变小,而△En3的能级宽度却有所增大。同时测量了它们的发光光谱、光通,C-V特性和I-V特性。讨论了深能级在GaAs1-xPx LED老化过程中对发光效率与退化特性的影响。认为△En1与△En2对GaAs1-xPx LED的发光效率与退化特性无影响,而△En3是限制GaAs1-xPx LED发光效率和退化特性的有效复合中心。     

Method of Hoogenstraaten as a tool for obtaining the trap parameters of general-order thermoluminescence glow peaks

The Hoogenstraaten method is a technique that uses various heating rates for obtaining the activation energy E (eV) in the case of first-order thermoluminescence glow peaks. This method can also be used for obtaining E (eV) for all types of glow peaks regardless of their kinetics order (b). The present work shows that the intercept of the Hoogenstraaten relation, which is usually used for obtaining the frequency factor S (s ^?1) of the first-order glow peak, can be used as a very good approximation to obtain the pre-exponential factor S ^{′ ′} (s ^?1) in the case of general-order glow peaks, when one uses Hoogenstraaten’s method to obtain E (eV). In addition, the present work suggests a numerical method for obtaining the kinetics order of the general-order glow peak. The method depends on the activation energy E (eV) obtained by the Hoogenstraaten method and the above-mentioned approximation for obtaining the pre-exponential factor S ^{′ ′} (s ^?1). An independent evaluation of the suggested methods for obtaining the trap parameters, the activation energy E (eV), the pre-exponential factor S ^{′ ′} (s ^?1) and the kinetics order (b) is illustrated here by taking a numerically computed glow peak and applying a one-trap and one-recombination-center model.     

三角对称下3d3离子2E态g因子性质研究

采用完全对角化方法,以尖晶石结构的ZnAl₂Ｏ₄:Cr^3＋,ZnGa₂Ｏ₄:Cr^3＋和MgAl₂Ｏ₄:Cr^3＋系列晶体为例,联系晶格局域结构,对三角对称下3d³离子²E态g因子性质进行了研究.研究中考虑了包括自旋与自旋相互作用、自旋与另一轨 关键词： 2E态g因子')" href="#">²E态g因子 3离子')" href="#">3d³离子 尖晶石结构 磁相互作用     

Residual‐density mapping and site‐selective determination of anomalous scattering factors to examine the origin of the Fe K pre‐edge peak of magnetite

The electron‐density distribution and the contribution to anomalous scattering factors for Fe ions in magnetite have been analyzed by X‐ray resonant scattering at the pre‐edge of Fe K absorption. Synchrotron X‐ray experiments were carried out using a conventional four‐circle diffractometer in the right‐handed circular polarization. Difference‐Fourier synthesis was applied with a difference in structure factors measured on and off the pre‐edge (E_on = 7.1082 keV, E_off = 7.1051 keV). Electron‐density peaks due to X‐ray resonant scattering were clearly observed for both A and B sites. The real part of the anomalous scattering factor f′ has been determined site‐independently, based on the crystal‐structure refinements, to minimize the squared residuals at the Fe K pre‐edge. The f′ values obtained at E_on and E_off are ?7.063 and ?6.682 for the A site and ?6.971 and ?6.709 for the B site, which are significantly smaller than the values of ?6.206 and ?5.844, respectively, estimated from the Kramers–Kronig transform. The f′ values at E_on are reasonably smaller than those at E_off. Our results using a symmetry‐based consideration suggest that the origin of the pre‐edge peak is Fe ions occupying both A and B sites, where p–d mixing is needed with hybridized electrons of Fe in both sites overlapping the neighbouring O atoms.     

Fluorescence Quenching Studies of 1,3‐Diphenyl Benzene

Fluorescence quenching of 1,3‐diphenyl benzene (m‐terphenyl) by carbon tetrachloride (CCl₄) at steady state in different solvents, namely n‐hexane, n‐heptane, cyclohexane, toluene, benzene acetonitrile, 1,4‐dioxane, and with a transient method in benzene has been done at room temperature to understand the role of quenching mechanisms. The Stern–Volmer plot was found to be linear for all the solvents studied. The probability of quenching per encounter p was determined in all the solvents and was found to be less than unity. Further, from the studies of rate parameters and lifetime measurements in benzene at different temperatures (30–60°C), it was shown that the phenomenon of quenching is generally governed by the well‐known Stern–Volmer (S‐V) plot. The activation energy E _a (E′_a) of quenching was determined using literature values of activation energy of diffusion E _d, and it was found to be greater than E _d, which confirms the fact that the quenching mechanism is not solely due to material diffusion but there is also contribution from activation energy.     

Albedo factors of 279, 320, 511 and 662 keV backscattered gamma photons

The backscattered peak and albedos are important for the estimation of exposure distribution and for better understanding the phenomenon of the backscattering of gamma photons. To characterize the backscattering probability of gamma photons interacting with different atomic numbers (Z), number (A _N), energy (A _E) and dose (A _D) albedos are experimentally evaluated. The response function converts the observed pulse-height distribution of a NaI(Tl) scintillation detector to a true photon spectrum. For each of the incident gamma photon energies, the number and energy albedos show an increase with the increasing target thickness, and finally saturate. The energy albedos are found to be decreasing with the increase in the atomic number of the target material and incident gamma photon energy. The dose albedos do not differ significantly from the energy albedos for the chosen incident gamma photon energies.     

Almost mobility edges and the existence of critical regions in one-dimensional quasiperiodic lattices

We study a one-dimensional quasiperiodic system described by the Aubry–André model in the small wave vector limit and demonstrate the existence of almost mobility edges and critical regions in the system. It is well known that the eigenstates of the Aubry–André model are either extended or localized depending on the strength of incommensurate potential V being less or bigger than a critical value V _c , and thus no mobility edge exists. However, it was shown in a recent work that for the system with V < V _c and the wave vector α of the incommensurate potential is small, there exist almost mobility edges at the energy E _c±, which separate the robustly delocalized states from “almost localized” states. We find that, besides E _c±, there exist additionally another energy edges E _c′±, at which abrupt change of inverse participation ratio (IPR) occurs. By using the IPR and carrying out multifractal analyses, we identify the existence of critical regions among |E _c±|?≤?|E|?≤?|E _c′±| with the mobility edges E _c± and E _c′± separating the critical region from the extended and localized regions, respectively. We also study the system with V > V _c , for which all eigenstates are localized states, but can be divided into extended, critical and localized states in their dual space by utilizing the self-duality property of the Aubry–André model.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

Photoelectron spectroscopy of E′ centers in crystalline and glassy silicon dioxide

Radiation-induced E′ centers in SiO₂ were studied to test the possibility of applying optically stimulated electron emission (OSEE) to the spectroscopy of excited states of point defects in dielectrics. The spectral responses of the OSEE of crystalline α quartz and silica glass irradiated by 10-MeV electrons were measured and studied. It was established that volume E′ centers in the crystalline and glassy SiO₂ modifications are dominant emission-active defects. Surface E’_s (1) centers were also detected in glassy SiO₂. A model of the energy structure of E′ centers accounting for the absence of luminescence and taking into account the presence of two nonradiative (intracenter and ionization) relaxation channels is proposed. This model was used to explain the mechanism of photothermal decay of the E′ centers and to determine the ionization activation barriers and quantum yields of these centers. The emission, spectral, and kinetic parameters of the volume and surface E′ centers in glassy SiO₂ were obtained, showing the excited states of these defects to have identical atomic configurations.     

On the relation of Regge-trajectories to degenerate classical solutions of equations of motion

The relation of orbital excitations E = E(l) to critical curves in the initial data (l, E)-plane of classical equations of motions is pointed out. In addition it is shown that the string motion with the linear trajectory J=α′m² corresponds to a degenerate solution of the inhomogeneous Maxwell equations.