Modulation bandwidth and noise limit of photoconductive gates

The modulation bandwidth and noise limit of a photoconductive sampling gate are studied by reducing the parasitic capacitance and leakage current of the sampling circuit using an integrated junction field-effect transistor (JFET) source follower. The modulation bandwidth of the photoconductive sampling gate is limited by the external parasitic capacitance, and its efficiency is found to saturate at a laser gating power of about 1 mW. It is determined that the noise of the photoconductive sampling gate is dominated by the photovoltaic current due to the gating laser amplitude fluctuation. A minimum noise level of 4 nV Hz^–1/2 has been measured, and an enhancement in signal-to-noise ratio by a factor of >45 has been achieved after the integration of the source follower with the photoconductive sampling gate. The JFET source follower serves to increase the modulation bandwidth of the photoconductive sampling gate by about 15 times and buffer the charge of the measured signal using its extremely high gate input impedance. The performance of the photoconductive sampling gate in regard to invasiveness and gating efficiency has been optimized, while a picosecond temporal resolution has been maintained and the signal-to-noise performance has been enhanced using a gating laser power as low as 10 W.     

Electric gating of the multichannel conduction in LaAlO_3/SrTiO_3 superlattices

The electric gating on the transport properties of two-dimensional electron gas(2DEG) at the interface of LaAlO₃/SrTiO₃(LAO/STO) heterostructure has attracted great research interest due to its potential application in fieldeffect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO superlattices(SLs)fabricated on the TiO₂-terminated(001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2 DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure.     

Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures

The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov–de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements.     

Modulation of noise in submicron GaAs/AlGaAs hall devices by gating

We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 to 60 K. A large variety of noise spectra, from 1/f to Lorentzian, are obtained by gating the Hall devices. The noise level can be reduced by up to several orders of magnitude with a moderate gate voltage of 0.2 V, whereas the carrier density increases less than 60% in the same range. The significant dependence of the Hall noise spectra on temperature and gate voltage is explained in terms of the switching processes related to impurities in n-AlGaAs.     

激光距离选通成像门宽对图像信噪比影响

为了解不同激光测距精度下的选通成像信噪比,本文利用外场实验系统对不同门宽条件下的图像信噪比进行了分析。首先,根据激光距离选通成像理论建立作用距离模型,初步确定系统各项参数。在此基础上,构建外场实验系统,并利用实验系统进行外场实验研究。对不同门宽条件下的图像进行分析对比,获得门宽与图像信噪比关系曲线。实验结果表明:在门宽2 μs范围内,图像信噪比≥8,图像质量满足自动识别要求,充分证明了距离选通成像系统对测距精度要求较低,完全满足实际应用需求。     

Gate‐controlled metal–insulator transition in the LaAlO3/SrTiO3 system with sub‐critical LaAlO3 thickness

We studied the electrical conduction in the LaAlO₃/SrTiO₃ (LAO/STO) interface electron system with a sub‐critical LAO layer thickness of ～3.5 unit cells (uc). It was found that the true dividing point between metallic and insulating behaviour without gating lies near the LAO thickness of 3.5 uc. Our marginally metallic 3.5 uc sample showed a sharp transition to insulating state at temperatures which strongly depended on the applied negative back‐gate voltage. The superior gate‐controllability of the sample was attributed to its sheet carrier density which was an order of magnitude lower than those of conducting LAO/STO samples with 4 uc or more of LAO layers. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spectroscopic study of self and buffer gas broadened CO2 overtone transitions at 780 nm by NIR diode laser spectrometer

We propose a scheme to achieve quantum gate operations within decoherence-free subspace (DFS) using nitrogen-vacancy centers in separate diamond nanocrystals coupled to a whispering-gallery mode resonator. By virtue of Raman transitions in the dispersive regime, we present two different methods for realizing quantum gating within DFS in a deterministic way. The quantum gating is seriously treated by considering all kinds of decoherence mechanisms, and the experimental feasibility is achieved using currently available technology.     

Creating unconventional geometric phase gate using squeeze-like operator assisted by strong driving field

Based on the idea that a squeezing process can be thought of as a total cumulative effect of a large number of tiny squeezing processes, we define a squeeze-like operator with a time-dependent squeeze parameter. Applying this operator to and combining with a system which includes a two-photon interaction between two atoms and an initial vacuum cavity field, and resorting to a resonant strong driving classical field, we obtain an unconventional geometric phase gate with a shorter gating time.     

Kramers-type elastic ratchet model for ATP gating during kinesin’s mechanochemical cycle

ATP binding, acting as a gate, plays an important role in kinesin stepping. To understand the physical mechanism of the ATP gate, we propose a Kramers-type elastic ratchet model in which the free head undergoes a biased diffusive search. By first passage time analysis, we investigate the dependence of the mean dwell time on the load force for forward steps of kinesin and find that the forward dwell time varies exponentially with the backward load force which is consistent with the data of Carter and Cross, Nature 435 (2005) 308. Our work suggests that the gating mechanism triggered by ATP binding involves both Kramers-type elastic ratchet mechanism and power stroke movement.     

Reconstruction as a source of artifact in non-gated single-shot diffusion-weighted EPI

A controversy has existed over the requirement to cardiac gate diffusion-weighted MRI acquisitions of the brain. Conventional wisdom suggests gating to be a necessary requirement to allow acquisition of accurate data, but recent applications find gating not necessary. The signal-to-noise and acquisition duration of these two approaches can be quite different; thus, this difference in methodology is important. This is particularly relevant when performing quantitative work such as diffusion tensor imaging. Here, the convention to gate is explained as being due to the historical use of low spatial resolution and more recently to the use of different reconstruction approaches. It is demonstrated that the Margosian reconstruction approach only yields high quality results when used in a gated fashion. Zero padding of the acquisition matrix provides an alternative reconstruction method that is not found to accentuate the artifacts that are due to pulsatile motion in the diffusion-weighted acquisition and thus do not require a gated acquisition. The relative merits of each reconstruction approach are discussed, including estimates of the relative signal-to-noise ratio and resolution benefits. It is concluded that both gated methods and non-gated methods can each provide high quality results with appropriate reconstruction methods.     

Scheme for Implementing an N-Qubit Phase Gate via Selective Atom--Field Interaction with Cavity Quantum Electrodynamics

A scheme for implementing a two-qubit phase gate with atoms sent through a high-Q optical cavity is proposed by choosing nonidentical coupling constants between the atoms and cavity. The atomic spontaneous emission can be suppressed due to the large atom-field detuning. Moreover, the scheme can be generalized to implement an N-qubit phase gate and the gating time does not change with an increase of the number of qubits.     

Optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostructure

We report on measurements of optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostructure with a high mobility 2-dimensional electron gas (2DEG) in a thin (55 nm) GaAs layer. The optically induced gate voltage between the front gate and the 2DEG is sensitive to excess electron concentrations below 10⁷ cm⁻². In the gate voltage spectrum we observe a peak below the bandgap energy of GaAs, which is not observed in the photocurrent, luminescence or excitation spectra. Due to the extremely high sensitivity of this technique we attribute this below bandgap signal to very weak absorption lines below the GaAs bandgap energy by impurity bands or defect absorption. The fall-off of the below bandgap signal varies as exp (hω/E₀), where E₀ is an indicative for the quality of the heterostructure.     

Robust Conditional <Emphasis Type="Italic">z</Emphasis> Gate Operation in the Decoherence-Free Subspace of Superconducting Quantum-Interference Devices

A scheme for implementing a conditional z gate in the decoherence-free subspace of superconducting quantum-interference devices (SQUIDs) is presented based on the dispersive interaction. Each logic qubit is encoded in the ground states of two rf SQUIDs, which own lower energy and can be relatively stable in operation. By switching on/off the classical pulses and selecting the gating time appropriately, a high fidelity is obtained. Moreover, this scheme can be generalized to the multi-qubit case without changing the gating time.     

一种新型选通象增强高速电影系统

为了实现对“弱、小、多、快”目标的跟踪测量,我们研制了一种选通象增强高速电影摄影系统。它是集激光象增强技术、激光照明技术、电子选通技术及高速电影摄影技术于一体的新型系统,它具有光增益高,成象质量好,可探测距离远等特点。 该系统采用了带选通的二代象增强器;采用了电子快门,其曝光时间在1μs—300μs可调,频率在1—100帧/秒可调;采用了非透镜耦合的方式,解决了胶片与耦合面板之间的静电放电问题,以及高速运转时它们之间的磨擦问题,采用了小数值孔径耦合面板,改善了耦合分辨率,采用了高性能的间歇输片机构,实现了胶片的高速间歇运动。 本文还介绍了该系统的静态和动态测试结果,以及在激光照明下的测试结果。     

Unconventional Geometric Quantum Computation in?a?Dissipative Cavity QED System Without the Heating

We improve the scheme of geometric quantum phase gate (Chen et al. in Phys. Rev. A 74:032328, 2006) by using double-Hamiltonian evolution technique to remove the photon fluctuation in the cavity mode during the gating. We also shows that when the classical laser intensity is fixed, our gating time may be shorter than that in the ideal case due to the introduction of the cavity mode decay, although the dissipation decreases the corresponding fidelity and the success probability of the gate.     

One-Step Implementation of Mulitqubit Quantum Phase Gate in a Cavity QED System

An alternative protocol is proposed to implement three-qubit phase gate between photon and atoms in a high-Q bimodel optical cavity. The idea can be extended to directly implement N-qubit phase gate, and the gating time that is required to implement the protocol does not rise with increasing number of qubits. The influence of cavity decay and atomic spontaneous emission on the gate fidelity is also discussed.     

fficient Scheme for Implementing a Fredkin Gate via Resonant Interaction with Two-Mode Cavity Quantum Electrodynamics

A scheme for implementing a Fredkin gate with an atom sent through a microwave cavity is proposed. The scheme is based on the resonant atom-cavity interaction so that the gating time is sharply short, which is important in view of decoherence.     

高电子迁移率晶体管微波损伤仿真与实验研究

针对AlGaAs/InGaAs型高电子迁移率晶体管,利用TCAD半导体仿真工具,从器件内部空间电荷密度、电场强度、电流密度和温度分布变化分析出发,研究了从栅极注入1 GHz微波信号时器件内部的损伤过程与机理。研究表明,器件的损伤过程发生在微波信号的正半周,负半周器件处于截止状态;器件内部损伤过程与机理在不同幅值的注入微波信号下是不同的。当注入微波信号幅值较低时,器件内部峰值温度出现在栅极下方靠源极侧栅极与InGaAs沟道间,由于升温时间占整个周期的比例太小,峰值温度很难达到GaAs的熔点;但器件内部雪崩击穿产生的栅极电流比小信号下栅极泄漏电流高4个量级,栅极条在如此大的电流下很容易烧毁熔断。当注入微波信号幅值较高时,在信号正半周的下降阶段,在栅极中间偏漏极下方发生二次击穿,栅极电流出现双峰现象,器件内部峰值温度转移到栅极中间偏漏极下方,峰值温度超过GaAs熔点。利用扫描电子显微镜对微波损伤的高电子迁移率晶体管器件进行表面形貌失效分析,仿真和实验结果符合较好。     

Blind frequency-resolved optical-gating pulse characterization for quantitative differential multiphoton microscopy

We use a unique multifocal multiphoton microscope to directly characterize the pulse in the focal plane of a high-NA objective using second-harmonic generation frequency-resolved optical gating (FROG). Because of the nature of the optical setup, femtosecond laser pulses of orthogonal polarization states are generated in the focal plane, each acquiring a different spectral dispersion. By applying an additional constraint on the phase extraction algorithm, we simultaneously extract both the gate and probe pulses from a single spectrogram with a FROG error of 0.016.     

Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT) is compared with that of conventional high electron mobility transistor(HEMT) under direct current(DC) stress,and the degradation mechanism is studied. Under the channel hot electron injection stress, the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer, and that under the gate dielectric of the device. The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress, which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel. However, because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel, the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT. The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.